CN104051048A - Epitaxy GaN parallel type PIN type alpha irradiation battery and manufacturing method thereof - Google Patents

Epitaxy GaN parallel type PIN type alpha irradiation battery and manufacturing method thereof Download PDF

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CN104051048A
CN104051048A CN201410300663.5A CN201410300663A CN104051048A CN 104051048 A CN104051048 A CN 104051048A CN 201410300663 A CN201410300663 A CN 201410300663A CN 104051048 A CN104051048 A CN 104051048A
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pin
epitaxial loayer
αsource
contact electrode
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郭辉
赵亚秋
王悦湖
张艺蒙
张玉明
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Xidian University
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Xidian University
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Abstract

The invention discloses an epitaxy GaN parallel type PIN type alpha irradiation battery and a manufacturing method of the epitaxy GaN parallel type PIN type alpha irradiation battery. The epitaxy GaN parallel type PIN type alpha irradiation battery mainly solves the problem that the current nuclear battery energy conversion rate and output power are low and comprises an upper PIN node, a lower PIN node and alpha irradiation sources, the upper PIN node and the lower PIN node are in parallel connection, the lower PIN node sequentially comprises an N-type ohmic contact electrode, an N-type highly-doped 4H-SiC substrate, an N-type lowly-doped SiC epitaxial layer, a P-type highly-doped GaN epitaxial layer and a P-type ohmic contact electrode from bottom to top, and the bottom-to-top structural distribution of the upper PIN node is the same as that of the lower PIN node. A plurality of grooves are formed in each PIN node, the alpha irradiation sources are arranged in the grooves respectively, the two PIN nodes are in contact through the P-type ohmic contact electrode, and the upper grooves and the lower grooves are in mirror symmetry and are communicated. The epitaxy GaN parallel type PIN type alpha irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the utilization and the energy collecting rate of the nuclear raw materials are high, and the output voltage of the battery is high, and a microcircuit can be constantly powered up.

Description

Parallel PIN type alpha irradiation battery of extension GaN and preparation method thereof
Technical field
The invention belongs to microelectronic, relate to semiconductor device structure and preparation method, specifically parallel PIN type alpha irradiation battery of a kind of silicon carbide-based extension GaN and preparation method thereof, can be used for the small circuit such as minute mechanical and electrical system and Aero-Space, deep-sea, polar region etc. needs long-term power supply and unattended occasion.
Technical background
Along with people are for the demand of low-power consumption, long-life, high reliability and small size power-supply unit, and concern to nuclear waste disposal, minisize nuclear battery becomes and receives much concern.Minisize nuclear battery is because its outstanding feature can be used to solve the long-term powerup issue of robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.And be expected to replace solar cell and thermoelectric (al) type radioisotope battery, solve at space flight and aviation field micro-/receive the long-term powerup issue of satellite, deep space unmanned probing device and ion propeller etc.
Nineteen fifty-three found by Rappaport research, and beta (β-Particle) radial energy that utilizes isotope to decay to produce produces electron-hole pair in semiconductor, and this phenomenon is called as β-VoltaicEffect.Nineteen fifty-seven, first Elgin-Kidde is used in β-VoltaicEffect power supply supply side, successfully produces first radioisotope micro battery β-VoltaicBattery.From 2006, along with the progress of semiconductor material with wide forbidden band SiC preparation and technology, there is the relevant report of the radioisotope micro battery based on SiC.
As a kind of important third generation semiconductor, people are more and more to the concern of GaN in recent years.Because its energy gap is large, thermal conductivity is high, and device working temperature and the voltage breakdown of making are high.In addition, GaN material is considered to a kind of desirable anti-irradiation semiconductor material always, and along with the development of nuclear technology and space technology, GaN material and device thereof are used to work under the very strong exceedingly odious condition of radiation.
The Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose is disclosed by Zhang Lin in Chinese patent CN101325093A.Because schottky contact layer in this schottky junction nuclear battery covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only has part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery.Therefore, the nuclear battery projectile energy loss of this structure is large, and energy conversion efficiency is lower.
