CN104064606B - 一种金属‑绝缘体层‑半导体太阳能电池 - Google Patents

一种金属‑绝缘体层‑半导体太阳能电池 Download PDF

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CN104064606B
CN104064606B CN201410313634.2A CN201410313634A CN104064606B CN 104064606 B CN104064606 B CN 104064606B CN 201410313634 A CN201410313634 A CN 201410313634A CN 104064606 B CN104064606 B CN 104064606B
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郭立强
丁建宁
凌智勇
程广贵
张忠强
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Zhejiang Fengchuang Future New Materials Co ltd
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Abstract

本发明涉及半导体技术和光伏领域，特指一种新型金属‑绝缘体层‑半导体太阳电池。从顶层至底层依次为：Ag网格栅线、减反射层、金属薄膜、Ga2O3绝缘层、p型硅片、Al背面场；对于MIS太阳电池，少子直接随道电流较大，用Ga2O3薄膜作为绝缘层即可抑制多子电流，较好改善光伏特性，以金属薄膜费米为能级零点，以金属薄膜半导体的电流方向为正向，金属薄膜与绝缘层界面使势垒高度可随金属功函数变化，进而提高势垒高度增加电荷聚集量，提高电池效率。

Description

一种金属-绝缘体层-半导体太阳能电池
技术领域
本发明涉及半导体技术和光伏领域，特指一种新型金属-绝缘体层-半导体太阳电池，特指一种MIS太阳电池。
背景技术
MIS太阳电池由金属-半导体结构成，利用金属-半导体结的肖特基势垒产生内场来分离光生载流子。和P-N结太阳电池相比，MIS太阳电池具有以下优点：一，制结快速、简单，不需高温且材料消耗少；二，在电池作用区，避免了因高温扩散引起的晶格损伤和少子寿命退化以及体内载流子复合过大等问题；三，延长到硅表面的电场，有助于收集短波光生少子，避免了P-N结太阳电池表面出现的“死层”；四，结构灵活，可适用于单晶、多晶和非晶态材料电池，且金属、绝缘体、半导体选择余地大，可进行多种组合以满足不同的需要；但目前MIS太阳电池应用亦存在一些问题，例如：理论效率低、绝缘层制作困难以及长期稳定性差等，本发明拟采用最新半导体技术工艺，通过精确控制太阳电池材料生长来控制肖特基势垒高度，制备界面态适宜的MIS太阳电池。
发明内容
本发明的目的是提供一种MIS太阳电池及制备方法，利用最新半导体工艺在低温下制备的MIS太阳电池在P型硅衬底上采用Ga2O3做绝缘层，金属薄膜做金属层；绝缘层制作容易的优点；该电池的理论转化效率可达到15%。
MIS太阳电池结构，如图1所示，从顶层至底层依次为：Ag网格栅线、减反射层、金属薄膜、Ga2O3绝缘层、p型硅片、Al背面场；对于MIS太阳电池，少子直接随道电流较大，用Ga2O3薄膜作为绝缘层即可抑制多子电流，较好改善光伏特性，其原理如图2所示，以金属薄膜费米为能级零点，以金属薄膜半导体的电流方向为正向，金属薄膜与绝缘层界面使势垒高度可随金属功函数变化，进而提高势垒高度增加电荷聚集量，提高电池效率。
一种金属层-绝缘体层-半导体太阳能电池，其特征在于：所述绝缘体层为Ga2O3绝缘层。
所述Ga2O3绝缘层的厚度为1-20nm。
所述金属层采用金属薄膜，为常规技术选择，厚度为5-15 nm。
所述半导体采用p型硅片，为常规技术选择，厚度为200μm-650μm。
进一步地，在金属薄膜上设有减反射层，减反射层为Ga2O3，厚度为60-150 nm。
进一步地，在p型硅片背面设有Al背面场，厚度为100-500 nm。
进一步地，在减反射层内设有Ag网格栅线。
进一步地，Ga2O3绝缘层薄膜和Ga2O3减反射层薄膜采用ALD或等离子体化学气相沉积技术制备；其中，采用ALD技术制备Ga2O3时，以三甲基镓等为镓源，以水为氧源，控制生长温度为100~200℃，脉冲循环为1~1000；其中，采用等离子体化学气相沉积技术，以三甲基镓等为镓源，以氮气携带去离子水为氧源，控制生长温度为100~300℃，压强为5~10Pa，射频功率为100W。
本发明解决其关键问题所采用的技术方案是在P型硅片上提供一种MIS太阳电池的制备方法，其具体加工工艺步骤如下：
1、P型硅衬底的表面随机制绒。
2、制备Ga2O3绝缘层薄膜，厚度为1-20nm。
3、采用磁控溅射技术或蒸发技术制备金属薄膜，厚度为5-20 nm。
4、制备Ga2O3减反射层薄膜，厚度为60-150 nm。
5、制备金属铝背面场，厚度为100-500 nm。
6、印刷Ag前网格，烧结制成电极。
本发明的有益效果：设计了新型材料体系MIS太阳电池，该太阳电池在低温工艺条件下，制备工艺简单的优点。
附图说明
图1是本发明MIS太阳电池结构示意图
1，Ag网格栅线；2，减反层；3，金属薄膜；4，Ga2O3绝缘层；5，p型硅片；6，Al背面场
图2是本发明MIS太阳电池能带图。
具体实施方式
实例一
1、 P型多晶硅衬底的清洗及表面制绒
1.1、将硅片加入到体积比为1:2:5的氨水、双氧水和去离子水的混合溶液煮沸5~10分钟；
1.2、分别依次用甲苯、丙酮、酒精超声波清洗15分钟；
1.3、将P型多晶硅片放在体积比为4:1:1的HF、HNO3和去离子水混合溶液中进行随机制绒，完成后反复用去离子水冲洗表面，然后用氮气枪吹干；其中所采用HF的质量比浓度为10%的、HNO3的质量比浓度为10%。
2、利用ALD以三甲基镓等为镓源，以水为氧源，控制生长温度为200℃，脉冲循环为10，
制备Ga2O3绝缘层薄膜，厚度为12 nm。
3、利用磁控溅射技术，以铝为靶材，在室温下，设置反应压强为1Pa、射频功率为100W制
备金属铝薄膜，时间为0.1分钟，厚度为5 nm。
4、结合掩膜技术，将需要印刷Ag网格栅线部位遮挡，利用ALD以三甲基镓等为镓源，以水为氧源，控制生长温度为200℃，脉冲循环为100，制备Ga2O3薄膜作为减反层，厚度
为120nm。。
5、利用磁控溅射技术，以铝为靶材，在室温下，设置反应压强为1Pa、射频功率为100W制备金属铝薄膜作为电池背面场，时间为20分钟，厚度为200 nm。
6、Ag网格栅线印刷：用丝网印刷机印刷银浆，在温度为550℃下烧结10分钟，制成电极。
实例二：
1、 P型多晶硅衬底的清洗及表面制绒
1.1、将硅片加入到体积比为1:2:5的氨水、双氧水和去离子水的混合溶液煮沸5~10分钟；
1.2、分别依次用甲苯、丙酮、酒精超声波清洗15分钟；
1.3、将P型单晶硅片放在浓度为10%的氢氧化钠的异丙醇或乙醇的混合溶液中，或浓度为10%的氢氧化钾的异丙醇或乙醇的混合溶液中；进行随机制绒，完成后反复用去离子水冲洗表面，然后用氮气枪吹干。
2、利用等离子化学气相沉积技术以三甲基镓等为镓源，以氮气携带去离子水为氧源，控制生长温度为200℃，压强为5Pa，射频功率为100W，制备Ga2O3绝缘层薄膜，厚度为20nm。
3、利用磁控溅射技术，以铝为靶材，在室温下，设置反应压强为1Pa、射频功率为100W制备金属铝薄膜，时间为0.2分钟，厚度为10 nm。
4、结合掩膜技术，利用等离子化学气相沉积技术以三甲基镓等为镓源，以氮气携带去离子
水为氧源，控制生长温度为200℃，压强为5Pa，射频功率为100W，制备Ga2O3绝缘层薄膜，厚度为150 nm。
5、利用磁控溅射技术，以铝为靶材，在室温下，设置反应压强为1Pa、射频功率为100W制
备金属铝薄膜作为电池背面场，时间为30分钟，厚度为300 nm。
6、Ag网格栅线印刷：用丝网印刷机印刷银浆，在温度为550℃下烧结10分钟，制成电极。

