CN103996605B - 一种脉冲激光沉积与分子束外延联用镀膜设备及其应用 - Google Patents
一种脉冲激光沉积与分子束外延联用镀膜设备及其应用 Download PDFInfo
- Publication number
- CN103996605B CN103996605B CN201410239937.4A CN201410239937A CN103996605B CN 103996605 B CN103996605 B CN 103996605B CN 201410239937 A CN201410239937 A CN 201410239937A CN 103996605 B CN103996605 B CN 103996605B
- Authority
- CN
- China
- Prior art keywords
- gan
- substrate
- pulsed laser
- mbe
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 67
- 238000004549 pulsed laser deposition Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000001704 evaporation Methods 0.000 claims abstract description 19
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 239000010453 quartz Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 74
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 229910010936 LiGaO2 Inorganic materials 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 11
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- 238000000407 epitaxy Methods 0.000 claims description 10
- 238000000608 laser ablation Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005422 blasting Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 4
- 230000033228 biological regulation Effects 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000000097 high energy electron diffraction Methods 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 230000001502 supplementing effect Effects 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 32
- 239000010409 thin film Substances 0.000 abstract description 15
- 230000008901 benefit Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000011161 development Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 241001025261 Neoraja caerulea Species 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000010406 interfacial reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410239937.4A CN103996605B (zh) | 2014-05-30 | 2014-05-30 | 一种脉冲激光沉积与分子束外延联用镀膜设备及其应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410239937.4A CN103996605B (zh) | 2014-05-30 | 2014-05-30 | 一种脉冲激光沉积与分子束外延联用镀膜设备及其应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103996605A CN103996605A (zh) | 2014-08-20 |
CN103996605B true CN103996605B (zh) | 2016-10-19 |
Family
ID=51310725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410239937.4A Active CN103996605B (zh) | 2014-05-30 | 2014-05-30 | 一种脉冲激光沉积与分子束外延联用镀膜设备及其应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103996605B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11848202B2 (en) | 2021-11-30 | 2023-12-19 | Applied Materials, Inc. | Growth monitor system and methods for film deposition |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105703732A (zh) * | 2016-01-18 | 2016-06-22 | 佛山市艾佛光通科技有限公司 | 一种基于单晶AlN的薄膜体声波谐振器制备方法 |
CN111636051B (zh) * | 2020-05-18 | 2022-09-23 | 广西大学 | 一种非晶InGaN/Si异质结太阳电池的装置及其制备方法 |
CN113097349B (zh) * | 2021-06-09 | 2021-08-06 | 新磊半导体科技(苏州)有限公司 | 一种利用分子束外延制备雪崩光电二极管的方法 |
CN114349541A (zh) * | 2021-12-23 | 2022-04-15 | 西安交通大学 | 一种注入金属离子的多层陶瓷扩散偶的制备方法 |
CN117286568A (zh) * | 2023-11-22 | 2023-12-26 | 希科半导体科技(苏州)有限公司 | 碳化硅衬底的外延生长设备、方法、以及碳化硅外延片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035789A (zh) * | 2012-12-11 | 2013-04-10 | 华南理工大学 | 生长在LiGaO2衬底上的非极性蓝光LED外延片及其制备方法 |