Document " Demonstrationofa4HSiCbetavoltaiccell " has been introduced the C.I.Tomas by USA New York Cornell university, M.V.S.Chandrashekhar, and the people such as HuiLi have proposed silit PN junction formula nuclear battery.The substrate that this structure adopts is the highly doped substrate of P type, and immature in the existing technique of its Grown epitaxial loayer, therefore, easily introduces surface imperfection, and device creepage is large, and energy conversion rate is lower.
Document " Demonstrationofatadiationresistant; hightefficiencySiCbetavoltaic " has been introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy and S.Rodgers, the people such as T.George have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 1.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, P type Ohm contact electrode 6, the highly doped SiC layer 4 of P type, P type SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate 1 of N-shaped and N-type Ohm contact electrode 5.In this structure, only have the raw charge carrier of irradiation in depletion layer and in a near minority diffusion length to be collected.And, for avoiding Ohm contact electrode to stop incident ion, P type Ohmic electrode is made in to a corner of device, make from P type Ohmic electrode the raw charge carrier of the irradiation away from transport process by compound, reduce energy transformation ratio, reduced the output current of battery.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, parallel PIN type alpha irradiation battery of a kind of extension GaN and preparation method thereof is proposed, the barrier effect of high-energyα-particle αsource being given off with elimination metal electrode, increase αsource and semi-conductive contact area simultaneously, improve the utilization factor of αsource, thereby improve output current and the output voltage of battery.
Technical scheme of the present invention is achieved in that
One. the parallel PIN type alpha irradiation battery of extension GaN of the present invention, comprising: PIN unit and αsource, is characterized in that:
Described PIN unit, adopts upper and lower two PIN knot formation in parallel; Lower PIN knot is followed successively by from bottom to top, and N-type Ohm contact electrode 5, the highly doped 4H-SiC substrate 1 of N-type, doping content are 1x10 15～2x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be 1x10 19～5x10 19cm -3the highly doped GaN epitaxial loayer 3 of P type and P type Ohm contact electrode 4, upper PIN knot is followed successively by from bottom to top, P type Ohm contact electrode 4, doping content are 1x10 19～5x10 19cm -3the highly doped GaN epitaxial loayer 3 of P type, doping content be 1x10 15～2x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, the highly doped 4H-SiC substrate 1 of N-type and N-type Ohm contact electrode 5;
The one side that described two PIN tie its P type Ohm contact electrode 4 contacts, and in upper and lower PIN knot, groove forms Mirror Symmetry, the integrative-structure mutually connecting;
In each PIN knot, be provided with at least two grooves 6, the interior αsource 7 that is all placed with of each groove 6, to realize making full use of high-energyα-particle.
As preferably, described αsource 7 adopts the plutonium element that americium element that relative atomic masses are 241 or relative atomic mass are 238, i.e. Am 241or Pu 238.
As preferably, the degree of depth h of described groove 6 meets m+q<h<m+n+q, and wherein m is the thickness of the highly doped epitaxial loayer 3 of P type, and n is the thickness of the low-doped epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4.
As preferably, the width L of described groove 6 meets L≤2g, and wherein, g is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in αsource, is Am for αsource 241, its value is: g=7.5 μ m is Pu for αsource 238, its value is: g=10 μ m.
As preferably, the spacing d of described adjacent two grooves 6 meets d>=i, and wherein, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in 4H-SiC, is Am for αsource 241, its value is: i=10 μ m is Pu for αsource 238, its value is: i=18.2 μ m.
As preferably, it is lx10 that described substrate 1 adopts doping content 18cm -3n-type 4H-SiC.
Two. preparation method of the present invention comprises the following steps:
(1) make lower PIN knot:
1.1) clean: SiC print is cleaned, to remove surface contaminant;
1.2) the low-doped SiC epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10 15～2x10 15cm -3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5～10 μ m;
1.3) the highly doped GaN epitaxial loayer of growing P-type: the sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 DEG C and keep 10min with clean surface; Be respectively 52.3 μ molmin to passing into flow in reaction chamber again -1, 0.035molmin -1trimethyl aluminium and NH3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber -1, 8.93mmolmin -1, 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 1x10 19～5x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 1～2 μ m;
1.4) deposit Ohm contact electrode: utilize in the highly doped GaN epi-layer surface of P type metal Ti/Au that electron-beam vapor deposition method deposit a layer thickness is 100nm/400nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode;
1.5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ti/Au of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ti/Au metal level to corrosion window place corrodes, and exposes the highly doped GaN epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window; Short annealing 3 minutes in nitrogen atmosphere at 1100 DEG C;
1.6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped GaN epitaxial loayer of the P type exposing is 6.5～12 μ m, and width is 5～14 μ m, and spacing is at least two grooves of 12～25 μ m;
1.7) place αsource: the method that adopts deposit or smear, in groove, place αsource, obtain being with fluted lower PIN knot.
