CN104051047B - Sandwich serial-type PIN-structure alpha irradiation battery and manufacturing method thereof - Google Patents
Sandwich serial-type PIN-structure alpha irradiation battery and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a sandwich serial-type PIN-structure alpha irradiation battery and a manufacturing method thereof. The sandwich serial-type PIN-structure alpha irradiation battery and the manufacturing method thereof mainly solve the problems that an existing nuclear battery is low in energy transformation ratio and output power. The sandwich serial-type PIN-structure alpha irradiation battery comprises an upper PIN junction, a lower PIN junction and an alpha radioactive source layer, wherein the upper PIN junction and the lower PIN junction are connected in series. The upper PIN junction sequentially comprises an N-type epitaxial layer ohmic contact electrode, an N-type highly-doped epitaxial layer, a P-type low-doped epitaxial layer, a P-type SiC substrate and a P-type ohmic contact electrode from bottom to top. The lower PIN junction sequentially comprises an N-type ohmic contact electrode, an N-type SiC substrate, an N-type low-doped epitaxial layer, a P-type highly-doped epitaxial layer and a P-type epitaxial layer ohmic contact electrode from bottom to top. The alpha radioactive source layer is clamped between the epitaxial layer ohmic contact electrode of the upper PIN junction and the epitaxial layer ohmic contact electrode of the lower PIN junction, so that high-energy alpha particles are fully utilized. The sandwich serial-type PIN-structure alpha irradiation battery and the manufacturing method thereof have the advantages that the contact area of a radioactive source and a semiconductor is large, the nuclear raw material utilization rate and the energy harvesting rate are high, and the output voltage of the battery is large; the battery can supply electricity to a small circuit enduringly.
Description
Technical field
The invention belongs to microelectronic, it is related to semiconductor device structure and preparation method, specifically a kind of carbonization
Sandwich tandem PIN structural alpha irradiation battery of silicon substrate and preparation method thereof, can be used for the fine circuit such as minute mechanical and electrical system and boat
Empty space flight, deep-sea, polar region etc. need to power and unattended occasion for a long time.
Technical background
With people for low-power consumption, long-life, high reliability and small size power supply unit demand, and to nuke rubbish
The concern processing, minisize nuclear battery becomes more to pay close attention to.Minisize nuclear battery can be used to solve miniature tube due to its prominent feature
Pipeline robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.
Long-term powerup issue.And be expected to replace solaode and thermoelectric (al) type radioisotope battery, in space flight and aviation field
Solve the long-term powerup issue of micro-/Nano satellite, deep space unmanned probing device and ion propeller etc..
Nineteen fifty-three is studied by Rappaport and finds, using beta produced by isotope decay (α-Particle) ray
Electron-hole pair can be produced in quasiconductor, this phenomenon is then referred to as β-Voltaic Effect.Nineteen fifty-seven, Elgin-Kidde
First β-Voltaic Effect is used in power supply supply side, successfully produces first radioisotope micro battery β-Voltaic
Battery.From 2006, with the progress of semiconductor material with wide forbidden band SiC preparation and Technology, occur in that based on SiC's
The relevant report of radioisotope micro battery.In the application, the high energy particle utilization rate ratio due to exciting is relatively low, collection of energy for nuclear battery
Rate is low, limits the output voltage of battery.
The Schottky junction type based on SiC being proposed by Zhang Lin, Guo Hui et al. is disclosed in Chinese patent CN 101325093A
Nuclear battery.Because in this schottky junction nuclear battery, schottky contact layer covers whole cell area, incoming particle reaches device table
Behind face, all can be stopped by schottky contact layer, only some particles can enter device inside, and enters the particle of depletion region
Just the output of battery can be contributed.Therefore, the nuclear battery projectile energy loss of this structure is big, energy conversion effect
Rate is relatively low.
Document " Demonstration of a 4H SiC betavoltaic cell " describes by USA New York
The C.I.Tomas of Cornell university, M.V.S.Chandrashekhar, Hui Li et al. propose carborundum PN junction formula nuclear power
Pond.The substrate that this structure adopts is the highly doped substrate of p-type, and immature in the existing process of its Grown epitaxial layer,
Therefore, it is easily introduced surface defect, device creepage is big, and energy conversion rate is relatively low.
