CN103956408A - Method for preparing ridge type optical waveguide through standard CMOS process - Google Patents
Method for preparing ridge type optical waveguide through standard CMOS process Download PDFInfo
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- CN103956408A CN103956408A CN201410191727.2A CN201410191727A CN103956408A CN 103956408 A CN103956408 A CN 103956408A CN 201410191727 A CN201410191727 A CN 201410191727A CN 103956408 A CN103956408 A CN 103956408A
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- optical waveguide
- cmos process
- standard cmos
- substrate
- ridge optical
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing a ridge type optical waveguide through a standard CMOS process. The method comprises the following steps that (1) a substrate is taken to serve as a core layer of the ridge type optical waveguide; (2) two local oxide isolation layers are prepared on the substrate, and separated for a preset distance, and cladding on the two sides of the ridge type optical waveguide is formed; (3) cladding is prepared between the two local oxide isolation layers and on the local oxide isolation layers, and upper cladding of the ridge type optical waveguide is formed; (4) the substrate is thinned, and preparation is completed. According to the method, manufacturing is completely carried out through the standard CMOS process, and monolithic integration between the optical waveguide and a CMOS circuit can be achieved.
Description
Technical field
The present invention relates to a kind of fiber waveguide, specially refer to the method that adopts standard CMOS process to prepare ridge optical waveguide.
Background technology
Nearly half a century, along with the development of integrated circuit, silica-base material and device technology are very ripe, and along with constantly the dwindling of technology characteristics size, and the integrated level of integrated circuit is also always according to the Moore's Law development that shoots ahead.What the integrated level that chip is higher was brought is not only that number of transistors object increases, the lifting of chip functions and processing speed especially.Yet, along with characteristic size constantly dwindle the continuous increase with integrated level, the limitation of microelectronic technique also becomes clear day by day.Although time delay and the power consumption of single transistor are more and more less, the time delay of interconnection line and power consumption are increasing and occupy gradually leading.In current processor, the power consumption that electrical interconnection causes has accounted for the more than 80% of whole chip total power consumption.Therefore, can see that electrical interconnection under deep-submicron characteristic size postpones and the bottleneck of power consumption, seriously restrict the further raising of chip performance.So people have invested the interconnection of sheet glazing sight.Light interconnection can solve the intrinsic bottleneck of electrical interconnection, has the advantages such as high bandwidth, anti-interference and low-power consumption, can be used for clock signal transmission in System on Chip/SoC, solves phase mutual interference and the clock skew problem of signal.
Conventionally, on sheet, optical interconnection link is comprised of optical coupler, electrooptic modulator, optical filter and photodetector, and fiber waveguide, as the transmission medium of light signal, is the elementary cell that forms these devices.Fiber waveguide is comprised of the sandwich layer of high index of refraction and the covering of low-refraction, because the refractive index of sandwich layer is high, utilizes the total reflection phenomenon of light, light signal can be limited in to waveguide core layer and propagate.Silica-based fiber waveguide is generally produced on silicon-on-insulator (SOI) substrate, manufacture craft and CMOS process compatible, but need thicker top layer silicon (220nm left and right) and oxygen buried layer (2 μ m left and right) owing to making the selected SOI substrate of fiber waveguide, different from the substrate of CMOS integrated circuit, so cannot directly realize fiber waveguide device and cmos circuit monolithic is integrated.For head it off, common way is to change the substrate of CMOS integrated circuit, or adopts the techniques such as bonding chip, flip chip bonding, mixes integrated optical wave guide device and CMOS integrated circuit.Although can realize the integrated of light and electricity by these methods, introduce new problem.The substrate of changing CMOS integrated circuit can reduce the performance of circuit, also can affect the stability of standard CMOS process; Mix integrated method and can improve process complexity, increase process costs.Therefore,, in order to solve fiber waveguide device and the single chip integrated problem of CMOS integrated circuit, be necessary to propose the fiber waveguide of new standard CMOS process.
Summary of the invention
The object of the invention is to, a kind of method that adopts standard CMOS process to prepare ridge optical waveguide is provided, fiber waveguide and cmos circuit are on same silicon substrate, it is made and adopts standard CMOS process completely, can realize fiber waveguide device and cmos circuit monolithic is integrated, be expected in optical interconnection network, obtain important application on sheet.
A kind of method that adopts standard CMOS process to prepare ridge optical waveguide of the present invention, comprises the steps:
Step 1: get a substrate, as the sandwich layer of ridge optical waveguide;
Step 2: the preset distance of being separated by substrate is prepared two carrying out local oxide isolation layers, the both sides covering of formation ridge optical waveguide;
Step 3: preparing a covering between two carrying out local oxide isolation layers and on two carrying out local oxide isolation layers, forming the top covering of ridge optical waveguide;
Step 4: by substrate thinning, complete preparation.
The invention has the beneficial effects as follows, fiber waveguide and cmos circuit are on same silicon substrate, and its making adopts standard CMOS process completely, can realize fiber waveguide device and cmos circuit monolithic is integrated, are expected in optical interconnection network, obtain important application on sheet.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, below in conjunction with embodiment and accompanying drawing, describe particular content of the present invention in detail, wherein:
Fig. 1 is section of structure of the present invention;
Fig. 2 is the ridge optical waveguide profile of specific embodiments of the invention;
Fig. 3 is the ridge optical waveguide section distribution of light intensity distribution map of specific embodiments of the invention.
Embodiment
Refer to shown in Fig. 1 Fig. 2, the invention provides a kind of method that adopts standard CMOS process to prepare ridge optical waveguide, comprise the steps:
Step 1: get a substrate 11, as the sandwich layer of ridge optical waveguide, the material of described substrate 11 is silicon.This substrate 11 adopts standard CMOS process substrate, and doping is generally p-type 10
16cm
-3, absorption coefficient is 0.06cm
-1, can cause the loss of 0.26dB/cm, for communicating by letter in chip, because distance is shorter, its loss can be ignored.
Step 2: the preset distance of being separated by substrate 11 is prepared two carrying out local oxide isolation layers 12, form the covering of ridge optical waveguide, described carrying out local oxide isolation layer 12 is to form by the local oxidation of silicon technology in standard CMOS process, and the material of described carrying out local oxide isolation layer 12 is silicon dioxide.In microelectronic integrated circuit, carrying out local oxide isolation layer 12, for electrical isolation is carried out in active area, is used for forming the both sides covering of fiber waveguide in the present invention.In carrying out local oxide isolation layer 12 and CMOS integrated circuit, for the carrying out local oxide isolation layer of active area isolation, make, technique is identical simultaneously.Its degree of depth is according to the difference of CMOS technique and different, for example, more than generally can reaching 600 nanometers for its degree of depth of technique of 1 micron of live width, is enough to form optical waveguide structure.Its width is defined by designer, and under the technique of 1 micron of live width, its width minimum can be defined as 1 micron.
Step 3: preparing a covering 13 between two carrying out local oxide isolation layers 12 and on two carrying out local oxide isolation layers 12, the material of described covering 13 is silicon dioxide.Covering 13 is prepared with the dielectric layer in standard CMOS process simultaneously herein, dielectric layer in standard CMOS process is for each layer of interconnection line of microelectronic integrated circuit being carried out to electrical isolation and upper strata metal being played a supportive role, be used for forming in the present invention the top covering of ridge optical waveguide, its thickness can reach several micron dimensions, be enough to form optical waveguide structure, and can play the effect of protection fiber waveguide;
Step 4: by substrate 11 attenuates, the method for described substrate 11 attenuates is: adopt the method for reactive ion etching, inductively coupled plasma etching, wet etching or chemico-mechanical polishing, described substrate 11 is thinned to 1 micron-5 microns, completes preparation.Generally held standard CMOS technique Si-Substrate Thickness is hundreds of micron, directly usings its sandwich layer as fiber waveguide can not realize the single mode propagation of light, in order to meet heavy in section ridge optical waveguide single mode condition, need to carry out reduction processing to silicon substrate.Substrate thinning technique is a kind of common technique in cmos image sensor preparation, for increasing the light transmittance of cmos image sensor chip substrate, does not affect the preparation of integrated circuit.Utilize in the present invention substrate thinning technique substrate 11 to be thinned to the thickness of design, using air or by other media of thin film growth process deposit as the under-clad layer of ridge optical waveguide, form optical waveguide structure.
Fig. 2 represents to adopt standard CMOS process to prepare the section of structure of the specific embodiment of ridge optical waveguide.Wherein ridge optical waveguide and the preparation of CMOS integrated circuit are on same substrate, 21 is designed fiber waveguide thickness, 22 is that the ridge of fiber waveguide is wide, and 23 is the thickness of silicon carrying out local oxide isolation layer, and 24 is beak (Bird ' s Beak) length of silicon carrying out local oxide isolation layer.Take 1 micrometre CMOS process as example, and silicon carrying out local oxide isolation layer thickness is 600 nanometers, and beak length is 300 nanometers, and design fiber waveguide width is 4 microns, and the substrate thickness after attenuate is 2 microns, and fiber waveguide thickness is 2.3 microns.Top covering is silicon dioxide and silicon carrying out local oxide isolation layer, and its refractive index is about 1.45 (wavelength 1.55 microns time); Under-clad layer is air, and refractive index is 1; Sandwich layer is silicon, and refractive index is about 3.47 (wavelength 1.55 microns time).As calculated, under this parameter, the effective refractive index in ridge optical waveguide core district is about 3.4596, and dull and stereotyped district, both sides effective refractive index is 3.4551, enough light signal is limited in to ridge waveguide core district.The loss that emulation obtains fiber waveguide is 1.1 * 10
-4dB/cm, can ignore.In waveguide, distribution of light intensity distributes as shown in Figure 3, can see that the ridge optical waveguide of design meets single mode propagation condition.
The present invention proposes a kind of method that adopts standard CMOS process to prepare ridge optical waveguide, its all process layers all adopt standard CMOS process to make, can to realize monolithic integrated with CMOS integrated circuit, be expected in optical interconnection network, produce material impact on sheet.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect have been carried out to more detailed specific description; institute is understood that; above-described is only specific embodiments of the invention; be not limited to the present invention; all within the scope of spirit of the present invention, thought and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. adopt standard CMOS process to prepare a method for ridge optical waveguide, comprise the steps:
Step 1: get a substrate, as the sandwich layer of ridge optical waveguide;
Step 2: the preset distance of being separated by substrate is prepared two carrying out local oxide isolation layers, the both sides covering of formation ridge optical waveguide;
Step 3: preparing a covering between two carrying out local oxide isolation layers and on two carrying out local oxide isolation layers, forming the top covering of ridge optical waveguide;
Step 4: by substrate thinning, complete preparation.
2. employing standard CMOS process according to claim 1 is prepared the method for ridge optical waveguide, and the material of wherein said substrate is silicon.
3. employing standard CMOS process according to claim 1 is prepared the method for ridge optical waveguide, and wherein said carrying out local oxide isolation layer is to form by the selective oxidation technology in standard CMOS process.
4. employing standard CMOS process according to claim 1 is prepared the method for ridge optical waveguide, and the method for wherein said substrate thinning is: the method that adopts reactive ion etching, inductively coupled plasma etching, wet etching or chemico-mechanical polishing.
5. employing standard CMOS process according to claim 4 is prepared the method for ridge optical waveguide, wherein said substrate thinning to 1 microns-5 microns.
6. employing standard CMOS process according to claim 1 is prepared the method for ridge optical waveguide, and the material of wherein said carrying out local oxide isolation layer is silicon dioxide.
7. employing standard CMOS process according to claim 1 is prepared the method for ridge optical waveguide, and the material of wherein said covering is silicon dioxide.
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|---|---|---|---|
| CN201410191727.2A CN103956408B (en) | 2014-05-08 | 2014-05-08 | The method that ridge optical waveguide is prepared using standard CMOS process |
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| CN201410191727.2A CN103956408B (en) | 2014-05-08 | 2014-05-08 | The method that ridge optical waveguide is prepared using standard CMOS process |
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| CN103956408A true CN103956408A (en) | 2014-07-30 |
| CN103956408B CN103956408B (en) | 2017-03-01 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682455A (en) * | 1996-02-29 | 1997-10-28 | Northern Telecom Limited | Semiconductor optical waveguide |
| US6993236B1 (en) * | 2002-06-24 | 2006-01-31 | Luxtera, Inc. | Polysilicon and silicon dioxide light scatterers for silicon waveguides on five layer substrates |
| CN101082687A (en) * | 2007-07-09 | 2007-12-05 | 陈铭义 | Optical waveguides on piece total compatible with standard CMOS process and method for making same |
-
2014
- 2014-05-08 CN CN201410191727.2A patent/CN103956408B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682455A (en) * | 1996-02-29 | 1997-10-28 | Northern Telecom Limited | Semiconductor optical waveguide |
| US6993236B1 (en) * | 2002-06-24 | 2006-01-31 | Luxtera, Inc. | Polysilicon and silicon dioxide light scatterers for silicon waveguides on five layer substrates |
| CN101082687A (en) * | 2007-07-09 | 2007-12-05 | 陈铭义 | Optical waveguides on piece total compatible with standard CMOS process and method for making same |
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