CN104064247A - 3D PIN-structure Beta irradiation battery and preparation method thereof - Google Patents
3D PIN-structure Beta irradiation battery and preparation method thereof Download PDFInfo
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- CN104064247A CN104064247A CN201410301095.0A CN201410301095A CN104064247A CN 104064247 A CN104064247 A CN 104064247A CN 201410301095 A CN201410301095 A CN 201410301095A CN 104064247 A CN104064247 A CN 104064247A
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Abstract
The invention discloses a 3D PIN-structure Beta irradiation battery and a preparation method thereof, and mainly aims to solve the problem that the existing Beta irradiation battery is low in energy conversion efficiency and output power. The method comprises the following steps: first, an N-type lowly-doped 4H-SiC epitaxial layer and a P-type highly-doped 4H-SiC epitaxial layer are sequentially grown on a cleaned 4H-SiC substrate in an epitaxial way; then, an Ni ohmic contact electrode is deposited on the P-type highly-doped epitaxial layer and the non-epitaxial back of the SiC substrate; next, a trench window is photo-etched on a P-type ohmic contact electrode, and a trench is etched; and finally, a Beta radioactive source is placed in the trench to obtain a 3D PIN-structure Beta irradiation battery. The Beta irradiation battery prepared by use of the method has the advantages of large area of contact between the Beta radioactive source and a semiconductor, high nuclear material utilization rate, high energy collection rate, high output current and high output voltage, and can permanently supply power to a heart pacemaker and other tiny circuits or supply power on unattended occasions in need of long-term power supply.
Description
Technical field
The invention belongs to microelectronic, relate to semiconductor device structure and preparation method, specifically a kind of silicon carbide-based PIN structure β irradiation battery and preparation method thereof, can be used for the small circuit such as minute mechanical and electrical system, pacemaker and Aero-Space, deep-sea, polar region etc. needs long-term power supply and unattended occasion.
Technical background
Along with people are for the demand of low-power consumption, long-life, high reliability and small size power-supply unit, and concern to nuclear waste disposal, minisize nuclear battery becomes and receives much concern.Minisize nuclear battery is because its outstanding feature can be used to solve the long-term powerup issue of robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.And be expected to replace solar cell and thermoelectric (al) type radioisotope battery, solve at space flight and aviation field micro-/receive the long-term powerup issue of satellite, deep space unmanned probing device and ion propeller etc.
Nineteen fifty-three found by Rappaport research, and beta (β-Particle) radial energy that utilizes isotope to decay to produce produces electron-hole pair in semiconductor, and this phenomenon is called as β-Voltaic Effect.Nineteen fifty-seven, first Elgin-Kidde is used in power supply supply side by β-Voltaic Effect, successfully produces first radioisotope micro battery β-Voltaic Battery.From 2006, along with the progress of semiconductor material with wide forbidden band SiC preparation and technology, there is the relevant report of the radioisotope micro battery based on SiC.Because radiator beta-ray is less than αsource to the damage of human body, obtain wider application at medical domain, as, pacemaker.
The Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose is disclosed by Zhang Lin in Chinese patent CN101325093A.Because schottky contact layer in this schottky junction nuclear battery covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only has part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery.Therefore, the nuclear battery projectile energy loss of this structure is large, and energy conversion efficiency is lower.
Document " Demonstration of a4H SiC betavoltaic cell " has been introduced the C.I.Tomas by USA New York Cornell university, M.V.S.Chandrashekhar, and the people such as Hui Li have proposed silit PN junction formula nuclear battery.This structure adopts the highly doped substrate of P type, and immature in the existing technique of its Grown epitaxial loayer, therefore, easily introduces surface imperfection, and device creepage is large, and energy conversion rate is lower.
Document " Demonstration of a tadiation resistant; hight efficiency SiC betavoltaic " has been introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy and S.Rodgers, the people such as T.George have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 1.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, P type Ohm contact electrode 6, the highly doped SiC layer 4 of P type, P type SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate 1 of N-shaped and N-type Ohm contact electrode 5.In this structure, only have the raw charge carrier of irradiation in depletion layer and in a near minority diffusion length to be collected.And, for avoiding Ohm contact electrode to stop incident ion, P type Ohmic electrode is made in to a corner of device, make from P type Ohmic electrode the raw charge carrier of the irradiation away from transport process by compound, reduce energy transformation ratio, reduced the output current of battery.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, a kind of 3D formula PIN structure β irradiation battery and preparation method thereof is proposed, the barrier effect of high energy β particle radiator beta-ray being given off with elimination metal electrode, increase radiator beta-ray and semi-conductive contact area simultaneously, improve the utilization factor of radiator beta-ray, thereby improve output current and the output voltage of battery.