Document " Demonstration of a tadiation resistant, hight efficiency SiC
Betavoltaic " describes by the C.J.Eiting of New Mexico Qynergy Corporation,
V.Krishnamoorthy and S.Rodgers, T.George et al. propose carborundum p-i-n junction formula nuclear battery jointly, such as Fig. 1
Shown.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, p-type Ohm contact electrode 6, the highly doped SiC layer of p-type 4, p-type
SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate of N-shaped 1 and N-type Ohm contact electrode 5.In this structure, only in depletion layer and
The raw carrier of irradiation in its neighbouring minority diffusion length can be collected.And, for avoiding Ohm contact electrode to stop
Incident ion, p-type Ohmic electrode is made in a corner of device so that giving birth to carrier from p-type Ohmic electrode irradiation farther out
Transport process is combined, is reduced energy transformation ratio, reduced the output current of battery.
Content of the invention
Present invention aims to the deficiency of above-mentioned prior art, a kind of sandwich tandem PIN structural alpha irradiation is proposed
Battery and preparation method thereof, to improve the utilization rate of αsource, thus improve output current and the output voltage of battery.
The technical scheme is that and be achieved in that：
One. the sandwich tandem PIN structural alpha irradiation battery of the present invention, including：PIN unit and αsource layer 7 ', it is special
Levy and be：
Described PIN unit, in series using upper and lower two PIN junction；Upper PIN junction is followed successively by from bottom to top, N-type epitaxy layer
The highly doped epitaxial layer of Ohm contact electrode 11, N-type 10, the low-doped epitaxial layer of p-type 9, p-type SiC substrate 8, p-type Ohm contact electrode
6；Lower PIN junction is followed successively by from bottom to top, and N-type Ohm contact electrode 5, N-shaped SiC substrate 14, the low-doped epitaxial layer of N-type 13, p-type are high
Doped epitaxial layer 4 ', p-type extension ohm contact electrode 12；
αsource layer 7 ', is clipped in the N-type epitaxy layer Ohm contact electrode 11 of PIN junction and lower PIN junction p-type epitaxial layer Europe
Between nurse contact electrode 12, to realize high-energyα-particle is made full use of.
Preferably, described αsource layer 7 ' be 241 using relative atomic mass americium element or relative atomic mass
Plutonium element for 238, i.e. Am241Or Pu238.
Preferably, the thickness h of described αsource layer 7 ' meets h≤m, the high energy α that wherein m is discharged by αsource
Average incident depth in αsource material for the particle, is Am for αsource241, its value is：M=7.5 μm, for α
Radioactive source is Pu238, its value is：M=10 μm.
Preferably, the thickness L of the low-doped epitaxial layer of described p-type 9 and the low-doped epitaxial layer of N-type 13 meets L >=g, its
In, high-energyα-particle that g is discharged by the αsource average incident depth in 4H-SiC, is Am for αsource241, its
Value is：I=10 μm, be Pu for αsource238, its value is：I=18.2 μm.
Preferably, described p-type SiC substrate 8, N-shaped SiC substrate 14 are 8x 10 all using doping content17cm-3's
4H-SiC substrate, the low-doped epitaxial layer of p-type 9, the highly doped epitaxial layer of N-type 10, the highly doped epitaxial layer 4 ' of p-type, the low-doped extension of N-type
Layer 13 is the 4H-SiC material of extension, to improve life-span and the open-circuit voltage of battery.