CN203895413U (zh) * | 2014-05-30 | 2014-10-22 | 广州市众拓光电科技有限公司 | 一种脉冲激光沉积与分子束外延联用镀膜设备 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60334998D1 (de) * | 2002-08-28 | 2010-12-30 | Moxtronics Inc | Hybridstrahl-beschichtungssystem und verfahren zur herstellung von zno-schichten |
-
2014
- 2014-05-30 CN CN201410239937.4A patent/CN103996605B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035789A (zh) * | 2012-12-11 | 2013-04-10 | 华南理工大学 | 生长在LiGaO2衬底上的非极性蓝光LED外延片及其制备方法 |
CN203895413U (zh) * | 2014-05-30 | 2014-10-22 | 广州市众拓光电科技有限公司 | 一种脉冲激光沉积与分子束外延联用镀膜设备 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11848202B2 (en) | 2021-11-30 | 2023-12-19 | Applied Materials, Inc. | Growth monitor system and methods for film deposition |
Also Published As
Publication number | Publication date |
---|---|
CN103996605A (zh) | 2014-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103996605B (zh) | 一种脉冲激光沉积与分子束外延联用镀膜设备及其应用 | |
CN102945898B (zh) | 生长在金属Ag衬底上的AlN薄膜及其制备方法、应用 | |
CN102945899B (zh) | 生长在金属Ag衬底上的GaN单晶薄膜及其制备方法、应用 | |
JP2008235877A (ja) | 太陽電池及びその製造方法 | |
CN108206130B (zh) | 生长在铝箔衬底上的氮化铟纳米柱外延片及其制备方法 | |
CN103035496B (zh) | 一种生长在Si衬底上的GaN薄膜及其制备方法和应用 | |
CN101506946B (zh) | Ⅲ族氮化物化合物半导体发光元件的制造方法、ⅲ族氮化物化合物半导体发光元件和灯 | |
JP5355221B2 (ja) | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 | |
CN101925979A (zh) | Iii族氮化物半导体的制造方法、iii族氮化物半导体发光元件的制造方法以及iii族氮化物半导体发光元件及灯 | |
CN106299041A (zh) | 生长在r面蓝宝石衬底上的非极性LED外延片的制备方法及应用 | |
CN107881472A (zh) | 一种CsPbI3薄膜的制备方法 | |
CN103035789B (zh) | 生长在LiGaO2衬底上的非极性蓝光LED外延片及其制备方法 | |
JP2009224774A (ja) | 太陽電池及びその製造方法 | |
Park et al. | A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure | |
CN103996764B (zh) | 生长在Ag衬底的LED外延片及其制备方法和应用 | |
CN108807617A (zh) | 生长在硅/石墨烯复合衬底上的GaN基纳米柱LED外延片及其制备方法 | |
CN103996611B (zh) | 一种生长在金属Al衬底上的GaN薄膜及其制备方法和应用 | |
CN103996756B (zh) | 一种镀膜方法及其应用 | |
CN203085627U (zh) | 生长在LiGaO2衬底上的非极性蓝光LED外延片 | |
CN106328774A (zh) | 一种GaN薄膜的外延生长方法及应用 | |
CN203895413U (zh) | 一种脉冲激光沉积与分子束外延联用镀膜设备 | |
CN101517759B (zh) | Ⅲ族氮化物化合物半导体发光元件的制造方法 | |
CN206116446U (zh) | 生长在铝酸锶钽镧衬底上的GaN纳米柱 | |
CN102185071B (zh) | 一种非极性ZnO基发光器件及其制备方法 | |
CN208848921U (zh) | 生长在硅/石墨烯复合衬底上的GaN基纳米柱LED外延片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170410 Address after: 517000 Guangdong high tech Development Zone, Industrial Avenue, east of the East, the first high tech service center on the third floor, room 317, Patentee after: HEYUAN CHOICORE PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: The science city of Guangzhou high tech Industrial Development Zone 510000 Guangdong province Guangzhou Nanxiang Road No. 62 building Patentee before: GUANGZHOU ZHONGTUO PHOTOELECTRIC TECHNOLOGY CO.,LTD. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220225 Address after: 510700 room 1103, building B2, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou Everbright Technology Co.,Ltd. Address before: 517000 room 317, third floor, entrepreneurship service center, Gaoxin 1st Road, east of Xingye Avenue, Heyuan high tech Development Zone, Guangdong Province Patentee before: HEYUAN CHOICORE PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A coating equipment for combination of pulsed laser deposition and molecular beam epitaxy and its application Effective date of registration: 20220926 Granted publication date: 20161019 Pledgee: Agricultural Bank of China Co.,Ltd. Heyuan Yuancheng District Sub branch Pledgor: Guangzhou Everbright Technology Co.,Ltd. Registration number: Y2022980016273 |