CN104094091B - Semiconductor light-emitting elements determinator and semiconductor light-emitting elements assay method - Google Patents
Semiconductor light-emitting elements determinator and semiconductor light-emitting elements assay method Download PDFInfo
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- CN104094091B CN104094091B CN201280068969.1A CN201280068969A CN104094091B CN 104094091 B CN104094091 B CN 104094091B CN 201280068969 A CN201280068969 A CN 201280068969A CN 104094091 B CN104094091 B CN 104094091B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000003556 assay Methods 0.000 title claims description 6
- 238000004020 luminiscence type Methods 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 2
- 238000009826 distribution Methods 0.000 description 37
- 239000000523 sample Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0266—Field-of-view determination; Aiming or pointing of a photometer; Adjusting alignment; Encoding angular position; Size of the measurement area; Position tracking; Photodetection involving different fields of view for a single detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0425—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using optical fibers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0218—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using optical fibers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0289—Field-of-view determination; Aiming or pointing of a spectrometer; Adjusting alignment; Encoding angular position; Size of measurement area; Position tracking
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J3/504—Goniometric colour measurements, for example measurements of metallic or flake based paints
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
- G01J2001/067—Restricting the angle of incident light for angle scan
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4247—Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources
- G01J2001/4252—Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources for testing LED's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Led Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The present invention provides wavelength and the semiconductor light-emitting elements determinator of luminous quantity of a kind of light that can simultaneously measure each angle.LED determinator (3) has the photodetector (105) of the light that reception LED (101) semiconductor light-emitting elements is launched, the distance change mechanism of distance between LED (101) and photodetector (105) can be changed, and wavelength or the determination part (120) of intensity of the light in a direction among the light that LED (101) is launched can be measured, wherein, even if changing the distance between LED (101) and photodetector (105) by distance change mechanism, determination part (120) also can receive the light of the outermost contour of the light that photodetector (105) is received.
Description
Technical field
The present invention relates to a kind of mensuration from the determinator of the light of the semiconductor light-emitting elements such as LED and its mensuration side
Method.
Background technology
Patent documentation 1 and Patent Document 2 discloses for measure with centre of luminescence axle angulation corresponding to light intensity
The i.e. distribution (luminous intensity distribution intensity distributions) of luminous intensity distribution intensity, and measure a local technology every time.
Additionally, Patent Document 3 discloses as measuring luminous intensity distribution intensity distributions, measure the technology in multiple place simultaneously.
Further, Patent Document 4 discloses the technology of the luminous total amount of mensuration.
Prior art literature
Patent documentation
[patent documentation 1] Japanese Patent Laid-Open flat 5-107107 publication
[patent documentation 2] Japanese Patent Laid-Open flat 8-114498 publication
[patent documentation 3] Japanese Patent Laid-Open 2005-172665 publication
[patent documentation 4] Japanese Patent Laid-Open 2008-76126 publication
Summary of the invention
The problem that invention is to be solved
In patent documentation 1 to patent documentation 4, the method for arbitrary record all can not measure the wavelength of the light of each angle simultaneously
Distribution and luminous quantity.
But, there is the wavelength (or light intensity) of the light simultaneously measuring each angle and the luminous quantity to this angle
Demand.
Means needed for solution problem
The present invention completes to solve the problems referred to above, and one of them purpose is to provide one to measure simultaneously
The wavelength of the light of each angle and the semiconductor light-emitting elements determinator of the luminous quantity to this angle and its measure
Method.
