CN103843249A - Crystal oscillation device - Google Patents
Crystal oscillation device Download PDFInfo
- Publication number
- CN103843249A CN103843249A CN201380003284.3A CN201380003284A CN103843249A CN 103843249 A CN103843249 A CN 103843249A CN 201380003284 A CN201380003284 A CN 201380003284A CN 103843249 A CN103843249 A CN 103843249A
- Authority
- CN
- China
- Prior art keywords
- electrode
- crystal
- crystal slab
- slab
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 124
- 230000010355 oscillation Effects 0.000 title abstract description 4
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Provided is a crystal oscillation device having a low CI value. A crystal oscillation device (1) is provided with a crystal oscillator (11). The crystal oscillator (11) has a crystal plate (12), a first electrode (13), and a second electrode (14). The crystal plate (12) has a rectangular shape in a planar view. The crystal plate (12) has the shape with the thickness thereof reduced toward the outer side from the center. The first electrode (13) is disposed on one main surface (12a) of the crystal plate (12). The second electrode (14) is disposed on the other main surface (12b) of the crystal plate (12). The second electrode (14) faces the first electrode (13) with the crystal plate (12) therebetween. The crystal oscillator (11) oscillates in thickness-shear mode. Each of the first and the second electrodes (13, 14) has an elliptical or circular shape in a planar view.
Description
Technical field
The present invention relates to crystal vibrating device.
Background technology
In patent documentation 1 grade, the various crystal vibrating devices that possess quartz crystal are proposed.In patent documentation 1, the two sides that records on inclined-plane the crystal slab of (bevel) type, convex surface (convex) type has configured the crystal vibrating device of the electrode of essentially rectangular shape.
Patent documentation 1: Japan opens clear 58-11313 communique in fact
In crystal vibrating device, in order to improve the vibration efficiency of quartz crystal, reducing CI(Crystal Impedance: crystal impedance) value is effective.
Summary of the invention
Main purpose of the present invention is to provide the crystal vibrating device with low CI value.
Crystal vibrating device involved in the present invention possesses quartz crystal.Quartz crystal has crystal slab, the first electrode and the second electrode.The plan view shape of crystal slab is rectangle.Crystal slab has the shape of attenuation toward the outer side from central authorities.The first electrode is disposed on an interarea of crystal slab.The second electrode is disposed on another interarea of crystal slab.The second electrode is across crystal slab and the first electrode contraposition.Quartz crystal vibrates with thickness-shear vibration mode formula.The plan view shape separately of the first electrode and the second electrode is oval or circular.
In certain specific form of crystal vibrating device involved in the present invention, the major diameter separately of the first electrode and the second electrode is parallel with the long limit of crystal slab.
In other specific form of crystal vibrating device involved in the present invention, when the thickness of the central crystal slab in the region that is provided with the first electrode and the second electrode of crystal slab is made as to T
0, the thickness of the crystal slab of the end of the long limit of the crystal slab in the region that is provided with the first electrode and the second electrode of crystal slab bearing of trend is made as to T
1, the thickness of the crystal slab of the end of the crystal slab minor face bearing of trend in the region that is provided with the first electrode and the second electrode of crystal slab is made as to T
2time, meet 0.04T
0< T
0-T
1< 0.11T
0and 0.03T
0< T
0-T
2< 0.11T
0.
In other specific form of crystal vibrating device involved in the present invention, the thickness of crystal slab successively decreases toward the outer side from central authorities.
According to the present invention, can provide a kind of crystal vibrating device with low CI value.
Brief description of the drawings
Fig. 1 is the schematically cutaway view of the related crystal vibrating device of one embodiment of the present invention.
Fig. 2 is the schematically vertical view of the quartz crystal in one embodiment of the present invention.
Fig. 3 is the schematically cutaway view of the line III-III of Fig. 2.
Fig. 4 is the schematically cutaway view of the line IV-IV of Fig. 2.
Fig. 5 represents (T
0-T
1) and electromechanical coupling factor between the figure of relation.
Fig. 6 represents (T
0-T
2) and electromechanical coupling factor between the figure of relation.