Two. the preparation method of the present invention comprises the following steps：
The first step, PIN junction in making：
1.1) p-type SiC substrate is carried out, to remove surface contaminant；
1.2) utilize chemical vapor deposition CVD one layer of doping content of p-type SiC substrate surface epitaxial growth after cleaning
For 1x 1015～3x 1015cm-3, thickness is 15～28 μm of the low-doped epitaxial layer of p-type；
1.3) using chemical vapor deposition CVD in p-type one layer of doping content of low-doped epi-layer surface epitaxial growth it is
1x 1019～3x 1019cm-3, thickness is 0.1～0.2 μm of the highly doped epitaxial layer of N-type；
1.4) utilize electron-beam vapor deposition method at the back side of the highly doped epi-layer surface of N-type and the non-extension of p-type SiC substrate respectively
Deposition thickness is the Ni metal level of 300nm, as N-type epitaxy layer Ohm contact electrode and p-type Ohm contact electrode；
Second step, makes lower PIN junction：
2.1) N-shaped SiC substrate is carried out, to remove surface contaminant；
2.2) utilize chemical vapor deposition CVD one layer of doping content of N-shaped SiC substrate surface epitaxial growth after cleaning
For 1x 1015～3x 1015cm-3, thickness is 15～28 μm of the low-doped epitaxial layer of N-type；
2.3) using chemical vapor deposition CVD in N-type one layer of doping content of low-doped epi-layer surface epitaxial growth it is
1x 1019～3x 1019cm-3, thickness is 0.1～0.2 μm of the highly doped epitaxial layer of p-type；
2.4) utilize electron-beam vapor deposition method to be the Al metal level of 300nm in p-type highly doped epi-layer surface deposition thickness, make
For p-type extension ohm contact electrode；The Ni metal level being 300nm in the back side deposition thickness of the non-extension of N-shaped SiC substrate, makees
For N-type Ohm contact electrode；
2.5) prepare αsource layer：Using molecular plating, thick layer is plated on the Al metal level that above-mentioned N-shaped SiC substrate deposits
Spend the αsource layer for 4～8 μm；
Upper PIN junction is bonded together with lower PIN junction by the 3rd step using bonding method, makes αsource layer be clipped in PIN junction
N-type epitaxy layer Ohm contact electrode and lower PIN junction p-type extension ohm contact electrode in the middle of, formed sandwich tandem PIN
Structure alpha irradiation battery.
The present invention compared with prior art has the advantage that：
1. the present invention is due to being clipped in αsource layer between the extension ohm contact electrode of upper and lower two PIN junction, than
In prior art, radioactive source is placed on the upper surface of battery, saves αsource material, improve the utilization rate of αsource,
Thus improve the capacity usage ratio of battery；
2. the present invention is only 0.1～0.2 μm due to the thickness of p-type and the highly doped epitaxial layer of N-type, and αsource layer
Average incident depth in αsource material for the thickness high-energyα-particle that no more than αsource is discharged, can reduce high energy α
Decay in highly doped epitaxial layer and αsource layer for the particle, improves collection of energy rate；
3. the high energy α that the present invention is discharged not less than αsource by N-type and the low-doped epitaxy layer thickness of p-type of extension
Average incident depth in 4H-SiC for the particle, it is possible to reduce decay in low-doped epitaxial layer for the high-energyα-particle is so that high energy
Alpha-particle concentrates on the space-charge region near highly doped epitaxial layer and low-doped epitaxial layer interface, improves energy transformation ratio；
4. the present invention, due to being placed in series two PIN junction, improves the output voltage of battery.
5. the present invention due to the energy gap using backing material 4H-SiC bigger than the energy gap of traditional Si, Flouride-resistani acid phesphatase is special
Property more preferably, the damage to device for the high-energyα-particle can be reduced, improve the running voltage of battery, extend the use longevity of battery simultaneously
Life；
Brief description
Fig. 1 is the schematic cross-section of existing PIN nuclear battery；
Fig. 2 is the schematic cross-section of the present invention sandwich tandem PIN structural alpha irradiation battery；
Fig. 3 is the flow chart that the present invention makes sandwich tandem PIN structural alpha irradiation battery；
Fig. 4 is the schematic flow sheet of PIN junction in present invention making；
Fig. 5 is the schematic flow sheet that the present invention makes lower PIN junction.