In order to solve the problems referred to above, the semiconductor light-emitting elements determinator of the present invention has: light accepting part, and it has and connects
Receive the sensitive surface of the light that semiconductor light-emitting elements is launched；And determination part, it has allows described semiconductor light-emitting elements launch
The plane of incidence that light is injected, and the wavelength of the light in a direction among the light that described semiconductor light-emitting elements is launched or strong can be measured
Degree, it is characterised in that described semiconductor light-emitting elements determinator also has distance change mechanism, this distance change mechanism energy
Enough change the distance between described semiconductor light-emitting elements and described light accepting part；Described determination part is moving to along with described distance
Change mechanism change described distance and by the centre of luminescence axle of the centre of luminescence of described semiconductor light-emitting elements be connected described in
Angle that the line of the peripheral end of semiconductor light-emitting elements and described sensitive surface is formed and described centre of luminescence axle be connected institute
Under the state stating the semiconductor light-emitting elements position identical with the angle that the line of described determination part is formed, it is measured.
Further, in order to solve the problems referred to above, the semiconductor light-emitting elements assay method of the present invention, wherein, have: light
Portion, it has the sensitive surface receiving the light that semiconductor light-emitting elements is launched；And determination part, it has allows described semiconductor light emitting
The plane of incidence that the light that element is launched is injected, and the light in a direction among the light that described semiconductor light-emitting elements is launched can be measured
Wavelength or intensity, it is characterised in that described semiconductor light-emitting elements also have distance change mechanism, this distance change mechanism energy
Enough change the distance between described semiconductor light-emitting elements and described light accepting part；Described determination part is moving to along with described distance
Change mechanism change described distance and by the centre of luminescence axle of the centre of luminescence of described semiconductor light-emitting elements be connected described in
Angle that the line of the peripheral end of semiconductor light-emitting elements and described sensitive surface is formed and described centre of luminescence axle be connected institute
Under the state stating the semiconductor light-emitting elements position identical with the angle that the line of described determination part is formed, it is measured.
Accompanying drawing explanation
Fig. 1 is the explanatory diagram of the lighting conditions of LED in embodiments of the present invention.
Fig. 2 is the explanatory diagram about luminous intensity distribution intensity distributions E.
Fig. 3 is for carrying out the explanatory diagram by optical module of the light-emitting component determinator of LED inspection in embodiment.
Fig. 4 is the schematic illustration of LED determinator 3.
Fig. 5 is the explanatory diagram of the assay method of luminous intensity distribution intensity E (θ) in present embodiment.
Fig. 6 is about the explanatory diagram of the angle of the plane of incidence when light guide section tilts himself.
Detailed description of the invention
Hereinafter, Fig. 1 is used to describe embodiments of the present invention in detail.
Fig. 1 is the explanatory diagram of the lighting conditions of LED in embodiments of the present invention.
As shown in Fig. 1 (a), LED (Light Emitting Diode) 101 is sent light by light-emitting area 1011.By this
The normal of the light-emitting area 1011 of LED101 is referred to as centre of luminescence axle LCA.Additionally, by the side in the plane comprising light-emitting area 1011
To during as reference axis (X-axis), the angle that the X-axis from this plane rotates counterclockwise is defined as φ.
It addition, in the case of φ is fixing, θ will be defined as with centre of luminescence axle LCA angulation.
The intensity of the light launched from the light-emitting area 1011 of LED101 can because of with centre of luminescence axle LCA angulation θ etc. and
Different (with reference to Fig. 2).
But, there are the needs of the lighting conditions measuring LED101.So-called lighting conditions refers to such as, luminous quantity, ripple
The situation etc. of the distribution (i.e. luminous intensity distribution intensity distributions) of long, light intensity.
Can determine whether that this LED101 is if appropriate for various uses by understanding this lighting conditions.
Further, when measuring the lighting conditions of LED101, need to measure as much as possible at a high speed.
The intensity of the light of LED101 can present different values on different θ and φ.
Thus, for the intensity with visual manner performance light, the figure such as Fig. 1 (b) is used to illustrate.
In Fig. 1 (b), X-axis represents with θ=0 ° with the intersection point part of Y-axis.
Further, each point on circle represents the position of each φ of θ=90 ° respectively.
Additionally, Fig. 1 (c) is the profile that value is fixing position of φ.
