CN102832167B - Metal hard mask layer preparation method and semiconductor making method - Google Patents
Metal hard mask layer preparation method and semiconductor making method Download PDFInfo
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- CN102832167B CN102832167B CN201210208994.7A CN201210208994A CN102832167B CN 102832167 B CN102832167 B CN 102832167B CN 201210208994 A CN201210208994 A CN 201210208994A CN 102832167 B CN102832167 B CN 102832167B
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Abstract
The invention provides a kind of metal hard mask layer preparation method and semiconductor making method.Copper-connection formation method according to the present invention comprises: provide substrate; Deposition preventing film in substrate; Deposit dielectric film on block film; Depositing metal hard mask layer on dielectric film; UV-irradiation process is carried out to metal hard mask layer; The hard mask cover layer of deposit on metal hard mask layer; Fill order Damascus etching technics and/or dual damascene etching technics with etch media film, hard mask and hard mask cover layer, thus expose the hole at least partially of porous media film.According to the present invention, through UV-irradiation process, the inner more weak chemical bond of metal hard mask layer film can be removed, and improves the quality of metal hard mask layer film; Metal hard mask layer film produces and shrinks, and makes metal hard mask layer film shrunk and produces the stress tending to stretch, thus can offset compression larger in part metals hard mask layer film.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of metal hard mask layer preparation method, copper-connection formation method and have employed the semiconductor making method of described metal hard mask layer preparation method.
Background technology
At 0.13um and more advanced last part technology, copper-connection be widely used as due to lower resistivity and better deelectric transferred performance aluminium interconnection substitute.Completing of copper wiring technique can adopt the method for metal hard mask layer to realize.The damage adopting this technique can reduce low-k interlayer dielectric medium to cause in dry method etching process, reduce the consumption of photoresistance, and this film is sacrifice layer, can not retain in final product, thus this technique is widely used in the copper-connection of below 65nm.
Usual employing PVD(physical vapor deposition, PhysicalVaporDeposition) as the preparation method of the titanium nitride membrane of metal hard mask layer.
But find in the production process of reality, the stress of titanium nitride membrane is very high, is about-1.4GPa, the titanium nitride membrane with higher stress can produce certain effect to the low dielectric constant films below it and cause it to deform, thus affects the yield of product.
The method of current this problem of solution is by adjustment depositing titanium nitride thin film parameter, and changes the stress of film, and then reduces the effect of this film for low dielectric constant films power below it, improves product yield.
To the adjustment of titanium nitride membrane deposition parameter, although make the stress of film reduce to some extent, the resistivity evenness of this film is affected to some extent, and then the processing procedures such as its follow-up etching can be had influence on.Therefore, need a kind of method can either reduce the stress of this film, other performances of film can be made again not by too much influence.
Summary of the invention
Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, a kind of stress that can either reduce this film is provided, other performances of film can be made again not to be subject to the metal hard mask layer preparation method of too much influence and to have employed the semiconductor making method of described metal hard mask layer preparation method.
According to a first aspect of the invention, provide a kind of metal hard mask layer preparation method, it comprises: provide substrate; Substrate forms metal hard mask layer; And UV-irradiation process is carried out to described metal hard mask layer.
Preferably, in above-mentioned metal hard mask layer preparation method, described metal hard mask layer is titanium nitride layer.
According to a second aspect of the invention, provide a kind of copper-connection formation method, it comprises: provide substrate; Deposition preventing film in substrate; Deposit dielectric film on described block film; Depositing metal hard mask layer on described dielectric film; UV-irradiation process is carried out to described metal hard mask layer; The hard mask cover layer of deposit on described metal hard mask layer; Fill order Damascus etching technics and/or dual damascene etching technics to etch described dielectric film, described hard mask and described hard mask cover layer, thus expose the hole at least partially of porous media film.
Preferably, in described copper-connection formation method, described metal hard mask layer is titanium nitride film.
Preferably, in described copper-connection formation method, in the step of described depositing metal hard mask layer on described dielectric film, metallorganic chemical vapor deposition is adopted to form described metal hard mask layer.
Preferably, in described copper-connection formation method, the thickness range of described metal hard mask layer is 100-1000A.
Preferably, in described copper-connection formation method, described metal hard mask layer is carried out in the step of UV-irradiation process described,
Preferably, in described copper-connection formation method, the wave-length coverage of the UV-irradiation adopted in UV-irradiation process is 320-400nm, and irradiation temperature scope is 300-500C, and irradiation time is 2-7 minute.
Preferably, described copper-connection formation method comprises: the Cu barrier layer during execution multiple layer metal is interconnected and/or the deposit of crystal seed layer; And formation layers of copper.
