CN103926755A - 一种显示器及其制作方法 - Google Patents
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Abstract
本发明公开了一种显示器及其制作方法,所述显示器包括:相对设置的TFT基板以及彩膜基板,所述TFT基板包括:第一TFT元件以及第二TFT元件,所述第一TFT元件与第二TFT元件之间透光区域为像素区;设置在所述TFT基板朝向所述彩膜基板一侧表面的像素单元,所述像素单元位于所述像素区的表面上,所述像素单元包括:设置在所述TFT基板朝向所述彩膜基板一侧表面的透明参考电位层;设置在所述参考电位层上的不透明形变层,所述形变层与所述参考电位层绝缘。所述显示器的结构简单,制作成本较低。
Description
技术领域
本发明涉及显示装置技术领域,更具体地说,涉及一种显示器及其制作方法。
背景技术
液晶显示装置(LCD)以其低功耗、易于制作大屏显示等特点成为当今主流显示装置。
一般的,现有的液晶显示装置包括:相对设置的TFT基板以及彩膜基板;设置在所述TFT基板与彩膜基板之间的液晶层。为了实现液晶层的液晶分子对出射光线的控制,需要在所述彩膜基板的内表面设置供电同电极,在其外表设置上偏光片,并需要在TFT基板内表面设置定向膜,在其外表面设置下偏光片。可见,液晶显装置结构复杂,导致制作成本较高。
发明内容
为解决上述技术问题,本发明提供一种显示器,所述显示器的结构简单,制作成本较低。
为实现上述目的,本发明提供如下技术方案:
一种显示器,该显示器包括:相对设置的TFT基板以及彩膜基板,所述TFT基板包括:第一TFT元件以及第二TFT元件,所述第一TFT元件与第二TFT元件之间透光区域为像素区;设置在所述TFT基板朝向所述彩膜基板一侧表面的像素单元,所述像素单元位于所述像素区的表面上,所述像素单元包括:设置在所述TFT基板朝向所述彩膜基板一侧表面的透明参考电位层;设置在所述参考电位层上的不透明形变层,所述形变层与所述参考电位层绝缘;其中,所述第一TFT元件的输出电极与所述参考电位层电连接;所述第二TFT元件的输出电极与所述形变层电连接;所述形变层根据其与所述参考电位层的电压差,以其与所述TFT基板的固定连接部分为固定轴发生与所述电压差对应程度的弹性形变,以改变所述形变层对所述像素区的覆盖面积。
本发明还提供了一种显示器的制作方法,该制作方法包括:提供一TFT基板,所述TFT基板包括:第一TFT元件以及第二TFT元件;在所述TFT基板上表面的绝缘层形成与所述第一TFT元件的输出电极贯通的第一凹槽以及与所述第二TFT元件的输出电极贯通的第二凹槽;在所述TFT基板上表面形成参考电位层,所述参考电位层通过所述第一凹槽与所述第一TFT元件的输出电极电连接;在所述参考电位层上形成形变层,所述形变层通过所述第二凹槽与所述第二TFT元件的输出电极电连接,所述形变层与所述参考电位层绝缘;提供一彩膜基板,将所述彩膜基板与所述TFT基板贴合,所述形变层以及参考电位层位于所述彩膜基板与所述TFT基板之间;其中,所述形变层能够以其与所述TFT基板的固定连接部分为固定轴发生不同程度的弹性形变,以改变其对所述第一TFT元件与第二TFT元件之间像素区的覆盖面积。
从上述技术方案可以看出,本发明所提供了一种平面显示器以及其制作方法,所述平面显示器像素单元包括:固定设置在所述TFT基板朝向所述彩膜基板一侧表面的透明参考电位层;设置在所述参考电位层与所述彩膜基板之间的不透明形变层,所述形变层与所述参考电位层绝缘。其中,所述形变层能够以其与所述TFT基板的固定连接部分为固定轴发生与所述电压差对应程度的弹性形变。因此,可通过所述第一TFT元件控制所述参考电位层的电压,通过所述第二TFT元件控制所述形变层的电压,能够控制所述形变层与所述参考电位层的电压差,进而控制所述形变层对所述像素区的覆盖面积,从而可以控制所述像素区的透光率。
可见,所述平面显示器无需采用液晶材料,通过所述参考电压层以及所述形变层即可实现对像素区出光率的控制,故相对于传统的液晶显示器,结构简单,无需设置在彩膜基板上的共同电极及上偏光片,无需设置在TFT基板上的定向膜以及下偏光片,制作工艺简单,且成本低。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1a为本发明实施例提供的一种显示器的结构示意图;
图1b图1a所示显示器的一个像素单元的结构示意图;
图2为本发明实施例提供的一种显示器的控制原理示意图;
