CN104051041B - Sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and manufacturing method thereof - Google Patents
Sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and a manufacturing method thereof. The sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and the manufacturing method thereof mainly solve the problems that an existing nuclear battery is low in energy transformation ratio and output power. The sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery comprises an upper PIN junction, a lower PIN junction and an alpha radioactive source layer, wherein the upper PIN junction and the lower PIN junction are connected in parallel. The lower PIN junction sequentially comprises a P-type ohmic contact electrode, a P-type highly-doped GaN epitaxial layer, an N-type highly-doped 4H-SiC substrate, an N-type low-doped SiC epitaxial layer and an N-type ohmic contact electrode from top to bottom, and the bottom-to-top structure of the upper PIN junction is identical to the top-to-bottom structure of the lower PIN junction. The alpha radioactive source layer is clamped between the P-type ohmic contact electrode of the upper PIN junction and the P-type ohmic contact electrode of the lower PIN junction, so that high-energy beta particles are fully utilized. The sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and the manufacturing method thereof have the advantages that the contact area of a radioactive source and a semiconductor is large, the nuclear raw material utilization rate and the energy harvesting rate are high, and the output voltage of the battery is large; the battery can supply electricity to a small circuit enduringly or to a polar region, a desert and other occasions.
Description
Technical field
The invention belongs to microelectronic, it is related to semiconductor device structure and preparation method, specifically a kind of carbonization
The PIN-type alpha irradiation battery of sandwich parallel extension GaN of silicon substrate and preparation method, can be used for the small electric such as minute mechanical and electrical system
Road and Aero-Space, deep-sea, polar region etc. need to power and unattended occasion for a long time.
Technical background
With people for low-power consumption, long-life, high reliability and small size power supply unit demand, and to nuke rubbish
The concern processing, minisize nuclear battery becomes to receive much concern.Minisize nuclear battery can be used to solve miniature tube due to its prominent feature
Pipeline robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.
Long-term powerup issue.And be expected to replace solaode and thermoelectric (al) type radioisotope battery, in space flight and aviation field
Solve the long-term powerup issue of micro-/Nano satellite, deep space unmanned probing device and ion propeller etc..
Nineteen fifty-three is studied by Rappaport and finds, using beta produced by isotope decay (β-Particle) ray
Electron-hole pair can be produced in quasiconductor, this phenomenon is then referred to as β-Voltaic Effect.Nineteen fifty-seven, Elgin-Kidde
First β-Voltaic Effect is used in power supply supply side, successfully produces first radioisotope micro battery β-Voltaic
Battery.From 2006, with the progress of semiconductor material with wide forbidden band SiC preparation and Technology, occur in that based on SiC's
The relevant report of radioisotope micro battery.In the application, the high energy particle utilization rate ratio due to exciting is relatively low, collection of energy for nuclear battery
Rate is low, limits the output voltage of battery.
As a kind of important third generation quasiconductor, people are more and more to the concern of GaN in recent years.Due to its forbidden band width
Degree is big, and thermal conductivity is high, and the device operating temperature of making and breakdown voltage are high.In addition, GaN material is considered as a kind of preferable always
Flouride-resistani acid phesphatase semi-conducting material, with the development of nuclear technology and space technology, GaN material and its device are used for radiating very strong
Work under conditions of exceedingly odious.
The Schottky junction type based on SiC being proposed by Zhang Lin, Guo Hui et al. is disclosed in Chinese patent CN 101325093A
Nuclear battery.Because in this schottky junction nuclear battery, schottky contact layer covers whole cell area, incoming particle reaches device table
Behind face, all can be stopped by schottky contact layer, only some particles can enter device inside, and enters the particle of depletion region
Just the output of battery can be contributed.Therefore, the nuclear battery projectile energy loss of this structure is big, energy conversion effect
Rate is relatively low.
Document " Demonstration of a 4H SiC betavoltaic cell " describes by USA New York
The C.I.Tomas of Cornell university, M.V.S.Chandrashekhar, Hui Li et al. propose carborundum PN junction formula nuclear power
Pond.The substrate that this structure adopts is the highly doped substrate of p-type, and immature in the existing process of its Grown epitaxial layer,
Therefore, it is easily introduced surface defect, device creepage is big, and energy conversion rate is relatively low.
Document " Demonstration of a tadiation resistant, hight efficiency SiC
Betavoltaic " describes by the C.J.Eiting of New Mexico Qynergy Corporation,
V.Krishnamoorthy and S.Rodgers, T.George et al. propose carborundum p-i-n junction formula nuclear battery jointly, such as Fig. 1
Shown.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, p-type Ohm contact electrode 6, the highly doped SiC layer of p-type 4, p-type
SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate of N-shaped 1 and N-type Ohm contact electrode 5.In this structure, only in depletion layer and
The raw carrier of irradiation in its neighbouring minority diffusion length can be collected.And, for avoiding Ohm contact electrode to stop
Incident ion, p-type Ohmic electrode is made in a corner of device so that giving birth to carrier from p-type Ohmic electrode irradiation farther out
Transport process is combined, is reduced energy transformation ratio, reduced the output current of battery.
Content of the invention
Present invention aims to the deficiency of above-mentioned prior art, a kind of PIN of sandwich parallel extension GaN is proposed
Type alpha irradiation battery and preparation method, to improve the utilization rate of αsource, thus improve output current and the output voltage of battery.
The technical scheme is that and be achieved in that：
One. the PIN-type alpha irradiation battery of sandwich parallel extension GaN of the present invention, including：PIN unit and αsource layer,
It is characterized in that：
Described PIN unit, is constituted using by upper and lower two PIN junction parallel connections；Upper PIN junction is followed successively by from top to bottom, N-type ohm
Contact electrode (5), N-type highly doped 4H-SiC substrate (1 '), doping content are 1 x 1015～3 x 1015cm-3N-type low-doped
SiC epitaxial layer (8), doping content are 1 x 1019～5.5 x 1019cm-3The highly doped GaN epitaxial layer of p-type (9) and p-type ohm
Contact electrode (6)；Lower PIN junction is followed successively by from top to bottom, and p-type Ohm contact electrode (6), doping content are 1 x 1019～5.5 x
1019cm-3The highly doped GaN epitaxial layer of p-type (9), doping content be 1 x 1015～3 x 1015cm-3The low-doped SiC of N-type outside
Prolong layer (8), N-type highly doped 4H-SiC substrate (1 ') and N-type Ohm contact electrode (5)；
Described αsource layer (7 '), is clipped between the p-type Ohm contact electrode (6) of upper and lower two PIN junction, right to realize
The making full use of of high-energyα-particle；
Preferably, the americium element that described αsource layer (7 ') is 241 using atomic mass, i.e. Am241.
Preferably, the plutonium element that described αsource layer (7 ') is 238 using atomic mass, i.e. Pu238.
Preferably, the thickness h of described αsource layer (7 ') meets h≤m, the height that wherein m is discharged by αsource
Energy average incident depth in αsource material for the alpha-particle, is Am for αsource241, its value is：M=7.5 μm, right
It is Pu in αsource238, its value is：M=10 μm.
Preferably, the thickness L of the low-doped epitaxial layer of described N-type (8) meets L >=g, wherein, g is released by αsource
Average incident depth in 4H-SiC for the high-energyα-particle put, is Am for αsource241, its value is：I=10 μm, right
It is Pu in αsource238, its value is：I=18.2 μm.
Preferably, the thickness of the highly doped GaN epitaxial layer of described p-type (9) is 0.1～0.2 μm.
Preferably, it is l x 10 that described substrate (1 ') adopts doping content18cm-3N-type 4H-SiC.
Two. the preparation method of the present invention comprises the following steps：
The first step, makes lower PIN junction：
1.1) clean：SiC sample is carried out, to remove surface contaminant；
1.2) grow the low-doped SiC epitaxial layer of N-type：Using chemical vapor deposition CVD SiC sample surface after cleaning
One layer of doping content of epitaxial growth is 1 x 1015～3 x 1015cm-3, thickness is 15～30 μm of N-type low-doped SiC extension
Layer；
1.3) the highly doped GaN epitaxial layer of growing P-type：Using chemical vapor deposition CVD in the low-doped SiC epitaxial layer of N-type
Epitaxial growth one layer of mg-doped concentration in surface is 1 x 1019～5.5 x 1019cm-3, thickness is that 0.1～0.2 μm of p-type is highly doped
Miscellaneous GaN epitaxial layer；
1.4) deposit metal ohmic contact electrode：Electron-beam vapor deposition method is utilized to deposit on p-type highly doped GaN epitaxial layer surface
A layer thickness is the metal Ti/Au of 50nm/250nm, as p-type Ohm contact electrode；Using electron-beam vapor deposition method in SiC substrate
The back side deposition thickness of non-extension is the Ni metal level of 300nm, as N-type Ohm contact electrode；In nitrogen atmosphere at 1100 DEG C
Short annealing 3 minutes.
