CN103839014A - Self-destruction circuit of tablet personal computer storage device - Google Patents
Self-destruction circuit of tablet personal computer storage device Download PDFInfo
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- CN103839014A CN103839014A CN201410103170.2A CN201410103170A CN103839014A CN 103839014 A CN103839014 A CN 103839014A CN 201410103170 A CN201410103170 A CN 201410103170A CN 103839014 A CN103839014 A CN 103839014A
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- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
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Abstract
The invention discloses a self-destruction circuit of a tablet personal computer storage device. The self-destruction circuit comprises a detecting unit, a switching unit and a destruction unit. The detecting unit is used for detecting whether a tablet personal computer is illegally disassembled or not and generating a corresponding computer disassembling signal; the switching unit is electrically connected to the detecting unit and used for connecting a direct current power source to the destruction unit according to the corresponding computer disassembling signal and providing input voltage to the destruction unit; the destruction unit comprises a voltage boosting circuit which is electrically connected to the switching unit and used for boosting the input voltage provided by the switching unit so that destruction voltage can be generated and outputting the destruction voltage to signal pins of the tablet personal computer storage device. Device cost can be reduced, circuit integration is convenient, and the self-destruction circuit can be widely applied to the tablet personal computer and other precise devices which are small in size and high in requirement.
Description
Technical field
The present invention relates to a kind of self-destruct circuit, be specifically related to a kind of panel computer memory device self-destruct circuit.
Background technology
Along with informationalized development, the usable range of panel computer has also obtained universal greatly, and people can be stored in data in the memory device of panel computer, as NAND Flash, Tf-Card etc. with the formation of electronic document.In order to prevent that storing data is stolen, prior art can be protected data by various software or hardware configuration, as tears machine self-destruct circuit open, and this object of tearing machine self-destruct circuit open is to prevent that the mode by disassembling memory device from obtaining the data on memory device.The machine of tearing open self-destruct circuit is in the market mainly by programmable device pilot relay, large electric capacity to be charged and the large transient energy of output that sparks reaches back-end circuit is burnt to function.But, this class self-destruct circuit needs the electric capacity of several thousand microfarads, take the SIKOREL125 25v3000uf 3300uf of EPCOS (Siemens) as example, the volume of this electric capacity is 21x38mm(diameter * height), its volume is larger, price is high, not only improved cost and be not easy to circuit integrated, obviously and be not suitable for being applied to this small size of panel computer and require high precision equipment.
Summary of the invention
For the deficiencies in the prior art, the present invention proposes a kind of panel computer memory device self-destruct circuit, can reduce equipment cost and be convenient to circuit integrated, can be widely used in this small size of panel computer and require high precision equipment.
In order to achieve the above object, the technical solution adopted in the present invention is as follows:
A kind of panel computer memory device self-destruct circuit, comprises detecting unit, switch unit and damage unit; Whether described detecting unit, illegally torn open machine for detection of panel computer, and generate the corresponding machine of tearing open signal; Described switch unit, it is electrically connected to this detecting unit, for tear machine signal open according to correspondence, one direct supply is connected to described damage unit and provides an input voltage to described damage unit; Described damage unit, it comprises a booster circuit, this booster circuit is electrically connected to this switch unit, boosts to generate a damage voltage for the input voltage that this switch unit is provided, and by this damage Voltage-output the signal pin to panel computer memory device.
Preferably, described booster circuit is the DC boosting modular converter without feedback.
Preferably, described DC boosting modular converter comprises DC boost converter, the first diode, the 4th to the 9th electric capacity, the first to second inductance and the 6th to the 9th resistance; Wherein, the voltage input end of this DC boost converter is connected to the output terminal of this switch unit by this second inductance, also by the 4th electric capacity in parallel and the 5th capacity earth, also, successively by the 6th resistance and the 6th capacity earth, be also connected to the voltage output end of this DC boost converter by the 3rd inductance; The power control terminal of this DC boost converter is connected between the 6th resistance and the 6th electric capacity; The voltage output end of this DC boost converter is connected to the anode of this first diode; The overvoltage protection end of this DC boost converter is connected to the negative electrode of this first diode; The feedback input end of this DC boost converter is connected to the negative electrode of this first diode by the 7th electric capacity, also successively by the 8th resistance and the 9th resistance eutral grounding of the 7th resistance, parallel connection; The negative electrode of this first diode is by the 8th electric capacity in parallel and the 9th capacity earth.
