CN104112776B - 具有晶体绝缘体的finfet及其形成方法 - Google Patents
具有晶体绝缘体的finfet及其形成方法 Download PDFInfo
- Publication number
- CN104112776B CN104112776B CN201410161352.5A CN201410161352A CN104112776B CN 104112776 B CN104112776 B CN 104112776B CN 201410161352 A CN201410161352 A CN 201410161352A CN 104112776 B CN104112776 B CN 104112776B
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- China
- Prior art keywords
- epitaxial
- crystalline
- semiconductor
- semiconductor region
- fin
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- 239000012212 insulator Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 13
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 11
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 9
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 229910001940 europium oxide Inorganic materials 0.000 claims description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- -1 yittrium oxide Chemical compound 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000012010 growth Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 229910002425 LaScO3 Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 208000001491 myopia Diseases 0.000 description 1
- 230000004379 myopia Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/867,247 | 2013-04-22 | ||
US13/867,247 US9257536B2 (en) | 2013-04-22 | 2013-04-22 | FinFET with crystalline insulator |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104112776A CN104112776A (zh) | 2014-10-22 |
CN104112776B true CN104112776B (zh) | 2017-04-12 |
Family
ID=51709501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410161352.5A Expired - Fee Related CN104112776B (zh) | 2013-04-22 | 2014-04-22 | 具有晶体绝缘体的finfet及其形成方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9257536B2 (zh) |
CN (1) | CN104112776B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9589827B2 (en) * | 2014-06-16 | 2017-03-07 | International Business Machines Corporation | Shallow trench isolation regions made from crystalline oxides |
US9306019B2 (en) * | 2014-08-12 | 2016-04-05 | GlobalFoundries, Inc. | Integrated circuits with nanowires and methods of manufacturing the same |
US9704860B1 (en) * | 2016-10-05 | 2017-07-11 | International Business Machines Corporation | Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation |
US9923081B1 (en) * | 2017-04-04 | 2018-03-20 | Applied Materials, Inc. | Selective process for source and drain formation |
US10256322B2 (en) * | 2017-04-04 | 2019-04-09 | Applied Materials, Inc. | Co-doping process for n-MOS source drain application |
US10319817B2 (en) | 2017-09-11 | 2019-06-11 | International Business Machines Corporation | Lattice matched epitaxial oxide layer for a super steep retrograde well |
US11011626B2 (en) | 2019-05-07 | 2021-05-18 | International Business Machines Corporation | Fin field-effect transistor with reduced parasitic capacitance and reduced variability |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6610548B1 (en) | 1999-03-26 | 2003-08-26 | Sony Corporation | Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory |
US6734453B2 (en) | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
US6852575B2 (en) * | 2001-07-05 | 2005-02-08 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
US8222680B2 (en) | 2002-10-22 | 2012-07-17 | Advanced Micro Devices, Inc. | Double and triple gate MOSFET devices and methods for making same |
JP2004356472A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US7352034B2 (en) | 2005-08-25 | 2008-04-01 | International Business Machines Corporation | Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures |
US20070287256A1 (en) | 2006-06-07 | 2007-12-13 | International Business Machines Corporation | Contact scheme for FINFET structures with multiple FINs |
US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
JP5285947B2 (ja) | 2008-04-11 | 2013-09-11 | 株式会社東芝 | 半導体装置、およびその製造方法 |
US8169024B2 (en) * | 2009-08-18 | 2012-05-01 | International Business Machines Corporation | Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation |
US8716797B2 (en) | 2009-11-03 | 2014-05-06 | International Business Machines Corporation | FinFET spacer formation by oriented implantation |
US8263451B2 (en) | 2010-02-26 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Epitaxy profile engineering for FinFETs |
US8362574B2 (en) | 2010-06-04 | 2013-01-29 | Kabushiki Kaisha Toshiba | Faceted EPI shape and half-wrap around silicide in S/D merged FinFET |
US8368146B2 (en) | 2010-06-15 | 2013-02-05 | International Business Machines Corporation | FinFET devices |
-
2013
- 2013-04-22 US US13/867,247 patent/US9257536B2/en active Active
-
2014
- 2014-04-22 CN CN201410161352.5A patent/CN104112776B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN104112776A (zh) | 2014-10-22 |
US20140312425A1 (en) | 2014-10-23 |
US9257536B2 (en) | 2016-02-09 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
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GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171115 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171115 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170412 Termination date: 20190422 |