CN104035640A - 一种内嵌式触摸屏及显示装置 - Google Patents

一种内嵌式触摸屏及显示装置 Download PDF

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Publication number
CN104035640A
CN104035640A CN201410241132.3A CN201410241132A CN104035640A CN 104035640 A CN104035640 A CN 104035640A CN 201410241132 A CN201410241132 A CN 201410241132A CN 104035640 A CN104035640 A CN 104035640A
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China
Prior art keywords
touch
screen
electrode layer
capacitance
self
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CN201410241132.3A
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English (en)
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CN104035640B (zh
Inventor
王磊
董学
薛海林
王海生
刘英明
杨盛际
刘红娟
丁小梁
赵卫杰
王春雷
李月
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Application filed by BOE Technology Group Co Ltd, Beijing BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201410241132.3A priority Critical patent/CN104035640B/zh
Publication of CN104035640A publication Critical patent/CN104035640A/zh
Priority to EP14861116.3A priority patent/EP3153951B1/en
Priority to US14/443,286 priority patent/US9678594B2/en
Priority to PCT/CN2014/087007 priority patent/WO2015180316A1/zh
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Abstract

本发明公开了一种内嵌式触摸屏及显示装置，利用自电容的原理复用公共电极层作为自电容电极，将公共电极层图形进行变更，沿着公共电极层中条状缝隙以及与条状缝隙交叉的方向，将公共电极层分割成多个相互独立的自电容电极；触控侦测芯片在触控时间段通过检测各自电容电极的电容值变化可以判断出触控位置。由于本发明实施例提供的触摸屏是将公共电极层的结构进行变更分割成自电容电极，因此，在现有的阵列基板制备工艺的基础上，不需要增加额外的工艺，节省了生产成本，提高了生产效率。并且，在分割公共电极层时，是按照公共电极层中原有的条状缝隙将公共电极层进行分割，可以避免因切割公共电极层而造成漏光问题，以及影响正常的显示效果。

Description

一种内嵌式触摸屏及显示装置
技术领域
本发明涉及触控技术领域，尤其涉及一种内嵌式触摸屏及显示装置。
背景技术