Preferably, described damage unit also comprises a comparator circuit and an electronic switching circuit; Described comparator circuit is electrically connected to booster circuit, for the threshold value prestoring in described damage voltage and comparator circuit is compared, and according to the corresponding signal that drives of comparative result output; Described electronic switching circuit comprises that an input end, an output terminal and receive the control end of described driving signal, this electronic switching circuit is for correspondingly conducting or disconnection under the control of this driving signal, the input end of this electronic switching circuit is connected to the output terminal of booster circuit, and the output terminal of this electronic switching circuit is connected to the signal pin of panel computer memory device.
Preferably, described damage unit also comprises an anti-back flow circuit, and this anti-back flow circuit is electrically connected between electronic switching circuit and dull and stereotyped computer storage equipment; The output terminal of described switch unit is connected to the input end of booster circuit by one first filtering circuit; The input end of described electronic switching circuit is connected to the output terminal of booster circuit by one second filtering circuit.
Preferably, described damage unit also comprises pwm control circuit and electronic switching circuit; Described pwm control circuit is electrically connected to this booster circuit, and for exporting periodic drive control signal, described electronic switching circuit is for correspondingly conducting or disconnection under the control of this drive control signal; Described electronic switching circuit comprises that an input end, an output terminal and receive the control end of described drive control signal, the input end of this electronic switching circuit is connected to the output terminal of booster circuit, and the output terminal of this electronic switching circuit is connected to the signal pin of panel computer memory device.
Preferably, described pwm control circuit comprises the first pwm pulse generator, the second pwm pulse generator, the 4th triode, the second diode, the tenth electric capacity and the 12 to the 16 resistance; Wherein, the output terminal of this first pwm pulse generator connects the input end of this second pwm pulse generator, and the output terminal of this first pwm pulse generator is connected the input end of this first pwm pulse generator successively with the 15 resistance by the 16 resistance; The output terminal of this second pwm pulse generator is connected between the 16 resistance and the 15 resistance by the tenth electric capacity; The base stage of the 4th triode is connected between this first pwm pulse generator and this second pwm pulse generator by the 14 resistance, the grounded emitter of the 4th triode, and the collector of the 4th triode connects the negative electrode of this second diode; The anode of this second diode is connected to the output terminal of booster circuit successively by the 13 resistance and the 12 resistance; Node between the 13 resistance and the 12 resistance is connected to the control end of this electronic switching circuit.
Preferably, described detecting unit comprises that first signal gathers line, the first triode, the first electric capacity and the first to the 5th resistance; Wherein, the signal output part that this first signal gathers line is connected to described direct supply by this first resistance and this second resistance successively, also be connected between this first resistance and this second resistance by this first electric capacity, and this first signal gathers the signal output part ground connection of line; The base stage of this first triode is connected between this first resistance and this second resistance by the 3rd resistance, and the collector of this first triode is connected to described direct supply by the 5th resistance, is also connected to described switch unit by the 4th resistance; The grounded emitter of this first triode.
Preferably, described testing circuit also comprises that secondary signal gathers line, and the signal output part that this secondary signal gathers line is connected between this resistance and this second resistance.
Preferably, described direct supply is the internal battery that panel computer carries.
Compared with prior art, the present invention is in the time detecting that panel computer is illegally torn open machine, can direct supply be connected to damage unit and provide an input voltage to damage unit by switch unit, after boosting above-mentioned input voltage, the booster circuit of damage unit generates the damage voltage of a high-voltage great-current, and by this damage Voltage-output to the signal pin of panel computer memory device (as the RE pin of NAND Flash, the clock pins of Tf-Card), to puncture memory device, realize the damage to panel computer memory device.The present invention has following beneficial effect:
1, the present invention is in the time detecting that panel computer is illegally torn open machine, the input voltage that directly adopts a booster circuit to provide the direct supply processing of boosting, to obtain the damage voltage of a high-voltage great-current, large electric capacity charged by programmable device pilot relay with prior art and spark to obtain compared with a large transient energy, it can avoid the use of large electric capacity, thereby reduce equipment cost and to be convenient to circuit integrated, can be widely used in this small size of panel computer and require high precision equipment.
2, the present invention is just connected to direct supply damage unit and provides an input voltage to damage unit by switch unit in the time detecting that panel computer is illegally torn open machine, and compared with prior art, its stand-by power consumption is very little, only needs 10uA left and right.
3, the present invention adopts a DC boosting modular converter without feedback as booster circuit, can obtain rapidly the damage voltage of a high-voltage great-current, and fully puncture panel computer memory device.
4, the present invention also realizes the control to damage voltage value by comparator circuit and electronic switching circuit, can guarantee that the damage voltage that exports panel computer memory device to reaches threshold values, to improve the reliability of damage by pre-set threshold value.
5, direct supply of the present invention is the internal battery that panel computer carries, and self-destruct circuit on market all needs battery of extra carry to work.
Accompanying drawing explanation
Fig. 1 is the circuit block diagram of the preferred embodiment of panel computer memory device self-destruct circuit of the present invention;
Fig. 2 is the circuit diagram of detecting unit in Fig. 1;
Fig. 3 is the circuit diagram of switch unit in Fig. 1;
Fig. 4 is the circuit diagram of damaging unit in Fig. 1;
Fig. 5 is second embodiment of panel computer memory device self-destruct circuit of the present invention;
Fig. 6 is the circuit diagram of damaging unit in Fig. 5.
Embodiment
Below, by reference to the accompanying drawings and embodiment, the present invention is described further, understands the present invention's technological thought required for protection so that clearer.
In the specific descriptions of following preferred embodiment, with reference to the appended accompanying drawing that forms a part of the present invention.Appended accompanying drawing shows by way of example can realize specific embodiment of the present invention, and the embodiment of example is not intended to limit according to all embodiment of the present invention.Be appreciated that not departing under the prerequisite of scope of the present invention, can utilize other embodiment, also can carry out the modification of structural or logicality.Therefore, following specific descriptions are also nonrestrictive, and scope of the present invention is limited by appended claim.
Refer to Fig. 1, the present invention relates to a kind of panel computer memory device self-destruct circuit, its preferred embodiments comprises detecting unit 100, switch unit 200 and damage unit 300.
Whether detecting unit 100 is illegally torn open machine for detection of panel computer, and generates the corresponding machine of tearing open signal.The casing of panel computer comprises a face-piece and back cover, thereby in the time that this face-piece is disassembled away from back cover, this detecting unit 100 is corresponding to be generated one and tear machine signal open, and this is torn open to machine signal and is sent to this switch unit 200.To this, detecting unit 100 also can be selected the multiple generating mode of tearing machine signal open existing in prior art, as by microswitch, light activated switch etc. being set in face-piece inner side, and also can be by pressure sensitive device.
In the present embodiment, detecting unit 100 comprises that first signal gathers line (not shown), secondary signal gathers line (not shown), triode Q1, capacitor C 1 and resistance R 1 to resistance R 5.First signal gathers the signal output part (TEST1PI of line, TEST1NI) be connected to a direct supply VBAT by this resistance R 1 and this resistance R 2 successively, also be connected between this resistance R 1 and this resistance R 2 by this capacitor C 1, and signal output part (TEST1PI, the TEST1NI) ground connection of this signals collecting line.The signal output part (TEST1P2, TEST1N2) that this secondary signal gathers line is connected between this resistance R 1 and this resistance R 2.The base stage of this triode Q1 connects the signal output part (TEST1P2, TEST1N2) of this secondary signal collection line by resistance R 3; The collector of this triode Q1 is connected to this direct supply VBAT by this resistance R 5, is also connected to this switch unit 200 by this resistance R 4, and this tears machine signal EN_KILL open to switch unit 200 outputs; The grounded emitter of this triode Q1.
This first signal gathers line and is arranged in a broken string box, and the two ends soldering of this first signal collection line is upper in the PCBA of panel computer, and under normal circumstances, this first signal gathers line in "on" position.This broken string box is positioned on PCBA, and face-piece inner side is provided with a buckle to the position of the box that should break, in the time that face-piece is disassembled, this buckle closely fastens this broken string box and drives it to the direction motion away from back cover, gathers line thereby pull apart the first signal being arranged in this broken string box.In the present embodiment, for fear of occurring the problem of getting stuck, guarantee accuracy and sensitivity to illegally tearing machine testing open, the present embodiment disposes this secondary signal and gathers line, it is the same that it gathers line with first signal, be also arranged in this broken string box, and the two ends soldering that this secondary signal gathers line is on the PCBA of panel computer, under normal circumstances, this secondary signal gathers line in "on" position; In the time that face-piece is disassembled, this secondary signal gathers line and is torn.In some other embodiment, also can cancel this secondary signal and gather line.
Below the present embodiment detecting unit 100 principle of work are described: under normal circumstances, this first signal gathers line and secondary signal gathers line all in "on" position, now triode Q1 conducting, the collector of triode Q1 is drawn high to high level by resistance R 5 and direct supply VBAT, and generates the high level of tearing machine signal EN_KILL open; In the time that face-piece is disassembled, first signal gathers in line and/or secondary signal collection line and is torn, now triode Q1 cut-off, and the collector of triode Q1 is dragged down, and starts the low level that machine signal EN_KILL is torn in output open.Wherein, resistance R 1 and capacitor C 1 form the anti-circuit that gushes.
Wherein, this first filtering circuit 310, booster circuit 320 and the second filtering circuit 330 are electrically connected successively, and this input voltage KILL_VDD that switch unit 200 provides is boosted after voltage is damaged in generation one and carried out filtering by this second filtering circuit 330 again by these the first filtering circuit 310 filtering, this booster circuit 320 successively.This comparator circuit 340 is electrically connected to booster circuit 320, for the threshold value prestoring in above-mentioned damage voltage and comparator circuit is compared, and according to the corresponding signal that drives of comparative result output.This electronic switching circuit 350 comprises that an input end, an output terminal and receive the control end of this driving signal, this electronic switching circuit 350 is for correspondingly conducting or disconnection under the control at this driving signal, the input end of this electronic switching circuit 350 is connected to the output terminal of booster circuit 320, the output terminal of this electronic switching circuit 350 is connected to the signal pin (as the RE pin of NAND Flash, the clock pins of Tf-Card) of panel computer memory device by this anti-back flow circuit 360.The present invention realizes the control to damage voltage value by comparator circuit 340 and electronic switching circuit 350, can guarantee that the damage voltage that exports panel computer memory device to reaches threshold values, to improve the reliability of damage by pre-set threshold value.
In the present embodiment, booster circuit 320 is that this DC boosting modular converter comprises that DC boost converter U1, diode D1, capacitor C 6 are to capacitor C 9, inductance L 2 and resistance R 6 to resistance R 9 without the DC boosting modular converter of feedback.Wherein, the voltage input end VIN of this DC boost converter U1 is connected to the output terminal of this switch unit 200, also, successively by these resistance R 6 and the 6th capacitor C 6 ground connection, is also connected to the voltage output end SW of this DC boost converter by this inductance L 2.The power control terminal SHDN of this DC boost converter U1 is connected between this this resistance R 6 and the 6th capacitor C 6.The voltage output end SW of this DC boost converter U1 is connected to the anode of diode D1.The overvoltage protection end OVP of this DC boost converter U1 is connected to the negative electrode of this diode D1.The feedback input end FB of this DC boost converter U1 is connected to the negative electrode of this diode D1 by the 7th capacitor C 7, also successively by this resistance R 8 and this resistance R 9 ground connection of this resistance R 7, parallel connection.The negative electrode of this diode D1 is by these capacitor C 87 and these capacitor C 9 ground connection in parallel, and the negative electrode of this diode D1 is the output terminal of booster circuit 320.
The chip model that DC boost converter U1 adopts is SY7200, DC boosting modular converter of the present invention can be by the feedback input end FB of DC boost converter U1 directly successively by this resistance R 8 and this resistance R 9 ground connection of this resistance R 7, parallel connection, form a voltage increase and current constant circuit without feedback, thereby can obtain rapidly the damage voltage of a high-voltage great-current, and fully puncture panel computer memory device.
As preferably, this comparator circuit 340 is a comparator circuit being made up of voltage-reference, and those skilled in the art can build a circuit with comparing function of the present invention by chip TL431 according to prior art.This electronic switching circuit 350 is a field effect transistor, and control end, input end and the output terminal of this electronic switching circuit 350 corresponds to grid, source electrode and the drain electrode of this field effect transistor.As preferably, this anti-back flow circuit 360 is diode.
In the present embodiment, direct supply VBAT is the internal battery that panel computer carries, and self-destruct circuit on market all needs battery of extra carry to work.
In other embodiments, damage unit also can adopt other implementations, as shown in Figure 5, for second embodiment of panel computer memory device self-destruct circuit of the present invention, the difference of itself and above-mentioned embodiment is mainly, the comparator circuit of the threshold value that prestores is replaced with to a pwm control circuit, particularly, in the second embodiment, damage unit comprises the first filtering circuit 310 ', booster circuit 320 ', pwm control circuit 330 ' and electronic switching circuit 340 '.
This first filtering circuit 310 ' output terminal connects the input end of this booster circuit 320 ', this input voltage KILL_VDD that switch unit 200 provides boosts by being delivered to booster circuit 320 ' after this first filtering circuit 310 ' filtering successively, and the corresponding upper damage voltage that generates of storage capacitor C11 in this booster circuit 320 '.
This pwm control circuit 330 ' is electrically connected to booster circuit 320, for exporting periodic drive control signal.This electronic switching circuit 340 ' is for correspondingly conducting or disconnection under the control of this drive control signal; This electronic switching circuit 340 ' comprises that an input end, an output terminal and receive the control end of above-mentioned drive control signal, the input end of this electronic switching circuit is connected to the output terminal of booster circuit, the output terminal of this electronic switching circuit is connected to the signal pin (as the RE pin of NAND Flash, the clock pins of Tf-Card) of panel computer memory device.In the present embodiment, electronic switching circuit 340 ' is periodically conducting and disconnection under the drive control signal of pwm control circuit 330 ', in the time of electronic switching circuit 340 ' conducting, booster circuit 320 ' is delivered to signal pin to panel computer memory device (as the RE pin of NAND Flash by damage voltage, the clock pins of Tf-Card), in the time that electronic switching circuit 340 ' disconnects, booster circuit 320 ' stops damaging the conveying of voltage, now the storage capacitor C11 in booster circuit continues charging (for example can form the damage voltage of 29V by booster circuit on this storage capacitor C11), therefore, in the continuous charge and discharge process of storage capacitor C11, can be constantly panel computer memory device is damaged power is provided.
More specifically, this pwm control circuit 330 ' comprises that pwm pulse generator U2, pwm pulse generator U3, triode Q4, diode D2, capacitor C 10 and resistance R 12 are to resistance R 16.Wherein, the output terminal of this pwm pulse generator U2 connects the input end of this pwm pulse generator U3, and the output terminal of this pwm pulse generator U2 is connected the input end of this pwm pulse generator U2 successively with this resistance R 15 by this resistance R 16; The output terminal of this pwm pulse generator U3 is connected between this resistance R 16 and this resistance R 15 by this capacitor C 10; The base stage of this triode Q4 is connected between this pwm pulse generator U2 and this pwm pulse generator U3 by this resistance R 14, the grounded emitter of this triode Q4, and the collector of this triode Q4 connects the negative electrode of this diode D2; The anode of this diode D2 is connected to the output terminal of booster circuit 320 ' successively by this resistance R 13 and this resistance R 12; Node between this resistance R 13 and this resistance R 12 is connected to the control end of this electronic switching circuit 340 ', for exporting drive control signal.
Said PWM pulse producer U2, pwm pulse generator U3, resistance R 16, resistance R 15 and the common formation one of capacitor C 10 have the some cycles square-wave generator of (if the cycle is 480ms), periodically to export low and high level signal, in the time that it is output as the high level of square wave, triode Q4 conducting, and then impel electronic switching circuit 340 ' conducting, in the time that it is output as the low level of square wave, triode Q4 cut-off, impels electronic switching circuit 340 ' to disconnect.
This electronic switching circuit 340 ' is a field effect transistor, and control end, input end and the output terminal of this electronic switching circuit 350 corresponds to grid, source electrode and the drain electrode of this field effect transistor.As preferably, this anti-back flow circuit 360 is diode.The chip model of pwm pulse generator U2 and pwm pulse generator U3 is U307.
For a person skilled in the art, can be according to technical scheme described above and design, make other various corresponding changes and distortion, and these all changes and distortion all should belong to the protection domain of the claims in the present invention within.
Claims (10)
1. a panel computer memory device self-destruct circuit, is characterized in that, comprises detecting unit, switch unit and damage unit, wherein:
Whether described detecting unit, illegally torn open machine for detection of panel computer, and generate the corresponding machine of tearing open signal;
Described switch unit, it is electrically connected to this detecting unit, for tear machine signal open according to correspondence, one direct supply is connected to described damage unit and provides an input voltage to described damage unit;
Described damage unit, it comprises a booster circuit, this booster circuit is electrically connected to this switch unit, boosts to generate a damage voltage for the input voltage that this switch unit is provided, and by this damage Voltage-output the signal pin to panel computer memory device.
2. panel computer memory device self-destruct circuit as claimed in claim 1, is characterized in that, described booster circuit is the DC boosting modular converter without feedback.
3. panel computer memory device self-destruct circuit as claimed in claim 2, is characterized in that, described DC boosting modular converter comprises DC boost converter, the first diode, the 6th to the 9th electric capacity, the second inductance and the 6th to the 9th resistance; Wherein, the voltage input end of this DC boost converter is connected to the output terminal of this switch unit, also, successively by the 6th resistance and the 6th capacity earth, is also connected to the voltage output end of this DC boost converter by the 3rd inductance; The power control terminal of this DC boost converter is connected between the 6th resistance and the 6th electric capacity; The voltage output end of this DC boost converter is connected to the anode of this first diode; The overvoltage protection end of this DC boost converter is connected to the negative electrode of this first diode; The feedback input end of this DC boost converter is connected to the negative electrode of this first diode by the 7th electric capacity, also successively by the 8th resistance and the 9th resistance eutral grounding of the 7th resistance, parallel connection; The negative electrode of this first diode is by the 8th electric capacity in parallel and the 9th capacity earth.
4. panel computer memory device self-destruct circuit as claimed in claim 1, is characterized in that, described damage unit also comprises a comparator circuit and an electronic switching circuit; Described comparator circuit is electrically connected to booster circuit, for the threshold value prestoring in described damage voltage and comparator circuit is compared, and according to the corresponding signal that drives of comparative result output; Described electronic switching circuit comprises that an input end, an output terminal and receive the control end of described driving signal, this electronic switching circuit is for correspondingly conducting or disconnection under the control of this driving signal, the input end of this electronic switching circuit is connected to the output terminal of booster circuit, and the output terminal of this electronic switching circuit is connected to the signal pin of panel computer memory device.
5. panel computer memory device self-destruct circuit as claimed in claim 4, is characterized in that, described damage unit also comprises an anti-back flow circuit, and this anti-back flow circuit is electrically connected between electronic switching circuit and dull and stereotyped computer storage equipment; The output terminal of described switch unit is connected to the input end of booster circuit by one first filtering circuit; The input end of described electronic switching circuit is connected to the output terminal of booster circuit by one second filtering circuit.
6. panel computer memory device self-destruct circuit as claimed in claim 1, is characterized in that, described damage unit also comprises pwm control circuit and electronic switching circuit; Described pwm control circuit is electrically connected to this booster circuit, and for exporting periodic drive control signal, described electronic switching circuit is for correspondingly conducting or disconnection under the control of this drive control signal; Described electronic switching circuit comprises that an input end, an output terminal and receive the control end of described drive control signal, the input end of this electronic switching circuit is connected to the output terminal of booster circuit, and the output terminal of this electronic switching circuit is connected to the signal pin of panel computer memory device.
7. panel computer memory device self-destruct circuit as claimed in claim 6, it is characterized in that, described pwm control circuit comprises the first pwm pulse generator, the second pwm pulse generator, the 4th triode, the second diode, the tenth electric capacity and the 12 to the 16 resistance; Wherein, the output terminal of this first pwm pulse generator connects the input end of this second pwm pulse generator, and the output terminal of this first pwm pulse generator is connected the input end of this first pwm pulse generator successively with the 15 resistance by the 16 resistance; The output terminal of this second pwm pulse generator is connected between the 16 resistance and the 15 resistance by the tenth electric capacity; The base stage of the 4th triode is connected between this first pwm pulse generator and this second pwm pulse generator by the 14 resistance, the grounded emitter of the 4th triode, and the collector of the 4th triode connects the negative electrode of this second diode; The anode of this second diode is connected to the output terminal of booster circuit successively by the 13 resistance and the 12 resistance; Node between the 13 resistance and the 12 resistance is connected to the control end of this electronic switching circuit.
8. panel computer memory device self-destruct circuit as claimed in claim 1, is characterized in that, described detecting unit comprises that first signal gathers line, the first triode, the first electric capacity and the first to the 5th resistance; Wherein, the signal output part that this first signal gathers line is connected to described direct supply by this first resistance and this second resistance successively, also be connected between this first resistance and this second resistance by this first electric capacity, and this first signal gathers the signal output part ground connection of line; The base stage of this first triode is connected between this first resistance and this second resistance by the 3rd resistance, and the collector of this first triode is connected to described direct supply by the 5th resistance, is also connected to described switch unit by the 4th resistance; The grounded emitter of this first triode.
9. panel computer memory device self-destruct circuit as claimed in claim 8, is characterized in that, described testing circuit also comprises that secondary signal gathers line, and the signal output part that this secondary signal gathers line is connected between this resistance and this second resistance.
10. panel computer memory device self-destruct circuit as claimed in claim 1, is characterized in that, described direct supply is the internal battery that panel computer carries.
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| CN201410103170.2A CN103839014B (en) | 2014-03-19 | 2014-03-19 | Self-destruction circuit of tablet personal computer storage device |
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| CN201410103170.2A CN103839014B (en) | 2014-03-19 | 2014-03-19 | Self-destruction circuit of tablet personal computer storage device |
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| CN103839014B CN103839014B (en) | 2017-02-22 |
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| CN104317362A (en) * | 2014-10-27 | 2015-01-28 | 北京同方时讯电子股份有限公司 | Tablet personal computer with high data security |
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| CN106991341A (en) * | 2016-09-08 | 2017-07-28 | 宜鼎国际股份有限公司 | Possesses the flash memory device that entity destroys function |
| CN107657183A (en) * | 2017-08-31 | 2018-02-02 | 中国人民解放军海军医学研究所 | The data security protection method and device of electronic equipment |
| CN109038509A (en) * | 2018-08-13 | 2018-12-18 | 澳菲科技（深圳）有限公司 | The protective device for preventing the programming information in processor stolen |
| CN109526179A (en) * | 2018-12-24 | 2019-03-26 | 出门问问信息科技有限公司 | Tear the detection device and detection method, electronic equipment of machine testing open for electronic equipment |
| CN109543469A (en) * | 2018-10-24 | 2019-03-29 | 佛山市禅信通科技有限公司 | A kind of self-desttruction equipment and its method of data storage device |
| CN110281872A (en) * | 2019-05-09 | 2019-09-27 | 广州优创电子有限公司 | Control circuit and controller of vehicle |
| CN110456202A (en) * | 2019-08-23 | 2019-11-15 | 中控智慧(广东)科技有限公司 | A kind of tamper machine testing control circuit and electronic equipment |
| CN111046442A (en) * | 2019-12-11 | 2020-04-21 | 上海载德信息科技股份有限公司 | Self-destruction circuit of storage component of equipment and equipment with storage function |
| CN112214804A (en) * | 2020-10-16 | 2021-01-12 | 天津津航计算技术研究所 | Micro-system chip for preventing vacuum packaging cap opening cracking |
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| CN104123513A (en) * | 2014-07-29 | 2014-10-29 | 中国航空无线电电子研究所 | Machine-mounted high-speed large-capacity data storage system with self-destruction function and self-destruction method |
| CN104317362A (en) * | 2014-10-27 | 2015-01-28 | 北京同方时讯电子股份有限公司 | Tablet personal computer with high data security |
| CN104331675A (en) * | 2014-10-27 | 2015-02-04 | 北京同方时讯电子股份有限公司 | Self-destruction device of electronic equipment |
| CN104361904B (en) * | 2014-11-06 | 2017-02-22 | 广东省电子信息产业集团有限公司 | Destroying device of nonvolatile storage |
| CN104361904A (en) * | 2014-11-06 | 2015-02-18 | 广东省电子信息产业集团有限公司 | Destroying device of nonvolatile storage |
| WO2016141619A1 (en) * | 2015-03-10 | 2016-09-15 | 深圳市贝沃德克生物技术研究院有限公司 | Board anti-disassembling device and method |
| CN104820809A (en) * | 2015-03-10 | 2015-08-05 | 深圳市前海安测信息技术有限公司 | Complete machine product anti-disassembling apparatus and method |
| CN104820810A (en) * | 2015-03-10 | 2015-08-05 | 深圳市前海安测信息技术有限公司 | Board card anti-disassembly apparatus and method |
| CN104850805A (en) * | 2015-05-29 | 2015-08-19 | 北京华大信安科技有限公司 | Device and method for protecting sensitive information of chip system |
| CN105657169A (en) * | 2016-01-05 | 2016-06-08 | 广东欧珀移动通信有限公司 | Data protection method, device and mobile terminal |
| CN105657169B (en) * | 2016-01-05 | 2019-02-19 | Oppo广东移动通信有限公司 | A kind of data guard method, device and mobile terminal |
| CN105718821A (en) * | 2016-01-15 | 2016-06-29 | 广东欧珀移动通信有限公司 | Terminal and data protection apparatus and method therefor |
| CN106991341A (en) * | 2016-09-08 | 2017-07-28 | 宜鼎国际股份有限公司 | Possesses the flash memory device that entity destroys function |
| CN106991341B (en) * | 2016-09-08 | 2020-04-24 | 宜鼎国际股份有限公司 | Flash memory device with entity destroying function |
| CN107657183A (en) * | 2017-08-31 | 2018-02-02 | 中国人民解放军海军医学研究所 | The data security protection method and device of electronic equipment |
| CN107657183B (en) * | 2017-08-31 | 2020-03-27 | 中国人民解放军海军医学研究所 | Data security protection method and device for electronic equipment |
| CN109038509A (en) * | 2018-08-13 | 2018-12-18 | 澳菲科技（深圳）有限公司 | The protective device for preventing the programming information in processor stolen |
| CN109543469A (en) * | 2018-10-24 | 2019-03-29 | 佛山市禅信通科技有限公司 | A kind of self-desttruction equipment and its method of data storage device |
| CN109543469B (en) * | 2018-10-24 | 2023-03-17 | 广东禅信通科技有限公司 | Self-destruction device and method of data storage equipment |
| CN109526179A (en) * | 2018-12-24 | 2019-03-26 | 出门问问信息科技有限公司 | Tear the detection device and detection method, electronic equipment of machine testing open for electronic equipment |
| CN110281872A (en) * | 2019-05-09 | 2019-09-27 | 广州优创电子有限公司 | Control circuit and controller of vehicle |
| CN110456202A (en) * | 2019-08-23 | 2019-11-15 | 中控智慧(广东)科技有限公司 | A kind of tamper machine testing control circuit and electronic equipment |
| CN111046442A (en) * | 2019-12-11 | 2020-04-21 | 上海载德信息科技股份有限公司 | Self-destruction circuit of storage component of equipment and equipment with storage function |
| CN112214804A (en) * | 2020-10-16 | 2021-01-12 | 天津津航计算技术研究所 | Micro-system chip for preventing vacuum packaging cap opening cracking |
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