CN103843249B - Crystal vibrating device - Google Patents
Crystal vibrating device Download PDFInfo
- Publication number
- CN103843249B CN103843249B CN201380003284.3A CN201380003284A CN103843249B CN 103843249 B CN103843249 B CN 103843249B CN 201380003284 A CN201380003284 A CN 201380003284A CN 103843249 B CN103843249 B CN 103843249B
- Authority
- CN
- China
- Prior art keywords
- electrode
- crystal
- crystal slab
- slab
- vibrating device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000013078 crystal Substances 0.000 title claims abstract description 121
- 239000010453 quartz Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000007423 decrease Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a kind of crystal vibrating device with low CI value.Crystal vibrating device (1) possesses quartz crystal (11).Quartz crystal (11) has crystal slab (12), the first electrode (13) and the second electrode (14).The plan view shape of crystal slab (12) is rectangle.Crystal slab (12) has from central authorities' shape thinning toward the outer side.First electrode (13) is configured on an interarea (12a) of crystal slab (12).Second electrode (14) is configured on another interarea (12b) of crystal slab (12).Second electrode (14) is opposed with the first electrode (13) across crystal slab (12).Quartz crystal (11) vibrates with thickness-shear vibration mode formula.The respective plan view shape of the first electrode (13) and the second electrode (14) is oval or circular.
Description
Technical field
The present invention relates to crystal vibrating device.
Background technology
In patent documentation 1 grade, propose the various crystal vibrating device possessing quartz crystal.In patent documentation 1, record the crystal vibrating device being configured with the electrode of substantially rectangular shape on the two sides of the crystal slab of inclined-plane (bevel) type, convex surface (convex) type.
Patent documentation 1: Japanese Unexamined Patent Publication 58-11313 publication
In crystal vibrating device, in order to improve the vibration efficiency of quartz crystal, reducing CI(CrystalImpedance: crystal impedance) value is effective.
Summary of the invention
Main purpose of the present invention is to provide the crystal vibrating device with low CI value.
Crystal vibrating device involved in the present invention possesses quartz crystal.Quartz crystal has crystal slab, the first electrode and the second electrode.The plan view shape of crystal slab is rectangle.Crystal slab has from central authorities' shape thinning toward the outer side.First electrode is configured on an interarea of crystal slab.Second electrode is configured on another interarea of crystal slab.Second electrode is across crystal slab and the first electrode contraposition.Quartz crystal vibrates with thickness-shear vibration mode formula.The respective plan view shape of the first electrode and the second electrode is oval or circular.
In certain specific form of crystal vibrating device involved in the present invention, the respective major diameter of the first electrode and the second electrode is parallel with the long limit of crystal slab.
In other specific form of crystal vibrating device involved in the present invention, when the thickness being provided with the crystal slab of the central authorities in the region of the first electrode and the second electrode of crystal slab is set to T
0, the thickness of the crystal slab of the end of the crystal slab being provided with the region of the first electrode and the second electrode long limit bearing of trend of crystal slab is set to T
1, the thickness being provided with the crystal slab of the end of the crystal slab minor face bearing of trend in the region of the first electrode and the second electrode of crystal slab is set to T
2time, meet 0.04T
0< T
0-T
1< 0.11T
0and 0.03T
0< T
0-T
2< 0.11T
0.
In other specific form of crystal vibrating device involved in the present invention, the thickness of crystal slab successively decreases toward the outer side from central authorities.
According to the present invention, a kind of crystal vibrating device with low CI value can be provided.
Accompanying drawing explanation
Fig. 1 is the schematically cutaway view of the crystal vibrating device involved by one embodiment of the present invention.
Fig. 2 is the schematically vertical view of the quartz crystal in one embodiment of the present invention.
Fig. 3 is the schematically cutaway view of the line III-III of Fig. 2.
Fig. 4 is the schematically cutaway view of the line IV-IV of Fig. 2.
Fig. 5 represents (T
0-T
1) and electromechanical coupling factor between the figure of relation.
Fig. 6 represents (T
0-T
2) and electromechanical coupling factor between the figure of relation.
Embodiment
Below, the example implementing preferred mode of the present invention is described.But following execution mode is only illustration.The present invention is not limited to following execution mode.
In addition, in each accompanying drawing of the middle references such as execution mode, the parts in fact with identical function utilize identical Reference numeral to carry out reference.In addition, in execution mode etc., the accompanying drawing of reference is the accompanying drawing schematically recorded, and deposits the situation that the ratio of the ratio of the size of object described in the accompanying drawings etc. and the size of the object of reality etc. is different.Even if at accompanying drawing each other, also there is the situation that dimension scale of object etc. is different.The dimension scale etc. of concrete object should judge with reference to the following description.
Crystal vibrating device 1 shown in Fig. 1 is the electronic installation be such as preferably used as crystal oscillation device etc.
Crystal vibrating device 1 possesses installation quartz crystal 11 on the substrate 10.Quartz crystal 11 vibrates with thickness-shear vibration mode formula.In crystal vibrating device 1, quartz crystal 11 is supported on substrate 10 with cantilever fashion., quartz crystal also can be supported on substrate in beam supported at both ends mode.
Quartz crystal 11 has crystal slab 12.As shown in Figure 2, the plan view shape of crystal slab 12 is rectangle.Herein, be located at " rectangle " and comprise square.Crystal slab 12 has from central authorities' shape thinning toward the outer side.The thickness of crystal slab 12 is maximum in central authorities, and successively decreases toward the outer side from central authorities.First interarea 12a and the second interarea 12b is arranged to from central authorities close to each other toward the outer side.First interarea 12a and the second interarea 12b of crystal slab 12 are made up of curved surface respectively.More specifically, the first interarea 12a and the second interarea 12b has the shape along ellipsoid respectively., the first interarea of crystal slab and the second interarea such as also can be made up of multiple plane.Crystal slab also can be such as plagiohedral, convex-surface type.
The interarea 12a of crystal slab 12 is configured with the first electrode 13.The interarea 12b of crystal slab 12 is configured with the second electrode 14.First electrode 13 is opposed on the thickness direction of crystal slab 12 across crystal slab 12 with the second electrode 14.First electrode 13 and the second electrode 14 can be such as made up of suitable electric conducting materials such as the metals such as aluminium, silver, copper, gold, more than one the alloys comprised in these metals respectively.
The respective plan view shape of the first electrode 13 and the second electrode 14 is oval or circular.In the present embodiment, specifically, the respective plan view shape of the first electrode 13 and the second electrode 14 is following ellipses: center during the overlooking of center when overlooking and crystal slab 12 is roughly consistent, and major diameter is parallel with the long limit of crystal slab 12.
Herein, be set to
T
0: the thickness being provided with the crystal slab 12 of the central authorities in the region of the first electrode 13 and the second electrode 14 of crystal slab 12,
T
1: the thickness being provided with the crystal slab 12 of the end of the crystal slab 12 long limit bearing of trend in the region of the first electrode 13 and the second electrode 14 of crystal slab 12,
T
2: the thickness being provided with the crystal slab 12 of the end of the crystal slab 12 minor face bearing of trend in the region of the first electrode 13 and the second electrode 14 of crystal slab 12.
In quartz crystal 11, the first electrode 13 and the second electrode 14 is set in the mode meeting following formula (1) and formula (2).
0.04T
0＜T
0-T
1＜0.11T
0·········（1）
0.03T
0＜T
0-T
2＜0.11T
0·········（2）
But, in crystal slab, upon application of a voltage, there is the part that the large part of displacement is little with displacement.Such as, the part that the displacement of crystal slab is little arranges electrode, even if be applied with voltage to this part, the contribution rate of the electric power be applied in vibration is also lower.In addition, because electric capacity increases, so electromechanical coupling factor reduces.Therefore, CI(CrystalImpedance: crystal impedance) value uprises.
Herein, when have from the crystal slab 12 of central authorities' shape thinning be not toward the outer side square but rectangular shape, the displacement at the center of crystal slab 12 becomes maximum.The isopleth of the displacement (deformation quantity) of crystal slab 12 becomes centered by crystal slab 12, the elliptical shape that major diameter is parallel with long limit.When to have from the crystal slab 12 of central authorities' shape thinning be toward the outer side square shape, the displacement at the center of crystal slab 12 becomes maximum.The isopleth of the displacement (deformation quantity) of crystal slab 12 becomes the circle centered by crystal slab 12.Therefore, as crystal vibrating device 1, ellipse or circle is set to from the first electrode 13 interarea 12a, 12b of the crystal slab 12 overlooking rectangular shape of central authorities' shape thinning toward the outer side and the second electrode 14 by being configured to have, electromechanical coupling factor can be improved thus, consequently, CI value can be reduced.
Fig. 5 represents (T
0-T
1) and electromechanical coupling factor between the figure of relation.Fig. 6 represents (T
0-T
2) and electromechanical coupling factor between the figure of relation.Wherein, the figure when data shown in Fig. 5 and Fig. 6 are following conditions.
Crystal slab 12:AT cutting crystal plate
The length on the long limit of crystal slab 12: 1.95
mm
The length of the minor face of crystal slab 12: 1.285mm
The thickness at the center of crystal slab 12: 0.229mm(8MHz)
By the center of crystal slab 12 and the radius of curvature of the interarea of the section parallel with long limit: 11mm
By the center of crystal slab 12 and the radius of curvature of the interarea of the section parallel with minor face: 4.785mm
Result according to Fig. 5, when meeting formula (1), can obtain the electromechanical coupling factor of more than 97% of the maximum of electromechanical coupling factor.
Result according to Fig. 6, when meeting formula (2), can obtain the electromechanical coupling factor of more than 97% of the maximum of electromechanical coupling factor.
As known from the above, by arranging the first electrode 13 and the second electrode 14 in the mode meeting formula (1) and formula (2), low CI value can be realized.
Description of reference numerals: 1 ... crystal vibrating device; 10 ... substrate; 11 ... quartz crystal; 12 ... crystal slab; 12a ... first interarea; 12b ... second interarea; 13 ... first electrode; 14 ... second electrode.
Claims (3)
1. a crystal vibrating device, wherein,
Possess with the quartz crystal of thickness-shear vibration mode formula vibration, this quartz crystal has:
Crystal slab, its plan view shape is rectangle, and has from central authorities' shape thinning toward the outer side;
First electrode, it is configured on an interarea of described crystal slab;
Second electrode, it is configured on another interarea of described crystal slab, and across described crystal slab and described first electrode contraposition,
The respective plan view shape of described first electrode and the second electrode is oval or circular,
When the thickness being provided with the described crystal slab of the central authorities in the region of described first electrode and the second electrode of described crystal slab is set to T
0,
The thickness being provided with the described crystal slab of the end of the described crystal slab long limit bearing of trend in the region of described first electrode and the second electrode of described crystal slab is set to T
1,
The thickness being provided with the described crystal slab of the end of the described crystal slab minor face bearing of trend in the region of described first electrode and the second electrode of described crystal slab is set to T
2time,
Meet 0.04T
0< T
0-T
1< 0.11T
0and
0.03T
0＜T
0-T
2＜0.11T
0。
2. crystal vibrating device according to claim 1, wherein,
The respective major diameter of described first electrode and the second electrode is parallel with the long limit of described crystal slab.
3. crystal vibrating device according to claim 1 and 2, wherein,
The thickness of described crystal slab successively decreases toward the outer side from central authorities.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012085339 | 2012-04-04 | ||
| JP2012-085339 | 2012-04-04 | ||
| PCT/JP2013/060091 WO2013151048A1 (en) | 2012-04-04 | 2013-04-02 | Crystal oscillation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103843249A CN103843249A (en) | 2014-06-04 |
| CN103843249B true CN103843249B (en) | 2016-01-20 |
Family
ID=49300529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380003284.3A Active CN103843249B (en) | 2012-04-04 | 2013-04-02 | Crystal vibrating device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5708881B2 (en) |
| CN (1) | CN103843249B (en) |
| WO (1) | WO2013151048A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10734968B2 (en) * | 2016-08-26 | 2020-08-04 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic resonator and filter including the same |
| JP7393283B2 (en) * | 2020-03-31 | 2023-12-06 | シチズンファインデバイス株式会社 | Thickness sliding crystal vibrating piece |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189414A (en) * | 2006-01-12 | 2007-07-26 | Epson Toyocom Corp | Piezoelectric vibration piece and piezoelectric device |
| JP2008218951A (en) * | 2007-03-08 | 2008-09-18 | Epson Toyocom Corp | Piezoelectric device with convex vibration piece |
| JP2009135830A (en) * | 2007-11-30 | 2009-06-18 | Epson Toyocom Corp | Crystal vibration piece, crystal vibrator, and crystal oscillator |
| JP2010021613A (en) * | 2008-07-08 | 2010-01-28 | Daishinku Corp | Piezoelectric vibration device |
| JP2011205516A (en) * | 2010-03-26 | 2011-10-13 | Seiko Epson Corp | Piezoelectric vibrating element and piezoelectric vibrator |
| JP2012065305A (en) * | 2010-08-20 | 2012-03-29 | Nippon Dempa Kogyo Co Ltd | Method for producing piezoelectric device and piezoelectric device |
-
2013
- 2013-04-02 CN CN201380003284.3A patent/CN103843249B/en active Active
- 2013-04-02 WO PCT/JP2013/060091 patent/WO2013151048A1/en active Application Filing
- 2013-04-02 JP JP2014509170A patent/JP5708881B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189414A (en) * | 2006-01-12 | 2007-07-26 | Epson Toyocom Corp | Piezoelectric vibration piece and piezoelectric device |
| JP2008218951A (en) * | 2007-03-08 | 2008-09-18 | Epson Toyocom Corp | Piezoelectric device with convex vibration piece |
| JP2009135830A (en) * | 2007-11-30 | 2009-06-18 | Epson Toyocom Corp | Crystal vibration piece, crystal vibrator, and crystal oscillator |
| JP2010021613A (en) * | 2008-07-08 | 2010-01-28 | Daishinku Corp | Piezoelectric vibration device |
| JP2011205516A (en) * | 2010-03-26 | 2011-10-13 | Seiko Epson Corp | Piezoelectric vibrating element and piezoelectric vibrator |
| JP2012065305A (en) * | 2010-08-20 | 2012-03-29 | Nippon Dempa Kogyo Co Ltd | Method for producing piezoelectric device and piezoelectric device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013151048A1 (en) | 2013-10-10 |
| CN103843249A (en) | 2014-06-04 |
| JP5708881B2 (en) | 2015-04-30 |
| JPWO2013151048A1 (en) | 2015-12-17 |
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