CN109543469B - Self-destruction device and method of data storage equipment - Google Patents

Self-destruction device and method of data storage equipment Download PDF

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Publication number
CN109543469B
CN109543469B CN201811242187.0A CN201811242187A CN109543469B CN 109543469 B CN109543469 B CN 109543469B CN 201811242187 A CN201811242187 A CN 201811242187A CN 109543469 B CN109543469 B CN 109543469B
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self
destruction
voltage
chip
resistor
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CN109543469A (en
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石庆谱
张兴恩
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Guangdong Chanxintong Technology Co ltd
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Guangdong Chanxintong Technology Co ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/78Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Software Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Storage Device Security (AREA)

Abstract

The invention discloses a self-destruction device and a method thereof of data storage equipment, wherein the device comprises: the voltage boosting circuit comprises a voltage boosting chip, an inductor, a field effect tube, a freewheeling diode, a first resistor and a second resistor, wherein the voltage boosting chip is used for boosting the basic voltage to a destruction voltage. The method comprises the following steps: judging whether the self-destruction device is in a self-destruction activation mode or not; if the self-destruction device is in a self-destruction activation mode, judging whether a self-destruction signal is received or not; and if the self-destruction signal is received, the booster circuit is excited, and the storage chip of the data storage device is burnt by voltage. The invention can be used in the technical field of information security.

