CN103958520B - 具有半导体特性的化合物及相关组合物和装置 - Google Patents

具有半导体特性的化合物及相关组合物和装置 Download PDF

Info

Publication number
CN103958520B
CN103958520B CN201280052522.5A CN201280052522A CN103958520B CN 103958520 B CN103958520 B CN 103958520B CN 201280052522 A CN201280052522 A CN 201280052522A CN 103958520 B CN103958520 B CN 103958520B
Authority
CN
China
Prior art keywords
compounds
mmol
organic
straight chain
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280052522.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN103958520A (zh
Inventor
H·乌斯塔
达米恩·布迪涅
J·奎因
A·菲奇提
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Feilisi Co Ltd
Original Assignee
POLYERA CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by POLYERA CORP filed Critical POLYERA CORP
Publication of CN103958520A publication Critical patent/CN103958520A/zh
Application granted granted Critical
Publication of CN103958520B publication Critical patent/CN103958520B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D493/00Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/30Organic light-emitting transistors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN201280052522.5A 2011-09-12 2012-09-10 具有半导体特性的化合物及相关组合物和装置 Active CN103958520B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161533785P 2011-09-12 2011-09-12
US61/533,785 2011-09-12
PCT/US2012/054502 WO2013039842A1 (en) 2011-09-12 2012-09-10 Compounds having semiconducting properties and related compositions and devices

Publications (2)

Publication Number Publication Date
CN103958520A CN103958520A (zh) 2014-07-30
CN103958520B true CN103958520B (zh) 2017-03-22

Family

ID=47116279

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280052522.5A Active CN103958520B (zh) 2011-09-12 2012-09-10 具有半导体特性的化合物及相关组合物和装置

Country Status (6)

Country Link
US (2) US20130062598A1 (https=)
EP (1) EP2755978A1 (https=)
JP (1) JP6021922B2 (https=)
KR (1) KR20140090979A (https=)
CN (1) CN103958520B (https=)
WO (1) WO2013039842A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9780315B2 (en) 2012-12-03 2017-10-03 Basf Se Heteroacene compounds for organic electronics
CN104956508B (zh) * 2013-01-22 2017-07-21 日本化药株式会社 溶液工艺用有机半导体材料和有机半导体设备
CN105659310B (zh) 2013-08-13 2021-02-26 飞利斯有限公司 电子显示区域的优化
WO2015031426A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Flexible display and detection of flex state
WO2015031501A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Attachable device having a flexible electronic component
WO2015038684A1 (en) 2013-09-10 2015-03-19 Polyera Corporation Attachable article with signaling, split display and messaging features
KR20160103083A (ko) 2013-12-24 2016-08-31 폴리에라 코퍼레이션 탈부착형 2차원 플렉서블 전자 기기용 지지 구조물
WO2015100224A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Flexible electronic display with user interface based on sensed movements
EP3087559B1 (en) 2013-12-24 2021-05-05 Flexterra, Inc. Support structures for a flexible electronic component
EP3087560B9 (en) 2013-12-24 2021-08-11 Flexterra, Inc. Support structures for a flexible electronic component
WO2015120025A1 (en) 2014-02-07 2015-08-13 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
US20150227245A1 (en) 2014-02-10 2015-08-13 Polyera Corporation Attachable Device with Flexible Electronic Display Orientation Detection
JP6247560B2 (ja) * 2014-02-20 2017-12-13 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015184045A2 (en) 2014-05-28 2015-12-03 Polyera Corporation Device with flexible electronic components on multiple surfaces
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
JP2016001659A (ja) * 2014-06-11 2016-01-07 株式会社東海理化電機製作所 有機半導体材料
WO2016009890A1 (ja) 2014-07-18 2016-01-21 富士フイルム株式会社 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
CN111146352B (zh) 2014-07-24 2022-10-21 飞利斯有限公司 有机电致发光晶体管
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016138356A1 (en) 2015-02-26 2016-09-01 Polyera Corporation Attachable device having a flexible electronic component
US20180062087A1 (en) 2015-03-23 2018-03-01 Nippon Kayaku Kabushiki Kaisha Organic Compound, Organic Semiconductor Material, Organic Thin Film And Method For Producing The Same, Organic Semiconductor Composition, And Organic Semiconductor Device
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
EP3425687B1 (en) * 2016-02-29 2021-09-29 National Institute of Advanced Industrial Science and Technology Organic semiconductor composition, organic thin film comprising same, and use thereof
JP6526585B2 (ja) * 2016-02-29 2019-06-05 日本化薬株式会社 縮合多環芳香族化合物及びその用途
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ
KR102553881B1 (ko) * 2018-06-01 2023-07-07 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2098527A1 (en) * 2006-10-25 2009-09-09 Hiroshima University Novel fused-ring aromatic compound, process for producing the same, and use thereof
CN101529609A (zh) * 2006-10-20 2009-09-09 日本化药株式会社 场效应晶体管
JP2009283786A (ja) * 2008-05-23 2009-12-03 Hiroshima Univ 有機半導体組成物
JP2009302328A (ja) * 2008-06-13 2009-12-24 Nippon Kayaku Co Ltd 有機トランジスタ、およびこれが用いられた有機半導体素子
WO2010098372A1 (ja) * 2009-02-27 2010-09-02 国立大学法人広島大学 電界効果トランジスタ
WO2011004869A1 (ja) * 2009-07-10 2011-01-13 住友化学株式会社 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス
US20110024731A1 (en) * 2005-01-19 2011-02-03 National University Of Corp. Hiroshima University Novel condensed polycyclic aromatic compound and use thereof
CN102007131A (zh) * 2008-04-17 2011-04-06 株式会社理光 [1]苯并噻吩并[3,2-b][1]苯并噻吩化合物及其制法、和用其的有机电子器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1792893A4 (en) * 2004-08-31 2007-11-21 Idemitsu Kosan Co AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THIS
US7605394B2 (en) 2004-12-23 2009-10-20 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
WO2007075748A2 (en) 2005-12-20 2007-07-05 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
KR20080100982A (ko) 2007-05-15 2008-11-21 삼성전자주식회사 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자
JP5101939B2 (ja) * 2007-07-12 2012-12-19 山本化成株式会社 有機トランジスタ
JP5481850B2 (ja) * 2008-01-23 2014-04-23 東ソー株式会社 ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法
CN102137831A (zh) * 2008-08-29 2011-07-27 出光兴产株式会社 有机薄膜晶体管用化合物和使用其的有机薄膜晶体管
JP5655301B2 (ja) * 2009-12-22 2015-01-21 東ソー株式会社 有機半導体材料
US8643001B2 (en) 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110024731A1 (en) * 2005-01-19 2011-02-03 National University Of Corp. Hiroshima University Novel condensed polycyclic aromatic compound and use thereof
CN101529609A (zh) * 2006-10-20 2009-09-09 日本化药株式会社 场效应晶体管
EP2098527A1 (en) * 2006-10-25 2009-09-09 Hiroshima University Novel fused-ring aromatic compound, process for producing the same, and use thereof
CN102007131A (zh) * 2008-04-17 2011-04-06 株式会社理光 [1]苯并噻吩并[3,2-b][1]苯并噻吩化合物及其制法、和用其的有机电子器件
JP2009283786A (ja) * 2008-05-23 2009-12-03 Hiroshima Univ 有機半導体組成物
JP2009302328A (ja) * 2008-06-13 2009-12-24 Nippon Kayaku Co Ltd 有機トランジスタ、およびこれが用いられた有機半導体素子
WO2010098372A1 (ja) * 2009-02-27 2010-09-02 国立大学法人広島大学 電界効果トランジスタ
WO2011004869A1 (ja) * 2009-07-10 2011-01-13 住友化学株式会社 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Polycyclic aromatic hydrocarbons.Part XVII.Completion of the Synthesis of the Twelve Monomethyl-1:2-benzanthracenes;J.W.Cook,et al;《Journal of the chemical society(Resumed)》;19381231;第505-513页 *

Also Published As

Publication number Publication date
CN103958520A (zh) 2014-07-30
US20160351832A1 (en) 2016-12-01
JP6021922B2 (ja) 2016-11-09
KR20140090979A (ko) 2014-07-18
JP2014531435A (ja) 2014-11-27
EP2755978A1 (en) 2014-07-23
US20130062598A1 (en) 2013-03-14
WO2013039842A1 (en) 2013-03-21
US9911927B2 (en) 2018-03-06

Similar Documents

Publication Publication Date Title
CN103958520B (zh) 具有半导体特性的化合物及相关组合物和装置
CN102066373B (zh) 半导体材料及其制备方法和用途
US8022214B2 (en) Organic semiconductor materials and precursors thereof
CN101952988B (zh) 苝半导体及其制备方法和用途
CN105102462B (zh) 含有氧族元素的有机化合物、其制造方法以及用途
US8710225B2 (en) Thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds and their use as n-type semiconductors
JP5840197B2 (ja) 有機電界効果トランジスタ及び有機半導体材料
CN103635505B (zh) 二噻吩并邻苯二甲酰亚胺半导体聚合物
US9067886B2 (en) Compounds having semiconducting properties and related compositions and devices
US9312501B2 (en) Semiconducting compounds and optoelectronic devices incorporating same
US8598575B2 (en) Semiconducting compounds and related compositions and devices
US8513445B2 (en) Polycyclic aromatic molecular semiconductors and related compositions and devices
US9812645B2 (en) Perylene-based semiconductors
US8993711B2 (en) Semiconducting polymers and optoelectronic devices incorporating same
TWI542591B (zh) 四氮雜靴二蒽化合物及其作為n-型半導體之用途
JP2012184196A (ja) 含ピロールヘテロアセン化合物、該化合物の製造方法、該化合物を含む薄膜及び該薄膜を含む有機半導体デバイス
KR101072477B1 (ko) 고분자 곁사슬에 알킬티오펜 기가 치환된 유기 반도체 화합물 및 이를 이용한 유기 박막 트랜지스터
WO2011071017A1 (ja) ジアザボロール化合物、およびそれを含有した電界効果トランジスタ
JP7493228B2 (ja) 有機半導体材料および有機薄膜トランジスタ
Li et al. Structurally tailored thiophene-based hybrid materials for thin-film and single-crystal transistors: Synthesis, photophysics and carrier-transport properties
JPWO2008108442A1 (ja) 新規ポルフィラジン誘導体およびその中間体、新規ポルフィラジン誘導体およびその中間体の製造方法、並びにその利用
TWI519534B (zh) 經氰硫基或異氰硫基取代之萘二醯亞胺化合物及其作為n-型半導體之用途
WO2012111533A1 (ja) 有機トランジスタ用化合物
Yang Development of π-Extended Heteroacene-based Materials toward Application in Organic Field-Effect Transistors

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20170221

Address after: Illinois

Applicant after: Feilisi Co. Ltd.

Address before: Illinois

Applicant before: Polyera Corp.

C14 Grant of patent or utility model
GR01 Patent grant