Technical scheme of the present invention is achieved in that
One. 3D formula PIN structure β irradiation battery of the present invention, comprise: PIN knot and radiator beta-ray, PIN knot is followed successively by from bottom to top, N-type Ohm contact electrode 5, the highly doped 4H-SiC substrate 1 of N-type, the low-doped epitaxial loayer 2 of N-type, the highly doped epitaxial loayer 3 of P type and P type Ohm contact electrode 4, it is characterized in that: in described PIN knot, be provided with at least n groove 6, wherein n >=2, radiator beta-ray 7 is placed in this groove 6, to realize making full use of high energy β particle.
As preferably, it is 63 nickel that described radiator beta-ray 7 adopts atomic mass, i.e. Ni
63.
As preferably, it is 147 promethium that described radiator beta-ray 7 adopts atomic mass, i.e. Pm
147.
As preferably, the degree of depth h of described groove 6 meets m+q<h<m+r+q, and wherein m is the thickness of the highly doped epitaxial loayer 3 of P type, and r is the thickness of the low-doped epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4.
As preferably, the width L of described groove 6 meets L≤2g, and wherein, g is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in radiator beta-ray, is Ni for radiator beta-ray
63, its value is: g=6 μ m is Pm for radiator beta-ray
147, its value is: g=16 μ m.
As preferably, the spacing d of described adjacent two grooves 6 meets d>=i, and wherein, i is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in 4H-SiC, is Ni for radiator beta-ray
63, its value is: i=10 μ m is Pm for radiator beta-ray
147, its value is: i=15 μ m.
As preferably, it is lx10 that described substrate 1 adopts doping content
18cm
-3n-type 4H-SiC, the highly doped epitaxial loayer 3 of P type and the low-doped epitaxial loayer 2 of N-type are 4H-SiC extension, wherein the doping content of the highly doped epitaxial loayer 3 of P type is 1x10
19～5.5x10
19cm
-3, the doping content of the low-doped epitaxial loayer 2 of N-type is 1x10
15～3x10
15cm
-3.
Two. preparation method of the present invention comprises the following steps:
1) SiC print is cleaned, to remove surface contaminant;
2) utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10
15～3x10
15cm
-3, thickness is the low-doped epitaxial loayer of the N-type of 5～10 μ m;
3) utilizing chemical vapor deposition CVD method is 1x10 in the low-doped epi-layer surface epitaxial growth of N-type one deck doping content
19～5.5x10
19cm
-3, thickness is the highly doped epitaxial loayer of P type of 0.5～1.5 μ m;
4) utilize in the highly doped epi-layer surface of P type the Ni metal level that electron-beam vapor deposition method deposit a layer thickness is 300nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 DEG C;
5) be made into reticle according to the position of nuclear battery groove, at the Ni of deposit layer on surface of metal spin coating one deck photoresist; Utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ni metal level to corrosion window place corrodes, and exposes the highly doped epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
6) utilize inductively coupled plasma ICP lithographic technique, carve for placing radiator beta-ray, the degree of depth is 6～11.5 μ m, and width is 4～14 μ m, and spacing is n groove, wherein n >=2 of 12～25 μ m;
7) method that adopts deposit or smear is placed radiator beta-ray in groove, obtains 3D formula PIN structure β irradiation battery.
The present invention compared with prior art tool has the following advantages:
1. radiator beta-ray is placed in groove by the present invention, and the high energy β particle that radiator beta-ray is produced is directly injected the space charge region of PIN knot, has reduced the energy loss of high energy β particle, thereby has improved collection of energy rate;
2. the present invention, because groove width is not more than the twice of high energy β particle average incident degree of depth in radiator beta-ray material that radiator beta-ray discharges, has significantly reduced the energy attenuation of high energy β particle in radiator beta-ray inside, has improved collection of energy rate;
3. the present invention is because the backing material 4H-SiC adopting is larger than traditional Si energy gap, and radiation-resisting performance is better, can reduce the damage of high energy β particle to device, has improved the operating voltage of battery, has extended the serviceable life of battery simultaneously.
Brief description of the drawings
Fig. 1 is the schematic cross-section of existing PIN nuclear battery;
Fig. 2 is the schematic cross-section of 3D formula PIN structure β irradiation battery of the present invention;
Fig. 3 is the schematic flow sheet that the present invention makes 3D formula PIN structure β irradiation battery.