随着显示技术的飞速发展，触摸屏(Touch Screen Panel)已经逐渐遍及人们的生活中。目前，触摸屏按照组成结构可以分为：外挂式触摸屏(Add on ModeTouch Panel)、覆盖表面式触摸屏(On Cell Touch Panel)、以及内嵌式触摸屏(InCell Touch Panel)。其中，外挂式触摸屏是将触摸屏与液晶显示屏(Liquid CrystalDisplay，LCD)分开生产，然后贴合到一起成为具有触摸功能的液晶显示屏，外挂式触摸屏存在制作成本较高、光透过率较低、模组较厚等缺点。而内嵌式触摸屏将触摸屏的触控电极内嵌在液晶显示屏内部，可以减薄模组整体的厚度，又可以大大降低触摸屏的制作成本，受到各大面板厂家青睐。
目前，现有的内嵌(In cell)式触摸屏是利用互电容或自电容的原理实现检测手指触摸位置。其中，利用自电容的原理可以在触摸屏中设置多个同层设置且相互绝缘的自电容电极，当人体未触碰屏幕时，各自电容电极所承受的电容为一固定值，当人体触碰屏幕时，对应的自电容电极所承受的电容为固定值叠加人体电容，触控侦测芯片在触控时间段通过检测各自电容电极的电容值变化可以判断出触控位置。由于人体电容可以作用于全部自电容，相对于人体电容仅能作用于互电容中的投射电容，由人体碰触屏幕所引起的触控变化量会大于利用互电容原理制作出的触摸屏，因此相对于互电容的触摸屏能有效提高触控的信噪比，从而提高触控感应的准确性。
在上述电容式内嵌触摸屏的结构设计中，需要在现有的显示面板内部增加加新的膜层，导致在制作面板时需要增加新的工艺，使生产成本增加，不利于提高生产效率。
发明内容
有鉴于此，本发明实施例提供了一种内嵌式触摸屏及显示装置，用以降低内嵌式触摸屏的生产成本、提高生产效率。
因此，本发明实施例提供的一种内嵌式触摸屏，包括相对而置的上基板和下基板，还包括：设置于所述下基板面向所述上基板的一侧的具有多个条状缝隙的公共电极层，以及触控侦测芯片；其中，
所述公共电极层沿着所述条状缝隙以及与所述条状缝隙交叉的方向分割成多个相互独立的自电容电极；
所述触控侦测芯片用于在显示时间段对各自电容电极加载公共电极信号，在触控时间段通过检测各所述自电容电极的电容值变化以判断触控位置。
本发明实施例提供的上述内嵌式触摸屏，利用自电容的原理复用公共电极层作为自电容电极，将公共电极层图形进行变更，沿着公共电极层中条状缝隙以及与条状缝隙交叉的方向，将公共电极层分割成多个相互独立的自电容电极；触控侦测芯片在触控时间段通过检测各自电容电极的电容值变化可以判断出触控位置。由于本发明实施例提供的触摸屏是将公共电极层的结构进行变更分割成自电容电极，因此，在现有的阵列基板制备工艺的基础上，不需要增加额外的工艺，节省了生产成本，提高了生产效率。并且，在分割公共电极层时，是按照公共电极层中原有的条状缝隙将公共电极层进行分割，可以避免因切割公共电极层而造成漏光问题，以及影响正常的显示效果。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，还包括：设置于所述上基板面向所述下基板的一侧，或设置于所述下基板面向所述上基板的一侧的黑矩阵层；
在所述公共电极层中，与所述条状缝隙交叉的方向的分割间隙在所述下基板的正投影位于所述黑矩阵层的图形所在区域内。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，还包括：将所述自电容电极连接至所述触控侦测芯片的多条导线。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，所述导线与所述自电容电极异层设置。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，各所述导线的图形在所述下基板的正投影均位于所述黑矩阵层的图形所在区域内。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，还包括：设置于所述下基板与所述公共电极层之间的像素电极；
所述导线所在层设置在所述像素电极与所述公共电极层之间，或与所述像素电极同层设置。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，还包括：设置于所述下基板面向所述上基板的一侧的相互交叉而置的栅极信号线和数据信号线；相邻的两条栅极信号线和数据信号线围成一像素；
