CN108842133A - A kind of preparation method and equipment of graphical electrostatic chuck - Google Patents
A kind of preparation method and equipment of graphical electrostatic chuck Download PDFInfo
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- CN108842133A CN108842133A CN201810546801.6A CN201810546801A CN108842133A CN 108842133 A CN108842133 A CN 108842133A CN 201810546801 A CN201810546801 A CN 201810546801A CN 108842133 A CN108842133 A CN 108842133A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses the preparation method and equipment of a kind of graphical electrostatic chuck, preparation method includes：Choose oversize (being greater than 300mm) potsherd (AIN or Al2O3) be used as substrate, and stamp graphical organic gel exposure mask, using ion beam technology deposition have high resistivity, high rigidity, wear resistance, anti-ion erosion DLC film layer.Deposition method includes：Gradient puppet diffusion layer is formed in substrate injected with metallic elements using high-energy metals vacuum and steam ion source (MEVVA), then uses 90 degree of ultra-wide Magnetic filter metallic cathode Vacuum Arc (FCVA) technologies, deposited metal transition zone；On intermediate metal, the DLC film layer of high sp2 content is obtained using single T-type filtered cathodic vacuum arc (FCVA) deposition；Superhard DLC film layer is obtained using double-T shaped filtered cathodic vacuum arc (FCVA) deposition on the high sp2 content DLC film layer；The resistance of film layer can reach 10-50M Ω, and hardness can reach 80Gpa or more.By applying the present invention, can make electrostatic chuck that there is excellent wearability and service life.
Description
The present invention relates to ic manufacturing technology field, in particular to one kind deposits one layer on graphical electrostatic chuck
With high resistivity, high rigidity, wear resistance, anti-ion erosion DLC film layer method and apparatus.
Background technique
As global economy gets warm again after a cold spell, IC manufacturing welcomes spring again, the demand to chuck and electrostatic chuck sharply on
It rises.Electrostatic chuck is the silicon chip clamping tool in semiconductor technology, generates adsorption capacity, the key of absorption clamping wafer by electrostatic
Hold assembly.Its grasping system is usually a sandwich structure：Upper layer and lower layer are electrode, one layer of dielectric of sandwich,
Middle silicon wafer serves as the electrode of upper surface, and lower electrode and dielectric are integrated manufacture in a device, i.e. referred to as electrostatic chuck.Allusion quotation
The electrostatic chuck surface dielectric layer of type is insulating layer material, and general using ceramics manufacture, electrostatic chuck is expensive and usually exists
After the long-time of half a year or 1 year, there are the damaged conditions such as pollution, abrasion and plasma erosion, need by cleaning, tieing up
The means such as repairing, renovate and replace could continue reliably to use.Electrostatic chuck has obvious excellent relative to other silicon chip clamping technologies
Gesture, but electrostatic chuck the relevant technologies are but substantially a blank at home.But now in AlN or Al2O3Equal ceramic materials table
Wheat flour is made diamond-like coating and is not seen in the literature also, seldom similar relevant report.
Summary of the invention
In view of this, the first purpose of the embodiment of the present invention is to utilize diamond-like carbon film layer high resistivity, high rigidity, wear-resisting
Damage property, the characteristic of anti-ion erosion, in combination with metal vacuum steam plasma source (MEVVA) and magnetic filtered vacuum arc deposition system
System (FCVA) proposes a kind of graphical electrostatic chuck manufacturing method and equipment, and can be prepared has height in the actual environment
Service life, and the electrostatic chuck that wearability is excellent.
For further, which includes：Metal ion note is carried out in the substrate surface
Enter to be formed metal gradient puppet diffusion layer, intermediate metal is obtained in metal puppet diffusion layer surface deposition, then in intermediate metal
Surface deposits the DLC film layer of the high sp2 content of first layer, finally deposits the second layer in the DLC film layer surface of the high sp2 content of first layer
Superhard DLC film layer.
