CN103887330B - A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact and the preparation method of this bipolar device - Google Patents
A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact and the preparation method of this bipolar device Download PDFInfo
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- CN103887330B CN103887330B CN201410136051.7A CN201410136051A CN103887330B CN 103887330 B CN103887330 B CN 103887330B CN 201410136051 A CN201410136051 A CN 201410136051A CN 103887330 B CN103887330 B CN 103887330B
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- 239000002253 acid Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 229920005591 polysilicon Polymers 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 28
- 230000002787 reinforcement Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 14
- 230000006378 damage Effects 0.000 abstract description 7
- 238000006073 displacement reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 2
- 125000004429 atom Chemical group 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 208000019155 Radiation injury Diseases 0.000 description 2
- 231100000987 absorbed dose Toxicity 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
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- General Physics & Mathematics (AREA)
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Abstract
A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact and the preparation method of this bipolar device, belong to electronic technology field.The present invention be in order to solve existing bipolar device can produce under space radiation environment ionization and displacement effect, bipolar device raying damage after electrical performance indexes decline problem.The metal level that a kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact of the present invention connects bipolar device by polysilicon is attached by the way of launch site, thus reaches to suppress bipolar device to produce ionization and the purpose of shifted radiation damage at space radiation environment；The preparation method of a kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact of the present invention, while remaining traditional bipolar device preparation technology, has prepared the bipolar device that radiation damage can be greatly lowered.The present invention is be applicable to bipolar device radiation hardened technology is applied.
Description
Technical field
The invention belongs to electronic technology field, particularly relate to a kind of Flouride-resistani acid phesphatase bipolar device.
Background technology
Space radiation environment can cause bipolar device to produce ionization and displacement effect.Ionisation effect is mainly bipolar device
SiO2Passivation layer causes damage, and at SiO2/ Si interface generates interfacial state, thus affects the unit for electrical property parameters of bipolar device.Electricity
From radiation effect at SiO2Electron hole pair is produced in Ceng.The electron mobility produced is relatively big, major part removal passivation layer.?
Before its removal, some electronics and hole-recombination.The mobility in hole is relatively slow, in addition to the hole compound with electronics, surplus
Remaining by SiO2The defect capture of layer, forms capture positive charge, and then introduces SiO in interface2/ Si interfacial state.SiO2Layer
In capture positive charge and SiO2/ Si interface interfacial state can cause the recombination rate of emitter junction to increase, and causes superfluous base current IB
Increase so that the degeneration of transistor current gain, cause bipolar device radiation damage.
The increase of ionization radiation injury recombination rate mainly have of both reason:
(1) emitter junction depletion layer is in the extension of base region surface (p type island region)；
(2) recombination-rate surface increases.
Oxide skin(coating) is captured positive charge, surface characteristic can be affected, and for PN junction, its depletion layer district can be caused
Territory extends to side, P district.For NPN type device, emitter base depletion layer is to the less side, p-type base of doping content
Extension；And for positive-negative-positive device, emitter base depletion layer extends to the side, p-type launch site that doping content is bigger.This
Plant extension and all can cause the increase of recombination current, but involved mechanism is complex.Due to generation in irradiation process
Capture positive charge quantity gradually increases, and causes depletion layer constantly to extend to territory, p type island region, causes transistor emission district area continuous
Changing, result causes the electrical performance indexes of bipolar device to decline.
Summary of the invention
The present invention be in order to solve existing bipolar device can produce under space radiation environment ionization and displacement effect, bipolar device
The problem that after part raying damage, electrical performance indexes declines, now provides a kind of Flouride-resistani acid phesphatase based on the emitter electrode way of contact double
Pole device and the preparation method of this bipolar device.
A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact, the metal level of this bipolar device utilizes with launch site
Heterojunction characteristics Material reinforcement electrode structure connects.
