CN103956346B - 一种制作3d封装芯片的散热方法 - Google Patents
一种制作3d封装芯片的散热方法 Download PDFInfo
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- CN103956346B CN103956346B CN201410111082.7A CN201410111082A CN103956346B CN 103956346 B CN103956346 B CN 103956346B CN 201410111082 A CN201410111082 A CN 201410111082A CN 103956346 B CN103956346 B CN 103956346B
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- Prior art keywords
- chip
- monomer
- fluid passage
- heat dissipating
- heat
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 13
- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000012530 fluid Substances 0.000 claims abstract description 65
- 239000002826 coolant Substances 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000000178 monomer Substances 0.000 claims description 77
- 238000001816 cooling Methods 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229960000583 acetic acid Drugs 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000012362 glacial acetic acid Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000013007 heat curing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000003032 molecular docking Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410111082.7A CN103956346B (zh) | 2014-03-24 | 2014-03-24 | 一种制作3d封装芯片的散热方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410111082.7A CN103956346B (zh) | 2014-03-24 | 2014-03-24 | 一种制作3d封装芯片的散热方法 |
Publications (2)
Publication Number | Publication Date |
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CN103956346A CN103956346A (zh) | 2014-07-30 |
CN103956346B true CN103956346B (zh) | 2017-02-15 |
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CN201410111082.7A Active CN103956346B (zh) | 2014-03-24 | 2014-03-24 | 一种制作3d封装芯片的散热方法 |
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CN (1) | CN103956346B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI836706B (zh) * | 2017-09-06 | 2024-03-21 | 英商艾瑟歐托普集團有限公司 | 用於液浸冷卻的散熱器、散熱器佈置及模組 |
EP3745834A1 (en) * | 2019-05-31 | 2020-12-02 | ABB Schweiz AG | Apparatus for conducting heat |
CN113097165B (zh) * | 2021-03-31 | 2022-05-06 | 度亘激光技术(苏州)有限公司 | 一种半导体叠阵的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937907B (zh) * | 2009-06-29 | 2012-09-05 | 财团法人工业技术研究院 | 芯片堆叠封装结构及其制作方法 |
US8563365B2 (en) * | 2011-03-09 | 2013-10-22 | Georgia Tech Research Corporation | Air-gap C4 fluidic I/O interconnects and methods of fabricating same |
US20120299173A1 (en) * | 2011-05-26 | 2012-11-29 | Futurewei Technologies, Inc. | Thermally Enhanced Stacked Package and Method |
CN202394887U (zh) * | 2011-12-20 | 2012-08-22 | 日月光半导体制造股份有限公司 | 具有堆叠芯片的半导体封装结构 |
CN103378026A (zh) * | 2012-04-16 | 2013-10-30 | 北京大学 | 一种具有散热功能的三维封装方法 |
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2014
- 2014-03-24 CN CN201410111082.7A patent/CN103956346B/zh active Active
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Publication number | Publication date |
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CN103956346A (zh) | 2014-07-30 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Heat dissipation method for manufacturing 3D packaging chip Effective date of registration: 20191212 Granted publication date: 20170215 Pledgee: Science and Technology Branch of Torch Development Zone of Zhongshan Rural Commercial Bank Co.,Ltd. Pledgor: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Registration number: Y2019980001020 |
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Date of cancellation: 20210303 Granted publication date: 20170215 Pledgee: Science and Technology Branch of Torch Development Zone of Zhongshan Rural Commercial Bank Co.,Ltd. Pledgor: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Registration number: Y2019980001020 |
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Effective date of registration: 20240408 Address after: 528400 No. 3 Mingzhu Road, Torch Development Zone, Zhongshan City, Guangdong Province Patentee after: Zhongshan Xinnuo Microelectronics Co.,Ltd. Country or region after: China Address before: 528400 No. 3 Mingzhu Road, Torch Development Zone, Zhongshan City, Guangdong Province Patentee before: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Country or region before: China |
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