Embodiment
With reference to Fig. 2, irradiation battery of the present invention, comprising: the highly doped 4H-SiC substrate 1 of N-type, the low-doped epitaxial loayer 2 of N-type, the highly doped epitaxial loayer 3 of P type and P type Ohm contact electrode 4, N-type Ohm contact electrode 5, groove 6 and radiator beta-ray 7.Wherein, the low-doped epitaxial loayer 2 of N-type grows on the silicon face of the highly doped 4H-SiC substrate 1 of N-type, the highly doped 4H-SiC epitaxial loayer 3 of P type grows on the low-doped 4H-SiC epitaxial loayer 2 of N-type, P type Ohm contact electrode 4 is deposited on the highly doped 4H-SiC epitaxial loayer 3 of P type, adopts metal Ni, and its thickness is 300nm, back side N-type Ohm contact electrode 5 is deposited on the dorsal part of the highly doped 4H-SiC substrate 1 of N-type, adopt metal Ni, its thickness is 300nm, forms PIN knot.In PIN knot, be provided with n groove 6, n>=2, its degree of depth h meets m+q<h<m+n+q, m is the thickness of the highly doped epitaxial loayer 3 of P type, n is the thickness of the low-doped epitaxial loayer 2 of N-type, q is the thickness of P type Ohm contact electrode 4, and its width L meets L≤2g, is Ni for radiator beta-ray
63, its value is: g=6 μ m is Pm for radiator beta-ray
147, its value is: g=16 μ m, and the spacing d of adjacent two grooves 6 meets d>=i, i is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in 4H-SiC, is Ni for radiator beta-ray
63, its value is: i=10 μ m is Pm for radiator beta-ray
147, its value is: i=15 μ m; Radiator beta-ray 7 is placed in groove 6;
When battery in working order under, the most of high energy β particle radiating from radiator beta-ray is directly injected into the space charge region of the highly doped epitaxial loayer 3 of P type and low-doped epitaxial loayer 2 near interfaces of N-type, and then excites charge carrier, form output current.
With reference to Fig. 3, the method that the present invention makes 3D formula PIN structure β irradiation battery provides following three embodiment:
Embodiment 1, preparing radiator beta-ray is Ni
63, there is the 3D formula PIN structure β irradiation battery of two grooves.
Step 1: clean 4H-SiC print, to remove surface contaminant, as shown in Fig. 3 (a).
(1.1) be lx10 by doping content
18cm
-3highly doped N-shaped 4H-SiC substrate print at NH
4oH+H
2o
2reagent soaks sample 10min, takes out post-drying, to remove sample surfaces organic remains;
(1.2) the 4H-SiC print of removing after surperficial organic remains is re-used to HCl+H
2o
2reagent soaks sample 10min, takes out post-drying, to remove ionic contamination.
Step 2: the low-doped epitaxial loayer of epitaxial growth N-type, as shown in Fig. 3 (b).
On SiC print after cleaning, utilize the N-type doped epitaxial layer of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x10
15cm
-3, thickness is the low-doped epitaxial loayer of the N-type of 5 μ m.
Step 3: the highly doped epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
On the low-doped epitaxial loayer of epitaxially grown N-type, utilize the highly doped epitaxial loayer of P type of chemical vapor deposition CVD method epitaxial growth aluminium doping, its process conditions are: epitaxial temperature is 1570 DEG C, pressure is 100mbar, reacting gas is silane and propane, carrier gas is pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminium doping content is 1x10
19cm
-3, thickness is the highly doped epitaxial loayer of P type of 0.5 μ m.
Step 4: deposit Ohm contact electrode, as shown in Fig. 3 (d).
(4.1) the SiC print completing after the highly doped outer layer growth of P type is carried out to RCA standard cleaning;
(4.2) print after cleaning is put on the microslide of electron beam evaporation deposition machine, adjusting microslide is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 × 10
-4pa, adjusting line is 40mA, the Ni metal level that is 300nm in surface deposition a layer thickness of the highly doped epitaxial loayer of the P of SiC print type;
(4.3) utilize electron-beam vapor deposition method, at the substrate Si C Ni metal level that back side deposition thickness of extension is not 300nm;
At (4.4) 1100 DEG C, short annealing 3 minutes in nitrogen atmosphere.
Step 5: carve structure graph window on the Ni metal level of SiC extension one outgrowth, as shown in Fig. 2 (e).