所述导线的延伸方向与所述栅极信号线相同，或与所述数据信号线相同。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，以每相邻的两行像素为一个像素组，在该两行像素之间设置有两条栅极信号线分别为该两行像素提供栅极扫描信号；
所述导线设置在相邻的像素组之间的间隙处，且与所述栅极信号线同层设置。
在一种可能的实现方式中，在本发明实施例提供的上述内嵌式触摸屏中，相邻行的像素之间设置有两条栅极信号线；且每相邻的两列像素为一个像素组，共用一条位于该两列像素之间的数据信号线；
所述导线设置在相邻的像素组之间的间隙处，且与所述数据信号线同层设置。
本发明实施例提供的一种显示装置，包括本发明实施例提供的上述内嵌式触摸屏。
附图说明
图1为本发明实施例提供的内嵌式触摸屏的结构示意图；
图2为本发明实施例提供的内嵌式触摸屏的俯视示意图之一；
图3a和图3b分别为本发明实施例提供的内嵌式触摸屏的驱动时序示意图；
图4和图5分别为本发明实施例提供的内嵌式触摸屏的俯视示意图之二；
图6和图7分别为本发明实施例提供的内嵌式触摸屏的俯视示意图之三；
图8a和图8b分别为本发明实施例提供的内嵌式触摸屏中相邻的自电容电极相对的侧边设置为折线的结构示意图。
具体实施方式
目前，能够实现宽视角的液晶显示技术主要有平面内开关(IPS，In-PlaneSwitch)技术和高级超维场开关(ADS，Advanced Super Dimension Switch)技术；其中，ADS技术通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电极层间产生的电场形成多维电场，使液晶盒内狭缝电极间、电极正上方所有取向液晶分子都能够产生旋转，从而提高了液晶工作效率并增大了透光效率。高级超维场转换技术可以提高TFT-LCD产品的画面品质，具有高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无挤压水波纹(pushMura)等优点。
一般地，传统ADS型液晶面板的下基板上，公共电极层作为板状电极位于下层(更靠近衬底基板)，像素电极层作为狭缝电极位于上层(更靠近液晶层)，在像素电极层和公共电极层之间设有绝缘层。而HADS型液晶面板的下基板上，像素电极层作为板状电极位于下层(更靠近衬底基板)，公共电极层作为狭缝电极位于上层(更靠近液晶层)，在像素电极层和公共电极层之间设有绝缘层。
本发明实施例基于ADS技术的重要改进方式H-ADS(高开口率-高级超维场开关)，提出了新的电容式内嵌触摸屏结构。
下面结合附图，对本发明实施例提供的内嵌式触摸屏及显示装置的具体实施方式进行详细地说明。
附图中各膜层的厚度和形状不反映真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种内嵌式触摸屏，如图1所示，包括相对而置的上基板01和下基板02，还包括：设置于下基板02面向上基板01的一侧的具有条状缝隙的公共电极层03，以及触控侦测芯片04；其中，
如图2所示，公共电极层03沿着条状缝隙a以及与条状缝隙a交叉的方向分割成多个相互独立的自电容电极05；
触控侦测芯片04用于在显示时间段对各自电容电极05加载公共电极信号，在触控时间段通过检测各自电容电极05的电容值变化以判断触控位置。
本发明实施例提供的上述内嵌式触摸屏，利用自电容的原理复用公共电极层03作为自电容电极05，将公共电极层03图形进行变更，沿着公共电极层03中条状缝隙以及与条状缝隙交叉的方向，将公共电极层03分割成多个相互独立的自电容电极05；触控侦测芯片04在触控时间段通过检测各自电容电极05的电容值变化可以判断出触控位置。由于本发明实施例提供的触摸屏是将公共电极层03的结构进行变更分割成自电容电极05，因此，在现有的阵列基板制备工艺的基础上，不需要增加额外的工艺，节省了生产成本，提高了生产效率。并且，在分割公共电极层03时，是按照公共电极层03中原有的条状缝隙将公共电极层03进行分割，可以避免因切割公共电极层03而造成漏光问题，以及影响正常的显示效果。
具体地，由于本发明实施例提供的上述触摸屏采用公共电极层03复用作为自电容电极05，为了减少显示和触控信号之间的相互干扰，在具体实施时，需要采用触控和显示阶段分时驱动的方式，并且，在具体实施时还可以将显示驱动芯片和触控侦测芯片整合为一个芯片，进一步降低生产成本。
具体地，例如：如图3a和图3b所示的驱动时序图中，将触摸屏显示每一帧(V-sync)的时间分成显示时间段(Display)和触控时间段(Touch)，例如如图3a和图3b所示的驱动时序图中触摸屏的显示一帧的时间为16.7ms，选取其中5ms作为触控时间段，其他的11.7ms作为显示时间段，当然也可以根据IC芯片的处理能力适当的调整两者的时长，在此不做具体限定。在显示时间段(Display)，对触摸屏中的每条栅极信号线Gate1，Gate2……Gate n依次施加栅扫描信号，对数据信号线Data施加灰阶信号，与各自电容电极Cx1……Cx n连接的触控侦测芯片向各自电容电极Cx1……Cx n分别施加公共电极信号，以实现液晶显示功能。在触控时间段(Touch)，如图3a所示，与各自电容电极Cx1……Cx n连接的触控侦测芯片向各自电容电极Cx1……Cx n同时施加驱动信号，同时接收各自电容电极Cx1……Cx n的反馈信号；也可以如图3b所示，与各自电容电极Cx1……Cx n连接的触控侦测芯片向各自电容电极Cx1……Cxn依次施加驱动信号，分别接收各自电容电极Cx1……Cx n的反馈信号，在此不做限定，通过对反馈信号的分析判断是否发生触控，以实现触控功能。
一般地，触摸屏的密度通常在毫米级，因此，在具体实施时，可以根据所需的触控密度选择各自电容电极05的密度和所占面积以保证所需的触控密度，通常各自电容电极05设计为5mm*5mm左右的方形电极。而显示屏的密度通常在微米级，因此，一般一个自电容电极05会对应显示屏中的多个像素。并且，本发明实施例提供的上述内嵌式触摸屏是将现有的整层设置在下基板02上的公共电极层03，沿着原有的条状缝隙以及与条状缝隙交叉的方向分割成多个自电容电极05；由于条状缝隙处原本没有公共电极层03的图形，因此，在条状缝隙处设置分割间隙不会影响正常的显示；而在设置与条状缝隙交叉的方向的分割间隙时，为了不影响正常的显示功能，该与条状缝隙交叉的方向的分割间隙应避开显示的开口区域，设置在黑矩阵层的图形区域。
具体地，如图1所示，本发明实施例提供的上述触摸屏中，还可以包括：设置于上基板01面向下基板02的一侧，或设置于下基板02面向上基板01的一侧的黑矩阵层07；
在公共电极层03中，与条状缝隙a交叉的方向的分割间隙b在下基板02的正投影均位于黑矩阵层07的图形所在区域内。
在具体采用自电容原理设计触摸屏时，如图2所示，一般每一个自电容电极05需要通过单独的导线06与触控侦测芯片04连接，即一般在触摸屏中还包括用于将自电容电极05连接至触控侦测芯片04的多条导线06。
在具体实施时，可以将导线06与自电容电极05的图形设置在同一膜层，即可以在公共电极层03内设置自电容电极05和导线06的图形；也可以将导线06与自电容电极05的图形异层设置，即采用单独的构图工艺制作导线06的图形。其中，将导线06和自电容电极05同层设置虽然可以避免增加新的构图工艺，但是，将自电容电极05和导线06同层设置会形成触控盲区，在触控盲区内连接多个自电容电极05的导线06均经过该触控盲区，因此，在这个触控盲区内的信号相对比较紊乱，也就是在该区域内的触控性能无法保证。基于上述考虑，在具体实施时，一般将导线06和自电容电极05异层设置。
在具体实施时，在下基板02设置导线06时，如图2所示，为了不影响显示区域的开口率，一般将各导线06的图形设置为在下基板02的正投影位于黑矩阵层07的图形所在区域内。