Description

Self-destruction device and method of data storage equipment
Technical Field
The invention relates to the technical field of information safety devices, in particular to a self-destruction device and a self-destruction method of data storage equipment.
Background
For equipment needing to store data in a confidential mode, the memory chip needs to be burnt out actively in an emergency. Aiming at most self-destruction design schemes at present, the self-destruction functions mainly have two types, one type is software self-destruction, and the other type is hardware physical self-destruction. The self-destruction of the software is generally realized by clearing the data of the memory chip through the software when necessary so as to achieve the effect of confidentiality; the method of hardware physical self-destruction generally achieves the security function by physically destroying the storage device, and the design of the self-destruction mostly adopts passive self-destruction.
Software self-destruction generally needs to manually start a self-destruction program and clear data of a memory chip according to steps; the self-destruction of hardware needs mechanical destruction of the memory chip, and belongs to passive self-destruction. Both of these self-destruction technologies are inconvenient to operate in some emergency situations.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a self-destruction device of data storage equipment and a method thereof.
The solution of the invention for solving the technical problem is as follows: a self-destruct apparatus for a data storage device, comprising: the voltage boosting circuit comprises a boosting chip, an inductor, a field effect tube, a fly-wheel diode, a first resistor and a second resistor, wherein a drain electrode of the field effect tube is connected with the basic voltage end, a grid electrode of the field effect tube is connected with a second GPIO port of the single chip microcomputer, a source electrode of the field effect tube is connected with one end of the inductor and a power supply end of the boosting chip respectively, the other end of the inductor is connected with an anode of the fly-wheel diode and a switching end of the boosting chip respectively, a cathode of the fly-wheel diode is connected with one end of the first resistor and an anode of the anti-reverse diode respectively, the other end of the first resistor is connected with a feedback end of the boosting chip and one end of the second resistor respectively, the other end of the second resistor is connected with the grounding end of the anti-reverse diode, and the cathode of the anti-reverse diode is connected with a storage chip externally, and the boosting chip is used for boosting the basic voltage to the power supply end.
Further, the destruction voltage is more than or equal to 4 times of the basic voltage.
Further, the type of singlechip is: STM32F030F4P6, the model of boost chip is: TPS61040DBVRG4.
A self-destruction method of a data storage device comprises the following steps:
judging whether the self-destruction device is in a self-destruction activation mode or not;
if the self-destruction device is in a self-destruction activation mode, judging whether a self-destruction signal is received or not;
and if the self-destruction signal is received, exciting the booster circuit, and burning the memory chip of the data storage equipment by using voltage.
Further, the self-destruction signal is a level signal with the duration of 3-5 seconds.
The invention has the beneficial effects that: the invention utilizes the singlechip to obtain the self-destruction signal, utilizes the booster circuit to generate the destruction voltage, and burns the memory chip by the destruction voltage, thereby realizing the purpose of conveniently destroying the memory device and achieving the effect of data confidentiality.
Drawings
In order to more clearly illustrate the technical solution in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below. It is clear that the described figures are only some embodiments of the invention, not all embodiments, and that a person skilled in the art can also derive other designs and figures from them without inventive effort.
FIG. 1 is a schematic structural diagram of a self-destruction apparatus according to embodiment 1;
fig. 2 is a flow chart of the steps of the self-destruction method of embodiment 1.
Detailed Description
The conception, the specific structure and the technical effects produced by the present invention will be clearly and completely described in conjunction with the embodiments and the attached drawings, so as to fully understand the objects, the features and the effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and other embodiments obtained by those skilled in the art without inventive efforts are within the protection scope of the present invention based on the embodiments of the present invention. In addition, all the coupling/connection relationships mentioned herein do not mean that the components are directly connected, but mean that a better coupling structure can be formed by adding or reducing coupling accessories according to specific implementation conditions. All technical characteristics in the invention can be interactively combined on the premise of not conflicting with each other.
Embodiment 1, referring to fig. 2, a method for self-destruction of a data storage device includes the steps of:
step S1, judging whether a self-destruction device is in a self-destruction activation mode or not;
s2, if the self-destruction device is in a self-destruction activation mode, judging whether a self-destruction signal is received or not;
and S3, if the self-destruction signal is received, exciting a booster circuit, and burning a storage chip of the data storage device by using voltage.
Wherein, the self-destruction signal is a level signal with the duration of 3-5 seconds.
In order to better describe the method, the embodiment further describes a self-destruction apparatus of a data storage device.
Referring to fig. 1, a self-destruction apparatus of a data storage device includes: the voltage boosting circuit comprises a voltage boosting chip U2, an inductor L1, a field effect transistor Q1, a freewheeling diode D1, an anti-reverse diode D2, a first resistor R1 and a second resistor R2, wherein the drain electrode of the field effect transistor Q1 is connected with the base voltage end VBAT, the grid electrode of the field effect transistor Q1 is connected with a second GPIO port PA0 of the single chip U1, the source electrode of the field effect transistor Q1 is respectively connected with one end of an inductor L1 and a power supply end VIN of a boosting chip U2, the other end of the inductor L1 is respectively connected with an anode of a fly-wheel diode D1 and a switch end LX of the boosting chip, a cathode of the fly-wheel diode D1 is respectively connected with one end of a first resistor R1 and an anode of an anti-reverse diode D2, the other end of the first resistor R1 is respectively connected with one end of a second resistor R2 and a feedback end FB of the boosting chip U2, the other end of the second resistor R2 is connected with a ground terminal, and a cathode of the anti-reverse diode D2 is externally connected with a power supply end Vt of a storage chip.
In general, the self-destruction device is in a self-destruction activation mode by default, that is, the self-destruction device is in a working state, and in this mode, the self-destruction device can respond to the self-destruction signal. The user can press the switch K1, when the pressing time is 3-5 seconds, in this embodiment 5 seconds, and the first GPIO port PA2 of the single chip microcomputer U1 receives a low level signal for 5 seconds, and then the low level signal is considered to be a legal self-destruction signal. After receiving the self-destruction signal, the single chip microcomputer U1 controls the second GPIO port PA0 to further control the field effect transistor Q1 to be conducted, after the field effect transistor Q1 is conducted, the base voltage end VBAT supplies power to the boost chip U2 to excite the boost circuit, so that the boost chip U2 works, and the voltage of the base voltage end VBAT is boosted to a destruction voltage, wherein the voltage of the base voltage end VBAT is called as the base voltage, the destruction voltage is generally larger than or equal to 4 times of the base voltage, and the destruction voltage acts on the power supply end of the storage chip and is used for burning the storage chip.
As an optimization, the type of the single chip microcomputer U1 is as follows: STM32F030F4P6, the model of boost chip U2 is: TPS61040DBVRG4.
In this embodiment, the parameter value of the pull-up resistor R3 is 10k Ω, the parameter value of the first resistor R1 is 620 k Ω, the parameter value of the second resistor R2 is 56 k Ω, the parameter value of the inductor L1 is 10uH, the base voltage is 3.3V, and the destruction voltage is 15V.
The invention utilizes the singlechip U1 to obtain the self-destruction signal, utilizes the booster circuit to generate the destruction voltage, burns the memory chip by the destruction voltage, realizes the purpose of conveniently destroying the memory equipment and achieves the effect of data confidentiality.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that the present invention is not limited to the details of the embodiments shown and described, but is capable of numerous modifications and substitutions without departing from the spirit of the present invention and within the scope of the appended claims.

Claims (3)

1. A self-destruct apparatus for a data storage device, comprising: the voltage boosting circuit comprises a boosting chip, an inductor, a field effect tube, a fly-wheel diode, a first resistor and a second resistor, wherein a drain electrode of the field effect tube is connected with the basic voltage end, a grid electrode of the field effect tube is connected with a second GPIO port of the single chip microcomputer, a source electrode of the field effect tube is connected with one end of the inductor and a power supply end of the boosting chip, the other end of the inductor is connected with an anode of the fly-wheel diode and a switch end of the boosting chip, a cathode of the fly-wheel diode is connected with one end of the first resistor and an anode of the anti-reverse diode, the other end of the first resistor is connected with a feedback end of the boosting chip and one end of the second resistor, the other end of the second resistor is connected with the ground end, a cathode of the anti-reverse diode is connected with a cathode of the boost storage chip, and the boosting chip is used for boosting the basic voltage to the ground end.
2. The self-destruction device of a data storage device of claim 1, wherein the destruction voltage is greater than or equal to 4 times the base voltage.
3. The self-destruction device of the data storage equipment as claimed in claim 2, wherein the type of the single chip microcomputer is: STM32F030F4P6, the model of boost chip is: TPS61040DBVRG4.
CN201811242187.0A 2018-10-24 2018-10-24 Self-destruction device and method of data storage equipment Active CN109543469B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839014A (en) * 2014-03-19 2014-06-04 深圳市亿道信息技术有限公司 Self-destruction circuit of tablet personal computer storage device
CN104331675A (en) * 2014-10-27 2015-02-04 北京同方时讯电子股份有限公司 Self-destruction device of electronic equipment
CN204719761U (en) * 2015-06-04 2015-10-21 鸿秦(北京)科技有限公司 A kind of intelligence destroys solid state hard disc
CN107818257A (en) * 2017-11-23 2018-03-20 迈普通信技术股份有限公司 One kind illegally tears machine data self-desttruction equipment and electronic equipment open

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839014A (en) * 2014-03-19 2014-06-04 深圳市亿道信息技术有限公司 Self-destruction circuit of tablet personal computer storage device
CN104331675A (en) * 2014-10-27 2015-02-04 北京同方时讯电子股份有限公司 Self-destruction device of electronic equipment
CN204719761U (en) * 2015-06-04 2015-10-21 鸿秦(北京)科技有限公司 A kind of intelligence destroys solid state hard disc
CN107818257A (en) * 2017-11-23 2018-03-20 迈普通信技术股份有限公司 One kind illegally tears machine data self-desttruction equipment and electronic equipment open

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
关键领域嵌入式容错机自毁功能;李等;《清华大学学报(自然科学版)》;20111015;第第1430-1433页卷;第1430-1433页 *

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