CN103938211B - A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process - Google Patents

A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process Download PDF

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CN103938211B
CN103938211B CN201410191897.0A CN201410191897A CN103938211B CN 103938211 B CN103938211 B CN 103938211B CN 201410191897 A CN201410191897 A CN 201410191897A CN 103938211 B CN103938211 B CN 103938211B
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carbon
workpiece
dlc
thin film
diamond
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CN103938211A (en
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冷永祥
张腾飞
孙鸿
黄楠
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Southwest Jiaotong University
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Abstract

The invention discloses the deposition process of a kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film, it alternately adopts vacuum cathode arc source deposition process and plasma enhanced chemical vapor deposition method in the hydrogeneous and not hydrogeneous diamond like carbon film of surface of the work alternating deposit, the method can surface of the work deposits micron order thickness, multilayer diamond-like (DLC) thin film that high rigidity, low stress, excellent bonding performance, good corrosion resistance, stability are strong; Thus being greatly improved the time that workpiece is on active service under liquid medium environment.

Description

A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process
Technical field
The invention belongs to field of surface engineering technique, especially belong to the deposition process of a kind of multilayer diamond-like (DLC) thin film.
Background technology
Diamond like carbon film (DLC) has high rigidity, low-friction coefficient, high abrasion and chemically inert feature. The abrasion resistance properties of parts can be improved on key components and parts surface depositing diamond-like thin film (DLC). According to whether hydrogeneous, diamond like carbon film can be divided into hydrogeneous DLC film and the big class of not hydrogeneous DLC film two. Hydrogeneous DLC film generally has relatively low stress, can the bigger thin film of formation of deposits thickness, but compared with not hydrogeneous DLC film, its hardness, intensity are relatively low, under liquid medium environment, coefficient of friction is relatively big, poor [[1] M.Suzuki of wearability, T.Ohana, A.Tanaka.TribologicalpropertiesofDLCfilmswithdifferenthy drogencontentsinwaterenvironment, Diamond&RelatedMaterials, 2004, (13): 2,216 2220]. Compared with hydrogeneous DLC film, not hydrogeneous DLC film hardness, intensity are high, in liquid medium environment, coefficient of friction is low, wearability better [[2] thank to Fructus Mume. the Advances in Studies of Tribological Properties of diamond like carbon film, sufacing, 2011, (40) 3:90-97]. But relatively big [[3] WeiDai that is free from hydrogen DLC film internal stress, GuosongWu, AiyingWang.Preparation, characterizationandpropertiesofCr-incorporatedDLCfilmson magnesiumalloy, Diamond&RelatedMaterials, 2010, (19): 1,307 1315], limit the thickness of thin film, it is difficult to the thin film of formation of deposits micron order thickness, and this heavily stressed not hydrogeneous DLC film is in long service process, due to Stress Release, it is possible to can cause film separation; When being on active service in liquid medium environment, owing in thin film, the existence of stress may aggravate stress corrosion simultaneously, cause film separation, reduce the life-span of thin film.
In order to reduce the stress of not hydrogeneous diamond like carbon film, existing low-stress multi-layer diamond like carbon film [[4] J.B.Cai adopting plural layers deposition technique to prepare, etc.Microstructure, mechanicalandtribologicalpropertiesofa-C/a-C:Tinanomulti layerfilm, Surface&CoatingsTechnology, 2013, (232): 403 411;[5] Ch.Schwarz, etc.InvestigationonwearandadhesionofgradedSi/SiC/DLCcoat ingsdepositedbyplasma-enhanced-CVD, Diamond&RelatedMaterials, 2008, (17): 1,685 1688, [6] S.Gayathri, etc.SpectroscopicstudiesonDLC/TM (Cr, Ag, Ti, Ni) multilayers, MaterialsResearchBulletin, 2012, (47): 843 849, [7] M.PDelplancke-Ogletreea, O.RMonteiro.Wearbehaviorofdiamond-likecarbon/metalcarbid emultilayers, SurfaceandCoatingsTechnology, 1998, (108-109): 484-488]. these multilamellar DLC film technology general silicon, metal or metal carbide layer (not being DLC film) are as stress release layer, with without hydrogen diamond (DLC) layer alternating deposit, the internal stress of diamond like carbon (DLC) thin film can be greatly reduced, make thickness reach micron order, and DLC film excellent tribology performance can be kept, but in preparation process, introduce other elements beyond de-carbon hydrogen (such as titanium, silicon, chromium etc.), define carbon (DLC film)/metallic element (non-DLC film) interface, add quantity and the complexity at interface, when this makes DLC film be on active service for a long time in solution medium, due to interface element fall into disarray, interface element (carbon/metallic element) electrochemical bit difference causes galvanic corrosion, cause the instability at interface, diamond-like multi-layer film is made to peel off, reduce life-span [[8] C.V.Falub of diamond like carbon film, etc.Invitrostudiesoftheadhesionofdiamond-likecarbonthinf ilmsonCoCrMobiomedicalimplantalloy.ActaMaterialia, 2011 (59): 4,678 4689].