So, in FIG, by distance LED101 same distance and with on the position of centre of luminescence axle LCA angulation θ
The strength definition of light be luminous intensity distribution intensity E (θ).
Further, this luminous intensity distribution intensity E (θ) illustrated corresponding to each θ is luminous intensity distribution intensity distributions E.Divide as luminous intensity distribution intensity
The object lesson of cloth E will illustrate at Fig. 2.
Additionally, in the above description, it is assumed that the position the most remote in distance LED101 is measured, then LED101 can be regarded
For being a point.
If without recording especially in explanation later, all assume that LED101 is a point.This is because LED101 is with general
Photodetector 105 compare the most negligible, therefore can do such hypothesis.
Fig. 2 is the explanatory diagram about luminous intensity distribution intensity distributions E.
Fig. 2 (a) and Fig. 1 (c) is identical figure.
As shown in Fig. 2 (a), so-called luminous intensity distribution intensity distributions E is on the position that distance r of LED101 is fixing, is consolidating
The intensity of the light of each θ under fixed φ angle.
Additionally, LED101 typically has luminous intensity distribution intensity distributions E different because of LED101 because of the error etc. of its processing technology.
This different LED101 there may be cos type LED101 of Fig. 2 (b) and the ring-like LED101 of Fig. 2 (c).
Cos type and ring-like LED101 are only an example, and the non-limiting LED101 with these two kinds of characteristics is mensuration object.No
Crossing, general LED101 has the LED101 that crest is cos type of light and the ring of the crest of the intensity in θ=30 ° with light mostly
Characteristic between type LED101.It is to say, as checking that the general LED101 of object is in the range of 0 °～30 ° at θ mostly
There is the crest of light intensity.
Fig. 3 is for carrying out the saying by optical module 1 of the light-emitting component determinator 3 of LED101 inspection in embodiment
Bright figure.
More specifically, the luminous total amount till Fig. 3 is the predetermined angular that can simultaneously be measured to LED101 and this regulation
Wavelength (the device i.e. explanatory diagram by optical module 1 of determinator 3 of the intensity (luminous intensity distribution intensity E (θ)) of light of the light of angle.
Fig. 3 is used for obtaining data by optical module 1, and these data are for carrying out mensuration and the inspection of LED101.
Hereinafter, the structure by optical module 1 of explanatory diagram 3.
As it is shown on figure 3, in the present embodiment, by optical module 1, be there is plummer 102b (sample setting table), photodetection
Device 105, holding seat 107, holding wire 111, amplifier 113, order wire 115 and probe 109.
Additionally, be there is determination part 120 by optical module 1.
This determination part 120 has light guide section 117, optical fiber 119 and beam splitter 121.
Light guide section 117 has plane of incidence 117a, from the light of LED101 and makes light be injected in this plane of incidence 117a reception
The inside of light guide section 117.
The light injected from this plane of incidence 117a is guided in the direction parallel with the length direction of light guide section 117.Additionally,
Method to the length direction direct light of light guide section 117 will illustrate in figure 6.
The light that this light guide section 117 is guided by optical fiber 119 guides to beam splitter 121.
In the intensity of light or the wavelength of light one is at least measured by beam splitter 121.
It addition, all these structures are not by the necessary structure of optical module 1, as long as at least having photodetector 105
With light guide section 117.
Multiple LED101 are configured on horizontally disposed plummer 102b.
Maintaining part 107 is configured at the position relative with plummer 102b at spaced intervals.
It is configured with photodetector 105 in the inside of maintaining part 107.
LED101, plummer 102b and photodetector 105 configure in parallel to each other.
Probe 109 when light situation measures and electrical characteristic measures with the electrode contact of LED101, and apply voltages to
On LED101.
Can when plummer 102b and LED101 is fixing traveling probe 109, make probe 109 connect with LED101
Touch.In contrast, it is also possible to mobile plummer 102b and LED101 when probe 109 is fixing, make probe 109 with
LED101 contacts.