Second step, repeat step 1.1) arrive step 1.4) PIN junction in making.
3rd step, using molecular plating the p-type Ohm contact electrode of lower PIN junction or on PIN junction p-type Ohmic contact electricity
Extremely upper plating a layer thickness is 3～6 μm of αsource.
4th step, using bonding method by the p-type Ohmic contact of the p-type Ohm contact electrode one side of upper PIN junction and lower PIN junction
Electrode one side presses together, and completes the making of the PIN-type alpha irradiation battery of sandwich parallel extension GaN.
The present invention compared with prior art has the advantage that：
1st, the present invention due to the energy gap using backing material 4H-SiC bigger than the energy gap of traditional Si, Flouride-resistani acid phesphatase is special
Property more preferably, the damage to device for the high-energyα-particle can be reduced, improve the running voltage of battery, extend the use longevity of battery simultaneously
Life；
2nd, the present invention is existed by the high-energyα-particle that the low-doped epitaxy layer thickness of the N-type of extension is discharged not less than αsource
Average incident depth in 4H-SiC, it is possible to reduce decay in the low-doped epitaxial layer of N-type for the high-energyα-particle is so that high energy α grain
Son concentrates on the space-charge region near the highly doped epitaxial layer of p-type and the low-doped epitaxial layer interface of N-type, improves energy transformation ratio；
3rd, the present invention due to the highly doped epitaxial layer of p-type thickness be 0.1～0.2 μm, the thickness of αsource layer is not more than α
Average incident depth in αsource material for the high-energyα-particle that radioactive source is discharged, can reduce high-energyα-particle high in p-type
Decay in doped epitaxial layer and αsource layer, improves collection of energy rate；
4th, the present invention is due to being clipped in αsource layer between the p-type Ohm contact electrode of upper and lower two PIN junction, compared to
Radioactive source is placed on the upper surface of battery by prior art, saves αsource material, improves the utilization rate of αsource, from
And improve the capacity usage ratio of battery；
5th, the present invention by the energy gap of the adopted GaN material of the highly doped GaN epitaxial layer of p-type bigger than SiC, Flouride-resistani acid phesphatase is special
Property more preferably, further increase the running voltage of battery；
6th, the present invention, due to placing in parallel for two PIN junction, improves the output voltage of battery.
Brief description
Fig. 1 is the schematic cross-section of existing PIN nuclear battery；
Fig. 2 is the schematic cross-section of the PIN-type alpha irradiation battery of sandwich parallel extension GaN of the present invention；
Fig. 3 is the schematic flow sheet of the PIN-type alpha irradiation battery that the present invention makes sandwich parallel extension GaN.
Specific embodiment
Reference Fig. 2, the irradiation battery of the present invention, including：PIN unit and αsource layer, PIN unit is by upper and lower two PIN
Knot is in parallel to be constituted；Upper PIN junction is followed successively by from top to bottom, N-type Ohm contact electrode 5, N-type highly doped 4H-SiC substrate 1 ', doping
Concentration is 1 x 1015～3 x 1015cm-3The low-doped SiC epitaxial layer of N-type 8, doping content be 1 x 1019～5.5 x
1019cm-3The highly doped GaN epitaxial layer of p-type 9 and p-type Ohm contact electrode 6；Lower PIN junction is followed successively by from top to bottom, p-type ohm
Contact electrode 6, doping content are 1 x 1019～5.5 x 1019cm-3The highly doped GaN epitaxial layer of p-type 9, doping content be 1 x
1015～3 x 1015cm-3The low-doped SiC epitaxial layer of N-type 8, N-type highly doped 4H-SiC substrate 1 ' and N-type Ohm contact electrode
5；αsource layer 7 ' is clipped between the p-type Ohm contact electrode 6 of upper and lower two PIN junction, and its thickness h meets h≤m, and wherein m is α
Average incident depth in αsource material for the high-energyα-particle that radioactive source is discharged, is Am for αsource241, it takes
It is worth and be：M=7.5 μm, be Pu for αsource238, its value is：M=10 μm.
Battery in working order under, the high-energyα-particle radiating from αsource layer 7 ' passes through the p-type of upper and lower two PIN junction
Ohm contact electrode 6 is injected into the highly doped GaN epitaxial layer of p-type 9 and the space charge of the low-doped SiC epitaxial layer of N-type 8 near interface
Area, and then excite carrier, form output current.