Claims (6)

1.一种金属-绝缘体层-半导体太阳能电池，所述太阳能电池从顶层至底层依次为：Ag网格栅线、减反射层、金属薄膜、Ga2O3绝缘层、p型硅片、Al背面场；在金属薄膜上设有减反射层，减反射层为Ga2O3，厚度为60-150nm，其特征在于：Ga2O3绝缘层薄膜和Ga2O3减反射层薄膜采用ALD或等离子体化学气相沉积技术制备；其中，采用ALD技术制备Ga2O3时，以三甲基镓为镓源，以水为氧源，控制生长温度为100～200℃，脉冲循环为1～1000；其中，采用等离子体化学气相沉积技术，以三甲基镓等为镓源，以氮气携带去离子水为氧源，控制生长温度为100～300℃，压强为5～10Pa，射频功率为100W。
2.如权利要求1所述的一种金属-绝缘体层-半导体太阳能电池，其特征在于：所述Ga2O3绝缘层的厚度为1-20nm。
3.如权利要求1所述的一种金属-绝缘体层-半导体太阳能电池，其特征在于：所述金属薄膜，厚度为5-15nm。
4.如权利要求1所述的一种金属-绝缘体层-半导体太阳能电池，其特征在于：所述p型硅片厚度为200μm-650μm。
5.如权利要求1所述的一种金属-绝缘体层-半导体太阳能电池，其特征在于：在p型硅片背面设有Al背面场，Al背面场厚度为100-500nm。
6.如权利要求1所述的一种金属-绝缘体层-半导体太阳能电池，其特征在于：在减反射层内设有Ag网格栅线。
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