(5.1) spin coating one deck photoresist on the Ni layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of two grooves of battery, photoresist is exposed with electron beam, forms corrosion window;
(5.2) utilize reactive ion technique etching N i metal level, reacting gas adopts oxygen, exposes the highly doped epitaxial loayer of P type, obtains the etching window of P type Ohm contact electrode and groove;
Step 6: etching groove, as shown in Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 6 μ m, and width is 4 μ m, and spacing is two grooves of 12 μ m.
Step 7: place radiator beta-ray, as shown in Fig. 3 (g).
The method that adopts deposit or smear is placed radiator beta-ray Ni in each groove
63, obtain 3D formula PIN structure β irradiation battery.
Embodiment 2, preparing radiator beta-ray is Ni
63, there is the 3D formula PIN structure β irradiation battery of six grooves.
Step 1: clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step 1 of embodiment 1.
Step 2: the low-doped epitaxial loayer of epitaxial growth N-type, as Fig. 3 (b).
On SiC print after cleaning, utilize the N-type doped epitaxial layer of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and completing nitrogen doped concentration is 1.5x10
15cm
-3, thickness is the growth of the low-doped epitaxial loayer of N-type of 8 μ m.
Step 3: the highly doped epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
On the low-doped epitaxial loayer of epitaxial growth N-type, utilize the highly doped epitaxial loayer of P type of chemical vapor deposition CVD method epitaxial growth Al-doping, its process conditions are: epitaxial temperature is 1570 DEG C, pressure is 100mbar, reacting gas is silane and propane, carrier gas is pure hydrogen, impurity source is trimethyl aluminium, and completing aluminium doping content is 3x10
19cm
-3, thickness is the growth of the highly doped epitaxial loayer of P type of 1 μ m.
Step 4: deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step 4 of embodiment mono-.
Step 5: carve structure graph window on the Ni metal level of SiC extension one outgrowth, as Fig. 3 (e).
(5.1) spin coating one deck photoresist on the Ni layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of six grooves of battery, photoresist is exposed with electron beam, forms corrosion window;
(5.2) utilize reactive ion technique etching N i metal level, reacting gas adopts oxygen, exposes the highly doped epitaxial loayer of P type, obtains the etching window of P type Ohm contact electrode and groove.
Step 6: etching groove, as Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 9 μ m, and width is 10 μ m, and spacing is six grooves of 20 μ m;
Step 7: place radiator beta-ray, as Fig. 3 (g).
This step is identical with the step 7 of embodiment mono-.
Embodiment 3, preparing radiator beta-ray is Pm
147, there is the 3D formula PIN structure β irradiation battery of 12 grooves.
Steps A: clean 4H-SiC print, to remove surface contaminant, this step is identical with the step 1 of embodiment 1, as Fig. 3 (a).
Step B: the N-type doped epitaxial layer that utilizes the doping of chemical vapor deposition CVD method epitaxial growth nitrogen on the SiC print after cleaning.Its process conditions are: epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen.Obtaining nitrogen doped concentration is 3x10
15cm
-3, thickness is that the low-doped epitaxial loayer of the N-type of 10 μ m is as Fig. 3 (b).
Step C: the highly doped epitaxial loayer of P type that utilizes chemical vapor deposition CVD method epitaxial growth Al-doping on the low-doped epitaxial loayer of epitaxial growth N-type, its process conditions are: epitaxial temperature is 1570 DEG C, pressure is 100mbar, reacting gas is silane and propane, carrier gas is pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminium doping content is 5.5x10
19cm
-3, thickness is that the highly doped epitaxial loayer of P type of 1.5 μ m is as Fig. 3 (c).
Step D: deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step 4 of embodiment mono-.
Step e: spin coating one deck photoresist on the Ni layer on surface of metal of SiC extension one outgrowth, be made into reticle according to the position of 12 grooves of battery, photoresist is exposed with electron beam, form corrosion window; Then utilize reactive ion technique etching N i metal level, reacting gas adopts oxygen, exposes the highly doped epitaxial loayer of P type, obtains the etching window of P type Ohm contact electrode and groove as Fig. 3 (e).
Step F: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped epitaxial loayer of P type exposing at etching groove window is 11.5 μ m, and width is 14 μ m, spacing is that 12 grooves of 25 μ m are as Fig. 3 (f).
Step G: the method that adopts deposit or smear, in each groove, place radiator beta-ray Pm
147, obtain 3D formula PIN structure β irradiation battery as Fig. 3 (g).
Claims (8)
1. a 3D formula PIN structure β irradiation battery, comprise: radiator beta-ray and PIN knot, this PIN knot is followed successively by from bottom to top, N-type Ohm contact electrode (5), the highly doped 4H-SiC substrate of N-type (1), the low-doped epitaxial loayer of N-type (2), the highly doped epitaxial loayer of P type (3) and P type Ohm contact electrode (4), it is characterized in that: in described PIN knot, be provided with n groove (6), wherein n >=2, radiator beta-ray (7) is placed in this groove (6), to realize making full use of high energy β particle.
