CN103855277B - Led packaging method - Google Patents
Led packaging method Download PDFInfo
- Publication number
- CN103855277B CN103855277B CN201410038275.4A CN201410038275A CN103855277B CN 103855277 B CN103855277 B CN 103855277B CN 201410038275 A CN201410038275 A CN 201410038275A CN 103855277 B CN103855277 B CN 103855277B
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- Prior art keywords
- led
- piece
- metal etch
- etching groove
- etching
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 title abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 51
- 239000002390 adhesive tape Substances 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims description 44
- 239000013078 crystal Substances 0.000 claims description 26
- 238000005538 encapsulation Methods 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 4
- 230000007704 transition Effects 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 238000001746 injection moulding Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 239000004568 cement Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention is applied to the field of LED packaging technologies and provides an LED packaging method. The LED packaging method includes the steps of etching a plurality of etching grooves parallel to one another in a metal etching piece, welding the positive electrode and the negative electrode of an LED flip-chip wafer onto the two sides of the upper portion of each etching groove, coating fluorescence gel on the metal etching piece and enabling the fluorescence gel to be solidified, wherein the LED flip-chip wafer is covered with the fluorescence gel, bonding adhesive tape to the lower surface of the metal etching piece, forming transparent packaging gel on the metal etching piece, where the fluorescence gel is covered with the transparent packaging gel, filling the transparent packaging gel into the etching grooves, enabling the transparent packaging gel to be solidified, and finally removing edges of the metal etching piece and the adhesive tape and cutting out LEDs. According to the LEDs packaged in the method, the metal etching piece serving as the positive electrodes and the negative electrodes of the LEDs exist between the wafer electrodes to welding electrodes of application ends and play a role of transition, so the use difficulty of the LEDs at the application ends can not be increased, and the use of the LEDs is completely the same as the use of a support formed through injection molding.
Description
Technical field
The invention belongs to LED encapsulation technologies field, more particularly to a kind of LED encapsulation method.
Background technology
The packaged type of white light LEDs product is to be fixed on LED wafer by way of crystal-bonding adhesive bonding or eutectic welding
On support, the positive pole of chip is connected to using gold thread for the positive pole of support, the negative pole of chip is connected to the negative pole of support, refills
Meet the fluorescent material of target zone.Due to support, the thermal coefficient of expansion difference of chip colloid, in support, crystal-bonding adhesive, gold thread, glue
Easily there is integrity problem in the aspects such as body, and LED support species is various, and the material of bonding support both positive and negative polarity is PPA, P
CT, EMC material, in heat-resisting quantity, air-tightness has larger defect, and affects LED product reliability；Ceramics bracket
With preferable heat-resisting quantity and preferable air-tightness, but the close chip cost of support cost, and ceramics bracket encapsulation LED
System takes costliness, and equipment investment is big, and production capacity is little.In a word, the LED illumination product of support encapsulated structure is in reliability, using the longevity
Life, product price aspect is the larger obstruction of LED illumination products substitution traditional lighting.
The content of the invention
The purpose of the embodiment of the present invention is to provide a kind of LED encapsulation method, it is intended to solve the made LED of existing method for packing
The low problem of reliability.
The embodiment of the present invention is achieved in that a kind of LED encapsulation method, comprises the following steps：
A plurality of parallel etching groove is etched on metal etch piece, the etching groove runs through metal etch piece, its underpart width
Degree is more than upper width, and the edge of the metal etch piece is intact；
The positive and negative electrode of LED overlay crystal chips is respectively welded in the both sides on the etching groove top；
The coating on the metal etch piece covers the fluorescent glue of LED overlay crystal chips and is allowed to solidify；
It is sticked adhesive tape in the metal etch piece lower surface；
The molding on the metal etch piece covers the transparent enclosure glue of the fluorescent glue, and the transparent enclosure glue is by adhesive tape
Stop, be allowed to be filled in the etching groove, and transparent enclosure glue described in solidify afterwards；
The metal etch piece edge and adhesive tape are removed, each LED, the metal etch piece point of the etching groove both sides is cut out
Not Yong Zuo LED positive and negative electrode.
The embodiment of the present invention is then brilliant by LED flips prior to etching a plurality of etching groove being parallel to each other on metal etch piece
The positive and negative electrode of piece is respectively welded in the both sides on the etching groove top, on the metal etch piece coating cover LED
The fluorescent glue of overlay crystal chip simultaneously is allowed to solidify, and is sticked adhesive tape then at the metal etch piece lower surface, then loses in the metal
The transparent enclosure glue that molding on piece covers the fluorescent glue is carved, the transparent enclosure glue is filled in etching groove, then makes described
Bright encapsulation adhesive curing, finally removes the metal etch piece edge and adhesive tape, cuts out each LED, wherein the etching groove both sides
Metal etch piece be used separately as the positive and negative electrode of LED.So LED of encapsulation, the welding electricity of its chip electrode to application end
The metal etch piece transition of LED positive and negative electrodes is existed that serve as between pole so that this LED product will not increase in the use of application end
Difficulty, is fully equivalent to the support occupation mode of injection mo(u)lding.Again because this LED do not have the plastic cement needed for conventional LED packages or
Ceramics bracket, and there is high reliability.Additionally, this LED packaging costs are extremely low.
Description of the drawings
Fig. 1 is the flowchart of LED encapsulation method provided in an embodiment of the present invention；
Fig. 2 is the structural representation that metal etch piece etches etching groove；
Fig. 3 is the structural representation of LED overlay crystal chips；
Fig. 4 is the structural representation that the electrode eutectic of LED overlay crystal chips is welded in etching groove top both sides；
Fig. 5 is the top view of Fig. 4；
Fig. 6 is in the structural representation of LED overlay crystal chips surface-coated fluorescent glue shown in Fig. 4,5；
Fig. 7 is the top view of Fig. 6；
Fig. 8 be in fixed LED overlay crystal chips region perimeter etch to the groove of specification fluorescent glue structural representation；
Fig. 9 is in the structural representation of the surface-coated fluorescent glues of LED overlay crystal chips shown in Fig. 8；
Figure 10 is the structural representation of adhesive tape of being sticked in the lower surface of metal etch piece shown in Fig. 6；
Figure 11 is the structural representation that transparent enclosure glue is laid on metal etch piece shown in Figure 10；
Figure 12 is the top view of Figure 11；
Figure 13 is after transparent enclosure adhesive curing, to have torn the structural representation of adhesive tape off；
Figure 14 is to structural representation when semi-finished product cut shown in Figure 13；
Figure 15 cuts out the structural representation of each LED；
Figure 16 is the top view of Figure 15.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, and
It is not used in the restriction present invention.
The embodiment of the present invention is then brilliant by LED flips prior to etching a plurality of etching groove being parallel to each other on metal etch piece
The positive and negative electrode of piece is respectively welded in the both sides on the etching groove top, on the metal etch piece coating cover LED
The fluorescent glue of overlay crystal chip simultaneously is allowed to solidify, and is sticked adhesive tape then at the metal etch piece lower surface, then loses in the metal
The transparent enclosure glue that molding on piece covers the fluorescent glue is carved, the transparent enclosure glue is filled in etching groove, then makes described
Bright encapsulation adhesive curing, finally removes the metal etch piece edge and adhesive tape, cuts out each LED, wherein the etching groove both sides
Metal etch piece be used separately as the positive and negative electrode of LED.So LED of encapsulation, the welding electricity of its chip electrode to application end
The metal etch piece transition of LED positive and negative electrodes is existed that serve as between pole so that this LED product will not increase in the use of application end
Difficulty, is fully equivalent to the support occupation mode of injection mo(u)lding.Again because this LED do not have the plastic cement needed for conventional LED packages or
Ceramics bracket, and there is high reliability.Additionally, this LED packaging costs are extremely low.
What Fig. 1 showed LED encapsulation method provided in an embodiment of the present invention realizes flow process, and details are as follows.
In step S101, a plurality of parallel etching groove is etched on metal etch piece, the etching groove is lost through metal
Piece is carved, its underpart width is more than upper width, and the edge of the metal etch piece is intact.
The embodiment of the present invention etches a plurality of etching groove being parallel to each other on metal etch piece 1, and the etching groove is through gold
Category etch slide 1, the width of its underpart 9 is more than the width of top 2, and the edge 10 of the metal etch piece is intact.Preferably, the erosion
The width on cutting top 2 is equal to the beeline between the positive and negative electrode of LED overlay crystal chips 3, is easy to subsequent handling to weld the LED and covers
Jingjing piece 3, the depth on the etching groove top 2 is slightly larger than the beeline between the positive and negative electrode of LED overlay crystal chips 3, such as Fig. 2,3 institutes
Show.Wherein, the thickness of the metal etch piece 1 is preferably 0.05～0.5mm.Because made LED product size is decided by etch slide
Positive and negative electrode size, so can be easily made with the equal size of conventional LED packages product etching plate rack encapsulating products.
In step s 102, the positive and negative electrode of LED overlay crystal chips is respectively welded in the both sides on the etching groove top.
The embodiment of the present invention first obtains multiple LED overlay crystal chips 3, is then total to the positive and negative electrode of each LED overlay crystal chips 3
Crystalline substance is welded in the both sides on the etching groove top 2, as shown in Figure 4,5.It should be noted that the LED overlay crystal chips 3 is positive and negative
Electrode is respectively positioned on its bottom, and one of them is anelectrode, and another is negative electrode.
In step s 103, coating covers the fluorescent glue of LED overlay crystal chips and is allowed to solidify on the metal etch piece.
The embodiment of the present invention coats the fluorescent glue 4 of covering LED overlay crystal chips 3 on the metal etch piece 1 and is allowed to solid
Change, as shown in Fig. 6～9.Specifically, applicant can adopt it public in document number is for the patent application document of CN102544260A
The method in LED overlay crystal chip surface-coated fluorescent glues opened.If described in etching using fluorescent glue 4 described in groove specification
During etching groove 2, go out groove 6 in the region perimeter etch of the fixed LED overlay crystal chips 3, as shown in Figure 8,9.Wherein, it is described glimmering
The thickness of optical cement 4 is preferably 0.03～0.5mm.Because the fluorescent glue 4 has certain viscosity and surface tension, it will not be along described
Etching groove 2 down or outbound flows.
In step S104, it is sticked adhesive tape in the metal etch piece lower surface.
The embodiment of the present invention is the bottom metal layers of protection metal etch piece 1, prevents the transparent silica gel of its bonding subsequent handling,
Pasting in the lower surface of metal etch piece 1 can high temperature resistant（150 DEG C, silica gel baking temperature）Adhesive tape 5, as shown in Figure 10.
In step S105, the molding on the metal etch piece covers the transparent enclosure glue of the fluorescent glue, described
Bright packaging plastic is stopped by adhesive tape, is allowed to be filled in the etching groove, and transparent enclosure glue described in solidify afterwards.
Embodiment of the present invention molding on the metal etch piece 1 covers the transparent enclosure glue of the fluorescent glue 4（It is such as transparent
Silica gel）7 and it is allowed to solidify, as shown in Figure 11,12.Wherein, the transparent enclosure glue 7 is also filled up in etching groove, and by the glue
Band 5 is stopped.To strengthen the hot spot uniformity of LED product, a certain proportion of silicon dioxide powder of doping in the transparent enclosure glue 7
End.Additionally, each LED8 upper surfaces are shaped to cambered surface by the transparent enclosure glue 7.Similarly, because the transparent enclosure glue 7 has
Certain viscosity and surface tension, it will not outbound flow along the etching groove top 2.
In step s 106, the metal etch piece edge and adhesive tape are removed, each LED, the etching groove both sides is cut out
Metal etch piece be used separately as the positive and negative electrode of LED.
As shown in Figure 13,14, the embodiment of the present invention first tears the adhesive tape 5 off, is then sliced out the metal etch piece edge
10, each LED8 positive and negative electrodes are kept completely separate, finally cut out each LED8 according to line of cut 11 shown in Figure 14.After cutting, the erosion
The metal etch piece of cutting both sides is used separately as the positive and negative electrode of LED8.
