CN201233548Y - Voltage-current conversion circuit - Google Patents

Voltage-current conversion circuit Download PDF

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Publication number
CN201233548Y
CN201233548Y CNU2008200958364U CN200820095836U CN201233548Y CN 201233548 Y CN201233548 Y CN 201233548Y CN U2008200958364 U CNU2008200958364 U CN U2008200958364U CN 200820095836 U CN200820095836 U CN 200820095836U CN 201233548 Y CN201233548 Y CN 201233548Y
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CN
China
Prior art keywords
effect transistor
current
operational amplifier
grid
voltage
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CNU2008200958364U
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Chinese (zh)
Inventor
孔令荣
熊立志
武岳山
刘岩
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深圳市远望谷信息技术股份有限公司
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Abstract

The utility model discloses a voltage/current converting circuit, which is used for solving the technical problems that the error of the output current of the voltage/current converting circuit is required to be reduced, and the accuracy of the output current of a current supply is required to be improved. The non-inverting input end of a first operational amplifier of the utility model is connected with the drain terminal of a first FET (field effect transistor), and connected to the upper end of a first resistor; the lower end of the first resistor is grounded; the input voltage is input by the inverting input end of the first operational amplifier; the output end of the first operational amplifier is connected with the grid of the first FET; the source end of the first FET is connected with the input end of a current mirror; and the output end of the current mirror is the output end of the voltage/current converting circuit. Compared with the prior art, the voltage/current converting circuit can convert an input voltage into an accurate current through the negative feedback circuit of the resistor and the operational amplifier, and output a required image current through the current mirror, thereby improving the mirror image accuracy of the current mirror, increasing the output impedance of a current source, and improving the output current accuracy of the current source.

Description

Voltage-current converter circuit
Technical field
The utility model relates to the voltage-current converter circuit of a kind of current output circuit, particularly a kind of current output circuit.
Background technology
Voltage-the current converter circuit of prior art because the raceway groove mudulation effect causes the error of image current, the factor that Power Supply Rejection Ratio is relatively poor, output impedance is less, can't improve voltage-current converter circuit precision.And the variation of the load of current source or output voltage can be coupled to the output terminal of operational amplifier, makes its antijamming capability variation, thereby influences its output current precision.As shown in Figure 1, the principle of work of the voltage-current converter circuit of prior art is as follows: operational amplifier A MP1 and transistor MP1 and resistance R 1 constitute the V/I change-over circuit of high linearity, MP2, MN1, MN2, MP3 constitute biasing circuit, and MP4 and MP5 constitute the current source output circuit of casoade structure.In the V/I change-over circuit,, make the input voltage V of the end of oppisite phase of voltage on the resistance R 1 and amplifier by the negative feedback of operational amplifier A MP1 InEquate, therefore, the electric current I on the R1 R1For:
I R1=V in/R
Wherein, R is the resistance value of resistance R 1.Because MP4 and MP1 have common grid driving voltage, they constitute current-mirror structure, so the electric current of MP4 energy mirror image MP1, and from I OutEnd output.Theoretically, the electric current that flows through the drain electrode of MP4 and MP1 equates, so the output current of current source is:
I out=I R1=V in/R
The output impedance R of current source oFor:
R o=g m,mp?5r o,mp5r o,mp4
Wherein, g M, mp5And r O, mp5Be mutual conductance and the conducting resistance of MP5, r O, mp4It is the conducting resistance of MP4.
Summary of the invention
The purpose of this utility model has provided a kind of voltage-current converter circuit, and the technical matters that solve is the error that reduces voltage-current conversion circuit output current, improves the output current precision of current source.
The utility model is by the following technical solutions: a kind of voltage-current converter circuit, comprise first operational amplifier, first field effect transistor and first resistance, the in-phase input end of first operational amplifier is connected with the first field effect transistor drain terminal, and be connected to the upper end of first resistance, the lower end ground connection of first resistance, input voltage is by the inverting input input of first operational amplifier, the output terminal of first operational amplifier is connected with first fet gate, the input end of the source termination current mirror of described first field effect transistor, the current mirror output terminal is the output terminal of voltage-current converter circuit.