According to a third aspect of the invention we, a kind of method, semi-conductor device manufacturing method that have employed metal hard mask layer preparation method described is according to a first aspect of the invention provided.
The present invention proposes a kind of preparation method being particularly useful for the metal hard mask layer of copper-connection.This metal hard mask layer preparation method is after conventional metal hard mask layer has deposited, UV-irradiation is carried out to this film, because UV-irradiation can improve the quality of film, make film shrunk and produce the stress tending to stretch, thus compression larger in part film can be offset.Adopt the method can reduce the stress of titanium nitride membrane, thus reduce its lower film produces metaboly generation possibility owing to being subject to the heavily stressed of titanium nitride membrane.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 to Fig. 3 is the schematic diagram of the copper wiring technique according to prior art.
Fig. 4 is the metal hard mask layer preparation method according to the embodiment of the present invention.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
First the metal interconnected technique of Cu used at present is introduced before explaining embodiments of the invention in detail.Specifically, the metal interconnected processing step of Cu is usually as follows:
1) the low K block film 3 first in the upper deposit multiple layer metal of substrate (such as the substrate comprising porous low-K dielectric film 1) is as shown in Figure 1 interconnected;
2) after this carry out multiple layer metal interconnected in low-K dielectric film 4 deposit: usually adopt SiOC dielectric film (such as SiHCON) below 45nm technique;
3) multiple layer metal interconnected in metal hard mask layer 5(such as titanium nitride layer) and hard mask cover layer 6(such as silicon dioxide layer) deposit; After this deposit photoresist 7, the structure obtained thus as shown in Figure 1;
4) dual damascene etching technics; The structure obtained thus as shown in Figure 2;
5) multiple layer metal interconnected in the deposit of Cu barrier layer/crystal seed layer 8; The structure obtained thus as shown in Figure 3;
6) after this, the structure shown in Fig. 3 forms copper metal layer (not shown).
< first embodiment >
With above-mentioned prior art unlike, as shown in Figure 4, in the metal hard mask layer preparation method of the embodiment of the present invention, after substrate is formed metal hard mask layer 5, UV-irradiation process is carried out to metal hard mask layer 5.After this, for according to the metal interconnected technique of the Cu of the embodiment of the present invention, subsequent step can be performed as prior art.
Thus, compared with original method, through UV-irradiation process, the inner more weak chemical bond of metal hard mask layer film can be removed, and improves the quality of metal hard mask layer film; Metal hard mask layer film produces and shrinks, and makes metal hard mask layer film shrunk and produces the stress tending to stretch, thus can offset compression larger in part metals hard mask layer film.
Use the method can reduce the stress of metal hard mask layer (titanium nitride membrane) under the prerequisite not affecting metal hard mask layer (being such as titanium nitride membrane) resistivity evenness, reduce its lower film produces metaboly generation possibility owing to being subject to the heavily stressed of metal hard mask layer (titanium nitride membrane).
According to another preferred embodiment of the invention, present invention also offers a kind of method, semi-conductor device manufacturing method that have employed above-mentioned metal hard mask layer preparation method.
< second embodiment >
Specifically describe the copper-connection formation method according to the embodiment of the present invention below.
Specifically, can comprise the steps: according to the copper-connection formation method of the embodiment of the present invention
First, deposition preventing film in substrate, such as, substrate is porous media film substrate.
After this, deposit dielectric film on described block film.
Subsequently, depositing metal hard mask layer on described dielectric film, wherein, preferably, described metal hard mask layer is titanium nitride film, and further preferably, here as preparation method's normally PVD(physical vapor deposition of the titanium nitride membrane of metal hard mask layer, PhysicalVaporDeposition), but MOCVD(metallorganic chemical vapor deposition, Metal-organicChemicalVaporDeposition) and ALD(ald) can as alternative mean; In addition, preferably, the thickness range of described metal hard mask layer is 100-1000A.
Then, carry out UV-irradiation process to described metal hard mask layer, wherein preferably, the wave-length coverage of the UV-irradiation adopted in UV-irradiation process is 320-400nm, and irradiation temperature scope is 300-500C, and irradiation time is 2-7 minute.
Subsequently, the hard mask cover layer of deposit on described metal hard mask layer;
Subsequently, fill order Damascus etching technics and/or dual damascene etching technics to etch described dielectric film, described hard mask and described hard mask cover layer, thus expose the hole at least partially of porous media film.
After this, can perform multiple layer metal interconnected in Cu barrier layer and/or the deposit of crystal seed layer.
Finally, layers of copper is formed.
