CN1041066A - 可关断的半导体元件 - Google Patents
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Abstract
在具有直接压力接触的可关断的GTO型半导体元件中,使阳极金属化与阴极侧的栅-阴结构相匹配,可在指条状阴极(7)的区域内实现局部压力平衡,改善了交流负载电阻,并扩大了允许压力范围。
Description
本发明涉及功率电子学领域,特别涉及一种可关断的半导体元件,该元件包括:
(a)含有一系列不同掺杂层的半导体晶片,这些层被安排在一阴极和阳极之间,形成由栅极控制的栅关断晶闸管;
(b)在半导体晶片的阴极侧上的精细分开的栅-阴结构,该结构的许多象岛一样的指条状阴极被栅极区域所环绕;
(c)在指状阴极上的阴极金属化;
(d)在半导体晶片的阳极侧上的阳极金属化;
(e)阳极接触和阴极接触,这两个接触分别被压到阳极金属化、或者压到许多有限局部区域内的阴极金属化上,以实现接触。
此类半导体元件已被公开,例如:EP-AI 0,254,910。
在功率电子学领域中,不同于常规的晶闸管而经栅极直接关断的半导体元件的重要性不断增大。在这种GTO(栅极关断)晶闸管的大面积晶片上含有许多小面积的、平行连接的分立晶闸管,也可称为子片。
每一个这样的分立晶闸管包括:在阴极侧由连接的栅极区域环绕的指条状阴极,它或者本身凸出栅极区域的平面,或者为平面结构,并且在某些区域内设置凸起的阴极金属化。因此在阴极侧形成台阶状的、精细分开的结构,而在半导体晶片的阳极侧通常是不被精细分开的平面结构。
在GTO的阴极侧上,精细的机械敏感结构使得在接触或者安装这种元件时容易出现一些问题,这些问题的原因尤其在于压在半导体晶片上阳极侧和阴极侧的局部压力分布不同。
在前述的公开文件中,为解决上述问题,提出一种所谓的“直接”接触,即:在具有GTO有源部分的半导体晶片上设置金属化,并且在安装时,用足够高的压力将其压在两个大面积的、具有低的热膨胀系数的金属盘之间,(例如,Mo或W)。在这种情况下,压在总元件面积的压力可达10MPa的数量级。
如前所述,由于在阴极侧有许多小面积的子片,而在阳极侧为连续的大面积,所以,阳极面积AA与阴极面积AK的典型比例为:
AA/AK=2……10
由于几何图形的原因,(例如,圆形栅接触,称为环栅),对于电流特别大的GTO,这种面积比也特别大。根据半导体晶片的厚度,在阳极侧的局部压力分布是难以确定的(关于这点,参看图2曲线A1),而在阴极侧的局部压力分布(参看图2曲线K)显然是确定的,并且极限定在单个子片的狭窄范围内。
由于这个比例,使得阴极侧过大的压力(往往是在整个表面,至少是局部超过阴极金属化的屈服点)被阴极侧相对低的平均压力所束缚。这将在阴极侧导致不希望有的金属层形变,从而引起元件的早期失效(限制交流负载阻值)。另一方面,如果为了避免这种形变而降低压力,则不能确保阳极侧接触良好,因此,接触不良处就产生不希望有的电压降。
因此,本发明的一个目的是提供具有直接压力接触的可关断的新型半导体元件,由于改进了压力分布,显著地增加了维护的方便性和工作的可靠性,并且对于外部施加压力所容许的范围也增加了。
这个目的可以由上述类型的元件来达到,其中:
(f)阳极金属化具有精细分开的结构,使得阳极氧化也在有限局部区域内被压到阳极金属化上,以及
(g)被阳极接触所压的区域设置在被阴极接触所压的区域的对面。
本发明的实质是使阳极侧的金属化层结构与阴极侧的金属化层结构相匹配,以使其与常规元件相反,获得近似对称的局部压力分布。
然而,就本发明的一般情况而论,半导体晶片的阴极侧可以是平的(例如,参见德国公开说明书3,616,233)或是台阶结构,根据本发明的第一优选实施例,该元件的特征是:
(a)栅-阴结构是一种由凸起的指条状阴极和低位的栅极区域构成的台阶结构,以及
(b)在任何情况下,被阴极接触所压的区域都安排在指条状阴极之上。
本发明另一优选实施例的元件特征是:
(a)半导体晶片的阳极侧上具有一平整的表面,以及
(b)通过阳极金属化的不同厚度实现阳极金属化的精细分开结构。
在这个实施例中,阳极侧的结构只限于阳极金属化,而半导体晶片本身不必改变。
本发明的第三优选实施例的元件特征是:
(a)在半导体晶片的阳极侧上具有台阶结构的表面;
(b)阳极侧的台阶结构最终与台阶状的栅-阴结构相对应;
(c)阳极金属化覆盖整个半导体晶片的表面。
如果为了构成原始存在于整个表面、以形成阳极发射极的P型层,用刻蚀的方法在任何情况下除去不需要的部分,则这个实施例就与工艺过程的优点相关连了。
本发明的另一些实施例由从属权利要求结出。
下面借助于附图,并参照详细介绍,将会得到对发明及其附带的许多优点的更正确、更完整的理解,其中,假定元件具有台阶状的栅-阴结构,并没有限制其普遍性。
图1示出一种现有技术中具有直接压力接触的GTO晶闸管的结构图;
图2为公知元件中阴极侧晶闸管子片和阳极侧的局部压力分布与本发明中元件的局部压力分布的比例图;
图3A、3B是根据本发明的第一优选实施例的元件的子片结构图,3A中无阳极短路,3B中有阳极短路;
图4A、4B是根据本发明的第二优选实施例的元件的子片结构图,4A中无阳极短路,3B中有阳极短路;
图5A为根据本发明具有局部有限的金属化区域的元件的实施例;
图5B为根据图5A、在整个表面上覆盖附加金属化层的实施例;
图6是根据本发明的另一个实施例,在其栅极接触区内阳极金属化的结构图。
现在参照附图,图中相同的标号表示几个视图中相同的或相对应的部分,图1示出已有技术中具有台阶栅-阴结构的直接压力接触可关断半导体元件的结构图。这种布置的中心结构部分是一片大面积的半导体晶片,该晶片包括GTO有源部分。
在半导体晶片2的底侧(阳极侧)上具有一大面积的阳极金属化层4。在其上侧(阴极侧)上具有一台阶状的栅-阴结构,其中,许多凸起的指条状阴极7被低位的栅极区所包围。在栅极区域上安置了相应的栅极金属化5,图中未示出的栅极接触5与栅极金属化5相接触。
在它们之上的每个阴极指条上承载一阴极金属化6,阴极金属化6的特性(厚度、材料)与阳极金属化4相同。最后,为了绝缘的目的,在栅极区域再设置一绝缘层8,并且在半导体晶片2的边缘设置一边缘钝化9。
在阳极金属接触和阴极金属接触之间对半导体晶片施加一压力P,在这种情况下,压力分布本身遍布许多小的压力面积,即遍布在各个阴极指条7之上的阴极金属化6上,压力分布在这些小面积上基本上是常数。所以,晶闸管子片的阴极侧的压力分布具有图2中曲线K的形式。
在已有技术中,这种在阴极侧的近似矩形的压力分布是由一阳极侧的局部压力分布所对应的,这种阳极侧的局部压力没有被限制在窄的范围内,而且有一个明显低的最大值(见图2曲线A1)。同时,这意味着,在指条状阴极7的小面积上、为了提供可靠的(热和电)接触所必须的危险的高局部压力与阳极侧相对低的平均压力相对应。
为了消除这种非对称性,本发明提出一种基本上对称的局部压力分布,按照这个分布,阳极侧存在一个近似与阴极侧相同的矩形曲线,(图2中曲线A2。按照与阴极侧的台阶状栅一阴结构相同的方式来构成阳极金属化4,从而实现这种对称的压力分布。
在第一优选实施例中(图3A,3B),阳极金属化4的结构是直接靠金属化的厚度实现的。在这种情况下,具有不同掺杂层(n型发射极层2a,P型基极层2b,n型基极层2c以及P型发射极层2d)的半导体晶片2的阳极侧具有一个平整的表面,其整个表面被阳极金属化层4所覆盖。
在减少阳极金属化4上由指条状阴极所确定的区域之外的区域的厚度的同时,加厚每一子片内部的厚度,从而形成凸台11,这个凸台11在形状上和尺寸上必须与设置在相反一侧的阴极金属化对应,并且与阴极金属化对称布置。
具有局部凸台11的阳极金属化4,对于有或无阳极短路10(图3B或3A)的元件均适用。这可用常规的方法,通过光刻被淀积的金属层结构来实现。原则上,任何适用于直接接触的金属均可作为该金属层。最好是由蒸发或溅射法淀积的A1。
阳极金属化的厚度在1μm到30μm之间,最好在5μm至15μm之间。为了得到与图2中曲线K和A2相一致的所要求的压力分布,就需要有至少为1μm的高度差δh(图3A),这里因为该值大致上对应于受压时可能发生的弹性形变,这个高度差可以由例如局部腐蚀金属化层来制作。
在第二优选实施例中(图4A、4B),着眼点不是半导体晶片2阳极侧的平整表面,而是其结构基本上对应于阴极侧的栅-阴结构的阶梯表面(图4),为此,形状和尺寸大致对应于阴极侧的栅极区域的凹槽12被腐触到半导体晶片2上。
在这种情况下,阳极金属化4在整个表面上形成厚度均匀的金属层,结果,在凹槽之外形成可与图3A和3B的凸台11相比的凸台。
