CN106486360A - A kind of inverse conductivity type igbt and preparation method thereof - Google Patents
A kind of inverse conductivity type igbt and preparation method thereof Download PDFInfo
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- CN106486360A CN106486360A CN201510550928.1A CN201510550928A CN106486360A CN 106486360 A CN106486360 A CN 106486360A CN 201510550928 A CN201510550928 A CN 201510550928A CN 106486360 A CN106486360 A CN 106486360A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000011084 recovery Methods 0.000 description 11
- 239000002184 metal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention is provided and discloses a kind of RC-IGBT and preparation method thereof, and the preparation method includes：A substrate is provided, the substrate has drift region；Well region is formed in surface over the substrate；Source region is formed in the well region；Collecting zone is formed in the substrate lower surface；Form electrode structure at right side and back electrode structure；Carrier lifetime control is carried out to the drift region, reduces the carrier lifetime of the drift region.The preparation method is by carrying out carrier lifetime control to drift region, reduce drift region carrier lifetime, FRD from positively biased be converted to reverse-biased when, the carrier for being injected into drift region 11 quickly can be combined, turn-off speed is improve, and then improves switching speed.
Description
Technical field
The present invention relates to semiconductor device processing technology field, in particular, is related to a kind of inverse conductivity type exhausted
Edge grid bipolar transistor and preparation method thereof.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviation IGBT) be by
The compound full-control type electricity that double pole triode (BJT) and insulating gate type field effect tube (MOSFET) constitute
Pressure drive-type power semiconductor, has the high input impedance of MOSFET element and power transistor concurrently (i.e.
Huge transistor, abbreviation GTR) speed-sensitive switch characteristic advantage, therefore, IGBT device extensively should
Use the fields such as alternating current generator, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.
Inverse conductivity type igbt (RC-IGBT, Reverse Conducting-Insulated Gate
Bipolar Transistor) be with a kind of prospective New IGBT device in the world, it by traditional with
The fast recovery diode (FRD, Fast Recovery Diode) that igbt chip inverse parallel is packaged together
Integrated with IGBT improve power density on the same chip, reduce chip area, cost of manufacture with
And packaging cost, while improve the reliability of IGBT.
With reference to the structural representation that Fig. 1, Fig. 1 are a kind of existing RC-IGBT, including：Drift region 11；
Well region 12 in 11 upper surface of drift region；Source region 13 in well region 12.In 11 upper table of drift region
Face is provided with grid structure 14 and the metal emitting 15 positioned at well region 12 with 13 upper surface of source region.In drift
The lower surface for moving area 11 is provided with collecting zone 16, and 16 lower surface of collecting zone is provided with metal collector 17.
Wherein, well region 12 is that p-type is lightly doped (P-) area, is loop configuration；Source region 13 is for being N-type heavy doping (N+)
Area, is loop configuration；Drift region 11 is lightly doped (N-) area for N-type；Collecting zone 16 is p-type heavy doping (P+)
Area and the alternating structure in N+ area.
Switching speed is to weigh an important parameter of RC-IGBT performance, existing RC-IGBT switch speed
Degree is slower.
Content of the invention
For solving the above problems, a kind of RC-IGBT and preparation method thereof is embodiments provided, is carried
The high switching speed of RC-IGBT.
For achieving the above object, the present invention provides following scheme：
A kind of preparation method of RC-IGBT, the preparation method include：
A substrate is provided, the substrate has drift region；
Well region is formed in surface over the substrate；
Source region is formed in the well region；
Collecting zone is formed in the substrate lower surface；
Form electrode structure at right side and back electrode structure；
Carrier lifetime control is carried out to the drift region, reduces the carrier lifetime of the drift region.
Preferably, in above-mentioned preparation method, described carrier lifetime is carried out to the drift region it be controlled to
Electron irradiation is carried out to the substrate top surface.
Preferably, in above-mentioned preparation method, the irradiation dose of the electron irradiation is more than 10KGS.
Preferably, the carrier of the drift region after carrier lifetime control, in above-mentioned preparation method, is carried out
Life time is 10ns-10000ns, including endpoint value.
Present invention also offers a kind of RC-IGBT, the RC-IGBT include：
Substrate, the substrate have drift region；
The well region being arranged in the substrate top surface；
The source region being arranged in the well region；
The collecting zone being arranged in the substrate lower surface；
It is arranged on the electrode structure at right side of the substrate top surface；
It is arranged on the back electrode structure of the substrate lower surface；
Wherein, the drift region is the semiconductor layer through electron irradiation.
Preferably, in above-mentioned RC-IGBT, the carrier life time of the drift region is
10ns-10000ns, including endpoint value.
By foregoing description, the preparation method that the present invention is provided includes：One substrate, the lining are provided
Bottom has drift region；Well region is formed in surface over the substrate；Source region is formed in the well region；?
Collecting zone is formed in the substrate lower surface；Form electrode structure at right side and back electrode structure；To institute
Stating drift region carries out carrier lifetime control, reduces the carrier lifetime of the drift region.The making side
Method reduces the carrier lifetime of drift region by carrying out carrier lifetime control to drift region, and FRD is from just
When deflection is changed to reverse-biased, the carrier for being injected into drift region 11 quickly can be combined, and improve pass
Disconnected speed, and then improve switching speed.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Apply accompanying drawing to be used needed for example or description of the prior art to be briefly described, it should be apparent that, below
Accompanying drawing in description is only embodiments of the invention, for those of ordinary skill in the art, not
On the premise of paying creative work, other accompanying drawings can also be obtained according to the accompanying drawing for providing.
Fig. 1 is a kind of structural representation of existing RC-IGBT；
A kind of schematic flow sheet of the preparation method of RC-IGBT that Fig. 2-Fig. 7 is provided for the embodiment of the present application.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
The every other embodiment obtained under the premise of going out creative work, belongs to the scope of protection of the invention.
RC-IGBT as shown in Figure 1, two poles of the N+ area formation of the collecting zone 14 relative with the back side of well region 13
Tubular construction, i.e. FRD, can conduct reverse current (from emitter stage 15 to the electric current of colelctor electrode 17).FRD
During conducting, the well region 12 of P- injects hole to drift region 11.When IGBT is turned on, the P+ area of collecting zone 14 to
Hole is injected in drift region 11.There is reverse recovery current in FRD, FRD from positively biased be converted to reverse-biased when, injection
Carrier to drift region 11 can not disappear at once, thus result in reversing the current, referred to as Reverse recovery electricity
Stream.The presence of reverse recovery current causes FRD from the time being just biased to required for reverse blocking, referred to as instead
To recovery time, reverse recovery time can reduce the switching speed of RC-IGBT.
By reduce the P- area for forming well region 12 and formed collecting zone 16 P+ area the mixing of p-type ion
Miscellaneous concentration, can reduce well region 12 and collecting zone 14 and the hole of drift region is injected, be i.e. drift region 11
Carrier concentration will be lowered, therefore carrier disappear required for time shorten, so as to FRD shorten
Reverse recovery time, improve the switching speed of RC-IGBT.
Although said method can reduce the reverse recovery time of FRD, reduce well region 12 and collection
The conducting voltage for causing RC-IGBT is increased by the p-type ion concentration in electric area 16, and quiescent dissipation increases.And drop
The p-type ion concentration of low well region 12 will make easy break-through when reverse-biased of well region 12, make the resistance to pressure drop of RC-IGBT
Low.
For solving the above problems, the embodiment of the present application provides a kind of preparation method of RC-IGBT, reference
A kind of flow process of the preparation method of RC-IGBT that Fig. 2-Fig. 7, Fig. 2-Fig. 7 is provided for the embodiment of the present application
Schematic diagram, including：
Step S11：As shown in Fig. 2 providing a substrate, the substrate has drift region 21.
Can be using the substrate of N- so that drift region 21 is N- area.
Step S12：As shown in figure 3, forming well region 22 over the substrate in surface.
Using mask plate, p-type ion doping is carried out to the substrate top surface, form the well region 22 of P+.
Fig. 3 is sectional drawing, and well region 22 is loop configuration.
Step S13：As shown in figure 4, forming source region 23 in the well region 22.
Using template, N-type ion doping is carried out to substrate top surface, form the source region 23 of N+.Equally,
Source region 23 is loop configuration.
Step S14：As shown in figure 5, forming collecting zone 26 in the substrate lower surface.
The lower surface to substrate is needed to carry out a N-type ion doping and a p-type ion doping,
Multiple alternatively distributed N+ areas and P+ area is formed in substrate lower surface.Ion doping twice is needed, every time
Doping is needed using corresponding mask plate.
Step S15：As shown in fig. 6, forming electrode structure at right side and back electrode structure.
The electrode structure at right side includes：It is arranged on grid structure 24 and the metal transmitting of substrate top surface
Pole 25.The back electrode structure is the metal collector 27 for being arranged on substrate lower surface.
Step S16：As shown in fig. 7, carrier lifetime control is carried out to the drift region, reduce the drift
Move the carrier lifetime in area 21.
In the present embodiment, described carrier lifetime is carried out to the drift region 21 it is controlled to the substrate
Upper surface carries out electron irradiation.Irradiation is carried out to substrate top surface using high-power electron beam, to drift region 21
Global life control is carried out, reduces its carrier lifetime, so as to the recombination velocity of carrier is accelerated, make
The turn-off characteristic for obtaining RC-IGBT accelerates, and improves the switching speed of RC-IGBT.
Reduce the carrier lifetime of drift region, when FRD is converted to reverse-biased from positively biased, be injected into drift region
11 carrier can be combined at once, shorten reverse recovery current and reverse recovery time, improve
Turn-off speed, improves the switching speed of device.
The irradiation dose of the electron irradiation is more than 10KGS so that carry out the drift after carrier lifetime control
The carrier life time for moving area 21 is 10ns-10000ns, including endpoint value, in order to be combined faster
The P+ area injected holes of the well region 22 of P+ and collecting zone, improves and closes end speed, improves RC-IGBT
Switching speed.Preferably, the carrier life time of control drift region 21 is 150ns, now, energy
Enough compound faster holes.
Preparation method described in the embodiment of the present application, does not change structure and its well region and the collecting zone of RC-IGBT
P-type ion doping concentration, be not result in device conducting voltage increase, quiescent dissipation will not be increased,
It is not easy conducting when well region is reverse-biased, the pressure performance of device will not be reduced.
Global control is carried out to the carrier lifetime of drift region by electron irradiation, Electron irradiation technology is simple,
Low cost, and the penetration capacity of electronics is strong, and the carrier lifetime of the drift region of whole device can be caused equal
Reduce, effectively reduce the turn-off time of RC-IGBT, improve its switching speed.
Based on above-described embodiment, the embodiment of the present application additionally provides a kind of RC-IGBT, and the RC-IGBT can
With as shown in fig. 7, comprises：Substrate, the substrate have drift region 21；It is arranged on the substrate upper table
Well region 22 in face；The source region 23 being arranged in the well region 22；It is arranged in the substrate lower surface
Collecting zone 26；It is arranged on the electrode structure at right side of the substrate top surface；It is arranged on the substrate following table
The back electrode structure in face；Wherein, the drift region 22 is the semiconductor layer through electron irradiation.
The carrier life time of the drift region 22 is 10ns-10000ns, including endpoint value, it is preferred that
The carrier life time for arranging drift region 22 is 150ns.
It should be noted that RC-IGBT described in the embodiment of the present application is above-mentioned preparation method preparing
RC-IGBT, identical similarity refer to above-described embodiment, will not be described here.
The drift region 22 of RC-IGBT described in the present embodiment carries out carrier lifetime control by electron irradiation,
Reduce carrier lifetime, improve carrier recombination velocity, therefore, the RC-IGBT have open faster
Close speed.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use
The present invention.Multiple modifications to these embodiments will be aobvious and easy for those skilled in the art
See, generic principles defined herein can without departing from the spirit or scope of the present invention,
Realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein,
And it is to fit to the most wide scope consistent with principles disclosed herein and features of novelty.
Claims (6)
1. a kind of preparation method of RC-IGBT, it is characterised in that include：
A substrate is provided, the substrate has drift region；
Well region is formed in surface over the substrate；
Source region is formed in the well region；
Collecting zone is formed in the substrate lower surface；
Form electrode structure at right side and back electrode structure；
Carrier lifetime control is carried out to the drift region, reduces the carrier lifetime of the drift region.
2. preparation method according to claim 1, it is characterised in that described the drift region is entered
Row carrier lifetime is controlled to carries out electron irradiation to the substrate top surface.
3. preparation method according to claim 2, it is characterised in that the irradiation of the electron irradiation
Dosage is more than 10KGS.
4. preparation method according to claim 1, it is characterised in that carry out carrier lifetime control
The carrier life time of drift region afterwards is 10ns-10000ns, including endpoint value.
5. a kind of RC-IGBT, it is characterised in that include：
Substrate, the substrate have drift region；
The well region being arranged in the substrate top surface；
The source region being arranged in the well region；
The collecting zone being arranged in the substrate lower surface；
It is arranged on the electrode structure at right side of the substrate top surface；
It is arranged on the back electrode structure of the substrate lower surface；
Wherein, the drift region is the semiconductor layer through electron irradiation.
6. RC-IGBT according to claim 5, it is characterised in that the carrier of the drift region
Life time is 10ns-10000ns, including endpoint value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510550928.1A CN106486360A (en) | 2015-08-31 | 2015-08-31 | A kind of inverse conductivity type igbt and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510550928.1A CN106486360A (en) | 2015-08-31 | 2015-08-31 | A kind of inverse conductivity type igbt and preparation method thereof |
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| CN106486360A true CN106486360A (en) | 2017-03-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473913A (en) * | 2019-09-11 | 2019-11-19 | 厦门芯达茂微电子有限公司 | A kind of reverse-conducting field cut-off type IGBT and preparation method thereof |
-
2015
- 2015-08-31 CN CN201510550928.1A patent/CN106486360A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473913A (en) * | 2019-09-11 | 2019-11-19 | 厦门芯达茂微电子有限公司 | A kind of reverse-conducting field cut-off type IGBT and preparation method thereof |
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Application publication date: 20170308 |