Above-mentioned heterojunction characteristics Material reinforcement electrode structure includes: polysilicon and metal silicide, being shaped as of described polysilicon
Dome-type, metal silicide covers surface on the polysilicon, containing foreign atom in described polysilicon.
A kind of preparation method of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact, described method is:
First, photoetching technique is utilized to make contact hole on launch site by lithography；And at this contact hole, form silicon layer, at this silicon layer
Upper deposition seed atom, forms polysilicon；
Then, utilize low-pressure chemical vapor deposition method to generate metal silicide layer at polysilicon surface, and utilize photoetching technique
The surface of flat metal silicide layer, constitutes heterojunction characteristics Material reinforcement electrode structure；
Utilize said method to prepare two-layer heterojunction characteristics material again on above-mentioned heterojunction characteristics Material reinforcement electrode structure surface to increase
Forceful electric power electrode structure；
The heterojunction characteristics Material reinforcement electrode structure of the superiors generates metal level, by this metal level with emitter electrode even
Connect, constitute bipolar device；
Finally, above-mentioned bipolar device is annealed, thus it is double to obtain a kind of Flouride-resistani acid phesphatase based on the emitter electrode way of contact
Pole device.
A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact of the present invention overcomes in prior art, double
The intrinsic thinking that pole device metal layer and emitter electrode are directly connected to, but before not affecting bipolar device electrical performance indexes
Putting, the metal level being connected bipolar device by heterojunction characteristics Material reinforcement electrode structure is attached by the way of launch site,
Described heterojunction characteristics Material reinforcement electrode structure can make the emission effciency of bipolar device no longer be determined by injection ratio, therefore,
Heavy doping technology can be used to form base, and then inhibit the impact of oxide trap positive charge, thus reach to suppress bipolar
Device produces ionization and the purpose of displacement at space radiation environment, makes the big lifting of bipolar device Radiation hardness 3 to 5 times, protects
Demonstrate,prove electrical performance indexes；The most this emitter electrode connected mode, in addition to having relatively highly anti-radiation performance indications, also has relatively
High driving electric current.
The preparation method of a kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact of the present invention, is remaining
While traditional bipolar device preparation technology, prepare the bipolar device that ionization radiation injury can be greatly lowered, system
Making technique simple, step is few, convenient and swift, and the failure threshold of the bipolar device prepared is the 3 to 5 of existing bipolar device
Times, it is suppressed that bipolar device can produce ionization and displacement effect under space radiation environment.
A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact of the present invention and the preparation side of this bipolar device
Method, in bipolar device radiation hardened technology is applied, has obvious advantage and is widely applied prospect.
Accompanying drawing explanation
Fig. 1 is bipolar device depletion layer expansion structure schematic diagram；
Fig. 2 is the connected mode schematic diagram that emitter stage uses metal/heterojunction characteristics Material reinforcement electrode structure/launch site；
Fig. 3 is emitter stage based on polysilicon to be connected when being connected with conventional electrodes, and bipolar transistor current change in gain amount is with absorption
The variation relation of dosage；In figure, curve A represents the current gain variable quantity variation relation with absorbed dose of conventional emitter,
Curve B represents the current gain variable quantity variation relation with absorbed dose of polysilicon emitter.
Detailed description of the invention
Detailed description of the invention one: illustrate present embodiment with reference to Fig. 2, the one described in present embodiment is based on emitter stage
The Flouride-resistani acid phesphatase bipolar device of electrode contact mode, the metal level of this bipolar device and launch site utilize heterojunction characteristics Material reinforcement
Electrode structure connects.
After bipolar device (especially npn type bipolar transistor) irradiated damage, oxide trap positive charge can cause emitter junction
(N+P ties) and the depletion layer on top layer, base to base region extension (N-type region), increase the recombination current in depletion layer, cause bipolar device
The superfluous base current △ I of partB(after irradiation, base current deducts initial base current) increase, affect bipolar device reliability and
Life-span.Bipolar transistor depletion layer expansion structure schematic diagram, as shown in Figure 1.
Bipolar device described in present embodiment, has broken the routine side that bipolar device metal level is directly connected to emitter electrode
Formula, and have employed the metal level by heterojunction characteristics Material reinforcement electrode structure connection bipolar device and enter by the way of emitter stage
Row connects.Described heterojunction characteristics Material reinforcement electrode structure can make the emission effciency of bipolar device no longer be determined by injection ratio,
And then inhibit the impact of oxide trap positive charge, cause the significantly lifting of bipolar device Radiation hardness, this transmitting
Pole electrode connection mode, in addition to having relatively highly anti-radiation performance indications, also has higher driving electric current.
Detailed description of the invention two: present embodiment is based on emitter electrode contact side to the one described in detailed description of the invention one
The Flouride-resistani acid phesphatase bipolar device of formula is described further, in present embodiment, and described heterojunction characteristics Material reinforcement electrode structure bag
Include: polysilicon and metal silicide, described polysilicon be shaped as dome-type, metal silicide covers surface on the polysilicon,
Containing foreign atom in described polysilicon.
In present embodiment, launch site is initially formed high conductive metallic compound (such as metal silicide), then passes through
Generate polysilicon grain to be connected with launch site by metallic compound, so that the film resistor of the bipolar device after Gai Jining reduces.
Detailed description of the invention three: present embodiment is based on emitter electrode contact side to the one described in detailed description of the invention two
The Flouride-resistani acid phesphatase bipolar device of formula is described further, in present embodiment, and the foreign atom in described polysilicon and bipolar device
Foreign atom type in launch site is identical.
In present embodiment, the foreign atom in heterojunction characteristics Material reinforcement electrode structure and mixing in bipolar device launch site
Hetero atom type is identical.Such as containing n-type doping atom in launch site, then in heterojunction characteristics Material reinforcement electrode structure
Foreign atom is also n-type doping atom, and the reason using this technique is to make launch site and heterojunction characteristics Material reinforcement electricity
Good electric conductivity is produced between electrode structure.
Detailed description of the invention four: illustrate present embodiment with reference to Fig. 2, the one described in present embodiment is based on emitter stage
The preparation method of the Flouride-resistani acid phesphatase bipolar device of electrode contact mode, described method is:
First, photoetching technique is utilized to make contact hole on launch site by lithography；And at this contact hole, form silicon layer, at this silicon layer
Upper deposition seed atom, forms polysilicon 2；
Then, utilize low-pressure chemical vapor deposition method at polysilicon 2 Surface Creation metal silicide layer 1, and utilize photoetching
The surface of technology flat metal silicide layer 1, constitutes heterojunction characteristics Material reinforcement electrode structure；
Utilize said method to prepare two-layer heterojunction characteristics material again on above-mentioned heterojunction characteristics Material reinforcement electrode structure surface to increase
Forceful electric power electrode structure；
The heterojunction characteristics Material reinforcement electrode structure of the superiors generates metal level 3, by this metal level 3 and emitter stage electricity
Pole connects, and constitutes bipolar device；
Finally, above-mentioned bipolar device is annealed, thus it is double to obtain a kind of Flouride-resistani acid phesphatase based on the emitter electrode way of contact
Pole device.
Utilize Co60 irradiation bomb that the bipolar device and the existing bipolar device that obtain in present embodiment are carried out radiation contrast's test,
In experiment, the close rate of Co60 irradiation bomb is 0.1rad/s, and accumulated dose is 100krad, using current gain variable quantity for-60 as
Failure criteria, it is thus achieved that result as shown in Figure 3, it can be seen that compared with traditional structure technique, present embodiment
The failure threshold of the prepared bipolar device with heterojunction characteristics Material reinforcement electrode structure is the 4.4 of existing bipolar device
Times.Comprehensively enter with the irradiation test test result of a batch of bipolar device with heterojunction characteristics Material reinforcement electrode structure
Row contrast, the failure threshold of the bipolar device prepared by present embodiment improves 3 to 5 times.
Detailed description of the invention five: present embodiment is based on emitter electrode contact side to the one described in detailed description of the invention four
The preparation method of the Flouride-resistani acid phesphatase bipolar device of formula is described further, and in present embodiment, the temperature of described annealing is at 400 DEG C
Between 1100 DEG C, annealing time is between 0.5min to 20min.
Detailed description of the invention six: present embodiment is based on emitter electrode contact side to the one described in detailed description of the invention four
The preparation method of the Flouride-resistani acid phesphatase bipolar device of formula is described further, in present embodiment, and described heterojunction characteristics Material reinforcement
Electrode structure includes: polysilicon 2 and metal silicide, described polysilicon 2 be shaped as dome-type, metal silicide covers
Containing foreign atom in polysilicon 2 upper surface, described polysilicon 2.
Detailed description of the invention seven: present embodiment is based on emitter electrode contact side to the one described in detailed description of the invention six
The preparation method of the Flouride-resistani acid phesphatase bipolar device of formula is described further, and in present embodiment, the doping in described polysilicon 2 is former
Son is identical with the foreign atom type in bipolar device launch site.
Claims (4)
1. the preparation method of a Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact, it is characterised in that described side
Method is:
First, photoetching technique is utilized to make contact hole on launch site by lithography；And at this contact hole, form silicon layer, at this silicon layer
Upper deposition seed atom, forms polysilicon (2)；
Then, utilize low-pressure chemical vapor deposition method at polysilicon (2) Surface Creation metal silicide layer (1), and utilize
The surface of photoetching technique flat metal silicide layer (1), constitutes heterojunction characteristics Material reinforcement electrode structure；
Utilize said method to prepare two-layer heterojunction characteristics material again on above-mentioned heterojunction characteristics Material reinforcement electrode structure surface to increase
Forceful electric power electrode structure；
The heterojunction characteristics Material reinforcement electrode structure of the superiors generates metal level (3), by this metal level (3) and transmitting
Pole electrode connects, and constitutes bipolar device；
Finally, above-mentioned bipolar device is annealed, thus it is double to obtain a kind of Flouride-resistani acid phesphatase based on the emitter electrode way of contact
Pole device.
The preparation side of a kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact the most according to claim 1
Method, it is characterised in that the temperature of described annealing between 400 DEG C to 1100 DEG C, annealing time 0.5min to 20min it
Between.
The preparation side of a kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact the most according to claim 1
Method, it is characterised in that described heterojunction characteristics Material reinforcement electrode structure includes: polysilicon (2) and metal silicide, institute
Stating the dome-type that is shaped as of polysilicon (2), metal silicide covers at polysilicon (2) upper surface, described polysilicon (2)
In containing foreign atom.
The preparation side of a kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact the most according to claim 3
Method, it is characterised in that the foreign atom in described polysilicon (2) is identical with the foreign atom type in bipolar device launch site.
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| CN201410136051.7A CN103887330B (en) | 2014-04-04 | 2014-04-04 | A kind of Flouride-resistani acid phesphatase bipolar device based on the emitter electrode way of contact and the preparation method of this bipolar device |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296388A (en) * | 1990-07-13 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Fabrication method for semiconductor devices |
| CN102487077A (en) * | 2010-12-03 | 2012-06-06 | 上海华虹Nec电子有限公司 | Vertical parasitic PNP device in BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) process and preparation method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296388A (en) * | 1990-07-13 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Fabrication method for semiconductor devices |
| CN102487077A (en) * | 2010-12-03 | 2012-06-06 | 上海华虹Nec电子有限公司 | Vertical parasitic PNP device in BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) process and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 抗辐射双极n-p-n晶体管的研究;翟亚红;《物理学报》;20110815;第60卷(第8期);088501-1至088501-5 * |
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