CN211300301U - High-voltage composite electric pulse modulation circuit and ablation equipment - Google Patents
High-voltage composite electric pulse modulation circuit and ablation equipment Download PDFInfo
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- CN211300301U CN211300301U CN201922048495.6U CN201922048495U CN211300301U CN 211300301 U CN211300301 U CN 211300301U CN 201922048495 U CN201922048495 U CN 201922048495U CN 211300301 U CN211300301 U CN 211300301U
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Abstract
The utility model relates to the field of high-voltage electric pulse ablation equipment manufacture, the pulse generated by the existing ablation modulation circuit can not be expected, the utility model provides a high-voltage composite electric pulse modulation circuit, which comprises a direct current adjustable voltage-stabilized power supply circuit used for configuring the direct current of 2-3 kV; the high-voltage microsecond pulse modulation circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and is used for modulating microsecond pulses; the Marx discharge circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and used for modulating the high-voltage nanosecond pulse; the relay switch group comprises two groups, one group is arranged on the high-voltage microsecond pulse modulation circuit, and the other group is arranged on the Marx discharge circuit; and the control circuit is in signal connection with the relay switch group, and controls the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit to work alternately through the two groups of relay switches to generate the high-voltage composite electric pulse, so that a better treatment effect can be realized.
Description
Technical Field
The utility model relates to a high-voltage electric pulse ablation equipment makes the field, more specifically says so a high-voltage composite electric pulse modulation circuit and ablation equipment.
Background
Compared with the traditional treatment method, the treatment method does not depend on temperature for treatment, is not influenced by a heat pool effect, has clear and predictable ablation boundary, thorough ablation and short treatment time.
Currently, pulsed electric field therapy methods include irreversible electroporation therapy and high-voltage nanosecond-pulse-induced apoptosis therapy with high-voltage microsecond pulses. The amplitude of the high-voltage microsecond pulse voltage is generally not more than 3000V, and the amplitude of the high-voltage nanosecond pulse voltage is generally more than 10 kV. The high-voltage microsecond pulse causes irreversible electroporation of the cells by acting on the outer membrane of the cells, thereby causing necrosis of the cells. The high-voltage nanosecond pulse has the effect of inducing apoptosis by acting on the cell nucleus.
High-voltage microsecond pulse tumor treatment equipment is applied to clinic, and compared with high-voltage nanosecond pulse, due to the fact that a mode of directly killing cells is adopted, inflammatory reaction is more serious, and the needed treatment time is longer. The high-voltage nanosecond pulse tumor treatment equipment has the technical difficulty of maintaining stable output in a treatment vehicle due to higher voltage and shorter pulse width, and is not widely popularized.
Therefore, the existing high-voltage microsecond pulse and high-voltage nanosecond pulse modulation circuit and ablation equipment cannot better improve the treatment effect in practical application.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that overcome the defect that exists among the above-mentioned prior art, provide a high pressure composite electric pulse modulation circuit and melt equipment, can reduce technical requirement, modulate out the electric pulse that improves treatment.
In order to achieve the above object, the utility model discloses a following technical scheme can realize: a high-voltage composite electric pulse modulation circuit comprises a direct current adjustable voltage-stabilized power supply circuit, a voltage-stabilized power supply circuit and a voltage-stabilized power supply circuit, wherein the direct current adjustable voltage-stabilized power supply circuit is used for configuring direct current of 2-3 kV; the high-voltage microsecond pulse modulation circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and is used for modulating microsecond pulses; the Marx discharge circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and used for modulating the high-voltage nanosecond pulse; the relay switch group comprises two groups, one group is arranged on the high-voltage microsecond pulse modulation circuit, and the other group is arranged on the Marx discharge circuit; and the control circuit is in signal connection with the relay switch group, and controls the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit to alternately work through two groups of relay switches to generate the high-voltage composite electric pulse.
By adopting the technical scheme, the linear superposition of the high-voltage nanosecond pulse and the microsecond pulse is realized, the advantages of the high-voltage nanosecond pulse and the microsecond pulse are combined, and the ablation pulse with better treatment effect can be generated.
The utility model discloses further preferred scheme does: the high-voltage microsecond pulse modulation circuit comprises a charging capacitor C0, a resistor R1 and an IGBT driving module; the IGBT driving module is controlled by the control circuit.
The utility model discloses further preferred scheme does: the Marx discharge circuit is a circuit with a multi-stage charge-discharge structure formed by taking an IGBT as a driving module; and the IGBT driving module in each stage of charging and discharging structure is controlled by the control circuit.
The utility model discloses further preferred scheme does: the control circuit comprises a single chip microcomputer and an FPGA chip, and the single chip microcomputer is electrically connected with the IGBT driving module through the FPGA chip.
