CN103985687A - Silver alloy solder wire for semiconductor package - Google Patents
Silver alloy solder wire for semiconductor package Download PDFInfo
- Publication number
- CN103985687A CN103985687A CN201410040467.9A CN201410040467A CN103985687A CN 103985687 A CN103985687 A CN 103985687A CN 201410040467 A CN201410040467 A CN 201410040467A CN 103985687 A CN103985687 A CN 103985687A
- Authority
- CN
- China
- Prior art keywords
- silver alloy
- additive
- wire
- percentage
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 229910000679 solder Inorganic materials 0.000 title abstract description 4
- 239000000654 additive Substances 0.000 claims abstract description 66
- 230000000996 additive effect Effects 0.000 claims abstract description 66
- 238000003466 welding Methods 0.000 claims abstract description 52
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims abstract description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000012536 packaging technology Methods 0.000 description 6
- 239000011265 semifinished product Substances 0.000 description 6
- 238000004382 potting Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000010998 test method Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Conductive Materials (AREA)
Abstract
A silver alloy solder wire for semiconductor packaging comprises a silver alloy component including silver, palladium, and a first additive, wherein the weight percentage of palladium is greater than 0 and not greater than 2wt% based on 100wt% of the weight percentage of the silver alloy component, the weight percentage of the first additive is not less than 0.001wt% and not greater than 2wt%, and the first additive is selected from indium, tin, scandium, bismuth, antimony, manganese, zinc, and a combination thereof. According to the invention, through the palladium and the first additive in a preset proportion, the stability of an arc formed by the silver alloy welding wire after wire bonding is effectively improved, and the arc is not easy to topple.
Description
Technical field
The present invention relates to a kind of welding lead, particularly relate to a kind of welding of the silver alloy for semiconductor packages wire.
Background technology
In semiconductor packaging field, packaging technology is mainly by the mode of welding, by a welding lead (or citing approvingly line) to be electrically connected the pad (pad) of semiconductor chip (or claim IC chip), and the conducting wire of printed circuit board (PCB) (PCB), form a packaging semi-finished product; Then, this packaging semi-finished product is arranged to an accommodation space of an enclosed seat, then fills a potting resin at this accommodation space, and make this potting resin be coated this packaging semi-finished product, this packaging semi-finished product is isolated from the outside, form a packaging part.
Due to the high and good stability of conductance of gold (Au), be difficult for and the metal reaction of other kinds, so welding lead is in the past normally taking gold thread as main.But well known, gold is the metal worthing a jew's eye, in the time that the required semiconductor chip quantity that is welded in printed circuit board (PCB) is large or required welding lead circuit is many, the with high costs of overall package part will be made.
Accordingly, the researcher of affiliated technical field transfers the development cost lower welding lead of gold relatively to, because the conductance of silver is high, and becomes the main material that substitutes golden welding lead.The open case of TaiWan, China patent just discloses a kind of silver alloy wire No. 201001652, mainly that 0.05～5wt.% platinum, rhodium, osmium, gold, palladium are made an addition to and in silver, improve the reliability under high humidity environment, the solder side suppressing between argentiferous alloy lead wire and semiconductor chip connection pad forms oxide-film and galvanic corrosion occurs, to prevent solder side generation die crack and to improve weld strength, and further add again the improvement such as calcium, barium and connect workability and the hot strength of wire containing silver-alloy brazing.
But, continue along with Moore ＇ s law micro size in technology of semiconductor chips field, relatively, the footpath of welding lead that is welded in the pad of semiconductor chip is wide also little.Inventor finds, although the appearance of silver alloy wire reduces wire rod cost and solves the poor problem of silver-colored wire plasticity; But, in the situation that wire diameter width must be more and more less, how to control and after alloying element and content make silver alloy welding wire fill potting resin after Bonding or Bonding, be difficult for toppling over and maintain loop height stability (namely arc stability), and then avoid the problem of short circuit, become a problem important and urgently to be resolved hurrily.