图3-图6为本发明实施例提供的一种显示器的制作方法流程示意图。
具体实施方式
正如背景技术部分所述,现有液晶显示装置通过驱动液晶层的液晶分子的偏转对出射光线进行控制,需要在所述彩膜基板的内表面设置供电同电极,在其外表设置上偏光片,并需要在TFT基板内表面设置定向膜,在其外表面设置下偏光片。因此,液晶显装置结构复杂,导致制作成本较高。
发明人发现,通过在TFT基板的像素区设置不透明形变层以及参考电位差,通过TFT基板的TFT元件控制所述形变层与所述参考电位差的电压,控制所述形变层发生不同程度的形变,即可通过所述形变层控制像素区的出光率,这样无需液晶材料即可实现图像显示控制。
基于上述研究,本发明提供了一种显示器,该显示器包括:
相对设置的TFT基板以及彩膜基板,所述TFT基板包括:第一TFT元件以及第二TFT元件,所述第一TFT元件与第二TFT元件之间透光区域为像素区;
设置在所述TFT基板朝向所述彩膜基板一侧表面的像素单元,所述像素单元位于所述像素区的表面上,所述像素单元包括:设置在所述TFT基板朝向所述彩膜基板一侧表面的透明参考电位层;设置在所述参考电位层上的不透明形变层,所述形变层与所述参考电位层绝缘;
其中,所述第一TFT元件的输出电极与所述参考电位层电连接;所述第二TFT元件的输出电极与所述形变层电连接;所述形变层根据其与所述参考电位层的电压差,以其与所述TFT基板的固定连接部分为固定轴发生与所述电压差对应程度的弹性形变,以改变所述形变层对所述像素区的覆盖面积。
本发明所述显示器可通过所述第一TFT元件控制所述参考电位层的电压,通过所述第二TFT元件控制所述形变层的电压,能够控制所述形变层与所述参考电位层的电压差,进而控制所述形变层对所述像素区的覆盖面积,从而可以控制所述像素区的透光率。
可见,所述平面显示器无需采用液晶材料,通过所述参考电压层以及所述形变层即可实现对像素区出光率的控制,故相对于传统的液晶显示器,结构简单,无需设置在彩膜基板上的共同电极及上偏光片,无需设置在TFT基板上的定向膜以及下偏光片,制作工艺简单,且成本低。
以上是本申请的核心思想,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其他不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广,因此本发明不受下面公开的具体实施例的限制。
其次,本发明结合示意图进行详细描述,在详述本发明实施例时,为便于说明,表示装置件结构的示意图会不依一般比例作局部放大,而且所述示意图只是示例,其在此不应限制本发明保护的范围。此外,在实际制作中应包含长度、宽度及高度的三维空间尺寸。
基于上述思想,本申请实施例提供了一种显示器,参考图1a,包括:相对设置的TFT基板21以及彩膜基板22;设置在所述TFT基板21朝向所述彩膜基板22一侧表面的像素单元。
所述彩膜基板22包括:第一基板221以及设置在所述第一基板朝向所述TFT基板21一侧表面的黑色矩阵222以及彩色滤光膜223。所述黑色矩阵222对应的区域为不透光的非显示区。优选的,所述显示器还包括设置在所述彩膜基板背离所述TFT基板一侧表面、用于防止静电的透明导电层(图2中未示出),所述透明导电层可以为ITO层。
所述TFT基板包括:第二基板211以及设置在所述第一基板221朝向所述彩膜基板22一侧表面的第一TFT元件23以及第二TFT元件24。所述第一TFT元件包括:控制电极231、输入电极232以及输出电极233。所述第二TFT元件24包括:控制电极241、输入电极242以及输出电极243。
其中,所述第一TFT元件23与第二TFT元件24之间透光区域为像素区。所述控制电极为TFT元件的栅极,所述输入电极为TFT元件的源极,所述输出电极为TFT元件的漏极。
参考图1a以及图1b,所述像素单元包括:透明的参考电位层25以及不透明的形变层26。所述像素单元设置在所述像素区的表面。其中,所述参考电位层25设置在所述TFT基板21朝向所述彩膜基板22一侧的表面;所述形变层26设置在所述参考电位层23上,且与所述参考电位层25绝缘。所述参考电位层25表面覆盖有透明绝缘层27。
所述第一TFT元件23的输出电极233与所述参考电位层25电连接,通过所述输出电极233控制所述参考电位层25的电压;所述第二TFT元件24的输出电极243与所述形变层26电连接,通过所述输出电极243控制所述形变层26的电压。
