CN104103333A - Epitaxial GaN parallel type PIN structure beta irradiation battery and preparation method thereof - Google Patents

Epitaxial GaN parallel type PIN structure beta irradiation battery and preparation method thereof Download PDF

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CN104103333A
CN104103333A CN201410330952.XA CN201410330952A CN104103333A CN 104103333 A CN104103333 A CN 104103333A CN 201410330952 A CN201410330952 A CN 201410330952A CN 104103333 A CN104103333 A CN 104103333A
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epitaxial loayer
ray
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contact electrode
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郭辉
翟华星
宋庆文
张艺蒙
张玉明
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Xidian University
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Xidian University
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Abstract

The invention discloses an epitaxial GaN parallel type PIN structure beta irradiation battery and a preparation method thereof to mainly solve the problems of low energy transformation ratio and low output power of the current nuclear battery. The epitaxial GaN parallel type PIN structure beta irradiation battery comprises an upper PIN junction and a lower PIN junction both in parallel, and a beta radioactive source, wherein the lower PIN junction comprises an N-type ohm contact electrode, an N-type highly-doped 4H-SiC substrate, an N-type lightly-doped SiC epitaxial layer, a P-type highly-doped GaN epitaxial layer and a P-type ohm contact electrode sequentially from downside to upside; the superincumbent structure distribution of the upper PIN junction is as same as that of the lower PIN junction; each PIN junction comprises multiple grooves; each groove is internally provided with an alpha radioactive source; the two PIN junctions are in contact through the P-type ohm contact electrodes; upper and lower grooves are in mirror symmetry and are communicated with each other. The epitaxial GaN parallel type PIN structure beta irradiation battery has the advantages of big contact area of the radioactive source and a semiconductor, high nuclear material utilization rate and high energy collection rate, and high battery output voltage, and can continuously supply micro-circuits and the like with electric power.

Description

Parallel PIN structure β irradiation battery of extension GaN and preparation method thereof
Technical field
The invention belongs to microelectronic, relate to semiconductor device structure and preparation method, specifically parallel PIN structure β irradiation battery of a kind of silicon carbide-based extension GaN and preparation method thereof, can be used for power supply and the unattended occasion for a long time such as the small circuit such as minute mechanical and electrical system and Aero-Space, deep-sea, polar region.
Technical background
Along with the demand of people for low-power consumption, long-life, high reliability and small size power-supply unit, and the concern to nuclear waste disposal, minisize nuclear battery becomes and receives much concern.Minisize nuclear battery is because its outstanding feature can be used to solve the long-term powerup issue of robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.And be expected to replace solar cell and thermoelectric (al) type radioisotope battery, at space flight and aviation field, solve micro-/receive the long-term powerup issue of satellite, deep space unmanned probing device and ion propeller etc.
Nineteen fifty-three, beta (β-Particle) radial energy that utilizes isotope decay to produce produced electron-hole pair in semiconductor by Rappaport research discovery, and this phenomenon is called as β-Voltaic Effect.Nineteen fifty-seven, first Elgin-Kidde is used in power supply supply side by β-Voltaic Effect, successfully produces first radioisotope micro battery β-Voltaic Battery.From 2006, along with the progress of semiconductor material with wide forbidden band SiC preparation and technology, there is the relevant report of the radioisotope micro battery based on SiC.
As a kind of important third generation semiconductor, people are more and more to the concern of GaN in recent years.Because its energy gap is large, thermal conductivity is high, and the device working temperature of making is high, and voltage breakdown is high.In addition, GaN material is considered to a kind of desirable anti-irradiation semiconductor material always, and along with the development of nuclear technology and space technology, GaN material and device thereof are used to work under the very strong exceedingly odious condition of radiation.
The Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose is disclosed by Zhang Lin in Chinese patent CN101325093A.Because schottky contact layer in this schottky junction nuclear battery covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only has part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery.Therefore, the loss of the nuclear battery projectile energy of this structure is large, and energy conversion efficiency is lower.
Document " Demonstration of a4H SiC betavoltaic cell " has been introduced the C.I.Tomas by USA New York Cornell university, M.V.S.Chandrashekhar, and the people such as Hui Li have proposed silit PN junction formula nuclear battery.The substrate that this structure adopts is the highly doped substrate of P type, and immature in the existing technique of its Grown epitaxial loayer, therefore, easily introduces surface imperfection, and device creepage is large, and energy conversion rate is lower.
Document " Demonstration of a tadiation resistant; hight efficiency SiC betavoltaic " has been introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy and S.Rodgers, the people such as T.George have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 1.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, P type Ohm contact electrode 6, the highly doped SiC layer 4 of P type, P type SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate 1 of N-shaped and N-type Ohm contact electrode 5.In this structure, only have the raw charge carrier of irradiation in depletion layer and in a near minority diffusion length to be collected.And, for avoiding Ohm contact electrode to stop incident ion, P type Ohmic electrode is made in to a corner of device, make from P type Ohmic electrode the raw charge carrier of the irradiation away from transport process by compound, reduce energy transformation ratio, reduced the output current of battery.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, parallel PIN structure β irradiation battery of a kind of extension GaN and preparation method thereof is proposed, the barrier effect of high energy β particle radiator beta-ray being given off with elimination metal electrode, increase radiator beta-ray and semi-conductive contact area simultaneously, improve the utilization factor of radiator beta-ray, thereby improve output current and the output voltage of battery.
Technical scheme of the present invention is achieved in that
One. the parallel PIN structure β irradiation battery of extension GaN of the present invention, comprising: PIN unit and radiator beta-ray, is characterized in that:
Described PIN unit adopts by the parallel connection of upper and lower two PIN knot and forms; Lower PIN knot is followed successively by from bottom to top, and N-type Ohm contact electrode 5, doping content are lx10 18cm -3the highly doped 4H-SiC substrate 1 of N-type, doping content be 1x10 15～3x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be 1x10 19～5.5x10 19cm -3the highly doped GaN epitaxial loayer 3 of P type and P type Ohm contact electrode 4, upper PIN knot is followed successively by from bottom to top, P type Ohm contact electrode 4, doping content are 1x10 19～5.5x10 19cm -3the highly doped GaN epitaxial loayer 3 of P type, doping content be 1x10 15～3x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be lx10 18cm -3the highly doped 4H-SiC substrate 1 of N-type and N-type Ohm contact electrode 5;
The one side that described two PIN tie its P type Ohm contact electrode 4 contacts, and in upper and lower PIN knot, groove forms Mirror Symmetry, the integrative-structure mutually connecting;
In each PIN knot, be provided with n groove 6, n >=2 wherein, the interior radiator beta-ray 7 that is all placed with of each groove 6, to realize making full use of high energy β particle.。
As preferably, described radiator beta-ray 7 adopts the promethium that nickel that relative atomic masses are 63 or relative atomic mass are 147, i.e. Ni 63or Pm 147.
As preferably, the degree of depth h of described groove 6 meets m+q<h<m+r+q, wherein m is the thickness of the highly doped GaN epitaxial loayer 3 of P type, and r is the thickness of the low-doped SiC epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode (4).
As preferably, the width L of described groove 6 meets L≤2g, and wherein, g is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in radiator beta-ray, for radiator beta-ray, is Ni 63, its value is: g=6 μ m is Pm for radiator beta-ray 147, its value is: g=16 μ m.
As preferably, the spacing d of described adjacent two grooves 6 meets d>=i, and wherein, i is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in 4H-SiC, for radiator beta-ray, is Ni 63, its value is: i=10 μ m is Pm for radiator beta-ray 147, its value is: i=15 μ m.
As preferably, it is lx10 that described substrate 1 adopts doping content 18cm -3n-type 4H-SiC.
Two. preparation method of the present invention comprises the following steps:
(1) make lower PIN knot:
1.1) SiC print is cleaned, to remove surface contaminant;
1.2) utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10 15～3x10 15cm -3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5～10 μ m;
1.3) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 ℃ and keep 10min with clean surface; To passing into flow in reaction chamber, be respectively 52.3 μ molmin again -1, 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin -1, 8.93mmolmin -1, 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 1x10 19～5.5x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 0.5～1.5 μ m;
1.4) in the highly doped GaN epi-layer surface of P type, utilize metal Ti/Au that electron-beam vapor deposition method deposit a layer thickness is 100nm/400nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 ℃;
1.5) according to the position of nuclear battery groove, be made into reticle; At the Ti/Au of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ti/Au metal level to corrosion window place corrodes, and exposes the highly doped GaN epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
1.6) utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of the P type exposing, carving the degree of depth is 6～11.5 μ m, and width is 5～14 μ m, and spacing is n groove, wherein n >=2 of 12～25 μ m.
