CN104064245A - Epitaxy GaN PIN structure alpha irradiation battery and preparation method thereof - Google Patents
Epitaxy GaN PIN structure alpha irradiation battery and preparation method thereof Download PDFInfo
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- CN104064245A CN104064245A CN201410300662.0A CN201410300662A CN104064245A CN 104064245 A CN104064245 A CN 104064245A CN 201410300662 A CN201410300662 A CN 201410300662A CN 104064245 A CN104064245 A CN 104064245A
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Abstract
The invention discloses an epitaxy GaN PIN structure alpha irradiation battery and a preparation method thereof. At present, an alpha irradiation battery has problems of low energy transformation ratio and low output power, and the invention is mainly used to solve the problems. The implementation of the epitaxy GaN PIN structure alpha irradiation battery comprises the following step: an N-type lightly-doped SiC epitaxial layer and a P-type highly-doped GaN epitaxial layer are grown on a cleaned 4H-SiC substrate successively in the epitaxial growth manner; a P-type Ti/Au ohmic contact electrode is then deposited onto the P-type highly-doped GaN epitaxial layer, and an Ni ohmic contact electrode is deposited onto the back surface of the SiC substrate which does not undergo the epitaxy growth; and then, a trench window is formed in the P-type Ti/Au electrode through lithography, and trenches are etched; and finally, an alpha radiation source is placed into each trench to obtain the epitaxy GaN PIN structure alpha irradiation battery. According to the invention, the fabricated battery has advantages of large radiation source and semiconductor contact area, high nuclear raw material utilization rate and energy collection rate, and large battery output current and voltage, and the battery can be used to supply power to a small circuit in a lasting manner or supply power in unattended occasions which need to be powered for a long time.
Description
Technical field
The invention belongs to microelectronic, relate to semiconductor device structure and preparation method, specifically PIN structure alpha irradiation battery of a kind of silicon carbide-based extension GaN and preparation method thereof, can be used for power supply and the unattended occasion for a long time such as the small circuit such as minute mechanical and electrical system and Aero-Space, deep-sea, polar region.
Technical background
Along with the demand of people for low-power consumption, long-life, high reliability and small size power-supply unit, and the concern to nuclear waste disposal, minisize nuclear battery becomes and receives much concern.Minisize nuclear battery is because its outstanding feature can be used to solve the long-term powerup issue of robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.And be expected to replace solar cell and thermoelectric (al) type radioisotope battery, at space flight and aviation field, solve micro-/receive the long-term powerup issue of satellite, deep space unmanned probing device and ion propeller etc.
Nineteen fifty-three, beta (β-Particle) radial energy that utilizes isotope decay to produce produced electron-hole pair in semiconductor by Rappaport research discovery, and this phenomenon is called as β-VoltaicEffect.Nineteen fifty-seven, first Elgin-Kidde is used in β-VoltaicEffect power supply supply side, successfully produces first radioisotope micro battery β-VoltaicBattery.
As a kind of important third generation semiconductor, people are more and more to the concern of GaN in recent years.Because its energy gap is large, thermal conductivity is high, and the device working temperature of making is high, and voltage breakdown is high.In addition, GaN material is considered to a kind of desirable anti-irradiation semiconductor material always, and along with the development of nuclear technology and space technology, GaN material and device thereof are used to work under the very strong exceedingly odious condition of radiation.
The Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose is disclosed by Zhang Lin in Chinese patent CN101325093A.Because schottky contact layer in this schottky junction nuclear battery covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only has part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery.Therefore, the loss of the nuclear battery projectile energy of this structure is large, and energy conversion efficiency is lower.
Document " Demonstration of a tadiation resistant; hight efficiency SiC betavoltaic " has been introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy and S.Rodgers, the people such as T.George have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 1.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, P type Ohm contact electrode 6, the highly doped SiC layer 4 of P type, P type SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate 1 of N-shaped and N-type Ohm contact electrode 5.In this structure, only have the raw charge carrier of irradiation in depletion layer and in a near minority diffusion length to be collected.And, for avoiding Ohm contact electrode to stop incident ion, P type Ohmic electrode is made in to a corner of device, make from P type Ohmic electrode the raw charge carrier of the irradiation away from transport process by compound, reduce energy transformation ratio, reduced the output current of battery.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, PIN structure alpha irradiation battery of a kind of extension GaN and preparation method thereof is proposed, the barrier effect of high-energyα-particle αsource being given off with elimination metal electrode, increase αsource and semi-conductive contact area simultaneously, improve the utilization factor of αsource, thereby improve output current and the output voltage of battery.
