CN103924201A - Magnetron sputtering equipment - Google Patents
Magnetron sputtering equipment Download PDFInfo
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- CN103924201A CN103924201A CN201410126503.3A CN201410126503A CN103924201A CN 103924201 A CN103924201 A CN 103924201A CN 201410126503 A CN201410126503 A CN 201410126503A CN 103924201 A CN103924201 A CN 103924201A
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- magnetron sputtering
- sputtering equipment
- heating
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- film forming
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Abstract
The invention discloses magnetron sputtering equipment. The magnetron sputtering equipment comprises a film-forming chamber and a plurality of targets which are arranged into a queue; a first heating device opposite to the queue and used for heating a base plate is arranged inside the film-forming chamber; and a second heating device corresponding to gaps among the targets is arranged inside the film-forming chamber. According to the magnetron sputtering equipment disclosed by the invention, the second heating device or the third heating device is utilized, so that formed temperatures on the base plate are not uniform, and temperature difference among different areas on the base plate causes that attaching speed of atoms in different areas on the base plate is different, and therefore, film-forming velocity can be regulated to improve film-forming unevenness. And the magnetron sputtering equipment disclosed by the invention is simple in structure and can effectively prevent the film-forming unevenness on the surface of the substrate.
Description
Technical field
The present invention relates to a kind of device that utilizes sputtering method metallic substance to be carried out to plating, particularly relate to a kind of magnetron sputtering equipment.
Background technology
Thin Film Transistor (TFT) directly affects the performance of Thin Film Transistor (TFT) liquid-crystal display as Primary Component.At existing TFT-LCD(Thin Film Transistor (TFT) LCD) in manufacture field, the preparation of Thin Film Transistor (TFT) adopts the means of magnetron sputtering plating to complete conventionally.
Lotus energy particle (as argon ion) bombardment solid surface, causes that the various particles (as atom, molecule or molecular grouping bundle) of solid surface claim " sputter " from the phenomenon of this solid surface effusion.In magnetron sputtering membrane process, normally apply the positive ion bombardment solid (target) that argon gas ionization produces, it is upper that the neutral atom spilling deposits to substrate (substrate), to form rete.
In large size TFT-LCD, OLED and PV produce, large-scale vertical magnetron sputtering equipment is widely used.In this large-scale vertical magnetron sputtering equipment, target has multiple, and multiple targets are arranged and formed queue, and substrate (panel) be arranged in parallel with above-mentioned queue, because there is space between multiple target, causes thus substrate surface film forming inhomogeneous.Current solution is mainly in film forming, to keep substrate or the target can Free Slosh, but so both can roll up equipment energy consumption and complexity, needs again to widen target thickness, causes the rising of production cost.
Summary of the invention
The object of the present invention is to provide a kind of simple in structure, effectively prevent the magnetron sputtering equipment that substrate surface film forming is inhomogeneous.
Magnetron sputtering equipment of the present invention, comprise film forming chamber and be arranged at the target of the inside of described film forming chamber, described target is multiple, multiple targets are arranged and are formed queue, the inside of described film forming chamber is provided with the first heater that be used to base plate heating relative with described queue, and the inside of described film forming chamber is provided with the corresponding secondary heating mechanism in gap between target.
Magnetron sputtering equipment of the present invention, wherein, the inside of described film forming chamber is provided with the substrate installation region for installation base plate, described substrate installation region is between described first heater and described queue, and described secondary heating mechanism is between described substrate installation region and first heater.
Magnetron sputtering equipment of the present invention, wherein, described secondary heating mechanism is multiple heating rods that be arranged in parallel, the gap of multiple described heating rods respectively and between described target is corresponding.
Magnetron sputtering equipment of the present invention, wherein, multiple described heating rods are connected with thermoregulation mechanism respectively.
Magnetron sputtering equipment of the present invention, wherein, between described substrate installation region and first heater, be provided with the support framework for support substrate, described secondary heating mechanism is multiple heating support bars that be arranged in parallel, multiple described heating support bars be arranged on support framework and gap respectively and between described target corresponding.
Magnetron sputtering equipment of the present invention, wherein, multiple described heating support bars are connected with thermoregulation mechanism respectively.
Magnetron sputtering equipment of the present invention, comprise film forming chamber and be arranged at the target of the inside of described film forming chamber, described target is multiple, multiple targets are arranged and are formed queue, the inside of described film forming chamber is provided with three heating unit that be used to base plate heating relative with described queue, described the 3rd heating unit comprises multiple heater strips that be arranged in parallel, between multiple described heater strips, has space, and the gap between described multiple heater strips and target is corresponding.
Magnetron sputtering equipment of the present invention, utilize secondary heating mechanism or the 3rd heating unit to make formation temperature inequality on substrate, what on substrate, the temperature spread of different zones caused that atom is different from region on substrate adheres to speed difference, thereby can adjust rate of film build, to improve film forming inequality.Magnetron sputtering equipment of the present invention, simple in structure, can effectively prevent that substrate surface film forming is inhomogeneous.
Brief description of the drawings
Fig. 1 is the vertical view of the structural representation of magnetron sputtering equipment the first embodiment of the present invention;
Fig. 2 is the vertical view of the structural representation of magnetron sputtering equipment the second embodiment of the present invention;
Fig. 3 is the vertical view of the structural representation of the third embodiment of magnetron sputtering equipment of the present invention;
Fig. 4 is the front view of the structural representation of the 3rd heating unit in Fig. 3.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, can be implemented, but illustrated embodiment is not as a limitation of the invention so that those skilled in the art can better understand the present invention also.
Embodiment mono-
As shown in Figure 1, the embodiment of magnetron sputtering equipment of the present invention, comprise film forming chamber 10 and be arranged at the target 1 of the inside of film forming chamber 10, target 1 is multiple and is set parallel to each other, multiple targets 1 are arranged and are formed queue 11, the inside of film forming chamber 10 is provided with the first heater 101 that be used to substrate 100 heat relative with queue 11, and the inside of film forming chamber 10 is provided with the corresponding secondary heating mechanism 102 in gap between target 1.Secondary heating mechanism 102 is used to substrate 100 to heat equally.
The embodiment of magnetron sputtering equipment of the present invention, wherein, the inside of film forming chamber 10 is provided with the substrate installation region 2 for installation base plate 100, substrate installation region 2 is between first heater 101 and queue 11, and secondary heating mechanism 102 is between substrate installation region 2 and first heater 101.
The embodiment of magnetron sputtering equipment of the present invention, wherein, secondary heating mechanism 102 is multiple heating rods that be arranged in parallel 3, the gap of multiple heating rods 3 respectively and between target 1 is corresponding.Heating rod 3 is parallel with target 1.
The embodiment of magnetron sputtering equipment of the present invention, wherein, multiple heating rods 3 are connected with thermoregulation mechanism respectively.Heating rod 3 is electrically heated rod.Thermoregulation mechanism is for regulating the temperature of heating rod 3.
Embodiment bis-
As shown in Figure 2, the difference of the embodiment of magnetron sputtering equipment of the present invention and embodiment mono-is, between substrate installation region 2 and first heater 101, be provided with the support framework 4 for support substrate 100, secondary heating mechanism 102 is multiple heating support bars 5 that be arranged in parallel, and it is corresponding that multiple heating support bars 5 are arranged at gap on support framework 4 and respectively and between target 1.Heating support bar 5 when being used to substrate 100 to heat also for supporting substrates 100.
The embodiment of magnetron sputtering equipment of the present invention, wherein, multiple heating support bars 5 are connected with thermoregulation mechanism respectively.Heating support bar 5 is electric heater unit.Thermoregulation mechanism is for regulating the temperature of heating support bar 5.
Embodiment tri-
As shown in Figure 3, Figure 4, the embodiment of magnetron sputtering equipment of the present invention, comprise film forming chamber 10 ' and be arranged at the target 1 ' of the inside of film forming chamber 10 ', target 1 ' is multiple, multiple targets 1 ' are arranged and are formed queue 11 ', and the inside of film forming chamber 10 ' is provided with three heating unit 30 that be used to substrate 100 heat relative with queue 11 '.
The 3rd heating unit 30 is hot-plate.The 3rd heating unit 30 comprises multiple heater strips that be arranged in parallel 31, between multiple heater strips 31, has space, and the gap between multiple heater strips 31 and target 1 ' is corresponding.
Preferably, heater strip 31 is parallel with target 1 '.
In magnetron sputtering equipment of the present invention, gap between secondary heating mechanism or the 3rd heating unit and target is corresponding, so at work, the rate of film build in corresponding region on adjustment substrate that can be more convenient by secondary heating mechanism or the 3rd heating unit, to improve film forming inequality.Utilize secondary heating mechanism or the 3rd heating unit to make formation temperature inequality on substrate, what on substrate, the temperature spread of different zones can cause that atom is different from region on substrate adheres to speed difference, just can adjust like this rate of film build in different zones on substrate (particularly corresponding region, the gap on substrate and between target) by adjusting secondary heating mechanism or the 3rd heating unit, to improve film forming inequality.
For example, in practical work, utilize secondary heating mechanism or the 3rd heating unit make on substrate and target between the temperature in corresponding region, gap raise, like this these regions of atom on substrate adhere to speed, made up thus these regions due to and target between the gap corresponding one-tenth film density deficiency causing, ensured substrate surface All Ranges film forming uniformity.
Magnetron sputtering equipment of the present invention, simple in structure, can effectively prevent that substrate surface film forming is inhomogeneous.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. a magnetron sputtering equipment, comprise film forming chamber and be arranged at the target of the inside of described film forming chamber, described target is multiple, multiple targets are arranged and are formed queue, the inside of described film forming chamber is provided with the first heater that be used to base plate heating relative with described queue, it is characterized in that, the inside of described film forming chamber is provided with the corresponding secondary heating mechanism in gap between target.
2. magnetron sputtering equipment according to claim 1, it is characterized in that, the inside of described film forming chamber is provided with the substrate installation region for installation base plate, described substrate installation region is between described first heater and described queue, and described secondary heating mechanism is between described substrate installation region and first heater.
3. magnetron sputtering equipment according to claim 1, is characterized in that, described secondary heating mechanism is multiple heating rods that be arranged in parallel, and the gap of multiple described heating rods respectively and between described target is corresponding.
4. magnetron sputtering equipment according to claim 3, is characterized in that, multiple described heating rods are connected with thermoregulation mechanism respectively.
5. magnetron sputtering equipment according to claim 2, it is characterized in that, between described substrate installation region and first heater, be provided with the support framework for support substrate, described secondary heating mechanism is multiple heating support bars that be arranged in parallel, multiple described heating support bars be arranged on support framework and gap respectively and between described target corresponding.
6. magnetron sputtering equipment according to claim 5, is characterized in that, multiple described heating support bars are connected with thermoregulation mechanism respectively.
7. a magnetron sputtering equipment, comprise film forming chamber and be arranged at the target of the inside of described film forming chamber, described target is multiple, multiple targets are arranged and are formed queue, it is characterized in that, the inside of described film forming chamber is provided with three heating unit that be used to base plate heating relative with described queue, and described the 3rd heating unit comprises multiple heater strips that be arranged in parallel, between multiple described heater strips, have space, the gap between described multiple heater strips and target is corresponding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126503.3A CN103924201B (en) | 2014-03-31 | 2014-03-31 | Magnetron sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126503.3A CN103924201B (en) | 2014-03-31 | 2014-03-31 | Magnetron sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103924201A true CN103924201A (en) | 2014-07-16 |
| CN103924201B CN103924201B (en) | 2016-03-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410126503.3A Expired - Fee Related CN103924201B (en) | 2014-03-31 | 2014-03-31 | Magnetron sputtering equipment |
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| CN (1) | CN103924201B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008214687A (en) * | 2007-03-02 | 2008-09-18 | Toppan Printing Co Ltd | Film deposition method, sputtering system, sputtering target, and manufacturing method of organic electroluminescent apparatus |
| CN102187007A (en) * | 2008-10-16 | 2011-09-14 | 株式会社爱发科 | Sputtering apparatus, thin film forming method and method for manufacturing field effect transistor |
| CN103124805A (en) * | 2011-06-08 | 2013-05-29 | 株式会社半导体能源研究所 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
-
2014
- 2014-03-31 CN CN201410126503.3A patent/CN103924201B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008214687A (en) * | 2007-03-02 | 2008-09-18 | Toppan Printing Co Ltd | Film deposition method, sputtering system, sputtering target, and manufacturing method of organic electroluminescent apparatus |
| CN102187007A (en) * | 2008-10-16 | 2011-09-14 | 株式会社爱发科 | Sputtering apparatus, thin film forming method and method for manufacturing field effect transistor |
| CN103124805A (en) * | 2011-06-08 | 2013-05-29 | 株式会社半导体能源研究所 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
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| CN103924201B (en) | 2016-03-30 |
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Granted publication date: 20160330 Termination date: 20200331 |