(2) repeating step 1.1) to step 1.7) PIN ties in makings.
(3) utilize bonding method that upper PIN knot and the P type Metal Contact electrode of lower PIN knot are pressed together, complete the making of the parallel PIN type alpha irradiation battery of extension GaN.
The present invention compared with prior art tool has the following advantages:
1. αsource is placed in groove by the present invention, and the high-energyα-particle that αsource is produced is directly injected the space charge region of PIN knot, has reduced the energy loss of high-energyα-particle, thereby has improved the output current of collection of energy rate and battery;
2. the present invention is because groove width is not more than the twice of high-energyα-particle average incident degree of depth in αsource material that αsource discharges, significantly reduce the energy attenuation of high-energyα-particle in αsource inside, improved the output current of collection of energy rate and battery;
3. the present invention is because the energy gap of the backing material 4H-SiC adopting is larger than the energy gap of traditional Si, and radiation-resisting performance is better, can reduce the damage of high-energyα-particle to device, improves the operating voltage of battery, extends the serviceable life of battery simultaneously;
4. the present invention is owing to adopting the energy gap of the highly doped epitaxial loayer GaN of P type larger than the energy gap of SiC, and radiation-resisting performance is better, has improved the operating voltage of battery.
5. the present invention, due to by two in parallel placements of PIN knot, has further improved the output voltage of battery.
Brief description of the drawings
Fig. 1 is the schematic cross-section of existing PIN nuclear battery;
Fig. 2 is the schematic cross-section of the parallel PIN type alpha irradiation battery of extension GaN of the present invention;
Fig. 3 is the schematic flow sheet that the present invention makes the parallel PIN type alpha irradiation battery of extension GaN.
Embodiment
With reference to Fig. 2, irradiation battery of the present invention, comprising: PIN unit and αsource, and PIN unit is made up of the parallel connection of upper and lower two PIN knot; Lower PIN knot is followed successively by from bottom to top, and N-type Ohm contact electrode 5, doping content are lx10 18cm -3the highly doped 4H-SiC substrate 1 of N-type, doping content be 1x10 15～2x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be 1x10 19～5x10 19cm -3the highly doped epitaxial loayer 3 of P type GaN and P type Ohm contact electrode 4; Upper PIN knot is followed successively by from bottom to top, and P type Ohm contact electrode 4, doping content are 1x10 19～5x10 19cm -3the highly doped GaN epitaxial loayer 3 of P type, doping content be 1x10 15～2x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be lx10 18cm -3the highly doped 4H-SiC substrate 1 of N-type and N-type Ohm contact electrode 5, these two PIN tie its P type Ohm contact electrode 4 and contact by bonding method; In each PIN knot, be provided with at least two grooves 6, its degree of depth h meets m+q<h<m+n+q, wherein m is the thickness of the highly doped epitaxial loayer 3 of P type, and n is the thickness of the low-doped epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4.Its width L meets L≤2g, and g is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in αsource, is Am for αsource 241, its value is: g=7.5 μ m is Pu for αsource 238, its value is: g=10 μ m, and the spacing d of adjacent two grooves 6 meets d>=i, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in 4H-SiC, is Am for αsource 241, its value is: i=10 μ m is Pu for αsource 238, its value is: i=18.2 μ m; Groove in upper and lower PIN knot forms Mirror Symmetry, the integrative-structure mutually connecting; αsource 7 is placed in groove 6.
