CN103875057A - 质谱仪 - Google Patents

质谱仪 Download PDF

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Publication number
CN103875057A
CN103875057A CN201280049341.7A CN201280049341A CN103875057A CN 103875057 A CN103875057 A CN 103875057A CN 201280049341 A CN201280049341 A CN 201280049341A CN 103875057 A CN103875057 A CN 103875057A
Authority
CN
China
Prior art keywords
electrode
secondary ion
primary ions
optical system
mass spectrometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280049341.7A
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English (en)
Chinese (zh)
Inventor
岩崎光太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN103875057A publication Critical patent/CN103875057A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/06Electron- or ion-optical arrangements
    • H01J49/061Ion deflecting means, e.g. ion gates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/0004Imaging particle spectrometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/0027Methods for using particle spectrometers
    • H01J49/0031Step by step routines describing the use of the apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/10Ion sources; Ion guns
    • H01J49/14Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/26Mass spectrometers or separator tubes
    • H01J49/34Dynamic spectrometers
    • H01J49/40Time-of-flight spectrometers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • G01N23/2258Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)
CN201280049341.7A 2011-10-13 2012-10-10 质谱仪 Pending CN103875057A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011225509 2011-10-13
JP2011-225509 2011-10-13
JP2012-223084 2012-10-05
JP2012223084A JP2013101918A (ja) 2011-10-13 2012-10-05 質量分析装置
PCT/JP2012/076743 WO2013054937A1 (en) 2011-10-13 2012-10-10 Mass spectrometer

Publications (1)

Publication Number Publication Date
CN103875057A true CN103875057A (zh) 2014-06-18

Family

ID=48081981

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280049341.7A Pending CN103875057A (zh) 2011-10-13 2012-10-10 质谱仪

Country Status (6)

Country Link
US (1) US8957392B2 (https=)
EP (1) EP2766917A4 (https=)
JP (1) JP2013101918A (https=)
KR (1) KR20140086992A (https=)
CN (1) CN103875057A (https=)
WO (1) WO2013054937A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106847659A (zh) * 2016-01-20 2017-06-13 加坦公司 使用直接检测传感器的电子能量损失光谱仪
CN109690307A (zh) * 2016-08-26 2019-04-26 株式会社岛津制作所 成像质谱分析数据处理装置
CN109923408A (zh) * 2016-11-18 2019-06-21 株式会社岛津制作所 离子分析装置
CN112309822A (zh) * 2020-09-29 2021-02-02 中国科学院地质与地球物理研究所 离子探针质谱仪及其成像方法
CN114944323A (zh) * 2022-06-29 2022-08-26 广州禾信仪器股份有限公司 离子偏转装置与质谱仪
CN120954963A (zh) * 2025-10-17 2025-11-14 中国地质科学院地质研究所 一种质谱成像装置和方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5885474B2 (ja) 2011-11-17 2016-03-15 キヤノン株式会社 質量分布分析方法及び質量分布分析装置
US8963081B2 (en) 2013-03-06 2015-02-24 Canon Kabushiki Kaisha Mass selector, and ion gun, ion irradiation apparatus and mass microscope
JP6624790B2 (ja) * 2014-03-03 2019-12-25 キヤノン株式会社 投影型の荷電粒子光学系、およびイメージング質量分析装置
KR101634231B1 (ko) * 2014-10-29 2016-06-29 한국표준과학연구원 입자빔 질량분석기 및 이를 이용한 입자 측정 방법
US10381210B2 (en) 2015-05-26 2019-08-13 Perkinelmer Health Sciences Canada, Inc. Double bend ion guides and devices using them
EP4437580A4 (en) * 2021-11-22 2026-01-28 Perkinelmer U S Llc DEFLECTORS FOR IONIC BEAMS AND MASS SPECTROMETRY SYSTEMS INCLUDING THEM

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4889987A (en) * 1986-06-04 1989-12-26 Arch Development Corporation Photo ion spectrometer
US5689112A (en) * 1996-04-12 1997-11-18 Enge; Harald A. Apparatus for detection of surface contaminations on silicon wafers
US6002128A (en) * 1995-07-04 1999-12-14 Ionoptika, Ltd. Sample analyzer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0378951A (ja) * 1989-08-21 1991-04-04 Jeol Ltd 写像型イオンマイクロアナライザ
JP2624854B2 (ja) * 1989-10-23 1997-06-25 株式会社日立製作所 2次イオン質量分析装置
JP2926666B2 (ja) * 1991-05-13 1999-07-28 株式会社島津製作所 直衝突イオン散乱分光装置
JPH05129000A (ja) * 1991-11-07 1993-05-25 Sumitomo Metal Mining Co Ltd 直衝突イオン散乱分光用イオン銃
JP2919229B2 (ja) * 1993-07-07 1999-07-12 日本電気株式会社 集束イオンビーム加工方法
JPH08153484A (ja) * 1994-11-30 1996-06-11 Hitachi Ltd イオン散乱表面分析装置
JP2001141673A (ja) 1999-11-16 2001-05-25 Canon Inc 時間分解型表面分析装置
GB0021902D0 (en) 2000-09-06 2000-10-25 Kratos Analytical Ltd Ion optics system for TOF mass spectrometer
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
JP5885474B2 (ja) 2011-11-17 2016-03-15 キヤノン株式会社 質量分布分析方法及び質量分布分析装置
JP2013239430A (ja) * 2012-04-16 2013-11-28 Canon Inc 飛行時間型質量分析装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4889987A (en) * 1986-06-04 1989-12-26 Arch Development Corporation Photo ion spectrometer
US6002128A (en) * 1995-07-04 1999-12-14 Ionoptika, Ltd. Sample analyzer
US5689112A (en) * 1996-04-12 1997-11-18 Enge; Harald A. Apparatus for detection of surface contaminations on silicon wafers

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106847659A (zh) * 2016-01-20 2017-06-13 加坦公司 使用直接检测传感器的电子能量损失光谱仪
CN106847659B (zh) * 2016-01-20 2019-10-11 加坦公司 使用直接检测传感器的电子能量损失光谱仪
CN109690307A (zh) * 2016-08-26 2019-04-26 株式会社岛津制作所 成像质谱分析数据处理装置
CN109923408A (zh) * 2016-11-18 2019-06-21 株式会社岛津制作所 离子分析装置
US10971349B2 (en) 2016-11-18 2021-04-06 Shimadzu Corporation Ion analyzer
CN112309822A (zh) * 2020-09-29 2021-02-02 中国科学院地质与地球物理研究所 离子探针质谱仪及其成像方法
CN114944323A (zh) * 2022-06-29 2022-08-26 广州禾信仪器股份有限公司 离子偏转装置与质谱仪
CN120954963A (zh) * 2025-10-17 2025-11-14 中国地质科学院地质研究所 一种质谱成像装置和方法
CN120954963B (zh) * 2025-10-17 2026-01-23 中国地质科学院地质研究所 一种质谱成像装置和方法

Also Published As

Publication number Publication date
JP2013101918A (ja) 2013-05-23
EP2766917A4 (en) 2015-07-22
EP2766917A1 (en) 2014-08-20
US8957392B2 (en) 2015-02-17
KR20140086992A (ko) 2014-07-08
WO2013054937A1 (en) 2013-04-18
US20140239173A1 (en) 2014-08-28

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Application publication date: 20140618