To sum up, LED encapsulation method provided in an embodiment of the present invention has the advantage that：
1st, LED overlay crystal chips bottom electrode eutectic is on metal etch piece, and packaging technology processing procedure is stable, convenient；
2nd, coating, molding fluorescent glue and transparent enclosure glue are carried out on metal etch piece, and utilization of materials is high, reduce encapsulation
Cost；
3rd, the LED for thus encapsulating is only by silica gel, metal electrode film, overlay crystal chip and is coated in the fluorescence of wafer surface
Glue, material is simple, stable, and correspondingly LED product is of good reliability.
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (7)
1. a kind of LED encapsulation method, it is characterised in that the method comprising the steps of：
A plurality of parallel etching groove is etched on metal etch piece, the etching groove runs through metal etch piece, and its underpart width is big
In upper width, the edge of the metal etch piece is intact；
The positive and negative electrode of LED overlay crystal chips is respectively welded in the both sides on the etching groove top；
The coating on the metal etch piece covers the fluorescent glue of LED overlay crystal chips and is allowed to solidify；
It is sticked adhesive tape in the metal etch piece lower surface；
The molding on the metal etch piece covers the transparent enclosure glue of the fluorescent glue, and the transparent enclosure glue is hindered by adhesive tape
Block, be allowed to be filled in the etching groove, and transparent enclosure glue described in solidify afterwards；
The metal etch piece edge and adhesive tape are removed, each LED is cut out, the metal etch piece of the etching groove both sides is used respectively
Make the positive and negative electrode of LED；
When the etching groove is etched, the depth on the etching groove top is more than the most short distance between LED overlay crystal chip positive and negative electrodes
From.
2. the method for claim 1, it is characterised in that when the etching groove is etched, in the fixed overlay crystal chip
Region perimeter etch to specification fluorescent glue groove.
3. method as claimed in claim 1 or 2, it is characterised in that the width on the etching groove top is equal to LED overlay crystal chips
Distance between positive and negative electrode.
4. method as claimed in claim 3, it is characterised in that the thickness of the metal etch piece is 50～500 μm.
5. method as claimed in claim 4, it is characterised in that the thickness of the fluorescent glue is 30～500 μm.
6. method as claimed in claim 1 or 2, it is characterised in that doped with SiO 2 powder in the transparent enclosure glue.
7. method as claimed in claim 6, it is characterised in that each LED upper surfaces are cambered surface by the transparent enclosure gum forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038275.4A CN103855277B (en) | 2014-01-26 | 2014-01-26 | Led packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038275.4A CN103855277B (en) | 2014-01-26 | 2014-01-26 | Led packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103855277A CN103855277A (en) | 2014-06-11 |
| CN103855277B true CN103855277B (en) | 2017-05-10 |
Family
ID=50862684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410038275.4A Active CN103855277B (en) | 2014-01-26 | 2014-01-26 | Led packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103855277B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142506A (en) * | 2010-01-29 | 2011-08-03 | 株式会社东芝 | LED package and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280562A (en) * | 2011-08-02 | 2011-12-14 | 日月光半导体制造股份有限公司 | Package process and structure of light-emitting diode |
| CN102916112B (en) * | 2012-10-31 | 2015-07-29 | 佛山市国星光电股份有限公司 | A kind of high power LED device and manufacture method thereof |
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- 2014-01-26 CN CN201410038275.4A patent/CN103855277B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142506A (en) * | 2010-01-29 | 2011-08-03 | 株式会社东芝 | LED package and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| CN103855277A (en) | 2014-06-11 |
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Effective date of registration: 20210119 Address after: 518000, 6th floor, building 1, Tianliao community, Gongming office, Guangming New District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Refond Optoelectronics Co.,Ltd. Address before: 201306 room 8650, building 1, 1758, Luchaogang Road, Luchaogang Town, Pudong New Area, Shanghai Patentee before: SHANGHAI RUIFENG OPTOELECTRONICS Co.,Ltd. |
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