With reference to Fig. 3, the method that the present invention makes the PIN-type alpha irradiation battery of sandwich parallel extension GaN provides following three
Embodiment：
Embodiment 1, preparing αsource is Am241, αsource thickness degree is the PIN of 6 μm of sandwich parallel extension GaN
Type alpha irradiation battery.
Step 1:Make lower PIN junction.
(1.1) clean 4H-SiC print, to remove surface contaminant, such as shown in Fig. 3 (a).
(1.1.1) doping content is l x 1018cm-3Doped n-type 4H-SiC substrate print in NH4OH+H2O2Examination
Sample 10min is soaked in agent, takes out post-drying, to remove sample surfaces organic remains；
(1.1.2) the 4H-SiC print removing after the organic remains of surface is reused HCl+H2O2Reagent soaks sample
10min, takes out post-drying, to remove ionic contamination.
(1.2) the low-doped SiC epitaxial layer of epitaxial growth N-type, such as shown in Fig. 3 (b).
The n-type doping extension of chemical vapor deposition CVD method epitaxial growth N doping is utilized on SiC sample after cleaning
Layer.Its process conditions is：Epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure
Hydrogen, magazine source is liquid nitrogen, and obtaining nitrogen doped concentration is 1 x 1015cm-3, thickness is outside 15 μm of the low-doped SiC of N-type
Prolong layer.
(1.3) the highly doped GaN epitaxial layer of epitaxial growth p-type, such as shown in Fig. 3 (c).
(1.3.1) sample growing after the low-doped SiC epitaxial layer of N-type is put in chemical vapor deposition CVD stove, in H2Atmosphere
It is heated to 1100 DEG C under enclosing, keep 10min；
(1.3.2) pressure of reative cell is set to 2x104Pa, uses N2And H2Mixed gas as carrier gas, indoor to reaction
It is passed through flow and be respectively 52.3 μm of ol min-1With 0.035mol min-1Trimethyl aluminium and NH3, in low-doped SiC epitaxial layer
The thick AlN of upper growth 60nm；
(1.3.3) reative cell is cooled to 1050 DEG C, is passed through flow to reaction interior and is respectively 6.5 μm of ol min-1、
8.93mmol·min-1With 0.18 μm of ol min-1Trimethyl gallium, NH3And CP2Mg, completing mg-doped concentration is 1 x
1019cm-3, thickness is 0.1 μm of the highly doped GaN epitaxial layer of p-type.
(1.4) deposit Ohm contact electrode, such as shown in Fig. 3 (d).
(1.4.1) RCA standard cleaning is carried out to the SiC sample completing after the growth of p-type highly doped GaN epitaxial layer；
(1.4.2) print after cleaning is put on the microscope slide in electron beam evaporation deposition machine, adjustment microscope slide is to target
The distance of material is 50cm, and reaction chamber pressure is evacuated to 5 × 10-4Pa, regulation line is 40mA, highly doped in the p-type of SiC sample
Surface deposition a layer thickness of GaN epitaxial layer is the Ti/Au metal level of 50nm/250nm, as p-type Ohm contact electrode；
(1.4.3) utilize electron-beam vapor deposition method, the Ni metal being 300nm in the back side deposition thickness of the non-extension of substrate Si C
Layer, as N-type Ohm contact electrode；
(1.4.4) at 1100 DEG C, short annealing 3 minutes in nitrogen atmosphere.
Step 2：PIN junction in making.
Repeat step (1.1) arrives step (1.4), obtains PIN junction.
Step 3：Using molecular plating, the αsource that a layer thickness is 6 μm is plated on the p-type Ohm contact electrode of lower PIN junction
Am241, such as shown in Fig. 3 (e).
Step 4：Using bonding method, by the p-type Ohm contact electrode of the p-type Ohm contact electrode of upper PIN junction and lower PIN junction
On αsource lamination be combined, obtain the PIN-type alpha irradiation battery of sandwich parallel extension GaN, shown in such as Fig. 3 (f).
Embodiment 2, preparing αsource is Am241, αsource thickness degree is the PIN of 4 μm of sandwich parallel extension GaN
Type alpha irradiation battery.
Step one:Make lower PIN junction.
1a) clean 4H-SiC print, to remove surface contaminant, such as Fig. 3 (a).
This step is identical with the step (1.1) of embodiment 1.
1b) the low-doped SiC epitaxial layer of epitaxial growth N-type, such as Fig. 3 (b).
The n-type doping extension of chemical vapor deposition CVD method epitaxial growth N doping is utilized on SiC sample after cleaning
Layer.Its process conditions is：Epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure
Hydrogen, magazine source is liquid nitrogen, and completing nitrogen doped concentration is 2 x 1015cm-3, thickness is outside 25 μm of the low-doped SiC of N-type
Prolong the growth of layer.
1c) the highly doped GaN epitaxial layer of epitaxial growth p-type, such as Fig. 3 (c).
1c.1) sample growing after the low-doped SiC epitaxial layer of N-type is put in chemical vapor deposition CVD stove, in H2Atmosphere
Under be heated to 1100 DEG C, keep 10min；
1c.2) pressure of reative cell is set to 2x104Pa, uses N2And H2Mixed gas as carrier gas, indoor logical to reaction
Inbound traffics are respectively 52.3 μm of ol min-1With 0.035mol min-1Trimethyl aluminium and NH3, in low-doped SiC epitaxial layer
The thick AlN of growth 60nm；
1c.3) reative cell is cooled to 1050 DEG C, is passed through flow to reaction interior and is respectively 6.5 μm of ol min-1、
8.93mmol·min-1With 0.18 μm of ol min-1Trimethyl gallium, NH3And CP2Mg, completing mg-doped concentration is 2 x
1019cm-3, thickness is 0.15 μm of the highly doped GaN epitaxial layer of p-type.
1d) deposit Ohm contact electrode, such as Fig. 3 (d).
This step is identical with the step (1.4) of embodiment one.
Step 2：PIN junction in making.
Repeat step 1a) arrive step 1d), obtain PIN junction.
Step 3：Using molecular plating, the αsource that a layer thickness is 4 μm is plated on the p-type Ohm contact electrode of upper PIN junction
Am241, such as Fig. 3 (e).
Step 4：Using bonding method, by the P of the αsource layer on the p-type Ohm contact electrode of upper PIN junction and lower PIN junction
Type Ohm contact electrode presses together, and obtains the PIN-type alpha irradiation battery of sandwich parallel extension GaN, such as Fig. 3 (f).
Embodiment 3, preparing αsource is Pu238, αsource thickness degree is the PIN of 3 μm of sandwich parallel extension GaN
Type alpha irradiation battery.
Step A:PIN junction in making.
(A1) clean 4H-SiC print, to remove surface contaminant, such as Fig. 3 (a).
This step is identical with the step (1.1) of embodiment 1.
(A2) the N-type low-mix of chemical vapor deposition CVD method epitaxial growth N doping is utilized on SiC sample after cleaning
Miscellaneous SiC epitaxial layer.Its process conditions is：Epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane,
Carrier gas is pure hydrogen, and magazine source is liquid nitrogen.Obtaining nitrogen doped concentration is 3 x 1015cm-3, thickness is 30 μm of N-type low-mix
Miscellaneous SiC epitaxial layer such as Fig. 3 (b).
(A3) sample growing after the low-doped SiC epitaxial layer of N-type is put in chemical vapor deposition CVD stove, in H2Atmosphere
Under be heated to 1100 DEG C, keep 10min；Again the pressure of reative cell is set to 2x104Pa, uses N2And H2Mixed gas as load
Gas, is passed through flow to reaction interior and is respectively 52.3 μm of ol min-1With 0.035mol min-1Trimethyl aluminium and NH3, low
The thick AlN of growth 60nm in doping SiC epitaxial layer；Then reative cell is cooled to 1050 DEG C, is passed through flow to reaction interior and divides
Wei not 6.5 μm of ol min-1、8.93mmol·min-1With 0.18 μm of ol min-1Trimethyl gallium, NH3And CP2Mg, completes magnesium
Doping content is 5.5 x 1019cm-3, thickness is 0.2 μm p-type highly doped GaN epitaxial layer such as Fig. 3 (c).
(A4) Ohm contact electrode, such as Fig. 3 (d) are deposited.
This step is identical with the step (1.4) of embodiment one.
Step B：PIN junction in making.
Repeat step (A1) arrives step (A4), obtains PIN junction.
Step C：P-type Ohm contact electrode using the p-type Ohm contact electrode in upper PIN junction for the molecular plating and lower PIN junction
Upper plating a layer thickness is 3 μm of αsource Pu238, such as Fig. 3 (e).
Step D：P-type Ohmic contact electricity by the αsource layer on the p-type Ohm contact electrode of upper PIN junction and lower PIN junction
The αsource lamination extremely gone up is combined, and obtains the PIN-type alpha irradiation battery of sandwich parallel extension GaN, such as Fig. 3 (f).