Battery in working order under, the most of high-energyα-particle radiating from αsource is directly injected into the space charge region of the highly doped GaN epitaxial loayer 3 of P type and low-doped SiC epitaxial loayer 2 near interfaces of N-type, and then excites charge carrier, form output current.
With reference to Fig. 3, the method that the present invention makes the parallel PIN type alpha irradiation battery of extension GaN provides following three embodiment:
Embodiment 1, preparing αsource is Am 241, there is the parallel PIN type alpha irradiation battery of the extension GaN of two grooves.
Step 1: make lower PIN knot.
(1a) clean 4H-SiC print, to remove surface contaminant, as shown in Fig. 3 (a).
(1a.1) be lx10 by doping content 18cm -3highly doped N-shaped 4H-SiC substrate print at NH 4oH+H 2o 2reagent soaks sample 10min, takes out post-drying, to remove sample surfaces organic remains;
(1a.2) the 4H-SiC print of removing after surperficial organic remains is re-used to HCl+H 2o 2reagent soaks sample 10min, takes out post-drying, to remove ionic contamination.
(1b) the low-doped SiC epitaxial loayer of epitaxial growth N-type, as shown in Fig. 3 (b).
On SiC print after cleaning, utilize the low-doped SiC epitaxial loayer of N-type of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x10 15cm -3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5 μ m.
(1c) the highly doped GaN epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
(1c.1) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 DEG C, keep 10min;
(1c.2) pressure of reaction chamber is made as to 2x10 4pa, uses N 2and H 2mixed gas as carrier gas, be respectively 52.3 μ molmin to passing into flow in reaction chamber -1and 0.035molmin -1trimethyl aluminium and NH3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer;
(1c.3) reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber -1, 8.93mmolmin -1with 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 1x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 1 μ m.
(1d) deposit Ohm contact electrode, as shown in Fig. 3 (d).
(1d.1) the SiC print completing after the highly doped GaN outer layer growth of P type is carried out to RCA standard cleaning;
(1d.2) print after cleaning is put on the microslide of electron beam evaporation deposition machine, adjusting microslide is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 × 10 -4pa, adjusting line is 40mA, the Ti/Au metal level that is 100nm/400nm in surface deposition a layer thickness of the highly doped GaN epitaxial loayer of the P of SiC print type;
(1d.3) utilize electron-beam vapor deposition method, at the substrate Si C Ni metal level that back side deposition thickness of extension is not 300nm;
(1d.4) at 1100 DEG C, short annealing 3 minutes in nitrogen atmosphere.
(1e) on the Ti/Au metal level of SiC extension one outgrowth, carve structure graph window, as shown in Fig. 3 (e).
(1e.1) spin coating one deck photoresist on the Ti/Au layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of two grooves of battery, photoresist is exposed with electron beam, forms corrosion window;
(1e.2) utilize reactive ion technique etching Ti/Au metal level, reacting gas adopts oxygen, on the highly doped GaN epitaxial loayer of P type exposing, obtains the etching window of P type Ohm contact electrode and groove at etching groove window.
(1f) etching groove, as shown in Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 6.5 μ m, and width is 5 μ m, and spacing is two grooves of 12 μ m.
(1g) place αsource, as shown in Fig. 3 (g).
The method that adopts deposit or smear is placed αsource Am in each groove 241, obtain being with fluted lower PIN knot.
Step 2: PIN knot in making.
Repeating step (1a), to step (1g), obtains PIN knot.
Step 3: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain the parallel PIN type alpha irradiation battery of extension GaN, as shown in Fig. 3 (h).
Embodiment 2, preparing αsource is Am 241, there is the parallel PIN type alpha irradiation battery of the extension GaN of seven grooves.
Step 1: make lower PIN knot.
1a) clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step (1a) of embodiment 1.
The low-doped SiC epitaxial loayer of 1b) epitaxial growth N-type, as Fig. 3 (b).
On SiC print after cleaning, utilize the low-doped SiC epitaxial loayer of N-type of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and completing nitrogen doped concentration is 1.5x10 15cm -3, thickness is the growth of the low-doped SiC epitaxial loayer of the N-type of 8 μ m.
