CN106991341A - Possesses the flash memory device that entity destroys function - Google Patents
Possesses the flash memory device that entity destroys function Download PDFInfo
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- CN106991341A CN106991341A CN201610809756.XA CN201610809756A CN106991341A CN 106991341 A CN106991341 A CN 106991341A CN 201610809756 A CN201610809756 A CN 201610809756A CN 106991341 A CN106991341 A CN 106991341A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
- G06F21/79—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/60—Protecting data
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- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computer Security & Cryptography (AREA)
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- General Engineering & Computer Science (AREA)
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- Health & Medical Sciences (AREA)
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- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The present invention provides a kind of flash memory device for possessing entity destruction function, and it includes a controller, a plurality of flash memories and a voltage control circuit；Voltage control circuit includes a booster, a reducing transformer and a voltage controller；Booster receives a system voltage to produce one first high pressure；Reducing transformer receives the first high pressure to provide an output voltage to controller and flash memory；Output voltage produced by voltage controller sensing reducing transformer, and signal is awarded in generation once, when voltage controller receives the control signal that an entity is destroyed from a main frame, voltage controller controls reducing transformer to produce the output voltage of a high levle using feedback signal, and the semiconductor body component of controller and flash memory is burnt with the output voltage using high levle.
Description
Technical field
The present invention is related to a kind of flash memory device, espespecially a kind of to possess the flash memory device that entity destroys function.
Background technology
Flash memory device (SSD, SD card, CF cards, Portable disk) is often used in the data storage purposes of a confidentiality, for example：
The storage applications of finance data, military-specific data.When occurring the situation of special emergency or exception, a main frame can be passed through
Input one is higher than the external high pressure of the operating voltage of flash memory device (for example：24V) to flash memory device, to be held for flash memory device
The program that the entity of row one is destroyed.Then, inside flash memory device controller and the entity component of flash memory will be by the external high pressure institute
Destroy, cause to avoid the doubt that the confidentiality data stored by flash memory device are stolen by others.
The program of entity destruction is performed using external high pressure, must customized design one on the mainboard of main frame
The circuit of external high pressure can be produced.This customized mainboard will increase many hard for the user of data confidentiality demand
Part builds cost.
In view of this, the entity for proposing an innovation is destroyed mechanism, the electricity that flash memory device is built by inside by the present invention
Voltage-controlled circuit processed provides a high pressure, and the high pressure provided by voltage control circuit performs the program that an entity is destroyed, then,
The action that flash memory device can be destroyed for the semiconductor body component of internal controller and flash memory.
The content of the invention
The purpose of the present invention, be to propose it is a kind of possess the flash memory device that entity destroys function, an electricity is built inside it
Voltage-controlled circuit processed, this voltage control circuit can provide the low-voltage and one of a normal operation to burn semiconductor body group
The high voltage of part, when flash memory device, which performs an entity, destroys program, voltage control circuit output HIGH voltage to controller and sudden strain of a muscle
Deposit, then, the semiconductor body component of controller and flash memory is that can be burnt by this high voltage.
To reach above-mentioned purpose, the present invention uses following technical scheme；
A kind of flash memory device for possessing entity destruction function, including：One controller；A plurality of flash memories；And one voltage control
Circuit, including：One booster, receives a system voltage to produce one first high pressure；One reducing transformer, connection booster, controller
And flash memory, the first high pressure is received, producing an output voltage, there is provided output voltage to controller and flash memory；And a voltage controller,
Reducing transformer is connected, signal is awarded in the output voltage produced by sensing reducing transformer, generation once, when voltage controller reception one is normal
During the control signal of running, voltage controller controls the output voltage of reducing transformer one low level of generation using feedback signal；Or,
When voltage controller receives the control signal that an entity is destroyed, voltage controller produces one using feedback signal control reducing transformer
The output voltage of the output voltage of high levle, wherein low level is a low-voltage for providing flash memory device normal operation, and Gao Zhun
The output voltage of position is the high voltage of a semiconductor body component to destroy controller and/or flash memory.
