CN209561856U - Laser Q-switching module, circuit - Google Patents
Laser Q-switching module, circuit Download PDFInfo
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- CN209561856U CN209561856U CN201920165147.4U CN201920165147U CN209561856U CN 209561856 U CN209561856 U CN 209561856U CN 201920165147 U CN201920165147 U CN 201920165147U CN 209561856 U CN209561856 U CN 209561856U
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Abstract
This application discloses a kind of laser Q-switching module, circuit, which includes: transistor unit and inductance unit, and transistor unit includes: MOS field effect transistor；Inductance unit includes: that pulsedly triggering input and inductance retarder, triggering input are connect with the input terminal of inductance retarder；The output end of inductance retarder and the S of the control electrode of MOS field effect transistor and MOS field effect transistor are extremely in parallel.The modular structure is simple, and output voltage is continuously adjustable, and the triggering output impulsive synchronization precision of switches at different levels is high, and repetition rate is up to tens KHz.
Description
Technical field
This application involves a kind of laser Q-switching modules, circuit, are especially able to achieve the output of Gao Zhongying laser, and high voltage input belongs to
In laser technology field.
Background technique
In the prior art, by adding and subtracting voltage to electro-optic crystal both ends in laser, send out the loss of laser resonator
Raw mutation, to realize the output of high-peak power, narrow pulse width laser.Controling circuit structure used in the means is complicated, right
Electro-optic crystal applies voltage levels and is limited by component self character, can not generate realization high voltage adjusting, limit to laser
Adjusting range.
Utility model content
According to the one aspect of the application, a kind of laser Q-switching module is provided, the modular structure is simple, and output voltage connects
Continue adjustable, the triggerings of switches at different levels output impulsive synchronization precision is high, and repetition rate is up to tens KHz.
The laser Q-switching module characterized by comprising transistor unit and inductance unit, the transistor unit packet
It includes: MOS field effect transistor；
The inductance unit includes: that pulsedly triggering input and inductance retarder, the triggering input and the inductance
The input terminal of retarder connects；
The control electrode and the MOS field-effect of the output end of the inductance retarder and the MOS field effect transistor
It connects the pole S of transistor.
Optionally, the triggering input is the triggering input of action of low-voltage pulse square wave.
Optionally, the transistor unit includes first resistor and second resistance, the both ends of the first resistor respectively with
The pole S of the MOS field effect transistor is connected with the pole D；
The both ends of the second resistance are connect with the control electrode of the MOS field effect transistor, the pole S respectively.
The another aspect of the application additionally provides a kind of laser Q-switching circuit, comprising: for example above-mentioned laser Q-switching of at least one level
Module.
Optionally, comprising: high input voltage output module, the high input voltage output module and the laser Q-switching module
Adjust Q output connection.
Optionally, the laser Q-switching module includes: to adjust Q input terminal and tune Q ground terminal,
The tune Q input terminal and triggering input connection；
The tune Q ground terminal is connect with the pole S of MOS field effect transistor；
The tune Q output is connect with the pole D of MOS field effect transistor with first resistor.
Optionally, the high input voltage output module includes: high voltage direct current input end, pulse voltage output end, the tune Q
Output end inputs end with the high voltage direct current and the pulse voltage output end is connect.
Optionally, the high input voltage output module include first order laser Q-switching module, second level laser Q-switching module extremely
N-th grade of laser Q-switching module, the second level laser Q-switching module to (n-1)th grade of laser Q-switching module include first resistor end and
Second resistance end；
The first order laser Q-switching module includes the second resistance end；
N-th grade of laser Q-switching module includes the first resistor end；
The tune Q ground terminal of the first order laser Q-switching module is grounded, the tune Q input terminal of the first order laser Q-switching module
It inputs and connects with the triggering, the first order laser Q-switching module adjusts Q output and the second level laser Q-switching module
Adjust the connection of Q ground terminal, the second resistance end of the first order laser Q-switching module and the first of the second level laser Q-switching module
Resistance terminal connection；
The input terminal of the second level laser Q-switching module and triggering input connect, the second level laser Q-switching module
Tune Q output connect with the tune Q ground terminal of third level laser Q-switching module, the second resistance of the second level laser Q-switching module
End is connect with the first resistor end of the second level laser Q-switching module；
Extremely
The input terminal of n-th grade of laser Q-switching module and triggering input connect, n-th grade of laser Q-switching module
Q output is adjusted to connect with the high input voltage output module, the tune Q ground terminal of n-th grade of laser Q-switching module and (n-1)th grade
The tune Q output of laser Q-switching module connects, the second resistance end of (n-1)th grade of laser Q-switching module and n-th grade of laser
Adjust the first resistor end connection of Q module.