Summary of the invention
It is an object of the invention to provide the deposition process of a kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film, the method can surface of the work deposits micron order thickness, multilayer diamond-like (DLC) thin film that high rigidity, low stress, excellent bonding performance, good corrosion resistance, stability are strong; Thus being greatly improved the time that workpiece is on active service under liquid medium environment.
The present invention realizes its goal of the invention, be employed technical scheme comprise that, a kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process, the steps include:
A, put the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, be evacuated to pressure for (1.0-3.0) × 10-3Pa, passes into the sputter clean that workpiece is carried out 20-30 minute by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, on workpiece, apply the pulsed negative bias of 1000-5000V simultaneously, carry out the carbon ion implatation/deposition of 1-3 minute at surface of the work, form implanting transition layer;
C, pass into argon, carbon-source gas to vacuum chamber again, argon and carbon-source gas flow-rate ratio are 1:0.1-5, the gas pressure of vacuum chamber is 0.5-5Pa, on workpiece, apply 200-600V pulsed negative bias simultaneously, start microwave plasma body source, and to make microwave power be 400-800W, workpiece carry out the Microwave Plasma Torch Atomic Emission Spect rometry of 1-30 minute, deposits hydrogeneous DLC film;
D, subsequently, open graphite cathode arc power, make graphite cathode arc discharge produce carbon ion, on workpiece, apply the pulsed negative bias of 100-1000V simultaneously, workpiece carries out the carbon ion deposition of 1-30 minute, workpiece is formed without hydrogen diamond membrane layer;
E, repeat deposition process 1-50 time of step C and D.
Compared with prior art, the invention has the beneficial effects as follows:
One, the present invention creatively alternately adopts vacuum cathode arc source deposition process and plasma enhanced chemical vapor deposition method in the hydrogeneous and not hydrogeneous diamond like carbon film of surface of the work alternating deposit, utilize the advantage of hydrogeneous DLC film layer low stress, discharge the stress of heavily stressed not hydrogeneous DLC film layer, obtain the multilayer diamond-like thin film of low stress, thus successfully preparing the multilayer diamond-like thin film of micron order thickness. Simultaneously because not hydrogeneous Hardness of Diamond-like Carbon Film is high, the hardness of whole thin film is high.
Two, deposition process does not introduce the element beyond carbon, hydrogen so that the C-C grid at multilayer film interface is continued. Avoid carbon/metallic element and form the electrochemical bit difference brought of interface of complexity, and the galvanic corrosion caused. It is effectively increased thin film decay resistance in solution medium and long-time stability, is particluarly suitable in liquid medium environment and the workpiece of military service deposits multilayer diamond-like thin film, be greatly prolonged the time that the workpiece of deposition thin film is on active service in liquid medium environment.
Three, in the plural layers of the inventive method deposition, the composition of each layer, structure regulate and control such as through the technological parameter such as sedimentation time and pulsed bias, it is thus possible to prepare the multilayer diamond-like thin film of the high rigidity of military service, low stress, binding ability excellence, good corrosion resistance, good stability suitable in liquid mediums.
Four, before alternating deposit, first carry out carbon ion implatation/deposition at surface of the work, form implanting transition layer; The diamond like carbon film that alternating deposit is hydrogeneous and not hydrogeneous again so that diamond like carbon film and workpiece excellent bonding performance, further increases the long-time stability of plural layers.
Further, the carbon-source gas in above-mentioned steps C is the one in methane, ethane, ethylene, acetylene.
These carbon-source gas are easy to get, not carbon containing, element beyond hydrogen, can well be ionized thus providing carbon and protium for depositing hydrogeneous DLC film.
Further, the frequency of the pulsed negative bias in above-mentioned steps C is 13.5kHz, and dutycycle is 30%; The frequency of the pulsed negative bias in step B and D is 10-20kHz, and dutycycle is 30-50%.
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the hardness comparison diagram of the multilayer diamond-like thin film that obtains of the embodiment of the present invention 1 and hydrogeneous DLC single thin film, not hydrogeneous DLC single thin film.
Fig. 2 is the silicon chip surface contour curve comparison diagram of the multilayer diamond-like thin film that obtains of the embodiment of the present invention 1 and hydrogeneous DLC single thin film, not hydrogeneous DLC single thin film.
Fig. 3 is the stress comparison diagram of the multilayer diamond-like thin film that obtains of the embodiment of the present invention 1 and hydrogeneous DLC single thin film, not hydrogeneous DLC single thin film.
The DLC single thin film that Fig. 4 a is hydrogeneous utilizes the surface topography of (load is 5N) after SiC ball wear 50,000 cycle of diameter 6mm.
Fig. 4 b is free from the surface topography of (load is 5N) after SiC ball wear 50,000 cycle of the DLC single thin film diameter 6mm of hydrogen.
Fig. 4 c is the multilayer diamond-like thin film that the embodiment of the present invention 1 obtains, the surface topography of (load is 5N) after utilizing SiC ball wear 50,000 cycle of diameter 6mm.
Detailed description of the invention
Embodiment 1
A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process, the steps include:
A, putting the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, being evacuated to pressure is 1.0 × 10-3Pa, passes into the sputter clean that workpiece is carried out 20 minutes by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 10kHz simultaneously, dutycycle is the pulsed negative bias of the 2000V of 50%, carry out the carbon ion implatation/deposition of 2 minutes at surface of the work, form implanting transition layer;
C, pass into argon, acetylene to vacuum chamber again, argon and acetylene flow-rate ratio are 1:3, the gas pressure of vacuum chamber is 2.0Pa, apply frequency on workpiece is 13.5kHz simultaneously, dutycycle is the 400V pulsed bias of 30%, starts microwave plasma body source, and to make microwave power be 600W, workpiece carries out the Microwave Plasma Torch Atomic Emission Spect rometry of 5 minutes, deposits hydrogeneous DLC film;
D, subsequently, open graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 20kHz simultaneously, dutycycle is the 200V pulsed negative bias of 50%, workpiece carries out the carbon ion deposition of 10 minutes, workpiece is formed without hydrogen diamond membrane layer;
E, repeat the deposition process 10 times of step C and D.
Fig. 1 is the hardness comparison diagram of the multilayer diamond-like thin film that obtains of this example and hydrogeneous DLC single thin film, not hydrogeneous DLC single thin film. As can be seen from Figure 1: the not hydrogeneous more hydrogeneous DLC film of DLC film has bigger hardness, and the DLC plural layers hardness that this example prepares is therebetween.
Fig. 2 is the silicon chip surface contour curve comparison diagram of the multilayer diamond-like thin film that obtains of this example and hydrogeneous DLC single thin film, not hydrogeneous DLC single thin film. Fig. 3 is the stress comparison diagram of the multilayer diamond-like thin film that obtains of this example and hydrogeneous DLC single thin film, not hydrogeneous DLC single thin film. As can be seen from Figures 2 and 3: the not hydrogeneous more hydrogeneous DLC film of DLC film has bigger stress, and the stress of the DLC plural layers that this example prepares is therebetween.
The multilayer diamond-like thin film that Fig. 4 a, Fig. 4 b, DLC single thin film respectively hydrogeneous for Fig. 4 c, not hydrogeneous DLC single thin film and this example obtain, the surface topography of (load is 5N) after utilizing SiC ball wear 50,000 cycle of diameter 6mm. From Fig. 4 a, Fig. 4 b, Fig. 4 c it can be seen that the sample of not hydrogeneous DLC film and hydrogeneous DLC film, after 50,000 cycle abrasions, all there is serious wear out failure, and the DLC plural layers that this example prepares did not lose efficacy, there is the abrasion resistance properties of excellence.
Test show this example prepare " the not hydrogeneous DLC of hydrogeneous DLC/ " plural layers thickness is more than 1 micron, wherein hydrogeneous DLC film layer has less stress and hardness, and not hydrogeneous DLC film has bigger stress and hardness. Regulate and control the stress of whole multilayer film by hydrogeneous DLC film, do not introduce hydrocarbon beyond other elements so that interface carbon-to-carbon grid is able to continuously, and thin film is suitable in liquid medium military service.
Embodiment 2
A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process, the steps include:
