CN104034568B - 用于检测超薄硅晶圆亚表面损伤深度的试样制备方法 - Google Patents
用于检测超薄硅晶圆亚表面损伤深度的试样制备方法 Download PDFInfo
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CN105067168B (zh) * | 2015-07-16 | 2017-10-10 | 北京工业大学 | 一种磨削晶圆亚表面残余应力测试方法 |
CN106683967A (zh) * | 2015-11-10 | 2017-05-17 | 有研半导体材料有限公司 | 一种机加工后硅环卡槽或台阶的加工方法 |
CN106767492B (zh) * | 2016-11-23 | 2019-08-13 | 西北有色金属研究院 | 一种金属表面激光条形码深度的测量方法 |
CN107543837B (zh) * | 2017-08-25 | 2020-02-21 | 郑州磨料磨具磨削研究所有限公司 | 一种砂轮精磨后硅片损伤层的检测方法 |
CN107664641B (zh) * | 2017-10-10 | 2020-10-02 | 湖南科技大学 | 一种基于光照强度的工程陶瓷磨削损伤检测方法 |
CN112355882B (zh) * | 2020-11-09 | 2022-04-22 | 西安奕斯伟硅片技术有限公司 | 一种晶圆表面损伤层深度测量方法及系统 |
CN114184622B (zh) * | 2021-11-24 | 2024-03-08 | 陕西有色天宏瑞科硅材料有限责任公司 | 一种检测区熔多晶硅表面损伤深度的方法 |
CN115388786A (zh) * | 2022-08-08 | 2022-11-25 | 安徽承禹半导体材料科技有限公司 | 一种碲锌镉晶片损伤层厚度的检测方法 |
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CN102426119A (zh) * | 2011-08-25 | 2012-04-25 | 上海华碧检测技术有限公司 | 一种小尺寸晶圆样品结构截面观察的样品制备方法 |
CN103681298B (zh) * | 2013-12-05 | 2017-07-18 | 天津中环领先材料技术有限公司 | 一种igbt用高产能单晶硅晶圆片加工方法 |
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