Additionally, probe 109 is connected with electrical characteristic measurement unit 125.
Probe 109 is almost parallel with the light-emitting area 1011 of LED101, puts on the direction at a right angle with the normal of LED101
Extend with penetrating shape.
Maintaining part 107 has side surface part 107b of cylindrical shape.
Side surface part 107b has cylindrical shape, has the shape of the direction extension along θ=0 °.
The center of occlusion part 107a and side surface part 107b has the direction of θ=0 °, with sending out of the light-emitting area 1011 of LED101
Light center axle is identical.
Photodetector 105 it is configured with in the hollow space that the inner peripheral surface of side surface part 107b is formed.
Being formed with circular open portion 107c in the central part of occlusion part 107a, this circular open portion 107c is formed with cylinder
The hollow bulb of shape.Due to the existence of this circular open portion 107c, therefore photodetector 105 can receive from LED101 transmitting
Light.
The diaphragm 102c being configured on plummer 102b is equipped with multiple LED101.
Additionally, in the present embodiment, this diaphragm 102c configures the purpose of multiple LED101 be at a high speed (simultaneously) and
Obtain the wavelength (intensity) of the luminous total amount till predetermined angular and the light at this predetermined angular accurately.
Photodetector 105 (maintaining part 107) can move toward the direction G close to LED101 and the direction F away from LED101
Dynamic.
But it is also possible to not moving photoconductor detector 105 and mobile LED101 (plummer 102b).
Move this photodetector 105 or LED101 and change the machine of the distance between photodetector 105 and LED101
Structure is referred to as distance change mechanism.
The plane of incidence 117a of light guide section 117 keeps equidistance by maintaining part with the LED101 measuring object.
Additionally, this maintaining part rotatable holding light guide section 117.
Specifically, maintaining part can make light guide section 117 move toward side, θ=90 ° to A, it is possible to make light guide section 117 toward θ=
0 ° of side is moved to B.
It addition, maintaining part can make light guide section 117 rotate in C direction along clockwise direction, it is possible to make light guide section 117 along counterclockwise
Direction D rotates.
This maintaining part although not shown, but as long as be can make plane of incidence 117a with measure object LED101 keep equidistance
And keep the mechanism of plane of incidence 117a revolvably.
Additionally, in figure 3, the outermost contour L of the light that light guide section 117 is configured at from photodetector 105 is received is different
Position on, but as mentioned below, it is preferred that light guide section 117 is configured on outermost contour L.
As it is shown on figure 3, be configured with multiple LED101 on diaphragm 102c.In the so configured situation having multiple LED101
Under, may require that high-speed and continuous measures the plurality of LED101 as much as possible.
In the present embodiment, except the movement of photodetector 105, also by movement, rotate light guide section 117, thus
Wavelength (intensity (luminous intensity distribution intensity E of light of the light of the luminous total amount till predetermined angular and predetermined angular can be measured simultaneously
(θ))。
Therefore, every mensuration of LED101 can be carried out continuously and at high speed.
Fig. 4 is the schematic illustration of LED101 determinator 3.
The determinator 3 of LED101 in addition to by optical module 1, also have electrical characteristic measurement unit 125, storage part 161,
Output unit 163 and operational part 151.
Additionally, by optical module 1 have in the present embodiment plummer 102b (sample setting table), photodetector 105,
Keep seat 107, holding wire 111, amplifier 113, order wire 115, optical fiber 119 and beam splitter 121.
But, all these structures are not the necessary structure of determinator 3 of LED101, as long as at least having light electrical resistivity survey
Survey device 105, optical fiber 119 and beam splitter 121.
Electrical characteristic measurement unit 125 has HV unit 153, ESD unit 155, switch unit 157 and positioning unit 159.
Photodetector 105 receives the light launched from LED101.
Further, the electric signal (light summation of the whole intensity according to the received light of photodetector 105 exported
Light amount information) as analogue signal, export to amplifier 113.
The light light amount information utilizing this photodetector 105 to be exported can calculate luminous intensity distribution intensity distributions.
Amplifier 113 amplifies this light light amount information and is converted into the detectable voltage of operational part 151 described later
Value.
Additionally, optical fiber 119 is connected to beam splitter 121, this beam splitter 121 can measure the wavelength of directed light and the strong of light
Degree (luminous intensity distribution intensity E (θ)).
And, beam splitter 121 exports wavelength and the information of luminous intensity distribution intensity E (θ) of light to operational part 151.
Probe 109 has the surface of brought into physical contact LED101 and applies the function for making voltage luminous for LED101.
It addition, probe 109 is positioned and fixed by positioning unit 159.
If plummer 102b is the object of mobile form, then this positioning unit 159 has the apical position guarantor of probe 109
Hold the function in fixed position.On the contrary, if probe 109 is the object of mobile form, then this positioning unit 159 has and makes probe
The apical position of 109 moves the assigned position to the plummer 102b of carrying LED101 and is maintained at the function of this position.
HV unit 153 has applying rated voltage and detects the LED101 various characteristics relative to this rated voltage
Effect.
Generally, when being applied with the voltage from this HV unit 153, LED101 is sent by photodetector 105
Light be measured.
The various characteristic informations that HV unit 153 detects export to operational part 151.
ESD unit 155 is for for applying in a flash high voltage to LED101 so that it is static discharge, and whether carries out it
Suffer the unit of the inspections such as electrostatic breakdown.
The electrostatic breakdown information that ESD unit 155 detects exports to operational part 151.
Switch unit 157 carries out the switching between HV unit 153 and ESD unit 155.
That is, by this switch unit 157, change and apply the voltage to LED101 via probe 109.And, change according to this
Becoming, the inspection project of LED101 is changed to detect the various characteristics in rated voltage respectively, or has detected whether to suffer electrostatic
Destroy.
Operational part 151 receive exported by amplifier 113 voltage, from the wavelength of light of beam splitter 121 and luminous intensity distribution intensity
Information, the various electrical characteristic information detected by HV unit 153 and the letter of the electrostatic breakdown detected by ESD unit 155
The input of breath.
Further, the characteristic of LED101 is analyzed and classifies according to these inputs by operational part 151.
Fig. 5 is the explanatory diagram of the assay method of luminous intensity distribution intensity E (θ) in present embodiment.
As shown in Fig. 5 (a), it is LA by the distance definition between photodetector 105 and LED101, and in the position of θ=θ C
Put wavelength and luminous intensity distribution intensity E (θ C) measuring light.
Further, Fig. 5 (b) represents by making photodetector 105 move to LED101 side apart from change mechanism.
In this case, it is LB by the distance definition between photodetector 105 and LED101, and in the position of θ=θ D
Put wavelength and luminous intensity distribution intensity E (θ D) measuring light.
Additionally, regardless of the distance of photodetector 105, maintaining part keep light guide section 117 so that plane of incidence 117a with
Distance between LED101 is fixed.
Here, keep fixing reason to illustrate the distance between the plane of incidence 117a and LED101.Owing to luminous intensity distribution is strong
Degree E (θ) is the intensity of the light on the point of LED101 same distance, it is therefore necessary to measuring light at LED101 same distance
Intensity.But, as long as the distance between the energy corrected range plane of incidence to be made 117a and LED101 is fixed.
The light of photodetector 105 is not produced on the position of impact additionally, maintaining part makes light guide section 117 be maintained at.
Specifically, in Fig. 5 (a) mobile light guide section 117 so that θ C=θ A.In Fig. 5 (b) mobile light guide section 117 with
Make θ D=θ B.
That is, light guide section 117 is made to move the position to outermost contour L.
In this case, luminous quantity can be measured measure the wavelength of light at this θ A or θ B (or light is strong
Degree).
Although it addition, suspecting whether the existence of light guide section 117 can produce bad shadow to the measurement result of photodetector 105
Ring and produce query, relatively thin, the most hardly to photodetector 105 yet with light guide section 117 (particularly top)
Light produces impact.
Additionally, light guide section 117 also rotates with maintaining part.To illustrate with Fig. 6 for the concrete anglec of rotation.
Fig. 6 is about the explanatory diagram of the angle of plane of incidence 117a when light guide section 117 tilts himself.
Shown in Fig. 6 is the light guide section 117 situation relative to level cant angle theta 4.
In this case, for making the light being incident upon plane of incidence 117a at the bearing of trend (light conducting direction) of light guide section 117
Upper advance, then must be fulfilled for following numerical expression:
Sin (90 ° of-θ 3+ θ 2-θ 4)=nsin (θ 2).
Here, n is the light guide section 117 relative index of refraction relative to air.
As long as selecting to meet the i.e. θ of angle 2 of plane of incidence 117a of this numerical expression, the plane of incidence 117a method relative to LED101
The i.e. θ of angle 4 that the i.e. θ of the angle of line 3 and light guide section 117 tilt relative to level, then the light guided by light guide section 117 can
The bearing of trend of light guide section 117 is propagated as the crow flies.
Further, the light by being guided by light guide section 117 guides as the crow flies such that it is able to reliably guide incident illumination to dividing
Light device 121.
It is, the wavelength (intensity) of light that launch from LED101, at θ 3 can be measured with higher precision.
Grind it is preferred that plane of incidence 117a to be carried out APC (Angle Physical Contact).
Here, so-called APC grinding is the Ginding process of a kind of abradant surface implementing oblique convex spherical shape.Ground by this APC
Mill can the decay of inhibitory reflex.
<structure of embodiment and effect thereof>
LED101 determinator 3 has the photodetector receiving the light that LED101 semiconductor light-emitting elements is launched
105, the distance change mechanism of the distance between LED101 and photodetector 105 can be changed and LED101 can be measured sent out
The wavelength of the light in the direction among the light penetrated or the determination part 120 of intensity.
Even if changing the distance between LED101 and photodetector 105 by distance change mechanism, determination part 120 is also
The light of the outermost contour of the light that photodetector 105 is received can be received.
Owing to having a structure in which, therefore can measure the wavelength of the light of each angle and sending out to this angle position simultaneously
Light quantity.
Determination part 120 has plane of incidence 117a, and the light that LED101 is launched injects this plane of incidence 117a.Even if passing through distance
Change mechanism and change the distance between LED101 and photodetector 105, determination part 120 also can make LED101 and the plane of incidence
Distance between 117a does not changes.Plane of incidence 117a is along with being changed LED101 and photodetector by distance change mechanism
Distance between 105 and rotate.
Owing to having a structure in which, the wavelength of the light of each angle can be measured more reliably.
Determination part 120 can move centered by LED101 equidistantly.
Owing to having a structure in which, intensity i.e. luminous intensity distribution intensity E of the light of equidistance therefore can be readily derived
(θ)。
Determination part 120, along being inducted into the direction of the light being incident upon plane of incidence 117a, rotates to make the angle of refracting light incident.
Owing to having a structure in which, therefore determination part 120 can measure the intensity of light with higher precision (luminous intensity distribution is strong
Degree E (θ)) and/or the wavelength of light.
Determination part 120 is configured at outside the scope of the light that photodetector 105 is received.
Owing to having a structure in which, therefore determination part 120 can be measured without carrying out photodetector 105
Mensuration produce impact.
LED101 is the LED101 in wafer-shaped.
Owing to having a structure in which, therefore can at a high speed and be measured continuously.
<definition etc.>
Distance change mechanism in the present invention can be to photodetector 105 side shifting, it is also possible to LED101 side shifting.
Additionally, the photodetector 105 in embodiment is an example of light accepting part in the present invention.That is, being subject in the present invention
As long as light portion can measure the mechanism of the intensity of light.
It addition, LED101 is an example of the semiconductor light-emitting elements in the present invention.That is, so-called semiconductor light-emitting elements is only
If the element of luminescence.Here, light is not limited to visible ray, for example, it is also possible to be infrared ray, ultraviolet etc..
Centre of luminescence axle LCA in the present invention refers to become the axle at the center of light when semiconductor light-emitting elements luminescence.
One example of the operational part in the present invention is the operational part 151 in embodiment.
Symbol description
1 by optical module
3 determinators
101 LED (semiconductor light-emitting elements)
102b plummer
105 photodetectors (light accepting part)
151 operational parts
Claims (7)
1. a semiconductor light-emitting elements determinator, it has:
Light accepting part, it has the sensitive surface receiving the light that semiconductor light-emitting elements is launched；And
Determination part, it has the plane of incidence that the light allowing described semiconductor light-emitting elements launch is injected, and can measure described half
The wavelength of light in a direction or intensity among the light that conductor light-emitting component is launched,
It is characterized in that,
Described semiconductor light-emitting elements determinator also has distance change mechanism, and this distance change mechanism can change described
Distance between semiconductor light-emitting elements and described light accepting part；
Described determination part passes through described semiconductor light emitting element mobile to along with the described distance change mechanism described distance of change
The line institute of the centre of luminescence axle of the centre of luminescence of part and the peripheral end being connected described semiconductor light-emitting elements and described sensitive surface
The angle that the angle formed and described centre of luminescence axle are formed with the line being connected described semiconductor light-emitting elements and described determination part
Under the state spending identical position, it is measured.
Semiconductor light-emitting elements determinator the most according to claim 1, it is characterised in that
Described determination part mobile to along with described distance change mechanism change described distance and described semiconductor light-emitting elements with
It is measured under the state of the position that distance between described determination part is constant.
Semiconductor light-emitting elements determinator the most according to claim 1 and 2, it is characterised in that
Described determination part can move centered by described semiconductor light-emitting elements equidistantly.
Semiconductor light-emitting elements determinator the most according to claim 3, it is characterised in that
Described determination part has the plane of incidence that the light allowing described semiconductor light-emitting elements launch is injected,
Described determination part edge is inducted into the direction of the light being incident upon the described plane of incidence, rotates to make the angle of refracting light incident.
Semiconductor light-emitting elements determinator the most according to claim 1 and 2, it is characterised in that
Described determination part is configured at outside the scope of the light that described light accepting part is received.
Semiconductor light-emitting elements determinator the most according to claim 1 and 2, it is characterised in that
Described semiconductor light-emitting elements is the LED in wafer-shaped.
7. a semiconductor light-emitting elements assay method, wherein, described semiconductor light-emitting elements has:
Light accepting part, it has the sensitive surface receiving the light that semiconductor light-emitting elements is launched；And
Determination part, it has the plane of incidence that the light allowing described semiconductor light-emitting elements launch is injected, and can measure described half
The wavelength of light in a direction or intensity among the light that conductor light-emitting component is launched,
It is characterized in that,
Described semiconductor light-emitting elements also has distance change mechanism, and this distance change mechanism can change described semiconductor light emitting
Distance between element and described light accepting part；
Described determination part passes through described semiconductor light emitting element mobile to along with the described distance change mechanism described distance of change
The line institute of the centre of luminescence axle of the centre of luminescence of part and the peripheral end being connected described semiconductor light-emitting elements and described sensitive surface
The angle that the angle formed and described centre of luminescence axle are formed with the line being connected described semiconductor light-emitting elements and described determination part
Under the state spending identical position, it is measured.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2012/057987 WO2013145132A1 (en) | 2012-03-27 | 2012-03-27 | Measuring apparatus for semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104094091A CN104094091A (en) | 2014-10-08 |
| CN104094091B true CN104094091B (en) | 2016-08-24 |
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|---|---|---|---|
| CN201280068969.1A Expired - Fee Related CN104094091B (en) | 2012-03-27 | 2012-03-27 | Semiconductor light-emitting elements determinator and semiconductor light-emitting elements assay method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5813861B2 (en) |
| CN (1) | CN104094091B (en) |
| WO (1) | WO2013145132A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1871689A (en) * | 2003-10-28 | 2006-11-29 | 株式会社尼康 | Projection exposure apparatus, exposure method, and element producing method |
| CN101276154A (en) * | 2007-03-30 | 2008-10-01 | Asml荷兰有限公司 | Lithographic apparatus and method |
| CN101320216A (en) * | 2008-06-18 | 2008-12-10 | 上海微电子装备有限公司 | Reshaping structure of micro-photoetching illumination iris |
| JP4892118B1 (en) * | 2010-11-30 | 2012-03-07 | パイオニア株式会社 | Light receiving module for light emitting element and inspection device for light emitting element |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62211538A (en) * | 1986-03-12 | 1987-09-17 | Oki Electric Ind Co Ltd | Measuring method for light emission characteristic of semiconductor light emitting element |
| JPH05107107A (en) * | 1991-10-16 | 1993-04-27 | Omron Corp | Inspecting device of light-emitting element |
| JP3628344B2 (en) * | 1993-12-28 | 2005-03-09 | 株式会社リコー | Semiconductor inspection equipment |
| JPH09113411A (en) * | 1995-10-17 | 1997-05-02 | Hitachi Cable Ltd | Light-receiving apparatus |
| JP4061822B2 (en) * | 2000-06-26 | 2008-03-19 | 松下電工株式会社 | Infrared module characteristics measurement method |
| JP3778362B2 (en) * | 2004-03-29 | 2006-05-24 | 株式会社テクノローグ | LED light emission measuring device |
| JP2007019237A (en) * | 2005-07-07 | 2007-01-25 | Tokyo Seimitsu Co Ltd | Probing device for double-sided light emitting element |
| JP2008180661A (en) * | 2007-01-26 | 2008-08-07 | Shin Etsu Handotai Co Ltd | Apparatus and method for inspecting electronic device |
| US8064058B2 (en) * | 2007-07-18 | 2011-11-22 | GE Lighting Solutions, LLC | Light distribution measurement system |
| JP2010091441A (en) * | 2008-10-09 | 2010-04-22 | Arkray Inc | Light quantity monitoring apparatus and light quantity monitoring method |
-
2012
- 2012-03-27 CN CN201280068969.1A patent/CN104094091B/en not_active Expired - Fee Related
- 2012-03-27 WO PCT/JP2012/057987 patent/WO2013145132A1/en active Application Filing
- 2012-03-27 JP JP2014507101A patent/JP5813861B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1871689A (en) * | 2003-10-28 | 2006-11-29 | 株式会社尼康 | Projection exposure apparatus, exposure method, and element producing method |
| CN101276154A (en) * | 2007-03-30 | 2008-10-01 | Asml荷兰有限公司 | Lithographic apparatus and method |
| CN101320216A (en) * | 2008-06-18 | 2008-12-10 | 上海微电子装备有限公司 | Reshaping structure of micro-photoetching illumination iris |
| JP4892118B1 (en) * | 2010-11-30 | 2012-03-07 | パイオニア株式会社 | Light receiving module for light emitting element and inspection device for light emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104094091A (en) | 2014-10-08 |
| WO2013145132A1 (en) | 2013-10-03 |
| JPWO2013145132A1 (en) | 2015-08-03 |
| JP5813861B2 (en) | 2015-11-17 |
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