Specific embodiment
Reference Fig. 2, the sandwich tandem PIN structural alpha irradiation battery of the present invention, including：PIN unit and αsource layer 7 ',
Described PIN unit is in series by upper and lower two PIN junction, wherein：
Upper PIN junction includes N-type epitaxy layer Ohm contact electrode 11, the highly doped epitaxial layer of N-type 10, the low-doped epitaxial layer of p-type
9th, p-type SiC substrate 8, p-type Ohm contact electrode 6.Wherein, N-type epitaxy layer Ohm contact electrode 11 is the Ni that thickness is 300nm
Metal level；The thickness of the highly doped epitaxial layer of N-type 10 is 0.1～0.2 μm, and it is located above N-type epitaxy layer Ohm contact electrode 11；
The thickness of the low-doped epitaxial layer of p-type 9 is 15～28 μm, and it is located at the top of the highly doped epitaxial layer of N-type 10；P-type SiC substrate 8 is
Concentration is 8x 1017cm-3P-type 4H-SiC substrate, its be located at the low-doped epitaxial layer of p-type 9 top；P-type Ohm contact electrode 6
It is the Ni metal level that thickness is 300nm, it is located at the top of p-type SiC substrate 8.
Lower PIN junction, highly doped including N-type Ohm contact electrode 5, N-shaped SiC substrate 14, the low-doped epitaxial layer of N-type 13, p-type
Epitaxial layer 4 ', p-type extension ohm contact electrode 12.Wherein, N-type Ohm contact electrode 5 is the Ni metal that thickness is 300nm
Layer；N-shaped SiC substrate 14 is concentration is 8x 1017cm-3N-shaped 4H-SiC substrate, its be located at N-type Ohm contact electrode 5 upper
Side；The thickness of the low-doped epitaxial layer of N-type 13 is 15～28 μm, and it is located at the top of N-shaped SiC substrate 14；The highly doped epitaxial layer of p-type
4 ' thickness is 0.1～0.2 μm, and it is located at the top of the low-doped epitaxial layer of N-type 13；P-type extension ohm contact electrode 12 is
Thickness is the Al metal level of 300nm, and it is located above the highly doped epitaxial layer 4 ' of p-type；
The thickness of αsource layer 7 ' is 4～8um, and it is located at the top of p-type extension ohm contact electrode 12.
Upper and lower PIN junction is bonded, and makes αsource layer 7 ' be clipped in the N-type epitaxy layer Ohm contact electrode 11 of PIN junction
And lower PIN junction p-type extension ohm contact electrode 12 between.
Battery in working order under, the high-energyα-particle radiating from αsource layer 7 ' is each passed through upper and lower two PIN junction
N-type epitaxy layer Ohm contact electrode 11, p-type extension ohm contact electrode 12, be injected into the highly doped epitaxial layer 4 ' of p-type and N
The space-charge region of the low-doped epitaxial layer of type 13 near interface, and the highly doped epitaxial layer of N-type 10 and the low-doped epitaxial layer of p-type 9
The space-charge region of near interface, and then excite carrier, form output current.
With reference to Fig. 3, the method that the present invention makes sandwich tandem PIN structural alpha irradiation battery provides following three embodiment：
Embodiment 1, preparing sandwich radioactive source is Am241, αsource thickness degree is 4 μm of sandwich tandem PIN structural α spoke
According to battery.
Step 1:PIN junction in making.
With reference to Fig. 4, the enforcement of this step is as follows：
(1a) clean p-type SiC substrate, to remove surface contaminant, such as shown in Fig. 4 (a)：
(1a.1) doping content is 8x 1017cm-3Highly-doped p-type 4H-SiC substrate in NH4OH+H2O2Soak in reagent
Bubble 10min, takes out post-drying, to remove sample surfaces organic remains；
(1a.2) the p-type SiC substrate removing after the organic remains of surface is reused HCl+H2O2Reagent soaks 10min,
Take out post-drying, to remove ionic contamination.
(1b) the low-doped epitaxial layer of epitaxial growth p-type, such as shown in Fig. 4 (b)：
The p-type doping of chemical vapor deposition CVD method epitaxial growth aluminum doping is utilized on p-type SiC substrate after cleaning
Epitaxial layer.Its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carrier gas
For pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminum doping content is 1x 1015cm-3, thickness is that 15 μm of p-type is low-doped outer
Prolong layer.
(1c) the highly doped epitaxial layer of epitaxial growth N-type, such as shown in Fig. 4 (c)：
On the low-doped epitaxial layer of p-type of growth, the N-type using chemical vapor deposition CVD epitaxial growth N doping is highly doped
Miscellaneous epitaxial layer, its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carries
Gas is pure hydrogen, and impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x 1019cm-3, thickness is that 0.1 μm of N-type is highly doped
Epitaxial layer.
(1d) deposit Ohm contact electrode, such as shown in Fig. 4 (d)：
(1d.1) RCA standard cleaning is carried out to the p-type SiC substrate completing after the highly doped outer layer growth of N-type；
(1d.2) print after cleaning is put on the microscope slide in electron beam evaporation deposition machine, adjustment microscope slide is to target
Distance be 50cm, and by reaction chamber pressure be evacuated to 5 × 10-4Pa, regulation line is 40mA, highly doped in the N-type of p-type SiC substrate
Surface deposition a layer thickness of miscellaneous epitaxial layer is the Ni metal level of 300nm, as N-type epitaxy layer Ohm contact electrode；
(1d.3) utilize electron-beam vapor deposition method, the Ni gold being 300nm in the back side deposition thickness of the non-extension of p-type SiC substrate
Belong to layer, as p-type Ohm contact electrode.
Step 2:Make lower PIN junction.
With reference to Fig. 5, the enforcement of this step is as follows：
(2a) clean N-shaped SiC substrate, to remove surface contaminant, such as shown in Fig. 5 (a)：
(2a.1) doping content is 8x 1017cm-3Doped n-type 4H-SiC substrate in NH4OH+H2O2Soak in reagent
Bubble 10min, takes out post-drying, to remove sample surfaces organic remains；
(2a.2) the N-shaped SiC substrate removing after the organic remains of surface is reused HCl+H2O2Reagent soaks 10min, takes
Go out post-drying, to remove ionic contamination.
(2b) the low-doped epitaxial layer of epitaxial growth N-type, such as shown in Fig. 5 (b)：
The n-type doping of chemical vapor deposition CVD method epitaxial growth N doping is utilized on N-shaped SiC substrate after cleaning
Epitaxial layer.Its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carrier gas
For pure hydrogen, impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x 1015cm-3, thickness is that 15 μm of N-type is low-doped outer
Prolong layer.
(2c) the highly doped epitaxial layer of epitaxial growth p-type, such as shown in Fig. 5 (c)：
On the low-doped epitaxial layer of N-type of growth, the p-type using the doping of chemical vapor deposition CVD epitaxial growth aluminum is highly doped
Miscellaneous epitaxial layer, its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carries
Gas is pure hydrogen, and impurity source is trimethyl aluminium, and obtaining aluminum doping content is 1x 1019cm-3, thickness is that 0.1 μm of p-type is highly doped
Epitaxial layer.
(2d) deposit Ohm contact electrode, such as shown in Fig. 5 (d)：
(2d.1) RCA standard cleaning is carried out to the N-shaped SiC substrate completing after the highly doped outer layer growth of p-type；
(2d.2) substrate after cleaning is put on the microscope slide in electron beam evaporation deposition machine, adjustment microscope slide is to target
Distance be 50cm, and by reaction chamber pressure be evacuated to 5 × 10-4Pa, regulation line is 40mA, highly doped in the p-type of N-shaped SiC substrate
Surface deposition a layer thickness of miscellaneous epitaxial layer is the Al metal level of 300nm, as p-type extension ohm contact electrode；
(2d.3) utilize electron-beam vapor deposition method, the Ni gold being 300nm in the back side deposition thickness of the non-extension of N-shaped SiC substrate
Belong to layer, as N-type Ohm contact electrode.
(2e) prepare αsource layer, such as shown in Fig. 5 (e)：
On the Al metal level of above-mentioned N-shaped SiC substrate deposit, using molecule electroplating method, use Am241Plating a layer thickness is 4 μm
αsource layer.
Step 3：Using bonding method, upper PIN junction is bonded together with lower PIN junction, makes αsource layer be clipped in PIN junction
In the middle of the p-type extension ohm contact electrode of N-type epitaxy layer Ohm contact electrode and lower PIN junction, form sandwich tandem PIN junction
Structure alpha irradiation battery, as shown in Figure 2.
Embodiment 2, preparing sandwich radioactive source is Am241, αsource thickness degree is 6 μm of sandwich tandem PIN structural α spoke
According to battery.
Step one：PIN junction in making.
With reference to Fig. 4, the enforcement of this step is as follows：
1a) clean p-type SiC substrate, to remove surface contaminant, the doping content of this p-type SiC substrate is 8x1017cm-3,
As shown in Fig. 4 (a)：
This step is identical with the step (1a) of embodiment one.
1b) the low-doped epitaxial layer of epitaxial growth p-type, such as shown in Fig. 4 (b)：
The p-type doping of chemical vapor deposition CVD method epitaxial growth aluminum doping is utilized on p-type SiC substrate after cleaning
Epitaxial layer.Its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carrier gas
For pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminum doping content is 2x 1015cm-3, thickness is that 22 μm of p-type is low-doped outer
Prolong layer.
1c) the highly doped epitaxial layer of epitaxial growth N-type, such as shown in Fig. 4 (c)：
On the low-doped epitaxial layer of p-type of growth, the N-type using chemical vapor deposition CVD epitaxial growth N doping is highly doped
Miscellaneous epitaxial layer, its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carries
Gas is pure hydrogen, and impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 2x 1019cm-3, thickness is that 0.15 μm of N-type is highly doped
Miscellaneous epitaxial layer.
1d) deposit Ohm contact electrode, such as shown in Fig. 4 (d)：
This step is identical with the step (1d) of embodiment one.
Step 2:Make lower PIN junction.
With reference to Fig. 5, the enforcement of this step is as follows：
2a) clean N-shaped SiC substrate, to remove surface contaminant, the doping content of this N-shaped SiC substrate is 8x 1017cm-3, such as shown in Fig. 5 (a)：
This step is identical with the step (2a) of embodiment 1.
2b) the low-doped epitaxial layer of epitaxial growth N-type, such as shown in Fig. 5 (b)：
The n-type doping of chemical vapor deposition CVD method epitaxial growth N doping is utilized on N-shaped SiC substrate after cleaning
Epitaxial layer.Its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carrier gas
For pure hydrogen, impurity source is liquid nitrogen, and completing nitrogen doped concentration is 2x 1015cm-3, thickness is that 22 μm of N-type is low-doped outer
Prolong the growth of layer.
2c) the highly doped epitaxial layer of epitaxial growth p-type, such as shown in Fig. 5 (c)：
Using the p-type of chemical vapor deposition CVD epitaxial growth Al-doping on the low-doped epitaxial layer of N-type of growth
Highly doped epitaxial layer, its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and third
Alkane, carrier gas is pure hydrogen, and impurity source is trimethyl aluminium, and completing aluminum doping content is 2x 1019cm-3, thickness is 0.15 μm of p-type
The growth of highly doped epitaxial layer.
2d) deposit Ohm contact electrode, such as shown in Fig. 5 (d)：
This step is identical with the step (2d) of embodiment one.
2e) prepare αsource layer, such as shown in Fig. 5 (e)：
On the Al metal level of above-mentioned N-shaped SiC substrate deposit, using molecule electroplating method, use Am241Plating a layer thickness is 6 μm
αsource layer.
Step 3：Using bonding method, upper PIN junction is bonded together with lower PIN junction, makes αsource layer be clipped in PIN junction
N-type epitaxy layer Ohm contact electrode and lower PIN junction p-type extension ohm contact electrode in the middle of, formed sandwich tandem PIN
Structure alpha irradiation battery, as shown in Figure 2.
Embodiment 3, preparing sandwich radioactive source α is Pu238, radioactive source thickness degree is 8 μm of sandwich tandem PIN structural α spoke
According to battery.
Step A：PIN junction in making.
With reference to Fig. 4, the enforcement of this step is as follows：
A1) clean p-type SiC substrate, to remove surface contaminant, the doping content of this p-type SiC substrate is 8x1017cm-3,
As Fig. 4 (a).
This step is identical with the step (1a) of embodiment one.
A2) the low-doped epitaxial layer of epitaxial growth p-type, such as Fig. 4 (b).
The p-type doping of chemical vapor deposition CVD method epitaxial growth aluminum doping is utilized on p-type SiC substrate after cleaning
Epitaxial layer.Its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carrier gas
For pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminum doping content is 3x 1015cm-3, thickness is that 28 μm of p-type is low-doped outer
Prolong layer.
A3) the highly doped epitaxial layer of epitaxial growth N-type, such as Fig. 4 (c).
On the low-doped epitaxial layer of p-type of growth, the N-type using chemical vapor deposition CVD epitaxial growth N doping is highly doped
Miscellaneous epitaxial layer, its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carries
Gas is pure hydrogen, and impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 3x 1019cm-3, thickness is that 0.2 μm of N-type is highly doped
Epitaxial layer.
A4 Ohm contact electrode, such as Fig. 4 (d)) are deposited.
This step is identical with the step (1d) of embodiment one.
Step B:Make lower PIN junction.
With reference to Fig. 5, the enforcement of this step is as follows：
B1) clean N-shaped SiC substrate, to remove surface contaminant, the doping content of this N-shaped SiC substrate is 8x1017cm-3,
As Fig. 5 (a).
This step is identical with the step (1a) of embodiment 1.
B2) the low-doped epitaxial layer of epitaxial growth N-type, such as Fig. 5 (b).
The n-type doping of chemical vapor deposition CVD method epitaxial growth N doping is utilized on N-shaped SiC substrate after cleaning
Epitaxial layer.Its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, carrier gas
For pure hydrogen, impurity source is liquid nitrogen, and completing nitrogen doped concentration is 3x 1015cm-3, thickness is that 28 μm of N-type is low-doped outer
Prolong the growth of layer.
B3) the highly doped epitaxial layer of epitaxial growth p-type, such as Fig. 5 (c).
Using the p-type of chemical vapor deposition CVD epitaxial growth Al-doping on the low-doped epitaxial layer of N-type of growth
Highly doped epitaxial layer, its process conditions is：Epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and third
Alkane, carrier gas is pure hydrogen, and impurity source is trimethyl aluminium, and completing aluminum doping content is 3x 1019cm-3, thickness is 0.2 μm of p-type
The growth of highly doped epitaxial layer.
B4 Ohm contact electrode, such as Fig. 5 (d)) are deposited.
This step is identical with the step (2d) of embodiment one.
B5) prepare αsource layer, such as 5 (e).
On the Al metal level of above-mentioned N-shaped SiC substrate deposit, using molecule electroplating method, use Pu238Plating a layer thickness is 8 μm
αsource layer.
Step C：Using bonding method, upper PIN junction is bonded together with lower PIN junction, makes αsource layer be clipped in PIN junction
In the middle of the p-type extension ohm contact electrode of N-type epitaxy layer Ohm contact electrode and lower PIN junction, form sandwich tandem PIN junction
Structure alpha irradiation battery, as shown in Figure 2.
Claims (3)
1. a kind of sandwich tandem PIN structural alpha irradiation battery, including：PIN unit and αsource layer (7 ') it is characterised in that：
Described PIN unit, in series using upper and lower two PIN junction；PIN junction is followed successively by from bottom to top thereon, N-type epitaxy layer Europe
Nurse contact electrode (11), the highly doped epitaxial layer of N-type (10), the low-doped epitaxial layer of p-type (9), p-type SiC substrate (8), p-type ohm connect
Touched electrode (6)；Its lower PIN junction is followed successively by from bottom to top, and N-type Ohm contact electrode (5), N-shaped SiC substrate (14), N-type are low-doped
Epitaxial layer (13), the highly doped epitaxial layer of p-type (4 '), p-type extension ohm contact electrode (12)；
Described αsource layer (7 '), is clipped in the N-type epitaxy layer Ohm contact electrode (11) of PIN junction and lower PIN junction p-type extension
Between ohm contact electrode (12), to realize high-energyα-particle is made full use of；
Described p-type SiC substrate (8), N-shaped SiC substrate (14) are 8x 10 all using doping content17cm-34H-SiC substrate, p-type
Low-doped epitaxial layer (9), the highly doped epitaxial layer of N-type (10), the highly doped epitaxial layer of p-type (4 '), the low-doped epitaxial layer of N-type (13) are all
For the 4H-SiC material of extension, to improve life-span and the open-circuit voltage of battery.
2. battery according to claim 1 is it is characterised in that αsource layer (7 ') is 241 using relative atomic mass
Americium element or the plutonium element that relative atomic mass is 238, i.e. Am241Or Pu238.
3. it is characterised in that the thickness h of αsource layer (7 ') meets h≤m, wherein m is α to battery according to claim 1
Average incident depth in αsource material for the high-energyα-particle that radioactive source is discharged, is Am for αsource241, it takes
It is worth and be：M=7.5 μm, be Pu for αsource238, its value is：M=10 μm.
4. a kind of preparation method of sandwich tandem PIN structural alpha irradiation battery, comprises the following steps：
The first step, PIN junction in making：
1.1) p-type SiC substrate is carried out, to remove surface contaminant；
1.2) chemical vapor deposition CVD one layer of doping content of p-type SiC substrate surface epitaxial growth after cleaning is utilized to be 1x
1015～3x 1015cm-3, thickness is 15～28 μm of the low-doped epitaxial layer of p-type；
1.3) chemical vapor deposition CVD is utilized to be 1x in p-type one layer of doping content of low-doped epi-layer surface epitaxial growth
1019～3x 1019cm-3, thickness is 0.1～0.2 μm of the highly doped epitaxial layer of N-type；
1.4) deposited respectively at the back side of the highly doped epi-layer surface of N-type and the non-extension of p-type SiC substrate using electron-beam vapor deposition method
Thickness is the Ni metal level of 300nm, as N-type epitaxy layer Ohm contact electrode and p-type Ohm contact electrode；
Second step, makes lower PIN junction：
2.1) N-shaped SiC substrate is carried out, to remove surface contaminant；
2.2) chemical vapor deposition CVD one layer of doping content of N-shaped SiC substrate surface epitaxial growth after cleaning is utilized to be 1x
1015～3x 1015cm-3, thickness is 15～28 μm of the low-doped epitaxial layer of N-type；
2.3) chemical vapor deposition CVD is utilized to be 1x in N-type one layer of doping content of low-doped epi-layer surface epitaxial growth
1019～3x 1019cm-3, thickness is 0.1～0.2 μm of the highly doped epitaxial layer of p-type；
2.4) electron-beam vapor deposition method is utilized to be the Al metal level of 300nm in p-type highly doped epi-layer surface deposition thickness, as P
Type extension ohm contact electrode；The Ni metal level being 300nm in the back side deposition thickness of the non-extension of N-shaped SiC substrate, as N
Type Ohm contact electrode；
2.5) prepare αsource layer：Plating a layer thickness on the Al metal level that above-mentioned N-shaped SiC substrate deposits using molecular plating is 4
～8 μm of αsource layer；
Upper PIN junction is bonded together with lower PIN junction by the 3rd step using bonding method, makes αsource layer be clipped in the N-type of PIN junction
In the middle of the p-type extension ohm contact electrode of extension ohm contact electrode and lower PIN junction, form sandwich tandem PIN structural α
Irradiation battery.
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| CN101599309A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | SiC Schottky junction type Alpha radioisotope battery and preparation method thereof |
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