CN103996687A - Local-thinned backside illuminated type image sensor structure and packaging process thereof - Google Patents
Local-thinned backside illuminated type image sensor structure and packaging process thereof Download PDFInfo
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- CN103996687A CN103996687A CN201410259565.1A CN201410259565A CN103996687A CN 103996687 A CN103996687 A CN 103996687A CN 201410259565 A CN201410259565 A CN 201410259565A CN 103996687 A CN103996687 A CN 103996687A
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- chip
- bonding pad
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- image sensor
- local reduction
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Abstract
The invention discloses a local-thinned backside illuminated type image sensor structure which is composed of a chip, an elevating layer, a substrate, a chip bonding pad, a substrate bonding pad, a lead and a light window, wherein a local-thinned groove is formed in the upper end face of the chip; the upper end face of the chip is connected with the light window; the light window covers the local-thinned groove; the lower end face of the chip is connected with the upper end face of the elevating layer; the chip bonding pad is arranged on the lower end face of the chip; the chip bonding pad is located on the outer side of the elevating layer; the lower end face of the elevating layer is connected with the upper end face of the substrate; the substrate bonding pad is arranged on the upper end face of the substrate; the substrate bonding pad is located on the outer side of the chip bonding pad, and the chip bonding pad and the substrate bonding pad are connected through the lead. The invention further discloses a packaging process of the local-thinned backside illuminated type image sensor structure. The local-thinned backside illuminated type image sensor structure and the packaging process of the local-thinned backside illuminated type image sensor structure have the advantages that the filling operation is avoided in the packaging process by changing the structure, the process difficulty is lowered while the structural stability is ensured, the product quality is ensured, and the rate of finished products is improved in the machining process.
Description
Technical field
The present invention relates to a kind of back side illumination image sensor, relate in particular to a kind of local reduction back side illumination image sensor structure and packaging technology thereof.
Background technology
What the encapsulation of local reduction's back side illumination image sensor adopted conventionally is Flip Chip Bond Technique, after chip manufacturing completes, need the salient point of first growing on pad, carry out again local reduction, after attenuate completes, chip is mounted on by Flip Chip Bond Technique on substrate (or shell), to carry out electricity interconnected, adopt subsequently filler to fill chip bottom space, its typical structure as shown in Figure 1, the problem existing is: be limited to existing structure and technique, the device that adopts common process to produce, between its chip and substrate, certainly exist gap, in order to ensure the structural stability of device, must adopt filler that the space between chip and substrate is filled, but be limited to equally the operability of fill process, filling inhomogeneous is phenomenon very common in fill process, and then cause back side illumination image sensor because filling inhomogeneous generation imaging background defect in bottom, cause product failure.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of new local reduction's back side illumination image sensor structure, it is made up of chip, padded layer, substrate, chip bonding pad, substrate pads, lead-in wire and optical window; Described chip upper surface is provided with local reduction's groove; Chip upper surface is connected with optical window, and described optical window covers local reduction's groove; Chip lower surface is connected with padded layer upper surface, and chip bonding pad is arranged on chip lower surface, and chip bonding pad is positioned at padded layer outside; Padded layer lower surface is connected with substrate upper surface, and substrate pads is arranged on substrate upper surface, and substrate pads is positioned at chip bonding pad outside; Between chip bonding pad and substrate pads, connect by lead-in wire; Chip bonding pad is arranged at padded layer object around, and substrate pads is arranged at the object in chip bonding pad outside, is all for the ease of the attended operation that goes between.
From aforementioned structure, we can find out, between chip and substrate, directly form stable solid connection by padded layer, thereby making does not need again chip bottom to be carried out to fill process in the course of processing, this has just been avoided the filling problem of non-uniform that may cause while adopting fill process, also just solved back side illumination image sensor because filling the inhomogeneous imaging background defect problem causing in bottom simultaneously, ensure product quality, rate of finished products is largely increased.
Preferably, between chip and optical window, be adhesively fixed by sticky matter.
Preferably, between chip and padded layer, be adhesively fixed by sticky matter.
Preferably, between padded layer and substrate, be adhesively fixed by sticky matter.
Preferably, described padded layer adopts silicon materials to make.
Preferably, padded layer thickness is 0.5～1mm.
Based on aforementioned structure, the invention allows for a kind of local reduction back side illumination image sensor packaging technology, as previously mentioned, concrete packaging technology is the structure of described local reduction back side illumination image sensor:
1) make the chip with local reduction's groove and chip bonding pad;
2) optical window is sticked on to the corresponding position on chip;
3) padded layer is sticked on to the corresponding position on chip;
4) adopt lead key closing process, one end of lead-in wire is connected with chip bonding pad;
5) corresponding position on padded layer by substrate sticking;
6) adopt lead key closing process, the other end of lead-in wire is connected with substrate pads, element manufacturing completes.
Each step in aforementioned packaging technology all adopts existing equipment and technique to realize, than existing packaging technology, packaging technology of the present invention is more simple, in encapsulation process without padding, technology difficulty is lower, can make the quality of product and rate of finished products all be protected.
Preferably, described padded layer adopts silicon materials to make.
Preferably, padded layer thickness is 0.5～1mm.
Useful technique effect of the present invention is: avoid carrying out padding by structural change in packaging technology, in ensureing structural stability, reduced technology difficulty, ensured product quality, improved the rate of finished products that adds man-hour.
Brief description of the drawings
The typical structure schematic diagram of Fig. 1, existing local reduction back side illumination image sensor;
Fig. 2, structural representation of the present invention;
In Fig. 3, packaging technology, device architecture schematic diagram when step 1) state;
In Fig. 4, packaging technology, step 2) device architecture schematic diagram when state;
In Fig. 5, packaging technology, device architecture schematic diagram when step 3) state;
In Fig. 6, packaging technology, device architecture schematic diagram when step 4) state;
In Fig. 7, packaging technology, device architecture schematic diagram when step 5) state;
In Fig. 8, packaging technology, device architecture schematic diagram when step 6) state;
In figure, the corresponding title of each mark is respectively: effective photographic department 10, local reduction's groove 11 on chip 1, padded layer 2, substrate 3, chip bonding pad 4, substrate pads 5, lead-in wire 6, optical window 7, salient point 8, the packed layer 9 being formed by filler, chip.
Embodiment
A kind of local reduction back side illumination image sensor structure, its structure is: described local reduction back side illumination image sensor is made up of chip 1, padded layer 2, substrate 3, chip bonding pad 4, substrate pads 5, lead-in wire 6 and optical window 7; Described chip 1 upper surface is provided with local reduction's groove; Chip 1 upper surface is connected with optical window 7, and described optical window 7 covers local reduction's groove; Chip 1 lower surface is connected with padded layer 2 upper surface, and chip bonding pad 4 is arranged on chip 1 lower surface, and chip bonding pad 4 is positioned at padded layer 2 outside; Padded layer 2 lower surface are connected with substrate 3 upper surfaces, and substrate pads 5 is arranged on substrate 3 upper surfaces, and substrate pads 5 is positioned at chip bonding pad 4 outsides; Between chip bonding pad 4 and substrate pads 5, connect by lead-in wire 6.
Further, between chip 1 and optical window 7, be adhesively fixed by sticky matter.
Further, between chip 1 and padded layer 2, be adhesively fixed by sticky matter.
Further, between padded layer 2 and substrate 3, be adhesively fixed by sticky matter.
Further, described padded layer 2 adopts silicon materials to make.
Further, padded layer 2 thickness are 0.5～1mm.
A kind of local reduction back side illumination image sensor packaging technology, the structure of described local reduction back side illumination image sensor is as previously mentioned; Make aforementioned local reduction back side illumination image sensor by following technique:
1) make the chip 1 with local reduction's groove and chip bonding pad 4;
2) optical window 7 is sticked on to the corresponding position on chip 1;
3) by padded layer 2 corresponding position sticking on chip 1;
4) adopt lead key closing process, one end of lead-in wire 6 is connected with chip bonding pad 4;
5) substrate 3 is sticked on to the corresponding position on padded layer 2;
6) adopt lead key closing process, the other end of lead-in wire 6 is connected with substrate pads 5, element manufacturing completes.
Further, described padded layer 2 adopts silicon materials to make.
Further, padded layer 2 thickness are 0.5～1mm.
Claims (9)
1. local reduction's back side illumination image sensor structure, is characterized in that: described local reduction back side illumination image sensor is made up of chip (1), padded layer (2), substrate (3), chip bonding pad (4), substrate pads (5), lead-in wire (6) and optical window (7); Described chip (1) upper surface is provided with local reduction's groove; Chip (1) upper surface is connected with optical window (7), and described optical window (7) covers local reduction's groove; Chip (1) lower surface is connected with padded layer (2) upper surface, and chip bonding pad (4) is arranged on chip (1) lower surface, and chip bonding pad (4) is positioned at padded layer (2) outside; Padded layer (2) lower surface is connected with substrate (3) upper surface, and substrate pads (5) is arranged on substrate (3) upper surface, and substrate pads (5) is positioned at chip bonding pad (4) outside; Between chip bonding pad (4) and substrate pads (5), connect by lead-in wire (6).
2. local reduction according to claim 1 back side illumination image sensor structure, is characterized in that: between chip (1) and optical window (7), be adhesively fixed by sticky matter.
