CN104021900A - Plane thick-film large-power non-inductive resistor - Google Patents
Plane thick-film large-power non-inductive resistor Download PDFInfo
- Publication number
- CN104021900A CN104021900A CN201410283432.8A CN201410283432A CN104021900A CN 104021900 A CN104021900 A CN 104021900A CN 201410283432 A CN201410283432 A CN 201410283432A CN 104021900 A CN104021900 A CN 104021900A
- Authority
- CN
- China
- Prior art keywords
- layer
- power non
- inductive resistor
- slurry layer
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Details Of Resistors (AREA)
Abstract
The invention provides a plane thick-film large-power non-inductive resistor. The plane thick-film large-power non-inductive resistor comprises an outer shell, wherein an inner shell is arranged in the outer shell. The plane thick-film large-power non-inductive resistor is characterized by also comprising a ceramic plate which is of a single-layer structure and is provided with a conductive silver paste layer and a resistance paste layer, pins are welded on the conductive silver paste layer, and the ceramic plate as well as the conductive silver paste layer and the resistance paste layer on the ceramic plate is arranged in the inner shell. Compared with an existing three-layer structure (in a sandwich shape), the single-layer ceramic plate structure has the advantages that the process is simpler, the paste layers are directly printed on high heat conductivity ceramic, the structure is simple, the heat conduction efficiency is higher, and the heat radiating effect of a soleplate can be fundamentally guaranteed.
Description
Technical field
The present invention relates to power electric component field, relate in particular to a kind of plane thick film high-power non-inductive resistor.
Background technology
At present, thick film the high-power resistance more than 600W selling on market, it has very high requirement to the media area on porcelain substrate and radiating effect, be that media area on rated power and the porcelain substrate of resistor is directly proportional, object in order to install and to dispel the heat simultaneously, porcelain substrate also will add tin welding with metal base plate.Because bi-material has different thermal coefficient of expansions, welding process can cause the distortion that metal base plate is serious, and base areas is larger, is out of shape more serious.And the radiating efficiency limitation of the result existence of bonding bottom board type itself, therefore its be generally only applicable to≤300W power resistor field.
Be directed to the problems referred to above, on market, there is a solution, copper sheet is weldingly fixed between the first potsherd and the second potsherd, utilize vacuum welding to form sandwich shape, to porcelain substrate and metal when the welding because effective compensation has been carried out in the distortion that different thermal coefficient of expansions produces, ensure the radiating effect of base plate, gone for thick film Power Resistor more than 600W.But this sandwich structure is too complicated, and what pottery used is aluminium oxide ceramics, and heat conductivility is poor.
Summary of the invention
The object of this invention is to provide a kind of plane thick film high-power non-inductive resistor, it does not adopt the mode of welding, single-layer ceramic chip architecture, the thermal resistance of reduction product, fundamentally ensure the radiating effect of base plate, gone for plane thick film high-power non-inductive resistor more than 600W.
To achieve these goals, the invention provides a kind of plane thick film high-power non-inductive resistor, comprise shell, in shell, be provided with inner casing, it is characterized in that, also comprise ceramic wafer, described ceramic wafer is single layer structure, which is provided with conductive silver slurry layer and resistance slurry layer, on conductive silver slurry layer, be welded with pin, ceramic wafer and on conductive silver slurry layer and resistance slurry layer be all located in inner casing.
Preferably, described ceramic wafer is al nitride ceramic board.
Preferably, be also provided with deformed spring in described shell, deformed spring is located between inner casing and shell.
Preferably, described conductive silver slurry layer is total two-layer up and down, and described resistance slurry layer is between two-layer conductive silver slurry layer.
Preferably, described resistance slurry layer forms parallel resistance structure.
Preferably, described shell is provided with wiring copper post, and pin connects wiring copper post.
Preferably, in described inner casing, embedding has silica gel.
Preferably, described resistance slurry layer is that silver-colored palladium slurry or ruthenium are slurry.
Compared with prior art, the invention has the beneficial effects as follows:
1, the present invention adopts single-layer ceramic chip architecture, and compared with existing three-decker (sandwich shape), technique is simpler, pulp layer is directly printed on high thermal conductivity pottery, simple in structure, heat transfer efficiency is higher, has fundamentally ensured the radiating effect of base plate.
2, resistor of the present invention adopts deformed spring to fix, and makes ceramic wafer and installed surface tightr, reduces thermal resistance.
Brief description of the drawings
Fig. 1 is plane thick film high-power non-inductive resistor structure explosive view;
In figure:
1 ceramic wafer 2 conductive silver slurry layer 3 resistance slurry layers
4 pin 5 deformed spring 6 inner casings
7 wiring copper post 8 shells
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment
As shown in Figure 1, for plane thick film high-power non-inductive resistor structure explosive view, described plane thick film high-power non-inductive resistor is made up of one deck ceramic wafer 1, conductive silver slurry layer 2, resistance slurry layer 3, pin 4, deformed spring 5, inner casing 6, wiring copper post 7 and shell 8.In shell 8, be provided with inner casing 6, described ceramic wafer 1 is the al nitride ceramic board that thermal conductivity is higher.Described ceramic wafer 1 is single layer structure, which is provided with conductive silver slurry layer 2 and resistance slurry layer 3, and described conductive silver slurry layer 2 is total two-layer up and down, and described resistance slurry layer 3 is between two-layer conductive silver slurry layer 2, and described resistance slurry layer 3 is silver-colored palladium slurry.Described resistance slurry layer 3 forms parallel resistance structure.On conductive silver slurry layer 2, be welded with pin 4, ceramic wafer 1 and on conductive silver slurry layer 2 and resistance slurry layer 3 be all located in inner casing 6.Described shell 8 is provided with wiring copper post 7, and pin 4 connects wiring copper post 7.The described interior embedding of inner casing 6 has silica gel.In described shell 8, be also provided with deformed spring 5, deformed spring 5 is located between inner casing 6 and shell 8.
When installation, conductive silver slurry layer 2 and resistance slurry layer 3 are printed on nitrogenize aluminium sheet 1 and sintering (850 DEG C) solidifies, pin 4 is welded on conductive silver slurry layer 2.Then entirety is put into inner casing 6 embedding silica gel reinforced insulation performance again.Wiring copper post 7 is loaded onto deformed spring 5 together with being injection-moulded in shell 8, is buckled on shell 6.
Compared to the situation of prior art, plane thick film high-power non-inductive resistor provided by the invention, adopt single-layer ceramic plate structure, ceramic wafer adopts high-performance aluminium nitride ceramics to make, good insulation preformance, and good heat conductivity thermal conductivity >=200W/m.k, thermal conductivity and aluminium are suitable, be aluminium oxide ceramics and prior art adopts, aluminium oxide ceramics thermal conductivity is 25W/m.k, also needs to weld copper sheet and makes sandwich shape and could meet powerful requirement.Single-layer ceramic chip architecture provided by the invention, the thermal conductivity of pottery is prior art 8 times, pulp layer direct sintering is on nitrogenize aluminium sheet, reduce contact heat resistance, reduce production link, greatly improved the radiating effect of product, be applicable to Power Resistor more than 600W.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little amendment and perfect, therefore protection scope of the present invention is worked as with being as the criterion that claims were defined.
Claims (8)
1. a plane thick film high-power non-inductive resistor, comprise shell (8), in shell (8), be provided with inner casing (6), it is characterized in that, also comprise ceramic wafer (1), described ceramic wafer (1) is single layer structure, which is provided with conductive silver slurry layer (2) and resistance slurry layer (3), on conductive silver slurry layer (2), be welded with pin (4), ceramic wafer (1) and on conductive silver slurry layer (2) and resistance slurry layer (3) be all located in inner casing (6).
2. plane thick film high-power non-inductive resistor as claimed in claim 1, is characterized in that, described ceramic wafer (1) is al nitride ceramic board.
3. plane thick film high-power non-inductive resistor as claimed in claim 1, it is characterized in that, in described shell (8), be also provided with deformed spring (5), deformed spring (5) is located between inner casing (6) and shell (8).
4. plane thick film high-power non-inductive resistor as claimed in claim 1, it is characterized in that, described conductive silver slurry layer (2) is total two-layer up and down, and described resistance slurry layer (3) is positioned between two-layer conductive silver slurry layer (2).
5. plane thick film high-power non-inductive resistor as claimed in claim 1, is characterized in that, described resistance slurry layer (3) forms parallel resistance structure.
6. plane thick film high-power non-inductive resistor as claimed in claim 1, is characterized in that, described shell (8) is provided with wiring copper post (7), and pin (4) connects wiring copper post (7).
7. plane thick film high-power non-inductive resistor as claimed in claim 1, is characterized in that, the described interior embedding of inner casing (6) has silica gel.
8. plane thick film high-power non-inductive resistor as claimed in claim 1, is characterized in that, described resistance slurry layer (3) is that silver-colored palladium slurry or ruthenium are slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410283432.8A CN104021900A (en) | 2014-06-23 | 2014-06-23 | Plane thick-film large-power non-inductive resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410283432.8A CN104021900A (en) | 2014-06-23 | 2014-06-23 | Plane thick-film large-power non-inductive resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104021900A true CN104021900A (en) | 2014-09-03 |
Family
ID=51438613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410283432.8A Pending CN104021900A (en) | 2014-06-23 | 2014-06-23 | Plane thick-film large-power non-inductive resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104021900A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847446A (en) * | 2017-01-18 | 2017-06-13 | 林金杰 | A kind of resistance erector |
| CN107103971A (en) * | 2017-01-18 | 2017-08-29 | 林金杰 | A kind of new-type resistance erector |
| CN107103970A (en) * | 2017-01-18 | 2017-08-29 | 林金杰 | A kind of firm formula resistance erector |
| CN107195405A (en) * | 2017-05-27 | 2017-09-22 | 广东福德电子有限公司 | A kind of thick film plane Power Resistor |
-
2014
- 2014-06-23 CN CN201410283432.8A patent/CN104021900A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847446A (en) * | 2017-01-18 | 2017-06-13 | 林金杰 | A kind of resistance erector |
| CN107103971A (en) * | 2017-01-18 | 2017-08-29 | 林金杰 | A kind of new-type resistance erector |
| CN107103970A (en) * | 2017-01-18 | 2017-08-29 | 林金杰 | A kind of firm formula resistance erector |
| CN106847446B (en) * | 2017-01-18 | 2018-10-19 | 江苏世星电子科技有限公司 | A kind of resistance erector |
| CN107103971B (en) * | 2017-01-18 | 2019-02-01 | 江苏双兴工贸有限公司 | A kind of new-type resistance erector |
| CN107103970B (en) * | 2017-01-18 | 2019-02-01 | 江苏双兴工贸有限公司 | A kind of firm formula resistance erector |
| CN107195405A (en) * | 2017-05-27 | 2017-09-22 | 广东福德电子有限公司 | A kind of thick film plane Power Resistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104021900A (en) | Plane thick-film large-power non-inductive resistor | |
| CN104795372A (en) | Fingerprint sensor chip package structure | |
| CN103987211B (en) | A kind of high-efficiency heat-radiating aluminum plate based on increase aluminium base face and preparation method thereof | |
| CN205004121U (en) | Height endures type paster piezo -resistor | |
| CN203931694U (en) | Plane thick film high-power non-inductive resistor | |
| CN202758689U (en) | Thick-film super-power planar resistor of composite base plate | |
| CN203537660U (en) | Printed circuit board | |
| CN104411028B (en) | The electrode connecting structure of a kind of Electric radiant Heating Film and its preparation method and heating unit | |
| CN108777199A (en) | A kind of high-power antisurge alloy sheet resistance of two-sided resistive layer structure | |
| CN209731686U (en) | A kind of circuit board | |
| CN202979463U (en) | Circuit board with ceramic substrate | |
| CN204596786U (en) | A kind of power model | |
| CN108650778B (en) | PCB heat dissipation method and device | |
| CN207425853U (en) | A kind of electric resistance structure of ESD device series resistance | |
| CN208208459U (en) | A kind of high-power antisurge alloy sheet resistance of two-sided resistive layer structure | |
| CN202907340U (en) | Inlaid circuit board | |
| CN207491319U (en) | A kind of polytetrafluoroethylene (PTFE) microwave-medium composite substrate | |
| CN206024242U (en) | A kind of printed circuit-board assembly of quick heat radiating | |
| CN206302629U (en) | Silver paste cross-line printed wiring board | |
| CN202678399U (en) | LED ceramic base | |
| CN207516429U (en) | A kind of closed-loop Hall current sensor | |
| CN202259637U (en) | 20-watt load plate with impedance of 50 Omega and with thin aluminum nitride ceramic substrate | |
| CN211240280U (en) | High radiating single face metal substrate | |
| CN212211506U (en) | Multilayer printed circuit board capable of quickly radiating heat | |
| CN202374614U (en) | Heat radiation structure of electronic equipment and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140903 |