CN103890948B - 具有前焦距校正的光学器件的晶片级制造 - Google Patents

具有前焦距校正的光学器件的晶片级制造 Download PDF

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Publication number
CN103890948B
CN103890948B CN201280052514.0A CN201280052514A CN103890948B CN 103890948 B CN103890948 B CN 103890948B CN 201280052514 A CN201280052514 A CN 201280052514A CN 103890948 B CN103890948 B CN 103890948B
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China
Prior art keywords
wafer
processing step
optical
region
spacer
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Chinese (zh)
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CN103890948A (zh
Inventor
H.鲁德曼恩
M.马鲁克
A.比伊特施
P.罗恩特根
S.海姆加特纳
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Ames Osram Asia Pacific Pte Ltd
Sensors Singapore Private Ltd
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Heptagon Micro Optics Pte Ltd
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0085—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing wafer level optics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49718—Repairing
    • Y10T29/49748—Repairing by shaping, e.g., bending, extruding, turning, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Lens Barrels (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Camera Bodies And Camera Details Or Accessories (AREA)
  • Studio Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
CN201280052514.0A 2011-08-25 2012-08-24 具有前焦距校正的光学器件的晶片级制造 Active CN103890948B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161527355P 2011-08-25 2011-08-25
US61/527355 2011-08-25
PCT/CH2012/000201 WO2013026175A1 (en) 2011-08-25 2012-08-24 Wafer-level fabrication of optical devices with front focal length correction

Publications (2)

Publication Number Publication Date
CN103890948A CN103890948A (zh) 2014-06-25
CN103890948B true CN103890948B (zh) 2017-12-01

Family

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Family Applications (2)

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CN201280052514.0A Active CN103890948B (zh) 2011-08-25 2012-08-24 具有前焦距校正的光学器件的晶片级制造
CN201280052516.XA Active CN103890949B (zh) 2011-08-25 2012-08-24 光学器件、特别是用于计算式摄像机的模块的晶片级制造

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201280052516.XA Active CN103890949B (zh) 2011-08-25 2012-08-24 光学器件、特别是用于计算式摄像机的模块的晶片级制造

Country Status (8)

Country Link
US (2) US20140307081A1 (OSRAM)
EP (2) EP2748854B1 (OSRAM)
JP (2) JP6223975B2 (OSRAM)
KR (2) KR102056501B1 (OSRAM)
CN (2) CN103890948B (OSRAM)
SG (4) SG2014008726A (OSRAM)
TW (3) TWI567956B (OSRAM)
WO (2) WO2013026174A2 (OSRAM)

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WO2015126328A1 (en) * 2014-02-18 2015-08-27 Heptagon Micro Optics Pte. Ltd. Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and fabrication of the optical modules
WO2015191001A1 (en) 2014-06-10 2015-12-17 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules including hybrid arrangements of beam shaping elements, and imaging devices incorporating the same
US9711552B2 (en) * 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
US9507143B2 (en) 2014-09-19 2016-11-29 Intel Corporation Compact illumination system
EP3207416B1 (en) 2014-10-14 2020-02-26 Heptagon Micro Optics Pte. Ltd. Optical element stack assemblies
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
KR102329129B1 (ko) * 2015-05-12 2021-11-19 삼성전자주식회사 샘플값 보상을 위한 영상 부호화 방법과 그 장치, 및 샘플값 보상을 위한 영상 복호화 방법과 그 장치
WO2016191142A2 (en) * 2015-05-27 2016-12-01 Verily Life Sciences Llc Nanophotonic hyperspectral/lightfield superpixel imager
JP6619174B2 (ja) * 2015-07-31 2019-12-11 ソニーセミコンダクタソリューションズ株式会社 製造装置および方法
WO2017023211A1 (en) * 2015-08-06 2017-02-09 Heptagon Micro Optics Pte. Ltd. Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and fabrication of the optical modules
DE102015215833A1 (de) 2015-08-19 2017-02-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Multiaperturabbildungsvorrichtung mit Optiksubstrat
CN108700721B (zh) 2015-11-12 2021-12-31 赫普塔冈微光有限公司 光学元件堆叠组件
KR20170073910A (ko) 2015-12-21 2017-06-29 에스케이하이닉스 주식회사 라이트 필드 이미징 장치 및 그 제조방법
DE102016200285A1 (de) * 2016-01-13 2017-07-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Multiaperturabbildungsvorrichtung, Abbildungssystem und Verfahren zum Erfassen eines Objektbereichs
CN108941932A (zh) * 2017-05-23 2018-12-07 东莞东阳光科研发有限公司 人工晶体制备方法
US10677964B2 (en) * 2017-10-23 2020-06-09 Omnivision Technologies, Inc. Lens wafer assembly and associated method for manufacturing a stepped spacer wafer
WO2020183600A1 (ja) 2019-03-12 2020-09-17 オリンパス株式会社 内視鏡用撮像装置、および、内視鏡
JP7654570B2 (ja) 2020-01-30 2025-04-01 古河電気工業株式会社 光モジュールおよび光学装置
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Also Published As

Publication number Publication date
CN103890949B (zh) 2017-10-03
TW201316497A (zh) 2013-04-16
TW201724487A (zh) 2017-07-01
KR102056501B1 (ko) 2019-12-16
TWI620310B (zh) 2018-04-01
CN103890948A (zh) 2014-06-25
JP6282225B2 (ja) 2018-02-21
KR20140054280A (ko) 2014-05-08
US20140299587A1 (en) 2014-10-09
WO2013026174A3 (en) 2013-04-11
JP6223975B2 (ja) 2017-11-01
CN103890949A (zh) 2014-06-25
EP2748853B1 (en) 2023-10-11
EP2748854A1 (en) 2014-07-02
EP2748853A2 (en) 2014-07-02
TWI567956B (zh) 2017-01-21
WO2013026174A2 (en) 2013-02-28
TWI582969B (zh) 2017-05-11
KR101966480B1 (ko) 2019-04-05
TW201327790A (zh) 2013-07-01
SG2014008718A (en) 2014-04-28
US10444477B2 (en) 2019-10-15
WO2013026175A1 (en) 2013-02-28
US20140307081A1 (en) 2014-10-16
JP2014524597A (ja) 2014-09-22
SG10201606884TA (en) 2016-10-28
EP2748854B1 (en) 2021-06-02
JP2014526067A (ja) 2014-10-02
SG2014008726A (en) 2014-04-28
SG10201606882XA (en) 2016-10-28
KR20140068984A (ko) 2014-06-09

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