CN104009076B - 一种AlGaN/GaN异质结场效应晶体管 - Google Patents

一种AlGaN/GaN异质结场效应晶体管 Download PDF

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CN104009076B
CN104009076B CN201410234520.9A CN201410234520A CN104009076B CN 104009076 B CN104009076 B CN 104009076B CN 201410234520 A CN201410234520 A CN 201410234520A CN 104009076 B CN104009076 B CN 104009076B
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段宝兴
袁嵩
杨银堂
郭海君
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Abstract

本发明公开了一种具有钝化层电荷补偿的新AlGaN/GaN高电子迁移率晶体管。这种新的晶体结构是在晶体管栅极和漏极之间的表面钝化层中注入电荷形成电荷补偿层，这些电荷存在于晶体管表面，在不影响AlGaN/GaN异质结极化效应的同时能通过电场调制效应使表面电场重新分布，产生新的电场峰，从而使得栅边缘以及漏端高电场降低，表面电场趋于均匀，击穿电压和器件可靠性相比于传统结构也就有了明显的提高与改善。另外利用电荷补偿层的电荷补偿作用，使沟道载流子浓度重新分布，可以使器件导通电阻减小，输出电流增大。

Description

一种AlGaN/GaN异质结场效应晶体管
技术领域
本发明涉及半导体器件技术领域，特别是涉及一种AlGaN/GaN异质结场效应晶体管。
背景技术
由于Si与GaAs为代表的前两代半导体材料的局限性，第三代宽禁带半导体材料因为其优异的性能得到了飞速发展。GaN材料作为第三代半导体材料的核心之一，相比Si，GaAs和碳化硅(SiC)特殊之处在于其所具有极化效应。利用这种特殊性能人们研制了AlGaN/GaN高电子迁移率晶体管，AlGaN/GaNHEMTs是以AlGaN/GaN异质结材料为基础而制造的GaN基微电子器件。AlGaN/GaN异质结通过自发极化和压电极化效应在异质结界面处形成高密度二维电子气(two dimensional electron gas，2DEG)，这种二维电子气具有很高的迁移率，从而使AlGaN/GaN HEMTs具有很低的导通电阻。与传统的场效应晶体管(FET)器件相比，AlGaN/GaN HEMTs具有高跨导、高饱和电流以及高截止频率等优良特性。而且，实验证明，GaN基HEMTs在1000K的高温下仍然保持着良好的直流特性，从而为高温环境应用的系统提供了可靠高效的电子器件。
然而在AlGaN/GaN高电子迁移率晶体管的栅边缘往往存在着高峰电场，其会给器件带来以下不利影响：1、会引起电子-空穴对离化，当达到雪崩条件时器件泄漏电流超过设定范围，从而使器件在栅电极边缘击穿。2、即使没有达到GaN材料的击穿电场，高电场效应仍然会使栅电极电子场致发射遂穿进表面钝化层，这些隧穿的电子会中和AlGaN极化层的表面正电荷，而这些表面正电荷的浓度直接关系到异质结界面处2DEG的浓度大小，部分表面正电荷被中和会降低用于补偿的高密度2DEG浓度，从而使AlGaN/GaN HEMTs输出电流出现明显的减小，这就是电流崩塌效应。3、使电子-空穴对的离化几率增加，电离后的空穴在纵向电场作用下进入沟道中和2DEG也会使2DEG浓度减小进一步使得输出电流减小；而且电离后的电子进入AlGaN极化层会给器件阈值电压带来不利影响，使得器件可靠性降低。
因此，降低AlGaN/GaN HEMTs器件栅边缘高峰电场是一种优化其性能、提高其可靠性的重要手段。
发明内容
为了解决现有技术中由于在AlGaN/GaN高电子迁移率晶体管的栅边缘存在高峰电场而引起的器件发生击穿、泄漏电流超过预定范围、发生电流崩塌效应，器件阈值电压和输出电流减小，器件可靠性降低等一系列问题，本发明提供一种新型的AlGaN/GaN异质结场效应晶体管。
解决方案如下：
一种AlGaN/GaN异质结场效应晶体管，包括：
半绝缘衬底；
位于所述半绝缘衬底上外延生长的GaN缓冲层；
位于所述GaN缓冲层上异质外延生长的AlGaN层；
分列于所述AlGaN层上的源极、栅极以及漏极；
位于所述AlGaN层上栅极与漏极之间生长的表面钝化层，
其特殊之处在于：
所述表面钝化层内具有调制沟道载流子浓度的电荷补偿层。
基于上述解决方案，本发明还进一步作如下优化限定和改进：
上述电荷补偿层是通过在表面钝化层注入正电荷和负电荷形成的。
正负离子对沟道载流子浓度调制的结果相反，想达到不同的效果，可以灵活选择注入位置、类型与浓度。
上述栅极通过肖特基接触与所述AlGaN层相连。
上述源极和所述漏极均通过欧姆接触与所述AlGaN层相连。
上述半绝缘衬底为能够与所述GaN缓冲层异质外延的半绝缘材料。
上述半绝缘材料为硅、蓝宝石或碳化硅。
上述外延生长的GaN缓冲层具有n型电阻特性或半绝缘特性。
本发明的上述技术方案的有益效果如下：
在晶体管栅极和漏极之间的表面钝化层或者中注入电荷形成电荷补偿层，这些电荷存在于晶体管表面，在不影响AlGaN/GaN异质结极化效应的同时能通过电场调制效应使表面电场重新分布，产生新的电场峰，从而使得栅边缘以及漏端高电场降低，表面电场趋于均匀。
而且电场调制效应会随着电荷补偿层电荷密度的增加而增强，使得新电场峰值提高，栅边缘高峰电场下降量增加；使得器件击穿时泄漏电流不会超过预定范围、避免发生电流崩塌效应。
而且由于表面电场更加均匀，使得器件在达到GaN材料临界击穿电场时所需要施加的漏端电压更大，击穿电压和器件可靠性相比于传统结构也就有了明显的提高与改善。
而且利用电荷补偿效应，可以在沟道感应出更高浓度的载流子，使器件较传统结构的沟道电阻减小，输出电流增加。
附图说明
图1为本发明具有钝化层电荷补偿的新型AlGaN/GaN高电子迁移率晶体管的示意图。
具体实施方式
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面结合附图及具体实施例进行详细描述。
本发明针对现有的AlGaN/GaN高电子迁移率晶体管的栅边缘存在高峰电场问题，提供一种具有钝化层电荷补偿的新型AlGaN/GaN高电子迁移率晶体管。
其结构如图1所示，主要包括：半绝缘衬底0；位于半绝缘衬底上外延生长的缓冲层1；位于缓冲层1表面外延生长的GaN缓冲层2；位于GaN缓冲上异质外延生长的AlGaN层3；位于所述AlGaN层上的栅极4、漏极5以及源极6；位于栅漏之间的钝化层7，其中钝化层中含有电荷补偿层，其中正负电荷个数示意图代表其电荷浓度大小。
电荷补偿层电荷通过电场调制效应使得AlGaN/GaN沟道载流子浓度发生变化，表面电场重新分布，产生新的电场峰。从而使得栅边缘以及漏端高电场降低，表面电场分布趋于均匀。而且电场调制效应会随着电荷补偿层电荷密度的增加而增强，使得新电场峰值提高，栅边缘高峰电场下降量增加；使得器件击穿时泄漏电流不会超过预定范围、避免发生电流崩塌效应；而且由于表面电场更加均匀，使得器件在达到GaN材料临界击穿电场时所需要施加的漏端电压更大，击穿电压和器件可靠性相比于传统结构也就有了明显的提高与改善；而且利用电荷补偿效应，可以在沟道感应出更高浓度的载流子，使器件较传统结构的沟道电阻减小，输出电流增加。
其具体实施方式以CF4，SiH4为例：在完成普通带钝化层AlGaN/GaN高电子迁移率晶体管的钝化工艺后，在靠近栅极一侧的钝化层利用固定流量的CF4(或者其他可提供负离子的材料)在一定的气压和温度下进行离子注入，而在靠近漏极一侧的钝化层利用固定流量的SiH4(或者其它可提供正离子的材料)在一定气压和温度下进行离子注入。离子浓度与离子注入时间成正比，根据所需浓度调整离子注入时间。
这里，注入的正负电荷的浓度没有相关性，只与该电荷注入处所对应的沟道的具体要求有关，在需要减小沟道载流子浓度的地方此处所对应表面就注入负电荷，注入的负电荷浓度越大，减小的幅度越大，同理对于正电荷也是如此，具体沟道载流子浓度的大小，主要是根据所着重需要遏制的不利影响来确定，比如：
若需要一个LDD的浓度分布以提高击穿电压遏制热载流子注入效应，则可以在由栅到漏依次注入高浓度负电荷，在递减至无电荷注入，在递增至高浓度正离子。
若需要克制虚栅，则可以在栅边缘注入一定浓度的正电荷。
若需要大输出电流，可以由栅到均漏注入一定浓度正电荷，等等。
为获得“具有调制沟道载流子浓度的电荷补偿层”，并不限于上述实施例采用的钝化层电荷注入工艺和离子源，也可以采用其他方式实现，最终应能达到相同的技术效果。
正负电荷的离子源选取方式有很多，CF4、SiH4、SiF4、CH3F，H2等能够提供F离子H离子或者其他正负离子的源材料都可以应用于此方案。
以上所述的是本发明的优选实施方式，对于本技术领域的普通人员来说，基于本发明的原理，还可以进行若干改进和完善，这些改进和完善的产物也应视为本发明的保护范围。

Claims (6)

1.一种AlGaN/GaN异质结场效应晶体管，包括：
半绝缘衬底；
位于所述半绝缘衬底上外延生长的GaN缓冲层；
位于所述GaN缓冲层上异质外延生长的AlGaN层；
分列于所述AlGaN层上的源极、栅极以及漏极；
位于所述AlGaN层上栅极与漏极之间生长的表面钝化层，
其特征在于：
所述表面钝化层内具有调制沟道载流子浓度的电荷补偿层；所述电荷补偿层是通过在表面钝化层注入正电荷和负电荷形成的，具体是：由栅到漏依次注入高浓度负电荷，再递减至无电荷注入，再递增至高浓度正离子；或者在栅边缘注入正电荷；或者由栅到漏均注入正电荷。
2.如权利要求1所述的AlGaN/GaN异质结场效应晶体管，其特征在于，所述栅极通过肖特基接触与所述AlGaN层相连。
3.如权利要求1所述的AlGaN/GaN异质结场效应晶体管，其特征在于，所述源极和所述漏极均通过欧姆接触与所述AlGaN层相连。
4.如权利要求1所述的AlGaN/GaN异质结场效应晶体管，其特征在于，所述半绝缘衬底为能够与所述GaN缓冲层异质外延的半绝缘材料。
5.如权利要求4所述的AlGaN/GaN异质结场效应晶体管，其特征在于，所述半绝缘材料为硅或碳化硅；或者，所述半绝缘材料替换为蓝宝石。
6.如权利要求1所述的AlGaN/GaN异质结场效应晶体管，其特征在于，所述外延生长的GaN缓冲层具有n型电阻特性或半绝缘特性。
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