CN103871893A - 具有超陡逆行阱的体鳍片fet及其制造方法 - Google Patents
具有超陡逆行阱的体鳍片fet及其制造方法 Download PDFInfo
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- CN103871893A CN103871893A CN201310613247.6A CN201310613247A CN103871893A CN 103871893 A CN103871893 A CN 103871893A CN 201310613247 A CN201310613247 A CN 201310613247A CN 103871893 A CN103871893 A CN 103871893A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/708,531 | 2012-12-07 | ||
US13/708,531 US8815684B2 (en) | 2012-12-07 | 2012-12-07 | Bulk finFET with super steep retrograde well |
Publications (2)
Publication Number | Publication Date |
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CN103871893A true CN103871893A (zh) | 2014-06-18 |
CN103871893B CN103871893B (zh) | 2017-04-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310613247.6A Expired - Fee Related CN103871893B (zh) | 2012-12-07 | 2013-11-27 | 具有超陡逆行阱的体鳍片fet及其制造方法 |
Country Status (2)
Country | Link |
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US (2) | US8815684B2 (zh) |
CN (1) | CN103871893B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111244175A (zh) * | 2018-11-29 | 2020-06-05 | 台湾积体电路制造股份有限公司 | 电路器件及其形成方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US8963259B2 (en) * | 2013-05-31 | 2015-02-24 | Globalfoundries Inc. | Device isolation in finFET CMOS |
US9559191B2 (en) | 2014-04-16 | 2017-01-31 | International Business Machines Corporation | Punch through stopper in bulk finFET device |
US9478642B2 (en) | 2014-11-10 | 2016-10-25 | Globalfoundries Inc. | Semiconductor junction formation |
US9287264B1 (en) | 2014-12-05 | 2016-03-15 | Globalfoundries Inc. | Epitaxially grown silicon germanium channel FinFET with silicon underlayer |
US9536882B2 (en) | 2014-12-18 | 2017-01-03 | Globalfoundries Inc. | Field-isolated bulk FinFET |
US9455204B1 (en) * | 2015-06-01 | 2016-09-27 | Globalfoundries Inc. | 10 nm alternative N/P doped fin for SSRW scheme |
WO2017052604A1 (en) | 2015-09-25 | 2017-03-30 | Intel Corporation | Backside fin recess control with multi-hsi option |
KR102323943B1 (ko) | 2015-10-21 | 2021-11-08 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
US9871041B1 (en) | 2016-06-30 | 2018-01-16 | International Business Machines Corporation | Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors |
EP3504738A4 (en) | 2016-08-26 | 2020-09-02 | INTEL Corporation | INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED MANUFACTURING TECHNIQUES |
KR102575366B1 (ko) | 2016-11-09 | 2023-09-05 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9875936B1 (en) * | 2016-11-10 | 2018-01-23 | Globalfoundries Inc. | Spacer defined fin growth and differential fin width |
US10438855B2 (en) | 2017-02-17 | 2019-10-08 | International Business Machines Corporation | Dual channel FinFETs having uniform fin heights |
US11690209B2 (en) | 2019-09-28 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin-based well straps for improving memory macro performance |
CN112582420B (zh) * | 2019-09-28 | 2024-05-31 | 台湾积体电路制造股份有限公司 | 集成电路器件和形成半导体器件的方法 |
Citations (3)
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US20080001227A1 (en) * | 2006-06-29 | 2008-01-03 | International Business Machines Corporation | Structure and method for manufacturing double gate finfet with asymmetric halo |
CN101388344A (zh) * | 2007-09-11 | 2009-03-18 | 硅绝缘体技术有限公司 | 多栅极场效应晶体管结构及其制造方法 |
CN102117828A (zh) * | 2009-12-30 | 2011-07-06 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
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US7064399B2 (en) * | 2000-09-15 | 2006-06-20 | Texas Instruments Incorporated | Advanced CMOS using super steep retrograde wells |
US7009250B1 (en) | 2004-08-20 | 2006-03-07 | Micron Technology, Inc. | FinFET device with reduced DIBL |
US7323389B2 (en) * | 2005-07-27 | 2008-01-29 | Freescale Semiconductor, Inc. | Method of forming a FINFET structure |
US8329564B2 (en) | 2007-10-26 | 2012-12-11 | International Business Machines Corporation | Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method |
US8236661B2 (en) | 2009-09-28 | 2012-08-07 | International Business Machines Corporation | Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage |
CN102263131B (zh) | 2010-05-25 | 2013-05-01 | 中国科学院微电子研究所 | 一种半导体器件及其形成方法 |
US8759872B2 (en) * | 2010-06-22 | 2014-06-24 | Suvolta, Inc. | Transistor with threshold voltage set notch and method of fabrication thereof |
US8466473B2 (en) * | 2010-12-06 | 2013-06-18 | International Business Machines Corporation | Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs |
-
2012
- 2012-12-07 US US13/708,531 patent/US8815684B2/en active Active
-
2013
- 2013-08-16 US US13/968,570 patent/US8809872B2/en active Active
- 2013-11-27 CN CN201310613247.6A patent/CN103871893B/zh not_active Expired - Fee Related
Patent Citations (3)
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US20080001227A1 (en) * | 2006-06-29 | 2008-01-03 | International Business Machines Corporation | Structure and method for manufacturing double gate finfet with asymmetric halo |
CN101388344A (zh) * | 2007-09-11 | 2009-03-18 | 硅绝缘体技术有限公司 | 多栅极场效应晶体管结构及其制造方法 |
CN102117828A (zh) * | 2009-12-30 | 2011-07-06 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
Non-Patent Citations (1)
Title |
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HUMING BU, ET AL.: ""FINFET Technology A Substrate Perspective"", 《SOI CONFERENCE,2011 IEEE INTERNATIONAL》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111244175A (zh) * | 2018-11-29 | 2020-06-05 | 台湾积体电路制造股份有限公司 | 电路器件及其形成方法 |
CN111244175B (zh) * | 2018-11-29 | 2024-01-30 | 台湾积体电路制造股份有限公司 | 电路器件及其形成方法 |
Also Published As
Publication number | Publication date |
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CN103871893B (zh) | 2017-04-12 |
US8809872B2 (en) | 2014-08-19 |
US20140159162A1 (en) | 2014-06-12 |
US8815684B2 (en) | 2014-08-26 |
US20140159163A1 (en) | 2014-06-12 |
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