CN103926971A - Current reference circuit for light sensor - Google Patents
Current reference circuit for light sensor Download PDFInfo
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- CN103926971A CN103926971A CN201410163920.5A CN201410163920A CN103926971A CN 103926971 A CN103926971 A CN 103926971A CN 201410163920 A CN201410163920 A CN 201410163920A CN 103926971 A CN103926971 A CN 103926971A
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Abstract
The invention discloses an internal current reference circuit for a light sensor. The current reference circuit mainly solves the problem of accuracy in existing current reference. The current reference circuit comprises a zero-temperature coefficient current generation circuit (1), a current mirror circuit (2) and a channel modulation effect suppression circuit (3). Zero-temperature coefficient currents generated by the zero-temperature coefficient current generation circuit are output to the current mirror circuit. The current mirror circuit outputs the zero-temperature coefficient currents to the channel modulation effect suppression circuit after carrying out the mirroring process on the zero-temperature coefficient currents. A negative feedback loop in the channel modulation effect suppression circuit enables voltages at the output end A of the zero-temperature coefficient current generation circuit and the output end C of the current mirror circuit to be equal. The problem that changes of drain-source voltages of PMOS tubes in the current mirror circuit are inconsistent due to changes of power source voltages is solved, the channel modulation effect is suppressed, reference current IREF can not change along with changes of the power source voltages, and linear adjustment degree is improved.
Description
Technical field
The invention belongs to electronic circuit technology field, particularly a kind of current reference circuit, can be used in optical sensor.
Background technology
Optical sensor has very high precision, and it is the indispensable original paper in photovoltaic applications field.But because photocurrent is very small, be substantially all nA rank electric current.Therefore the high precision reference current that how to be designed for digital-to-analog conversion is that sensor design has been brought new challenge.
Fig. 1 has shown the current reference structure of traditional photo sensor chip internal, and reference voltage Vref is added in the anode of operational amplifier OP1, and operational amplifier OP1 produces reference current by voltage-drop loading by adopting negative feedback to connect on resistance R 1; The output terminal of operational amplifier is received on the grid of NMOS pipe M1, and negative terminal is received on the source class of M1, and resistance R 1 one ends are connected on M1 source class one end and are connected on ground; In the drain electrode of M1, be connected to a current-mirror structure, M2 and M3 form a current-mirror structure, and grid and the drain electrode of M2 are joined, the drain electrode of M1 and the drain electrode of M1 are joined, M2 drain electrode is joined with the drain electrode of M3, and M2 and M3 source class are connected on power supply, and reference current Iref flows out from the drain electrode of M3.In the current reference circuit of this traditional optical sensor, due to channel-length modulation, the variation with supply voltage changes the electric current of M3 mirror image, therefore electric current the altering a great deal with supply voltage producing, affect the raising of reference current precision, can not meet the requirement of high precision optical sensor to reference current.
Summary of the invention
The object of the invention is to for above-mentioned the deficiencies in the prior art, propose a kind of current reference circuit for optical sensor, to reduce the variable quantity of reference current with supply voltage, meet the accuracy requirement of optical sensor.
Realize technical thought of the present invention: by making to introduce feedback loop, the voltage of current mirror input end metal-oxide-semiconductor drain electrode is equated with the voltage of output terminal metal-oxide-semiconductor drain electrode, suppress channel modulation effect, thereby produce the reference current of high linear adjustment degree.
According to above-mentioned thinking, current reference circuit of the present invention comprises:
Zero-temperature coefficient electrical current produces circuit, for generation of zero-temperature coefficient electrical current;
Current mirroring circuit, for generation of image current;
It is characterized in that: between the zero-temperature coefficient electrical current generation output terminal of circuit and the output terminal of current mirroring circuit, be connected with channel modulation effect and suppress circuit, equate with the output end voltage that zero-temperature coefficient electrical current produces circuit for the output end voltage of controlling current mirroring circuit, to suppress the error that in current-mirror structure, channel modulation effect is brought, the impact of the variation of reduction supply voltage on reference current precision.