在具体实施时，本发明实施例提供的上述触摸屏中，如图1所示，在下基板02与公共电极层03之间设有像素电极08。具体地，与公共电极层03中的自电容电极05连接的导线06所在层可以设置于像素电极08与公共电极层03之间，或者将导线与像素电极08同层设置，即利用像素电极08与公共电极层03之间的绝缘层隔离相互没有连接关系的导线06和自电容电极05，利用绝缘层中的过孔使对应的导线06和自电容电极05相连。具体地，在制作完像素电极08的图形之后制作导线06的图形，或者同时制作像素电极08和导线06的图形，然后依次制作绝缘层和公共电极层03的图形。其中，各导线06的图形可以设置成横向条状结构，也可以设置成纵向条状结构，还可以设置成横纵交错的网状结构，如图2所示，可以根据实际参数进行设计，在此不做限定。
进一步地，在本发明实施例提供的上述触摸屏中，如图4和图5所示，一般还包括：设置于下基板02面向上基板01的一侧的相互交叉而置的栅极信号线09和数据信号线10，相邻的两条栅极信号线09和数据信号线10围成一像素。
为了便于通过导线06将自电容电极05与触控侦测芯片04连接，一般导线06的延伸方向设置为与栅极信号线09相同，或与数据信号线10相同。即一般各导线06的延伸方向均一致。
进一步地，在本发明实施例提供的触摸屏中，为了尽可能的不增加新的膜层，保证生产效率和降低生产成本，在具体实施时，可以将与自电容电极05连接的导线06与栅极信号线09同层设置，或与数据信号线10同层设置。
具体地，一种可能的实施方式为：如图4所示，在下基板02上，以每相邻的两行像素为一个像素组，在该两行像素之间设置有两条栅极信号线09分别为该两行像素提供栅极扫描信号。通过变更相邻两行像素之间的栅极信号线09和TFT开关的位置，可以节省出相邻像素组之间栅极信号线09的位置。这样，如图4所示，就可以将导线06设置在相邻的像素组之间的间隙处，且与栅极信号线09同层设置。导线06与对应的自电容电极05通过过孔电连接。
具体地，另一种可能的实施方式为：如图5所示，采用双栅结构，在下基板02上，在相邻行的像素之间均设置两条栅极信号线09；且每相邻的两列像素设为一个像素组，共用一条位于该两列像素之间的数据信号线10。通过增加一倍栅极信号线09的数量，可以节省出相邻像素组之间数据信号线10的位置。这样，如图5所示，就可以将导线06设置在相邻的像素组之间的间隙处，且与数据信号线10同层设置。导线06与对应的自电容电极05通过过孔电连接。
具体地，由于像素电极层一般由ITO材料制成，而ITO材料的电阻较高，为了最大限度的降低其电阻，提高各自电容电极05传递电信号的信噪比，可以将自电容电极05与对应的导线06通过多个过孔电性相连，如图6所示。相当于将ITO电极和多个由导线组成的金属电阻并联，这样能最大限度的减少电极的电阻，从而提高电极传递信号时的信噪比。
进一步地，为了更加降低自电容电极05的电阻，在设计各条导线06时，如图7所示，在满足各导线06与对应的自电容电极05电性连接后，还可以将原来贯穿整个面板的整条的导线断开，形成导线06和与导线06同层设置且相互绝缘的多条金属线11；各金属线11与各导线06位于同一直线，且与交叠的一自电容电极05并联，即通过过孔电性相连。上述这种设计能充分利用相邻组像素之间的间隙，在保证触摸屏的开口率的同时，利用了导线的冗余部分，设置电阻值较低的金属线，并将电阻值较低的金属线与电阻值较高的各自电容电极并联，能最大程度的降低各自电容电极的电阻。
进一步地，在本发明实施例提供的内嵌式触摸屏中，由于人体电容通过直接耦合的方式作用于各自电容电极05的自电容，因此，人体触碰屏幕时，仅在触摸位置下方的自电容电极05的电容值有较大的变化量，与触摸位置下方的自电容电极05相邻的自电容电极05的电容值变化量非常小，这样，在触摸屏上滑动时，不能确定自电容电极05所在区域内的触控坐标，为解决此问题，在本发明实施例提供的上述内嵌式触摸屏中，可以将相邻的两个自电容电极05相对的侧边均设置为折线，以便增大位于触摸位置下方的自电容电极05相邻的自电容电极05的电容值变化量。
在具体实施时，可以采用如下两种方式之一或组合的方式设置各自电容电极05的整体形状：
1、可以将相邻的两个自电容电极05相对的为折线的侧边均设置为阶梯状结构，两阶梯状结构形状一致且相互匹配，如图8a所示，图8a中示出了2*2个自电容电极05；
2、可以将相邻的两个自电容电极05相对的为折线的侧边均设置为凹凸状结构，两凹凸状结构形状一致且相互匹配，如图8b所示，图8b中示出了2*2个自电容电极05。
在具体实施时，本发明实施例提供的上述触摸屏中，可以采用现有的任意种构图流程制作下基板02上的各膜层，例如可以采用8次构图工艺：栅极和栅线构图→有源层构图→第一绝缘层构图→数据线和源漏极构图→树脂层构图→像素电极构图→第二绝缘层构图→公共电极层构图；当然也可以根据实际设计，采用7次构图工艺、6次构图工艺或5次构图工艺，在此不做限定。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述内嵌式触摸屏，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述内嵌式触摸屏的实施例，重复之处不再赘述。
本发明实施例提供的上述内嵌式触摸屏及显示装置，利用自电容的原理复用公共电极层作为自电容电极，将公共电极层图形进行变更，沿着公共电极层中条状缝隙以及与条状缝隙交叉的方向，将公共电极层分割成多个相互独立的自电容电极；触控侦测芯片在触控时间段通过检测各自电容电极的电容值变化可以判断出触控位置。由于本发明实施例提供的触摸屏是将公共电极层的结构进行变更分割成自电容电极，因此，在现有的阵列基板制备工艺的基础上，不需要增加额外的工艺，节省了生产成本，提高了生产效率。并且，在分割公共电极层时，是按照公共电极层中原有的条状缝隙将公共电极层进行分割，可以避免因切割公共电极层而造成漏光问题，以及影响正常的显示效果。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种内嵌式触摸屏，包括相对而置的上基板和下基板，其特征在于，还包括：设置于所述下基板面向所述上基板的一侧的具有多个条状缝隙的公共电极层，以及触控侦测芯片；其中，
所述公共电极层沿着所述条状缝隙以及与所述条状缝隙交叉的方向分割成多个相互独立的自电容电极；
所述触控侦测芯片用于在显示时间段对各自电容电极加载公共电极信号，在触控时间段通过检测各所述自电容电极的电容值变化以判断触控位置。
2.如权利要求1所述的内嵌式触摸屏，其特征在于，还包括：设置于所述上基板面向所述下基板的一侧，或设置于所述下基板面向所述上基板的一侧的黑矩阵层；
在所述公共电极层中，与所述条状缝隙交叉的方向的分割间隙在所述下基板的正投影均位于所述黑矩阵层的图形所在区域内。
3.如权利要求2所述的内嵌式触摸屏，其特征在于，还包括：将所述自电容电极连接至所述触控侦测芯片的多条导线。
4.如权利要求3所述的内嵌式触摸屏，其特征在于，所述导线与所述自电容电极异层设置。
5.如权利要求3或4所述的内嵌式触摸屏，其特征在于，各所述导线的图形在所述下基板的正投影位于所述黑矩阵层的图形所在区域内。
6.如权利要求4所述的内嵌式触摸屏，其特征在于，还包括：设置于所述下基板与所述公共电极层之间的像素电极；
所述导线所在层设置在所述像素电极与所述公共电极层之间，或与所述像素电极同层设置。
7.如权利要求4所述的内嵌式触摸屏，其特征在于，还包括：设置于所述下基板面向所述上基板的一侧的相互交叉而置的栅极信号线和数据信号线；相邻的两条栅极信号线和数据信号线围成一像素；
所述导线的延伸方向与所述栅极信号线相同，或与所述数据信号线相同。
8.如权利要求7所述的内嵌式触摸屏，其特征在于，以每相邻的两行像素为一个像素组，在该两行像素之间设置有两条栅极信号线分别为该两行像素提供栅极扫描信号；
所述导线设置在相邻的像素组之间的间隙处，且与所述栅极信号线同层设置。
9.如权利要求7所述的内嵌式触摸屏，其特征在于，相邻行的像素之间设置有两条栅极信号线；且每相邻的两列像素为一个像素组，共用一条位于该两列像素之间的数据信号线；
所述导线设置在相邻的像素组之间的间隙处，且与所述数据信号线同层设置。
10.一种显示装置，其特征在于，包括如权利要求1-9任一项所述的内嵌式触摸屏。
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