Technical scheme of the present invention is achieved in that
One. the PIN structure alpha irradiation battery of extension GaN of the present invention, comprise: PIN knot and αsource, PIN knot is followed successively by from bottom to top, N-type Ohm contact electrode 5, the highly doped 4H-SiC substrate 1 of N-type, the low-doped SiC epitaxial loayer 2 of N-type, the highly doped GaN epitaxial loayer 3 of P type and P type Ohm contact electrode 4, is characterized in that:
In described PIN knot, be provided with at least two grooves 6;
Described αsource 7 is placed in groove 6, to realize making full use of high-energyα-particle.
As preferably, described αsource 7 adopts the americium element that atomic masses are 241, i.e. Am
241.
As preferably, described αsource 7 adopts the plutonium element that atomic masses are 238, i.e. Pu
238.
As preferably, the degree of depth h of described groove 6 meets m+q<h<m+n+q, and wherein m is the thickness of the highly doped epitaxial loayer 3 of P type, and n is the thickness of the low-doped epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4.
As preferably, the width L of described groove 6 meets L≤2g, and wherein, g is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in αsource, for αsource, is Am
241, its value is: g=7.5 μ m is Pu for αsource
238, its value is: g=10 μ m.
As preferably, the spacing d of described adjacent two grooves 6 meets d>=i, and wherein, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in 4H-SiC, for αsource, is Am
241, its value is: i=10 μ m is Pu for αsource
238, its value is: i=18.2 μ m.
As preferably, it is lx10 that described adjacent substrate 1 adopts doping content
18cm
-3n-type 4H-SiC, the low-doped SiC epitaxial loayer of N-type (2) for nitrogen doped concentration be 1x10
15～2x10
15cm
-34H-SiC, the highly doped GaN epitaxial loayer of P type (3) for magnesium doping content be 1x10
19～5x10
19cm
-3gaN.
Two. preparation method of the present invention comprises the following steps:
1) clean: SiC print is cleaned, to remove surface contaminant;
2) the low-doped SiC epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10
15～2x10
15cm
-3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5～10 μ m;
3) the highly doped GaN epitaxial loayer of growing P-type: the sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 ℃ and keep 10min with clean surface; To passing into flow in reaction chamber, be respectively 52.3 μ molmin again
-1, 0.035molmin
-1trimethyl aluminium and NH
3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin
-1, 8.93mmolmin
-1, 0.18 μ molmin
-1trimethyl gallium, NH
3and CP
2mg, completing magnesium doping content is 1x10
19～5x10
19cm
-3, thickness is the highly doped GaN epitaxial loayer of the P type of 1～2 μ m;
4) deposit P type Metal Contact electrode: utilize in the highly doped GaN epi-layer surface of P type metal Ti/Au that electron-beam vapor deposition method deposit a layer thickness is 100nm/400nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 ℃;
5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ti/Au of deposit layer on surface of metal spin coating one deck photoresist, recycling reticle is carried out electron beam exposure to photoresist, forms corrosion window; Ti/Au metal level to corrosion window place corrodes, and exposes the highly doped GaN epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped GaN epitaxial loayer of P type exposing at etching groove window is 6.5～12 μ m, and width is 5～14 μ m, and spacing is at least two grooves of 12～25 μ m;
7) place αsource: the method that adopts deposit or smear, in groove, place αsource, obtain the PIN structure alpha irradiation battery of extension GaN.
The present invention compared with prior art tool has the following advantages:
1. the present invention is placed in groove by αsource, and the high-energyα-particle that αsource is produced is directly injected the space charge region of PIN knot, has reduced the energy loss of high-energyα-particle, thereby has improved collection of energy rate;
2. the present invention, because groove width is not more than the twice of high-energyα-particle average incident degree of depth in αsource material that αsource discharges, has significantly reduced the energy attenuation of high-energyα-particle in αsource inside, has improved collection of energy rate;
3. the present invention is owing to adopting the energy gap of backing material 4H-SiC larger than the energy gap of traditional Si, and radiation-resisting performance is better, can reduce the damage of high-energyα-particle to device, has improved the operating voltage of battery, has extended the serviceable life of battery simultaneously;
4. the present invention is because the energy gap of the highly doped epitaxial loayer GaN of the P type material adopting is larger than the energy gap of traditional Si C, and radiation-resisting performance is better, has further improved the operating voltage of battery.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of existing PIN nuclear battery;
Fig. 2 is the schematic cross-section of the PIN structure alpha irradiation battery of extension GaN of the present invention;
Fig. 3 is the schematic flow sheet that the present invention makes the PIN structure alpha irradiation battery of extension GaN.
