CN103885262A - TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof - Google Patents
TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
Abstract
The invention discloses a TFT-LCD (thin film transistor-liquid crystal display) array substrate and a data line disconnection restoring method thereof. The TFT-LCD array substrate comprises a first metal layer, a second metal layer and a transparent electrode layer which are sequentially arranged from the bottom to the top, grid lines and common electrode lines are formed in the first metal layer, data lines are formed in the second metal layer, a pixel electrode is formed in the transparent electrode layer, the grid lines and the data lines are intersected to form pixel areas, the pixel electrode and the common electrode lines are mounted in the pixel areas, each common electrode line comprises a first electrode line and a second electrode line which are connected with each other, shadows of the second electrode lines and the data lines on the second metal layer are parallel to each other, and shadows of the first electrode lines and the data lines on the second metal layer are intersected.
Description
Technical field
The present invention relates to a kind of TFT-LCD Substrate manufacture field, relate in particular to the restorative procedure of a kind of TFT-LCD array base palte and broken data wire thereof.
Background technology
Along with the development of information society, people have obtained growth to the demand of display device.In order to meet this continuous growth ground demand, flat panel display equipment is such as liquid crystal display device (Liquid Crystalline Display LCD), plasma display device (Plasma Display Panel, PDP), OLED(Organic Light-Emitting Diode) display device etc. all obtained swift and violent development.In the middle of flat-panel display device, liquid crystal display device, due to the advantage that its weight is low, volume is little, energy consumption is low, is progressively replacing cold cathode display device.
Initial liquid crystal display device is passive matrix, and so-called passive matrix is that voltage is directly added on the upper/lower electrode of pixel.Drive liquid crystal by the voltage difference on upper/lower electrode, form bright showing slinkingly and show.Main flow is all to use thin film transistor (TFT) (Thin Film Transistor, TFT) to drive liquid crystal substantially at present, and TFT switch is opened and turn-offed under signal controlling, different voltage is write to the pixel electrode of infrabasal plate (array base palte).After writing, TFT turn-offs under signal function, voltage is maintained, thereby realized high resolving power and high gray number.Wherein the control signal of TFT is inputted by grid line, and the voltage on pixel electrode is inputted by data line.
At present TFT liquid crystal display device substantially resolution can realize 1920 × 1080, what even have can reach 3840 × 2160 resolution.On each liquid crystal display device, there are millions of pixels and approach 10,000 data lines or grid line.So multi-thread, there is not broken string and be difficult to accomplish.So in actual production process, generally all can introduce the reparation flow process of broken string.The wherein quality of its restorative procedure, has very large impact for repairing success ratio.
Conventional restorative procedure is at present: adopt Laser CVD (chemical vapor deposition) to repair.Its principle be by laser catalysis tungsten carbonyl decompose, tungsten metal is deposited on substrate surface, play conductor be used for realization.Restorative procedure comprises: the position growing metal tungsten by Laser CVD at broken string; By Laser Cut the pixel electrode ITO(Indium Tin Oxides on side) interrupt; By two end points of lf, allow the metal routing below tungsten and dielectric film link together.This renovation technique is more applicable for general array base palte.Not very high because its each tunic is thick, general 0.3～0.4um, the thickest 0.6um that also generally can not exceed.In the time repairing, the section that the thickness of these different-thickness causes is poor relatively little; So tungsten is relatively not easy broken string in deposition, reparation success ratio is also relatively secure.
But, for the TFT-LCD array base palte that adopts COA technology (Color Filter On Array) to make, wherein the thickness of chromatograph (RGB layer) is all thicker, reach 3um～5um, break so in the manner described above while reparation, the thickness of its melting is larger, and the contact degree of depth is darker, tungsten in deposition is very easy to broken string, causes repairing success ratio and reduces.
Therefore need to provide a kind of can raising to adopt the broken string of the TFT-LCD array base palte that COA technology makes to repair the broken data wire restorative procedure of success ratio.
Summary of the invention
The object of the invention is to for above-mentioned defect, a kind of TFT-LCD array base palte is provided, a kind of broken data wire restorative procedure that can improve this TFT-LCD array base palte reparation success ratio is also provided simultaneously.
A kind of TFT-LCD array base palte provided by the invention, comprise the first metal layer setting gradually from bottom to top, the second metal level and transparent electrode layer, in described the first metal layer, be formed with grid line and common electrode wire, in described the second metal level, be formed with data line, in described transparent electrode layer, be formed with pixel electrode, described grid line and data line intersect to form pixel region, described pixel electrode and described common electrode wire are installed in described pixel region, described common electrode wire comprises interconnective the first electrode wires and the second electrode wires, the projection on described the second metal level of described the second electrode wires and described data line is parallel to each other, described the first electrode wires is crossing with the projection of described data line on described the second metal level.
In above-mentioned TFT-LCD array base palte, described the first electrode wires is the one-piece construction that is parallel to described grid line, and described the second electrode wires is the intermittent configuration perpendicular to described grid line.
In above-mentioned TFT-LCD array base palte, described the second electrode wires comprises the one the second electrode wires and the second sub-electrode lines that are arranged in parallel, the described common electrode wire H type structure that described the first sub-electrode line, the second sub-electrode line and the first electrode wires are interconnected to constitute of serving as reasons.
Above-mentioned TFT-LCD array base palte, described TFT-LED array base palte also comprises connecting line, described connecting line and described pixel electrode arrange with layer, described connecting line is crossed on described grid line, one end of described connecting line is connected with the second sub-electrode line of described grid line one side, and the other end of described connecting line is connected with the second sub-electrode line of described grid line opposite side.
In above-mentioned TFT-LCD array base palte, the described common electrode wire that lays respectively at every described grid line both sides is interconnected by described connecting line.
The present invention also provides a kind of broken data wire restorative procedure of TFT-LCD array base palte, comprising:
S1, find out the position of the breakpoint of data line;
S2, employing method for laser welding couple together the data line of described breakpoint both sides by common electrode wire; Wherein, described common electrode wire comprises interconnective the first electrode wires and the second electrode wires, the projection on described the second metal level of described the second electrode wires and described data line is parallel to each other, and described the first electrode wires is crossing with the projection of described data line on described the second metal level; Adopt laser cutting method to disconnect being connected of common electrode wire in the pixel region of described breakpoint place and common electrode wire in adjacent pixel regions.
In above-mentioned broken data wire restorative procedure, described step S2 comprises:
S21, adopt method for laser welding by the described first electrode wires welding crossing with its projection on described the second metal level respectively of the data line of breakpoint both sides, at the intersection point place formation fusion point of the projection of described data line and described the first electrode wires;
S22, adopt laser cutting method that thereby the first electrode wires in the pixel region of the adjacent both sides of described fusion point is disconnected to being connected of common electrode wire in the pixel region of described breakpoint place and common electrode wire in adjacent pixel regions.
Above-mentioned broken data wire restorative procedure, described step S2 comprises:
The described data line of S23, disconnection by described the first electrode wires, be connected to described the first electrode wires and described in another between the first electrode wires and the second electrode wires of being communicated with and the first electrode wires connection described in another.
In above-mentioned broken data wire restorative procedure, described step S2 comprises:
S21, employing method for laser welding, by described the second electrode wires welding adjacent thereto respectively of the data line of breakpoint both sides, form fusion point between described data line and described the second electrode wires;
S22, adopt laser cutting method that thereby the first electrode wires in the pixel region of the adjacent both sides of described fusion point is disconnected to being connected of common electrode wire in the pixel region of described breakpoint place and common electrode wire in adjacent pixel regions.
Above-mentioned broken data wire restorative procedure, described step S2 also comprises:
The described data line of S23, disconnection is communicated with by described the second electrode wires.
Implementing beneficial effect of the present invention is: the present invention is by the on line using the common electrode wire in pixel region as repair data line breakpoint, by the data line welding of itself and data line breakpoint both sides, disconnect being connected of common electrode wire of common electrode wire in the pixel region of breakpoint place and adjacent pixel regions simultaneously, thereby realized the reparation of data line breakpoint.This reparation has overcome the poor problem of section on traditional restorative procedure, has improved reparation success ratio.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of the basic embodiment of TFT-LCD array provided by the invention;
Fig. 2 is the schematic diagram of TFT-LCD array base palte repair data line broken string of the present invention;
Fig. 3 is the second embodiment schematic diagram of TFT-LCD array base palte repair data broken string of the present invention.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the planimetric map of TFT-LCD array base palte the first embodiment of the present invention, and what reflect is the structure of four pixel regions.The agent structure of the present embodiment TFT-LCD array base palte comprises the substrate (not shown) setting gradually from the bottom to top, the first metal layer (not label), the second metal level (not label), transparent electrode layer (not label), be arranged on the gate insulator (not shown) between this first metal layer and the second metal level, be arranged on the passivation layer (not shown) between the second metal level and transparent electrode layer and be formed on passivation layer and transparent electrode layer between chromatograph (RGB layer) (not shown).As shown in Figure 1, on the first metal layer, be formed with grid line 2 and common electrode wire (not label); On the second metal level, be formed with data line 1, on transparent electrode layer, be formed with pixel electrode 3 and thin film transistor (TFT) (not shown).Grid line 1 and data line 1 have intersected to form pixel region mutually.Thin film transistor (TFT) and pixel electrode 3 are installed in this pixel region.Grid line 2 is opened or cut-off signals for providing to thin film transistor (TFT), and data line 1 is for providing data-signal to pixel electrode 3, and common electrode wire and pixel electrode 3 form memory capacitance.
Particularly, deposit the first metal layer on substrate, this first metal layer can adopt the single-layer metal layer of the metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper, the MULTILAYER COMPOSITE layer that also can adopt above-mentioned single-layer metal layer to form.Adopt mask plate to carry out composition to the first metal layer, on substrate, form the figure of grid line 2 and common electrode wire.On grid line 2, be provided with grid (not shown).Common electrode wire comprises the first electrode wires 4 and the second electrode wires (not label).The first electrode wires 4 is for being parallel to the one-piece construction of grid line 2, and the second electrode wires is perpendicular to the intermittent configuration of grid line 2 and between two adjacent grid lines 2.The second electrode wires and the projection of data line 1 on the second metal level are parallel to each other, and the first electrode wires 4 is crossing with the projection of data line 1 on the second metal level.The second electrode wires comprises the first sub-electrode line 5 and the second sub-electrode line 6 that are arranged in parallel.In each pixel region, common electrode wire is the H type structure being interconnected to constitute by the first electrode wires 4 and the first sub-electrode line 5, the second sub-electrode line 6.
On the surface of grid line 2, common electrode wire and substrate, form gate insulator, gate insulator is amorphous silicon film layer.
At surface deposition second metal level of gate insulator, adopt photoetching process in described the second metal level, to form data line 1, source electrode (not shown) and drain electrode (not shown), described data line 1 is an one-piece construction with source electrode.In the present embodiment, data line 1 parallels with the projection of the second electrode wires on the second metal level, and data line 1 is crossing with the first projection of electrode wires 4 on the second metal level.
On described data line 1, source electrode, drain and gate surface of insulating layer, form passivation layer, described passivation layer is carried out to etching, form contact hole (not shown).Particularly, adopt chemical vapor deposition method to form passivation layer on described data line 1, common electrode wire and gate insulator surface, afterwards, adopt photoetching process to form contact hole in described passivation layer, described contact hole is positioned at the passivation layer of drain electrode top.
In described passivation layer surface, form chromatograph (RGB layer), RGB layer on passivation layer after film forming through exposure, develop, be arranged in pixel region.In the present embodiment, owing to having increased RGB layer between transparent electrode layer and the first metal layer, the thickness of this RGB layer to 5 μ m, has so just increased the distance between transparent electrode layer and the first metal layer at 3 μ m, thereby make the electric capacity that forms little between the two, then reduced RC delay.
On described RGB layer surface, form transparent electrode layer, described transparent electrode layer is carried out to etching, form pixel electrode 3, thin film transistor (TFT) (not shown).Concrete, adopt physical vapor deposition process to form transparent electrode layer on described RGB layer surface, described transparent electrode layer is transparent metal layer, making material is tin indium oxide (ITO).Afterwards, adopt photoetching process on transparent electrode layer, to form pixel electrode 3, described pixel electrode 3 is by contact hole and drain electrode electrical connection.
In the present embodiment, in transparent electrode layer, be also formed with connecting line 7.In same row pixel region, between every two adjacent pixel regions, connecting line 7 is set, this connecting line 7 is crossed on the grid line 2 between these two adjacent pixel regions.One end of connecting line 7 is connected with the second sub-electrode line 6 in this pixel region by the contact hole on the passivation layer in the pixel region of grid line 2 one sides, and the other end of connecting line 7 is connected with the second sub-electrode line 6 in this pixel region by the contact hole on the passivation layer in the pixel region of grid line 2 opposite sides.The the second sub-electrode line 6 that is positioned at grid line 2 both sides connects into entirety by connecting line 7, and the common electrode wire that is arranged in two pixel regions that same row pixel region is adjacent connects into the common electrode wire (Mesh Com) of grid type entirety by connecting line 7.This Mesh Com can make the common electrode wire that is positioned at grid line 2 both sides be communicated with, thereby the common electrode wire that is arranged in different pixels region on TFT-LCD array base palte is communicated with completely.Make because connecting line 7 adopts tin indium oxide (ITO), it is transparent material, has so just increased the transmittance of this TFT-LCD array base palte, nor can cause light leak.In addition, on the first metal layer, common electrode wire is H type structure, by also planting the structural design of transparent electrode layer of structure and top thereof, the transmittance of this TFT-LCD array base palte is increased.
Fig. 2 is the schematic diagram of TFT-LCD array base palte repair data line broken string of the present invention.As shown in Figure 3, find out the position that the first breakpoint 41 appears in data line 1.First by method for laser welding by the second adjacent with its right side the data line 1 of data line 1 first breakpoint 41 upsides sub-electrode line 6 weldings, and form the first fusion point 51 between this second sub-electrode line 6 and data line 1; Again by the second adjacent with its right side the data line of the first breakpoint 41 downsides 1 sub-electrode line 6 weldings, and form the second fusion point 52 between this second sub-electrode line 6 and data line 1.Adopt again cutting method by with the pixel region of the first fusion point 51, the second fusion point 52 adjacent both sides in the first electrode wires 4 cut off, form respectively cut-off point 31,32, thereby make the first breakpoint 41 common electrode wire of place pixel region and the common electrode wire of adjacent pixel regions isolated, guarantee the transmission of grid line signal.Adopt this repair mode, by the second sub-electrode line 6, described data line 1 is reconnected.In the present embodiment, the second sub-electrode line 6 finger one strip electrode lines or two the second sub-electrode lines 6 for being communicated with by connecting line 7.
Fig. 3 is the second embodiment schematic diagram of TFT-LCD array base palte repair data broken string of the present invention.As shown in Figure 3, find out the position that the second breakpoint 15 appears in data line 1.First by method for laser welding by the data line of the second breakpoint 15 upsides 1 with its first electrode wires 4 weldings of handing at the second metal level upslide shade, form the 3rd fusion point 21 at the intersection point place of both projections; First electrode wires 4 weldings of again data line of the second breakpoint 15 downsides 1 being handed at the second metal level upslide shade with another and its, form the 4th fusion point 22 at the intersection point place of both projections.Adopt laser cutting method by with the pixel region of the 3rd fusion point 21 adjacent both sides in the first electrode wires 4 interrupt, form cut-off point 11,12, the first electrode wires 4 in the 4th adjacent both sides of fusion point 22 pixel region is interrupted simultaneously, form cut-off point 13,14; Thereby make the second breakpoint 15 common electrode wire of place pixel region and the common electrode wire of other pixel regions isolated, guarantee the transmission of grid line signal.Adopt this repair mode, by the first electrode wires 4 in the second sub-electrode line 6, connecting line 7 and another adjacent pixel regions in the first electrode wires 4 and this pixel region in a pixel region and the second sub-electrode line 6 in this region, data line 1 is reconnected.The second sub-electrode line 6 in these two pixel regions is communicated with by connecting line 7.
In sum, the present invention is by the on line using the common electrode wire in pixel region as repair data line breakpoint, by the data line welding of itself and data line breakpoint both sides, disconnect being connected of common electrode wire of common electrode wire in the pixel region of breakpoint place and adjacent pixel regions simultaneously, thereby realized the reparation of data line breakpoint.This reparation has overcome the poor problem of section on traditional restorative procedure, has improved reparation success ratio.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improvement and conversion all should belong to the protection domain of claims of the present invention.
Claims (10)
1. a TFT-LCD array base palte, comprise the first metal layer setting gradually from bottom to top, the second metal level and transparent electrode layer, in described the first metal layer, be formed with grid line and common electrode wire, in described the second metal level, be formed with data line, in described transparent electrode layer, be formed with pixel electrode, described grid line and data line intersect to form pixel region, described pixel electrode and described common electrode wire are installed in described pixel region, it is characterized in that, described common electrode wire comprises interconnective the first electrode wires and the second electrode wires, the projection on described the second metal level of described the second electrode wires and described data line is parallel to each other, described the first electrode wires is crossing with the projection of described data line on described the second metal level.
2. TFT-LCD array base palte according to claim 1, is characterized in that, described the first electrode wires is the one-piece construction that is parallel to described grid line, and described the second electrode wires is the intermittent configuration perpendicular to described grid line.
3. TFT-LCD array base palte according to claim 2, it is characterized in that, described the second electrode wires comprises the first sub-electrode line and the second sub-electrode line that are arranged in parallel, the described common electrode wire H type structure that described the first sub-electrode line, the second sub-electrode line and the first electrode wires are interconnected to constitute of serving as reasons.
4. TFT-LCD array base palte according to claim 3, it is characterized in that, described TFT-LED array base palte also comprises connecting line, described connecting line and described pixel electrode arrange with layer, described connecting line is crossed on described grid line, one end of described connecting line is connected with the second sub-electrode line of described grid line one side, and the other end of described connecting line is connected with the second sub-electrode line of described grid line opposite side.
5. TFT-LCD array base palte according to claim 4, is characterized in that, the described common electrode wire that lays respectively at every described grid line both sides is interconnected by described connecting line.
6. a broken data wire restorative procedure for TFT-LCD array base palte, is characterized in that, comprising:
S1, find out the position of the breakpoint of data line;
S2, employing method for laser welding couple together the data line of described breakpoint both sides by common electrode wire; Wherein, described common electrode wire comprises interconnective the first electrode wires and the second electrode wires, the projection on described the second metal level of described the second electrode wires and described data line is parallel to each other, and described the first electrode wires is crossing with the projection of described data line on described the second metal level; Adopt laser cutting method to disconnect being connected of common electrode wire in the pixel region of described breakpoint place and common electrode wire in adjacent pixel regions.
7. broken data wire restorative procedure according to claim 6, is characterized in that, described step S2 comprises:
S21, adopt method for laser welding by the described first electrode wires welding crossing with its projection on described the second metal level respectively of the data line of breakpoint both sides, at the intersection point place formation fusion point of the projection of described data line and described the first electrode wires;
S22, adopt laser cutting method that thereby the first electrode wires in the pixel region of the adjacent both sides of described fusion point is disconnected to being connected of common electrode wire in the pixel region of described breakpoint place and common electrode wire in adjacent pixel regions.
8. broken data wire restorative procedure according to claim 7, is characterized in that, described step S2 comprises:
The described data line of S23, disconnection by described the first electrode wires, be connected to described the first electrode wires and described in another between the first electrode wires and the second electrode wires of being communicated with and the first electrode wires connection described in another.
9. broken data wire restorative procedure according to claim 6, is characterized in that, described step S2 comprises:
S21, employing method for laser welding, by described the second electrode wires welding adjacent thereto respectively of the data line of breakpoint both sides, form fusion point between described data line and described the second electrode wires;
S22, adopt laser cutting method that thereby the first electrode wires in the pixel region of the adjacent both sides of described fusion point is disconnected to being connected of common electrode wire in the pixel region of described breakpoint place and common electrode wire in adjacent pixel regions.
10. broken data wire restorative procedure according to claim 9, is characterized in that, described step S2 also comprises:
The described data line of S23, disconnection is communicated with by described the second electrode wires.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310747068.1A CN103885262B (en) | 2013-12-30 | 2013-12-30 | TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof |
| PCT/CN2014/070367 WO2015100770A1 (en) | 2013-12-30 | 2014-01-09 | Tft-lcd array substrate and method for repairing broken line of data line thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310747068.1A CN103885262B (en) | 2013-12-30 | 2013-12-30 | TFT-LCD (thin film transistor-liquid crystal display) array substrate and data line disconnection restoring method thereof |
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| CN103885262A true CN103885262A (en) | 2014-06-25 |
| CN103885262B CN103885262B (en) | 2017-02-22 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104298035A (en) * | 2014-09-23 | 2015-01-21 | 京东方科技集团股份有限公司 | Array substrate, method for repairing broken data line of array substrate and display device |
| CN104698707A (en) * | 2015-04-01 | 2015-06-10 | 上海天马微电子有限公司 | Array substrate and manufacturing method thereof and display device |
| CN104932161A (en) * | 2015-06-30 | 2015-09-23 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and restoration method thereof, and display device |
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| CN104698707A (en) * | 2015-04-01 | 2015-06-10 | 上海天马微电子有限公司 | Array substrate and manufacturing method thereof and display device |
| US9735184B2 (en) | 2015-04-01 | 2017-08-15 | Shanghai Tianma Micro-electronics Co., Ltd. | Forming method for structure of crossing datalines and scanning lines in display device |
| CN104932161A (en) * | 2015-06-30 | 2015-09-23 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and restoration method thereof, and display device |
| CN105870099B (en) * | 2016-02-05 | 2018-05-08 | 友达光电股份有限公司 | Self-luminous display and its repairing method |
| CN105870099A (en) * | 2016-02-05 | 2016-08-17 | 友达光电股份有限公司 | Self-luminous display and its repairing method |
| CN105549281A (en) * | 2016-03-16 | 2016-05-04 | 京东方科技集团股份有限公司 | Array substrate, repairing method, display panel and display device |
| CN105970210A (en) * | 2016-05-26 | 2016-09-28 | 京东方科技集团股份有限公司 | Broken line repairing device and method for array substrate |
| CN106353942A (en) * | 2016-10-10 | 2017-01-25 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel and restoration method thereof |
| CN106292037A (en) * | 2016-10-10 | 2017-01-04 | 南京中电熊猫液晶显示科技有限公司 | Blue phase liquid crystal array base palte |
| CN106292037B (en) * | 2016-10-10 | 2019-06-14 | 南京中电熊猫液晶显示科技有限公司 | Blue phase liquid crystal array substrate |
| CN106597699A (en) * | 2016-11-25 | 2017-04-26 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel and method of manufacturing and restoring the same |
| WO2020140618A1 (en) * | 2019-01-03 | 2020-07-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method and repair method therefor, and display device. |
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| CN110376809A (en) * | 2019-06-11 | 2019-10-25 | 惠科股份有限公司 | Broken string repairs structure, display panel and broken wire repair method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103885262B (en) | 2017-02-22 |
| WO2015100770A1 (en) | 2015-07-09 |
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