The utility model discloses further preferred scheme does: in the high-voltage microsecond pulse modulation circuit, one end of a charging capacitor C0 is coupled to direct current, and the other end is used for releasing microsecond pulses to an electrode; the IGBT driving module adopts an N-type IGBT0, a collector electrode of the IGBT driving module is coupled to one end of the charging capacitor, a grid electrode of the IGBT driving module is connected with the FPGA chip, and an emitter electrode of the IGBT driving module is grounded; the resistor R1 is coupled to one end of the charging capacitor; a relay switch K1 is arranged between the charging point capacitor C0 and direct current, a relay switch K2 is arranged between the charging point capacitor C0 and a collector of an IGBT0, a relay switch K3 is arranged between the charging point capacitor C0 and a resistor R1, K1, K2 and K3 are all high-voltage vacuum relays with load on-off capacity, and the three form a first relay switch group in a high-voltage microsecond pulse modulation circuit.
The utility model discloses further preferred scheme does: in the Marx discharge circuit, a relay switch K5 is arranged between a primary charge-discharge structure and direct current, a relay switch K4 is arranged on a final charge-discharge structure, and K4 and K5 are high-voltage vacuum relays with load on-off capacity and form a second group of relay switch sets in the Marx discharge circuit.
The utility model discloses further preferred scheme does: the Marx discharge circuit has a 4-level or 5-level charge-discharge structure.
The utility model also provides an ablation device, which comprises an electric pulse modulation circuit and an electrode component, wherein the electric pulse modulation circuit adopts the high-voltage composite electric pulse modulation circuit; the electrode assembly comprises an electrode A and an electrode B, the electrode A is respectively coupled to the discharge ends of the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit, and the electrode B is grounded.
The utility model discloses further preferred scheme does: the two electrodes are respectively provided with a voltage sampling circuit and a current sampling circuit, and the sampling voltage and the sampling current are respectively transmitted to the singlechip through an analog-to-digital conversion circuit.
To sum up, the utility model discloses following beneficial effect has: 1. the linear superposition sending of high-voltage nanosecond pulse and microsecond pulse is realized, and the treatment effect is enhanced; 2. and the combination of multiple parameters provides hardware support for better exploring a treatment mechanism.
Drawings
Fig. 1 is a block diagram of the ablation device of the present invention.
Fig. 2 is a schematic circuit diagram of the high-voltage composite electric pulse modulation circuit of the present invention.
Fig. 3 is a high-voltage composite pulse waveform modulated by the ablation device of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications without inventive contribution to the present embodiment as required after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.
As shown in fig. 1 and 2, an ablation device including the high voltage composite electrical pulse modulation circuit and an electrode assembly is shown.
The high-voltage composite electric pulse modulation circuit comprises a direct-current adjustable voltage-stabilized power supply circuit, a high-voltage microsecond pulse modulation circuit, a Marx discharge circuit, a relay switch group and a control circuit.
The DC adjustable voltage-stabilized power supply circuit is used for configuring 2-3kV DC, belongs to the prior art, and is not detailed herein.
And the high-voltage microsecond pulse modulation circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and is used for modulating microsecond pulses. In this embodiment, the high-voltage microsecond pulse modulation circuit includes a charging capacitor C0, a resistor R1, and an IGBT driving module; the IGBT driving module is controlled by a control circuit.
And the Marx discharge circuit is coupled to the direct-current adjustable voltage-stabilized power supply circuit and is used for modulating the high-voltage nanosecond pulse. In this embodiment, the Marx discharge circuit is a circuit of a multi-stage charge-discharge structure formed by taking an IGBT as a driving module; and the IGBT driving module in each stage of charging and discharging structure is controlled by the control circuit. Generally, the Marx discharge circuit only needs to adopt a 4-level or 5-level charge-discharge structure. In this embodiment, the IGBT driving modules all adopt N-type IGBTs, which are IGBT1, IGBT2, IGBT … …, and IGBT in this order.
And the relay switch group comprises two groups, one group is arranged on the high-voltage microsecond pulse modulation circuit, and the other group is arranged on the Marx discharge circuit.
And the control circuit is in signal connection with the relay switch group and controls the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit to alternately work through the two groups of relay switches so as to generate high-voltage composite electric pulses. The control circuit comprises a single chip microcomputer and an FPGA chip, and the single chip microcomputer is electrically connected with the IGBT driving module through the FPGA chip.
In the high-voltage microsecond pulse modulation circuit, one end of a charging capacitor C0 is coupled to direct current, and the other end is used for releasing microsecond pulses to an electrode; the IGBT driving module adopts an N-type IGBT0, a collector electrode of the IGBT driving module is coupled to one end of the charging capacitor, a grid electrode of the IGBT driving module is connected with the FPGA chip, and an emitter electrode of the IGBT driving module is grounded; the resistor R1 is coupled to one end of the charging capacitor; a relay switch K1 is arranged between the charging point capacitor C0 and direct current, a relay switch K2 is arranged between the charging point capacitor C0 and a collector of an IGBT0, a relay switch K3 is arranged between the charging point capacitor C0 and a resistor R1, K1, K2 and K3 are all high-voltage vacuum relays with load on-off capacity, and the three form a first relay switch group in a high-voltage microsecond pulse modulation circuit.
In the Marx discharge circuit, a relay switch K5 is arranged between a first-stage charge-discharge structure and direct current, a relay switch K4 is arranged on a last-stage charge-discharge structure, K4 and K5 are high-voltage vacuum relays with load on-off capacity, and the two relay switches form a second group of relay switch group in the Marx discharge circuit.
The electrode assembly comprises an electrode A and an electrode B, the electrode A is respectively coupled to the discharge ends of the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit, and the electrode B is grounded. The waveform of the high-voltage composite pulse generated between the two electrodes is shown in fig. 3.
The two electrodes are respectively provided with a voltage sampling circuit and a current sampling circuit. In this embodiment, sampling resistors R2 and R3 are connected in series between the ground terminal and the connection point of the electrode a and the charging capacitor C0, and a sampling voltage is generated between the ground terminal and the connection point between the resistors R2 and R3. A resistor R4 is connected in series between the electrode B and the ground to obtain the sampling current. The sampling voltage and the sampling current are respectively transmitted to the singlechip through the analog-to-digital conversion circuit.
The specific working principle is as follows: the whole circuit mainly comprises a high-voltage power supply, an IGBT, a high-voltage vacuum relay, a high-voltage silicon stack, a resistor and the like, and C0 is an energy storage capacitor for sending microsecond pulses.
When the circuit does not work, the high-voltage vacuum relays K1 and K2 are opened, K3 is in a normally closed state, and the capacitor discharging loop is formed by the C0 through K3, R1, R2 and R3, so that large energy cannot be stored in the C0, and safety is guaranteed. When a microsecond pulse needs to be sent, two processes, charging and discharging, need to be passed. During charging, K1 and K2 are closed, K3 is opened, the high-voltage power supply charges C0 through constant-current output, and K1 is opened after the voltage reaches a preset value. The single chip microcomputer is switched on by controlling the FPGA chip IGBT0, the C0 discharges through the K2, the IGBT0, the R4 and the tumor tissue, and after the preset pulse width is reached, the single chip microcomputer is switched off by controlling the FPGA chip IGBT0, so microsecond pulses are formed in the tumor tissue.
C1 and C2 … Cn are energy storage capacitors for sending nanosecond pulses, and the pulse width is nanosecond, so that the biological effect of inducing tumor apoptosis is achieved, the required pulse amplitude voltage needs to be very high. The number of capacitors can be determined based on the specific capacitance parameters and the voltage amplitude that needs to be achieved.
When the system does not work, K5 is disconnected, K4 is in a normally closed state, C1 and C2 … Cn form a capacitance discharging loop through K4, R2, R3 and a high-voltage silicon stack, so that C1 and C2 … Cn cannot store large energy, and safety is guaranteed.
When nanosecond pulses need to be sent, the energy storage capacitor needs to be subjected to two processes of parallel charging and serial discharging. During charging, K5 is closed, K4 is opened, and a high-voltage power supply charges C1 and C2 … Cn capacitors in parallel through constant-current output. When the voltage reaches a predetermined value, K5 is turned off. The single chip microcomputer controls the FPGA chip IGBT1 and the IGBT2 … IGBTn to be conducted, and if the charging voltage on each capacitor is U, the amplitude of the parallel discharging voltage is (n-1) × U.
The single chip microcomputer controls the FPGA chip and the relay switch group to enable the Marx discharge circuit and the high-voltage microsecond pulse modulation circuit to work alternately in the same pulse delivery period, firstly, the high-voltage nanosecond pulse is utilized to puncture a cell nuclear membrane, and the impedance of cells is changed at the moment of breaking the cell nuclear membrane, so that the subsequent microsecond pulse can puncture a cell membrane more quickly, and a better treatment effect can be realized.
In this circuit, R2 and R3 are connected in series, and the pulse voltage is sampled by R3. R4 is connected in series with the electrode assembly for current sampling.