As preferably, described channel modulation effect suppresses circuit, comprises operational amplifier OP2 and PMOS pipe M4;
Described operational amplifier OP2, its output terminal is connected with the grid of PMOS pipe M4, its negative input is connected with the output terminal C of current mirroring circuit, its normal phase input end is connected with the output terminals A that zero-temperature coefficient electrical current produces circuit with current mirroring circuit input end B, form negative feedback structure, current mirroring circuit input end B and its output terminal C voltage are equated, to suppress the error that in current-mirror structure, channel modulation effect is brought;
The grid of described PMOS pipe M4 is connected to the output stage of operational amplifier OP2, its source electrode is connected to the output terminal C of current mirroring circuit, its drain electrode, as the output of current reference circuit, forms negative feedback structure with operational amplifier OP2, and exports the reference current of high linear adjustment degree from its drain electrode.
The present invention is owing to adding channel modulation effect to suppress circuit between current mirroring circuit and the output terminal of zero-temperature coefficient electrical current generation circuit, the drain voltage that makes current mirroring circuit and zero-temperature coefficient electrical current produce the metal-oxide-semiconductor of circuit output end equates, and its source class voltage all equals supply voltage, because the drain-source voltage of these two metal-oxide-semiconductors equates, thereby suppress channel modulation effect, reference current can not changed with the variation of supply voltage, ensured the stability of reference current.
Brief description of the drawings
Fig. 1 is conventional current reference circuit schematic diagram;
Fig. 2 is current reference schematic diagram of the present invention;
Fig. 3 is embodiments of the invention 1 schematic diagrams;
Fig. 4 is embodiments of the invention 2 schematic diagrams;
Embodiment
Below in conjunction with accompanying drawing and embodiment, the invention will be further described.
With reference to Fig. 2, the current reference circuit that the present invention is applied to optical sensor comprises: zero-temperature coefficient electrical current produces circuit 1, current mirroring circuit 2, channel modulation effect inhibition circuit 3;
Described zero-temperature coefficient electrical current produces circuit 1, is provided with an output terminals A, and output current signal is to current mirroring circuit 2;
Described current mirroring circuit 2, is provided with an input end B, an output terminal C; Wherein input end B is connected with the input end that channel modulation effect suppresses circuit 3 with the output terminals A that zero-temperature coefficient electrical current produces circuit 1; Output terminal C output voltage signal suppresses circuit 3 to channel modulation effect;
Described channel modulation effect suppresses circuit 3, comprises NMOS pipe M4 and operational amplifier OP2, wherein:
The grid of described PMOS pipe M4 is connected to the output stage of operational amplifier OP2, and its source electrode is connected to the output terminal C of current mirroring circuit 2, the output that its drain electrode is current reference circuit;
Described operational amplifier OP2, its negative input is connected with the output terminal C of current mirroring circuit 2, its normal phase input end is connected with the output terminals A that zero-temperature coefficient electrical current produces circuit 1 with current mirroring circuit 2 input end B, form negative feedback structure, input end B and the output terminal C voltage of current mirroring circuit 2 are equated, eliminate because the PMOS pipe drain-source voltage in the current mirroring circuit that mains voltage variations causes changes inconsistent problem, thereby suppress channel modulation effect, reference current is not changed with mains voltage variations, improved linear adjustment degree.
For theory diagram shown in Fig. 2, the present invention provides following two kinds of embodiment:
Embodiment 1
With reference to Fig. 3, the included zero-temperature coefficient electrical current of current reference circuit of the present invention produces circuit 1, current mirroring circuit 2 and channel modulation effect and suppresses circuit 3, and its particular circuit configurations is as follows:
Described zero-temperature coefficient electrical current produces circuit 1, and it is by operational amplifier OP3, and NMOS manages M5, and positive temperature coefficient resistor R2 and negative temperature coefficient resister R3 form; The resistance R 2 of this positive temperature coefficient (PTC) is connected with negative temperature coefficient resister R3, forms zero-temperature coefficient resistance; The source electrode of the NOMS pipe M5 that zero-temperature coefficient resistance one end is linked to, one end is connected to ground; The negative-phase input of this operational amplifier OP3 is connected to the source electrode of NMOS pipe M5, its normal phase input end is connected to the input end Vref of current reference circuit, this input end Vref is connected with zero-temperature coefficient reference voltage, form zero-temperature coefficient voltage generation circuit, its output terminal is connected with the grid of NMOS pipe M5; The grid of this NMOS pipe M5 is connected with the output terminal of operational amplifier OP3, and its drain electrode is connected with the input end of current mirroring circuit 2, and its source electrode is connected with zero-temperature coefficient resistance with the negative-phase input of operational amplifier OP3; This NMOS pipe forms negative-feedback circuit with operational amplifier OP3, and the voltage of zero-temperature coefficient is added on zero-temperature coefficient resistance, produces zero-temperature coefficient electrical current.
Described current mirroring circuit 2, it is made up of two PMOS pipes M6, M7, the grid of these two PMOS pipes is connected, form current-mirror structure, the drain electrode of this PMOS pipe M7 is output terminal, the drain electrode of this PMOS pipe M6 is connected with the output stage that zero-temperature coefficient electrical current produces circuit 1, zero-temperature coefficient electrical current is produced to zero-temperature coefficient electrical current mirror image that circuit 1 produces and manages to PMOS the drain electrode of M7.
Described channel modulation effect suppresses circuit 3, comprises operational amplifier OP2 and PMOS pipe M4.This operational amplifier OP2, its output terminal is connected with the grid of PMOS pipe M4, its negative input is connected with the drain electrode of the PMOS pipe M7 of current mirroring circuit 2, its normal phase input end is connected with the drain electrode of the PMOS pipe M6 of current mirroring circuit 2, form negative feedback structure, the PMOS pipe M7 of current mirroring circuit 2 and the drain voltage of PMOS pipe M6 are equated, to suppress the error that in current-mirror structure, channel modulation effect is brought; The grid of this PMOS pipe M4 is connected to the output stage of operational amplifier OP2, and its source electrode is connected to the drain electrode of the PMOS pipe M7 of current mirroring circuit 2, and its drain electrode is as the output of current reference circuit.This PMOS pipe M4 and operational amplifier OP2 form negative feedback structure, and export the reference current of high linear adjustment degree from its drain electrode.
The principle of work of the present embodiment 1 is:
The source electrode that produces the NMOS pipe M5 of circuit 1 from zero-temperature coefficient electrical current is input to zero-temperature coefficient electrical current the drain electrode of the PMOS pipe M6 of current mirroring circuit 2, manages the drain electrode output reference current of M7 from the PMOS of current mirroring circuit 2; By adding channel modulation effect to suppress circuit 3 between the drain electrode of the PMOS pipe M7 at current mirroring circuit 2 and the source electrode of the NMOS pipe M5 of zero-temperature coefficient electrical current generation circuit 1, make current mirroring circuit 2 and zero-temperature coefficient electrical current produce the PMOS pipe M6 of circuit 1 equal with the drain voltage of M7, and the source voltage of PMOS pipe M6 and M7 equate; Because the drain-source voltage of these two PMOS pipes equates, eliminate because the current mirroring circuit that mains voltage variations causes and zero-temperature coefficient electrical current produce the PMOS pipe M6 of circuit and the drain-source voltage of M7 changes inconsistent problem, thereby suppress channel modulation effect, reference current is not changed with mains voltage variations, improved linear adjustment degree.
Embodiment 2
With reference to Fig. 4, the included zero-temperature coefficient electrical current of the current reference circuit of the present embodiment produces circuit 1, current mirroring circuit 2 and channel modulation effect and suppresses circuit 3, and its particular circuit configurations is as follows:
Described zero-temperature coefficient electrical current produces circuit 1, comprises PMOS pipe M10, M11, M12, M13, NMOS pipe M8, M9, M10, resistance R 4, R5, capacitor C 1 and current source I1.This PMOS pipe M10, M11, M12, M13 and NMOS pipe M8, M9, form cascade operational amplifier OP4.Wherein:
NMOS pipe M8 is connected with the source electrode of M10 and forms differential pair, be connected to current source I1, and the grid of these two NMOS pipes is respectively as positive input and the negative input of operational amplifier OP4, and this positive input is connected with the grid of NMOS pipe M10 with the inner zero-temperature coefficient voltage of optical sensor Vref respectively with negative input;
NMOS pipe M8 is connected with the drain electrode of PMOS pipe M10 and M11 respectively with the drain electrode of M10;
The drain electrode of NMOS pipe M9 is as the output stage of operational amplifier OP4;
PMOS pipe M12 is connected with the grid of M13, forms active electric current mirror structure;
PMOS pipe M12 is connected with the source electrode of M13 and the input power VIN of optical sensor, and the drain electrode of PMOS pipe M12 and M13 is managed M10 and is connected with the drain electrode of M11 with PMOS respectively, and PMOS pipe M10 is connected with the grid of M11, forms the load of active electric current mirror; This PMOS pipe M10, M11, M12, M13 form common-source common-gate current mirror structure;
Capacitor C 1 is connected with the output stage of operational amplifier OP4, forms the output load of operational amplifier OP4;
NMOS manages M14, and its drain electrode is connected with PMOS pipe M15, and its source electrode is connected with zero-temperature coefficient resistance R 4 one end, and its grid is connected with the output terminal of operational amplifier OP4, forms negative feedback structure, and zero-temperature coefficient voltage Vref is carried in resistance R 4; These zero-temperature coefficient resistance R 4 one end are connected with the source electrode of NOMS pipe M14, and the other end is connected to ground.
Described current mirroring circuit 2, comprises PMOS pipe M15, M16, M17, M18, M19, M22, M23, M24, M25, M26, and NMOS manages M20, M21, wherein:
The grid of PMOS pipe M18, M19, M23, M22 is connected, and forms current-mirror structure;
The drain electrode of PMOS pipe M19, M22 is connected with the drain electrode of NMOS pipe M20, M21 respectively, and PMOS manages the source electrode of M19, M22 and is connected with the drain electrode of PMOS pipe M18, M23 respectively;
The grid of NMOS pipe M20, M21 is connected, and forms current-mirror structure;
PMOS pipe M18, M19, M23, M22, NMOS pipe M20, M21 form auto bias circuit, for common-source common-gate current mirror provides direct current biasing;
The grid of PMOS pipe M16, M17, M24, M25 is connected, form current-mirror structure, the drain electrode that PMOS manages M16 and M25 is connected with the source electrode of PMOS pipe M15, M26 respectively, and the drain electrode of PMOS pipe M15, M26 produces the drain electrode of NMOS pipe M5 of circuit 1 with zero-temperature coefficient electrical current respectively and the source electrode of the PMOS pipe M4 of channel modulation effect inhibition circuit 3 is connected; Its source electrode is connected with PMOS pipe M16, M25 source electrode respectively, forms the load of common-source common-gate current mirror.
Described channel modulation effect suppresses circuit 3, comprises PMOS pipe M27, M29, M30, M31, M32, and NMOS manages M28, M33, current source I2 and capacitor C 2, wherein:
PMOS pipe M29, M30, M31, M32, NMOS pipe M28, M33 form cascade operational amplifier OP5;
NMOS pipe M28 is connected with the source electrode of M33 and forms differential pair, be connected to current source I2, and the grid of these two NMOS pipes is respectively as positive input and the negative input of operational amplifier OP5, and this positive input is connected with the PMOS pipe M16 of current mirroring circuit 2 and the drain electrode of M25 respectively with negative input; NMOS pipe M28 is connected with the drain electrode of PMOS pipe M29 and M32 respectively with the drain electrode of M33; The drain electrode of NMOS pipe M33 is as the output stage of operational amplifier OP5;
PMOS pipe M30 is connected with the grid of M31, forms active electric current mirror structure; PMOS pipe M30 and the source electrode of M31 and the input power VIN of optical sensor is connected; The drain electrode of PMOS pipe M30 is connected with the drain electrode of PMOS pipe M29 respectively; ; The drain electrode of PMOS pipe M31 is connected with the drain electrode of PMOS pipe M32 respectively;
PMOS pipe M29 is connected with the grid of M32, forms the load of active electric current mirror; PMOS pipe M29, M30, M31, M32 form common-source common-gate current mirror structure;
Capacitor C 2 is connected with the output stage of operational amplifier OP5, forms the output load of operational amplifier OP5;
The grid of NMOS pipe M27 is connected with the output terminal of operational amplifier OP5, forms negative feedback structure, and NMOS pipe M28 is equated with the grid voltage of M33.
The principle of work of the present embodiment 2 is:
The source electrode that produces the NMOS pipe M14 of circuit 1 from zero-temperature coefficient electrical current is input to zero-temperature coefficient electrical current the drain electrode of the PMOS pipe M15 of current mirroring circuit 2, manages the drain electrode output reference current of M25 from the PMOS of current mirroring circuit 2; By adding channel modulation effect to suppress circuit 3 between the drain electrode of the PMOS pipe M25 at current mirroring circuit 2 and the source electrode of the NMOS pipe M14 of zero-temperature coefficient electrical current generation circuit 1, make current mirroring circuit 2 and zero-temperature coefficient electrical current produce the PMOS pipe M16 of circuit 1 equal with the drain voltage of M25, and the source voltage of PMOS pipe M16 and M25 equate; Because the drain-source voltage of these two PMOS pipes equates, eliminate because the current mirroring circuit that mains voltage variations causes and zero-temperature coefficient electrical current produce the PMOS pipe M16 of circuit and the drain-source voltage of M25 changes inconsistent problem, thereby suppress channel modulation effect, reference current is not changed with mains voltage variations, improved linear adjustment degree.
Below be only two preferred example of the present invention, do not form any limitation of the invention, obviously, under design of the present invention, can carry out different changes and improvement to its circuit, but these are all at the row of protection of the present invention.
Claims (6)
1. for a current reference circuit for optical sensor, comprising:
Zero-temperature coefficient electrical current produces circuit (1), for generation of zero-temperature coefficient electrical current;
Current mirroring circuit (2), for generation of image current;
It is characterized in that: produce at zero-temperature coefficient electrical current between output terminal and the output terminal of current mirroring circuit (2) of circuit (1) and be connected with channel modulation effect inhibition circuit (3), the output end voltage that is used for controlling current mirroring circuit (2) equates with the output end voltage that zero-temperature coefficient electrical current produces circuit (1), to suppress the error that in current-mirror structure, channel modulation effect is brought, the impact of the variation of reduction supply voltage on reference current precision.
2. according to the current reference circuit for optical sensor described in claims 1, it is characterized in that channel modulation effect suppresses circuit (3), comprise operational amplifier OP2 and PMOS pipe M4;
Described operational amplifier OP2, its output terminal is connected with the grid of PMOS pipe M4, its negative input is connected with the output terminal C of current mirroring circuit (2), its normal phase input end is connected with the output terminals A that zero-temperature coefficient electrical current produces circuit (1) with current mirroring circuit (2) input end B, form negative feedback structure, current mirroring circuit (2) input end B and its output terminal C voltage are equated, to suppress the error that in current-mirror structure, channel modulation effect is brought;
The grid of described PMOS pipe M4 is connected to the output stage of operational amplifier OP2, its source electrode is connected to the output terminal C of current mirroring circuit (2), its drain electrode is as the output of current reference circuit, form negative feedback structure with operational amplifier OP2, and export the reference current of high linear adjustment degree from its drain electrode.
3. according to the current reference circuit for optical sensor described in claims 1, it is characterized in that: zero-temperature coefficient electrical current produces one of structure of circuit (1) and is, adopts operational amplifier OP3, and NMOS manages M5, positive temperature coefficient resistor R2 and negative temperature coefficient resister R3 form
The resistance R 2 of described positive temperature coefficient (PTC) is connected with negative temperature coefficient resister R3, forms zero-temperature coefficient resistance; The source electrode of the NOMS pipe M5 that zero-temperature coefficient resistance one end is linked to, one end is connected to ground;
The negative-phase input of described operational amplifier OP3 is connected to the source electrode of NMOS pipe M5, its normal phase input end is connected to the input end Vref of current reference circuit, this input end Vref is connected with zero-temperature coefficient reference voltage, form zero-temperature coefficient voltage generation circuit, its output terminal is connected with the grid of NMOS pipe M5;
Described NMOS pipe M5 grid is connected with the output terminal of operational amplifier OP3, and its drain electrode is connected with the input end of current mirroring circuit (2), and its source electrode is connected with zero-temperature coefficient resistance with the negative-phase input of operational amplifier OP3; Itself and operational amplifier OP3 form negative-feedback circuit, and the voltage of zero-temperature coefficient is added on zero-temperature coefficient resistance, produce zero-temperature coefficient electrical current.
4. according to the current reference circuit for optical sensor described in claims 1, it is characterized in that: two of the structure of zero-temperature coefficient electrical current generation circuit (1) is: adopt PMOS pipe M10, M11, M12, M13, NMOS pipe M8, M9, M10, zero-temperature coefficient resistance R 4, capacitor C 1 and current source I1 composition;
Described PMOS pipe M10, M11, M12, M13 and NMOS pipe M8, M9, form cascade operational amplifier OP4;
Described NMOS pipe M8 is connected with the source electrode of M10 and forms differential pair, be connected to current source I1, and the grid of these two NMOS pipes is respectively as positive input and the negative input of operational amplifier OP4, and this positive input is connected with the grid of NMOS pipe M10 with the inner zero-temperature coefficient voltage of optical sensor Vref respectively with negative input; NMOS pipe M8 is connected with the drain electrode of PMOS pipe M10 and M11 respectively with the drain electrode of M10; The drain electrode of NMOS pipe M9 is as the output stage of operational amplifier OP4;
Described PMOS pipe M12 is connected with the grid of M13, forms active electric current mirror structure; PMOS pipe M12 is connected with the source electrode of M13 and the input power VIN of optical sensor; The drain electrode of PMOS pipe M12 and M13 is connected with the drain electrode of M11 respectively at PMOS pipe M10;
Described PMOS pipe M10 is connected with the grid of M11, forms the load of active electric current mirror;
Above-mentioned PMOS pipe M10, M11, M12, M13 form common-source common-gate current mirror structure;
Described capacitor C 1 is connected with the output stage of operational amplifier OP4, forms the output load of operational amplifier OP4;
Described NMOS pipe M14, its drain electrode is connected with PMOS pipe M15; Its source electrode is connected with zero-temperature coefficient resistance R 4 one end; Its grid is connected with the output terminal of operational amplifier OP4, forms negative feedback structure, and zero-temperature coefficient voltage Vref is carried in resistance R 4;
Described zero-temperature coefficient resistance R 4 one end are connected with the source electrode of NOMS pipe M14, and the other end is connected to ground.
5. according to the current reference circuit for optical sensor described in claims 1, it is characterized in that: one of structure of current mirroring circuit (2) is: adopt two PMOS pipe M6, M7 compositions, the grid of these two PMOS pipes is connected, form current-mirror structure, the drain electrode of this PMOS pipe M7 is output terminal, the drain electrode of this PMOS pipe M6 is connected with the output stage that zero-temperature coefficient electrical current produces circuit (1), zero-temperature coefficient electrical current is produced to the zero-temperature coefficient electrical current mirror image of circuit (1) generation to the drain electrode of PMOS pipe M7.
6. the current reference circuit for optical sensor according to claim 1, it is characterized in that: two of the structure of current mirroring circuit (2) is: adopt PMOS pipe M15, M16, M17, M18, M19, M22, M23, M24, M25, M26, and NMOS pipe M20, M21 composition;
The grid of described PMOS pipe M18, M19, M23, M22 is connected, and forms current-mirror structure; The drain electrode of PMOS pipe M19, M22 is connected with the drain electrode of NMOS pipe M20, M21 respectively; PMOS manages the source electrode of M19, M22 and is connected with the drain electrode of PMOS pipe M18, M23 respectively;
The grid of described NMOS pipe M20, M21 is connected, and forms current-mirror structure;
Above-mentioned PMOS pipe M18, M19, M23, M22, NMOS pipe M20, M21 form auto bias circuit, for common-source common-gate current mirror provides direct current biasing;
The grid of described PMOS pipe M16, M17, M24, M25 is connected, and forms current-mirror structure; The drain electrode of PMOS pipe M16 and M25 is connected with the source electrode of PMOS pipe M15, M26 respectively;
Described PMOS pipe M15, M26, its drain electrode produces the output terminal of circuit (1) with zero-temperature coefficient electrical current respectively, the input end that channel modulation effect suppresses circuit (3) is connected; Its source electrode is connected with PMOS pipe M16, M25 source electrode respectively, forms the load of common-source common-gate current mirror.
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| CN201410163920.5A CN103926971A (en) | 2014-04-22 | 2014-04-22 | Current reference circuit for light sensor |
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| CN201410163920.5A CN103926971A (en) | 2014-04-22 | 2014-04-22 | Current reference circuit for light sensor |
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Application publication date: 20140716 |