In one embodiment of the invention, voltage controller includes a bleeder circuit and a derailing switch, bleeder circuit connection decompression
Device and derailing switch and the output voltage for sensing reducing transformer, when derailing switch receives the control signal of normal operation, derailing switch operation
In the feedback signal produced by a cut-off state, bleeder circuit reducing transformer will be controlled to produce the output voltage of low level, when opening
When closing the control signal that device receiving entity is destroyed, derailing switch is operated in the feedback signal produced by a conducting state, bleeder circuit
Reducing transformer will be controlled to produce the output voltage of high levle.
In one embodiment of the invention, bleeder circuit includes a first resistor, a second resistance and a 3rd resistor, first
One end of one end of resistance, one end of second resistance and 3rd resistor is connected to a first node, the other end of first resistor altogether
An output end of reducing transformer is connected to, the other end ground connection of second resistance, the other end of 3rd resistor is grounded via derailing switch,
A reference voltage is set with first node, the control signal control destroyed by the control signal or entity of normal operation is opened
Close the cut-off of device or turn on to reflect corresponding feedback signal on first node.
In one embodiment of the invention, flash memory device is connected to a main frame, and main frame is via an input and output
Port with export normal operation control signal or entity destroy control signal to flash memory device voltage control circuit.
In one embodiment of the invention, input and output port is a universal input and output port.
In one embodiment of the invention, flash memory device is connected to a main frame, and main frame includes a switch list
Member, when switch element switches in a closed mode, main frame will send the control signal of normal operation to flash memory device,
When switch element switches in an opening, main frame will send the control signal of entity destruction to the electricity of flash memory device
Voltage-controlled circuit processed.
In one embodiment of the invention, wherein flash memory device is connected to a main frame, and controller includes an input and output
Port, main frame issues an entity via a coffret and destroys order to controller, when controller receiving entity is destroyed
During order, control signal that controller instantiation is destroyed and control signal that entity destroys is transmitted to electricity via input/output port
Pressure controller.
A latch circuit is provided with one embodiment of the invention, between controller and voltage controller, latch circuit is to protect
Hold the control signal of entity destruction.
In one embodiment of the invention, latch circuit is a flip-flop.
The present invention provides a kind of flash memory device for possessing entity destruction function again, and it includes：One controller；It is a plurality of to dodge
Deposit；And a voltage control circuit, including：One booster, receives a system voltage to produce one first high pressure；One reducing transformer, even
Booster, controller and flash memory are connect, the first high pressure is received, producing an output voltage, there is provided output voltage to controller and flash memory；
And a voltage controller, reducing transformer is connected, the output voltage produced by sensing reducing transformer, generation awards signal, works as voltage once
When controller receives the control signal that an entity is destroyed, voltage controller produces a high levle using feedback signal control reducing transformer
Output voltage, the output voltage of high levle for a semiconductor body component to destroy controller and/or flash memory height electricity
Pressure.
It is an advantage of the invention that：
The present invention's possesses the flash memory device that entity destroys function, and normal operation is provided by built-in voltage control circuit
Low-voltage and high voltage to burn semiconductor body component, when flash memory device, which performs entity, destroys program, voltage
Circuit is controlled by output HIGH voltage to controller and flash memory, the semiconductor body component of controller and flash memory is can be by this high electricity
Pressure is burnt.
Brief description of the drawings
Fig. 1 is the structural representation of an embodiment of the flash memory device of the present invention.
Fig. 2 is the structural representation of the another embodiment of the flash memory device of the present invention.
Fig. 3 is the detailed construction schematic diagram of the voltage controller of the present invention.
Embodiment
Referring to Fig. 1, the structural representation of the embodiment for the flash memory device of the present invention.As illustrated, flash memory device
30 are electrically connected with a main frame 10, and it carries out the transmission of data via a coffret 101 with main frame 10.Transmission
Interface 101 is a data transmission interface for according with USB, PCIe, SATA3 or other standards specification.In the present invention, computer
Main frame 10 can perform the destruction program of a normal operation program or semiconductor entity component for flash memory device 30.
Wherein, flash memory device 30 includes a controller 31, the voltage control circuit 35 of a plurality of flash memories 33 and one.Voltage is controlled
Circuit 35 includes a booster 36, a reducing transformer 37 and a voltage controller 38, and reducing transformer 37 connects controller 31, flash memory respectively
33rd, booster 36 and voltage controller 38.Main frame 10 can provide a system voltage Vs(for example：3V or 5V) to flash memory
Device 30.The reception system voltage V of booster 36sAfterwards, for system voltage VsBoosted and produced one first high pressure V1(example
Such as：12V).Reducing transformer 37 receives the first high pressure V1, to have an output voltage V in its output endOUT.In the present invention, drop
Depressor 37 is an adjustable reducing transformer, and voltage controller 38 can sense the output voltage V of reducing transformer 37OUTAnd have one
Feedback signal FB, utilize feedback signal FBRegulate and control the output voltage V of reducing transformer 37OUT.In an embodiment of the present invention, feedback signal
FBAlso can be a current signal.
In one embodiment of the invention, main frame 10 includes an input and output port 103, for example：Universal input and output
Port (General Purpose Input/Output, GPIO).The input/output port 103 is connected to the voltage of flash memory device 30
Controller 38.Main frame 10 transmits the control signal C of a normal operation via input and output port 1031Or one entity destroy
Control signal C2To voltage control circuit 38.The control signal C of normal operation1For a low level (Low) logic signal, and
The control signal C that entity is destroyed2For a high levle (Hi) logic signal.When voltage controller 38 receives the control of normal operation
Signal C1When, utilize feedback signal FBReducing transformer 37 is controlled to produce the output voltage V of a low levelOUT, for example：1.8V or 3.3V,
The output voltage V of this low levelOUTFor a low-voltage for providing the normal operation of flash memory device 30.Or, when voltage controller 38 connects
Receive the control signal C that entity is destroyed2When, utilize feedback signal FBReducing transformer 37 is controlled to produce the output voltage V of a high levleOUT,
For example：11V or other numerical value high voltage, the output voltage V of this high levleOUTFor one can to destroy controller 31 and/or
The high voltage of the entity component of flash memory 33.In the present embodiment, control signal C1、C2Also it can be connect via an APP programs, an operation
Mouthful or one have Remote Control Interface external electronic operation and produce.
Furthermore, in another embodiment of the present invention, main frame 10 still includes a switch element 105.The switch list
Member 105 is connected to the voltage controller 38 of flash memory device 30.When switch element 105 switches in a closed mode, owner is calculated
Machine 10 produces the control signal C of normal operation1And the control signal C of transmission normal operation1To voltage controller 38；Or, when opening
When pass unit 105 switches in an opening, the control signal C that the instantiation of main frame 10 is destroyed2And transmission entity is destroyed
Control signal C2To voltage controller 38.
Or, as shown in Fig. 2 in further embodiment of this invention, it is defeated that the controller 31 of flash memory device 30 includes an input
Go out of the port 311, for example：GPIO.This input/output port 311 is connected to voltage controller 38.When main frame 10 is intended to for dodging
When cryopreservation device 30 performs a normal operation program, a normal operating order 102 is transmitted to controller 31 using coffret 101.
When controller 31 receives normal operating order 102, the control signal C of normal operation will be produced1, and via input and output port 311
Transmit the control signal C of normal operation1To voltage controller 38, voltage controller 38 is by the control signal C according to normal operation1
Instruction with utilize feedback signal FBReducing transformer 37 is controlled to produce the output voltage V of a low levelOUT.Or, work as main frame
10 be intended to for flash memory device 30 perform an entity destroy program when, using coffret 101 transmit an entity destroy order 104 to
Controller 31.When the receiving entity of controller 31 destroys order 104, the control signal C of destruction will be instantiated2, and it is defeated via inputting
The control signal C that the transmission entity of exit port 311 is destroyed2To voltage controller 38, voltage controller 38 will be destroyed according to entity
Control signal C2Instruction with utilize feedback signal FBReducing transformer 37 is controlled to produce the output voltage V of a high levleOUT。
With continued reference to Fig. 2, when main frame 10 assigns entity for flash memory device 30 destroys order 104, controller
31 also may be destroyed at once and disable, it is impossible to persistently provide entity destroy control signal C2To voltage controller 38, cause
Output voltage VOUTA high pressure conditions can not be remained at, and then cause the entity component of the flash memory 33 of part also may be not yet
It is destroyed.Then, the flash memory device 30 of the present embodiment is further provided with a door bolt between controller 31 and voltage controller 38
Lock circuit 32.Latch circuit 32 is to keep the signal that input and output port 311 is sent out, for example：Control signal C1、C2.Then,
When controller 38 has been destroyed, latch circuit 32 can still continue the control signal C that output entity is destroyed2To voltage controller
38, to make the entity component of all flash memories 33 all can be by the output voltage V of this high levleOUTDestroyed.Furthermore, the present invention one
In embodiment, latch circuit 32 can be a flip-flop, for example：D-type flip-flop, SR flip-flops, JK flip-flops.