Claims (9)
1. A high-voltage composite electric pulse modulation circuit is characterized by comprising,
the direct current adjustable voltage-stabilized power supply circuit is used for configuring direct current of 2-3 kV;
the high-voltage microsecond pulse modulation circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and is used for modulating microsecond pulses;
the Marx discharge circuit is coupled with the direct-current adjustable voltage-stabilized power supply circuit and used for modulating the high-voltage nanosecond pulse; the relay switch group comprises two groups, one group is arranged on the high-voltage microsecond pulse modulation circuit, and the other group is arranged on the Marx discharge circuit;
and the control circuit is in signal connection with the relay switch group, and controls the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit to alternately work through two groups of relay switches to generate the high-voltage composite electric pulse.
2. The high-voltage composite electric pulse modulation circuit according to claim 1, wherein: the high-voltage microsecond pulse modulation circuit comprises a charging capacitor C0, a resistor R1 and an IGBT driving module; the IGBT driving module is controlled by the control circuit.
3. The high-voltage composite electric pulse modulation circuit according to claim 2, wherein: the Marx discharge circuit is a circuit with a multi-stage charge-discharge structure formed by taking an IGBT as a driving module; and the IGBT driving module in each stage of charging and discharging structure is controlled by the control circuit.
4. The high-voltage composite electric pulse modulation circuit according to claim 3, wherein: the control circuit comprises a single chip microcomputer and an FPGA chip, and the single chip microcomputer is electrically connected with the IGBT driving module through the FPGA chip.
5. The high-voltage composite electric pulse modulation circuit according to claim 4, wherein: in the high-voltage microsecond pulse modulation circuit, one end of a charging capacitor C0 is coupled to direct current, and the other end is used for releasing microsecond pulses to an electrode; the IGBT driving module adopts an N-type IGBT0, a collector electrode of the IGBT driving module is coupled to one end of the charging capacitor, a grid electrode of the IGBT driving module is connected with the FPGA chip, and an emitter electrode of the IGBT driving module is grounded; the resistor R1 is coupled to one end of the charging capacitor; a relay switch K1 is arranged between the charging point capacitor C0 and direct current, a relay switch K2 is arranged between the charging point capacitor C0 and a collector of an IGBT0, a relay switch K3 is arranged between the charging point capacitor C0 and a resistor R1, K1, K2 and K3 are all high-voltage vacuum relays with load on-off capacity, and the three form a first relay switch group in a high-voltage microsecond pulse modulation circuit.
6. The high-voltage composite electric pulse modulation circuit according to claim 5, wherein: in the Marx discharge circuit, a relay switch K5 is arranged between a primary charge-discharge structure and direct current, a relay switch K4 is arranged on a final charge-discharge structure, and K4 and K5 are high-voltage vacuum relays with load on-off capacity and form a second group of relay switch sets in the Marx discharge circuit.
7. The high-voltage composite electric pulse modulation circuit according to claim 6, wherein: the Marx discharge circuit has a 4-level or 5-level charge-discharge structure.
8. An ablation apparatus comprising an electrical pulse modulation circuit and an electrode assembly, wherein the electrical pulse modulation circuit employs a high voltage composite electrical pulse modulation circuit as claimed in any one of claims 1-7; the electrode assembly comprises an electrode A and an electrode B, the electrode A is respectively coupled to the discharge ends of the high-voltage microsecond pulse modulation circuit and the Marx discharge circuit, and the electrode B is grounded.
9. The ablation apparatus of claim 8, wherein a voltage sampling circuit and a current sampling circuit are respectively disposed on the two electrodes, and the sampled voltage and the sampled current are respectively transmitted to the single chip via the analog-to-digital conversion circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922048495.6U CN211300301U (en) | 2019-11-25 | 2019-11-25 | High-voltage composite electric pulse modulation circuit and ablation equipment |
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| CN201922048495.6U CN211300301U (en) | 2019-11-25 | 2019-11-25 | High-voltage composite electric pulse modulation circuit and ablation equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113755318A (en) * | 2021-09-03 | 2021-12-07 | 重庆大学 | Composite pulse cell electrofusion instrument and control method |
| WO2023016520A1 (en) * | 2021-08-11 | 2023-02-16 | 杭州维纳安可医疗科技有限责任公司 | Synergistic pulse generation circuit, generation apparatus, and generation method therefor |
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2019
- 2019-11-25 CN CN201922048495.6U patent/CN211300301U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023016520A1 (en) * | 2021-08-11 | 2023-02-16 | 杭州维纳安可医疗科技有限责任公司 | Synergistic pulse generation circuit, generation apparatus, and generation method therefor |
| CN113755318A (en) * | 2021-09-03 | 2021-12-07 | 重庆大学 | Composite pulse cell electrofusion instrument and control method |
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