Optionally, in some embodiments, the basal layer is to be printed on the oversize of graphical organic gel exposure mask (to be greater than
300mm) AlN or Al2O3Potsherd.The metallic element is Ti or Cr, Au, Ag etc., and injection beam intensity is 1~10mA, note
Entering dosage is 1 × 1015~1 × 1017/cm2。
Optionally, in some embodiments, the intermediate metal be Ti film layer or Cr, the film layers such as Au, Ag, and with a thickness of
2-5μm。
Optionally, in some embodiments, it using 90 degree of ultra-wide FCVA ion source, is spread in the metal gradient puppet
On layer, Magnetic filter deposits intermediate metal；Wherein, the metallic element of the intermediate metal is Ti or Cr, Au, Ag, and thick
Degree is 2-5 μm；When carrying out Magnetic filter deposition, arc stream 80-130A, 2.0~4.0A of bend pipe magnetic field, back bias voltage -200-
1000V, depositing temperature are 200-400 DEG C, and deposition vacuum degree is 1 × 10-3-1×10-1Pa range alternately changes, and beam intensity is not
Lower than 1200mA,
Optionally, in some embodiments, using described single T-type filtered cathodic vacuum arc (FCVA) system, described
On intermediate metal, the DLC film layer of the high sp2 content of first layer is deposited, and with a thickness of 100~500nm；Carry out the magnetic mistake
When filter deposition, applying high power pulse bias on intermediate metal is 1~10kV, and pulse width is 0.1~1.2ms, pulse
Frequency is 1~100Hz, and for duty ratio less than 1/10000, peak power is 0.1~5MW, 20-80 DEG C of depositing temperature, is passed through simultaneously
Carrier gas argon gas (Ar), flow 0-10sccm, sedimentation time 10-30min；
Optionally, in some embodiments, using double-T shaped filtered cathodic vacuum arc (FCVA) system, described
Hard DLC film layer is deposited on the soft DLC film layer of the second layer, and with a thickness of 3~5 μm；When carrying out Magnetic filter deposition, apply straight
Stream bias is -300~-600V, striking current 70-100A, 2.0~4.0A of bend pipe magnetic field, duty ratio 20~80%, line 50-
150mA, 20-40 DEG C of depositing temperature, sedimentation time 1-3h；
The Preparation equipment for the graphical electrostatic chuck that the embodiment of the present invention proposes is used to implement any of the above-described figure
Change the preparation method of electrostatic chuck, the Preparation equipment of the graphical electrostatic chuck includes：Injection device is configured to utilize high energy gold
Belong to steam-to-vacuum arc (MEVVA) system, injects metal Ti or Cr, Au to specimen surface, Ag element forms the diffusion of metal gradient puppet
Layer；Precipitation equipment is configured to 1 set of 90 degree of ultra-wide filtered cathodic vacuum arc (FCVA) system, heavy in metal puppet diffusion layer surface
Product intermediate metal；1 set of single T-type filtered cathodic vacuum arc (FCVA) system is high in metal transfer layer surface deposition first layer
The DLC film layer of sp2 content；1 set of double-T shaped filtered cathodic vacuum arc (FCVA) system, in the DLC film of the high sp2 content of first layer
Layer surface deposits the superhard DLC film layer of the second layer.
Compared with the existing technology, various embodiments of the present invention have the advantage that：
1. the embodiment of the present invention proposes the preparation method and equipment of graphical electrostatic chuck, by carrying out high energy to template
Metallic element injects to form metal gradient puppet diffusion layer, the structural membrane that can be deposited with template or even subsequent Magnetic filter
The binding force of layer is all very good, so that its peel strength be made to be enhanced；
2. the embodiment of the present invention proposes the preparation method and equipment of graphical electrostatic chuck, a kind of novel super thick is proposed
Superhard DLC film layer preparation process, to intermediate metal apply high power pulse bias prepare soft DLC film layer, by metal layer with
The combination of soft DLC film layer discharges stress, to improve binding force.
3. the embodiment of the present invention proposes the preparation method and equipment of graphical electrostatic chuck, by the precipitation equipment
Magnetic filter apply pulsed positive bias, to improve the transmission rate of plasma, be conducive to improve film hardness, wearability,
Compactness, film-substrate cohesion etc..
4. the embodiment of the present invention proposes the preparation method and equipment of graphical electrostatic chuck, by using high-energy metals vacuum
Steam plasma source (MEVVA) to its extraction electrode and accelerates electrode to redesign, and can effectively carry out to ion beam current big
The requirement for reaching the workpiece processing to big width is realized in width broadening.
5. the embodiment of the present invention proposes the preparation method and equipment of graphical electrostatic chuck, by setting magnetic filter
Divergence line packet be plasma exit line packet, deposition may be implemented in potsherd substrate and obtain innovative large-sized DLC
Film layer.