Referring to Fig. 3, being the detailed construction schematic diagram of voltage controller of the present invention.As illustrated, voltage controller 38 is wrapped
Include a bleeder circuit 380 and a derailing switch 387.Bleeder circuit 380 is made up of a plurality of resistance, its be connected to reducing transformer 37 and
Derailing switch 387 and the output voltage V for sensing reducing transformer 37OUT.Divider resistance value in bleeder circuit 38 will be according to derailing switch
387 on or off is changed, and therefore produces feedback signal FB。
When derailing switch 387 receives the control signal C of normal operation1When, derailing switch 387 is operated in a cut-off state, partial pressure
Feedback signal F produced by circuit 380BReducing transformer 37 will be controlled to produce the output voltage V of low levelOUT.When derailing switch 387
The control signal C that receiving entity is destroyed2When, derailing switch 387 is operated in the feedback produced by a conducting state, bleeder circuit 380
Signal FBReducing transformer 37 will be controlled to produce the output voltage V of high levleOUT。
Further, bleeder circuit 380 includes the second resistance (R2) 383 and one the 3rd of a first resistor (R1) 381, one
Resistance (R3) 385.First resistor 381, second resistance 383 and 3rd resistor 385 are respectively a fixed resistance or a variable resistor.
One end of one end of first resistor 381, one end of second resistance 383 and 3rd resistor 385 is connected to a first node 382 altogether,
The other end of first resistor 381 is connected to an output end of reducing transformer 37, the other end ground connection of second resistance 383,3rd resistor
385 other end is grounded via derailing switch 387.A reference voltage Vref is set with first node 382, this reference voltage
Vref is certain value, for example：0.6V.By controlling signal C1Or C2The on or off of controlling switch device 387, with first segment
Corresponding feedback signal F is reflected on point 382B。
The present embodiment bleeder circuit 380, which is formulated, one first formula (1) and one second formula (2).When derailing switch 387 ends
When, flash memory device 30 is operated in normal operation program, the output voltage V of reducing transformer 37OUTIt will be determined by the first formula (1).
When derailing switch 387 is turned on, flash memory device 30 operates the destruction program in semiconductor body component, reducing transformer 37
Output voltage VOUTIt will be determined by the second formula (2).
Furthermore, the structure of above-mentioned bleeder circuit 380 is only one embodiment of the invention.The technology of the present invention practical application
When, the connection in series-parallel between resistance quantity, resistance and resistance in bleeder circuit 380 can be according in the output voltage to be obtained
VOUTNumerical value and carry out correspondence configuration and design.
Summary, the voltage control circuit 35 that flash memory device 30 of the present invention is built by inside is normally transported to provide one
The low-voltage of work and a high voltage to burn semiconductor body component.Program is destroyed when flash memory device 30 performs an entity
When, voltage control circuit 35 is by output HIGH voltage to controller 31 and flash memory 33, then, the semiconductor of controller 31 and flash memory 33 is real
Body component is that can be burnt by this high voltage.
As described above, is only the preferred embodiment of the present invention, not for limiting the scope that the present invention is implemented,
Equivalent changes and modifications carried out by i.e. all shape, construction, feature and spirit according to described in the claims in the present invention, all should be included in
In the claim of the present invention.
Claims (10)
1. possess the flash memory device that entity destroys function, it is characterised in that including：
One controller；
A plurality of flash memories；And
One voltage control circuit, including：
One booster, receives a system voltage to produce one first high pressure；
One reducing transformer, connection booster, controller and flash memory, receives the first high pressure, and producing an output voltage, there is provided output voltage
To controller and flash memory；And
One voltage controller, connects reducing transformer, and the output voltage produced by sensing reducing transformer, generation awards signal, works as electricity once
When pressure controller receives the control signal of a normal operation, voltage controller produces a low standard using feedback signal control reducing transformer
The output voltage of position；Or, when voltage controller receives the control signal that an entity is destroyed, voltage controller is interrogated using feedback
Number control reducing transformer produce a high levle output voltage, wherein the output voltage of low level be one offer flash memory device normally transport
The low-voltage of work, the output voltage of high levle is electric for the height of a semiconductor body component to destroy controller and/or flash memory
Pressure.
2. according to claim 1 possess the flash memory device that entity destroys function, it is characterised in that the voltage controller
Including a bleeder circuit and a derailing switch, the bleeder circuit connects the reducing transformer and the derailing switch and senses the reducing transformer
Output voltage, when the derailing switch receives the control signal of the normal operation, the derailing switch is operated in a cut-off state, this point
The feedback signal produced by volt circuit will control the output voltage of the reducing transformer generation low level, when the switch
When device receives the control signal that the entity is destroyed, the derailing switch is operated in the institute produced by a conducting state, the bleeder circuit
State the output voltage that feedback signal will control the reducing transformer to produce the high levle.
3. according to claim 2 possess the flash memory device that entity destroys function, it is characterised in that the bleeder circuit bag
A first resistor, a second resistance and a 3rd resistor, one end of the first resistor, one end of second resistance and the 3rd electricity are included
One end of resistance is connected to a first node altogether, and the other end of the first resistor is connected to an output end of the reducing transformer, and this
The other end ground connection of two resistance, the other end of the 3rd resistor is grounded via the derailing switch, set on the first node
There is a reference voltage, the control signal destroyed by the control signal or entity of the normal operation controls cutting for the derailing switch
Only or turn on to reflect the corresponding feedback signal on the first node.
4. according to claim 1 possess the flash memory device that entity destroys function, it is characterised in that the flash memory device is connected
To a main frame, the main frame is via an input and output port to export the control signal or entity of the normal operation
Destruction control signal to the flash memory device the voltage control circuit.
5. according to claim 4 possess the flash memory device that entity destroys function, it is characterised in that the input and output port
For a universal input and output port.
6. according to claim 1 possess the flash memory device that entity destroys function, it is characterised in that the flash memory device is connected
To a main frame, the main frame includes a switch element, when the switch element switches in a closed mode, should
Main frame will send the control signal of the normal operation to the flash memory device, when the switch element switches in a unlatching shape
During state, the main frame will send the control signal of the entity destruction to the voltage control circuit of the flash memory device.
7. according to claim 1 possess the flash memory device that entity destroys function, it is characterised in that the flash memory device is connected
To a main frame, the controller includes an input/output port, and the main frame issues one via a coffret
Entity destroys order to the controller, and when the controller, which receives the entity, destroys order, the controller produces described
Control signal that entity is destroyed and control signal that the entity destroys is transmitted to the voltage control via the input/output port
Device processed.
8. according to claim 7 possess the flash memory device that entity destroys function, it is characterised in that the controller and electricity
A latch circuit is provided between pressure controller, the latch circuit is to keep the control signal that the entity is destroyed.
9. flash memory device according to claim 8, it is characterised in that the latch circuit is a flip-flop.
10. possess the flash memory device that entity destroys function, it is characterised in that including：
One controller；
A plurality of flash memories；And
One voltage control circuit, including：
One booster, receives a system voltage to produce one first high pressure；
One reducing transformer, connection booster, controller and flash memory, receives the first high pressure, and producing an output voltage, there is provided output voltage
To controller and flash memory；And
One voltage controller, connects reducing transformer, and the output voltage produced by sensing reducing transformer, generation awards signal, works as electricity once
When pressure controller receives the control signal that an entity is destroyed, voltage controller produces a Gao Zhun using feedback signal control reducing transformer
The output voltage of position, the output voltage of high levle is the height of a semiconductor body component to destroy controller and/or flash memory
Voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610809756.XA CN106991341B (en) | 2016-09-08 | 2016-09-08 | Flash memory device with entity destroying function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610809756.XA CN106991341B (en) | 2016-09-08 | 2016-09-08 | Flash memory device with entity destroying function |
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| Publication Number | Publication Date |
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| CN106991341A true CN106991341A (en) | 2017-07-28 |
| CN106991341B CN106991341B (en) | 2020-04-24 |
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Cited By (1)
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| CN106991341B (en) | 2020-04-24 |
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