IN2014CN04462A - - Google Patents

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Publication number
IN2014CN04462A
IN2014CN04462A IN4462CHN2014A IN2014CN04462A IN 2014CN04462 A IN2014CN04462 A IN 2014CN04462A IN 4462CHN2014 A IN4462CHN2014 A IN 4462CHN2014A IN 2014CN04462 A IN2014CN04462 A IN 2014CN04462A
Authority
IN
India
Prior art keywords
transmit path
driver amplifier
amplifier
matching circuit
bypass
Prior art date
Application number
Inventor
Yu Zhao
Nathan M Pletcher
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014CN04462A publication Critical patent/IN2014CN04462A/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/213—A variable capacitor being added in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/378—A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21136—An input signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21175—An output signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7233—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier, switched on or off by putting into parallel or not, by choosing between amplifiers by one or more switch(es), being impedance adapted by switching an adapted passive network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

A multi mode driver amplifier with tunable load matching is disclosed. In an exemplary design an apparatus includes a multi mode driver amplifier and a tunable impedance matching circuit. The driver amplifier amplifies an input radio frequency RF signal and provides an amplified RF signal. The tunable impedance matching circuit matches an output impedance of the driver amplifier. The apparatus may include a main transmit path (510) and a bypass transmit path (512). The bypass transmit path (512) may include the driver amplifier (542) and the tunable impedance matching circuit (552) and no power amplifier. The main transmit path (510) may include a second driver amplifier (540) and a power amplifier (560). The main transmit path (510) may be selected for transmit power levels higher than a threshold level and the bypass transmit path (512) may be selected for transmit power levels lower than the threshold level.
IN4462CHN2014 2012-01-23 2013-01-23 IN2014CN04462A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/356,492 US8666338B2 (en) 2012-01-23 2012-01-23 Multi-mode bypass driver amplifier with tunable load matching
PCT/US2013/022806 WO2013112631A1 (en) 2012-01-23 2013-01-23 Multi-mode bypass driver amplifier with tunable load matching

Publications (1)

Publication Number Publication Date
IN2014CN04462A true IN2014CN04462A (en) 2015-09-04

Family

ID=47684032

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4462CHN2014 IN2014CN04462A (en) 2012-01-23 2013-01-23

Country Status (7)

Country Link
US (1) US8666338B2 (en)
EP (1) EP2807744B1 (en)
JP (1) JP5739075B2 (en)
KR (1) KR101547602B1 (en)
CN (1) CN104067513B (en)
IN (1) IN2014CN04462A (en)
WO (1) WO2013112631A1 (en)

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WO2015123668A1 (en) 2014-02-14 2015-08-20 University Of Southern California Hybrid-based cancellation in presence of antenna mismatch
US9425746B2 (en) 2014-03-28 2016-08-23 Qualcomm Incorporated Spurious signal mitigation for carrier aggregation amplifier
US10171039B2 (en) * 2015-08-31 2019-01-01 Infineon Technologies Ag Devices and methods that facilitate power amplifier off state performance
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US10050591B2 (en) * 2016-03-23 2018-08-14 Cree, Inc. LC network for a power amplifier with selectable impedance
US10177723B2 (en) * 2016-08-30 2019-01-08 Qualcomm Incorporated Reconfigurable power amplifier
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TWI652913B (en) * 2016-10-28 2019-03-01 絡達科技股份有限公司 Multi-mode multi-band transceiver, radio frequency front-end circuit and radio frequency system using the same
JP2018181943A (en) 2017-04-05 2018-11-15 株式会社村田製作所 Power amplifier module
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US10411659B2 (en) * 2018-01-25 2019-09-10 Cree, Inc. RF power amplifier with frequency selective impedance matching network
CN111316564A (en) * 2018-01-30 2020-06-19 阿塞尔桑电子工业及贸易股份公司 Power amplifier system
EP3716493B1 (en) * 2019-03-29 2021-11-10 Nokia Solutions and Networks Oy Full duplex transmission arrangement
JP2021044713A (en) 2019-09-11 2021-03-18 株式会社村田製作所 Power amplifier circuit
KR102188036B1 (en) * 2020-05-11 2020-12-07 국방과학연구소 Low noise amplifier with merged duplexer
CN113242024B (en) * 2021-05-18 2023-06-20 深圳市时代速信科技有限公司 Radio frequency power amplifier
TWI796028B (en) * 2021-12-02 2023-03-11 立積電子股份有限公司 Radio frequency device and multi-band matching circuit
US11689227B1 (en) * 2021-12-03 2023-06-27 Hangzhou Geo-Chip Technology Co., Ltd. Broadband power amplifier device and transmitter
US20230231586A1 (en) * 2022-01-20 2023-07-20 Qualcomm Incorporated Constant-phase attenuator techniques in radio frequency front end (rffe) amplifiers

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Also Published As

Publication number Publication date
WO2013112631A1 (en) 2013-08-01
CN104067513A (en) 2014-09-24
KR101547602B1 (en) 2015-08-26
EP2807744A1 (en) 2014-12-03
CN104067513B (en) 2016-11-02
US8666338B2 (en) 2014-03-04
JP2015510715A (en) 2015-04-09
US20130190036A1 (en) 2013-07-25
JP5739075B2 (en) 2015-06-24
KR20140116528A (en) 2014-10-02
EP2807744B1 (en) 2020-03-18

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