Embodiment
Below, an example implementing preferred mode of the present invention is described.But following execution mode is only for illustrating.The present invention is not limited to following execution mode.
In addition, in execution mode etc., in each accompanying drawing of reference, the parts in fact with identical function utilize identical Reference numeral to carry out reference.In addition, in execution mode etc., the accompanying drawing of reference is the accompanying drawing of schematically recording, the situation that the ratio of the ratio etc. of depositing the size of the object described in the accompanying drawings and the size of real object etc. are different.Even if also there is at accompanying drawing each other, the different situations such as the dimension scale of object.The dimension scale of concrete object etc. should judge with reference to the following description.
Crystal vibrating device 1 possesses the quartz crystal 11 being arranged on substrate 10.Quartz crystal 11 vibrates with thickness-shear vibration mode formula.In crystal vibrating device 1, quartz crystal 11 is supported on substrate 10 in cantilever beam mode., quartz crystal also can be supported on substrate in beam supported at both ends mode.
On the interarea 12a of crystal slab 12, dispose the first electrode 13.On the interarea 12b of crystal slab 12, dispose the second electrode 14.The first electrode 13 and the second electrode 14 are opposed on the thickness direction of crystal slab 12 across crystal slab 12.The first electrode 13 and the second electrode 14 respectively can be for example by metals such as aluminium, silver, copper, gold, comprise that more than one the suitable electric conducting material such as alloy in these metals forms.
The plan view shape separately of the first electrode 13 and the second electrode 14 is oval or circular.In the present embodiment, particularly, the plan view shape separately of the first electrode 13 and the second electrode 14 is following ellipses: overlook Shi center and crystal slab 12 to overlook Shi center roughly consistent, and major diameter is parallel with the long limit of crystal slab 12.
Herein, be made as
T
0: the thickness of the central crystal slab 12 in the region that is provided with the first electrode 13 and the second electrode 14 of crystal slab 12,
T
1: the thickness of the crystal slab 12 of the end of the crystal slab 12 long limit bearing of trends in the region that is provided with the first electrode 13 and the second electrode 14 of crystal slab 12,
T
2: the thickness of the crystal slab 12 of the end of the crystal slab 12 minor face bearing of trends in the region that is provided with the first electrode 13 and the second electrode 14 of crystal slab 12.
In quartz crystal 11, to meet the mode of following formula (1) and formula (2), the first electrode 13 and the second electrode 14 are set.
0.04T
0＜T
0-T
1＜0.11T
0·········（1）
0.03T
0＜T
0-T
2＜0.11T
0·········（2）
But, in crystal slab, in the time applying voltage, there is the part part little with displacement that displacement is large.For example, in the little part of the displacement of crystal slab, electrode is set, even this part has been applied to voltage, the electric power being applied in is also lower to the contribution rate of vibration.In addition, because electric capacity increases, so electromechanical coupling factor reduces.Therefore, CI(Crystal Impedance: crystal impedance) value reduction.
Herein, in the case of have from central authorities toward the outer side the crystal slab 12 of the shape of attenuation be not square but rectangular shape, it is maximum that the displacement at crystal slab 12 center becomes.The isopleth of the displacement (deformation quantity) of crystal slab 12 becomes centered by crystal slab 12, the elliptical shape that major diameter is parallel with long limit.In the case of have from central authorities toward the outer side the crystal slab 12 of the shape of attenuation be square shape, it is maximum that the displacement at crystal slab 12 center becomes.The isopleth of the displacement (deformation quantity) of crystal slab 12 becomes the circle centered by crystal slab 12.Therefore, as crystal vibrating device 1, by be disposed at have from central authorities toward the outer side the first electrode 13 and the second electrode 14 interarea 12a, the 12b of the crystal slab of overlooking rectangular shape 12 of the shape of attenuation be made as ellipse or circle, can improve thus electromechanical coupling factor, consequently, can improve CI value.
Fig. 5 represents (T
0-T
1) and electromechanical coupling factor between the figure of relation.Fig. 6 represents (T
0-T
2) and electromechanical coupling factor between the figure of relation.Wherein, the figure when data shown in Fig. 5 and Fig. 6 are following conditions.
Crystal slab 12:AT cutting crystal plate
The length on the long limit of crystal slab 12: 1.95mm
The length of the minor face of crystal slab 12: 1.285mm
The thickness at crystal slab 12 center: 0.229mm(8MHz)
The radius of curvature of the interarea by the parallel section in Qie Yuchang limit, crystal slab 12 center: 11mm
The radius of curvature of the interarea by crystal slab 12 center and the section parallel with minor face: 4.785mm
Known according to the result shown in Fig. 5, in the situation that meeting formula (1), can obtain peaked more than 97% electromechanical coupling factor of electromechanical coupling factor.
Known according to the result shown in Fig. 6, in the situation that meeting formula (2), can obtain peaked more than 97% electromechanical coupling factor of electromechanical coupling factor.
As known from the above, by the mode that meets formula (1) and formula (2), the first electrode 13 and the second electrode 14 being set, can realize high CI value.
Description of reference numerals: 1 ... crystal vibrating device; 10 ... substrate; 11 ... quartz crystal; 12 ... crystal slab; 12a ... the first interarea; 12b ... the second interarea; 13 ... the first electrode; 14 ... the second electrode.
Claims (4)
1. a crystal vibrating device, wherein,
Possess the quartz crystal with the vibration of thickness-shear vibration mode formula, this quartz crystal has:
Crystal slab, its plan view shape is rectangle, and has the shape of attenuation toward the outer side from central authorities;
The first electrode, it is disposed on an interarea of described crystal slab;
The second electrode, it is disposed on another interarea of described crystal slab, and across described crystal slab and described the first electrode contraposition,
The plan view shape separately of described the first electrode and the second electrode is oval or circular.
2. crystal vibrating device according to claim 1, wherein,
The major diameter separately of described the first electrode and the second electrode is parallel with the long limit of described crystal slab.
3. crystal vibrating device according to claim 1 and 2, wherein,
When the thickness of the central described crystal slab in the region of described being provided with of described crystal slab the first electrode and the second electrode is made as to T
0,
The thickness of the described crystal slab of the end of the long limit of the described crystal slab bearing of trend in the region of described being provided with of described crystal slab the first electrode and the second electrode is made as to T
1,
The thickness of the described crystal slab of the end of the described crystal slab minor face bearing of trend in the region of described being provided with of described crystal slab the first electrode and the second electrode is made as to T
2time,
Meet 0.04T
0< T
0-T
1< 0.11T
0and
0.03T
0＜T
0-T
2＜0.11T
0。
4. according to the crystal vibrating device described in any one in claim 1～3, wherein,
The thickness of described crystal slab successively decreases toward the outer side from central authorities.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-085339 | 2012-04-04 | ||
| JP2012085339 | 2012-04-04 | ||
| PCT/JP2013/060091 WO2013151048A1 (en) | 2012-04-04 | 2013-04-02 | Crystal oscillation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103843249A true CN103843249A (en) | 2014-06-04 |
| CN103843249B CN103843249B (en) | 2016-01-20 |
Family
ID=49300529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380003284.3A Active CN103843249B (en) | 2012-04-04 | 2013-04-02 | Crystal vibrating device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5708881B2 (en) |
| CN (1) | CN103843249B (en) |
| WO (1) | WO2013151048A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10734968B2 (en) * | 2016-08-26 | 2020-08-04 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic resonator and filter including the same |
| JP7393283B2 (en) * | 2020-03-31 | 2023-12-06 | シチズンファインデバイス株式会社 | Thickness sliding crystal vibrating piece |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189414A (en) * | 2006-01-12 | 2007-07-26 | Epson Toyocom Corp | Piezoelectric vibration piece and piezoelectric device |
| JP2008218951A (en) * | 2007-03-08 | 2008-09-18 | Epson Toyocom Corp | Piezoelectric device with convex vibration piece |
| JP2009135830A (en) * | 2007-11-30 | 2009-06-18 | Epson Toyocom Corp | Crystal vibration piece, crystal vibrator, and crystal oscillator |
| JP2010021613A (en) * | 2008-07-08 | 2010-01-28 | Daishinku Corp | Piezoelectric vibration device |
| JP2011205516A (en) * | 2010-03-26 | 2011-10-13 | Seiko Epson Corp | Piezoelectric vibrating element and piezoelectric vibrator |
| JP2012065305A (en) * | 2010-08-20 | 2012-03-29 | Nippon Dempa Kogyo Co Ltd | Method for producing piezoelectric device and piezoelectric device |
-
2013
- 2013-04-02 JP JP2014509170A patent/JP5708881B2/en active Active
- 2013-04-02 WO PCT/JP2013/060091 patent/WO2013151048A1/en active Application Filing
- 2013-04-02 CN CN201380003284.3A patent/CN103843249B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189414A (en) * | 2006-01-12 | 2007-07-26 | Epson Toyocom Corp | Piezoelectric vibration piece and piezoelectric device |
| JP2008218951A (en) * | 2007-03-08 | 2008-09-18 | Epson Toyocom Corp | Piezoelectric device with convex vibration piece |
| JP2009135830A (en) * | 2007-11-30 | 2009-06-18 | Epson Toyocom Corp | Crystal vibration piece, crystal vibrator, and crystal oscillator |
| JP2010021613A (en) * | 2008-07-08 | 2010-01-28 | Daishinku Corp | Piezoelectric vibration device |
| JP2011205516A (en) * | 2010-03-26 | 2011-10-13 | Seiko Epson Corp | Piezoelectric vibrating element and piezoelectric vibrator |
| JP2012065305A (en) * | 2010-08-20 | 2012-03-29 | Nippon Dempa Kogyo Co Ltd | Method for producing piezoelectric device and piezoelectric device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5708881B2 (en) | 2015-04-30 |
| CN103843249B (en) | 2016-01-20 |
| WO2013151048A1 (en) | 2013-10-10 |
| JPWO2013151048A1 (en) | 2015-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4281348B2 (en) | Piezoelectric vibrating piece, piezoelectric device using the piezoelectric vibrating piece, mobile phone device using the piezoelectric device, and electronic equipment using the piezoelectric device | |
| CN102340291B (en) | Flexural resonator element, resonator, oscillator, and electronic device | |
| EP2341619A2 (en) | Resonator element, resonator, oscillator, electronic device, and frequency adjustment method | |
| EP2341620A2 (en) | Vibrating reed, vibrator, oscillator, electronic device, and frequency adjustment method | |
| JP2011097562A (en) | Vibrating piece, vibrator, oscillator, and electronic apparatus | |
| US10312883B2 (en) | Elastic wave device | |
| JP2005150992A (en) | Piezoelectric oscillating piece and its manufacturing process, piezoelectric device, portable telephone and electronic apparatus employing piezoelectric device | |
| TW201214963A (en) | Vibrator element, vibrator, oscillator, and electronic device | |
| JP2018074267A (en) | Piezoelectric vibration piece and piezoelectric device | |
| JP2010283804A (en) | Piezoelectric frame and piezoelectric device | |
| CN103843249A (en) | Crystal oscillation device | |
| CN113519120A (en) | Elastic wave device | |
| JP5100408B2 (en) | Tuning fork type piezoelectric vibrator | |
| JP2013062643A (en) | Vibration piece, vibrator, oscillator, and electronic apparatus | |
| JP2010226610A (en) | Bent vibrating piece and oscillator employing the same | |
| JPWO2019049893A1 (en) | Elastic wave device | |
| JP2011199330A (en) | Vibration piece, vibrator, and oscillator | |
| JP5811216B2 (en) | Vibrating piece, vibrator, oscillator | |
| JP2014093627A (en) | Piezoelectric vibrator | |
| EP1887691A1 (en) | Piezoelectric resonator with short-circuits preventing means | |
| JP2007103996A (en) | Package for piezoelectric device | |
| JP2006339701A (en) | Piezoelectric vibrator | |
| JP2012160995A (en) | Vibrator element, vibrator, oscillator, and electronic apparatus | |
| JP2006074272A (en) | Crystal vibrating plate and its manufacturing method | |
| JP2018101927A (en) | Piezoelectric vibrator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |