CN107765375A - Chip fiber perpendicular coupled structure based on double-layer grating - Google Patents
Chip fiber perpendicular coupled structure based on double-layer grating Download PDFInfo
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- CN107765375A CN107765375A CN201711166105.4A CN201711166105A CN107765375A CN 107765375 A CN107765375 A CN 107765375A CN 201711166105 A CN201711166105 A CN 201711166105A CN 107765375 A CN107765375 A CN 107765375A
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- 239000000835 fiber Substances 0.000 title claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 abstract description 27
- 238000010168 coupling process Methods 0.000 abstract description 27
- 238000005859 coupling reaction Methods 0.000 abstract description 27
- 239000013307 optical fiber Substances 0.000 abstract description 9
- 238000010276 construction Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 238000004891 communication Methods 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of chip fiber perpendicular coupled structure based on double-layer grating.The coupled structure includes substrate, transmission medium layer, lower floor's grating, extension dielectric layer and upper strata grating, wherein, upper strata grating and lower floor's grating make it that 0 order diffraction intensity of incident light is minimum, and 90 degree of deviation occurs for incident light direction of propagation after coupled structure.The present invention realizes the efficient coupling of vertical incidence between fiber chip using double-layer grating structure, and such a design structure compares existing coupling grating structure, has the advantages of complete vertical incidence, simple in construction, easy to process, efficiency is higher.Utilize the structure of the present invention, it is possible to achieve 48% coupling efficiency between communication band (1300 1700nm) optical fiber SOI waveguides.
Description
Technical field
The present invention relates to a kind of double-layer grating structure for realizing chip-fiber perpendicular coupling.
Background technology
The development trend of chip is the photoelectricity hybrid integrated of electrical-optical-electrical, micro-optoelectronic integrated chip be by integrated circuit with
Photonic integrated device is simultaneously integrated, and realizes the optoelectronic intagration system with real value.In light network, light exchange, optical signal
Processing etc. has great importance and is widely applied prospect.With the development of silicon based opto-electronicses electronic technology, silicon compared with
It is less and less that big refractive index makees device, can be integrated on the same chip by more optoelectronic function devices.
Because current silicon substrate light source is difficult to realize, general light source selects external laser.Therefore need a coupler will
The light source couples of external laser enter in chip of light waveguide.Traditional most easy method is that optical fiber is straight with nano optical wave guide
Docking is connect, but due to about more than ten microns of the size of optical fiber, and waveguide is only hundreds of nanometers, there is serious between the two
Pattern mismatch problem, cause coupling loss very big, coupling efficiency is relatively low, therefore vertical coupled using the grating of grating coupler
Method has obtained increasing concern.Grating coupled advantage is that grating coupler is to realize waveguide table using the diffraction of light
Face optical coupling, can effectively solve optical fiber and the unmatched problem of waveguide mode, coupling efficiency is high and is easily integrated.
Using grating coupled principle changed using the refractive index cycle of grating, its incident light and diffraction light is met cloth
Glug condition, so as to realize efficient coupling.In order to improve the efficiency of coupling, it is necessary to which the secondary Prague for reducing grating as far as possible is anti-
Penetrate, backwards to and downward intensity in transmission.2003, Hisao KIKUTA delivered entitled《Optical Elements with
Subwavelength Structured Surfaces》Article (OPTICAL REVIEW Vol.10, No.2 (2003) 63-
73) structure (mainly dutycycle) of grating and the relation of grating effective refractive index, are analyzed using EFFECTIVE MEDIUM THEORY, it is indicated that
The dutycycle of regulation grating can be such that the effective refractive index of grating changes within the scope of one.There is research to indicate grating knot quickly
Structure can not only have the periodic modulation of refractive index in one direction, can also there is periodic modulation in the two directions
(SWGS)[Daniel Benedikovic,Pavel Cheben,“Subwavelength index engineered
surface grating coupler with sub-decibel efficiency for 220-nm silicon-on-
insulator waveguide,”Opt.Express 23,22628-22635(2015)].This optical grating construction is due to being individual layer
And be that light engraving loses, so with it is easy to process the characteristics of, but it in order to reduce secondary Bragg reflection need to make into
Penetrating optical fiber has a small inclination angle, so being industrially unfavorable for package application.