Embodiment
With reference to Fig. 2, irradiation battery of the present invention, comprise: PIN knot, groove 6 and αsource 7, PIN knot is followed successively by from bottom to top, N-type Ohm contact electrode 5, the highly doped 4H-SiC substrate 1 of N-type, the low-doped SiC epitaxial loayer 2 of N-type, the highly doped GaN epitaxial loayer 3 of P type and P type Ohm contact electrode 4.Wherein, the low-doped SiC epitaxial loayer 2 of N-type grows on the silicon face of the highly doped 4H-SiC substrate 1 of N-type, the highly doped GaN epitaxial loayer 3 of P type grows on the low-doped SiC epitaxial loayer 2 of N-type, P type Ohm contact electrode 4 is deposited on the highly doped GaN epitaxial loayer 3 of P type, adopts metal Ti/Au, and its thickness is 100nm/400nm, back side N-type Ohm contact electrode 5 is deposited on the dorsal part of the highly doped SiC substrate 1 of N-type, adopt metal Ni, its thickness is 300nm, forms PIN knot; In PIN knot, be provided with at least two grooves 6, its degree of depth h meets m+q<h<m+n+q, m is the thickness of the highly doped epitaxial loayer 3 of P type, n is the thickness of the low-doped epitaxial loayer 2 of N-type, q is the thickness of P type Ohm contact electrode 4, its width L meets L≤2g, and g is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in αsource, for αsource, is Am
241, its value is: g=7.5 μ m is Pu for αsource
238, its value is: g=10 μ m, and the spacing d of adjacent two grooves 6 meets d>=i, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in 4H-SiC, for αsource, is Am
241, its value is: i=10 μ m is Pu for αsource
238, its value is: i=18.2 μ m; αsource 7 is placed in groove 6.
Battery in working order under, the most of high-energyα-particle radiating from αsource is directly injected into the space charge region of the highly doped GaN epitaxial loayer 3 of P type and low-doped SiC epitaxial loayer 2 near interfaces of N-type, and then excites charge carrier, forms output current.
With reference to Fig. 3, the method that the present invention makes the PIN structure alpha irradiation battery of extension GaN provides following three embodiment:
Embodiment 1, and preparing αsource is Am
241, there is the PIN structure alpha irradiation battery of the extension GaN of two grooves.
Step 1: clean 4H-SiC print, to remove surface contaminant, as shown in Fig. 3 (a).
(1.1) by doping content, be lx10
18cm
-3highly doped N-shaped 4H-SiC substrate print at NH
4oH+H
2o
2reagent soaks sample 10min, takes out post-drying, to remove sample surfaces organic remains;
(1.2) the 4H-SiC print of removing after surperficial organic remains is re-used to HCl+H
2o
2reagent soaks sample 10min, takes out post-drying, to remove ionic contamination.
Step 2: the low-doped SiC epitaxial loayer of epitaxial growth N-type, as shown in Fig. 3 (b).
On SiC print after cleaning, utilizing chemical vapor deposition CVD method epitaxial growth thickness is 5 μ m, the low-doped SiC epitaxial loayer of N-type of nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x10
15cm
-3in epitaxial loayer.
Step 3: the highly doped GaN epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
(3.1) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 ℃, keep 10min;
(3.2) pressure of reaction chamber is made as to 2x10
4pa, uses N
2and H
2mixed gas as carrier gas, to passing into flow in reaction chamber, be respectively 52.3 μ molmin
-1and 0.035molmin
-1trimethyl aluminium and NH3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer;
(3.3) reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin
-1, 8.93mmolmin
-1with 0.18 μ molmin
-1trimethyl gallium, NH
3and CP
2mg, completing magnesium doping content is 1x10
19cm
-3, thickness is the highly doped GaN epitaxial loayer of the P type of 1 μ m.
Step 4: deposit Ohm contact electrode, as shown in Fig. 3 (d).
(4.1) print completing after the highly doped GaN outer layer growth of P type is carried out to RCA standard cleaning;
(4.2) print after cleaning is put on the microslide of electron beam evaporation deposition machine, adjustment microslide is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 * 10
-4pa, adjusting line is 40mA, the metal Ti/Au that is 100nm/400nm in surface deposition a layer thickness of the highly doped GaN epitaxial loayer of the P of SiC print type;
(4.3) utilize electron-beam vapor deposition method, at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm;
At (4.4) 1100 ℃, in nitrogen atmosphere, short annealing is 3 minutes.