Current mirror of the present utility model is by second operational amplifier and second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor constitutes, the 3rd fet gate, the second operational amplifier in-phase input end links to each other with the leakage level with second fet gate, and be connected with the first field effect transistor source end, the source electrode of second field effect transistor, the source electrode of the 3rd field effect transistor connects power supply, the 3rd field effect transistor drain terminal links to each other with the 4th field effect transistor source end, and be connected to the second operational amplifier inverting input, the 4th fet gate links to each other with second operational amplifier output terminal, and the drain electrode of the 4th field effect transistor is output terminal.
First operational amplifier of the present utility model is made of the 5th to the 9th field effect transistor, the drain electrode of the 8th field effect transistor, the grid of the 5th fet gate and the 6th field effect transistor, drain electrode links to each other, the source electrode of the 5th field effect transistor source electrode and the 6th field effect transistor connects power supply, the 7th fet gate is connected with input signal as the inverting input of first operational amplifier, the 5th field effect transistor drain electrode output terminal that drain electrode is connected as first operational amplifier with the 7th field effect transistor links to each other with the grid of first field effect transistor, the 8th fet gate links to each other with the drain electrode of first field effect transistor as the in-phase input end of first operational amplifier, and the 7th field effect transistor source electrode links to each other with the drain electrode of the 9th field effect transistor with the 8th field effect transistor source electrode.
Second operational amplifier of the present utility model is made of the tenth to the 16 field effect transistor, the drain electrode of the 13 field effect transistor, the tenth fet gate links to each other with drain electrode with the grid of the 11 field effect transistor, the source electrode of the tenth field effect transistor source electrode and the 11 field effect transistor connects power supply, the 12 field effect transistor source electrode links to each other with the drain electrode of the 14 field effect transistor with the 13 field effect transistor source electrode, the 14 field effect transistor source ground, grid connects input current, and the output terminal that the drain electrode of the tenth field effect transistor and the 12 field effect transistor links to each other as second operational amplifier links to each other with the 16 fet gate; The drain electrode of the 16 field effect transistor connects power supply, the source electrode of the 16 field effect transistor level transfer level that drain electrode links to each other and constitutes second operational amplifier output terminal with the 15 field effect transistor, and link to each other with the 4th fet gate, the 15 fet gate connects input current, the 15 field effect transistor source ground.
The 4th field effect transistor drain electrode of the present utility model connects output terminal, the drain electrode of the 4th field effect transistor source electrode and the 3rd field effect transistor links to each other and is connected with the 12 fet gate, the grid of the first field effect transistor source electrode, second field effect transistor links to each other with drain electrode, the 3rd fet gate and is connected with the 13 fet gate, and the source electrode of the source electrode of second field effect transistor and the 3rd field effect transistor connects power supply.
The bias voltage of second operational amplifier of the present utility model is provided by the 17 field effect transistor, and the grid of the 17 field effect transistor and drain electrode connect input current, source ground.
The in-phase input end of first operational amplifier of the present utility model and output terminal are connected with first electric capacity.
The 9th field effect transistor source ground of the present utility model, grid connects input current, for first operational amplifier provides bias current.
The utility model compared with prior art, negative-feedback circuit by resistance and operational amplifier, input voltage is converted to precise current, and by the required image current of current with high accuracy mirror output, improve the mirror image precision of current mirror and the output impedance that increases current source, reduce the interference of surrounding environment, reduce the error of voltage-current conversion circuit output current, improved the output current precision of current source voltage-current converter circuit.
Description of drawings
Fig. 1 is the voltage-current converter circuit structural drawing of prior art.
Fig. 2 is voltage of the present utility model-current converter circuit schematic diagram.
Fig. 3 is the circuit structure diagram of Fig. 2.
Fig. 4 is the circuit connection diagram of Fig. 3.
Fig. 5 is the contrast test curve map of the mirror image error and the temperature variation relation of prior art and current mirror of the present utility model.
Fig. 6 is the curve map of the mirror image error of prior art and output current of the present utility model with the load variations of current source output terminal.
Fig. 7 is the contrast test curve map of the Power Supply Rejection Ratio of prior art and the utility model circuit output end.
Embodiment
Below in conjunction with drawings and Examples the utility model is described in further detail.
As shown in Figure 2, the utility model voltage-current converter circuit comprises the first operational amplifier A MP1, the first field effect transistor MP1, first resistance R 1 and current with high accuracy mirror I1.The first operational amplifier A MP1, the first field effect transistor MP1, first resistance R 1 are electrically connected, and constitute voltage-current conversion unit.Input voltage vin is by the inverting input input of the first operational amplifier A MP1, and the in-phase input end of the first operational amplifier A MP1 is connected with the first field effect transistor MP1 drain terminal, and is connected to the upper end of first resistance R 1; The lower end ground connection of first resistance R 1; The output terminal of the first operational amplifier A MP1 is connected with the first field effect transistor MP1 grid, the input end of the source termination current mirror I1 of the first field effect transistor MP1, current mirror I1 output termination Iout.
By the negative feedback of the first operational amplifier A MP1, the voltage on first resistance R 1 is equated with the input voltage vin of the end of oppisite phase of first operational amplifier, therefore, the electric current I on the R1 R1For:
I R1=V in/R
Wherein, R is the resistance value of first resistance R 1, requires its temperature drift coefficient very little, and therefore first resistance R 1 adopts precision thin-film resistor.The current with high accuracy mirror I1 that the utility model adopts can mirror image I R1Electric current, and from Iout end output, so the output current of current source is:
I out=I R1=V in/R
Voltage-current converter circuit of the present utility model can convert input voltage vin to be directly proportional with it electric current output.
As shown in Figure 3, current mirror I1 is electrically connected to form by the second operational amplifier A MP2 and the second field effect transistor MP2, the 3rd field effect transistor MP3 and the 4th field effect transistor MP4.The 3rd field effect transistor MP3 grid, the second operational amplifier A MP2 in-phase input end links to each other with the second field effect transistor MP2 grid, leakage level, and is connected with the first field effect transistor MP1 source end; The source electrode of the source electrode of the second field effect transistor MP2, the 3rd field effect transistor MP3 meets power supply Vdd; The 3rd field effect transistor MP3 drain terminal links to each other with the 4th field effect transistor MP4 source end, and is connected to the second operational amplifier A MP2 inverting input.The 4th field effect transistor MP4 grid links to each other with the second operational amplifier A MP2 output terminal.The 4th field effect transistor MP4 drain electrode meets output terminal Iout.
Current mirror I1 is by the buffer action of the 4th field effect transistor MP4 and the second field effect transistor MP2, the load circuit of voltage-current converter circuit and current source is isolated, and isolate with supply voltage, improved Power Supply Rejection Ratio and reduced the interference of environment voltage-current converter circuit; The negative feedback of the second operational amplifier A MP2 equates source-drain voltage of the second field effect transistor MP2 and the 3rd field effect transistor MP3, has reduced current mirror because the error of the image current that the raceway groove mudulation effect causes; The second operational amplifier A MP2 and the 4th field effect transistor MP4 constitute gain and improve structure, increased the output impedance of current source, therefore current mirror I1 has very strong resistivity to the variation of load voltage and the interference of load end, and the various interference of load end are very little to the influence of the image current of current mirror.
Current source output impedance R OFor:
R o=A 2g m,mp4r o,mp4r o,mp3
A wherein 2Be the gain of the second operational amplifier A MP2, g M, m4And r O, m4Be mutual conductance and the conducting resistance of the 4th field effect transistor M4, r O, m3It is the conducting resistance of the 3rd field effect transistor M3.Compare with current source output impedance in known voltage-current converter circuit structure and to have increased A 2Doubly.
Owing to adopted the technical scheme of above-mentioned current mirror I1 structure, reduced current mirror because the error of the image current that the raceway groove mudulation effect causes, improved Power Supply Rejection Ratio and reduced the interference of environment the V/I change-over circuit, increased the output impedance of current source, improve its antijamming capability, thereby improved the conversion accuracy of voltage-current converter circuit.
As most preferred embodiment, as shown in Figure 4, voltage-current converter circuit of the present utility model is made up of the first to the 17 field effect transistor M1-M17, first resistance R 1, first capacitor C 1.
The the 5th to the 9th field effect transistor M5-M9 described first operational amplifier A MP1 that is electrically connected to form.The 8th field effect transistor M8 drain electrode, the grid of the 5th field effect transistor M5 grid and the 6th field effect transistor M6, drain electrode links to each other, the source electrode of the 5th field effect transistor M5 source electrode and the 6th field effect transistor M6 meets power supply Vdd, the 7th field effect transistor M7 grid is connected with input signal Vin as the inverting input of the first operational amplifier A MP1, the 5th field effect transistor M5 drain electrode output terminal that drain electrode is connected as operational amplifier A MP1 with the 7th field effect transistor M7 links to each other with the grid of the first field effect transistor M1, the 8th field effect transistor M8 grid links to each other with the drain electrode of the first field effect transistor M1 as the in-phase input end of the first operational amplifier A MP1, constitutes a feedback network.First capacitor C, 1 two ends link to each other with output terminal with the in-phase input end of operational amplifier A MP1 respectively, play the frequency compensation effect, make the feedback circuit working stability, the 7th field effect transistor M7 source electrode links to each other with the 9th field effect transistor M9 drain electrode with the 8th field effect transistor M8 source electrode, the 9th field effect transistor M9 source ground, grid meets input current Ibias, for the first operational amplifier A MP1 provides bias current.
The the tenth to the 14 field effect transistor M10-M16 described second operational amplifier A MP2 that is electrically connected to form.The 13 field effect transistor M13 drain electrode, the tenth field effect transistor M10 grid links to each other with drain electrode with the grid of the 11 field effect transistor M11, the source electrode of the tenth field effect transistor M10 source electrode and the 11 field effect transistor M11 meets power supply Vdd, the 12 field effect transistor M12 source electrode links to each other with the 14 field effect transistor M14 drain electrode with the 13 field effect transistor M13 source electrode, the 14 field effect transistor M14 source ground, grid meets input current Ibias, for the second operational amplifier A MP2 provides bias current, the output terminal that the tenth field effect transistor M10 and the 12 field effect transistor M12 drain electrode links to each other as the second operational amplifier A MP2 links to each other with the 16 field effect transistor M16 grid.The drain electrode of the 16 field effect transistor M16 meets power supply Vdd, the level transfer grade that the source electrode of the 16 field effect transistor M16 and the 15 field effect transistor M15 drain electrode links to each other and constitutes the second operational amplifier A MP2 output terminal, and link to each other with the 4th field effect transistor M4 grid.The 15 field effect transistor M15 grid meets input current Ibias, the 15 field effect transistor M15 source ground.
The 4th field effect transistor M4 drain electrode meets output terminal Iout.The drain electrode of the 4th field effect transistor M4 source electrode and the 3rd field effect transistor M3 links to each other and is connected with the 12 field effect transistor M12 grid.The grid of the first field effect transistor M1 source electrode, the second field effect transistor M2 links to each other with drain electrode, the 3rd field effect transistor M3 grid and is connected with the 13 field effect transistor M13 grid.The source electrode of the source electrode of the second field effect transistor M2 and the 3rd field effect transistor M3 meets power supply Vdd.First field effect transistor M1 drain electrode connects the upper end of first resistance R 1, the lower end ground connection of first resistance R 1.The grid of the 17 field effect transistor M17 and drain electrode meet Ibias, and Ibias provides bias current for circuit, the source ground of the 17 field effect transistor M17.
Fig. 5~Fig. 7 is the circuit shown in Figure 4 after improving preceding circuit shown in Figure 1 and improving, and compares the result of test under standard 0.35 μ m CMOS technology with the HSPICE emulation tool.
As shown in Figure 5, mirror image error and temperature variation relation to current mirror compare test, at supply voltage is 3V, when the input current of V/I change-over circuit is 1 μ A, in temperature in-20 ℃ to 85 ℃ scope, the scope of the temperature variant mirror image error of circuit before improving is from 7.2% to 11.5%, and mirror image error change amount is 4.3%; The scope of the temperature variant mirror image error of the circuit after the improvement is from 0.81% to 1.14%, and mirror image error change amount is 0.33%.As seen, the mirror image error of the current mirror after the improvement reduces 10 times approximately, and the precision of circuit aspect temperature variation improved 13 times approximately.
As shown in Figure 6, the circuit before improving is from 8.95% to 9.61% with the scope of the mirror image error of load variations, and mirror image error change amount is 0.66%; Circuit after the improvement is from 0.938% to 0.929% with the scope of the mirror image error of load variations, and mirror image error change amount is 0.09%.As seen, the precision of the circuit after the improvement aspect load variations improved 7 times approximately.
As shown in Figure 7, contrast to the Power Supply Rejection Ratio PSRR (Power supply rejection ratio) of circuit output end before and after the improvement is tested, Power Supply Rejection Ratio before improving when low frequency is-33.7dB, the Power Supply Rejection Ratio of the circuit output end after the improvement is 42.3dB, and the Power Supply Rejection Ratio of improved circuit improves significantly.
Accurate electric current of source end output of the first field effect transistor MP1 of the present utility model, and by current mirror I1 outgoing mirror image current.Current mirror I1 is made of the second operational amplifier A MP2 and the second field effect transistor MP, the 3rd field effect transistor MP3, the 4th field effect transistor MP4.The buffer action of the 4th field effect transistor MP4 and the second field effect transistor MP2 is isolated the load circuit of V/I change-over circuit and current source, and is isolated with supply voltage, has improved Power Supply Rejection Ratio and has reduced the interference of environment to the V/I change-over circuit.The negative feedback of the second operational amplifier A MP2 is close source-drain voltage of the second field effect transistor MP2 and the 3rd field effect transistor MP3, has reduced current mirror because the error of the image current that the raceway groove mudulation effect causes.The second operational amplifier A MP2 and the 4th field effect transistor MP4 constitute gain and improve structure, increased the output impedance of current source, therefore current mirror I1 has very strong resistivity to the variation of load voltage and the interference of load end, and the various interference of load end are very little to the influence of the image current of current mirror.
Current source output impedance R OBecome
R o=A 2g m,mp4r o,mp4r o,mp3
A wherein 2Be the gain of the second operational amplifier A MP2, g M, m4And r O, m4Be mutual conductance and the conducting resistance of the 4th field effect transistor M4, r O, m3It is the conducting resistance of the 3rd field effect transistor M3.Compare with current source output impedance in known voltage-current converter circuit structure and to have increased A 2Doubly.
Owing to adopted technique scheme, reduced current mirror because the error of the image current that the raceway groove mudulation effect causes, improved Power Supply Rejection Ratio and reduced the interference of environment the V/I change-over circuit, increased the output impedance of current source, improve its antijamming capability, thereby improved the conversion accuracy of voltage-current converter circuit.
The mirror image error of current mirror by Error = ( I out - I in ) * 100 % I in Determine.

Claims (8)

1. voltage-current converter circuit, comprise first operational amplifier (AMP1), first field effect transistor (MP1) and first resistance (R1), the in-phase input end of first operational amplifier (AMP1) is connected with first field effect transistor (MP1) drain terminal, and be connected to the upper end of first resistance (R1), the lower end ground connection of first resistance (R1), input voltage is by the inverting input input of first operational amplifier (AMP1), the output terminal of first operational amplifier (AMP1) is connected with first field effect transistor (MP1) grid, it is characterized in that: the input end of the source termination current mirror (I1) of described first field effect transistor (MP1), current mirror (I1) output terminal is the output terminal of voltage-current converter circuit.
2. voltage-current converter circuit according to claim 1, it is characterized in that: described current mirror (I1) is by second operational amplifier (AMP2) and second field effect transistor (MP2), the 3rd field effect transistor (MP3), the 4th field effect transistor (MP4) constitutes, the 3rd field effect transistor (MP3) grid, second operational amplifier (AMP2) in-phase input end links to each other with the leakage level with second field effect transistor (MP2) grid, and be connected with first field effect transistor (MP1) source end, the source electrode of second field effect transistor (MP2), the source electrode of the 3rd field effect transistor (MP3) connects power supply, the 3rd field effect transistor (MP3) drain terminal links to each other with the 4th field effect transistor (MP4) source end, and be connected to second operational amplifier (AMP2) inverting input, the 4th field effect transistor (MP4) grid links to each other with second operational amplifier (AMP2) output terminal, and the 4th field effect transistor (MP4) drain electrode is output terminal.
3. voltage-current converter circuit according to claim 2, it is characterized in that: described first operational amplifier (AMP1) is made of the 5th to the 9th field effect transistor (M5-M9), the 8th field effect transistor (M8) drain electrode, the grid of the 5th field effect transistor (M5) grid and the 6th field effect transistor (M6), drain electrode links to each other, the source electrode of the 5th field effect transistor (M5) source electrode and the 6th field effect transistor (M6) connects power supply, the 7th field effect transistor (M7) grid is connected with input signal as the inverting input of first operational amplifier, the 5th field effect transistor (M5) the drain electrode output terminal that drain electrode is connected as first operational amplifier with the 7th field effect transistor (M7) links to each other with the grid of first field effect transistor (M1), the 8th field effect transistor (M8) grid links to each other with the drain electrode of first field effect transistor (M1) as the in-phase input end of first operational amplifier, and the 7th field effect transistor (M7) source electrode links to each other with the 9th field effect transistor (M9) drain electrode with the 8th field effect transistor (M8) source electrode.
4. voltage-current converter circuit according to claim 3, it is characterized in that: described second operational amplifier (AMP2) is made of the tenth to the 16 field effect transistor (M10-M16), the 13 field effect transistor (M13) drain electrode, the tenth field effect transistor (M10) grid links to each other with drain electrode with the grid of the 11 field effect transistor (M11), the source electrode of the tenth field effect transistor (M10) source electrode and the 11 field effect transistor (M11) connects power supply, the 12 field effect transistor (M12) source electrode links to each other with the 14 field effect transistor (M14) drain electrode with the 13 field effect transistor (M13) source electrode, the 14 field effect transistor (M14) source ground, grid connects input current, and the output terminal that the drain electrode of the tenth field effect transistor (M10) and the 12 field effect transistor (M12) links to each other as second operational amplifier links to each other with the 16 field effect transistor (M16) grid; The drain electrode of the 16 field effect transistor (M16) connects power supply, the source electrode of the 16 field effect transistor (M16) the level transfer level that drain electrode links to each other and constitutes second operational amplifier (AMP2) output terminal with the 15 field effect transistor (M15), and link to each other with the 4th field effect transistor (M4) grid, the 15 field effect transistor (M15) grid connects input current, the 15 field effect transistor (M15) source ground.
5. voltage-current converter circuit according to claim 4, it is characterized in that: described the 4th field effect transistor (M4) drain electrode connects output terminal, the drain electrode of the 4th field effect transistor (M4) source electrode and the 3rd field effect transistor (M3) links to each other and is connected with the 12 field effect transistor (M12) grid, the grid of first field effect transistor (M1) source electrode, second field effect transistor (M2) links to each other with drain electrode, the 3rd field effect transistor (M3) grid and is connected with the 13 field effect transistor (M13) grid, and the source electrode of the source electrode of second field effect transistor (M2) and the 3rd field effect transistor (M3) connects power supply.
6. voltage-current converter circuit according to claim 5, it is characterized in that: the bias voltage of described second operational amplifier is provided by the 17 field effect transistor (M17), the grid and the drain electrode of the 17 field effect transistor (M17) connect input current, source ground.
7. voltage-current converter circuit according to claim 6 is characterized in that: the in-phase input end of described first operational amplifier and output terminal are connected with first electric capacity (C1).
8. voltage-current converter circuit according to claim 7 is characterized in that: described the 9th field effect transistor (M9) source ground, grid connects input current, for first operational amplifier provides bias current.
CNU2008200958364U 2008-07-25 2008-07-25 Voltage-current conversion circuit CN201233548Y (en)

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CN103296969B (en) * 2013-05-16 2015-11-25 中国科学技术大学 A kind of ring oscillator of Linear Tuning
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CN103414438A (en) * 2013-07-18 2013-11-27 电子科技大学 Error amplifier circuit
CN103414438B (en) * 2013-07-18 2017-03-29 电子科技大学 A kind of error amplifier circuit
CN103926971A (en) * 2014-04-22 2014-07-16 西安电子科技大学 Current reference circuit for light sensor
CN105759889A (en) * 2015-01-05 2016-07-13 阿尔卑斯电气株式会社 Constant-current circuit and sensor device having this
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CN107688367B (en) * 2016-08-04 2020-08-07 上海贝岭股份有限公司 Differential reference voltage buffer
CN107291133A (en) * 2017-06-15 2017-10-24 深圳市德赛微电子技术有限公司 Negative voltage comparator circuit
CN107291133B (en) * 2017-06-15 2019-04-02 深圳市德赛微电子技术有限公司 Negative voltage comparator circuit
CN107463201A (en) * 2017-08-02 2017-12-12 中国电子科技集团公司第二十四研究所 A kind of Voltage-current conversion circuit and device
CN107463201B (en) * 2017-08-02 2018-10-19 中国电子科技集团公司第二十四研究所 A kind of Voltage-current conversion circuit and device
CN107727243B (en) * 2017-11-22 2019-12-10 北方广微科技有限公司 Uncooled infrared focal plane array readout circuit
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WO2020000238A1 (en) * 2018-06-27 2020-01-02 Dialog Semiconductor (Uk) Limited Circuit for reducing noise signal
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