Another scheme be using chirp grating and perfect Bragg reflection grating structure [A.M.J.Koonen,
Haoshuo Chen,Henrie P.A.van den Boom,Oded Raz,“Silicon Photonic Integrated
Mode Multiplexer and Demultiplexer,”,Photonics Technology Letters IEEE,
Vol.24, pp.1961-1964,2012, ISSN 1041-1135.], chirp grating can effectively improve to be produced because light field center changes
The change of raw diffraction maximum, while perfect Bragg grating can make to reflect back as far as possible backwards to ripple, so as to improve coupling effect
Rate.But the coupling efficiency of this grating is relatively low, very big waste can be caused.In order to reduce grating under conditions of vertical coupled
Secondary Bragg reflection, there is optical grating construction [Ming Dai, Leilei Ma, the Minghui Lu with two kinds of cycles
and Xiaoping Liu,“Highly efficient and perfectly vertical chip-to-fiber dual-
Layer grating coupler, " Opt.Express 23,1691-1698 (2015)], this grating rationally designs structure
Thickness so that destructive interference occurs just for two layers of reflected light so as to produce smaller secondary Bragg reflection, then by rationally setting
The structure of photometric grid can make it have directionality.The grating of this structure is had higher using the structure of two kinds of cycle dislocation
Coupling efficiency, but the structure of this dislocation has very big difficulty on micro fabrication.
From the foregoing, the efficient vertical raster of wide bandwidth has very big application, market pair in integreted phontonics industry
This grating has very big demand, and ripe CMOS integrated techniques provide condition for the processing of grating.Design at present
Vertical coupled grating structure much needs a small inclination angle incident, is not vertical incidence truly, some efficiency is inclined
Low, some efficiency is very high difficult to be produced under existing CMOS integrated techniques.
The content of the invention
For the coupled structure of research and design before, or it is that non-fully the vertical incidence of meaning or coupling efficiency are inclined
The complicated technical problem of low or processing technology is, it is necessary to which a kind of efficient, vertical incidence, simple structure of technique realizes core
Piece and extraneous communication.Therefore, the invention provides a kind of perpendicular coupling structure based on double-layer grating, solve chip-
The problem of efficient coupling of light is realized between optical fiber.
The purpose of the present invention is realized by following technical scheme：
Chip based on double-layer grating-fiber perpendicular coupled structure, it is characterised in that the coupled structure includes substrate, passed
Defeated dielectric layer, lower floor's grating, extension dielectric layer and upper strata grating, wherein, upper strata grating and lower floor's grating cause 0 grade of incident light
Diffracted intensity is minimum, and 90 degree of deviation occurs for incident light direction of propagation after the coupled structure.
Further, the center position of lower floor's grating is provided with Bragg mirror.
Further, it is provided with catoptric arrangement between substrate and the transmission medium layer.
The present invention realizes the efficient coupling of optical fiber-chip chamber vertical incidence using double-layer grating structure, compares existing
Coupling grating structure, there is the advantages of complete vertical incidence, simple in construction, easy to process, efficiency is higher：
(1) structure of the invention can be very good to make completely using existing ripe CMOS technology so that coupler
Preparation technology greatly simplifies；
(2) fiber port docks completely with optical grating construction, is very beneficial for encapsulation design, easy to use；
(3) coupling efficiency of coupled structure of the present invention is also higher, it is possible to achieve in communication band (1300-1700nm) light
48% coupling efficiency between fibre-SOI waveguides.
Brief description of the drawings
Fig. 1 is the coupled structure schematic diagram of the invention based on double-layer grating.