A, putting the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, being evacuated to pressure is 3.0 × 10-3Pa, passes into the sputter clean that workpiece is carried out 30 minutes by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 20kHz simultaneously, dutycycle is the pulsed negative bias of the 5000V of 40%, carry out the carbon ion implatation/deposition of 1 minute at surface of the work, form implanting transition layer;
C, pass into argon, acetylene to vacuum chamber again, argon and acetylene flow-rate ratio are 1:5, the gas pressure of vacuum chamber is 0.5Pa, apply frequency on workpiece is 13.5kHz simultaneously, dutycycle is the 200V pulsed bias of 30%, starts microwave plasma body source, and to make microwave power be 400W, workpiece carries out the Microwave Plasma Torch Atomic Emission Spect rometry of 1 minute, deposits hydrogeneous DLC film;
D, subsequently, opens graphite cathode arc power, makes graphite cathode arc discharge produce carbon ion, apply frequency on workpiece is 20kHz simultaneously, dutycycle is the 500V pulsed negative bias of 40%, carries out the carbon ion deposition of 1 minute, formed without hydrogen diamond membrane layer on workpiece on workpiece;
E, repeat the deposition process 50 times of step C and D.
Embodiment 3
A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process, the steps include:
A, putting the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, being evacuated to pressure is 2.0 × 10-3Pa, passes into the sputter clean that workpiece is carried out 30 minutes by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 15kHz simultaneously, dutycycle is the pulsed negative bias of the 1800V of 30%, carry out the carbon ion implatation/deposition of 3 minutes at surface of the work, form implanting transition layer;
C, pass into argon, methane to vacuum chamber again, argon and methane flow are than for 1:0.1, the gas pressure of vacuum chamber is 3.0Pa, apply frequency on workpiece is 13.5kHz simultaneously, dutycycle is the 600V pulsed bias of 30%, starts microwave plasma body source, and to make microwave power be 400W, workpiece carries out the Microwave Plasma Torch Atomic Emission Spect rometry of 50 minutes, deposits hydrogeneous DLC film;
D, subsequently, open graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 15kHz simultaneously, dutycycle is the 1000V pulsed negative bias of 30%, workpiece carries out the carbon ion deposition of 30 minutes, workpiece is formed without hydrogen diamond membrane layer;
E, repeat the deposition process 1 time of step C and D.
Embodiment 4
A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process, the steps include:
A, putting the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, being evacuated to pressure is 3.0 × 10-3Pa, passes into the sputter clean that workpiece is carried out 25 minutes by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 20kHz simultaneously, dutycycle is the pulsed negative bias of the 1000V of 50%, carry out the carbon ion implatation/deposition of 2 minutes at surface of the work, form implanting transition layer;
C, pass into argon, ethylene to vacuum chamber again, argon and ethylene flow-rate ratio are 1:0.2, the gas pressure of vacuum chamber is 5.0Pa, apply frequency on workpiece is 13.5kHz simultaneously, dutycycle is the 200V pulsed bias of 30%, starts microwave plasma body source, and to make microwave power be 800W, workpiece carries out the Microwave Plasma Torch Atomic Emission Spect rometry of 20 minutes, deposits hydrogeneous DLC film;
D, subsequently, open graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 20kHz simultaneously, dutycycle is the 100V pulsed negative bias of 50%, workpiece carries out the carbon ion deposition of 10 minutes, workpiece is formed without hydrogen diamond membrane layer;
E, repeat the deposition process 5 times of step C and D.
Embodiment 5
A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process, the steps include:
A, putting the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, being evacuated to pressure is 1.5 × 10-3Pa, passes into the sputter clean that workpiece is carried out 30 minutes by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 15kHz simultaneously, dutycycle is the pulsed negative bias of the 3000V of 30%, carry out the carbon ion implatation/deposition of 1 minute at surface of the work, form implanting transition layer;
C, pass into argon, ethane to vacuum chamber again, argon and ethane flow-rate ratio are 1:2, the gas pressure of vacuum chamber is 1.0Pa, apply frequency on workpiece is 13.5kHz simultaneously, dutycycle is the 200V pulsed bias of 30%, starts microwave plasma body source, and to make microwave power be 500W, workpiece carries out the Microwave Plasma Torch Atomic Emission Spect rometry of 30 minutes, deposits hydrogeneous DLC film;
D, subsequently, open graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, apply frequency on workpiece is 20kHz simultaneously, dutycycle is the 800V pulsed negative bias of 50%, workpiece carries out the carbon ion deposition of 20 minutes, workpiece is formed without hydrogen diamond membrane layer;
E, repeat the deposition process 3 times of step C and D.