Thus, compared with original method, through UV-irradiation process, the inner more weak chemical bond of metal hard mask layer film can be removed, and improves the quality of metal hard mask layer film; Metal hard mask layer film produces and shrinks, and makes metal hard mask layer film shrunk and produces the stress tending to stretch, thus can offset compression larger in part metals hard mask layer film.
Use the method can reduce the stress of metal hard mask layer (titanium nitride membrane) under the prerequisite not affecting metal hard mask layer (being such as titanium nitride membrane) resistivity evenness, reduce its lower film produces metaboly generation possibility owing to being subject to the heavily stressed of metal hard mask layer (titanium nitride membrane).
According to another preferred embodiment of the invention, present invention also offers a kind of method, semi-conductor device manufacturing method that have employed above-mentioned copper-connection formation method.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. a metal hard mask layer preparation method, is characterized in that comprising:
Substrate is provided;
Substrate forms metal hard mask layer;
UV-irradiation process is carried out to described metal hard mask layer; And
Carry out graphically carrying out the described metal hard mask layer after UV-irradiation process.
2. metal hard mask layer preparation method according to claim 1, is characterized in that, described metal hard mask layer is titanium nitride layer.
3. a copper-connection formation method, is characterized in that comprising:
There is provided substrate, described substrate comprises porous media film;
Deposition preventing film in substrate;
Deposit dielectric film on described block film;
Depositing metal hard mask layer on described dielectric film;
UV-irradiation process is carried out to described metal hard mask layer;
The hard mask cover layer of deposit on described metal hard mask layer;
Fill order Damascus etching technics and/or dual damascene etching technics to etch described dielectric film, to carry out the described metal hard mask layer after UV-irradiation process and described hard mask cover layer, thus expose the hole at least partially of porous media film.
4. copper-connection formation method according to claim 3, is characterized in that, described metal hard mask layer is titanium nitride film.
5. the copper-connection formation method according to claim 3 or 4, is characterized in that, on described dielectric film depositing metal hard mask layer step in, adopt metallorganic chemical vapor deposition form described metal hard mask layer.
6. the copper-connection formation method according to claim 3 or 4, is characterized in that, the thickness range of described metal hard mask layer is
7. the copper-connection formation method according to claim 3 or 4, is characterized in that, the wave-length coverage of the UV-irradiation adopted in UV-irradiation process is 320-400nm, and irradiation temperature scope is 300-500 DEG C, and irradiation time is 2-7 minute.
8. the copper-connection formation method according to claim 3 or 4, characterized by further comprising: the Cu barrier layer during execution multiple layer metal is interconnected and/or the deposit of crystal seed layer; And
Form layers of copper.
9. one kind have employed the method, semi-conductor device manufacturing method according to the metal hard mask layer preparation method one of claim 1 or 2 Suo Shu.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103413781B (en) * | 2013-08-27 | 2016-03-02 | 上海华力微电子有限公司 | The preparation method of a kind of metal hard mask layer and copper interconnection structure |
| CN103515312B (en) * | 2013-10-18 | 2017-02-08 | 上海华力微电子有限公司 | Preparation method for metal hard mask layer and copper interconnected structure |
| CN103531446A (en) * | 2013-10-18 | 2014-01-22 | 上海华力微电子有限公司 | Method for preparing interconnected structure of metal hard mask layer and copper |
| CN112151672B (en) * | 2019-06-28 | 2023-07-25 | 北京时代全芯存储技术股份有限公司 | Method for manufacturing laminated body |
| CN110459465B (en) * | 2019-08-30 | 2022-03-04 | 上海华力微电子有限公司 | Method for forming self-aligned double-layer pattern |
| CN110752150B (en) * | 2019-10-25 | 2022-02-01 | 上海华力集成电路制造有限公司 | Method for improving defect of metal hard mask titanium nitride particles |
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|---|---|---|---|---|
| EP0504912A1 (en) * | 1991-03-22 | 1992-09-23 | Shimadzu Corporation | Dry etching method and its application |
| CN1838400A (en) * | 2005-03-25 | 2006-09-27 | 恩益禧电子股份有限公司 | Method for manufacturing semiconductor device |
| TW201123295A (en) * | 2009-12-29 | 2011-07-01 | United Microelectronics Corp | Method of fomring patterns |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0504912A1 (en) * | 1991-03-22 | 1992-09-23 | Shimadzu Corporation | Dry etching method and its application |
| CN1838400A (en) * | 2005-03-25 | 2006-09-27 | 恩益禧电子股份有限公司 | Method for manufacturing semiconductor device |
| TW201123295A (en) * | 2009-12-29 | 2011-07-01 | United Microelectronics Corp | Method of fomring patterns |
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