Summary of the invention
Silver alloy for semiconductor packages welding wire of the present invention, comprise a silver alloy component, this silver alloy component comprises silver, palladium, and one first additive, the percentage by weight based on this silver alloy component is in 100wt%, and the percentage by weight of palladium is greater than 0 and be not more than 2wt%, the percentage by weight of this first additive is not less than 0.001wt%, and be not more than 2wt%, this first additive is selected from indium, tin, scandium, bismuth, calcium halophosphate activated by antimony andmanganese, zinc, and a wherein combination.
Silver alloy for semiconductor packages welding wire of the present invention, this silver alloy component also comprises one second additive, percentage by weight based on this silver alloy component is in 100wt%, the percentage by weight of this second additive is not less than 0.001wt%, be not more than 2wt%, and this second additive is selected from copper, nickel, cobalt, niobium, titanium, vanadium, and a wherein combination.
Silver alloy for semiconductor packages welding wire of the present invention, the percentage by weight summation of this first additive and this second additive is not more than 2wt%.
Silver alloy for semiconductor packages welding wire of the present invention, this first additive is selected from indium, tin, zinc, and a wherein combination.
Silver alloy for semiconductor packages welding wire of the present invention, this second additive is selected from copper, nickel, and combination.
Beneficial effect of the present invention is: palladium, this first additive of the silver alloy component of silver alloy welding wire, and this second additive is while having specific percentage by weight, can make this silver alloy wire tensile strength, stretch line outage, and loop height stability after seam is splendid, and the utmost point is suitable for the packaging technology of the semiconductor chip of very small dimensions.
Brief description of the drawings
Nothing
Embodiment
About the present invention is aforementioned and other technology contents, feature and effect, in the detailed description of following two preferred embodiments, can clearly present.
The present invention is the conducting wire that is electrically connected a pad and a circuit board of semiconductor chip in packaging technology in the mode of welding for the purposes of the silver alloy welding wire of semiconductor packages, forms a packaging semi-finished product (scheming not shown).In more detail, in semiconductor packaging field, the mode of welding is taking Bonding as main.And after Bonding, this packaging semi-finished product is arranged in an accommodation space of an enclosed seat, recharge a potting resin, form a packaging part, and complete the key step of packaging technology.
The present invention comprises a silver alloy component for one first preferred embodiment of the silver alloy welding wire of semiconductor packages, this silver alloy component comprises silver, palladium, and one first additive, this first additive is selected from indium, tin, scandium, antimony, bismuth, manganese, zinc, and a wherein combination.In the percentage by weight of this silver alloy component, with 100wt%, the percentage by weight of palladium is greater than 0 and be not more than 2wt%, and the percentage by weight of this first additive is not less than 0.001wt%, and is not more than 2wt%.It should be noted that, in this preferred embodiment, except the palladium and this first additive of this silver alloy component, all the other content are silver, and be not limited only to contain silver, promote the physical property of other kinds of this silver alloy welding wire if need, for example conductance, also can optionally add the suitable element of predetermined ratio.
Wherein the addition of this first additive is few, and by phasor learn the first additive and silver-colored solid solubility high, easily form solution strengthening, and this first additive also possesses the oxidation resistant characteristic of Assisted Ag, make silver alloy welding wire of the present invention improve toughness and loop height stability by the first additive of this predetermined ratio, and then the arc that the silver alloy welding wire of Bonding after the pad of this semiconductor chip and the wire circuit of this printed circuit board (PCB) formed is stable, solves afterwards and in packaging technology, fills the problem that potting resin is easily toppled over.
When the percentage by weight of this first additive is during higher than 2wt%, although can improve the loop height stability (namely arc stability) after Bonding, easily cause stretching line outage too high; When the percentage by weight of this first additive is during lower than 0.001wt%, easily cannot improve the loop height stability after toughness and the Bonding of welding lead because the content of this first additive in this silver alloy welding wire is too low.
The present invention is similar to this first preferred embodiment for one second preferred embodiment of the silver alloy welding wire of semiconductor packages, its difference is in this silver alloy component and also comprises one second additive, this second additive is selected from copper, nickel, cobalt, niobium, titanium, vanadium, and a wherein combination.Percentage by weight based on this silver alloy component is 100wt% meter, the percentage by weight of palladium is greater than 0 and be not more than 2wt%, and the percentage by weight of this first additive is not less than 0.001wt%, and is not more than 2wt%, the percentage by weight of this second additive is not less than 0.001wt%, and is not more than 2wt%.
The atomic size of this second additive is less than silver-colored atomic size, and is difficult to form displaced type solid solution; Therefore, this second additive should insert gap between silver atoms and form intermittence solid solution, so produce gap strengthening and with silver-colored solid solution, promote afterwards the tensile strength of this silver alloy wire, promote loop height stability after welding simultaneously.But, in the time that the percentage by weight of this second additive is greater than 2wt%, though improve the welding lead that cannot form the arc of stable and high camber dispersion ratio when the tensile strength of silver alloy wire can make lead key closing process; In the time that the percentage by weight of this second additive is less than 0.001wt%, because its content is too low, and cannot effectively promote tensile strength.
Preferably, the percentage by weight summation of this first additive and this second additive is not more than 2wt%.
More preferably, this first additive is selected from indium, tin, zinc, and a wherein combination, and this second additive is selected from copper, nickel, and combination.
Also it should be noted that, current raw metal is mainly to make through refining, so be just fine silver, with refinement technique now, still be difficult to contain the trace impurity that trace cannot separate with avoiding, so alleged silver-colored purity is more than 99.99%, and ignore trace impurity wherein herein; In addition, palladium, this first additive, and the purity of this second additive is also more than 99.99%.
< concrete example and test result > thereof
The test event that following table 1 is used in the silver alloy welding concrete example 1～14 of wire of semiconductor packages and the component ratio of comparative example 1～6 and carries out for the present invention.Wherein, concrete example 1～5 hereby belongs to this first preferred embodiment, and concrete example 6～14 hereby belongs to this second preferred embodiment, and stretches line outage, tensile strength, and the test of loop height stability.
The manufacture method of concrete example and comparative example is mainly silver, the palladium that is first greater than 99.99% with purity, and the first additive, the second additive are raw material.
First, first prepare the weight percent of the listed each raw material of table 1; Then, form the silver alloy bus of the wide 8～10mm of being in footpath through casting; Continue, then this silver alloy bus is imposed continuously and rough Wiring technology and middle bracing wire technique for several times, the silver alloy bus of the footpath area that makes this silver alloy bus before compared with bracing wire technique dwindles 97%.
Then, to the heat treatment of annealing of this silver alloy bus, then the silver alloy bus after this annealing is imposed continuously and thin bracing wire technique for several times and ultra-fine bracing wire technique form a silver alloy welding wire; Finally, then to the heat treatment of annealing of this silver alloy welding wire, and become silver alloy welding wire of the present invention.Wherein, because rough Wiring technology, middle bracing wire technique, thin bracing wire technique and ultra-fine bracing wire technique belong to continuous processing technology to this silver alloy bus after bracing wire technique or the silver alloy welding wire heat treated reason of annealing, when a silver alloy wire rod is after being constantly out of shape and being pullled, a large amount of stress will be built up at wire internal, and the bus of being pullled also hardens because forming dislocation (dislocation), so rearrange for the atom of silver alloy wire rod by annealing heat treatment, and discharging stress, softening this silver alloy welds wire afterwards.
The method of testing of concrete example and comparative example is below described.It is mainly the engineering properties that shows silver alloy welding wire of the present invention with hot strength, shows the quality of silver alloy welding wire of the present invention to stretch line outage and loop height stability.
[method of testing of hot strength]
The welding lead to be measured that preparation length is 10cm, is pulled down to broken string with the speed of 0.1～1 centimetre per minute in atmospheric environment by this welding lead to be measured, and uses the hot strength of this welding lead of JIS Z2201 standard testing criterion.
[stretching the method for testing of line outage]
Measure through the broken string frequency of heat treated this silver alloy bus in thin bracing wire technique of annealing.This silver alloy bus carries out thin bracing wire technique and this fine rule length is pulled to is greater than 5000m, and measures the number of times that broken string occurs.
In table 1, represent broken string 0 time with " ◎ "; Represent to break 1 time with "○"; Represent broken string 2～3 times with " △ "; Represent that with "×" broken string is not less than 4 times; Wherein, broken string represents that outage is extremely low for 0 time; Break and represent that outage is lower for 1 time; Break and represent that outage is O-level for 2～3 times; Broken string is not less than and represents that outage is high for 4 times.
[method of testing of loop height stability]
This silver alloy welding wire bonds is formed to a bonding wire on a pad, repeat altogether to form 100 bonding wires, and the camber that maintains each bonding wire is 100 μ m.Especially, in this method of testing, be that the camber of unified described bonding wire is 100 μ m, certainly, the bonding wire that can be also 200 μ m by 100 camber, or the bonding wire test loop high stability that in affiliated technical field, usual camber forms.
Then,, taking label as OLYMPUS, the light microscope (OpticalMicroscope is called for short OM) that model is BX51M detects the appearance difference of described bonding wire.
In table 1, indicate with " ◎ " bonding wire that 0 appearance differs greatly; Indicate with "○" the bonding wire that 1 appearance differs greatly; Indicate with " △ " bonding wire that 2 appearance differ greatly; Indicate to be not less than with "×" the bonding wire that 3 appearance differ greatly; Wherein, the bonding wire that has 0 appearance to differ greatly represents that loop height stability is splendid; The bonding wire that has 1 appearance to differ greatly represents that loop height stability is better; The bonding wire that has 2 appearance to differ greatly represents that loop height stability is common; Have and be not less than the bonding wire that 3 appearance differ greatly and represent loop height stability extreme difference.
Table 1
Concrete example 1～6 by table 1 can be understood, when the percentage by weight of palladium is greater than 0 and be not more than 2wt%, when the percentage by weight of this first additive is not less than 0.001wt% and is not more than 2wt%, its tensile strength is all greater than 17g, and stretches line outage and loop height stability and also have common to splendid degree; Review comparative example 4, in the time not having this first additive, it is stretched line outage, tensile strength and loop height stability and is not all reached preferably degree; Consult comparative example 2～3, when the percentage by weight of palladium is greater than 2wt%, or when the palladium, even if having the first additive of 1wt%, its tensile strength is also less than 16g, and its loop height stability extreme difference again; Referring again to comparative example 5～6, in the time that the percentage by weight of this first additive is greater than 2wt%, even if having the palladium of 1.5wt%, its tensile strength is less than 15g, and to stretch line outage be poor degree.
Secondly, can be understood by concrete example 6～14, when silver alloy welding wire of the present invention also comprises this second additive, the percentage by weight of this second additive is not less than 0.001wt%, and while being not more than 2wt%, can promote the degree of loop height stability arrival " better " to " splendid "; Can be learnt by comparative example 6, in the time that this second additive is greater than 2wt%, cause on the contrary stretching line outage, tensile strength and loop height stability not good.
Although, the test result of comparative example 1 shows that it still belongs to the scope that is suitable as welding lead, but because gold is expensive metal material, certainly will significantly increase welding lead cost if contain gold in welding lead, and one of them object of the present invention is that research and development replacement contains golden wire component ratio, so comparative example 1 is for reference only used.
Finally, from concrete example 12, when this first additive is tin and indium, this second additive is copper, and the summation of this first additive and this second additive is while being not more than 2wt%, has best test result, no matter represent in mechanical strength or welding quality, have more outstanding performance.
In sum, palladium, this first additive of the silver alloy component of silver alloy welding wire of the present invention, and this second additive is while having specific percentage by weight, can make this silver alloy wire tensile strength, stretch line outage, and loop height stability after seam is splendid, and the utmost point is suitable for the packaging technology of the semiconductor chip of very small dimensions, so really can reach object of the present invention.
Below only add and give explanation with regard to concrete constructed embodiment of the present invention, under without separated structure of the present invention and spirit, allly be skillful in those skilled in the art scholar, still can do all variations and modification, all this changes and is still considered as being encompassed in the following claim of this case with modifying.
Claims (5)
1. the welding of the silver alloy for a semiconductor packages wire, it is characterized in that: this silver alloy welding wire comprises a silver alloy component, this silver alloy component comprises silver, palladium, and one first additive, percentage by weight based on this silver alloy component is 100wt% meter, the percentage by weight of palladium is greater than 0 and be not more than 2wt%, the percentage by weight of this first additive is not less than 0.001wt%, and be not more than 2wt%, this first additive is selected from indium, tin, scandium, antimony, bismuth, manganese, zinc, and a wherein combination.
2. weld wire for the silver alloy of semiconductor packages according to claim 1, it is characterized in that: this silver alloy component also comprises one second additive, percentage by weight based on this silver alloy component is 100wt% meter, the percentage by weight of this second additive is not less than 0.001wt%, be not more than 2wt%, and this second additive is selected from copper, nickel, cobalt, niobium, titanium, vanadium, and a wherein combination.
3. according to claim 2 for the silver alloy welding wire of semiconductor packages, it is characterized in that: the percentage by weight summation of this first additive and this second additive is not more than 2wt%.
4. according to claim 1 for the silver alloy welding wire of semiconductor packages, it is characterized in that: this first additive is indium, tin, zinc, or a wherein combination.
5. according to claim 2 for the silver alloy welding wire of semiconductor packages, it is characterized in that: this second additive is selected from copper, nickel, and combination.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102104864 | 2013-02-07 | ||
| TW102104864A TWI536396B (en) | 2013-02-07 | 2013-02-07 | Silver alloy soldered wire for semiconductor packages |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103985687A true CN103985687A (en) | 2014-08-13 |
| CN103985687B CN103985687B (en) | 2018-04-06 |
Family
ID=51277600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410040467.9A Active CN103985687B (en) | 2013-02-07 | 2014-01-27 | Silver alloy solder wire for semiconductor package |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103985687B (en) |
| TW (1) | TWI536396B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108062991A (en) * | 2016-11-08 | 2018-05-22 | 光大应用材料科技股份有限公司 | Silver alloy wire rod |
| CN108183075A (en) * | 2017-12-27 | 2018-06-19 | 汕头市骏码凯撒有限公司 | A kind of silver alloy bonding wire and its manufacturing method |
| CN109763015A (en) * | 2019-03-25 | 2019-05-17 | 杭州辰卓科技有限公司 | A kind of damp type high thermal conductivity silver of resistance to brittle failure bonding line material used for electronic packaging |
| CN111599783A (en) * | 2020-04-03 | 2020-08-28 | 广东佳博电子科技有限公司 | Silver-platinum bonding wire utilizing silver-platinum coating and preparation process thereof |
| WO2022085365A1 (en) * | 2020-10-20 | 2022-04-28 | 日鉄マイクロメタル株式会社 | Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6913265B1 (en) * | 2019-11-22 | 2021-08-04 | 日鉄ケミカル＆マテリアル株式会社 | Ag alloy bonding wire for semiconductor devices |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006132410A1 (en) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for electrode, wiring and electromagnetic shielding |
| US20080240975A1 (en) * | 2007-03-30 | 2008-10-02 | Mk Electron Co. Ltd. | Ag-based alloy wire for semiconductor package |
| US20100239456A1 (en) * | 2009-03-23 | 2010-09-23 | Lee Jun-Der | Composite alloy bonding wire and manufacturing method thereof |
| CN102154574A (en) * | 2010-10-18 | 2011-08-17 | 东莞市正奇电子有限公司 | Alloy wire for connecting semiconductor components |
| JP2012049198A (en) * | 2010-08-24 | 2012-03-08 | Sumitomo Metal Mining Co Ltd | Silver bonding wire |
-
2013
- 2013-02-07 TW TW102104864A patent/TWI536396B/en active
-
2014
- 2014-01-27 CN CN201410040467.9A patent/CN103985687B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006132410A1 (en) * | 2005-06-10 | 2006-12-14 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for electrode, wiring and electromagnetic shielding |
| US20080240975A1 (en) * | 2007-03-30 | 2008-10-02 | Mk Electron Co. Ltd. | Ag-based alloy wire for semiconductor package |
| US20100239456A1 (en) * | 2009-03-23 | 2010-09-23 | Lee Jun-Der | Composite alloy bonding wire and manufacturing method thereof |
| JP2012049198A (en) * | 2010-08-24 | 2012-03-08 | Sumitomo Metal Mining Co Ltd | Silver bonding wire |
| CN102154574A (en) * | 2010-10-18 | 2011-08-17 | 东莞市正奇电子有限公司 | Alloy wire for connecting semiconductor components |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108062991A (en) * | 2016-11-08 | 2018-05-22 | 光大应用材料科技股份有限公司 | Silver alloy wire rod |
| CN108183075A (en) * | 2017-12-27 | 2018-06-19 | 汕头市骏码凯撒有限公司 | A kind of silver alloy bonding wire and its manufacturing method |
| CN108183075B (en) * | 2017-12-27 | 2020-05-19 | 汕头市骏码凯撒有限公司 | Silver alloy bonding wire and manufacturing method thereof |
| CN109763015A (en) * | 2019-03-25 | 2019-05-17 | 杭州辰卓科技有限公司 | A kind of damp type high thermal conductivity silver of resistance to brittle failure bonding line material used for electronic packaging |
| CN111599783A (en) * | 2020-04-03 | 2020-08-28 | 广东佳博电子科技有限公司 | Silver-platinum bonding wire utilizing silver-platinum coating and preparation process thereof |
| WO2022085365A1 (en) * | 2020-10-20 | 2022-04-28 | 日鉄マイクロメタル株式会社 | Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201432716A (en) | 2014-08-16 |
| CN103985687B (en) | 2018-04-06 |
| TWI536396B (en) | 2016-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103985687A (en) | Silver alloy solder wire for semiconductor package | |
| CN102437136B (en) | Bonding alloy wire and production technology thereof | |
| TWI518706B (en) | Bonding wire for semiconductor devices | |
| CN102130068B (en) | Alloy-type bonding wire with composite plating on surface | |
| US9972595B2 (en) | Bonding wire for high-speed signal line | |
| CN109003903B (en) | Gold bonding wire and preparation method thereof | |
| JPWO2006035803A1 (en) | Au alloy bonding wire | |
| CN101386930A (en) | Method of preparing linking copper wire | |
| CN102226991A (en) | Copper palladium alloy monocrystal bonding wire and manufacturing method thereof | |
| TWI403596B (en) | Copper alloy wire for semiconductor packaging | |
| JP5541440B2 (en) | Alloy wire and manufacturing method thereof | |
| TW201247904A (en) | Ag-based alloy wire and method for manufacturing the same | |
| KR100801444B1 (en) | Au-Ag based alloy wire for a semiconductor package | |
| CN106992164A (en) | A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof | |
| CN105063407A (en) | Sliver alloy bonding wire for LED packaging, and manufacturing method thereof | |
| CN111081670A (en) | Low-cost silver-based bonding alloy wire and preparation method and application thereof | |
| CN106244844A (en) | A kind of copper cash of quasiconductor and preparation method thereof | |
| CN101431029B (en) | Composite metal line for packaging wire and manufacturing method thereof | |
| CN105671355B (en) | Low-cost alloy bonding wire and preparation method and application thereof | |
| CN108701622B (en) | Bonding wire | |
| CN104299954A (en) | Copper wire for semiconductor welding | |
| CN103824833A (en) | Copper alloy wire used for packaging of semiconductor | |
| CN107195608A (en) | A kind of copper microalloy bonding line and preparation method thereof | |
| TWI532057B (en) | Silver alloy welding wire | |
| JP2013048169A (en) | Wire for ball bonding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |