CN103866394B - 一种等离子体浸没离子注入系统 - Google Patents
一种等离子体浸没离子注入系统 Download PDFInfo
- Publication number
- CN103866394B CN103866394B CN201210533994.4A CN201210533994A CN103866394B CN 103866394 B CN103866394 B CN 103866394B CN 201210533994 A CN201210533994 A CN 201210533994A CN 103866394 B CN103866394 B CN 103866394B
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- CN
- China
- Prior art keywords
- gas
- ion implantation
- implantation system
- plasma immersion
- indium
- Prior art date
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- 238000007654 immersion Methods 0.000 title claims abstract description 37
- 238000005468 ion implantation Methods 0.000 title claims abstract description 33
- 238000002347 injection Methods 0.000 claims abstract description 55
- 239000007924 injection Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims description 72
- 150000002500 ions Chemical class 0.000 claims description 51
- 229910052738 indium Inorganic materials 0.000 claims description 46
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 18
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 17
- 230000007246 mechanism Effects 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 10
- 150000002739 metals Chemical class 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 150000004706 metal oxides Chemical class 0.000 abstract description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 208000036626 Mental retardation Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210533994.4A CN103866394B (zh) | 2012-12-11 | 2012-12-11 | 一种等离子体浸没离子注入系统 |
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CN201210533994.4A CN103866394B (zh) | 2012-12-11 | 2012-12-11 | 一种等离子体浸没离子注入系统 |
Publications (2)
Publication Number | Publication Date |
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CN103866394A CN103866394A (zh) | 2014-06-18 |
CN103866394B true CN103866394B (zh) | 2016-08-17 |
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CN201210533994.4A Active CN103866394B (zh) | 2012-12-11 | 2012-12-11 | 一种等离子体浸没离子注入系统 |
Country Status (1)
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CN (1) | CN103866394B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003303569A (ja) * | 2002-04-09 | 2003-10-24 | Sony Corp | イオン注入装置及びイオン注入方法 |
CN102021524A (zh) * | 2009-09-23 | 2011-04-20 | 中国科学院微电子研究所 | 在等离子体浸没离子注入中对不同质量离子分离的装置 |
CN102296276A (zh) * | 2010-06-25 | 2011-12-28 | 中国科学院微电子研究所 | 等离子体浸没离子注入设备 |
CN102543643A (zh) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | 一种用于离子源的固体物质气化装置 |
CN102808162A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 铟离子产生装置和方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050230047A1 (en) * | 2000-08-11 | 2005-10-20 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus |
-
2012
- 2012-12-11 CN CN201210533994.4A patent/CN103866394B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003303569A (ja) * | 2002-04-09 | 2003-10-24 | Sony Corp | イオン注入装置及びイオン注入方法 |
CN102021524A (zh) * | 2009-09-23 | 2011-04-20 | 中国科学院微电子研究所 | 在等离子体浸没离子注入中对不同质量离子分离的装置 |
CN102296276A (zh) * | 2010-06-25 | 2011-12-28 | 中国科学院微电子研究所 | 等离子体浸没离子注入设备 |
CN102543643A (zh) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | 一种用于离子源的固体物质气化装置 |
CN102808162A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 铟离子产生装置和方法 |
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Publication number | Publication date |
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CN103866394A (zh) | 2014-06-18 |
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Effective date of registration: 20190529 Address after: Room 820, 8th Floor, Building 1, 13 Guocheng Road, Shunqing District, Nanchong City, Sichuan Province Patentee after: Zhongke Jiuwei Technology Co.,Ltd. Address before: 100029 Microelectronics Institute, Chinese Academy of Sciences, 3 north earth road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20210922 Address after: 226001 south side of Zhongxiu road and west side of Shuangfu Road, high tech Zone, Nantong City, Jiangsu Province Patentee after: Jiangsu Zhongke Jiuwei Technology Co.,Ltd. Address before: Room 820, 8th Floor, Building 1, 13 Guocheng Road, Shunqing District, Nanchong City, Sichuan Province Patentee before: Zhongke Jiuwei Technology Co.,Ltd. |
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