1.7) method that adopts deposit or smear is placed radiator beta-ray in groove, obtains being with fluted lower PIN knot;
(2) repeating step 1.1) to step 1.7) PIN ties in makings.
(3) utilize bonding method that upper PIN knot and the P type Metal Contact electrode of lower PIN knot are pressed together, complete the making of the parallel PIN structure β irradiation battery of extension GaN.
The present invention compared with prior art tool has the following advantages:
1. the present invention is placed in groove by radiator beta-ray, and the high energy β particle that radiator beta-ray is produced is directly injected the space charge region of PIN knot, has reduced the energy loss of high energy β particle, thereby has improved the output current of collection of energy rate and battery;
2. the present invention is because groove width is not more than the twice of high energy β particle average incident degree of depth in radiator beta-ray material that radiator beta-ray discharges, significantly reduce the energy attenuation of high energy β particle in radiator beta-ray inside, improved the output current of collection of energy rate and battery;
3. the present invention is because the energy gap of the backing material 4H-SiC adopting is larger than the energy gap of traditional Si, and radiation-resisting performance is better, can reduce the damage of high energy β particle to device, improves the operating voltage of battery, extends the serviceable life of battery simultaneously;
4. the present invention is because the energy gap of the highly doped epitaxial loayer GaN of P type adopting is larger than the energy gap of SiC, and radiation-resisting performance is better, has improved the operating voltage of battery.
5. the present invention, due to by two in parallel placements of PIN knot, has further improved the output voltage of battery.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of existing PIN nuclear battery;
Fig. 2 is the schematic cross-section of the parallel PIN structure β irradiation battery of extension GaN of the present invention;
Fig. 3 is the schematic flow sheet that the present invention makes the parallel PIN structure β irradiation battery of extension GaN.
Embodiment
With reference to Fig. 2, irradiation battery of the present invention, comprising: PIN unit and radiator beta-ray, and PIN unit consists of the parallel connection of upper and lower two PIN knot; Lower PIN knot is followed successively by from bottom to top, and N-type Ohm contact electrode 5, doping content are lx10 18cm -3the highly doped 4H-SiC substrate 1 of N-type, doping content be 1x10 15～3x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be 1x10 19～5.5x10 19cm -3the highly doped epitaxial loayer 3 of P type GaN and P type Ohm contact electrode 4, upper PIN knot is followed successively by from bottom to top, P type Ohm contact electrode 4, doping content are 1x10 19～5.5x10 19cm -3the highly doped GaN epitaxial loayer 3 of P type, doping content be 1x10 15～3x10 15cm -3the low-doped SiC epitaxial loayer 2 of N-type, doping content be lx10 18cm -3the highly doped 4H-SiC substrate 1 of N-type and N-type Ohm contact electrode 5, these two PIN tie its P type Ohm contact electrode 4 and contact by bonding method; In each PIN knot, be provided with n groove 6, n>=2 wherein, its degree of depth h meets m+q<h<m+r+q, m is the thickness of the highly doped GaN epitaxial loayer 3 of P type, r is the thickness of the low-doped SiC epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4, and its width L meets L≤2g, g is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in radiator beta-ray, for radiator beta-ray, is Ni 63, its value is: g=6 μ m is Pm for radiator beta-ray 147, its value is: g=16 μ m, and the spacing d of adjacent two grooves 6 meets d>=i, i is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray 7 in 4H-SiC, for radiator beta-ray, is Ni 63, its value is: i=10 μ m is Pm for radiator beta-ray 147, its value is: i=15 μ m; Groove in upper and lower PIN knot forms Mirror Symmetry, the integrative-structure mutually connecting; Radiator beta-ray 7 is placed in groove 6, to produce high energy β particle.
