CN104124204A - Method for improving aluminum residue in semiconductor process flow - Google Patents
Method for improving aluminum residue in semiconductor process flow Download PDFInfo
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- CN104124204A CN104124204A CN201310157974.6A CN201310157974A CN104124204A CN 104124204 A CN104124204 A CN 104124204A CN 201310157974 A CN201310157974 A CN 201310157974A CN 104124204 A CN104124204 A CN 104124204A
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- conductive layer
- composite metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for improving aluminum residue in a semiconductor process flow. The method for improving the aluminum residue in the semiconductor process flow includes that arranging a titanium metal layer Ti between a conductive layer AlCu and an upper barrier layer metal TiN of an aluminum composite metal film when growing the aluminum-interconnection composite metal film on a silicon chip, and meanwhile, increasing the thickness of each of the conductive layer AlCu and the upper barrier layer metal TiN, and lowering the growth temperature for the aluminum-interconnection composite metal film. The method is capable of effectively improving the aluminum residue problem of the semiconductor manufacturing process and can be realized through the existing equipment, and the cost is rarely increased.
Description
[technical field]
The invention relates to manufacture of semiconductor field, particularly about a kind of, improve the residual method of aluminium in semiconductor process flow.
[background technology]
Semi-conductive processing procedure generally includes step that the device of leading portion forms and the metal interconnected step of back segment.Wherein when interface unit layer and outside gold thread, can use many aluminum steel bars, if it is residual that aluminum steel bar has in corrosion, can cause producing electric leakage between the aluminum strip of aluminum strip river and even cause conducting, and then directly affect the performance of device, cause the inefficacy of electrical property.
Existing many manufacturers generally can consider that the maintenance of doing spare part or target improves the residual problem of aluminium, because generally can obtain better process conditions after process cavity maintenance, but this has increased manufacturing cost, and cannot address this problem from source.
Some manufacturer can improve the residual of aluminium by improving the ability of aluminium corrosion, but its result neither be too desirable.
[summary of the invention]
The object of the present invention is to provide a kind of residual method of aluminium in semiconductor process flow of improving.
Another object of the present invention is to provide the composite metal membrane of the aluminium interconnection in a kind of semiconductor manufacture.
A further object of the present invention is to provide the manufacture method of the aluminium interconnection composite metal membrane in a kind of semiconductor manufacture.
For reaching aforementioned object, the present invention is a kind of improves the residual method of aluminium in semiconductor process flow, and it comprises:
When forming aluminium interconnection composite metal membrane, conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, and reduce the growth temperature of aluminium interconnection composite metal membrane.
According to one embodiment of present invention, the thickness of the titanium coating Ti between the described aluminium interconnection conductive layer AlCu of composite metal membrane and the barrier metal TiN of top is
be preferably
According to one embodiment of present invention, the thickness of the barrier metal TiN of the conductive layer AlCu top of described aluminium interconnection composite metal membrane is for being
be preferably
According to one embodiment of present invention, the growth temperature of described aluminium interconnection composite metal membrane is 230 degree～270 degree, is preferably 250 degree.
For reaching aforementioned another object, a kind of aluminium interconnection of the present invention composite metal membrane, wherein this aluminium interconnection composite metal membrane comprises middle conductive layer AlCu, is positioned at contact layer metal and the barrier metal Ti/TiN of conductive layer AlCu below, and the barrier metal and the antireflecting coating TiN that are positioned at conductive layer top.Described conductive layer AlCu and above barrier metal TiN between be also formed with one deck titanium coating Ti.
For reaching an aforementioned object again, a kind of method of manufacturing aluminium interconnection composite metal membrane of the present invention, it comprises:
On silicon chip, form one deck contact layer metal Ti,
In contact layer metal Ti, form one deck barrier metal TiN;
On barrier metal, form one deck conductive layer AlCu;
On conductive layer metal A lCu, form one deck titanium coating Ti;
On titanium coating Ti, form one deck barrier metal TiN.
In semiconductor fabrication process of the present invention, during the aluminium of growing on silicon chip interconnection composite metal membrane, conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, and reduce the growth temperature of aluminium interconnection composite metal membrane, by method of the present invention, can effectively improve the residual problem of aluminium in semiconductor fabrication process.By existing equipment, can realize, cost does not almost increase.
[accompanying drawing explanation]
Fig. 1 manufactures the schematic diagram of aluminum metal line in existing technology.
Fig. 2 is the structural representation of existing aluminium interconnection composite metal membrane.
Fig. 3 is the structural representation of aluminium interconnection composite metal membrane of the present invention.
Fig. 4 is the manufacturing step flow chart of aluminium interconnection composite metal membrane of the present invention.
Fig. 5 is the comparison diagram in aluminum metal surface pattern gap at the lines gap on aluminum metal surface at temperature of the present invention and existing temperature, the aluminium lines gap figure that wherein left figure is prior art, and right figure is aluminium lines gap figure of the present invention.
Fig. 6 is the residual statistic curve figure of aluminium after its demonstration reduction aluminium growth temperature.
Fig. 7 adopts two kinds of methods of the present invention residual statistic curve figure of aluminium afterwards simultaneously.
[embodiment]
Alleged " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the present invention herein.Different local in this manual " in one embodiment " that occur not all refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.
As shown in Figure 1, it shows the schematic diagram of manufacturing aluminum metal line in existing technology.As shown in fig. 1, when manufacturing metal interconnecting wires, the aluminium of first growing on silicon chip, then on aluminium, be coated with one deck photoresist, then by mask plate, expose and form the shape that needs etching, through over etching, remove the aluminium that unwanted photoresist exposes needs corrosion afterwards, then aluminum metal is corroded to form the interconnect metallization lines needing, after corroding aluminium, remove again remaining photoresist, form the metal interconnecting wires that one deck has reservation shape.Wherein on silicon chip, grown after aluminium, the surface of aluminium there will be a certain size lines gap (grain), when removal part photoresist exposes the aluminium of needs corrosion, because photoresist can remain in the lines gap location on aluminium surface, so when carrying out the corrosion of aluminium, because aluminium surface pattern gap location remains photoresist, this part aluminium cannot be corroded completely, so can cause the residual of aluminium.
When therefore causing the residual basic reason of aluminium to be because forming aluminum metal, have lines gap, cause the residual of photoresist, aluminium cannot be corroded and totally form the residual of aluminium.Institute thinks and addresses this problem, and must or eliminate the lines gap on aluminium surface, or reduces photoresist residual of aluminium surface pattern gap location.
As shown in Figure 2, aluminum metal line is actually the aluminium interconnection composite metal membrane being comprised of multiple layer metal, it comprises middle conductive layer AlCu, is positioned at contact layer metal and the barrier metal Ti/TiN of conductive layer AlCu below, and the barrier metal layer TiN that is positioned at conductive layer top.Column structure due to the barrier metal layer TiN of conductive layer top in existing aluminium interconnection composite metal membrane easily makes photoresist along with the lines gap location on aluminum metal surface enters the inside of aluminium film, so can form residual at aluminium surface pattern gap location of photoresist.So method of the present invention is when growth aluminium interconnection composite metal membrane, conductive layer AlCu and above barrier metal layer TiN between set up one deck titanium coating Ti, increase the thickness of the barrier metal layer TiN of conductive layer top simultaneously, photoresist cannot enter aluminium film inside like this, when removing photoresist, can reduce the residual of photoresist, and then can reduce the residual of aluminum metal when etching aluminium.
That is to say, as shown in Figure 3, aluminium of the present invention interconnection composite metal membrane, its final structure comprise the bottom contact layer metal Ti, be positioned at contact layer metal Ti top barrier metal layer TiN, be positioned at barrier metal layer TiN top conductive layer AlCu, be positioned at the titanium coating Ti of conductive layer AlCu top and the barrier metal TiN that is positioned at titanium coating Ti top.Namely the structure of aluminum metal is Ti+TiN+AlCu+Ti+TiN.
As shown in Figure 4, the manufacturing step of aluminium interconnection composite metal membrane of the present invention comprises:
Step S1: form one deck contact layer metal Ti on silicon chip.The concrete step forming can be to adopt the method for physical vapour deposition (PVD) to form contact layer metal Ti.So-called physical vapour deposition (PVD) utilizes the ion in plasma, to by sputter object electrode (that is: target) bombardment, makes target surface atom depart from target and moves to disk surfaces deposition film forming.Because the method for physical vapour deposition (PVD) is the method that those skilled in the art should know, the present invention no longer each parameter of the pressure to the concrete steps details of physical vapour deposition (PVD) and while depositing, temperature etc. etc. describes.
Step S2: form one deck barrier metal TiN in contact layer metal Ti.The concrete method forming can be by the method for physical vapour deposition (PVD).
Step S3: form one deck conductive layer AlCu on barrier metal.The concrete method forming can be by the method for physical vapour deposition (PVD).
Step S4: form one deck titanium coating Ti on conductive layer metal A lCu, wherein the thickness of titanium coating Ti is
be preferably
the concrete method forming can be by the method for physical vapour deposition (PVD).
Step S5: form one deck barrier metal TiN on titanium coating Ti, wherein the thickness of the TiN in the existing aluminium interconnection of the Thickness Ratio of this barrier metal TiN composite metal membrane is thick, and its thickness is
be preferably
the concrete method forming can be by the method for physical vapour deposition (PVD).
More than in the residual method of the lines gap location on aluminum metal surface, to reduce the residual of aluminum metal by reducing photoresist.As previously mentioned, if can reduce the lines gap on aluminum metal surface, more can there is not residual at the lines gap location on aluminum metal surface of photoresist.So further solution of the present invention is for reducing the lines gap on aluminum metal surface, concrete method is the temperature while controlling aluminum metal growth.The growth temperature of existing aluminum metal is generally 300 degree, and the growth temperature of aluminum metal of the present invention is reduced to 250 degree, during have the fluctuations of positive and negative 20 degree, be also that the growth temperature of aluminum metal is reduced to 230～270 degree.
As shown in Figure 5, the comparison that it shows aluminum metal surface pattern gap at the lines gap on aluminum metal surface at temperature of the present invention and existing temperature, as can be seen from the figure adopts the lines gap on aluminum metal surface of method of the present invention obviously few than the lines gap on aluminum metal surface at existing temperature.
As shown in Figure 6, the residual statistic curve figure of aluminium after its demonstration reduction aluminium growth temperature, as can be seen from Figure, after reducing aluminium growth temperature, the minimizing in the lines gap on aluminum metal surface also greatly reduces the residual situation of aluminium.
According to above explanation, method of the present invention, a kind of be by the conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, reduce residual at aluminum metal surface pattern gap location of photoresist, and then improve the residual of aluminum metal; Another method is by reducing the growth temperature of aluminium interconnection composite metal membrane, the growth in aluminum metal surface pattern gap less now, and photoresist is residual aluminum metal surface pattern gap location, and then improves the residual of aluminum metal.Certainly the present invention also can implement two kinds of methods simultaneously, the conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, and reduce the growth temperature of aluminium interconnection composite metal membrane.
As shown in Figure 7, its show the present invention by the conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, and the residual curve chart of aluminium after the growth temperature of reduction aluminium interconnection composite metal membrane.Adopting as can be seen from Figure the residual quantity of aluminium after method of the present invention is 0, can prove that method of the present invention can substantially improve the residual of aluminium in semiconductor process flow.
In semiconductor fabrication process of the present invention, during the aluminium of growing on silicon chip interconnection composite metal membrane, conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, and reduce the growth temperature of aluminium interconnection composite metal membrane, by method of the present invention, can effectively improve the residual problem of aluminium in semiconductor fabrication process.By existing equipment, can realize, cost does not almost increase.
Above-mentioned explanation has fully disclosed the specific embodiment of the present invention.It is pointed out that being familiar with any change that person skilled in art does the specific embodiment of the present invention does not all depart from the scope of claims of the present invention.Correspondingly, the scope of claim of the present invention is also not limited only to previous embodiment.
Claims (10)
1. improve the residual method of aluminium in semiconductor process flow, it comprises:
When forming aluminium interconnection composite metal membrane, conductive layer AlCu in aluminum composite metal film and above barrier metal TiN between set up one deck titanium coating Ti, improve the thickness of the barrier metal TiN of conductive layer AlCu and top simultaneously, and reduce the growth temperature of aluminium interconnection composite metal membrane.
2. the method for claim 1, is characterized in that: the thickness of the titanium coating Ti between the described aluminium interconnection conductive layer AlCu of composite metal membrane and the barrier metal TiN of top is
be preferably
3. the method for claim 1, is characterized in that: the thickness of the barrier metal TiN of the conductive layer AlCu top of described aluminium interconnection composite metal membrane is
be preferably
4. the method for claim 1, is characterized in that: the growth temperature of described aluminium interconnection composite metal membrane is 230 degree～270 degree, is preferably 250 degree.
5. aluminium interconnection composite metal membrane, wherein this aluminium interconnection composite metal membrane comprises middle conductive layer AlCu, is positioned at contact layer metal and the barrier metal Ti/TiN of conductive layer AlCu below, and the barrier metal and the antireflecting coating TiN that are positioned at conductive layer top; It is characterized in that: described conductive layer AlCu and above barrier metal TiN between be also formed with one deck titanium coating Ti.
6. aluminium interconnection composite metal membrane as claimed in claim 5, is characterized in that: the thickness of the titanium coating Ti between the described aluminium interconnection conductive layer AlCu of composite metal membrane and the barrier metal TiN of top is
be preferably
7. aluminium interconnection composite metal membrane as claimed in claim 5, is characterized in that: the thickness of the barrier metal TiN of the conductive layer AlCu top of described aluminium interconnection composite metal membrane is
be preferably
8. a method of manufacturing aluminium interconnection composite metal membrane, it comprises:
On silicon chip, form one deck contact layer metal Ti,
In contact layer metal Ti, form one deck barrier metal TiN;
On barrier metal, form one deck conductive layer AlCu;
On conductive layer metal A lCu, form one deck titanium coating Ti;
On titanium coating Ti, form one deck barrier metal TiN.
9. the method for manufacture aluminium interconnection composite metal membrane as claimed in claim 8, is characterized in that: the thickness of the titanium coating Ti between the described aluminium interconnection conductive layer AlCu of composite metal membrane and the barrier metal TiN of top is
be preferably
the thickness of the barrier metal TiN of the conductive layer AlCu top of described aluminium interconnection composite metal membrane is
be preferably
10. the method for manufacture aluminium interconnection composite metal membrane as claimed in claim 8, is characterized in that: the growth temperature of described aluminium interconnection composite metal membrane is 230 degree～270 degree, is preferably 250 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310157974.6A CN104124204A (en) | 2013-04-28 | 2013-04-28 | Method for improving aluminum residue in semiconductor process flow |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310157974.6A CN104124204A (en) | 2013-04-28 | 2013-04-28 | Method for improving aluminum residue in semiconductor process flow |
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| CN104124204A true CN104124204A (en) | 2014-10-29 |
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| CN201310157974.6A Pending CN104124204A (en) | 2013-04-28 | 2013-04-28 | Method for improving aluminum residue in semiconductor process flow |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379451A (en) * | 2001-04-10 | 2002-11-13 | 华邦电子股份有限公司 | Method for forming electric conducting layer with less residuals of metal etching |
| US20040092130A1 (en) * | 2002-11-05 | 2004-05-13 | Tetsuo Usami | Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime |
| JP2004200722A (en) * | 2004-03-17 | 2004-07-15 | Matsushita Electric Ind Co Ltd | Method of dry etching |
| CN1567547A (en) * | 2003-06-12 | 2005-01-19 | 矽统科技股份有限公司 | Modification method for metallic layer |
| CN1763944A (en) * | 2004-09-29 | 2006-04-26 | 恩益禧电子股份有限公司 | Semiconductor device and manufacturing method thereof |
| CN101335234A (en) * | 2007-06-25 | 2008-12-31 | 东部高科股份有限公司 | Method of improving interconnection between aluminum and copper in semiconductor metal line process |
| CN101399185A (en) * | 2007-09-30 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Method for protecting metallic layer and forming solder pad, metallic routing layer and micro-mirror surface |
| US20090230555A1 (en) * | 2008-03-17 | 2009-09-17 | International Business Machines Corporation | Tungsten liner for aluminum-based electromigration resistant interconnect structure |
| CN103050398A (en) * | 2011-10-14 | 2013-04-17 | 无锡华润上华半导体有限公司 | Method for manufacturing thick semiconductor metal structure |
-
2013
- 2013-04-28 CN CN201310157974.6A patent/CN104124204A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379451A (en) * | 2001-04-10 | 2002-11-13 | 华邦电子股份有限公司 | Method for forming electric conducting layer with less residuals of metal etching |
| US20040092130A1 (en) * | 2002-11-05 | 2004-05-13 | Tetsuo Usami | Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime |
| CN1567547A (en) * | 2003-06-12 | 2005-01-19 | 矽统科技股份有限公司 | Modification method for metallic layer |
| JP2004200722A (en) * | 2004-03-17 | 2004-07-15 | Matsushita Electric Ind Co Ltd | Method of dry etching |
| CN1763944A (en) * | 2004-09-29 | 2006-04-26 | 恩益禧电子股份有限公司 | Semiconductor device and manufacturing method thereof |
| CN101335234A (en) * | 2007-06-25 | 2008-12-31 | 东部高科股份有限公司 | Method of improving interconnection between aluminum and copper in semiconductor metal line process |
| CN101399185A (en) * | 2007-09-30 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Method for protecting metallic layer and forming solder pad, metallic routing layer and micro-mirror surface |
| US20090230555A1 (en) * | 2008-03-17 | 2009-09-17 | International Business Machines Corporation | Tungsten liner for aluminum-based electromigration resistant interconnect structure |
| CN103050398A (en) * | 2011-10-14 | 2013-04-17 | 无锡华润上华半导体有限公司 | Method for manufacturing thick semiconductor metal structure |
Non-Patent Citations (1)
| Title |
|---|
| 姜晨: "互连线工艺中铝上窜至VIA 的研究", 《电子器件》 * |
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