在图4A所示的实例中,没有设置阳极短路,另一方面,如果有阳路短路10(图4B),则在设置短路的地方安置凹槽12。对于图4B所示的情况,当将中央阳极短路10直接安置在阴极指条7底下时,阳极侧的承压面积将按照位于下方的P型发射极层2d的大小和范围被分割。
这一点将从图5所示的另一实施例中得到更清楚的了解,其中,虽然半导体晶片的阳极侧是平坦的,但是却用分立的,局部有限的金属化区域41、42取代了一金属层覆盖具有适当设置的凸台的整个表面的结构。
存在阳极短路10时,金属化区域41、42必须覆盖住P型发射极层2d,并且还与阳极短路10有重叠,以确保其功能完善。按照图5B,在整个表面上附加一层金属化43,也有同样的作用。另外,该附加金属层43还能改善阳极的散热性能。
然而,根据本发明,平衡的压力分布不是仅限于分立子片的区域或者指条状阴极,而是同样可以用于栅极区域,不管是中心栅或环形栅均可。两种情况的栅极接触13均压在阴极侧的栅金属化5之上。然后,在栅极接触13对面的阳极金属化层4上设置一凸台14,该凸台的大小和范围与被栅极接触13所压区域的面积必须相当。在环形栅的情况下,环形栅具有一个喇叭口形的栅极接触13和环行宽度b1,则凸台14也有一个喇叭形状和与环形宽度b1大体上相等的环行宽度b2。
如前所述,本发明不限制于具有台阶状栅-阴结构的元件,也以同样的方式适用于在半导体晶片的阳极侧为平面的元件,正在上述德国公开说明书3,616,233中所披露的。
总之,根据本发明,使阳极侧的金属化结构与阴极侧的栅-阴结构相匹配,可以获得功能可靠,使用寿命长的元件。
显然,根据上面的教导,本发明可以做出多种改型和变化,所以应理解上述指教。应该理解,在权利要求的范围内,除本文逐一介绍过的以外,也可实施本发明。
标号表
1 阴极接触 b1·2宽度
2 半导体晶片
2a n型发射极层
2b P型基极层
2c n型基极层
2d P型发射极层
3 阳极接触
4 阳极金属化
41、42、金属化区
43 金属化层
5 栅极金属化
6 阴极金属化
7 指条状阴极
8 绝缘层
9 边缘钝化
10 阳极短路
11、14、凸台
12 凹槽
13 栅极接触
P 压力
K 阴极压力分布
A1.2阳极压力分布
δh 高度差
Claims (12)
1、一种可关断的半导体元件,它包括:
(a)含有不同掺杂层(2a-2d)的半导体晶片(2),这些层被安排在阳极和阴极之间,并由它们形成由栅关断的栅关断晶闸管(GTO);
(b)在半导体晶片(2)的阴极侧上的精细分开的栅一限结构,该结构的许多类似岛状的指条状阴极(7)被栅极区所环绕。
(c)指条状阴极(7)上的阴极金属化;
(d)半导体晶片(2)的阳极侧的阳极金属化,以及
(e)阳极接触(3)和阴极接触(1),这两个接触分别被压到阳极金属化(4)上,或以许多局部有限的区域压到阴极金属化上,以实现接触,其特征在于:
(f)阳极金属化(4)具有精细分开的结构,使得阳极接触(3)也以许多局部有限的区域压到阳极金属化上;以及
(g)被阳极接触(3)所压的区域设置在被阴极接触(1)所压的区域的对面。
2、按照权利要求1的可关断半导体元件,其中:
(a)栅-阴阶结有凸出的指条状阴极(7)和低位栅极区的台阶结构,以及
(b)被阴极接触(7)所压的区域在任何情况下都被安排在指条状阴极(7)之上。
3、按照权利要求1的可关断半导体元件,其中:
(a)半导体晶片(2)的阳极侧上具有一平坦的表面,以及
(b)由阳极金属化(4)的不同厚度实现阳极金属化(4)的精细分开结构。
4、按照权利要求3的可关断半导体元件,其中:
(a)阳极金属化(4)覆盖半导体晶片(2)的阳极侧的整个表面;
(b)阳极金属化(4)具有一个凸台(11),该凸台在每一个与阴极指条(7)相对的区域中,其大小和形状上必须等于位于对面的阴极指条(7)。
5、按照权利要求3的可关断半导体元件,其中:
(a)阳极金属化(4)包括许多局部有限的金属化区域(41、42);以及
(b)金属化区域(41、42)在任何情况下都被安排在与阴极指条(7)相对的区域之上。
6、按照权利要求5的可关断半导体元件,其中:
(a)在阳极侧的半导体晶片(2)内,安置-P型发射极层(2d);
(b)P型发射极层(2d)被阳极短路(10)所隔断;以及