3. local reduction according to claim 1 back side illumination image sensor structure, is characterized in that: between chip (1) and padded layer (2), be adhesively fixed by sticky matter.
4. local reduction according to claim 1 back side illumination image sensor structure, is characterized in that: between padded layer (2) and substrate (3), be adhesively fixed by sticky matter.
5. local reduction according to claim 1 back side illumination image sensor structure, is characterized in that: described padded layer (2) adopts silicon materials to make.
6. local reduction according to claim 1 back side illumination image sensor structure, is characterized in that: padded layer (2) thickness is 0.5～1mm.
7. local reduction's back side illumination image sensor packaging technology, described local reduction back side illumination image sensor is made up of chip (1), padded layer (2), substrate (3), chip bonding pad (4), substrate pads (5), lead-in wire (6) and optical window (7); Described chip (1) upper surface is provided with local reduction's groove; Chip (1) upper surface is connected with optical window (7), and described optical window (7) covers local reduction's groove; Chip (1) lower surface is connected with padded layer (2) upper surface, and chip bonding pad (4) is arranged on chip (1) lower surface, and chip bonding pad (4) is positioned at padded layer (2) outside; Padded layer (2) lower surface is connected with substrate (3) upper surface, and substrate pads (5) is arranged on substrate (3) upper surface, and substrate pads (5) is positioned at chip bonding pad (4) outside; Between chip bonding pad (4) and substrate pads (5), connect by lead-in wire (6); It is characterized in that: make aforementioned local reduction back side illumination image sensor by following technique:
1) make the chip (1) with local reduction's groove and chip bonding pad (4);
2) optical window (7) is sticked on to the corresponding position on chip (1);
3) padded layer (2) is sticked on to the corresponding position on chip (1);
4) adopt lead key closing process, the one end of will go between (6) is connected with chip bonding pad (4);
5) substrate (3) is sticked on to the corresponding position on padded layer (2);
6) adopt lead key closing process, the other end of will go between (6) is connected with substrate pads (5), and element manufacturing completes.
8. local reduction according to claim 6 back side illumination image sensor packaging technology, is characterized in that: described padded layer (2) adopts silicon materials to make.
9. local reduction according to claim 6 back side illumination image sensor packaging technology, is characterized in that: padded layer (2) thickness is 0.5～1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259565.1A CN103996687A (en) | 2014-06-12 | 2014-06-12 | Local-thinned backside illuminated type image sensor structure and packaging process thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410259565.1A CN103996687A (en) | 2014-06-12 | 2014-06-12 | Local-thinned backside illuminated type image sensor structure and packaging process thereof |
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| CN103996687A true CN103996687A (en) | 2014-08-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563340A (en) * | 2020-12-11 | 2021-03-26 | 深圳市灵明光子科技有限公司 | Photoelectric chip packaging method and structure |
| CN113823645A (en) * | 2020-06-18 | 2021-12-21 | 胜丽国际股份有限公司 | Sensor package structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040080029A1 (en) * | 2002-10-29 | 2004-04-29 | Chow Wai Wong | Optical sensor package |
| CN1967853A (en) * | 2005-11-15 | 2007-05-23 | 富士通株式会社 | Semiconductor device and manufacturing method of the same |
| CN102403325A (en) * | 2010-09-07 | 2012-04-04 | 索尼公司 | Semiconductor package and manufacturing method for a semiconductor package as well as optical module |
| CN103199098A (en) * | 2012-01-04 | 2013-07-10 | 奥普蒂兹公司 | Improved quantum efficiency back side illuminated CMOS image sensor and package, and method of making same |
-
2014
- 2014-06-12 CN CN201410259565.1A patent/CN103996687A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040080029A1 (en) * | 2002-10-29 | 2004-04-29 | Chow Wai Wong | Optical sensor package |
| CN1967853A (en) * | 2005-11-15 | 2007-05-23 | 富士通株式会社 | Semiconductor device and manufacturing method of the same |
| CN102403325A (en) * | 2010-09-07 | 2012-04-04 | 索尼公司 | Semiconductor package and manufacturing method for a semiconductor package as well as optical module |
| CN103199098A (en) * | 2012-01-04 | 2013-07-10 | 奥普蒂兹公司 | Improved quantum efficiency back side illuminated CMOS image sensor and package, and method of making same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113823645A (en) * | 2020-06-18 | 2021-12-21 | 胜丽国际股份有限公司 | Sensor package structure |
| CN112563340A (en) * | 2020-12-11 | 2021-03-26 | 深圳市灵明光子科技有限公司 | Photoelectric chip packaging method and structure |
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Application publication date: 20140820 |