The beneficial effect that the application can generate includes:
1) laser Q-switching circuit provided herein, tune Q circuit is continuously adjustable with output voltage, and switching speed is fast,
The laser synchronization time jitter of output is small, and the amplitude for exporting high pressure is not limited by component can according to need any expansion
Advantage.
2) laser Q-switching circuit provided herein, this circuit realize input control by inductance retarder, thus real
Now every level-one switch mosfet controls simultaneously, avoids the latency issue between switch mosfets at different levels, to realize that height synchronizes essence
It spends and easily controllable.
3) laser Q-switching circuit provided herein, this adjusts the control process of Q circuit can be completely not by voltage levels shadow
It rings, has the advantages of simple structure and easy realization, can apply and require the high and/or demanding occasion of synchronization accuracy in voltage output.
4) amplitude of laser Q-switching circuit provided herein, maximum output voltage can be by being superimposed multi-level transistor
Unit and trigger unit realize any expansion.
Detailed description of the invention
Fig. 1 is laser Q-switching modular structure schematic diagram in a kind of embodiment of the application；
Fig. 2 is laser Q-switching electrical block diagram in a kind of embodiment of the application.
Specific embodiment
The application is described in detail below with reference to embodiment, but the application is not limited to these embodiments.
Referring to Fig. 1, laser Q-switching module provided by the present application, comprising: transistor unit and inductance unit, the transistor
Unit includes: MOS field effect transistor；
The inductance unit includes: triggering input and inductance retarder, and the triggering inputs and the inductance shielding wire
The input terminal of circle connects；The control electrode and the MOS of the output end of the inductance retarder and the MOS field effect transistor
It connects the pole S of field effect transistor.
Optionally, the triggering input is action of low-voltage pulse square wave triggering input IN.
Using using square wave is the pulse voltage in period as input, can regularly realize the control to output.
Optionally, the transistor unit includes first resistor Rn and second resistance rn, the both ends of the first resistor Rn
It is connect respectively with the pole S of the MOS field effect transistor and the pole D；It is imitated respectively with described MOS at the both ends of the second resistance rn
Answer control electrode, the connection of the pole S of transistor.
Current limliting is carried out to transistor unit by setting first resistor Rn and second resistance rn, improves circuit safety.
Referring to fig. 2, laser Q-switching circuit provided by the present application, comprising: the above-mentioned laser Q-switching module of at least one level and high pressure are defeated
Enter output module.
Optionally, comprising: high input voltage output module, the high input voltage output module and the laser Q-switching module
Adjust Q output connection.
Optionally, the laser Q-switching module includes: to adjust Q input terminal and tune Q ground terminal,
The tune Q input terminal and triggering input connection；
The tune Q ground terminal is connect with the pole S of MOS field effect transistor；
The tune Q output is connect with the pole D of MOS field effect transistor with first resistor Rn.
Specifically, the laser Q-switching module includes: to adjust Q input terminal, adjust Q ground terminal and adjust Q output,
The tune Q input terminal and triggering input connection；The tune Q ground terminal is connect with the pole S of MOS field effect transistor；
The tune Q output is connect with the pole D of MOS field effect transistor with first resistor Rn；
The high input voltage output module is connect with the tune Q output.
Specifically, the high input voltage output module includes: high voltage direct current input end HV, pulse voltage output end OUT, the
One high-voltage and current-limitation resistance R0 and the second high-voltage and current-limitation resistance Rm, the tune Q output and the first high-voltage and current-limitation resistance R0's
One end connection；The other end of the first high-voltage and current-limitation resistance R0 is connect with the second high-voltage and current-limitation resistance Rm, and described second
The other end of high-voltage and current-limitation resistance Rm is connect with high voltage direct current input end HV；The pulse voltage output end OUT with it is described
First high-voltage and current-limitation resistance R0 is connected with one end of the second high-voltage and current-limitation resistance Rm.
This laser Q-switching circuit by control as pulse input action of low-voltage pulse square wave trigger input, realization to inductance every
The control enclosed offline.
In use, the D grade of MOS field effect transistor is in high-impedance state with S grades when triggering input IN is low level,
Pulse voltage output end OUT output HIGH voltage.
When triggering input IN input be high level when, the D grade of MOS field effect transistor and S grades it is in the conductive state, at this time
MOSFET internal resistance is almost 0, and pulse voltage output end OUT is also 0.
This circuit is by the low and high level pulses switch of triggering input IN, D grades and S grades of control MOS field effect transistor
Periodical conduction and cut-off generates the high-voltage pulse signal of rapid decrease formula.Realize the control to circuit output voltage.
Wherein the first high-voltage and current-limitation resistance R0 and the second high-voltage and current-limitation resistance Rm is used for current limliting.By by multi-stage laser tune Q
Module superposition, can be effectively controlled output voltage values, controls output voltage using which, avoids device to voltage output value
Limitation.By triggering input control laser Q-switching modules at different levels, it can guarantee the precise synchronism of control, avoid the generation of delay.
Optionally, the laser Q-switching module includes first order laser Q-switching module, second level laser Q-switching module to n-th grade
Laser Q-switching module, the second level laser Q-switching module to (n-1)th grade of laser Q-switching module include first resistor end and the second electricity
Hinder end；
The first order laser Q-switching module includes the second resistance end；
N-th grade of laser Q-switching module includes the first resistor end；
The tune Q ground terminal of the first order laser Q-switching module is grounded, the tune Q input terminal of the first order laser Q-switching module
It inputs and connects with the triggering, the first order laser Q-switching module adjusts Q output and the second level laser Q-switching module
Adjust the connection of Q ground terminal, the second resistance end of the first order laser Q-switching module and the first of the second level laser Q-switching module
Resistance terminal connection；
The input terminal of the second level laser Q-switching module and triggering input connect, the second level laser Q-switching module
Tune Q output connect with the tune Q ground terminal of third level laser Q-switching module, the second resistance of the second level laser Q-switching module
End is connect with the first resistor end of the second level laser Q-switching module；
Extremely
The input terminal of n-th grade of laser Q-switching module and triggering input connect, n-th grade of laser Q-switching module
Q output is adjusted to connect with the high input voltage output module, the tune Q ground terminal of n-th grade of laser Q-switching module and (n-1)th grade
The tune Q output of laser Q-switching module connects, the second resistance end of (n-1)th grade of laser Q-switching module and n-th grade of laser
Adjust the first resistor end connection of Q module.
Connection relationship illustrated below, when using n grades of laser Q-switching modules, between each component.Referring to fig. 2, described to swash
Light tune Q circuit includes first order laser Q-switching module, second level laser Q-switching module ..., n-th grade of laser Q-switching module,
The first order laser Q-switching module include: MOS field effect transistor Q1, resistance R1, resistance r1, first triggering it is defeated
Enter the pole the S ground connection of IN and inductance retarder T1, the MOS field effect transistor Q1,
The second level laser Q-switching module include: MOS field effect transistor Q2, resistance R2, resistance r2, second triggering it is defeated
Enter IN and inductance retarder T2,
The pole D of the MOS field effect transistor Q1 connect with the resistance R1 after with the MOS field effect transistor Q2's
The pole S is connected, while also connecting with one end of resistance R2；
The first triggering input IN is connect with the inductance retarder T1 input terminal, the inductance retarder T1's
Output end is connect with the control electrode of the pole S of the MOS field effect transistor Q1 and the MOS field effect transistor Q1, the electricity
Resistance r1 connect with the output end of the inductance retarder T1, the both ends of the resistance R1 respectively with the MOS field effect transistor
The pole S of pipe Q1 is connected with the pole D；
One end of the resistance R1 is also connect with the resistance R2；
The second triggering input IN is connect with the inductance retarder T2 input terminal, the inductance retarder T2's
Output end is connect with the control electrode of the pole S of the MOS field effect transistor Q2 and the MOS field effect transistor Q2, the electricity
Resistance r2 connect with the output end of the inductance retarder T2, the both ends of the resistance R2 respectively with the MOS field effect transistor
The pole S of pipe Q2 is connected with the pole D；
One end of the resistance R2 is also connect with the resistance R3, the pole D of the MOS field effect transistor Q2 and the electricity
It is connect after resistance R2 connection with the pole S of the MOS field effect transistor Q3；……
N-th grade of laser Q-switching module includes: MOS field effect transistor Qn, resistance Rn, resistance rn, the n-th triggering input
IN and inductance retarder Tn,
The n-th triggering input IN is connect with the inductance retarder Tn input terminal, the inductance retarder Tn's
Output end is connect with the control electrode of the pole S of the MOS field effect transistor Qn and the MOS field effect transistor Qn, the electricity
Resistance rn connect with the output end of the inductance retarder Tn, the both ends of the resistance Rn respectively with the MOS field effect transistor
The pole S of pipe Qn is connected with the pole D；
One end of the resistance Rn is also connect with the resistance Rn-1, the pole D of the MOS field effect transistor Qn with it is described
It is connect after resistance Rn connection with high direct voltage input terminal, the extremely described MOS field effect transistor of the S of the MOS field effect transistor Qn
The pole D of pipe Qn-1 connects；
The pulse voltage output end is connected with the high direct voltage input terminal.
Using above-mentioned laser Q-switching circuit, input IN is triggered by control, realizes high_voltage isolation inductance coil to control
The switch of MOSFET pipe, thus the accurately circuit of control high-voltage pulse output.
In use, the laser Q-switching circuit:
The input triggering input at least one level such as above-mentioned laser Q-switching module, when triggering input is low level,
Such as pulse voltage output end output voltage in above-mentioned laser Q-switching circuit；
When triggering input is high level, the pulse voltage output end output is 0.
This circuit is to control the pole D, the S of MOSFET field effect transistor by the conversion of the low and high level of triggering input IN
The on and off of pole, to generate the high-voltage pulse signal of rapid decrease formula.
The above is only several embodiments of the application, not does any type of limitation to the application, although this Shen
Please disclosed as above with preferred embodiment, however not to limit the application, any person skilled in the art is not taking off
In the range of technical scheme, a little variation or modification are made using the technology contents of the disclosure above and is equal to
Case study on implementation is imitated, is belonged in technical proposal scope.
Claims (9)
1. a kind of laser Q-switching module characterized by comprising transistor unit and inductance unit, the transistor unit packet
It includes: MOS field effect transistor；
The inductance unit includes: that pulsedly triggering input and inductance retarder, the triggering input are isolated with the inductance
The input terminal of coil connects；
The control electrode and the MOS field effect transistor of the output end of the inductance retarder and the MOS field effect transistor
The S of pipe is extremely in parallel.
2. laser Q-switching module according to claim 1, which is characterized in that the triggering input is that action of low-voltage pulse square wave touches
Hair input.
3. laser Q-switching module according to claim 1, which is characterized in that the transistor unit include first resistor and
Second resistance, the both ends of the first resistor are connect with the pole S of the MOS field effect transistor and the pole D respectively；
The both ends of the second resistance are connect with the control electrode of the MOS field effect transistor, the pole S respectively.