所述形变层25为可发生弹性形变的导电层,当所述形变层26与所述参考电位层25之间电压不同时,二者之间的电场强度不同,导致所述形变层26受到的电场力不同,因此,所述形变层26可以根据其与所述参考电位层25的电压差,以其与所述TFT基板21的固定连接部分为固定轴发生与所述电压差对应程度的弹性形变,以改变所述形变层对所述像素区的覆盖面积。
为了避免所述形变层26发生脱落,使得其与TFT基板21连接更加稳固,在所述固定连接部分表面还设置有保护层28。所述保护层28为粘附性高的材料,如二氧化硅等。
通过支撑部件29固定连接所述TFT基板21与所述彩膜基板22,所述支撑部件29的厚度大于所述形变层26发生最大程度形变时,所述形变层26最高点与所述TFT基板上表面的距离,以使得所述形变层26有足够的高度空间发生弹性形变。所述支撑部件29的形状可以为圆柱结构、或立方体结构、或球体结构、或椎体结构、或棱台结构。
为了降低空气阻力,所述像素单元为压强小于标准大气压的密封空间,以降低气体压强对形变层26运动的阻力,且该密闭空间仅填充抑制氧化气体,所述抑制氧化气体为氮气、或是任意一种惰性气体、或多种惰性气体的混合气体、或氮气与一种或是多种惰性气体的混合气体,以防止形变层26氧化而老化,保证其具有较长的使用寿命。
在本实施例中,所述形变层26的材料可以为钛、或铜、或银、或铝,但不限于上述材料。所述形变层26厚度为1nm-10000nm,包括端点值,具体厚度可以根据设定的形变程度设定。
参考图3,图3示出了一个TFT基板21上三个像素单元的不同透光状态。左边像素单元的参考电位层25与形变层26均为施加电压,故该形变层26保持初始状态,光线部分通过。中间像素单元的参考电位层25与形变层26均为施加极性相反的电压,使得其形变层26完全覆盖在绝缘层27表面,光线不能通过,右边像素单元的参考电位层25与形变层26均为施加极性相同的电压,使得其形变层26发生向上翻转的弹性形变,背光能够通过,通过控制器向上翻转程度控制光线的通过率。
通过上述描述可知,本实施例所述显示器,通过控制所述形变层与所述参考电位层二者之间的电压差以及二者各自的电压极性,能够控制形变层的形变程度,进而控制所述形变层对所述像素区的覆盖面积,进而控制光线的透过率,实现不同的灰度的图像显示。
可见,所述平面显示器无需采用液晶材料,通过所述参考电压层以及所述形变层即可实现对像素区出光率的控制,故相对于传统的液晶显示器,结构简单,无需设置在彩膜基板上的共同电极及上偏光片,无需设置在TFT基板上的定向膜以及下偏光片,制作工艺简单,且成本低。
本申请另一实施例还提供了一种上述显示器的制作方法,包括:
步骤S11:参考图3,提供一TFT基板21。
所述TFT基板21包括:第二基板211以及设置在所述第一基板221上表面的第一TFT元件23以及第二TFT元件24。所述第一TFT元件包括:控制电极231、输入电极232以及输出电极233。所述第二TFT元件24包括:控制电极241、输入电极242以及输出电极243。所述TFT基板21还包括覆盖所述第一TFT元件23与第二TFT元件24的钝化层212。
步骤S12:参考图4,在所述TFT基板21上形成第一凹槽A与第二凹槽B。
可通过光刻或是激光刻蚀等工艺形成所述第一凹槽A与第二凹槽B。所述第一凹槽A与所述第一TFT元件23的输出电极233贯通,所述第二凹槽B与所述第二TFT元件24的输出电极243贯通。
步骤S13:参考图5,在所述TFT基板21上表面形成参考电位层25,所述参考电位层25通过所述第一凹槽A与所述第一TFT元件23的输出电极233电连接。
可首先在所述TFT基板21上表面形成整层的透明导电层,在此过程中,透明导电层的材料沉积在第一凹槽A,实现与输出电极233电连接。然后通过光刻工艺对所述透明导电层进行刻蚀,形成设定形状的参考电位层25。
步骤S14:参考图6,在所述参考电位层25上形成形变层26,所述形变层26通过所述第二凹槽B与所述第二TFT元件24的输出电极243电连接,所述形变层26与所述参考电位层25绝缘。
在该过程中,为了保证形变层26与参考电位层25绝缘,首先在所述参考电位层25表面形成设定形状的绝缘层27。在所述绝缘层27上覆盖光刻胶层,在光刻胶固化后,在所述光刻胶层上形成所述形变层26。通过镀膜以及刻蚀工艺形成设定形状的形变层26,在镀膜时,形变层26的材料会填充第二凹槽B,进而实现形变层26与所述第二TFT元件24的输出电极243的电连接。最后,去除光刻胶,使得形变层26仅通过与第二凹槽B连接的部分被固定,使得其他部分可以发生弹性形变。
为了使得形变层26在TFT基板上连接更加稳固,在其与TFT基板固定连接的部分形成保护层28。所述保护层28可以为二氧化硅层,可通过沉积镀膜与刻蚀工艺形成。
步骤S15:提供一彩膜基板22,将所述彩膜基板22与所述TFT基板21贴合,所述形变层26以及参考电位层25位于所述彩膜基板22与所述TFT基板21之间,最终形成的显示器结构如图1所示。
所述形变层26能够以其与所述TFT基板21的固定连接部分为固定轴发生不同程度的弹性形变,以改变其对所述第一TFT元件与第二TFT元件之间像素区的覆盖面积。
为了防止边缘漏光问题,所述形变层26与所述TFT基板固定连接的部分被所述彩膜基板22的黑色矩阵222在TFT基板上的投影覆盖,即形变层26在TFT基板投影的面积大于黑色矩阵222的开口。
在将所述彩膜基板22与所述TFT基板21贴合之前,为了避免静电对显示器的干扰,可以在所述彩膜基板背离所述TFT基板一侧表面形成透明导电层。
所述彩膜基板22与所述TFT基板21低压密封设置,以减小形变层26阻力,且二者之间填充抑制氧化气体,以防止形变层26被氧化,保证其使用寿命。
通过上述描述可知,本实施例所述制作方法制备的显示器无需液晶盒,在制作过程中,无需液晶层的平坦化处理,无需设置在彩膜基板上的共同电极及上偏光片,无需设置在TFT基板上的定向膜以及下偏光片,制作工艺简单,且成本低。
需要说明的是,本申请装置实施例与方法实施例描述各有侧重,相同相似的描述可相互补充说明。在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。申请文件中提及的动词“包括”、“包含”及其词形变化的使用不排除除了申请文件中记载的那些元素或步骤之外的元素或步骤的存在。元素前的冠词“一”或“一个”不排除多个这种元素的存在。另外,上述TFT元件结构可为a-Si非晶硅结构、LTPS低温多晶硅结构,或氧化物半导体(如IGZO)结构。
虽然已经参考若干具体实施方式描述了本发明的精神和原理,但是应该理解,本发明并不限于所公开的具体实施方式,对各方面的划分也不意味着这些方面中的特征不能组合以进行受益,这种划分仅是为了表述的方便。本发明旨在涵盖所附权利要求的精神和范围内所包括的各种修改和等同布置。所附权利要求的范围符合最宽泛的解释,从而包含所有这样的修改及等同结构和功能。
Claims (12)
1.一种显示器,其特征在于,包括:
相对设置的TFT基板以及彩膜基板,所述TFT基板包括:第一TFT元件以及第二TFT元件,所述第一TFT元件与第二TFT元件之间透光区域为像素区;
设置在所述TFT基板朝向所述彩膜基板一侧表面的像素单元,所述像素单元位于所述像素区的表面上,所述像素单元包括:设置在所述TFT基板朝向所述彩膜基板一侧表面的透明参考电位层;设置在所述参考电位层上的不透明形变层,所述形变层与所述参考电位层绝缘;
其中,所述第一TFT元件的输出电极与所述参考电位层电连接;所述第二TFT元件的输出电极与所述形变层电连接;所述形变层根据其与所述参考电位层的电压差,以其与所述TFT基板的固定连接部分为固定轴发生与所述电压差对应程度的弹性形变,以改变所述形变层对所述像素区的覆盖面积。
2.根据权利要求1所述的显示器,其特征在于,还包括:
覆盖所述连接部分的保护层,所述保护层用于固定所述连接部分。
3.根据权利要求1所述的显示器,其特征在于,所述TFT基板与所述彩膜基板之间设置有支撑部件,所述形变层发生最大形变时,所述支撑部件的厚度大于所述形变层最高点与所述TFT基板上表面的距离。
4.根据权利要求3所述的平面显示器,其特征在于,所述支撑部件形状为圆柱结构、立方体结构、球体结构、椎体结构或棱台结构。
5.根据权利要求1所述的平面显示器,其特征在于,还包括:
设置在所述彩膜基板背离所述TFT基板一侧表面、用于防止静电的透明导电层。
6.根据权利要求1所述的平面显示器,其特征在于,所述像素单元所处空间为压强不大于标准大气压,且仅填充抑制氧化气体的密闭空间。
7.根据权利要求6所述的平面显示器,其特征在于,所述抑制氧化气体为氮气、或是任意一种惰性气体、或多种惰性气体的混合气体、或氮气与一种或是多种惰性气体的混合气体。
8.根据权利要求1-7任一项所述的平面显示器,其特征在于,所述形变层的材料为钛、铜、银或铝。
9.根据权利要求1-7任一项所述的平面显示器,其特征在于,所述形变层的厚度为1nm-10000nm,包括端点值。
10.一种显示器的制作方法,其特征在于,包括
提供一TFT基板,所述TFT基板包括:第一TFT元件以及第二TFT元件;