Claims (3)

1. a deposition process for low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film, the steps include:
A, put the workpiece in in the vacuum chamber of the magnetic filtered vacuum arc source device of microwave plasma source, be evacuated to pressure for (1.0-3.0) × 10-3Pa, passes into the sputter clean that workpiece is carried out 20-30 minute by argon in vacuum chamber;
B, open magnetic filtered vacuum arc source device graphite cathode arc power, graphite cathode arc discharge is made to produce carbon ion, on workpiece, apply the pulsed negative bias of 1000-5000V simultaneously, carry out the carbon ion implatation/deposition of 1-3 minute at surface of the work, form implanting transition layer;
C, pass into argon, carbon-source gas to vacuum chamber again, argon and carbon-source gas flow-rate ratio are 1:0.1-5, the gas pressure of vacuum chamber is 0.5-5Pa, on workpiece, apply 200-600V pulsed negative bias simultaneously, start microwave plasma body source, and to make microwave power be 400-800W, workpiece carry out the Microwave Plasma Torch Atomic Emission Spect rometry of 1-30 minute, deposits hydrogeneous DLC film;
D, subsequently, open graphite cathode arc power, make graphite cathode arc discharge produce carbon ion, on workpiece, apply the pulsed negative bias of 100-1000V simultaneously, workpiece carries out the carbon ion deposition of 1-30 minute, workpiece is formed without hydrogen diamond membrane layer;
E, repeat deposition process 1-50 time of step C and D.
2. the deposition process of a kind of low stress according to claim 1, corrosion resistant multilayer diamond like carbon (DLC) thin film, it is characterised in that the carbon-source gas in described step C is the one in methane, ethane, ethylene, acetylene.
3. the deposition process of a kind of low stress according to claim 1, corrosion resistant multilayer diamond like carbon (DLC) thin film, it is characterised in that the frequency of the pulsed negative bias in described step C is 13.5kHz, and dutycycle is 30%; The frequency of the pulsed negative bias in step B and D is 10-20kHz, and dutycycle is 30-50%.
CN201410191897.0A 2014-05-08 2014-05-08 A kind of low stress, corrosion resistant multilayer diamond like carbon (DLC) thin film deposition process Expired - Fee Related CN103938211B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101298656A (en) * 2008-01-18 2008-11-05 西南交通大学 Preparation of high-hardness diamond-like multi-layer film
CN101464528A (en) * 2008-01-23 2009-06-24 四川大学 DLC infrared anti-refiection protective film and method for producing the same
CN103243304A (en) * 2013-05-14 2013-08-14 西南交通大学 Method for improving mechanical property on surface of metal workpiece

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101298656A (en) * 2008-01-18 2008-11-05 西南交通大学 Preparation of high-hardness diamond-like multi-layer film
CN101464528A (en) * 2008-01-23 2009-06-24 四川大学 DLC infrared anti-refiection protective film and method for producing the same
CN103243304A (en) * 2013-05-14 2013-08-14 西南交通大学 Method for improving mechanical property on surface of metal workpiece

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