2. battery according to claim 1, is characterized in that radiator beta-ray (7) adopts the nickel that atomic mass is 63, i.e. Ni
63.
3. battery according to claim 1, is characterized in that the promethium that radiator beta-ray (7) atomic mass is 147, i.e. Pm
147.
4. battery according to claim 1, the degree of depth h that it is characterized in that groove (6) meets m+q<h<m+r+q, wherein m is the thickness of the highly doped epitaxial loayer of P type (3), r is the thickness of the low-doped epitaxial loayer of N-type (2), and q is the thickness of P type Ohm contact electrode (4).
5. according to the battery described in claim 1 or 2 or 3, the width L that it is characterized in that groove (6) meets L≤2g, wherein, g is the average incident degree of depth of high energy β particle in radiator beta-ray that radiator beta-ray (7) discharges, and is Ni for radiator beta-ray
63, its value is: g=6 μ m is Pm for radiator beta-ray
147, its value is: g=16 μ m.
6. battery according to claim 1, the spacing d that it is characterized in that adjacent two grooves (6) meets d>=i, wherein, i is the average incident degree of depth of high energy β particle in 4H-SiC that radiator beta-ray (7) discharges, and is Ni for radiator beta-ray
63, its value is: i=10 μ m is Pm for radiator beta-ray
147, its value is: i=15 μ m.
7. battery according to claim 1, is characterized in that it is lx10 that substrate (1) adopts doping content
18cm
-3n-type 4H-SiC, the highly doped epitaxial loayer of P type (3) and the low-doped epitaxial loayer of N-type (2) are 4H-SiC extension, wherein, the doping content of the highly doped epitaxial loayer of P type (3) is 1x10
19～5.5x10
19cm
-3, the doping content of the low-doped epitaxial loayer of N-type (2) is 1x10
15～3x10
15cm
-3.
8. a preparation method for 3D formula PIN structure β irradiation battery, comprises the following steps:
1) SiC print is cleaned, to remove surface contaminant;
2) utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10
15～3x10
15cm
-3, thickness is the low-doped epitaxial loayer of the N-type of 5～10 μ m;
3) utilizing chemical vapor deposition CVD method is 1x10 in the low-doped epi-layer surface epitaxial growth of N-type one deck doping content
19～5.5x10
19cm
-3, thickness is the highly doped epitaxial loayer of P type of 0.5～1.5 μ m;
4) utilize in the highly doped epi-layer surface of P type the Ni metal level that electron-beam vapor deposition method deposit a layer thickness is 300nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 DEG C;
5) be made into reticle according to the position of nuclear battery groove, at the Ni of deposit layer on surface of metal spin coating one deck photoresist; Utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ni metal level to corrosion window place corrodes, and exposes P type SiC epitaxial loayer, obtains P type Ohm contact electrode and guttering corrosion window;
6) utilize inductively coupled plasma ICP lithographic technique, carve for placing radiator beta-ray, the degree of depth is 6～11.5 μ m, and width is 5～14 μ m, and spacing is n groove, wherein n >=2 of 12～25 μ m;
7) method that adopts deposit or smear is placed radiator beta-ray in groove, obtains 3D formula PIN structure β irradiation battery.
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| CN113990549A (en) * | 2021-10-09 | 2022-01-28 | 西安电子科技大学 | Distributed electrode Pin type beta irradiation battery with thinned P type region and preparation method thereof |
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| 张玉娟: "4H-SiCβ射线核电池核探测器的研究", 《中国优秀硕士学位论文全文数据库 工程科技II辑》, no. 3, 15 March 2013 (2013-03-15) * |
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| CN104409127A (en) * | 2014-11-14 | 2015-03-11 | 中国工程物理研究院核物理与化学研究所 | Composite converting type isotope battery |
| CN104409127B (en) * | 2014-11-14 | 2017-05-10 | 中国工程物理研究院核物理与化学研究所 | Composite converting type isotope battery |
| CN113990549A (en) * | 2021-10-09 | 2022-01-28 | 西安电子科技大学 | Distributed electrode Pin type beta irradiation battery with thinned P type region and preparation method thereof |
| CN113990549B (en) * | 2021-10-09 | 2023-08-08 | 西安电子科技大学 | Distributed electrode Pin type beta irradiation battery with thinned P type region and preparation method |
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