CN104067513B - 具有可调谐负载匹配的多模旁路激励放大器 - Google Patents

具有可调谐负载匹配的多模旁路激励放大器 Download PDF

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Publication number
CN104067513B
CN104067513B CN201380006463.2A CN201380006463A CN104067513B CN 104067513 B CN104067513 B CN 104067513B CN 201380006463 A CN201380006463 A CN 201380006463A CN 104067513 B CN104067513 B CN 104067513B
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CN
China
Prior art keywords
matching circuit
impedance matching
tunable
driver amplifier
amplifier
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Expired - Fee Related
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CN201380006463.2A
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English (en)
Chinese (zh)
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CN104067513A (zh
Inventor
Y·赵
N·M·普莱彻
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/213—A variable capacitor being added in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/378—A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21136—An input signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21175—An output signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7233—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier, switched on or off by putting into parallel or not, by choosing between amplifiers by one or more switch(es), being impedance adapted by switching an adapted passive network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
CN201380006463.2A 2012-01-23 2013-01-23 具有可调谐负载匹配的多模旁路激励放大器 Expired - Fee Related CN104067513B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/356,492 2012-01-23
US13/356,492 US8666338B2 (en) 2012-01-23 2012-01-23 Multi-mode bypass driver amplifier with tunable load matching
PCT/US2013/022806 WO2013112631A1 (en) 2012-01-23 2013-01-23 Multi-mode bypass driver amplifier with tunable load matching

Publications (2)

Publication Number Publication Date
CN104067513A CN104067513A (zh) 2014-09-24
CN104067513B true CN104067513B (zh) 2016-11-02

Family

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Family Applications (1)

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CN201380006463.2A Expired - Fee Related CN104067513B (zh) 2012-01-23 2013-01-23 具有可调谐负载匹配的多模旁路激励放大器

Country Status (7)

Country Link
US (1) US8666338B2 (enExample)
EP (1) EP2807744B1 (enExample)
JP (1) JP5739075B2 (enExample)
KR (1) KR101547602B1 (enExample)
CN (1) CN104067513B (enExample)
IN (1) IN2014CN04462A (enExample)
WO (1) WO2013112631A1 (enExample)

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US9231536B2 (en) * 2011-07-24 2016-01-05 Ethertronics, Inc. Multi-mode multi-band self-realigning power amplifier
JP2014064148A (ja) * 2012-09-20 2014-04-10 Sharp Corp 無線回路および無線回路の制御方法
US9130535B2 (en) 2012-12-20 2015-09-08 Qualcomm Incorporated Driver amplifier with asymmetrical T-coil matching network
US10615949B2 (en) 2014-02-14 2020-04-07 University Of Southern California Hybrid-based cancellation in presence of antenna mismatch
US9425746B2 (en) 2014-03-28 2016-08-23 Qualcomm Incorporated Spurious signal mitigation for carrier aggregation amplifier
US10171039B2 (en) * 2015-08-31 2019-01-01 Infineon Technologies Ag Devices and methods that facilitate power amplifier off state performance
US10476530B2 (en) 2015-10-12 2019-11-12 Qorvo Us, Inc. Hybrid-coupler-based radio frequency multiplexers
US11201595B2 (en) * 2015-11-24 2021-12-14 Skyworks Solutions, Inc. Cascode power amplifier with switchable output matching network
US9954267B2 (en) * 2015-12-28 2018-04-24 Qualcomm Incorporated Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter
US10050591B2 (en) * 2016-03-23 2018-08-14 Cree, Inc. LC network for a power amplifier with selectable impedance
US10177723B2 (en) * 2016-08-30 2019-01-08 Qualcomm Incorporated Reconfigurable power amplifier
US10855246B2 (en) * 2016-09-21 2020-12-01 Qorvo Us, Inc. Enhancing isolation in hybrid-based radio frequency duplexers and multiplexers
TWI652913B (zh) * 2016-10-28 2019-03-01 絡達科技股份有限公司 多模多頻之收發器、射頻前端電路及應用其之射頻系統
JP2018181943A (ja) 2017-04-05 2018-11-15 株式会社村田製作所 電力増幅モジュール
CN106998193B (zh) * 2017-04-06 2020-12-22 上海航天测控通信研究所 S频段中继功放滤波器集成结构
US10772052B2 (en) * 2017-06-16 2020-09-08 Qualcomm Incorporated Controlling coexistent radio systems in a wireless device
US10411659B2 (en) * 2018-01-25 2019-09-10 Cree, Inc. RF power amplifier with frequency selective impedance matching network
US11201596B2 (en) * 2018-01-30 2021-12-14 Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi Power amplifier system
EP3716493B1 (en) * 2019-03-29 2021-11-10 Nokia Solutions and Networks Oy Full duplex transmission arrangement
JP2021044713A (ja) 2019-09-11 2021-03-18 株式会社村田製作所 電力増幅回路
KR102188036B1 (ko) * 2020-05-11 2020-12-07 국방과학연구소 듀플렉서가 통합된 저잡음 증폭기
CN113242024B (zh) * 2021-05-18 2023-06-20 深圳市时代速信科技有限公司 一种射频功率放大器
TWI796028B (zh) * 2021-12-02 2023-03-11 立積電子股份有限公司 射頻裝置及其多頻匹配電路
US11689227B1 (en) * 2021-12-03 2023-06-27 Hangzhou Geo-Chip Technology Co., Ltd. Broadband power amplifier device and transmitter
US12255674B2 (en) * 2022-01-20 2025-03-18 Qualcomm Incorporated Constant-phase attenuator techniques in radio frequency front end (RFFE) amplifiers

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CN1398109A (zh) * 1990-08-02 2003-02-19 汤姆森消费电子有限公司 电子束扫描速度调制器
US20080119214A1 (en) * 2006-11-16 2008-05-22 Lianjun Liu Transmitter with improved power efficiency
CN201476827U (zh) * 2009-07-24 2010-05-19 周国隆 多相流测量装置
US20100291888A1 (en) * 2009-05-12 2010-11-18 Qualcomm Incorporated Multi-mode multi-band power amplifier module
US20110037516A1 (en) * 2009-08-03 2011-02-17 Qualcomm Incorporated Multi-stage impedance matching

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CN1398109A (zh) * 1990-08-02 2003-02-19 汤姆森消费电子有限公司 电子束扫描速度调制器
US20080119214A1 (en) * 2006-11-16 2008-05-22 Lianjun Liu Transmitter with improved power efficiency
US20100291888A1 (en) * 2009-05-12 2010-11-18 Qualcomm Incorporated Multi-mode multi-band power amplifier module
CN201476827U (zh) * 2009-07-24 2010-05-19 周国隆 多相流测量装置
US20110037516A1 (en) * 2009-08-03 2011-02-17 Qualcomm Incorporated Multi-stage impedance matching

Also Published As

Publication number Publication date
US20130190036A1 (en) 2013-07-25
KR101547602B1 (ko) 2015-08-26
WO2013112631A1 (en) 2013-08-01
CN104067513A (zh) 2014-09-24
IN2014CN04462A (enExample) 2015-09-04
US8666338B2 (en) 2014-03-04
JP5739075B2 (ja) 2015-06-24
EP2807744B1 (en) 2020-03-18
EP2807744A1 (en) 2014-12-03
KR20140116528A (ko) 2014-10-02
JP2015510715A (ja) 2015-04-09

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