6. present example also proposes that novel single T and double-T shaped pipeline carry out the deposition of DLC film layer, can effectively improve
The filter efficiency of magnetic filter improves atom ionization level, plasma density can be made to increase, and bulky grain is reduced when film forming, answers
Power reduces, so that the PVD depositions method such as the mass ratio of DLC film layer 90 degree of Magnetic filter depositions, magnetron sputtering, electron beam evaporations obtains
DLC film layer have better film quality and higher hardness.
7. the depositing device is provided with any of the above-described technical side in addition, the embodiment of the present invention also proposes a kind of depositing device
Described in case.It should be noted that for the aforementioned method embodiment, for simple description, therefore, it is stated as a series of
Combination of actions but those skilled in the art should understand that, the present invention is not limited by the sequence of acts described because according to
According to the present invention, some steps may be performed in other sequences or simultaneously.Secondly, those skilled in the art should also know that,
The embodiments described in the specification are all preferred embodiments, and related movement is not necessarily essential to the invention.
The above description is only an embodiment of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
More features and advantages of the embodiment of the present invention will be explained in specific embodiment later.
Detailed description of the invention
The attached drawing for constituting a part of the embodiment of the present invention is used to provide to further understand the embodiment of the present invention, the present invention
Illustrative embodiments and their description be used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is the preparation method flow diagram of graphical electrostatic chuck provided in an embodiment of the present invention；
Fig. 2 is graphical electrostatic chuck structural schematic diagram provided in an embodiment of the present invention；
Fig. 3 is metal vacuum steam plasma provided in an embodiment of the present invention source (MEVVA) schematic diagram and pictorial diagram；
Fig. 4 is Magnetic filter FCVA system structure diagram provided in an embodiment of the present invention；
Fig. 5 is that the sedimentary bond energy map that XPS is detected is carried out after sample provided in an embodiment of the present invention is cut；
Fig. 6 deposited samples SEM pattern photo provided in an embodiment of the present invention；
Fig. 7 comparison number provided in an embodiment of the present invention with DLC coating and the experimental piece coefficient of friction without DLC coating
According to；
Under the differentiated friction time that Fig. 8 contourgraph provided in an embodiment of the present invention measures, scratch depth data comparison；
Description of symbols
200 large-size ceramic piece substrates
210 metal gradient puppet diffusion layers
220 intermediate metals
The high sp2 linkage content DLC film layer of 230 first layers
240 hard DLC films
300 MEVVA cathode targets and pictorial diagram
301 extraction electrode schematic diagrames and pictorial diagram
302 accelerate electrode schematic diagram and pictorial diagram
303 trigger electrodes
304 ion beams
400 90 degree of FCVA cathodes
410 high impulse line packets
420 inhibit line packet
430 flash line packets
440 medium line packets
450 magnetic filters
460 divergence line packets
470 workbench
480 single T-type Magnetic filter FCVA schematic diagrames
490 double-T shaped Magnetic filter FCVA schematic diagrames
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in the embodiment of the present invention and embodiment can be mutual group
It closes.
With reference to the accompanying drawing, each preferred embodiment of the invention is described further：
Embodiment of the method
With the development of global science and technology, IC manufacturing returns climax again, and the demand to chuck and electrostatic chuck is sharply
Rise.Electrostatic chuck is the silicon chip clamping tool in semiconductor technology, and the excellent electrostatic chuck of processability has very important
Meaning.Here, a kind of manufacturing method of graphical electrostatic chuck is provided.
It should be noted that preparing DLC film by ion beam technology, the basal layer of selection is super large ruler in the present embodiment
Very little (being greater than 300mm) AlN or Al2O3Potsherd.Referring to Fig.1, it illustrates the present embodiment DLC film preparation method, the preparation sides
Method includes the following steps：
S100：Oversize (being greater than 300mm) AlN or Al of graphical organic gel exposure mask is printed on using surface2O3Potsherd
As substrate.
Silk-screen halftone is made according to mask design figure in this step, exposure mask glue uses the Japanese Silicon RTV glue of heatproof,
The temperature resistant range of the glue is 80-400 DEG C, and does not discharge gas in the range, while being not more than with substrate bond strength
40N.By the screen printing apparatus of automatic (semi-automatic or manual) by patterned organic offset printing and potsherd surface.And
It is dried under 200 DEG C of isoperibol.