Step 5: carve structure graph window on the Ti/Au metal level of SiC extension one outgrowth, as shown in Fig. 3 (e).
(5.1) spin coating one deck photoresist on metal Ti/Au surface of SiC extension one outgrowth, is made into reticle according to the position of two grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window;
(5.2) utilize reactive ion technique etching sheet metal Ti/Au, reacting gas adopts oxygen, exposes the highly doped GaN epitaxial loayer of P type, obtains the etching window of P type Ohm contact electrode and groove;
Step 6: etching groove, as shown in Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 6.5 μ m, and width is 5 μ m, and spacing is two grooves of 12 μ m.
Step 7: place αsource, as shown in Fig. 3 (g).
The method that adopts deposit or smear is placed αsource Am in each groove
241, obtain the PIN structure alpha irradiation battery of extension GaN.
Embodiment 2, and preparing αsource is Am
241, there is the PIN structure alpha irradiation battery of the extension GaN of seven grooves.
Step 1: clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step 1 of embodiment 1.
Step 2: the low-doped SiC epitaxial loayer of epitaxial growth N-type, as Fig. 3 (b).
On SiC print after cleaning, utilizing chemical vapor deposition CVD method epitaxial growth thickness is 8 μ m, the N-type doped epitaxial layer of nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and completing nitrogen doped concentration is 1.5x10
15cm
-3the growth of N-type epitaxial loayer.
Step 3: the highly doped GaN epitaxial loayer of epitaxial growth P type, as Fig. 3 (c).
(3.1) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 ℃, keep 10min;
(3.2) pressure of reaction chamber is made as to 2x10
4pa, uses N
2and H
2mixed gas as carrier gas, to passing into flow in reaction chamber, be respectively 52.3 μ molmin
-1and 0.035molmin
-1trimethyl aluminium and NH
3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer;
(3.3) reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin
-1, 8.93mmolmin
-1with 0.18 μ molmin
-1trimethyl gallium, NH
3and CP
2mg, completing magnesium doping content is 3x10
19cm
-3, thickness is the highly doped GaN epitaxial loayer of the P type of 1.5 μ m.
Step 4: deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step 4 of embodiment mono-.
Step 5: carve structure graph window on the Ti/Au metal level of SiC extension one outgrowth, as Fig. 3 (e).
(5.1) spin coating one deck photoresist on metal Ti/Au surface of SiC extension one outgrowth, is made into reticle according to the position of seven grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window;
(5.2) utilize reactive ion technique etching sheet metal Ti/Au, reacting gas adopts oxygen, exposes the highly doped GaN epitaxial loayer of P type, obtains the etching window of P type Ohm contact electrode and groove.
Step 6: etching groove, as Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving for the degree of depth is 10 μ m, and width is 10 μ m, and spacing is seven grooves of 20 μ m;
Step 7: place αsource, as Fig. 3 (g).
This step is identical with the step 7 of embodiment mono-.
Embodiment 3, and preparing αsource is Pu
238, there is the PIN structure alpha irradiation battery of the extension GaN of 14 grooves.
Steps A: clean 4H-SiC print, to remove surface contaminant, this step is identical with the step 1 of embodiment 1, as Fig. 3 (a).
Step B: utilizing chemical vapor deposition CVD method epitaxial growth thickness on the SiC print after cleaning is 10 μ m, the N-type doped epitaxial layer of nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen.The nitrogen doped concentration obtaining is 2x10
15cm
-3n-type epitaxial loayer as Fig. 3 (b).
Step C: the sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 ℃, keep 10min; Again the pressure of reaction chamber is made as to 2x10
4pa, uses N
2and H
2mixed gas as carrier gas, to passing into flow in reaction chamber, be respectively 52.3 μ molmin
-1and 0.035molmin
-1trimethyl aluminium and NH
3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin
-1, 8.93mmolmin
-1with 0.18 μ molmin
-1trimethyl gallium, NH
3and CP
2mg, completing magnesium doping content is 5x10
19cm
-3, thickness is that the highly doped GaN epitaxial loayer of the P type of 2 μ m is as Fig. 3 (c).
Step D: deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step 4 of embodiment mono-.
Step e: spin coating one deck photoresist on metal Ti/Au surface of SiC extension one outgrowth, according to the position of 14 grooves of battery, be made into reticle, with electron beam, photoresist is exposed, form corrosion window; Then utilize reactive ion technique etching sheet metal Ti/Au, reacting gas adopts oxygen, exposes the highly doped GaN epitaxial loayer of P type, obtains the etching window of P type contact electrode and groove as Fig. 3 (e).
Step F: utilize inductively coupled plasma ICP lithographic technique, etching the degree of depth on the highly doped GaN epitaxial loayer of P type exposing at etching groove window is 12 μ m, and width is 14 μ m, spacing is that 14 grooves of 25 μ m are as Fig. 3 (f).
Step G: the method that adopts deposit or smear, in each groove, place αsource Pu
238, obtain the PIN structure alpha irradiation battery of extension GaN as Fig. 3 (g).
Claims (8)
1. the PIN structure alpha irradiation battery of an extension GaN, comprise: PIN knot and αsource, PIN knot is followed successively by from bottom to top, N-type Ohm contact electrode (5), the highly doped 4H-SiC substrate of N-type (1), the low-doped SiC epitaxial loayer of N-type (2), the highly doped GaN epitaxial loayer of P type (3) and P type Ohm contact electrode (4), is characterized in that:
In described PIN knot, be provided with at least two grooves (6);
Described αsource (7) is placed in groove (6), to realize making full use of high-energyα-particle.
2. battery according to claim 1, is characterized in that αsource (7) adopts the americium element that atomic mass is 241, i.e. Am
241.
3. battery according to claim 1, is characterized in that αsource (7) adopts the plutonium element that atomic mass is 238, i.e. Pu
238.
4. battery according to claim 1, the degree of depth h that it is characterized in that groove (6) meets m+q<h<m+n+q, wherein m is the thickness of the highly doped epitaxial loayer of P type (3), n is the thickness of the low-doped epitaxial loayer of N-type (2), and q is the thickness of P type Ohm contact electrode (4).
5. according to the battery described in claim 1 or 2 or 3, it is characterized in that the width L of groove (6) meets L≤2g, wherein, g is the average incident degree of depth of the high-energyα-particle that discharges of αsource (7) in αsource, for αsource, is Am
241, its value is: g=7.5 μ m is Pu for αsource
238, its value is: g=10 μ m.
6. battery according to claim 1, is characterized in that the spacing d of adjacent two grooves (6) meets d>=i, wherein, for αsource, is Am
241, its value is: i=10 μ m is Pu for αsource
238, its value is: i=18.2 μ m.
7. battery according to claim 1, is characterized in that it is lx10 that substrate (1) adopts doping content
18cm
-3n-type 4H-SiC, the low-doped SiC epitaxial loayer of N-type (2) for nitrogen doped concentration be 1x10
15～2x10
15cm
-34H-SiC, the highly doped GaN epitaxial loayer of P type (3) for magnesium doping content be 1x10
19～5x10
19cm
-3gaN.
8. a preparation method for the PIN structure alpha irradiation battery of extension GaN, comprises the following steps:
1) clean: SiC print is cleaned, to remove surface contaminant;
2) the low-doped SiC epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck nitrogen doped concentration of chemical vapor deposition CVD method after cleaning is 1x10
15～2x10
15cm
-3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5～10 μ m;
3) the highly doped GaN epitaxial loayer of growing P-type: the sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 ℃ and keep 10min with clean surface; To passing into flow in reaction chamber, be respectively 52.3 μ molmin again
-1, 0.035molmin
-1trimethyl aluminium and NH3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin
-1, 8.93mmolmin
-1, 0.18 μ molmin
-1trimethyl gallium, NH
3and CP
2mg, completing magnesium doping content is 1x10
19～5x10
19cm
-3, thickness is the highly doped GaN epitaxial loayer of the P type of 1～2 μ m;
4) depositing metal contact electrode: utilize in the highly doped GaN epi-layer surface of P type metal Ti/Au that electron-beam vapor deposition method deposit a layer thickness is 100nm/400nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 ℃;
5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ti/Au of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ti/Au metal level to corrosion window place corrodes, and exposes the highly doped GaN epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped GaN epitaxial loayer of P type exposing at etching groove window is 6.5～12 μ m, and width is 5～14 μ m, and spacing is at least two grooves of 12～25 μ m;
7) place αsource: the method that adopts deposit or smear, in groove, place αsource, obtain the PIN structure alpha irradiation battery of extension GaN.
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