Fig. 2 be the present invention using temporal-difference algorithm (3dFDTD) simulation calculate transverse electromagnetic mode (TM0) from fiber coupling to
Coupling efficiency in waveguide.
Fig. 3 is that the present invention calculates transverse electromagnetic mode (TM0) from optical fiber incidence using temporal-difference algorithm (3dFDTD) simulation
Pattern conservation degree, i.e., incident pattern is propagated in the structure does not change the pattern as far as possible.
Embodiment
The coupled structure of the present invention is situated between as shown in figure 1, sequentially consisting of substrate, transmission medium, lower floor's grating, extension
Matter, upper strata grating.Diffraction occurs when incident light beam strikes are to upper strata grating, the energy of light beam is concentrated mainly on+1, -1 order diffraction light
In, deviation occurs for the direction of propagation of light, on the light beam Random Incident after diffraction to lower floor's grating so that light spreads out again
Penetrate, 90 degree of change occurs so as to the direction of propagation of final light.Because double-layer grating gradually diffraction, light is in optical fiber-chip chamber
Coupling efficiency is improved than before using the structure for customizing monochromatic light grid.
Different wavelength, different patterns incident light under, the structural parameters of grating can select so that incident light
Coupling efficiency highest.The determination of grating parameter, according to making, the intensity of 0 order diffraction is minimum to be determined in principle.Specific structure ginseng
Number can be calculated using first beginning optimized algorithm.
The double-layer grating structure of the present invention can further improve coupling efficiency, such as the center position in lower floor's grating
Design Bragg mirror, or catoptric arrangement designed between substrate and transmission medium, with reduce incident light downwards and to
The upward transmission in rear.
The light path of coupled structure of the present invention has invertibity, both can be used for light being coupled to chip from fiber perpendicular, again
It can be used for light from Chip Vertical being coupled in optical fiber.
The preparation method of the present embodiment coupled structure is：First light engraving loses one layer of optical grating construction as lower floor's grating on piece,
Its raster size matches with fiber cross-sections size；Again in one layer of medium of grating Epitaxial growth, in another light of deep etching thereon
Grid structure matches as upper strata grating, its raster size with fiber cross-sections size.The thickness of specific grating structural parameter and medium
Degree is so that coupling efficiency highest optimizes to obtain.Said structure makes light enter from fiber coupling on piece, then passes through adiabatic waveguide connector
It is coupled into light is loss-free in very small size of chip.
To be coupled as example in communication band (1300-1700nm) soi chip and 12um optical fiber, optimization is calculated
Grating parameter be：Light engraving loses lower floor's optical grating construction on silicon layer, and its screen periods is 0.5-0.7um, etching depth 80-
120nm, grating dutycycle are 0.4-0.6 or so.Etch the upper strata optical grating construction on extension silicon dioxide layer surface, its grating week
Phase is 1.2um or so, and etching depth is 0.8um-1.2um (deep etching), and grating dutycycle is 0.7-0.8.The two of extension generation
The thickness of silicon oxide layer is 3um or so.Transmission medium selects silicon.Under such a structure, it can see according in Fig. 2 dispersion map,
The present invention has higher conversion efficiency in communication band, and the coupling efficiency of basic mode reaches as high as 48%.Importantly, this hair
Bright also to have larger bandwidth, by taking -3dB as an example, bandwidth of the invention is about 65nm.Meanwhile as seen from Figure 3, basic mode exists
When being propagated in the coupled structure of the present invention, hardly change its pattern, this is that the present invention has substantially for practical value
Ask.Therefore, coupled structure of the invention can realize chip and extraneous communication well.
Claims (3)
1. the chip based on double-layer grating-fiber perpendicular coupled structure, it is characterised in that the coupled structure includes substrate, transmission
Dielectric layer, lower floor's grating, extension dielectric layer and upper strata grating, wherein, upper strata grating and lower floor's grating make it that 0 grade of incident light is spread out
Penetrate that intensity is minimum, 90 degree of deviation occurs for incident light direction of propagation after the coupled structure.
2. the chip based on double-layer grating-fiber perpendicular coupled structure according to claim 1, it is characterised in that described
The center position of lower floor's grating is provided with Bragg mirror.
3. the chip based on double-layer grating-fiber perpendicular coupled structure according to claim 1, it is characterised in that described
Catoptric arrangement is provided between substrate and transmission medium layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711166105.4A CN107765375B (en) | 2017-11-21 | 2017-11-21 | Chip based on double-layer grating-fiber perpendicular coupled structure |
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| CN201711166105.4A CN107765375B (en) | 2017-11-21 | 2017-11-21 | Chip based on double-layer grating-fiber perpendicular coupled structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230339A (en) * | 2020-10-23 | 2021-01-15 | 联合微电子中心有限责任公司 | Grating coupler and preparation method thereof |
| CN114236686A (en) * | 2021-12-21 | 2022-03-25 | 南京邮电大学 | Multi-layer multi-dimensional photon integrated chip light/light inlet/outlet structure and preparation method thereof |
| WO2022179534A1 (en) * | 2021-02-24 | 2022-09-01 | The Chinese University Of Hong Kong | High coupling efficiency blazed waveguide grating coupler |
| CN115128733A (en) * | 2022-06-24 | 2022-09-30 | 吉林大学 | Double-grating structure, manufacturing method, optical phased array and laser radar |
| CN117130095A (en) * | 2023-08-31 | 2023-11-28 | Nano科技(北京)有限公司 | Optoelectronic chip, chip stacking and packaging system and optical connection method of multi-layer chips |
| CN114236686B (en) * | 2021-12-21 | 2024-10-25 | 南京邮电大学 | Light emitting/in structure of multilayer multidimensional photon integrated chip and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3153886B2 (en) * | 1992-08-03 | 2001-04-09 | 日本板硝子株式会社 | Optical coupler |
| CN104570203A (en) * | 2013-10-25 | 2015-04-29 | 光引研创股份有限公司 | Optical device |
| US20160363728A1 (en) * | 2015-06-12 | 2016-12-15 | Pacific Biosciences Of California, Inc. | Integrated target waveguide devices and systems for optical coupling |
-
2017
- 2017-11-21 CN CN201711166105.4A patent/CN107765375B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3153886B2 (en) * | 1992-08-03 | 2001-04-09 | 日本板硝子株式会社 | Optical coupler |
| CN104570203A (en) * | 2013-10-25 | 2015-04-29 | 光引研创股份有限公司 | Optical device |
| US20160363728A1 (en) * | 2015-06-12 | 2016-12-15 | Pacific Biosciences Of California, Inc. | Integrated target waveguide devices and systems for optical coupling |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230339A (en) * | 2020-10-23 | 2021-01-15 | 联合微电子中心有限责任公司 | Grating coupler and preparation method thereof |
| WO2022179534A1 (en) * | 2021-02-24 | 2022-09-01 | The Chinese University Of Hong Kong | High coupling efficiency blazed waveguide grating coupler |
| CN114236686A (en) * | 2021-12-21 | 2022-03-25 | 南京邮电大学 | Multi-layer multi-dimensional photon integrated chip light/light inlet/outlet structure and preparation method thereof |
| CN114236686B (en) * | 2021-12-21 | 2024-10-25 | 南京邮电大学 | Light emitting/in structure of multilayer multidimensional photon integrated chip and preparation method |
| CN115128733A (en) * | 2022-06-24 | 2022-09-30 | 吉林大学 | Double-grating structure, manufacturing method, optical phased array and laser radar |
| CN115128733B (en) * | 2022-06-24 | 2023-12-08 | 吉林大学 | Double-grating structure, manufacturing method, optical phased array and laser radar |
| CN117130095A (en) * | 2023-08-31 | 2023-11-28 | Nano科技(北京)有限公司 | Optoelectronic chip, chip stacking and packaging system and optical connection method of multi-layer chips |
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| CN107765375B (en) | 2019-06-25 |
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