CN110473913A - A kind of reverse-conducting field cut-off type IGBT and preparation method thereof - Google Patents
A kind of reverse-conducting field cut-off type IGBT and preparation method thereof Download PDFInfo
- Publication number
- CN110473913A CN110473913A CN201910859652.3A CN201910859652A CN110473913A CN 110473913 A CN110473913 A CN 110473913A CN 201910859652 A CN201910859652 A CN 201910859652A CN 110473913 A CN110473913 A CN 110473913A
- Authority
- CN
- China
- Prior art keywords
- type
- reverse
- layer
- field
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000013049 sediment Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Abstract
The present invention provides a kind of reverse-conducting field cut-off type IGBT, including substrate；Substrate is P type substrate；The back side of P type substrate is equipped with collector；The front of P type substrate is equipped with electric field stop layer；Electric field stop layer is equipped with drift region away from the one side of P type substrate；The field limiting ring of p-type is equipped in drift region, field limiting ring is equipped with multiple；Field limiting ring is equipped with field oxide and medium of oxides layer；The front of P type substrate is additionally provided with p-well, and the emitter of N-type is equipped in p-well；Covering is equipped with passivation layer on medium of oxides layer.Reverse-conducting field cut-off type IGBT provided by the invention by adjusting processing procedure and increases carrier lifetime control technology, so that reverse-conducting field cut-off type IGBT has high switching speed.
Description
Technical field
The present invention relates to technical field of electronic components, in particular to a kind of reverse-conducting field cut-off type IGBT and its production
Method.
Background technique
IGBT is also known as insulated gate bipolar transistor, is answered by what double pole triode and insulating gate type field effect tube formed
Full-control type-voltage driven type-power semiconductor is closed, has the high input impedance of MOSFET and the low conduction voltage drop two of BJT concurrently
The advantages of aspect.It is obtained in the converter system of the DC such as alternating current generator, inverter, lighting circuit, Traction Drive 600V or more
It is widely applied.
Reverse-conducting insulated gate bipolar transistor is with a kind of international perspective New IGBT device, it will be traditional
The FRD being packaged together with igbt chip inverse parallel, FRD are also known as fast recovery diode, are integrated in same chip with IGBT
On, power density is improved, chip area, cost of manufacture and packaging cost are reduced, while improving the reliability of IGBT.
But reverse-conducting IGBT at present on the market has that switching speed is generally slower.
Summary of the invention
Switching speed to solve the problems, such as existing reverse-conducting IGBT is generally slower, and the present invention now provides a kind of reversed
Field cut-off type IGBT and preparation method thereof is connected, wherein a kind of reverse-conducting field cut-off type IGBT, including substrate；The substrate
For P type substrate；The back side of the P type substrate is equipped with collector；The front of the P type substrate is equipped with electric field stop layer；The electricity
Field stop layer is equipped with drift region away from the one side of the P type substrate；The field limiting ring of p-type, the field limit are equipped in the drift region
It is equipped with multiple；The field limiting ring is equipped with field oxide and medium of oxides layer；
The front of the P type substrate is additionally provided with p-well, and the emitter of N-type is equipped in the p-well；The medium of oxides layer
Upper covering is equipped with passivation layer.
The present invention also provides the production methods of reverse-conducting field cut-off type IGBT as described above a kind of, this method comprises:
Step A, N-type impurity is injected in photoetching in P type substrate, forms inverse guide structure；
Step B up grows the N+ of 5um thickness, forms electric field stop layer；
Step C grows the N- of one layer of 49um, the drift region of formation on FS EPI；
Step D, then up grow the N- of 9um thickness, the production for subsequent MOS；
Then step E carries out surface field oxidation, annealing, Lithography Etching to it；
Step F carries out high annealing after injecting N-type impurity comprehensively；
Step G, carries out the growth of gate oxide, and depositing polysilicon etches to form grid using gate lithography；
Step H injects B11 comprehensively and forms PW channel region；Photoetching injects As and forms N+ emitter region；On surface, growth thickness is
The medium of oxides layer (70) of 0.5um, then carry out Lithography Etching, B11 ion implanting and annealing and form contact zone；It forms sediment later
Product metal lithographic etches to form metal emitting (81) and deposit passivation layer (90) Lithography Etching formation passivation；
Step I by grinding back surface to inverse guide structure, then polishes it, is cleaned, being evaporated, alloy formation back metal,
Form collector；
Step J irradiates wafer using high-power electron beam, introduces lattice defect, reduces the carrier longevity of drift region
Life.
Further, the N-type impurity is P31.
Further, oxide thickness is 7500A in the step E.
Further, annealing temperature is 1200 DEG C, the duration 6 hours in the step E.
Further, the temperature of the step F high temperature annealing is 1000-1200 DEG C, and the time is 5-7 hours.