Battery in working order under, the most of high energy β particle radiating from radiator beta-ray is directly injected into the space charge region of the highly doped GaN epitaxial loayer 3 of P type and low-doped SiC epitaxial loayer 2 near interfaces of N-type, and then excites charge carrier, forms output current.
With reference to Fig. 3, the method that the present invention makes the parallel PIN structure β irradiation battery of extension GaN provides following three embodiment:
Embodiment 1, and preparing radiator beta-ray is Ni 63, there is the parallel PIN structure β irradiation battery of the extension GaN of two grooves.
Step 1: make lower PIN knot.
(1.1) clean 4H-SiC print, to remove surface contaminant, as shown in Fig. 3 (a).
(1.1.1) by doping content, be lx10 18cm -3highly doped N-shaped 4H-SiC substrate print at NH 4oH+H 2o 2reagent soaks sample 10min, takes out post-drying, to remove sample surfaces organic remains;
(1.1.2) the 4H-SiC print of removing after surperficial organic remains is re-used to HCl+H 2o 2reagent soaks sample 10min, takes out post-drying, to remove ionic contamination.
(1.2) the low-doped SiC epitaxial loayer of epitaxial growth N-type, as shown in Fig. 3 (b).
On SiC print after cleaning, utilize the low-doped SiC epitaxial loayer of N-type of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x10 15cm -3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5 μ m.
(1.3) the highly doped GaN epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
(1.3.1) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 ℃, keep 10min;
(1.3.2) pressure of reaction chamber is made as to 2x10 4pa, uses N 2and H 2mixed gas as carrier gas, to passing into flow in reaction chamber, be respectively 52.3 μ molmin -1and 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer;
(1.3.3) reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin -1, 8.93mmolmin -1with 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 1x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 0.5 μ m.
(1.4) deposit Ohm contact electrode, as shown in Fig. 3 (d).
(1.4.1) the SiC print completing after the highly doped GaN outer layer growth of P type is carried out to RCA standard cleaning;
(1.4.2) print after cleaning is put on the microslide of electron beam evaporation deposition machine, adjustment microslide is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 * 10 -4pa, adjusting line is 40mA, the Ti/Au metal level that is 100nm/400nm in surface deposition a layer thickness of the highly doped GaN epitaxial loayer of the P of SiC print type;
(1.4.3) utilize electron-beam vapor deposition method, at the substrate Si C Ni metal level that back side deposition thickness of extension is not 300nm.
(1.4.4), at 1100 ℃, in nitrogen atmosphere, short annealing is 3 minutes.
(1.5) on the Ti/Au metal level of SiC extension one outgrowth, carve structure graph window, as shown in Fig. 3 (e).
(1.5.1) spin coating one deck photoresist on the Ti/Au layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of two grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window;
(1.5.2) utilize reactive ion technique etching Ti/Au metal level, reacting gas adopts oxygen, on the highly doped GaN epitaxial loayer of P type exposing, obtains the etching window of P type Ohm contact electrode and groove at etching groove window.
(1.6) etching groove, as shown in Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 6 μ m, and width is 5 μ m, and spacing is two grooves of 12 μ m.
(1.7) place radiator beta-ray, as shown in Fig. 3 (g).
The method that adopts deposit or smear is placed radiator beta-ray Ni in each groove 63, obtain being with fluted lower PIN knot.
Step 2: PIN knot in making.
Repeating step (1.1), to step (1.7), obtains PIN knot.
Step 3: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain the parallel PIN structure β irradiation battery of extension GaN, as shown in Fig. 3 (h).
Embodiment 2, and preparing radiator beta-ray is Ni 63, there is the parallel PIN structure β irradiation battery of the extension GaN of eight grooves.
Step 1: make lower PIN knot.
1a) clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step (1.1) of embodiment 1.
The low-doped SiC epitaxial loayer of 1b) epitaxial growth N-type, as Fig. 3 (b).
On SiC print after cleaning, utilize the low-doped SiC epitaxial loayer of N-type of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and completing nitrogen doped concentration is 2x10 15cm -3, thickness is the growth of the low-doped SiC epitaxial loayer of the N-type of 8 μ m.
1c) the highly doped GaN epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
1c.1) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 ℃, keep 10min;
1c.2) pressure of reaction chamber is made as to 2x10 4pa, uses N 2and H 2mixed gas as carrier gas, to passing into flow in reaction chamber, be respectively 52.3 μ molmin -1and 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer;
1c.3) reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin -1, 8.93mmolmin -1with 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 3x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 1 μ m.
1d) deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step (1.4) of embodiment mono-.
1e) on the Ti/Au metal level of SiC extension one outgrowth, carve structure graph window, as Fig. 3 (e).
1e.1) spin coating one deck photoresist on the Ti/Au layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of eight grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window;
1e.2) utilize reactive ion technique etching Ti/Au metal level, reacting gas adopts oxygen, exposes the highly doped SiC epitaxial loayer of P type of extension, obtains the etching window of P type Ohm contact electrode and groove.
1f) etching groove, as Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 9 μ m, and width is 10 μ m, and spacing is eight grooves of 20 μ m.
1g) place radiator beta-ray, as Fig. 3 (g).
This step is identical with the step (1.7) of embodiment mono-.
Step 2: PIN knot in making.
Repeating step 1a) to step 1g), obtain PIN knot.
Step 3: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain the parallel PIN structure β irradiation battery of extension GaN, as Fig. 3 (h).
Embodiment 3, and preparing radiator beta-ray is Pm 147, there is the parallel PIN structure β irradiation battery of the extension GaN of 18 grooves.
Steps A: PIN knot in making.
(A1) clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step (1.1) of embodiment 1.
(A2) on the SiC print after cleaning, utilize the low-doped SiC epitaxial loayer of N-type of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen.Obtaining nitrogen doped concentration is 3x10 15cm -3, thickness is that the low-doped SiC epitaxial loayer of the N-type of 10 μ m is as Fig. 3 (b).
(A3) sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 ℃, keep 10min; Again the pressure of reaction chamber is made as to 2x10 4pa, uses N 2and H 2mixed gas as carrier gas, to passing into flow in reaction chamber, be respectively 52.3 μ molmin -1and 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin -1, 8.93mmolmin -1with 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, obtaining magnesium doping content is 5.5x10 19cm -3, thickness is that the highly doped GaN epitaxial loayer of the P type of 1.5 μ m is as Fig. 3 (c).
(A4) depositing metal contact electrode, as Fig. 3 (d).
This step is identical with the step (1.4) of embodiment mono-.
(A5) spin coating one deck photoresist on the Ti/Au layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of 18 grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window; Then utilize reactive ion technique etching Ti/Au metal level, reacting gas adopts oxygen, exposes the highly doped GaN epitaxial loayer of the P type SiC of extension, obtains the etching window of P type Ohm contact electrode and groove as Fig. 3 (e).
(A6) utilize inductively coupled plasma ICP lithographic technique, on the highly doped GaN epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 11.5 μ m, and width is 14 μ m, and spacing is 18 grooves of 25 μ m, remove again the photoresist of Ti/Au layer on surface of metal, as Fig. 3 (f).
(A7) method that adopts deposit or smear is placed radiator beta-ray Pm in each groove 147, obtain being with fluted PIN knot as Fig. 3 (g).
Step B: PIN knot in making.
Repeating step (A1), to step (A7), obtains PIN knot.
Step C: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain the parallel PIN structure β irradiation battery of extension GaN as Fig. 3 (h).

Claims (7)

1. a parallel PIN structure β irradiation battery of extension GaN, comprising: PIN unit and radiator beta-ray, is characterized in that:
Described PIN unit, adopts upper and lower two PIN knot formation in parallel; Lower PIN knot is followed successively by from bottom to top, and N-type Ohm contact electrode (5), the highly doped 4H-SiC substrate of N-type (1), doping content are 1x10 15～3x10 15cm -3the low-doped SiC epitaxial loayer of N-type (2), doping content be 1x10 19～5.5x10 19cm -3the highly doped GaN epitaxial loayer of P type (3) and P type Ohm contact electrode (4), upper PIN knot is followed successively by from bottom to top, P type Ohm contact electrode (4), doping content are 1x10 19～5.5x10 19cm -3the highly doped GaN epitaxial loayer of P type (3), doping content be 1x10 15～3x10 15cm -3the highly doped 4H-SiC substrate of the low-doped SiC epitaxial loayer of N-type (2), N-type (1) and N-type Ohm contact electrode (5);
The one side that described two PIN tie its P type Ohm contact electrode (4) contacts, and in upper and lower PIN knot, groove forms Mirror Symmetry, the integrative-structure mutually connecting;
In each PIN knot, be provided with n groove (6), wherein n >=2, are all placed with radiator beta-ray (7) in each groove (6), to produce radiation high energy β particle.
2. battery according to claim 1, is characterized in that radiator beta-ray (7) adopts the promethium that nickel that relative atomic mass is 63 or relative atomic mass are 147, i.e. Ni 63or Pm 147.
3. battery according to claim 1, the degree of depth h that it is characterized in that groove (6) meets m+q<h<m+r+q, wherein m is the thickness of the highly doped epitaxial loayer of P type (3), r is the thickness of the low-doped epitaxial loayer of N-type (2), and q is the thickness of P type Ohm contact electrode (4).
4. battery according to claim 1 and 2, is characterized in that the width L of groove (6) meets L≤2g, and wherein, g is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray (7) in radiator beta-ray, for radiator beta-ray, is Ni 63, its value is: g=6 μ m is Pm for radiator beta-ray 147, its value is: g=16 μ m.
5. battery according to claim 1, is characterized in that the spacing d of adjacent two grooves (6) meets d>=i, and wherein, i is the average incident degree of depth of the high energy β particle that discharges of radiator beta-ray (7) in 4H-SiC, for radiator beta-ray, is Ni 63, its value is: i=10 μ m is Pm for radiator beta-ray 147, its value is: i=15 μ m.
6. battery according to claim 1, is characterized in that it is lx10 that substrate (1) adopts doping content 18cm -3n-type 4H-SiC.
7. a preparation method for the parallel PIN structure β irradiation battery of extension GaN, comprises the following steps:
(1) make lower PIN knot:
1.1) clean: SiC print is cleaned, to remove surface contaminant;
1.2) the low-doped SiC epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10 15～3x10 15cm -3, thickness is the low-doped SiC epitaxial loayer of the N-type of 5～10 μ m;
1.3) the highly doped GaN epitaxial loayer of growing P-type: the sample after the low-doped SiC epitaxial loayer of growth N-type is put into chemical vapor deposition CVD stove, at H 2under atmosphere, be heated to 1100 ℃ and keep 10min with clean surface; To passing into flow in reaction chamber, be respectively 52.3 μ molmin again -1, 0.035molmin -1trimethyl aluminium and NH 3, the thick AlN of 60nm grows on low-doped SiC epitaxial loayer; Then reaction chamber is cooled to 1050 ℃, to passing into flow in reaction chamber, is respectively 6.5 μ molmin -1, 8.93mmolmin -1, 0.18 μ molmin -1trimethyl gallium, NH 3and CP 2mg, completing magnesium doping content is 1x10 19～5.5x10 19cm -3, thickness is the highly doped GaN epitaxial loayer of the P type of 0.5～1.5 μ m;
1.4) deposit Ohm contact electrode: utilize in the highly doped GaN epi-layer surface of P type metal Ti/Au that electron-beam vapor deposition method deposit a layer thickness is 100nm/400nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 ℃;
1.5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ti/Au of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ti/Au metal level to corrosion window place corrodes, and exposes the highly doped GaN epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
1.6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped GaN epitaxial loayer of the P type exposing is 6～11.5 μ m, and width is 5～14 μ m, and spacing is n groove, wherein n >=2 of 12～25 μ m.
1.7) place radiator beta-ray: the method that adopts deposit or smear, in groove, place radiator beta-ray, obtain being with fluted lower PIN knot.
(2) repeating step 1.1) to step 1.7) PIN ties in makings.
(3) utilize bonding method that the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, complete the making of the parallel PIN structure β irradiation battery of extension GaN.
CN201410330952.XA 2014-06-29 2014-07-13 Epitaxial GaN parallel type PIN structure beta irradiation battery and preparation method thereof Pending CN104103333A (en)

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