S200：Using high-energy metals vacuum and steam ion source (MEVVA) ion implant systems, gold is injected on specimen surface
Belong to element and forms gradient puppet diffusion layer.
Wherein, this step is to be capable of forming the mixed layer of metal and base material using high-energy metals ion implanting substrate,
Improve the binding force of its surface and subsequent film and substrate.In this step, optionally, metallic element uses Ti or Cr, Au,
Ag etc., metal ion energy alternately change in 100-400KeV range, and beam intensity is 1~10mA, and implantation dosage is 1 × 1015
~1 × 1017/cm2, inject depth 200-500nm.
S300：Using 90 degree of ultra-wide filtered cathodic vacuum arc (FCVA) depositing systems, deposited on gradient puppet diffusion layer
Obtain intermediate metal of the thickness range at 2-5 μm；
In this step, optionally, intermediate metal is Ti film layer or Cr, film layers such as Au, Ag, and with a thickness of 2-5 μm.The starting the arc
Electric current is 80-130A, and beam intensity is not less than 1200mA, 2.0~4.0A of bend pipe magnetic field, back bias voltage -200-1000V, when deposition
Between be 10-30min, depositing temperature is 200-400 DEG C, and the size of metal nanoparticle is 50-100nm.
S400：It is deposited on the intermediate metal using single T-type filtered cathodic vacuum arc (FCVA) method
To thickness range the high sp2 content of first layer of 100500nm DLC film layer.
In this step, optionally, carbon source is cathode, and deposition obtains first layer DLC film layer with a thickness of 100500nm.Apply high
Power pulse bias is 1~10kV, and pulse width is 0.1~1.2ms, and pulse frequency is 1~100Hz, and duty ratio is less than 1/
10000, peak power be 0.1~5MW, deposit line 100-300mA, 20-80 DEG C of depositing temperature, at the same be passed through carrier gas be argon gas
(Ar), flow 0-10sccm, deposition vacuum is 1 × 10-4-1×10-2Pa range alternately changes, sedimentation time 10-30min.
S500：Using double-T shaped filtered cathodic vacuum arc (FCVA) method, in the DLC of the high sp2 content of the first layer
Film layer deposits to obtain the second layer hard DLC film layer of the thickness range at 3~5 μm.
In this step, hard DLC film layer with a thickness of 3~5 μm, on first layer DLC film layer apply Dc bias -300~-
600V, striking current 70-100A, 2.0~4.0A of bend pipe magnetic field, deposition line 50-150mA, duty ratio 20~80%, deposition
20-40 DEG C of temperature, sedimentation time 1-3h.
S600：Remove organic gel exposure mask.
In this step, optionally, sample is impregnated 1 hour in acetone, then strikes off organic gel exposure mask using plastic knife,
It is finally cleaned and is dried.
Above-described embodiment is prepared in substrate by the metallic element that metal vacuum steam plasma source (MEVVA) system is injected
Metal puppet diffusion layer, the metal transfer that the metallic element of 90 degree of ultra-wide magnetic filtered vacuum arc depositing system (FCVA) depositions is constituted
Layer, single T and double T magnetic filtered vacuum arc depositing systems (FCVA) deposit the DLC film layer of soft or hard combination.This layer and substrate material
Material has extraordinary bond strength, in combination with the anti-ion erosion of DLC film layer, ultra-high resistance rate, hardness and excellent
The characteristics such as wear resistance, make to have the electrostatic chuck of surface covering wearability and in terms of have it is apparent excellent
Gesture.
Apparatus embodiments
For the preparation method for realizing above-mentioned film layer, the various embodiments described above are based on, the present embodiment proposes a kind of graphical electrostatic
The manufacturing equipment of chuck, the manufacturing equipment are mainly based upon the modified device on large-size ceramic piece surface, including following device：
A) injection device
Injection device is used to utilize high-energy metals vacuum and steam ion source (MEVVA), to basal layer injection metal member
Element,
Metal-doped injection is carried out to the basal layer.
It should be noted that MEVVA ion source mainly generates area by plasma and ion beam draw-out area forms, plasma
Body generates area i.e. metal vapor vacuum arc region of discharge.MEVVA ion implanting is exactly the load energy generated using MEVVA ion source
Ion beam bombardment material surface carries out ion implanting to workpiece surface, to change the mistake of the physics of material surface, chemical property
Journey enables film to be securely joined with workpiece substrate.
Meanwhile the high-energy metals vacuum and steam ion source (MEVVA), by its extraction electrode and acceleration electrode
It redesigns, effectively ion beam current substantially can be broadened, the broader workpiece of size can be handled.As shown in Figure 3.
B) precipitation equipment, precipitation equipment (FCVA) are mainly used for deposited metal transition zone and DLC film layer；
It should be noted that FCVA mainly utilizes DC low-voltage arc discharge to generate metal or carbon plasma, lead to
It crosses magnetic filter and is drawn out to matrix surface plated film, by adding cation to matrix surface plus negative pressure in substrate surface
Speed enables coating to be further firmly combined with workpiece substrate.As shown in Figure 4.
In the following, in the specific implementation process making above-mentioned graphical electrostatic chuck manufacturing method into one in conjunction with an example
Walk explanation：
It is described with reference to the drawings, the detailed manufacturing method for introducing a kind of graphical electrostatic chuck of the invention, implementation steps
It is as follows：
1. prepared by metal gradient puppet diffusion layer 210：Injection：Basal layer 200 is fixed on sample stage 470, and turns to note
Enter target position to start to inject.The pure metal Ti or Cr that ion source is purity 99.9% are injected, Au, Ag etc., injection condition is vacuum degree
It is 1 × 10-3~6 × 10-3Pa, injection metal ion energy 100-400KeV range alternately change, beam intensity be 1~
10mA, implantation dosage are 1 × 1015~1 × 1017/cm2, inject depth 200-500nm.
2. prepared by intermediate metal 220：Metal ion deposition：Rotation sample to 90 degree of ultra-wide Magnetic filter deposition target position start
Deposition.Depositing arc source is the source purity 99%Ti or Cr, and Au, source Ag etc., sedimentary condition is：Vacuum degree is 1 × 10-3-1× 10- 1Pa range alternately changes, striking current 80-130A, 2.0~4.0A of bend pipe magnetic field, back bias voltage -200-1000V, beam intensity
Not less than 1200mA, sedimentation time 10-30min, depositing temperature is 200-400 DEG C.
3. prepared by the high sp2 linkage content DLC film layer 230 of first layer：DLC film deposition：Sedimentary condition is that deposition arc source is purity
99% carbon arc source, vacuum degree are 1 × 10-4~6 × 10-2Pa, applying high power pulse bias on 220 is 1~10kV, arteries and veins
Rushing width is 0.1~1.2ms, and pulse frequency is 1~100Hz, and for duty ratio less than 1/10000, peak power is 0.1~5MW, is sunk
20-80 DEG C of accumulated temperature degree is passed through carrier gas argon gas (Ar), flow 0-10sccm, sedimentation time 10-30min, and deposition obtains first
The high sp2 linkage content DLC film layer of layer.
4. prepared by hard DLC film 240：On 230 apply Dc bias be -300~-600V, striking current 70-100A,
2.0~4.0A of bend pipe magnetic field deposits line 50-150mA, duty ratio 20~80%, 20-40 DEG C of depositing temperature, sedimentation time is
1-3h, deposition obtain the superhard DLC film of the second layer.Finally obtaining DLC film layer overall thickness is 3-5 microns, hardness 40-100GPa.
To analyze metal/DLC composite membrane, can refer to Fig. 5,6a here), 6b), Fig. 5 be sample cutting after carry out
The sedimentary bond energy map that XPS is detected；Fig. 6 is deposited samples SEM pattern photo, a) is sample cross pattern photo,
It b) is DLC surface topography photo.In conjunction with Fig. 5 it is found that having a main peak in bond energy map, between 284.4-285.1eV.By
It is located at 284.4eV in carbon sp2 characteristic peak, carbon sp3 characteristic peak is located at 285.2eV, illustrates the main peak by carbon sp2 hydridization peak and sp3
Hydridization peak is combined, it was demonstrated that superficial deposit film is the diamond-like DLC film with metastable structure.Using Gaussian function into
The fitting of row swarming, obtaining sp2/sp3 ratio is about that 1/4, sp3 content is higher, illustrates to obtain DLC film performance with more diamond tendency
Property.As can be seen that top layer DLC, metal transfer film and bottom ceramic substrate three-decker interface layer are clear from Fig. 6 a), layer
Obvious gap and cracking are had no between layer, are well combined between each film layer.As can be seen that film layer is more flat from Fig. 6 b)
Whole, particle diameter is small and uniform, and surface does not have apparent bulky grain packing phenomenon, this mainly passes through FCVA system and has filtered greatly
Granule particles, so as to form the coating of one layer of more dense uniform.
Contrast test example
In order to further show the beneficial effect of film layer of the invention, AlN ceramic piece is selected to rub as substrate
Wear test carries out test comparison.
Embodiment one：There is no the AlN ceramic piece of DLC coating；
Embodiment two：AlN ceramic piece with DLC coating；
It is tested using UMT friction and wear tester, is specifically set as below：Using the SiC standard ball of diameter 4mm,
Loading force 200g, load time are respectively 5min, 10min, 15min, 30min, 60min, 120min and 180min, and rub frequency
For 2Hz, reciprocation type friction.
Referring to Fig. 7, for the correlation data of the experimental piece coefficient of friction with DLC coating and without DLC coating.
From figure 7 it can be seen that the aluminium nitride coefficient of friction with DLC coating is lower than 0.09, it is minimum to reach 0.05 or so, and
The aluminium nitride coefficient of friction for not depositing DLC is larger, between about 0.8-0.9.Coefficient of friction embodies the wearability of material, friction
Coefficient is smaller, and the wearability of film is better, and the aluminium nitride coefficient of friction with DLC coating does not have the 1/ of cated aluminium nitride about
10, wearability is much better than do not have cated mirror surface aluminium nitride.
Referring to Fig. 8, under the differentiated friction time measured for contourgraph, scratch depth data comparison.
From figure 8, it is seen that the aluminium nitride with DLC coating is in the scratch that fraction time is 5min, 10min and 15min
It loses micro, it is difficult to measure.Occur that depth, about 0.1 μm can be measured after friction 30min, after 180min
Depth is 0.33 μm.There is no the aluminium nitride scratch depth of DLC coating to be above the aluminium nitride with DLC coating,
Depth just alreadys exceed 0.5 μm after friction 30min, and scratch depth reaches 2.51 μm after 180min, and loss amount is that tool is cated
7.6 times of aluminium nitride.DLC coating keeps good wearability in long-time fretting wear, effectively reduces electrostatic card
The abrasion of disk aluminium nitride dielectric layer.
The electrostatic adsorption force F theoretical calculation formula of electrostatic chuck isThe size and ceramics of electrostatic adsorption force F
Layer thickness d square be proportional relation.For the aluminium nitride dielectric layer with a thickness of 0.3mm, do not have cated dielectric layer because
Uninterrupted friction, when wearing depth reaches 2.51um, electrostatic adsorption force increases by 1.69%；Dielectric layer with DLC coating is same
Under equal friction conditions, loss increases by 0.22% with a thickness of 0.33um, electrostatic adsorption force.
Under normal circumstances, electrostatic force increase is conducive to effectively adsorb wafer.But adsorption capacity is more than certain value, then can adsorb
Wafer bow curvature is caused to increase and finally rupture in clamping process.Meanwhile in actual use, electrostatic chuck dielectric layer
The change of surface state (such as roughness) has a significant impact to distribution of charges uniformity and electrostatic adsorption force size stabilization.Tool
Cated dielectric layer can effectively maintain dielectric layer surface state, and charge is made to be evenly distributed in dielectric layer surface, guarantee electrostatic card
Disk folder holds adsorption capacity size stable and consistent during wafer.
In addition, the breakdown voltage of electrostatic chuck dielectric layer is directly proportional to its thickness, the dielectric layer after wearing after a period of time
Thickness is thinned, and will increase the probability of breakdown failure.Such as previous experiments data, for the aluminium nitride with a thickness of 0.3mm, when not having
When cated dielectric layer loss thickness reaches 2.51 μm, breakdown voltage decline 0.84%；And the dielectric layer with DLC coating exists
Under same friction condition, breakdown voltage only declines 0.11%.Importantly, dielectric layer surface may due to fretting wear
Microdefect is formed, the local accumulation and microcosmic breakdown of charge are in turn resulted in, electrostatic chuck service life is caused to decline.
To sum up, the ceramic dielectric layer surface by FCVA technique in electrostatic chuck deposits DLC coating, and to reach enhancing, its is resistance to
The purpose of mill property.By studying depositing operation, uniform, fine and close and high resistivity, high rigidity, wear-resisting can be formed in ceramic surface
Damage property, plasma resistant ion erosion DLC coating.After depositing coating, experimental piece coefficient of friction can reduce by 90%, in phase
It is greatly reduced with its abrasion under experiment condition, and then facilitates the increase of electrostatic chuck service life.
Claims (9)
1. a kind of preparation method of graphical electrostatic chuck, which is characterized in that including：
A) potsherd (AIN or Al that size is greater than 300mm are chosen2O3) it is used as substrate, graphical organic gel is stamped in substrate surface
Exposure mask；
B) high-energy metals vacuum and steam ion source (MEVVA) ion implant systems, the injected with metallic elements on specimen surface are utilized
Gradient puppet diffusion layer is formed, metal ion energy alternately changes within the scope of 100-400KeV, injects depth 200-500nm, note
Enter dosage 1 × 1015~1 × 1017/cm2；
C) 90 degree of ultra-wide Magnetic filter metallic cathode Vacuum Arc (FCVA) depositing systems are utilized, deposits and obtains on gradient puppet diffusion layer
Intermediate metal of the thickness range at 2-5 μm, metal striking current are 80-130A, sedimentation time 10-30min；
D) using single T-type filtered cathodic vacuum arc (FCVA) method, on the intermediate metal, deposition obtains thickness model
It is trapped among the DLC film layer of the high sp2 content of first layer of 100~500nm, the hardness of DLC film layer is 20-40Gpa, depositing temperature 20-
80 DEG C, line 100-300mA, sedimentation time 10-30min are deposited, while being passed through carrier gas is argon gas (Ar), flow 0-
10sccm, deposition vacuum is 1 × 10-4-1×10-2Pa range alternately changes；
E) double-T shaped filtered cathodic vacuum arc (FCVA) method is used, on the DLC film layer of the high sp2 content of the first layer
Deposition obtains the second layer hard DLC film layer of the thickness range at 3~5 μm, and the hardness of DLC film layer is 40-100Gpa, depositing temperature
20-40 DEG C, deposit line 50-150mA, sedimentation time 1-3h；
F) organic gel exposure mask is removed.
2. a kind of preparation method of graphical electrostatic chuck according to claim 1, it is characterised in that：With 300mm's
Large-size ceramic piece is as substrate, by the screen printing apparatus of automatic (semi-automatic or manual) by patterned organic gel exposure mask
Print and substrate surface, the temperature resistant range of the glue are 80-400 DEG C, do not discharge gas in the range, at the same with substrate bond strength
No more than 40N.
3. a kind of preparation method of graphical electrostatic chuck according to claim 1, it is characterised in that：It is adopted in specimen surface
It is injected with metal vacuum steam plasma source (MEVVA) ion implantation device, injected with metallic elements is Ti or Cr, Au, Ag
Alternately change Deng, ion energy in 100-400KeV range, beam intensity is 1~10mA, and implantation dosage is 1 × 1015~1 ×
1017/cm2。
4. a kind of preparation method of graphical electrostatic chuck according to claim 1, it is characterised in that：
(a) in deposited metal transition zone, metallic diaphragm can be Ti or Cr, the film layers such as Au, Ag, striking current 80-130A, bend pipe
2.0~4.0A of magnetic field, and deposition thickness is 2-5 μm of metal layer under the conditions of the back bias voltage of -200-1000V, temperature when deposition
It is 200-400 DEG C, vacuum degree is 1 × 10 when deposition-3-1×10-1Pa range alternately changes, and beam intensity is not less than 1200mA,
The size of metal nanoparticle is in 50-100nm range.
(b) in DLC films deposited, apply the compound Dc bias of high power pulse bias.
When depositing the high sp2 linkage content DLC film layer of first layer, using single T-type filter pipe, the pipeline magnetic filter efficiency is high, makes big
Particle is reduced；Applying high power pulse bias in metal layer is 1~10kV, and pulse width is 0.1~1.2ms, pulse frequency 1
~100Hz, for duty ratio less than 1/10000, peak power is 0.1~5MW, 20-80 DEG C of depositing temperature, is passed through carrier gas argon gas
(Ar), deposition thickness is 100-500nm, hardness 20-40Gpa, the of high sp2 linkage content under conditions of flow is 0-10sccm
One layer of DLC film layer；
When depositing the superhard DLC film of the second layer, using double-T shaped magnetic filter duct, which can reduce depositing temperature, at the same substantially without
Bulky grain；Applying Dc bias on the DLC film layer of the high sp2 linkage content of first layer is -300~-600V, striking current 70-
100A, 2.0~4.0A of bend pipe magnetic field, duty ratio 20~80%, deposition thickness is 3~5 μ under conditions of 20-40 DEG C of depositing temperature
M, hardness 40-100Gpa, high sp3 linkage content, the hard DLC film layer of high resistivity.
5. a kind of preparation method of graphical electrostatic chuck according to claim 1, equipment are characterized in that, including：
(a) injection device is configured to high-energy metals steam-to-vacuum arc (MEVVA) system, while metal ion source carries lead shield screen
Cover device, lead shield with a thickness of 10-50mm, inject metal Ti or Cr to the specimen surface using the MEVVA ion source,
Au, Ag element form metal puppet diffusion layer；Wherein, metal ion energy alternately changes within the scope of 100-400KeV, and line is strong
Degree is 1~10mA, and implantation dosage is 1 × 1015~1 × 1017/cm2。
(b) precipitation equipment is configured to 1 set of 90 degree of ultra-wide filtered cathodic vacuum arc (FCVA) system, 1 set of single T-type Magnetic filter yin
Pole Vacuum Arc (FCVA) system, 1 set of double-T shaped filtered cathodic vacuum arc (FCVA) system.
Using 90 degree of ultra-wide filtered cathodic vacuum arc (FCVA) systems, deposition obtains metal on metal gradient puppet diffusion layer
Transition zone；Ion beam current can effectively be extended by ultra-wide magnetic filter, so as to work large-size workpiece
Processing；
Using single T-type filtered cathodic vacuum arc (FCVA) system, deposition obtains the high sp2 key of first layer and contains on intermediate metal
Measure DLC film layer；The Magnetic filter of single T-type magnetic filter is high-efficient, can significantly reduce the appearance of bulky grain；
Using double-T shaped filtered cathodic vacuum arc (FCVA) system, deposition obtains superhard DLC film layer on first layer DLC film layer；
Depositing temperature can be effectively reduced in double-T shaped magnetic filter, and stress is obviously reduced, and promote film quality, while substantially without big
Grain occurs.
6. a kind of preparation method of graphical electrostatic chuck according to claim 5, equipment are characterized in that：The height
It energy metal vacuum steam plasma source (MEVVA) can be effectively right by being redesigned to its extraction electrode and acceleration electrode
Ion beam current is substantially broadened, and the workpiece of 100-600mm wide can be handled.
7. a kind of preparation method of graphical electrostatic chuck according to claim 5, equipment are characterized in that：Described 90
Degree ultra-wide, single T-type and double-T shaped filtered cathodic vacuum arc (FCVA) system and device include：Cathode targets, the first flash line
Packet inhibits line packet, magnetic filter, is disposed with flash line packet, medium line packet and divergence line packet on bend pipe, fills deposition
Set the requirement that can satisfy the potsherd uniform coated of 100-600mm diameter.
8. a kind of preparation method of graphical electrostatic chuck as claimed in claim 7, equipment is characterized in that, to the magnetic mistake
Filter bend pipe apply pulsed positive bias, improve the transmission rate of plasma, be conducive to improve film hardness, wearability, compactness,
Film-substrate cohesion etc.；The pulsed positive bias 0~100Hz of frequency, 0~100V of voltage.
9. a kind of preparation method and equipment of graphical electrostatic chuck, which is characterized in that be provided with and appointed using Claims 1-4
One in AIN or Al2O3The method of DLC films deposited in potsherd substrate, while being manufactured using claim 5 to 8 equipment
Graphical electrostatic chuck.
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| CN110119073A (en) * | 2019-05-08 | 2019-08-13 | 深圳市华星光电技术有限公司 | Restorative procedure, chuck and the array exposure machine of the chuck of array exposure machine |
| CN110747437A (en) * | 2019-12-06 | 2020-02-04 | 北京师范大学 | Magnetic filtering pipeline |
| CN111607793A (en) * | 2020-06-29 | 2020-09-01 | 北京师范大学 | Shaving blade ultrathin carbon film layer material and preparation method thereof |
| TWI731733B (en) * | 2019-07-05 | 2021-06-21 | 大陸商北京北方華創微電子裝備有限公司 | Screen structure and FCVA equipment |
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