(c)金属化区域(41、42)必须覆盖P型发射极层(2d)。
7、按照权利要求5的可关断半导体元件,其中,阳极金属化(4)还包括一附加金属化层(43),它在半导体晶片(2)的阳极侧上覆盖住包括金属化区域(41、42)在内的整个表面。
8、按照权利要求2的可关断半导体元件,其中,
(a)在半导体晶片(2)的阳极侧上具有台阶结构的表面;
(b)阳极侧的台阶结构必须与台阶栅-阴结构相对应;以及
(c)阳极金属化(4)覆盖半导体片的整个表面。
9、按照权利要求2的可关断半导体元件,其中,
(a)在半导体晶片(2)阴极侧的栅极区域中设置一栅极金属化(5);
(b)在栅极金属化(5)上压栅极接触(13);以及
(c)在栅极接触(5)对面上的阳极金属化(4)上有一凸台(14),该凸台(14)在其范围上与被栅极接触(13)所压的区域必须相对应。
10、按照权利要求1的可关断半导体元件,其中
(a)阳极金属化(4)由铝构成,以及
(b)阳极金属化(4)的厚度在1μm至30μm之间。
11、按照权利要求10的可关断半导体元件,其中,阳极金属化的厚度在5μm至15μm之间。
12、按照权利要求1的可关断半导体元件,其中,由阳极接触(3)所压的区域与阳极侧没被压的区域之间存在一个至少为1μm的高度差。
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CH310588 | 1988-08-19 |
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CN89107592A Pending CN1041066A (zh) | 1988-08-19 | 1989-08-19 | 可关断的半导体元件 |
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US (2) | US5031016A (zh) |
EP (1) | EP0355359B1 (zh) |
JP (1) | JPH02229471A (zh) |
CN (1) | CN1041066A (zh) |
DE (1) | DE58903790D1 (zh) |
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JP2594278B2 (ja) * | 1986-07-30 | 1997-03-26 | ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト | 加圧接続型gtoサイリスタ |
EP0499707B1 (de) * | 1991-02-22 | 1996-04-03 | Asea Brown Boveri Ag | Abschaltbares Hochleistungs-Halbleiterbauelement |
FR2742000B1 (fr) * | 1995-11-30 | 1998-04-24 | Sgs Thomson Microelectronics | Composant semiconducteur a montage par brasure |
DE19640242C2 (de) * | 1996-09-30 | 2002-01-10 | Infineon Technologies Ag | Kathodenanordnung für GTO-Thyristor |
US7608515B2 (en) * | 2006-02-14 | 2009-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diffusion layer for stressed semiconductor devices |
DE102014103448B4 (de) * | 2013-03-15 | 2020-07-30 | Infineon Technologies Austria Ag | Metallabscheidung auf Halbleiterwafern |
US9177790B2 (en) | 2013-10-30 | 2015-11-03 | Infineon Technologies Austria Ag | Inkjet printing in a peripheral region of a substrate |
CN220474611U (zh) * | 2020-08-31 | 2024-02-09 | 日立能源有限公司 | 电子器件和用于其的封装和半导体芯片 |
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DE2747945A1 (de) * | 1976-11-01 | 1978-05-18 | Electric Power Res Inst | Thyristor-bauelement fuer eigenschutz |
JPS55113373A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device |
JPS5764969A (en) * | 1980-10-09 | 1982-04-20 | Hitachi Ltd | Semiconductor device |
JPS594033A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 圧接型半導体装置 |
JPH0779159B2 (ja) * | 1984-03-22 | 1995-08-23 | 潤一 西澤 | 光トリガ・光クエンチ可能なサイリスタ装置 |
JPS61208873A (ja) * | 1985-03-13 | 1986-09-17 | Res Dev Corp Of Japan | 圧接構造型両面ゲ−ト静電誘導サイリスタ |
DE3616233A1 (de) * | 1986-05-14 | 1987-11-19 | Semikron Elektronik Gmbh | Halbleiterbauelement |
JPH061831B2 (ja) * | 1986-07-08 | 1994-01-05 | 株式会社日立製作所 | ゲ−トタ−ンオフサイリスタ |
JP2594278B2 (ja) * | 1986-07-30 | 1997-03-26 | ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト | 加圧接続型gtoサイリスタ |
EP0262485A1 (de) * | 1986-10-01 | 1988-04-06 | BBC Brown Boveri AG | Halbleiterbauelement mit einer Ätzgrube |
-
1989
- 1989-07-08 EP EP19890112528 patent/EP0355359B1/de not_active Expired - Lifetime
- 1989-07-08 DE DE8989112528T patent/DE58903790D1/de not_active Expired - Fee Related
- 1989-08-10 US US07/392,158 patent/US5031016A/en not_active Expired - Fee Related
- 1989-08-18 JP JP1212871A patent/JPH02229471A/ja active Pending
- 1989-08-19 CN CN89107592A patent/CN1041066A/zh active Pending
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US5132768A (en) | 1992-07-21 |
US5031016A (en) | 1991-07-09 |
EP0355359A1 (de) | 1990-02-28 |
JPH02229471A (ja) | 1990-09-12 |
EP0355359B1 (de) | 1993-03-17 |
DE58903790D1 (de) | 1993-04-22 |
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