1c) the highly doped GaN epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
1c.1) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 DEG C, keep 10min;
1c.2) pressure of reaction chamber is made as to 2x10 4pa, uses N 2and H 2mixed gas as carrier gas, be respectively 52.3 μ molmin to passing into flow in reaction chamber -1and 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer;
1c.3) reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber -1, 8.93mmolmin -1with 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 3x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 1.5 μ m.
1d) deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step (1d) of embodiment mono-.
1e) on the Ti/Au metal level of SiC extension one outgrowth, carve structure graph window, as Fig. 3 (e).
1e.1) spin coating one deck photoresist on the Ti/Au layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of seven grooves of battery, photoresist is exposed with electron beam, forms corrosion window;
1e.2) utilize reactive ion technique etching Ti/Au metal level, reacting gas adopts oxygen, exposes the highly doped SiC epitaxial loayer of P type of extension, obtains the etching window of P type Ohm contact electrode and groove.
1f) etching groove, as Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 10 μ m, and width is 10 μ m, and spacing is seven grooves of 20 μ m.
1g) place αsource, as Fig. 3 (g).
This step is identical with the step (1g) of embodiment mono-.
Step 2: PIN knot in making.
Repeating step 1a) to step 1g), obtain PIN knot.
Step 3: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain the parallel PIN type alpha irradiation battery of extension GaN, as Fig. 3 (h).
Embodiment 3, preparing αsource is Pu 238, there is the parallel PIN type alpha irradiation battery of the extension GaN of 15 grooves.
Steps A: PIN knot in making.
(A1) clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step (1a) of embodiment 1.
(A2) the low-doped SiC epitaxial loayer of N-type that utilizes chemical vapor deposition CVD method epitaxial growth nitrogen to adulterate on the SiC print after cleaning.Its process conditions are: epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen.Obtaining nitrogen doped concentration is 2x10 15cm -3, thickness is that the low-doped SiC epitaxial loayer of the N-type of 10 μ m is as Fig. 3 (b).
(A3) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 DEG C, keep 10min; Again the pressure of reaction chamber is made as to 2x10 4pa, uses N 2and H 2mixed gas as carrier gas, be respectively 52.3 μ molmin to passing into flow in reaction chamber -1and 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber -1, 8.93mmolmin -1with 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, obtaining magnesium doping content is 5x10 19cm -3, thickness is that the highly doped GaN epitaxial loayer of the P type of 2 μ m is as Fig. 3 (c).
(A4) deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step (1d) of embodiment mono-.
(A5) spin coating one deck photoresist on the Ti/Au layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of 15 grooves of battery, photoresist is exposed with electron beam, forms corrosion window; Then utilize reactive ion technique etching Ti/Au metal level, reacting gas adopts oxygen, exposes the highly doped GaN epitaxial loayer of the P type SiC of extension, obtains the etching window of P type Ohm contact electrode and groove as Fig. 3 (e).
(A6) utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 12 μ m, and width is 14 μ m, and spacing is 15 grooves of 25 μ m, as Fig. 3 (f).
(A7) method that adopts deposit or smear is placed αsource Pu in each groove 238, obtain being with fluted PIN to tie as Fig. 3 (g).
Step B: PIN knot in making.
Repeating step (A1), to step (A7), obtains PIN knot.
Step C: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain the parallel PIN type alpha irradiation battery of extension GaN as Fig. 3 (h).

Claims (7)

1. a parallel PIN type alpha irradiation battery of extension GaN, comprising: PIN unit and αsource, is characterized in that:
Described PIN unit, adopts upper and lower two PIN knot formation in parallel; Lower PIN knot is followed successively by from bottom to top, and N-type Ohm contact electrode (5), the highly doped 4H-SiC substrate of N-type (1), doping content are 1x10 15～2x10 15cm -3the low-doped SiC epitaxial loayer of N-type (2), doping content be 1x10 19～5x10 19cm -3the highly doped GaN epitaxial loayer of P type (3) and P type Ohm contact electrode (4); Upper PIN knot is followed successively by from bottom to top, and P type Ohm contact electrode (4), doping content are 1x10 19～5x10 19cm -3the highly doped GaN epitaxial loayer of P type (3), doping content be 1x10 15～2x10 15cm -3the low-doped SiC epitaxial loayer of N-type (2), the highly doped 4H-SiC substrate of N-type (1) and N-type Ohm contact electrode (5);
The one side that described two PIN tie its P type Ohm contact electrode (4) contacts, and in upper and lower PIN knot, groove forms Mirror Symmetry, the integrative-structure mutually connecting;
In each PIN knot, be provided with at least two grooves (6), in each groove (6), be all placed with αsource (7), to realize making full use of high-energyα-particle.