Claims (6)
1. a kind of PIN-type alpha irradiation battery of sandwich parallel extension GaN, including：PIN unit and αsource layer, its feature exists
In：
Described PIN unit, is constituted using by upper and lower two PIN junction parallel connections；Upper PIN junction is followed successively by from top to bottom, N-type Ohmic contact
Electrode (5), N-type highly doped 4H-SiC substrate (1 '), doping content are 1x1015～3x1015cm-3N-type low-doped SiC extension
Layer (8), doping content are 1x1019～5.5x1019cm-3The highly doped GaN epitaxial layer of p-type (9) and p-type Ohm contact electrode
(6)；Lower PIN junction is followed successively by from top to bottom, and p-type Ohm contact electrode (6), doping content are 1x1019～5.5x1019cm-3P
The highly doped GaN epitaxial layer of type (9), doping content are 1x1015～3x1015cm-3The low-doped SiC epitaxial layer of N-type (8), N-type high
Doped 4 H-SiC substrate (1 ') and N-type Ohm contact electrode (5)；
Described αsource layer (7 '), is clipped between the p-type Ohm contact electrode (6) of upper and lower two PIN junction, to realize to high energy α
The making full use of of particle；
It is lx10 that described substrate (1 ') adopts doping content18cm-3N-type 4H-SiC.
2. battery according to claim 1 it is characterised in that αsource layer (7 ') be 241 using atomic mass americium unit
Element, i.e. Am241.
3. battery according to claim 1 it is characterised in that αsource layer (7 ') be 238 using atomic mass plutonium unit
Element, i.e. Pu238.
4. the battery according to claim 1 or 2 or 3 is it is characterised in that the thickness h of αsource layer (7 ') meets h≤m, its
Average incident depth in αsource material for the high-energyα-particle that middle m is discharged by αsource, is Am for αsource241
, its value is：M=7.5 μm, be Pu for αsource238, its value is：M=10 μm.
5. battery according to claim 1 is it is characterised in that the thickness of the highly doped GaN epitaxial layer of p-type (9) is 0.1～0.2
μm.
6. a kind of preparation method of the PIN-type alpha irradiation battery of sandwich parallel extension GaN, comprises the following steps：
(1) make lower PIN junction：
1.1) clean：SiC sample is carried out, to remove surface contaminant；
1.2) grow the low-doped SiC epitaxial layer of N-type：Using chemical vapor deposition CVD SiC sample surface extension after cleaning
One layer of doping content of growth is 1x1015～3x1015cm-3, thickness is 15～30 μm of the low-doped SiC epitaxial layer of N-type；
1.3) the highly doped GaN epitaxial layer of growing P-type：The sample growing after the low-doped SiC epitaxial layer of N-type is put into chemical gaseous phase form sediment
In long-pending CVD stove, in H2It is heated to 1100 DEG C under atmosphere and keep 10min with clean surface；It is passed through flow to reaction interior again to divide
Wei not 52.3 μm of ol min-1、0.035mol·min-1Trimethyl aluminium and NH3, 60nm is grown on low-doped SiC epitaxial layer
Thick AlN；Then reative cell is cooled to 1050 DEG C, is passed through flow to reaction interior and is respectively 6.5 μm of ol min-1、
8.93mmol·min-1、0.18μmol·min-1Trimethyl gallium, NH3And CP2Mg, completing mg-doped concentration is 1x1019~
5.5x1019cm-3, thickness is the growth of 0.1～0.2 μm of the highly doped GaN epitaxial layer of p-type；
1.4) deposit Ohm contact electrode：Deposit a layer thickness on p-type highly doped GaN epitaxial layer surface using electron-beam vapor deposition method
Metal Ti/Au for 50nm/200nm, as p-type Ohm contact electrode；Using electron-beam vapor deposition method in the non-extension of SiC substrate
Back side deposition thickness is the Ni metal level of 300nm, as N-type Ohm contact electrode；Short annealing 3 in nitrogen atmosphere at 1100 DEG C
Minute；
(2) repeat step 1.1) arrive step 1.4) PIN junction in making；
(3) utilize molecular plating lower PIN junction p-type Ohm contact electrode or above PIN junction p-type Ohm contact electrode on plate
A layer thickness is 3～6 μm of αsource；
(4) utilize bonding method by the p-type Ohm contact electrode of upper PIN junction when p-type Ohm contact electrode with lower PIN junction
Press together, complete the making of the PIN-type alpha irradiation battery of sandwich parallel extension GaN.
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| CN104051041A (en) | 2014-09-17 |
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