4. a kind of laser Q-switching circuit characterized by comprising at least one level is according to any one of claims 1 to 3 to swash
Light tune Q module.
5. laser Q-switching circuit according to claim 4 characterized by comprising high input voltage output module, the height
Pressure input/output module is connect with the tune Q output of the laser Q-switching module.
6. laser Q-switching circuit according to claim 5, which is characterized in that the laser Q-switching module includes: to adjust Q input terminal
With adjust Q ground terminal,
The tune Q input terminal and triggering input connection；
The tune Q ground terminal is connect with the pole S of MOS field effect transistor；
The tune Q output is connect with the pole D of MOS field effect transistor with first resistor.
7. laser Q-switching circuit according to claim 5, which is characterized in that the high input voltage output module includes: high pressure
Direct-flow input end, pulse voltage output end, the tune Q output and high voltage direct current input end and the pulse voltage export
End connection.
8. laser Q-switching circuit according to claim 7, which is characterized in that the high input voltage output module includes: first
High-voltage and current-limitation resistance and the second high-voltage and current-limitation resistance, the tune Q output are connect with one end of the first high-voltage and current-limitation resistance；
The other end of the first high-voltage and current-limitation resistance is connect with the second high-voltage and current-limitation resistance, the second high pressure limit galvanic electricity
The other end of resistance is connect with high voltage direct current input end；
The pulse voltage output end is connect with one end of the first high-voltage and current-limitation resistance and the second high-voltage and current-limitation resistance.
9. laser Q-switching circuit according to claim 5, which is characterized in that the laser Q-switching module includes first order laser
Adjust Q module, second level laser Q-switching module to n-th grade of laser Q-switching module, the second level laser Q-switching module to (n-1)th grade swash
Light tune Q module includes first resistor end and second resistance end；
The first order laser Q-switching module includes the second resistance end；
N-th grade of laser Q-switching module includes the first resistor end；
The tune Q ground terminal of the first order laser Q-switching module is grounded, the tune Q input terminal of the first order laser Q-switching module and institute
Triggering input connection is stated, the tune Q output of the first order laser Q-switching module and the tune Q of the second level laser Q-switching module connect
Ground terminal connection, the first resistor end at the second resistance end of the first order laser Q-switching module and the second level laser Q-switching module
Connection；
The input terminal of the second level laser Q-switching module and triggering input connect, the tune of the second level laser Q-switching module
Q output is connect with the tune Q ground terminal of third level laser Q-switching module, the second resistance end of the second level laser Q-switching module with
The first resistor end of the second level laser Q-switching module connects；
Extremely
The input terminal of n-th grade of laser Q-switching module and triggering input connect, the tune Q of n-th grade of laser Q-switching module
Output end is connect with the high input voltage output module, the tune Q ground terminal and (n-1)th grade of laser of n-th grade of laser Q-switching module
Adjust the tune Q output connection of Q module, the second resistance end of (n-1)th grade of laser Q-switching module and n-th grade of laser Q-switching mould
The first resistor end of block connects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920165147.4U CN209561856U (en) | 2019-01-30 | 2019-01-30 | Laser Q-switching module, circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920165147.4U CN209561856U (en) | 2019-01-30 | 2019-01-30 | Laser Q-switching module, circuit |
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| CN209561856U true CN209561856U (en) | 2019-10-29 |
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ID=68310090
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638626A (en) * | 2019-01-30 | 2019-04-16 | 中国科学院福建物质结构研究所 | Laser Q-switching module, adjusts Q control method at circuit |
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2019
- 2019-01-30 CN CN201920165147.4U patent/CN209561856U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638626A (en) * | 2019-01-30 | 2019-04-16 | 中国科学院福建物质结构研究所 | Laser Q-switching module, adjusts Q control method at circuit |
| CN109638626B (en) * | 2019-01-30 | 2023-10-03 | 中国科学院福建物质结构研究所 | Laser Q-switching module, circuit and Q-switching control method |
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