Further, in the step H medium of oxides layer with a thickness of 0.5um.
Further, irradiation dose is greater than 10KGS in the step J.
Reverse-conducting field cut-off type IGBT provided by the invention carries out high annealing after injection P31 comprehensively, to accelerate
Conducting and reduction pressure drop；Secondly, being irradiated using high-power electron beam to wafer, lattice defect is introduced, drift region is reduced
Carrier lifetime, when FRD is changed to reverse-biased from positively biased, the recombination velocity of carrier becomes faster, to improve switching speed.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of reverse-conducting field cut-off type IGBT provided by the invention.
Appended drawing reference:
10 P type substrate, 20 collector, 30 electric field stop layer
40 drift region, 50 field limiting ring, 60 field oxide
70 medium of oxides layer, 80 p-well, 81 emitter
90 passivation layers
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply opposite
Importance.
The present invention provides a kind of reverse-conducting field cut-off type IGBT and preparation method thereof, wherein a kind of reverse-conducting field
Cut-off type IGBT, as shown in Figure 1, including substrate；The substrate is P type substrate 10；The back side of the P type substrate 10 is equipped with current collection
Pole 20；The front of the P type substrate 10 is equipped with electric field stop layer 30；The electric field stop layer 30 is away from the P type substrate 10
It is equipped with drift region 40 on one side；The field limiting ring 50 of p-type is equipped in the drift region 40, the field limiting ring 50 is equipped with multiple；The field
It limits ring 50 and is equipped with field oxide 60 and medium of oxides layer 70；
The front of the P type substrate 10 is additionally provided with p-well 80, and the emitter 81 of N-type is equipped in the p-well 80；The oxidation
Covering is equipped with passivation layer 90 on object dielectric layer 70.
The present invention also provides the production method of as above described in any item reverse-conducting field cut-off type IGBT a kind of, the party
Method includes: step A, and N-type impurity is injected in photoetching in P type substrate 10, and the N-type impurity in the present embodiment is P31/150Kev/
3e15CM-3, to form inverse guide structure；
Step B up grows N+, the concentration 2E18 of 5um thickness, forms electric field stop layer 30；
Step C grows the N- of one layer of 49um, concentration 1.8E14CM-3, the drift region 40 of formation on FS EPI；
Step D, then up grow the N- of 9um thickness, the production for subsequent MOS；
Then step E carries out surface field oxidation, annealing, Lithography Etching to it, wherein oxide thickness 7500A, annealing
Temperature is 1200 DEG C, and annealing time is 6 hours；
Step F, comprehensively inject P31/100Kev/2E12CM-3 after carry out high annealing, temperature at 1000-1200 DEG C, when
Between be 5-7 hours.Conducting is helped speed up in this way and reduces pressure drop.
Step G, carries out the growth of gate oxide, and depositing polysilicon etches to form grid using gate lithography；
Step H injects B11/90KeV/1E12CM-3 comprehensively and forms PW channel region；As/60Kev/8E15CM- is injected in photoetching
3 form N+ emitter region；On surface, growth thickness is the medium of oxides layer 70 of 0.5um, then carries out Lithography Etching, B11/20Kev/
2E15 ion implanting and annealing form contact zone, are deposited metal lithographic later and etch to form metal emitting 81 and deposit blunt
Change 90 Lithography Etching of layer and forms passivation；
Step I by grinding back surface to inverse guide structure, then polishes it, is cleaned, is evaporated, is closed after completing positive technique
Gold forms back metal, forms collector 20；
Step J irradiates wafer using high-power electron beam, and irradiation dose is greater than 10KGS, introduces lattice defect, drop
The carrier lifetime in low drifting area 40, when FRD is changed to reverse-biased from positively biased, the recombination velocity of carrier becomes faster, and opens to improve
Close speed.
Reverse-conducting field cut-off type IGBT provided by the invention carries out high annealing after injection P31 comprehensively, to accelerate
Conducting and reduction pressure drop；Secondly, being irradiated using high-power electron beam to wafer, lattice defect is introduced, drift region is reduced
Carrier lifetime, when FRD is changed to reverse-biased from positively biased, the recombination velocity of carrier becomes faster, to improve switching speed.
Preferably, in steph, after B11/20Kev/2E15 ion implanting and annealing form contact zone, also with conventional
Deposit metal films method silicon face deposit one layer of 0.001um or more platinum film, in inert gas shielding carry out platinum silicon
Alloying makes the contact interface of silicon and platinum form one layer of platinum silicon alloy layer, removes the platinum layer on surface layer later, leaves platinum silicon alloy
Layer carries out platinum and draws annealing, and annealing temperature is 670-750 DEG C, duration 20-90 minutes.It is conventionally deposited later
Metal lithographic etches to form metal emitting 81 and deposit 90 Lithography Etching of passivation layer formation passivation.