2. battery according to claim 1, is characterized in that αsource (7) to adopt relative atomic mass is 241 the plutonium element that americium element or relative atomic mass are 238, i.e. Am 241or Pu 238.
3. battery according to claim 1, the degree of depth h that it is characterized in that groove (6) meets m+q<h<m+n+q, wherein m is the thickness of the highly doped epitaxial loayer of P type (3), n is the thickness of the low-doped epitaxial loayer of N-type (2), and q is the thickness of P type Ohm contact electrode (4).
4. battery according to claim 1 and 2, is characterized in that the width L of groove (6) meets L≤2g, and wherein, g is the average incident degree of depth of high-energyα-particle in αsource that αsource (7) discharges, and is Am for αsource 241, its value is: g=7.5 μ m is Pu for αsource 238, its value is: g=10 μ m.
5. battery according to claim 1, the spacing d that it is characterized in that adjacent two grooves (6) meets d>=i, wherein, i is the average incident degree of depth of high-energyα-particle in 4H-SiC that αsource (7) discharges, and is Am for αsource 241, its value is: i=10 μ m is Pu for αsource 238, its value is: i=18.2 μ m.
6. battery according to claim 1, is characterized in that it is lx10 that substrate (1) adopts doping content 18cm -3n-type 4H-SiC.
7. a preparation method for the parallel PIN type alpha irradiation battery of extension GaN, comprises the following steps:
(1) make lower PIN knot:
1.1) clean: SiC print is cleaned, to remove surface contaminant;
1.2) the low-doped SiC epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10 15～2x10 15cm -3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5～10 μ m;
1.3) the highly doped GaN epitaxial loayer of growing P-type: the sample after growth N-type low-doped SiC epitaxial loayer is put into chemical vapor deposition CVD stove, be heated to 1100 DEG C and keep 10min with clean surface under H2 atmosphere; Be respectively 52.3 μ molmin to passing into flow in reaction chamber again -1, 0.035molmin -1trimethyl aluminium and NH3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber -1, 8.93mmolmin -1, 0.18 μ molmin -1trimethyl gallium, NH3 and CP 2mg, completing magnesium doping content is 1x10 19～5x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 1～2 μ m;
1.4) deposit Ohm contact electrode: utilize in the highly doped GaN epi-layer surface of P type metal Ti/Au that electron-beam vapor deposition method deposit a layer thickness is 100nm/400nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 DEG C;
1.5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ti/Au of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ti/Au metal level to corrosion window place corrodes, and exposes the highly doped GaN epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
1.6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped GaN epitaxial loayer of the P type exposing is 6.5～12 μ m, and width is 5～14 μ m, and spacing is at least two grooves of 12～25 μ m;
1.7) place αsource: the method that adopts deposit or smear, in groove, place αsource, obtain being with fluted lower PIN knot.
(2) repeating step 1.1) to step 1.7) PIN ties in makings.
(3) utilize bonding method that the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, complete the making of the parallel PIN type alpha irradiation battery of extension GaN.
CN201410300663.5A 2014-06-29 2014-06-29 Epitaxy GaN parallel type PIN type alpha irradiation battery and manufacturing method thereof Pending CN104051048A (en)

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Citations (3)

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US20040150229A1 (en) * 2003-01-31 2004-08-05 Larry Gadeken Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040150229A1 (en) * 2003-01-31 2004-08-05 Larry Gadeken Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material
US20070080605A1 (en) * 2005-08-25 2007-04-12 Chandrashekhar Mvs Betavoltaic cell
CN101527175A (en) * 2009-04-10 2009-09-09 苏州纳米技术与纳米仿生研究所 PIN type nuclear battery and preparation method thereof

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Application publication date: 20140917