CN103972199A - 线键合方法和结构 - Google Patents

线键合方法和结构 Download PDF

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Publication number
CN103972199A
CN103972199A CN201410043610.XA CN201410043610A CN103972199A CN 103972199 A CN103972199 A CN 103972199A CN 201410043610 A CN201410043610 A CN 201410043610A CN 103972199 A CN103972199 A CN 103972199A
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China
Prior art keywords
matrix
leadframe
layer
lead
wire
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CN201410043610.XA
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CN103972199B (zh
Inventor
O·J·洛佩兹
J·A·诺奇尔
J·A·赫布斯摩尔
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

本发明涉及一种集成电路（“IC”）组件，其包括在其顶面上具有金属化层的IC模片。多个引线62、64、66、68在其第一端部70被键合到金属化层60。被附着到金属化层60的导电层80覆盖引线62、64、66、68的第一端部70。

Description

线键合方法和结构
技术领域
背景技术
半导体器件必须彼此电连接或电连接到其他电子器件或例如印刷电路板和载板的互连板才有用。通常使用由导电金属例如铜、银或金制成的引脚框将半导体器件电连接到其他电子器件。将半导体器件连接到引脚框和/或其他电子装置的一个流行且灵活的方法是线键合。键合线通常由铝、铜或金构成。在高功率应用中的键合线直径通常在从大约15μm到几百微米的范围内。存在两种基本的线键合类型——球形键合和楔形键合。
球形键合通常使用热、压力和超声能量的组合。在球形键合中，通过被称为毛细管的保持并分配导线的工具施加高压电荷，小熔化球在键合线的端部形成。所述球被放置与芯片的电接触表面相接触，该电接触表面通常是铜的或铝的。接着，施加热、压力和超声能量的组合，这产生所述球与其接触的金属表面之间的焊接。球形键合有时候被称为第一键合，这是因为其通常是IC芯片/模片到引脚框的线键合中进行的第一键合。
在模片引脚框互连中，通常用于将键合线的第二端部连接到引脚框的线键合类型被称为楔形键合或有时候被称为第二键合。其通过压碎引脚框或其他金属表面与毛细管工具的顶端之间的键合线的端部形成。
引脚框常常形成半导体器件与其他电子器件之间电连接的一部分。在某些情况下，模片和将其连接到引脚框的键合线被密封在通常通过成型操作形成的硬质保护壳内。引脚框的引线部分的一个或更多个表面未被保护壳覆盖，并且可以被电气和机械连接到外部电路。集成电路（“IC”）模片、引脚框、键合线和封装材料的组合通常被称为集成电路封装（IC封装）。有各种类型的IC封装。IC封装之间的差异主要由引脚框的引线部分如何裸露、裸露引线部分的配置和数量、封装如何被装配以及封装的尺寸或形状来确定。例如，下面是市售的所谓“扁平封装”的列表：
·扁平封装，早期的具有扁平引线的金属/陶瓷壳
·CFP：陶瓷扁平封装
·CQFP：陶瓷四方扁平封装，类似于PQFP
·BQFP：缓冲式四方扁平封装
·DFN：双扁平封装，无引线
·ETQFP：裸露薄型四方扁平封装
·PQFN：功率四方扁平封装，无引线，具有用于散热的裸露模片焊盘（多于一个）
·PQFP：塑料四方扁平封装
·LQFP：低矮四方扁平封装
·QFN：四方扁平无引线，也被称为微型引线框（MLF）。
·四方扁平封装：（QFP）
·MQFP-公制四方扁平封装，具有公制接脚分配的QFP
·HVQFN：散热片非常薄四方扁平封装无引线
·SIDEBRAZE
·TQFP：薄型四方扁平封装
·TQFN：薄型四方扁平无引线
·VQFB：非常薄四方扁平封装
即使以类型和尺寸分类来获得IC封装，但是其特定特征，例如IC模片与引脚框之间的线键合连接在各种封装中基本一致。
发明内容
附图说明
图1是作为功率四方扁平无引线（“PQFN”）封装的子组件的集成电路组件在形成过程中的一个阶段的顶部等距视图。
图2是图1的集成电路组件的侧视图。
图3是另一个集成电路组件在比图1晚的PQFN封装形成过程阶段的顶部等距视图。
图4是图3的集成电路组件的侧视图。
图5是由图1-4的集成电路组件形成的成型PQFN封装的顶部等距视图。
图6是图5的成型PQFN封装的底部等距视图。
图7是将集成电路模片（“IC”）附着到外部电路的方法的流程图。
具体实施方式
本说明书主要公开了图3的集成电路（“IC”）组件8，其包括IC模片50，IC模片50具有在其第一（顶部）面上的金属化层60。如图1所示，多个引线62、64、66、68在其第一端部70被键合到顶部金属化层60。如图3所示，被附着到顶部金属化层60的导电层80覆盖引线62等的第一端部70。因此已经大体描述IC组件8，其各种实施例以及可由其形成的图5和6的成型功率四方扁平无引线（“PQFN”）封装100，以及制造这类IC组件和封装的方法现将被详细描述。
如本文所使用的方向术语，例如上、下、顶部、底部、垂直、水平等用于相对意义，通常参考附图的元件，以描述集成电路封装或正在被描述的其他物体的各部分或层之间的关系。除非上下文明确说明，否则这种术语的使用不暗示在引力场中的任何特定方位。因此，在这个意义上使用术语“顶部”，如果顶盖部分被称为“汽车的顶部”，那么，“汽车的顶部”将持续意味着所述汽车的顶盖部分，而不管汽车是否直立或倒置在沟里。
图1是集成电路（“IC”）组件6的顶部等距视图，它是例如如图5所示的PQFN封装100的子组件。图1的IC组件6包括引脚框10，其具有顶面11和底面13。引脚框10具有模片垫部件12和多个纵向延伸的外围引线部件14、16、18、20，其被连接板部分21在引线框架的一个纵向端27整体连接到模片垫部件12。引线部件22和24从模片垫部件12横向延伸。引脚框10还包括在引脚框10的第二纵向端部29的功率条部件32。功率条部件32适于被连接到相对高的电流电源。功率条部件32具有被整体附着到连接条40的纵向延伸引线部件34、36、38。连接条40在图1-4中被示为与引脚框模片垫部件12是断开的且间隔开的关系。同样隔开的引线部件40也被示出与模片垫部件12断开。不过，应当理解，虽然未在图1中示出，但是在形成过程的这个阶段的引脚框10是具有多个整体连接的引脚框（未示出）的引线框带的一部分。引线部件的远端34、36、38、42被连接到以图1所示的关系保持这些引线部件的这个引脚框带的其他部件，直到如下所述的成型和切单后。
如图2所示，具有顶部或第一表面52和底部或第二表面54的模片50通过导电模片键合材料58被装配在引脚框模片垫部件12上。导电键合材料58可以是在回流炉中回流的焊膏，或可以包括例如可在固化炉中固化的银浆的导电粘合剂，或可以包括其他导电键合材料。在模片50的底部表面54上的电极（未示出）被连接到模片50的内部电路（未示出）。这个底部电极被导电键合材料58电连接到模片垫部件12，如图1和2中最佳所示的。如前面所指出的，模片垫部件12与外围引线部件14、16、18、20、22和24整体形成并被电连接到外围引线部件14、16、18、20、22和24。因此，外围引线部件14、16等被电连接到模片50的内部电路。
模片50具有可以是铝或铜或其他金属的顶部金属化层60。金属化层60的厚度可以在约1μm和约3μm之间。金属化层60可以通过金属电镀、气相沉积、汽化、无电喷镀或其他常见的金属沉积技术，被常规提供在模片50上。模片50的内部电路还可以被连接到顶部金属化层60。多个引线62、64、66、68中的每个具有通过常规球形键合被连接到金属化层60的第一端部70。这些球形键合通常可以间隔一定距离，例如，在约100μm和约200μm之间，但是它们还可以被间隔更远。引线62、64等的第二端部72通过常规楔形键合，以隔开的位置被附着到功率条32。另一个引线69在第一端部70被连接到在模片50的顶面52上的接触垫56。该接触垫56被定位在金属化层60的外侧。引线69的第二端部72被附着到孤立的引线部件42。引线部件42适于被连接到控制电压。功率条32被连接到外部电源，模片从外部电源接收其运行能量。大量电流可以流过连接到功率条32的小直径引线62、64、66、68。其结果是，引线62、64、66的区域中的金属化层60中的扩展电阻可能是问题，特别是当引线在传输相对高的电流时。
申请人已经发现，在顶部金属化层60中的电扩展电阻的问题可以用如图3所示的组件基本克服。在图3中，柔性，即物理可成型的导电材料层已经被施加到引线62、64、66、68被连接的区域中的金属化层60，所述导电材料层可以是银（“Ag”）环氧树脂膏层80。所述Ag环氧树脂可以作为膏剂被施加，并通过在预定温度加热预定时间段而固化。在一个实施例中，Ag环氧树脂层80从引线62、64、66、68中的每个向外横向延伸至少大约200μm，并延伸到足以覆盖连接的球形键合的例如100μm的高度和每个引线62、64、66、68的短长度。Ag环氧树脂层的组合物可以是例如大约75%的Ag。其他导电膏、环氧树脂或粘合剂，例如Ormet?260C，可以被用来取代Ag环氧树脂膏。如图4最佳所示的，Ag环氧树脂层80可以具有大致拱形的顶面81。
如图5和6所示，在图3和4中示出的IC组件8可以被装在模型层90中，并且具有平坦的顶面92、平坦的横向侧面94、平坦的纵向侧面96以及主要由模型层90形成的平坦底面98。如图3所示，各个引线部件14、16、18、20、22、24、34、36、38和42可以具有与模型层90齐平的末端。引线部件的这种末端在图5和6的14A、16A、18A、20A、22A等示出。如图6进一步所示，引脚框模片垫部件12的底面13被暴露并与PQFN100的底面98上的环绕模型化合物齐平。因此，模型层90覆盖整个模片50和引线62、64等，并只暴露引线14A、16A等的端部和模片垫部件12的底面13。
在图5和6的成型PQFN封装100的一个实施例中，如图3所示的引线62、64等可以由金、铝或铜制成，并且可以具有大约9mil（密尔）到20mil的直径。引脚框10可以由铜或铜合金构成，并且可以具有大约6mil到10mil或更厚的厚度。模型层90可以是通常主要是环氧树脂的常规转模化合物。模片50可以具有在大约1mm到大约4mm的范围内的横向和纵向尺寸，并且可以具有在大约2mil到大约12mil的厚度范围。应当理解上述尺寸和材料仅通过示例给出，不是限制。正如本领域的技术人员会明白的，具有各种其他尺寸并由其他材料构成的组成部分也可以被使用。
现将描述成型PQFN封装100及其子组件的制造方法。首先，引脚框带（未示出）被常规蚀刻或冲压以形成期望的引脚框图案/形状。典型的引脚框带可以是大约70mm宽且大约300mm长。接着，引脚框带中的每个引脚框10上的模片垫部件12可以具有通过常规丝网印刷施加的焊膏58、导电环氧树脂或其他导电键合材料。接着，通过常规的拾取和放置机器的使用，模片50被装配在施加到每个模片垫部件12的键合材料58上。接下来，所述引脚框带和被装配在其上面的模片50被移到回流炉，键合材料在所述回流炉被回流或固化，以便将模片50键合到引脚框模片垫部件12。接下来，所述组件可以被常规助焊剂清洗。在此之后，引脚框带被移到线键合站，引线62、64等在所述线键合站被键合到模片50和关联的引脚框10。线键合对于本领域中的技术人员来说是众所周知的。接下来，引脚框带被移到环氧树脂分配站，Ag环氧树脂或类似材料在环氧树脂分配站被施加到在线键合区域中的金属化层60的顶面。常规的环氧树脂分配器和常规的机器人技术可以被用于这个目的。接下来，引脚框带被移到固化炉，固化炉可用于使Ag环氧树脂在大约150℃到175℃的温度工作大约45分钟到60分钟的时间段。接下来，将引脚框带移到例如常规的转模站的常规模型站，在此处施加模型化合物90到每个引脚框带。接着，通过转模形成的成型引脚框带被去毛刺并移到电镀站，在此处用锡或其他适当的金属电镀引脚框模片垫部件12的裸露底面13和引线部件14A、16A等的端部，以防止氧化。接着，所述成型引脚框带被移到退火炉，在此处，将金属电镀在例如大约150℃到大约175℃的适当温度退火例如大约60分钟的预定时间段。接下来，成型的引脚框带可以被移到切单站（singulating station），切单锯在此处沿着产生如图5和6所示的多个成型PQFN封装100的锯线（saw street）切割成型的引脚框带。除了在顶部金属化层60和引线端部70上的Ag环氧树脂的分配以及金属化层60的固化以外，上述各个步骤中的每个可以是用于形成成型PQFN封装的常规过程步骤。
虽然用于制造成型PQFN的方法已经在上面进行描述，但是应当理解，所述用于解决在PQFN模片50的薄金属导电层60中的电扩展电阻的问题的技术也适用于其他电子器件和其他IC封装应用。例如，将Ag环氧树脂或其他适当的导电层分配在引线被键合的薄金属层顶部的相同技术也适用于下列元件和组件中的任意一种：SOIC、TSOP、TSSOP、DPAK、TO220或适用的多芯片模块，以及电扩展电阻会是问题的任何其他元件或组件。
从上述中应当明白，将模片连接到外部电子电路的一种方法可以包括如图7所示的步骤112，将多个引线的第一端部键合到模片的第一面上的顶部金属化层，112。所述方法可以进一步包括，如114所示的，用柔性导电材料层覆盖多个引线的第一端部和金属化层的至少一部分。
虽然本文描述了用于消除模片的薄金属化层中的扩展电阻问题的特定结构和方法，但是在阅读本公开后，各种替代结构和方法对于本领域中的技术人员来说是显而易见的。权利要求意图被广义解释为覆盖除了由现有技术限制的范围以外的全部这种可替代结构和方法。

Claims (20)

1.一种集成电路组件即IC组件，其包括：
IC模片，其具有在其第一表面上的金属化层；
具有第一端部和第二端部的多个引线，所述第一端部被键合到所述顶部金属化层；以及
被附着到所述顶部金属化层并覆盖所述引线的所述第一端部的导电层。
2.根据权利要求1所述的IC组件，其进一步包括引脚框，所述引脚框包括模片垫部件和多个引线部件；所述IC模片具有与所述第一表面相对的第二表面，所述第二表面被装配在所述模片垫部件上，所述多个引线的所述第二端部被键合到所述多个引线部件的至少一个。
3.根据权利要求2所述的IC组件，其进一步包括覆盖所述模片和所述引线以及所述引脚框的一部分的模型层。
4.根据权利要求1所述的IC组件，其中所述引脚框包括铜引脚框。
5.根据权利要求1所述的IC组件，其中所述金属化层包括银金属化层和铝金属化层中的一种。
6.根据权利要求1所述的IC组件，其中所述金属化层包括少于约3μm的厚度。
7.根据权利要求1所述的IC组件，其中所述键合线包括铜键合线、银键合线和铝键合线中的一种。
8.根据权利要求1所述的IC组件，其中所述键合线包括少于约20mil的直径。
9.根据权利要求1所述的IC组件，其中所述引脚框包括在大约6mil和大约10mil之间的厚度。
10.根据权利要求1所述的IC组件，其中所述导电层包括银环氧树脂层。
11.根据权利要求1所述的IC组件，其中所述IC模片组件是PQFN封装，以及所述多个引线部件包括被装配在所述引脚框的功率条部件上的多个功率引线部件，以及所述引线的所述第二端部被电连接到所述多个功率引线部件。
12.根据权利要求11所述的IC组件，其中所述导电层包括银环氧树脂层。
13.一种将集成电路模片即IC模片附着到外部电路的方法，其包括：
将多个引线的第一端部键合到在所述IC模片的顶侧上的顶部金属化层；以及
用导电材料层覆盖所述多个引线的第一端部和所述金属化层的至少一部分。
14.根据权利要求13所述的方法，其进一步包括将所述引线的第二端部键合到引脚框的多个引线部件。
15.根据权利要求14所述的方法，其进一步包括将所述IC模片的底侧附着到所述引脚框的模片垫部件。
16.根据权利要求15所述的方法，其进一步包括用模型材料层覆盖所述IC模片和所述键合线以及所述引脚框的一部分。
17.根据权利要求16所述的方法，其中所述用模型材料层覆盖所述IC模片和所述键合线以及所述引脚框的一部分包括通过所述模型层暴露所述多个引线部件的端部和所述模片垫部件的底面。
18.根据权利要求13所述的方法，其中所述用导电材料层覆盖所述多个引线的第一端部和所述金属化层的至少一部分包括用银环氧树脂层覆盖所述多个引线的第一端部和所述金属化层的至少一部分。
19.一种功率四方扁平无引线封装即PQFN封装，其包括：
引脚框，所述引脚框包括模片垫部件和与所述模片垫部件整体形成的至少一个引线部件；
集模电路模片即IC模片，其具有底面和与所述底面相对的顶面，所述IC模片的所述底面被装配在所述模片垫部件上；所述IC模片的所述顶面具有顶部金属化层；
多个引线，所述多个引线中的每个具有第一端部和第二端部，所述第一端部被球形键合到所述顶部金属化层；所述第二端部被楔形键合到所述至少一个引线部件；
导电层，其被附着到所述顶部金属化层并覆盖所述引线的所述第一端部；以及
模型材料层，其覆盖所述IC模片和所述引线以及所述引脚框的一部分，以及暴露所述至少一个引线部件的端部和所述模片垫部件的底面。
20.根据权利要求19所述的PQFN封装，其中所述导电层是银环氧树脂层。
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