After completing positive technique, by grinding back surface to inverse guide structure, then it is polished, is cleaned, is evaporated, alloy is formed
Back metal does collector 20.Pt atom is penetrated into due to drift region 40 and constitutes complex centre, reduces the carrier of drift region 40
In the service life, when FRD is changed to reverse-biased from positively biased, the recombination velocity of carrier becomes faster, to improve switching speed.
Although herein more has used substrate, metal layer, electric field stop layer, has deviated the arts such as area and field limiting ring
Language, but it does not exclude the possibility of using other terms.The use of these items is only for be more convenient to describe and explain this
The essence of invention；Being construed as any additional limitation is disagreed with spirit of that invention.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (8)
1. a kind of reverse-conducting field cut-off type IGBT, it is characterised in that: including substrate；The substrate is P type substrate (10)；It is described
The back side of P type substrate (10) is equipped with collector (20)；The front of the P type substrate (10) is equipped with electric field stop layer (30)；It is described
One side of the electric field stop layer (30) away from the P type substrate (10) is equipped with drift region (40)；P-type is equipped in the drift region (40)
Field limiting ring (50), the field limiting ring (50) be equipped with it is multiple；The field limiting ring (50) is equipped with field oxide (60) and oxide
Dielectric layer (70)；
The front of the P type substrate (10) is additionally provided with p-well (80), and the emitter (81) of N-type is equipped in the p-well (80)；It is described
Covering is equipped with passivation layer (90) on medium of oxides layer (70).
2. a kind of production method of reverse-conducting field cut-off type IGBT as described in claim 1, it is characterised in that: step A, In
N-type impurity is injected in photoetching in P type substrate (10), forms inverse guide structure；
Step B up grows the N+ of 5um thickness, is formed electric field stop layer (30)；
Step C grows the N- of one layer of 49um, the drift region (40) of formation on FS EPI；
Step D, then up grow the N- of 9um thickness, the production for subsequent MOS；
Then step E carries out surface field oxidation, annealing, Lithography Etching to it；
Step F carries out high annealing after injecting N-type impurity comprehensively；
Step G, carries out the growth of gate oxide, and depositing polysilicon etches to form grid using gate lithography；
Step H injects B11 comprehensively and forms PW channel region；Photoetching injects As and forms N+ emitter region；On surface, growth thickness is
The medium of oxides layer (70) of 0.5um, then carry out Lithography Etching, B11 ion implanting and annealing and form contact zone；It forms sediment later
Product metal lithographic etches to form metal emitting (81) and deposit passivation layer (90) Lithography Etching formation passivation；
Step I by grinding back surface to inverse guide structure, then polishes it, is cleaned, being evaporated, alloy formation back metal, being formed
Collector (20)；
Step J irradiates wafer using high-power electron beam, introduces lattice defect, reduces the carrier longevity of drift region (40)
Life.
3. the production method of reverse-conducting field cut-off type IGBT according to claim 2, it is characterised in that: the N-type is miscellaneous
Matter is P31.
4. the production method of reverse-conducting field cut-off type IGBT according to claim 2, it is characterised in that: the step E
Middle oxide thickness is 7500A.
5. the production method of reverse-conducting field cut-off type IGBT according to claim 3, it is characterised in that: the step E
Middle annealing temperature is 1200 DEG C, the duration 6 hours.
6. the production method of reverse-conducting field cut-off type IGBT according to claim 4, it is characterised in that: the step F
The temperature of high temperature annealing is 1000-1200 DEG C, and the time is 5-7 hours.
7. according to the production method of the described in any item reverse-conducting field cut-off type IGBT of claim 2-5, it is characterised in that: institute
State medium of oxides layer (70) in step H with a thickness of 0.5um.
8. the production method of reverse-conducting field cut-off type IGBT according to claim 6, it is characterised in that: the step J
Middle irradiation dose is greater than 10KGS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910859652.3A CN110473913A (en) | 2019-09-11 | 2019-09-11 | A kind of reverse-conducting field cut-off type IGBT and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910859652.3A CN110473913A (en) | 2019-09-11 | 2019-09-11 | A kind of reverse-conducting field cut-off type IGBT and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110473913A true CN110473913A (en) | 2019-11-19 |
Family
ID=68515640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910859652.3A Pending CN110473913A (en) | 2019-09-11 | 2019-09-11 | A kind of reverse-conducting field cut-off type IGBT and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110473913A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116525656A (en) * | 2023-07-04 | 2023-08-01 | 四川奥库科技有限公司 | Reverse-conduction IGBT device with collector side containing floating space area |
| CN117577675A (en) * | 2024-01-15 | 2024-02-20 | 汉轩微电子制造(江苏)有限公司 | IGBT device embedded with FRD and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080296612A1 (en) * | 2007-04-27 | 2008-12-04 | Gerhard Schmidt | Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device |
| CN102800591A (en) * | 2012-08-31 | 2012-11-28 | 电子科技大学 | Preparation method for FS-IGBT device |
| CN104332495A (en) * | 2013-07-22 | 2015-02-04 | 无锡华润上华半导体有限公司 | Insulated-gate bipolar transistor and manufacturing method thereof |
| CN104425251A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Manufacturing method of reverse conduction FS IGBT (field stop insulated gate bipolar transistor) |
| CN106486360A (en) * | 2015-08-31 | 2017-03-08 | 上海联星电子有限公司 | A kind of inverse conductivity type igbt and preparation method thereof |
| CN210073859U (en) * | 2019-09-11 | 2020-02-14 | 厦门芯达茂微电子有限公司 | Reverse conducting field stop type IGBT |
-
2019
- 2019-09-11 CN CN201910859652.3A patent/CN110473913A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080296612A1 (en) * | 2007-04-27 | 2008-12-04 | Gerhard Schmidt | Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device |
| CN102800591A (en) * | 2012-08-31 | 2012-11-28 | 电子科技大学 | Preparation method for FS-IGBT device |
| CN104332495A (en) * | 2013-07-22 | 2015-02-04 | 无锡华润上华半导体有限公司 | Insulated-gate bipolar transistor and manufacturing method thereof |
| CN104425251A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Manufacturing method of reverse conduction FS IGBT (field stop insulated gate bipolar transistor) |
| CN106486360A (en) * | 2015-08-31 | 2017-03-08 | 上海联星电子有限公司 | A kind of inverse conductivity type igbt and preparation method thereof |
| CN210073859U (en) * | 2019-09-11 | 2020-02-14 | 厦门芯达茂微电子有限公司 | Reverse conducting field stop type IGBT |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116525656A (en) * | 2023-07-04 | 2023-08-01 | 四川奥库科技有限公司 | Reverse-conduction IGBT device with collector side containing floating space area |
| CN116525656B (en) * | 2023-07-04 | 2023-10-03 | 四川奥库科技有限公司 | Reverse-conduction IGBT device with collector side containing floating space area |
| CN117577675A (en) * | 2024-01-15 | 2024-02-20 | 汉轩微电子制造(江苏)有限公司 | IGBT device embedded with FRD and manufacturing method thereof |
| CN117577675B (en) * | 2024-01-15 | 2024-04-12 | 汉轩微电子制造(江苏)有限公司 | IGBT device embedded with FRD and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9768246B2 (en) | Semiconductor device and method for producing semiconductor device | |
| JP5104314B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN106128946B (en) | The manufacturing method of semiconductor device and semiconductor device | |
| JP5033335B2 (en) | Semiconductor device and inverter device using the same | |
| US9870923B2 (en) | Semiconductor device and method of manufacturing the semiconductor device | |
| CN107431087A (en) | Semiconductor device and its manufacture method | |
| CN104904020A (en) | Diode and power conversion device | |
| CN110504310B (en) | RET IGBT with self-bias PMOS and manufacturing method thereof | |
| JP6225649B2 (en) | Insulated gate bipolar transistor and manufacturing method thereof | |
| JP2019102493A (en) | Silicon carbide semiconductor device and silicon carbide semiconductor device manufacturing method | |
| US20200105866A1 (en) | Carrier injection control fast recovery diode structures and methods of fabrication | |
| CN110473913A (en) | A kind of reverse-conducting field cut-off type IGBT and preparation method thereof | |
| CN110429077B (en) | Single-particle burnout resistant structure suitable for power semiconductor device | |
| CN110504260B (en) | Transverse groove type IGBT with self-bias PMOS and preparation method thereof | |
| CN110473917A (en) | A kind of transversal I GBT and preparation method thereof | |
| US9991336B2 (en) | Semiconductor device, method for manufacturing the same, and power conversion system | |
| CN105814693A (en) | Semiconductor device and semiconductor device manufacturing method | |
| JP6268117B2 (en) | Semiconductor device, manufacturing method thereof, and power conversion system | |
| CN210073859U (en) | Reverse conducting field stop type IGBT | |
| CN104347403B (en) | A kind of manufacture method of insulated gate bipolar transistor | |
| CN109742030A (en) | The electron irradiation of threshold voltage stabilization restores SJ-VDMOS preparation method fastly | |
| CN110504315B (en) | Groove-type insulated gate bipolar transistor and preparation method thereof | |
| JP2890519B2 (en) | Manufacturing method of conductivity modulation type MOSFET | |
| CN216980575U (en) | Fast recovery diode | |
| CN117678078A (en) | Semiconductor device and power conversion device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |