CN104503532A - Reference voltage production circuit of charge pump - Google Patents
Reference voltage production circuit of charge pump Download PDFInfo
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- CN104503532A CN104503532A CN201410769323.7A CN201410769323A CN104503532A CN 104503532 A CN104503532 A CN 104503532A CN 201410769323 A CN201410769323 A CN 201410769323A CN 104503532 A CN104503532 A CN 104503532A
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- pump
- electric capacity
- reference voltage
- comparer
- voltage
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Abstract
The invention relates to a reference voltage production circuit of a charge pump, and belongs to the technical field of integrated circuits. The reference voltage production circuit of the charge pump adopts the technical scheme that the reference voltage production circuit comprises a capacitive pump, wherein the capacitive pump is connected with a wafer oscillation clock and a comparator, the wafer oscillation clock is used for inputting a wafer oscillation clock signal into the capacitive pump, the comparator is used for inputting a pump enabling signal into the capacitive pump, and is also connected with the input end of the capacitive pump, and the comparator is used for collecting high-voltage VPP(voltage peak-peak) outputted by the capacitive pump; when the high-voltage VPP is lower than preset voltage in the comparator, the comparator is used for inputting the pump enabling signal into the capacitive pump, and the capacitive pump is used for continuously outputting the required high-voltage VPP under the actions of the wafer oscillation clock signal and the pump enabling signal. The reference voltage production circuit has the advantages that the structure is compact, the use requirement of the high-voltage VPP in an integrated circuit is met, the use cost is reduced, the application range is wide, and the safety and reliability are realized.
Description
Technical field
The present invention relates to a kind of circuit structure, especially a kind of generation circuit of charge pump reference voltage, belongs to the technical field of integrated circuit.
Background technology
Usually in the disposable programmable or multiple programmable of non-volatility memory, carrying out needing high pressure when programming or wipe.As shown in Figure 1, be the application state figure of existing One Time Programmable.Disposable programmable module (OTP), when program or data, can realize the data interaction between MCU.Disposable programmable module, when programming, needs high voltage VPP to support.In prior art, the method that disposable programmable module obtains high voltage VPP has two kinds: one directly introduces from the outside, and another kind produces high voltage VPP by charge pump.When employing is directly introduced from the outside, need to consider the electrostatic discharge (ESD) problem with disposable programmable model calling pin, particularly now the antijamming capability of disposable programmable module is poor, is difficult to adapt to the high precision programming to disposable programmable or erasing needs.When adopting charge pump to provide high voltage VPP, the precision of disposable programmable module programming can be guaranteed, but the complex structure of existing charge pump, cost is high, is difficult to satisfied large-scale request for utilization.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of generation circuit of charge pump reference voltage, its compact conformation, meet the request for utilization of integrated circuit high voltage appearance vpp voltage, reduce use cost, wide accommodation, safe and reliable.
According to technical scheme provided by the invention, the generation circuit of described charge pump reference voltage, comprise electric capacity pump, described electric capacity pump is with the crystal oscillator clock for inputting crystal oscillator clock signal to described electric capacity pump and for being connected to the comparer of described electric capacity pump front pump enable signal, and described comparer is also connected with the input end of described electric capacity pump;
Comparer gathers the high voltage VPP that electric capacity pump exports, when described high voltage VPP is lower than predeterminated voltage in comparer, comparer can to electric capacity pump front pump enable signal, and electric capacity pump continues the high voltage VPP needed for output under crystal oscillator clock signal and the effect of pump enable signal.
Described comparer is connected with reference voltage generator, and described reference voltage generator comprises bandgap voltage reference.
Described reference voltage generator comprises resistance R1 and resistance R2, and one end of described resistance R1 is connected with voltage VDD, and the other end of resistance R1 is connected with one end of the input end of comparer and resistance R2, the other end ground connection of resistance R2.
Described voltage VDD directly obtains from the connection of the voltage pin of circuit domain.
Advantage of the present invention: by comparer, feedback is carried out to the high voltage VPP that electric capacity pump produces and detect, the high voltage VPP that electric capacity pump is exported higher than predeterminated voltage, can not guarantee the request for utilization meeting integrated circuit high voltage appearance vpp voltage, reduces use cost, wide accommodation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is the application state figure of existing disposable programmable module.
Fig. 2 is structured flowchart of the present invention.
Fig. 3 is the circuit theory diagrams of reference voltage generator of the present invention.
Description of reference numerals: 1-electric capacity pump, 2-crystal oscillator clock, 3-comparer and 4-reference voltage generator.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 2: in order to the request for utilization of integrated circuit high voltage appearance vpp voltage can be met, reduce use cost, wide accommodation, the present invention includes electric capacity pump 1, described electric capacity pump 1 is with the crystal oscillator clock 2 for inputting crystal oscillator clock signal to described electric capacity pump 1 and for being connected to the comparer 3 of described electric capacity pump 1 front pump enable signal, and described comparer 3 is also connected with the input end of described electric capacity pump 1;
Comparer 3 gathers the high voltage VPP that electric capacity pump 1 exports, when described high voltage VPP is lower than predeterminated voltage in comparer 3, comparer 3 can to electric capacity pump 1 front pump enable signal, and electric capacity pump 1 continues the high voltage VPP needed for output under crystal oscillator clock signal and the effect of pump enable signal.
Particularly, electric capacity pump 1 is that a kind of electronic switch and capacitor of utilizing is by the circuit of direct current boosted voltage or reversed polarity, crystal oscillator clock 2 can provide electric capacity pump 1 to work required crystal oscillator clock signal, a backfeed loop is formed between comparer 3 and electric capacity pump 1, the high voltage VPP exported by comparer 3 pairs of electric capacity pumps 1 is carried out feedback and detects, when the high voltage VPP of described detection is greater than the predeterminated voltage in comparer 3, namely comparer 3 can transmit enable stop signal to electric capacity pump 1; And when the high voltage VPP detected is lower than predeterminated voltage in comparer 3, comparer 3 namely can to electric capacity pump 1 transmission pump enable signal.Electric capacity pump 1 only in effective situation, just can continue output HIGH voltage VPP crystal oscillator clock signal and pump enable signal while, with the voltage providing nonvolatile memory required in programming or erase operation.
Usually, pump enable signal can be high level signal, and pump stop signal can be low level signal, and the predeterminated voltage in comparer 3 can be fixedly installed as required in advance.Electric capacity pump 1, comparer 3 can adopt existing circuit structure, as long as can make electric capacity pump 1 energy boosted voltage, the high voltage VPP that comparer 3 can export electric capacity pump 1 carry out feedback and detect, and specifically repeats no more.
As shown in Figure 3, described comparer 3 is connected with reference voltage generator 4, and described reference voltage generator 4 comprises bandgap voltage reference.
In the embodiment of the present invention, the predeterminated voltage in comparer 3 also can produce by reference to voltage generator 4 and obtain, and reference voltage generator adopts bandgap voltage reference, has area large, easily designs the advantages such as realization.
Particularly, described reference voltage generator 4 comprises resistance R1 and resistance R2, and one end of described resistance R1 is connected with voltage VDD, and the other end of resistance R1 is connected with one end of the input end of comparer 3 and resistance R2, the other end ground connection of resistance R2.
When programming, because the electric current needed is larger, the voltage VDD of chip internal also can be affected, and can wave up and down.In order to reduce the impact of voltage VDD that interference exports reference voltage generator 4, such that reference voltage is relatively more steady and deviation is little.Voltage VDD in reference voltage pressure generator 4 directly can move PAD(power pin to from the domain of circuit) obtain.Like this, the reference voltage of generation can be relatively steady and deviation is little.Corresponding high voltage VPP also can stablize with deviation little, reaches the requirement of chip, makes the performance of chip better.
The present invention carries out feedback by the high voltage VPP that comparer 3 pairs of electric capacity pumps 1 produce and detects, the high voltage VPP that electric capacity pump 1 is exported higher than predeterminated voltage, can not guarantee the request for utilization meeting integrated circuit high voltage appearance vpp voltage, reduces use cost, wide accommodation, safe and reliable.
Claims (4)
1. the generation circuit of a charge pump reference voltage, it is characterized in that: comprise electric capacity pump (1), described electric capacity pump (1) is with the crystal oscillator clock (2) for inputting crystal oscillator clock signal to described electric capacity pump (1) and for being connected to the comparer (3) of described electric capacity pump (1) front pump enable signal, and described comparer (3) is also connected with the input end of described electric capacity pump (1);
Comparer (3) gathers the high voltage VPP that electric capacity pump (1) exports, when described high voltage VPP is lower than predeterminated voltage in comparer (3), comparer (3) can to electric capacity pump (1) front pump enable signal, and electric capacity pump (1) continues the high voltage VPP needed for output under crystal oscillator clock signal and the effect of pump enable signal.
2. the generation circuit of charge pump reference voltage according to claim 1, is characterized in that: described comparer (3) is connected with reference voltage generator (4), and described reference voltage generator (4) comprises bandgap voltage reference.
3. the generation circuit of charge pump reference voltage according to claim 2, it is characterized in that: described reference voltage generator (4) comprises resistance R1 and resistance R2, one end of described resistance R1 is connected with voltage VDD, the other end of resistance R1 is connected with the input end of comparer (3) and one end of resistance R2, the other end ground connection of resistance R2.
4. the generation circuit of charge pump reference voltage according to claim 3, is characterized in that: described voltage VDD directly obtains from the connection of the voltage pin of circuit domain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410769323.7A CN104503532A (en) | 2014-12-13 | 2014-12-13 | Reference voltage production circuit of charge pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410769323.7A CN104503532A (en) | 2014-12-13 | 2014-12-13 | Reference voltage production circuit of charge pump |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104503532A true CN104503532A (en) | 2015-04-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410769323.7A Pending CN104503532A (en) | 2014-12-13 | 2014-12-13 | Reference voltage production circuit of charge pump |
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| CN (1) | CN104503532A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108334148A (en) * | 2017-12-25 | 2018-07-27 | 南京中感微电子有限公司 | Improved voltage comparator |
| CN108446126A (en) * | 2018-05-14 | 2018-08-24 | 珠海市微半导体有限公司 | A kind of programming device and programming method of EFUSE |
| CN108491018A (en) * | 2018-04-04 | 2018-09-04 | 上海申矽凌微电子科技有限公司 | A kind of on piece boost voltage source circuit |
| US10177746B1 (en) | 2018-07-20 | 2019-01-08 | Winbond Electronics Corp. | Overdrive Voltage Generator |
-
2014
- 2014-12-13 CN CN201410769323.7A patent/CN104503532A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108334148A (en) * | 2017-12-25 | 2018-07-27 | 南京中感微电子有限公司 | Improved voltage comparator |
| CN108491018A (en) * | 2018-04-04 | 2018-09-04 | 上海申矽凌微电子科技有限公司 | A kind of on piece boost voltage source circuit |
| CN108491018B (en) * | 2018-04-04 | 2019-10-29 | 上海申矽凌微电子科技有限公司 | A kind of on piece boost voltage source circuit |
| CN108446126A (en) * | 2018-05-14 | 2018-08-24 | 珠海市微半导体有限公司 | A kind of programming device and programming method of EFUSE |
| CN108446126B (en) * | 2018-05-14 | 2023-05-05 | 珠海一微半导体股份有限公司 | EFUSE programming device and EFUSE programming method |
| US10177746B1 (en) | 2018-07-20 | 2019-01-08 | Winbond Electronics Corp. | Overdrive Voltage Generator |
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Application publication date: 20150408 |