在所述TFT基板上表面的绝缘层形成与所述第一TFT元件的输出电极贯通的第一凹槽以及与所述第二TFT元件的输出电极贯通的第二凹槽;
在所述TFT基板上表面形成参考电位层,所述参考电位层通过所述第一凹槽与所述第一TFT元件的输出电极电连接;
在所述参考电位层上形成形变层,所述形变层通过所述第二凹槽与所述第二TFT元件的输出电极电连接,所述形变层与所述参考电位层绝缘;
提供一彩膜基板,将所述彩膜基板与所述TFT基板贴合,所述形变层以及参考电位层位于所述彩膜基板与所述TFT基板之间;
其中,所述形变层能够以其与所述TFT基板的固定连接部分为固定轴发生不同程度的弹性形变,以改变其对所述第一TFT元件与第二TFT元件之间像素区的覆盖面积。
11.根据权利要求10所述的制作方法,其特征在于,在将所述彩膜基板与所述TFT基板贴合之前,还包括,在所述彩膜基板背离所述TFT基板一侧表面形成透明导电层。
12.根据权利要求10所述的制作方法,其特征在于,所述TFT基板与所述彩膜基板密封设置,且二者之间填充抑制氧化气体。
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CN105161022A (zh) * | 2015-10-22 | 2015-12-16 | 厦门天马微电子有限公司 | 显示器及其制作方法 |
CN105259676A (zh) * | 2015-11-18 | 2016-01-20 | 厦门天马微电子有限公司 | 一种阵列基板、显示面板以及阵列基板的制作方法 |
CN107689383A (zh) * | 2016-08-05 | 2018-02-13 | 群创光电股份有限公司 | 显示装置及其制造方法 |
CN111554195A (zh) * | 2020-05-30 | 2020-08-18 | 京东方科技集团股份有限公司 | 柔性显示模组及其制备方法、电子设备 |
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CN104977764A (zh) * | 2015-06-18 | 2015-10-14 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法、液晶显示器 |
CN107146792B (zh) * | 2017-05-11 | 2019-07-30 | 京东方科技集团股份有限公司 | 一种静电防护装置及其制作方法 |
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CN105161022A (zh) * | 2015-10-22 | 2015-12-16 | 厦门天马微电子有限公司 | 显示器及其制作方法 |
CN105161022B (zh) * | 2015-10-22 | 2018-02-06 | 厦门天马微电子有限公司 | 显示器及其制作方法 |
CN105259676A (zh) * | 2015-11-18 | 2016-01-20 | 厦门天马微电子有限公司 | 一种阵列基板、显示面板以及阵列基板的制作方法 |
CN105259676B (zh) * | 2015-11-18 | 2018-10-23 | 厦门天马微电子有限公司 | 一种阵列基板、显示面板以及阵列基板的制作方法 |
CN107689383A (zh) * | 2016-08-05 | 2018-02-13 | 群创光电股份有限公司 | 显示装置及其制造方法 |
CN111554195A (zh) * | 2020-05-30 | 2020-08-18 | 京东方科技集团股份有限公司 | 柔性显示模组及其制备方法、电子设备 |
CN111554195B (zh) * | 2020-05-30 | 2022-06-14 | 京东方科技集团股份有限公司 | 柔性显示模组及其制备方法、电子设备 |
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CN103926755B (zh) | 2017-08-25 |
DE102014109529A1 (de) | 2015-07-02 |
US20150187799A1 (en) | 2015-07-02 |
US9184184B2 (en) | 2015-11-10 |
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