CN102509569B - Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell - Google Patents

Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell Download PDF

Info

Publication number
CN102509569B
CN102509569B CN201110318293.4A CN201110318293A CN102509569B CN 102509569 B CN102509569 B CN 102509569B CN 201110318293 A CN201110318293 A CN 201110318293A CN 102509569 B CN102509569 B CN 102509569B
Authority
CN
China
Prior art keywords
layer
silicon carbide
vanadium
junction type
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110318293.4A
Other languages
Chinese (zh)
Other versions
CN102509569A (en
Inventor
郭辉
张克基
张玉明
张玉娟
韩超
石彦强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shaanxi Semiconductor Pioneer Technology Center Co ltd
Shaanxi Xi'an Electronic Large Assets Management Co ltd
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN201110318293.4A priority Critical patent/CN102509569B/en
Publication of CN102509569A publication Critical patent/CN102509569A/en
Application granted granted Critical
Publication of CN102509569B publication Critical patent/CN102509569B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

The invention discloses a silicon carbide Schottky junction type nuclear cell with a vanadium-doped I layer and a production method of the silicon carbide Schottky junction type nuclear cell, mainly solving the problem of lowered energy conversion efficiency in the prior art. The Schottky junction type nuclear cell provided by the invention comprises an n-type ohmic contact electrode (8), an n-type SiC substrate sample (7) with a doping concentration of 1*10<18>-7*10<18>cm<-3>, an n-type SiC epitaxial layer (6), an SiO2 passivation layer (5), a Schottky metal contact layer (4), a Schottky contact electrode (3), a bonding layer (2) and a radioisotope source layer (1) from bottom to top, wherein the n-type SiC epitaxial layer (6) which has the doping concentration of 1*10<13>-5*10<14>cm<-3> is formed through injecting vanadium ions of which the energy is 2000 KeV-2500 KeV and the dosage is 5*10<13>-1*10<15>cm<-2>. The silicon carbide Schottky junction type nuclear cell with the vanadium-doped I layer has the advantages of high electron-hole pair collection ratio, high open circuit voltage and high energy conversion efficiency, and can be served as an on-chip power supply of a microsystem, a power supply of a cardiac pacemaker and an emergency power supply of a mobile phone.

Description

Silicon carbide Schottky junction type nuclear battery of I layer vanadium doping and preparation method thereof
Technical field
The invention belongs to microelectronic, relate in particular to a kind of silicon carbide Schottky junction type nuclear battery of I layer vanadium doping, can be used for the nuclear energy of isotope radiation to be directly converted to electric energy.
Technical background
Nineteen fifty-three, Beta (β-Particle) particle that utilizes isotope decay to produce can produce electron hole pair in semiconductor by Rappaport research discovery, and this phenomenon is called as β-Voltaic Effect.Soon afterwards, first Elgin-Kidde is used in power supply supply side by β-Voltaic Effect in nineteen fifty-seven, and successfully experiment produces first radioisotope micro battery β-Voltaic Battery.Since 1989, GaN, GaP, AlGaAs, the materials such as polysilicon are utilized the material as β-Voltaic battery in succession.Along with the preparation of semiconductor material with wide forbidden band SiC and the progress of technology, 2006 start, and have in succession occurred the relevant report of the radioisotope micro battery based on SiC on both at home and abroad.
Document " APPLIED PHYSICS LETTERS 88, 033506 (2006) < < Demonstration of a 4H SiC betavoltaic cell > > " introduced the M.V.S.Chandrashekhar by USA New York Cornell university, C.I.Tomas, Hui Li, the people such as M.G.Spencer and Amit Lal have proposed silit pn eliminant nuclear battery, as shown in Figure 1, this pn eliminant nuclear battery comprises radioactive isotope power supply 3 from top to bottom successively, Ohm contact electrode 14, the highly doped SiC layer 6 of N-shaped, the low-doped SiC layer 8 of p-type, the highly doped SiC layer 9 of p-type and p-type ohmic contact layer 12.
Document " APPLIED PHYSICS LETTERS 88, 064101 (2006) < < Demonstration of a tadiation resistant, hight efficiency SiC betavoltaic > > " introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy, and S.Rodgers, the people such as the J.David Roberston and John Brockman of T.George and U.S. Colombia University of Missouri have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 2, this p-i-n eliminant nuclear battery comprises radioactive isotope power supply 3 from top to bottom successively, p-type ohmic contact layer 12, highly doped p-type SiC layer 9, p-type SiC layer 11, intrinsic i layer 10, highly doped N-shaped SiC substrate 6, Ohm contact electrode 7.In this structure, highly doped p-type SiC layer forms by isoepitaxial growth, and its doping content is often not high, and Built-in potential is corresponding lower, and brings difficulty can to the preparation of p-type Ohmic contact.
In Chinese patent CN 101325093A, disclose by Zhang Lin, the Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose, avoided the preparation of above-mentioned p-type Ohmic contact, as shown in Figure 3, this Schottky junction type nuclear cell comprises bonded layer 1, schottky metal layer 13, SiO from top to bottom successively 2 passivation layer 4, low-doped N-shaped SiC epitaxial loayer 5, highly doped N-shaped SiC substrate 6, Ohm contact electrode 7.But in this structure, low-doped N-shaped epitaxial loayer forms by involuntary doped epitaxial growth, and doping content is higher, and the width of depletion region obtaining is less than normal, and the charge carrier of generation can not all be collected, and device open-circuit voltage diminishes, and energy conversion efficiency reduces.
Summary of the invention
The object of the invention is to avoid the deficiency of above-mentioned prior art, silicon carbide Schottky junction type nuclear battery of a kind of I layer vanadium doping and preparation method thereof is proposed, to reduce the carrier concentration of I layer, increase width of depletion region, improve the collection rate of the electron hole pair producing, and then improve open-circuit voltage and the energy conversion efficiency of device.
For achieving the above object, the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping provided by the invention, comprises N-shaped Ohm contact electrode 8, N-shaped SiC substrate print 7, N-shaped SiC epitaxial loayer 6, SiO from bottom to top successively 2 passivation layer 5, schottky metal contact layer 4, Schottky contact electrode 3, bonded layer 2 and radioactive isotope power supply layer 1, is characterized in that: the doping content of N-shaped SiC substrate print 7 is 1 * 10 18～7 * 10 18cm -3, N-shaped SiC epitaxial loayer 6 is to be 2000KeV～2500KeV by Implantation Energy, dosage is 5 * 10 13～1 * 10 15cm -2vanadium ion to form doping content be 1 * 10 13～5 * 10 14cm -3.
For achieving the above object, the method for making of the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping provided by the invention, comprises the steps:
(1) in doping content, be 1 * 10 18～7 * 10 18cm -3highly doped N-shaped SiC substrate print on, epitaxial growth thickness is 3um～5um, nitrating concentration is 1 * 10 15～5 * 10 15cm -3initial N-shaped SiC epitaxial loayer;
(2) on initial N-shaped SiC epitaxial loayer, carrying out Implantation Energy is 2000KeV～2500KeV again, and implantation dosage is 5 * 10 13～1 * 10 15cm -2vanadium ion inject, thermal annealing 20～40 minutes under the high temperature of 1450 ℃～1650 ℃ then, and then to obtain doping content be 1 * 10 13～5 * 10 14cm -3n-shaped SiC epitaxial loayer;
(3) to doping content, be 1 * 10 13～5 * 10 14cm -3n-shaped SiC epitaxial loayer carry out dry-oxygen oxidation, form SiO 2passivation layer;
(4) use reactive ion etching method at the back-etching SiC of N-shaped SiC substrate layer, electron beam evaporation Ni/Cr/Au metal level, at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, annealing forms Ohm contact electrode;
(5) at SiO 2the centre of passivation layer utilizes wet etching to go out Schottky contacts window, and on this window and the SiO of window periphery 2on passivation layer, the translucent high barrier schottky metal Ni of deposit or Pt or Au, peel off and form respectively schottky metal contact layer and Schottky contact electrode;
(6) on Schottky contact electrode, deposited by electron beam evaporation Cr/Au forms bonded layer;
(7) on schottky metal contact layer, plate radioactive isotope power supply Ni-63 layer, complete the making of the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping.
The present invention compared with prior art tool has the following advantages:
(1) the present invention is owing to adopting silicon carbide-based schottky junction structure, rather than p-n junction or p-i-n structure, and technique is simply easy to realize.
(2) the present invention is owing to adopting translucent high barrier schottky metal contact layer, not only improved nuclear battery open-circuit voltage but also effectively reduced metal level to the stopping of low energy incident particle, the energy conversion efficiency of nuclear battery is obviously improved.
(3) the silicon carbide Schottky junction type nuclear battery that the present invention makes, because I layer is to adopt nitrating epitaxial growth, then epitaxial loayer being carried out to vanadium ion injection again compensates the free carrier on epitaxial loayer energy level, therefore the charge carrier doping content of I layer is extremely low, increase width of depletion region, improve the collection rate of the electron hole pair producing, and then improve open-circuit voltage and the energy conversion efficiency of device;
Accompanying drawing explanation
Fig. 1 is existing pn structure nuclear battery schematic cross-section;
Fig. 2 is existing p-i-n structure nuclear battery schematic cross-section;
Fig. 3 is existing schottky junction structure nuclear battery schematic cross-section
Fig. 4 is nuclear battery cross-sectional view of the present invention;
Fig. 5 is the technical process schematic diagram of nuclear battery method for making of the present invention.
Embodiment
With reference to Fig. 4, nuclear battery of the present invention comprises N-shaped Ohm contact electrode 8, N-shaped SiC substrate print 7, N-shaped SiC epitaxial loayer 6, SiO 2passivation layer 5, schottky metal contact layer 4, Schottky contact electrode 3, bonded layer 2 and radioactive isotope power supply layer 1, wherein the doping content of N-shaped SiC substrate print 7 is 1 * 10 18～7 * 10 18cm -3, its back side is that by thickness, to be divided the N-shaped Ohm contact electrode 8 of the Ni/Cr/Au alloy composition of 200nm/50nm/100nm, front be that thickness is 3um～5um, doping content is 1 * 10 13～5 * 10 14cm -3n-shaped SiC epitaxial loayer 6, this N-shaped SiC epitaxial loayer 6 injects formation by vanadium ion, N-shaped SiC epitaxial loayer 6 left and right tops are SiO 2passivation layer 5, is Schottky contacts metal level 4 and Schottky contact electrode 3 directly over N-shaped SiC epitaxial loayer 6, and the top, left and right of Schottky contact electrode 3 is bonded layer 2, is isotope source layer 1 directly over Schottky contacts metal level 4.
With reference to Fig. 5, the method for making of nuclear battery of the present invention provides following three kinds of embodiment.
Embodiment 1
The 1st step, extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print, as Fig. 5 a.
Selecting doping content is 1 * 10 18cm -3highly doped N-shaped SiC substrate print 7, after cleaning, on highly doped N-shaped SiC substrate print, epitaxial growth thickness is 4um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 1 * 10 15cm -3, epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and its flow is respectively 50sccm and 150sccm, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
The 2nd step: be 1 * 10 to nitrating concentration 15cm -3initial N-shaped SiC epitaxial loayer carries out vanadium ion injection, as Fig. 5 b.
(2.1) to nitrating concentration, be 1 * 10 15cm -3initial N-shaped SiC epitaxial loayer carry out vanadium ion injection, its vanadium ion injection condition is: the energy of Implantation is 2200KeV, implantation dosage is 5 * 10 13cm -2, to guarantee that the maximum concentration of vanadium ion is greater than the doping content of the epitaxial loayer after nitrating;
(2.2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 1 * 10 13cm -3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1450 ℃, annealing time is 40 minutes.
The 3rd step: be 1 * 10 in doping content 13cm -3on N-shaped SiC epitaxial loayer, form SiO 2passivation layer, as Fig. 5 c.
At 1100 ± 50 ℃ of temperature, N-shaped SiC epitaxial loayer 6 is carried out to the dry-oxygen oxidation of two hours, form SiO 2passivation layer 5.
The 4th step: form Ohmic contact at substrate back, as Fig. 5 d.
(4.1) the SiC layer that is 0.5um by reactive ion etching method at the back-etching thickness of N-shaped SiC substrate 7;
(4.2) 7 back side deposited by electron beam evaporation thickness of the N-shaped SiC substrate after etching are respectively the Ni/Cr/Au of 200nm/50nm/200nm;
(4.3), at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, whole sample annealing is formed to Ohm contact electrode 8 for two minutes.
The 5th step: deposit schottky metal contact layer and Schottky contact electrode, as Fig. 5 e.
(5.1) the HF acid corrosion that employing concentration is 5% 10 seconds, at SiO 2the centre position of passivation layer 3 erodes away Schottky contacts window;
(5.2) at the SiO of the window eroding away and window periphery 2the Ni that on passivation layer, d.c. sputtering deposition thickness is 5nm;
(5.3) by ultrasound wave, peel off respectively and form schottky metal contact layer 4 at described window, at the SiO of described window periphery 2on passivation layer, form Schottky contact electrode 3;
The 6th step: make bonded layer on Schottky contact electrode, as Fig. 5 f.
On Schottky contact electrode 3, first deposited by electron beam evaporation thickness is respectively 10nm/200nm Cr/Au, then is peeled off and formed bonded layer 2 by ultrasound wave.
The 7th step: power on and plate radioactive isotope power supply Ni-63 layer 1 at schottky metal contact layer 4, as Fig. 5 g.
Embodiment 2
Step 1: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print, as Fig. 5 a.
Selecting doping content is 5 * 10 18cm -3highly doped N-shaped SiC substrate print 7, after cleaning, on highly doped N-shaped SiC substrate print, epitaxial growth thickness is 3um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 5 * 10 15cm -3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and its flow is respectively 50sccm and 150sccm, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step 2: be 5 * 10 to nitrating concentration 15cm -3initial N-shaped SiC epitaxial loayer carries out vanadium ion injection, as Fig. 5 b.
(2.1) to nitrating concentration, be 5 * 10 15cm -3initial N-shaped SiC epitaxial loayer carry out vanadium ion injection, its vanadium ion injection condition is: the energy of Implantation is 2000KeV, implantation dosage is 1 * 10 15cm -2, to guarantee that the maximum concentration of vanadium ion is greater than the doping content of the epitaxial loayer after nitrating;
(2.2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 5 * 10 14cm -3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1550 ℃, annealing time is 40 minutes.
Step 3: be 5 * 10 in assorted concentration 14cm -3on N-shaped SiC epitaxial loayer, form SiO 2passivation layer, as Fig. 5 c.
At 1100 ± 50 ℃ of temperature, N-shaped SiC epitaxial loayer 6 is carried out to the dry-oxygen oxidation of two hours, form SiO 2passivation layer 5.
The 4th step: form Ohmic contact at substrate back, as Fig. 5 d.
(4.1) the SiC layer that is 0.5um by reactive ion etching method at the back-etching thickness of N-shaped SiC substrate 7;
(4.2) 7 back side deposited by electron beam evaporation thickness of the N-shaped SiC substrate after etching are respectively the Ni/Cr/Au of 200nm/50nm/200nm;
(4.3), at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, whole sample annealing is formed to Ohm contact electrode 8 for two minutes.
The 5th step: deposit schottky metal contact layer and Schottky contact electrode, as Fig. 5 e.
(5.1) the HF acid corrosion that employing concentration is 5% 10 seconds, at SiO 2the centre position of passivation layer 3 erodes away Schottky contacts window;
(5.2) at the SiO of the window eroding away and window periphery 2the Pt that on passivation layer, d.c. sputtering deposition thickness is 10nm;
(5.3) by ultrasound wave, peel off respectively and form schottky metal contact layer 4 at described window, at the SiO of described window periphery 2on passivation layer, form Schottky contact electrode 3;
The 6th step: make bonded layer on Schottky contact electrode, as Fig. 5 f.
On Schottky contact electrode 3, first deposited by electron beam evaporation thickness is respectively 10nm/200nm Cr/Au, then is peeled off and formed bonded layer 2 by ultrasound wave.
The 7th step: radioactive isotope power supply Ni-63 layer 1 in electroless plating on schottky metal contact layer 4, as Fig. 5 g.
Embodiment 3
Steps A: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print, as Fig. 5 a.
Selecting doping content is 7 * 10 18cm -3highly doped N-shaped SiC substrate print 7, after cleaning, on highly doped N-shaped SiC substrate print, epitaxial growth thickness is 5um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 2 * 10 15cm -3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and its flow is respectively 50sccm and 150sccm, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step B: be 2 * 10 to nitrating concentration 15cm -3initial N-shaped SiC epitaxial loayer carries out vanadium ion injection, as Fig. 5 b.
(B1) to nitrating concentration, be 2 * 10 15cm -3initial N-shaped SiC epitaxial loayer carry out vanadium ion injection, its vanadium ion injection condition is: the energy of Implantation is 2500KeV, implantation dosage is 1 * 10 14cm -2, to guarantee that the maximum concentration of vanadium ion is greater than the doping content of the epitaxial loayer after nitrating;
(B2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 5 * 10 13cm -3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1650 ℃, annealing time is 20 minutes.
Step C: be 5 * 10 in assorted concentration 13cm -3on N-shaped SiC epitaxial loayer, form SiO 2passivation layer, as Fig. 5 c.
At 1100 ± 50 ℃ of temperature, N-shaped SiC epitaxial loayer 6 is carried out to the dry-oxygen oxidation of two hours, form SiO 2passivation layer 5.
D step: form Ohmic contact at substrate back, as Fig. 5 d.
(4.1) the SiC layer that is 0.5um by reactive ion etching method at the back-etching thickness of N-shaped SiC substrate 7;
(4.2) 6 back side deposited by electron beam evaporation thickness of the N-shaped SiC substrate after etching are respectively the Ni/Cr/Au of 200nm/50nm/200nm;
(4.3), at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, whole sample annealing is formed to Ohm contact electrode 8 for two minutes.
E step: deposit schottky metal contact layer and Schottky contact electrode, as Fig. 5 e.
(5.1) the HF acid corrosion that employing concentration is 5% 10 seconds, at SiO 2the centre position of passivation layer 3 erodes away Schottky contacts window;
(5.2) at the SiO of the window eroding away and window periphery 2the Au that on passivation layer, d.c. sputtering deposition thickness is 20nm;
(5.3) by ultrasound wave, peel off respectively and form schottky metal contact layer 4 at described window, at the SiO of described window periphery 2on passivation layer, form Schottky contact electrode 3;
F step: make bonded layer on Schottky contact electrode, as Fig. 5 f.
On Schottky contact electrode 3, first deposited by electron beam evaporation thickness is respectively 10nm/200nm Cr/Au, then is peeled off and formed bonded layer 2 by ultrasound wave.
G step: radioactive isotope power supply Ni-63 layer 1 in molecular plating on schottky metal contact layer 4, as Fig. 5 g.
Above-described embodiment does not form any limitation of the invention, and energy and dosage that particularly vanadium ion injects need carrier concentration according to actual needs to determine, any change under inventive concept and principle, all at the row of protection of the present invention.

Claims (8)

1. a silicon carbide Schottky junction type nuclear battery for I layer vanadium doping, comprises N-shaped Ohm contact electrode (8), N-shaped SiC substrate print (7), N-shaped SiC epitaxial loayer (6), SiO from bottom to top successively 2passivation layer (5), schottky metal contact layer (4), Schottky contact electrode (3), bonded layer (2) and radioactive isotope power supply layer (1), is characterized in that: the doping content of N-shaped SiC substrate print (7) is 1 * 10 18～7 * 10 18cm -3, the doping content of N-shaped SiC epitaxial loayer (6) is 1 * 10 13～5 * 10 14cm -3, and be 2000KeV～2500KeV by Implantation Energy, dosage is 5 * 10 13～1 * 10 15cm -2vanadium ion form.
2. the silicon carbide Schottky junction type nuclear battery that a kind of I layer vanadium according to claim 1 adulterates, the thickness that it is characterized in that described N-shaped SiC epitaxial loayer (6) is 3um～5um.
3. a method for making of preparing the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping claimed in claim 1, comprises the steps:
(1) in doping content, be 1 * 10 18～7 * 10 18cm -3highly doped N-shaped SiC substrate print on, epitaxial growth thickness is 3um～5um, nitrating concentration is 1 * 10 15～5 * 10 15cm -3initial N-shaped SiC epitaxial loayer;
(2) on initial N-shaped SiC epitaxial loayer, carrying out Implantation Energy is 2000KeV～2500KeV again, and implantation dosage is 5 * 10 13～1 * 10 15cm -2vanadium ion inject, thermal annealing 20～40 minutes under the high temperature of 1450 ℃～1650 ℃ then, and then to obtain doping content be 1 * 10 13～5 * 10 14cm -3n-shaped SiC epitaxial loayer;
(3) to doping content, be 1 * 10 13～5 * 10 14cm -3n-shaped SiC epitaxial loayer carry out dry-oxygen oxidation, form SiO 2passivation layer;
(4) use reactive ion etching method at the back-etching SiC of N-shaped SiC substrate layer, electron beam evaporation Ni/Cr/Au metal level, at 1100 ± 50 ℃ of temperature, in nitrogen atmosphere, annealing forms Ohm contact electrode;
(5) at SiO 2the centre of passivation layer utilizes wet etching to go out Schottky contacts window, and on this window and the SiO of window periphery 2on passivation layer, the translucent high barrier schottky metal Ni of deposit or Pt or Au, peel off and form respectively schottky metal contact layer and Schottky contact electrode;
(6) on Schottky contact electrode, deposited by electron beam evaporation Cr/Au forms bonded layer;
(7) on schottky metal contact layer, plate radioactive isotope power supply Ni-63 layer, complete the making of the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping.
4. the method for making of the silicon carbide Schottky junction type nuclear battery of a kind of I layer vanadium doping according to claim 3, the maximum concentration that it is characterized in that injecting vanadium ion is greater than the doping content of the epitaxial loayer after nitrating.
5. the method for making of the silicon carbide Schottky junction type nuclear battery that I layer vanadium according to claim 4 adulterates, the dry-oxygen oxidation in wherein said step (3), is to be 1100 ± 50 ℃ of temperature in process conditions, under the condition of two hours time, carries out.
6. the method for making of the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping according to claim 4, is characterized in that the electron beam evaporation Ni/Cr/Au metal level that step (4) is described, and its thickness is respectively 200nm/50nm/200nm.
7. the method for making of the silicon carbide Schottky junction type nuclear battery of I layer vanadium doping according to claim 4, is characterized in that the thickness of the translucent high barrier schottky metal contact layer that step (5) is described is less than or equal to 20nm.
8. the method for making of the silicon carbide Schottky junction type nuclear battery of I layer vanadium according to claim 4 doping, is characterized in that the isotope source described in step (7), is to be plated on schottky metal contact layer by plating or electroless plating or molecular plating.
CN201110318293.4A 2011-10-19 2011-10-19 Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell Active CN102509569B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110318293.4A CN102509569B (en) 2011-10-19 2011-10-19 Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110318293.4A CN102509569B (en) 2011-10-19 2011-10-19 Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell

Publications (2)

Publication Number Publication Date
CN102509569A CN102509569A (en) 2012-06-20
CN102509569B true CN102509569B (en) 2014-04-16

Family

ID=46221642

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110318293.4A Active CN102509569B (en) 2011-10-19 2011-10-19 Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell

Country Status (1)

Country Link
CN (1) CN102509569B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103033276B (en) * 2012-12-27 2014-07-02 长安大学 Silicon carbide (SIC) temperature sensor and manufacturing method thereof
CN103646678A (en) * 2013-10-26 2014-03-19 溧阳市浙大产学研服务中心有限公司 Silicon carbide schottky junction type nuclear battery comprising niobium doped n-type epitaxial layer
CN103730183A (en) * 2013-10-26 2014-04-16 溧阳市浙大产学研服务中心有限公司 Manufacturing method of silicon carbide schottky junction type nuclear battery including niobium-doped n-type epitaxial layer
CN103730181A (en) * 2013-10-26 2014-04-16 溧阳市浙大产学研服务中心有限公司 Method for manufacturing silicon carbide Schottky junction nuclear battery
CN103730184A (en) * 2013-10-26 2014-04-16 溧阳市浙大产学研服务中心有限公司 Silicon carbide Schottky junction nuclear battery
CN104051052A (en) * 2014-06-29 2014-09-17 西安电子科技大学 Trench isolation type alpha irradiation battery with PIN type GaN extension layer and manufacturing method
CN109509706B (en) * 2018-12-29 2023-05-02 重庆伟特森电子科技有限公司 Preparation method of silicon carbide diode and silicon carbide diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101325093A (en) * 2008-07-23 2008-12-17 西安电子科技大学 Minisize nuclear battery
CN101923906A (en) * 2010-07-06 2010-12-22 西安电子科技大学 Silicon carbide-based grid-shaped Schottky contact type nuclear battery

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101325093A (en) * 2008-07-23 2008-12-17 西安电子科技大学 Minisize nuclear battery
CN101923906A (en) * 2010-07-06 2010-12-22 西安电子科技大学 Silicon carbide-based grid-shaped Schottky contact type nuclear battery

Also Published As

Publication number Publication date
CN102509569A (en) 2012-06-20

Similar Documents

Publication Publication Date Title
CN102354540B (en) I-layer vanadium-doped PIN-type atomic battery and manufacturing method thereof
CN102509569B (en) Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell
CN101320601B (en) Silicon carbide Schottky junction type nuclear cell and preparation thereof
CN102254581B (en) SiC ring electrode PIN-type nuclear battery
CN101325093B (en) Minisize nuclear battery manufacture method
EP2385561A2 (en) Solar Cell
CN102280157B (en) Silicon carbide gridding electrode PIN type nuclear battery
CN101599308A (en) Has minisize nuclear battery of protection ring structure and preparation method thereof
CN101916608B (en) Carborundum fingered schottky contact nuclear battery
CN103730182A (en) Manufacturing method of PIN-type isotope nuclear battery including niobium-doped n-type SiC epitaxial layer
CN103730184A (en) Silicon carbide Schottky junction nuclear battery
CN103730181A (en) Method for manufacturing silicon carbide Schottky junction nuclear battery
CN101923905B (en) Silicon carbide annular Schottky contact nuclear battery
CN105448375B (en) Using the carborundum PIN-type isotope battery and its manufacture method of αsource
CN109243659B (en) Miniature nuclear battery based on silicon carbide material and preparation method thereof
CN101923906B (en) Silicon carbide-based grid-shaped Schottky contact type nuclear battery
CN104051046A (en) Sandwich serial-type PIN-structure beta irradiation battery and manufacturing method thereof
CN103594138A (en) Method for manufacturing PIN nuclear isotope battery
CN104051041B (en) Sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and manufacturing method thereof
CN104051042B (en) Parallel PIN-type β irradiation battery and preparation method thereof
CN110556192B (en) Pm-147 silicon carbide slow-change PN type isotope battery and manufacturing method thereof
CN104051043B (en) 3D type PIN structure alpha irradiation battery and manufacturing method thereof
CN103646678A (en) Silicon carbide schottky junction type nuclear battery comprising niobium doped n-type epitaxial layer
CN110459340B (en) H-3 silicon carbide PN type isotope battery and manufacturing method thereof
CN109192350A (en) A kind of Schottky minisize nuclear battery and preparation method thereof based on carbofrax material

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20180925

Address after: 710065 16, 5 20 zhang84 Road, hi tech Zone, Xi'an, Shaanxi.

Patentee after: Shaanxi Semiconductor Pioneer Technology Center Co.,Ltd.

Address before: No. 2 Taibai Road, Xi'an, Shaanxi Province, Shaanxi

Patentee before: Shaanxi Xi'an electronic large Assets Management Co.,Ltd.

Effective date of registration: 20180925

Address after: No. 2 Taibai Road, Xi'an, Shaanxi Province, Shaanxi

Patentee after: Shaanxi Xi'an electronic large Assets Management Co.,Ltd.

Address before: No. 2 Taibai Road, Xi'an, Shaanxi Province, Shaanxi

Patentee before: Xidian University

TR01 Transfer of patent right